|Publication number||US20050039852 A1|
|Application number||US 10/951,084|
|Publication date||Feb 24, 2005|
|Filing date||Sep 27, 2004|
|Priority date||Jul 12, 2002|
|Also published as||US6830650, US7192505, US20040007326, US20050034812|
|Publication number||10951084, 951084, US 2005/0039852 A1, US 2005/039852 A1, US 20050039852 A1, US 20050039852A1, US 2005039852 A1, US 2005039852A1, US-A1-20050039852, US-A1-2005039852, US2005/0039852A1, US2005/039852A1, US20050039852 A1, US20050039852A1, US2005039852 A1, US2005039852A1|
|Inventors||Gregory Roche, Leonard Mahoney, Daniel Carter, Steven Roberts|
|Original Assignee||Advanced Energy Industries, Inc.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (25), Referenced by (13), Classifications (6), Legal Events (3)|
|External Links: USPTO, USPTO Assignment, Espacenet|
This application is a divisional application of, and claims the benefit and priority of, U.S. patent application Ser. No. 10/194,526 filed Jul. 12, 2002.
1. Field of the Invention
This invention relates generally to apparatus and methods in which surface-based sensors measure incident charged-particle currents, charging voltages, temperatures and other physical parameters at a work piece surface during plasma processing, and more particularly to a semiconductor wafer utilizing surface-based sensors to provide real time measurement of plasma characteristics adjacent to the wafer surface as well as select physical properties during plasma processing.
2. Brief Description of the Prior Art
Spatial and temporal variation in plasma characteristics and the work piece surface temperature can strongly influence the performance and yield of plasma-based processes, such as those encountered in semiconductor manufacture. In such processes, variations in physical plasma parameters that occur adjacent to the process work piece directly impact process metrics which may include the following: (1) etch rates and etch profile control, (2) surface charging effects and device or film damage, and (3) thin film deposition rates, density, coverage, morphology, stress and adhesion. Some common plasma parameters that drive surface processes on a work piece, such as a semiconductor substrate wafer, include charged-particle density and flux (ion and electron density), apparent electron temperature, ion energies, neutral gas temperature, density and flux of reactive gas species, and plasma radiative emissions. It is also known that surface temperature of the work piece or wafer can play a very critical role in many of the surface reactions and results of the plasma process.
Because of the criticality of both plasma characteristics and substrate temperature and their impact on process yield, several workers have attempted to monitor plasma characteristics and surface temperatures during processes by means of diagnostic probes that are directly mounted to a work piece, such as a semiconductor wafer substrate. In these devices, diagnostic probes such as thermocouples, DC-biased electrical probes, ion energy analyzers, and surface charging collectors have been used to measure spatial and temporal variation of surface temperature, selected plasma parameters, and plasma-induced charging effects. One such device is the Stanford Plasma On-wafer Real Time (SPORT) probe as described in an article by S. Ma and J. P. McVittie in the proceedings of the 1996 International Symposium on Plasma Process-Induced Damage pg. 20-23. The SPORT probe is capable of measuring electrostatic charging and plasma-induced currents at the wafer surface. The SPORT probe utilizes large conductive pads placed on a thick oxide layer of a silicon wafer. Polysilicon leads make direct current contact to the pads and the silicon substrate. Wire leads connected to the edge of the wafer carry current and voltage signals outside the plasma-processing chamber to a low pass RF filter to a dc measurement circuit. By means of the external measurement circuit, plasma induced charging voltages are measured between the pads and the substrate in order to quantify plasma induced electrostatic charging effects that could result in damage to electrically sensitive semiconductor device structures during plasma processing and fabrication.
Another apparatus is described in U.S. Pat. No. 5,801,386 issued to Valentin N. Todorov et al. This patent discloses an apparatus that comprises a plurality of conductive collector pads for detection of plasma induced ion currents and self-biased voltages. The collector pads are arranged in an array so that plasma-induced properties of ion current and self-bias voltage can be spatially resolved over the wafer surface in real time. Each collector pad is connected to a conductive lead that extends outside the chamber to an external data acquisition system.
Also in U.S. Pat. No. 5,959,309 entitled “Sensor to Monitor Plasma Induced Charging Damage”, Tsui, et al. describe a discrete monitoring circuit that measures the plasma-induced voltage and currents to a sampling pad or antenna that is in communication with a ground or common. In this device, the sampling pad is connected to ground through a blocking diode, a blocking transistor, and a storage capacitor. Once the monitor is exposed to the plasma, the voltage between the charged pad or antenna and the electrical common or ground is recorded by charging a storage capacitor. The workers also disclosed how a plurality of these monitors, each with different loading resistances, can be integrated onto a single chip to measure the magnitude of the charging voltage and the plasma-induced current between the antenna and common or ground of the chip. The charging voltage and pad-to-common currents are determined by electrically measuring the voltages of the storage capacitors after the sensor or chip is removed from the plasma processing environment.
Freed et al. describe the development of sensor methods in “Autonomous On-Wafer Sensors for Process Modeling, Diagnostic and Control” (IEEE Transactions on Semiconductor Manufacturing, Vol. 14, No. 3, pp 225-264). This paper describes the basic design challenges faced in the development of an in situ or in-line wafer sensor including power source concepts, wireless communications methods, and electrical isolation of on-wafer electronics. In their examples, they illustrate two design concepts. In the first design concept is an on-wafer thermistor sensor powered with re-chargeable batteries and voltage regulator. The design also includes an A/D converter and LED optical communication electronics for transferring data off the wafer in a thermally elevated process environment and a plasma etching environment. In another version of the design, the workers illustrate how a van der Pauw sheet resistance device may be adapted with CMOS processing methods for measuring polysilicon etch rates. They demonstrate the viability of this sensor with a wired wafer as applied to a XeF2 (non-plasma) etching reactor. These devices have varying degrees of effectiveness in monitoring the wafer temperature or the characteristics of a plasma body adjacent to the wafer when disposed in a plasma processing environments. However, all the examples of the prior art have several limitations that restrict their use for obtaining real-time plasma and substrate temperature measurement within a plasma processing system. Many of these measuring devices are intrusive in that they require the use of wires into the plasma processing system and others are passive recording devices that cannot make real-time measurements. Also, those devices that do not use external wires are limited in on-time operation and power supply current draw since they rely entirely upon on-board battery power sources that have limited milliamp-per-hour capacity or limited sustainable trickle current capacity when attempting to power a sizable array of sensors, microprocessor(s) and wireless communication subsystems. Moreover, in the context of these in situ measurement apparatuses, none of the prior art teachings discuss in detail how to devise a sensor capable of obtaining plasma measurements, such as charged-particle (ion or electron) fluxes, densities and energies that can be adapted to a wireless sensing apparatus.
It would be desirable if there were provided a surface-based sensor apparatus that could make spatially resolved, real-time measurements of plasma properties adjacent to the surface of the apparatus, as well as other properties such as surface temperature. It would also be desirable if the device were non-invasive to the plasma process and if the time-dynamic data recorded by the device could be either transmitted in real-time through a wireless interface or, alternatively, be recorded for downloading once the sensor apparatus is removed from the plasma process chamber. It would be further desirable if the device had a self-contained power supply means that did not rely entirely upon the limited lifetime or trickle current ratings of a battery or alternative conventionally power source.
There is provided by this invention an apparatus for making real time measurements of incident plasma currents, charging surface voltages, and other plasma related parameters as well as surface temperatures within a plasma processing environment. The apparatus is generally comprised of at least one integrated sensor circuit mounted on a work piece such as a silicon wafer substrate. The sensor is comprised of either a dual floating probe to measure ion currents from the plasma, a topographical dependent charging structure to measure plasma induced surface charging effects, filtered photodiodes to measure optical emissions signals, a thermal sensing device to monitor surface temperature or a combination thereof. The sensor inputs are transmitted to a central microprocessor and transceiver that is provided for processing sensor signals, memory storage, and real-time transmission of data via infrared- or rf-wireless communication to a receiver outside the plasma chamber. To power the apparatus, a battery is contained within the apparatus to provide power to the integrated sensor devices, microprocessor and wireless transceiver. Alternately, the apparatus may include one or more topographically dependent charging structures to electrostatically couple power from the plasma boundary that is then regulated and used to provide all or part of the power to the apparatus electronics. The apparatus is particularly useful in spatial and real-time monitoring of plasma and substrate conditions in plasma-based non-depositing processes such as etching, photo-resist stripping or surface cleaning, but could be applied to some plasma-based deposition processes with the appropriate configuration or adaptation of the integrated sensing devices.
In the preferred embodiment the sensors can be fabricated on a semiconductor wafer such as a 200 mm or 300 mm diameter silicon wafer. However, they may also be fabricated on any process work piece such as a ceramic, plastic, metal or glass work piece surface that can be introduced into the vacuum chamber. These configurations are illustrated in
There are three specific architectures of interest that may be used in within the apparatus of the present invention. These are given as
The choice of any particular architecture is dependent upon the need for collecting real-time spatial information, use of materials and manufacture constraints, and data collection issues related to noise immunity and speed of data collection over a distributed serial or multiplexed electrical system. These basic architectures are described in more detail hereinafter.
There are three sensor devices or means that are of particular interest for measurement of parameters at the work piece surface or from the adjacent plasma body. These sensors are used in examples to illustrate the operation and function of the apparatus. These sensors are:
The common aspect of these particular sensor devices is that they are examples of sensing devices that can be electrically floated and thus they are viable for sensing process properties on a work piece when the work piece is electrically floating or if there is an active RF self-bias applied to the work piece. In such cases there can be no ground connection between the processing system ground and the work piece. These sensing devices may be used alone or in certain combinations depending upon the needs or the application. While these three specific devices are used to describe the apparatus or the present invention, there are other possible sensors that may be used in the context of the apparatus, which are described in the following specification.
As mentioned earlier, the surface sensor devices could be fabricated from a hybrid circuit components or an ASIC to form the replicated sensor modules 78 as shown in
With respect to surface temperature sensing devices, there are three types that may be used. These include 1) thermocouples and thermistors that are encapsulated in integrated circuit package for surface mounting to the wafer and which provide a varying bi-metal voltage or electrical impedance with respect to temperature, 2) IC packaged thermocouple or thermistors which have integrated electronics and which provide a digital output of temperature and 3) thermocouple or thermistor devices that have been patterned and integrated into the surface of the wafer with conventional semiconductor-IC manufacturing methods. Those thermal sensors that are based on IC packages are economically advantageous in architectures where hybrid electronics are used, but because of their local thermal mass, they provide only an estimated measure of the wafer surface temperature. Sensors that are fabricated directly into the wafer surface are preferable because of their exactness, but their use can involve considerable cost in pattering and manufacture when compared to IC surface mount devices.
Detailed knowledge of plasma parameters in proximity to the wafer surface can be extremely helpful in understanding the dynamics of plasma-based processes. Spatial and temporal measurements of plasma parameters such as ion current flux, charged-particle density, electron energies (or apparent electron temperatures) and ion energies are physical parameters of the plasma that directly influence rates and quality of surface modification and material deposition and etching. In the preferred embodiment of this invention, the double-floating Langmuir probe or DFP is used to collect some of these plasma parameters. Described in the early 1950s, the double-floating Langmuir probe allows one to obtain I-V characteristics of a plasma between two conductive probes that are allowed to electrically float apart from an electrical common or ground. A detailed description of the DFP diagnostic technique and theory has been given by Swift, J. D. and Schwar, M. J. R., Electric Probes for Plasma Diagnostics, Chapter 7, pp. 137-155, (Elsevier, N.Y., 1969).
The current characteristics versus bias voltage for a symmetric double-floating probe is approximated by
where I+ sat is the ion saturation current, V0 is the floating potential of the probes when no bias is applied, VDPF is the differentially applied probe voltage, and Te is the apparent electron temperature. Equation 1 may be modified to take into non-ideal situations that include effective probe area expansion with increasing bias potential, asymmetric probe areas, non-uniform plasmas and non-Maxwellian electron energy distributions. The conventional analysis that results in Eq. 1 is for a DC floating DFP case, but there is nowhere in the prior art where workers experimentally or theoretically examined the DFP I-V characteristics when the DFP is placed on an RF-biased work piece. Without analysis or experimentation, one may suspect that an RF-bias 136 would distort the I-V characteristics and potentially confound the probe technique and analysis. Such distortion could be due to RF modulation of the plasma sheath boundary and potential disruption of electron currents 122 and 126 to the probe electrodes 48. As a result the I-V characteristics properties under RF-biased conditions might not resemble 128 or follow Eq. 1 when the wafer 14 is placed on an RF biased electrode, as often done in plasma processing systems.
To see how the DFP sensor responds in the presence of an RF-bias signal, an arrangement shown in
To corroborate the unexpected result and to make certain that the balanced RF blocking filter mechanism has no bearing on the experimental results, an analysis of the dual-floating Langmuir probe theory was made which included the effects of a high-amplitude common-mode RF signal, as induced by the RF self-bias, on top of the floating VDPF signal in the electron currents to the probes. The analysis assumes that ion transport across the plasma sheath above the RF-biased wafer is relatively constant with time as is the case when operating at well above 1 MHz. Provided this assumption, the classic I-V characteristics of the DFP diagnostic method given in Eq. 1 are retained, despite the presence of the high-amplitude common-mode RF signal. Thus both experimental and theoretical analysis show that the DFP diagnostic method can provide good measurements of ion saturation currents and apparent electron temperatures in accordance with the classical DFP diagnostic method. It should be noted that the experimental result and theoretical analysis for the DFP diagnostic as disposed on an RF-biased work piece have not been discussed or taught in the prior art, yet the unique result has great utility in that it provides a viable in situ plasma sensor for the apparatus of the present invention.
In order to practically implement the DFP diagnostic technique on an in situ sensor module, it is necessary to provide a floating probe bias mean that may be completely contained within the electrically floating apparatus. Such a means is illustrated in
The topographically dependent charging (TDC) device is another component that has several possible applications in the apparatus of the present invention.
This charging effect is well known in the industry since such charging effects can influence the quality producing high aspect ratio sub-micron features and can lead to surface charging effects that result in device damage during semiconductor IC manufacture. Such surface charging and potential charge damage effects are dependent upon the plasma conditions and spatial uniformity of the plasma. Thus one use of the TDC in the present invention is a monitor of static charges across various TDC devices with varying aspect ratios for spatial and temporal measure of surface charging effects.
An application of the TDC device is also shown in
While we illustrate a TDC device for providing auxiliary electronic power from the plasma process, other chargeable structures, such as a thin film capacitor stack, which is patterned on the wafer surface, may also serve this purpose. As with the TDC structure, such a device can accumulate a net DC charge and thus provide a differential DC voltage when it is exposed an RF bias in a plasma process. This DC voltage may then be regulated by a DC-DC converter in order to power the device electronics or to recharge the device battery. The principle of such a charging capacitor 192 is illustrated in
A typical load-line characteristic is illustrated in
It should be noted that while a FET is specifically used in this illustration as the means by which to collect the loaded I-V characteristics of the TDC sensing device, there may be other methods by which to electrically load the TDC device and sense the I-V response and, thereby, quantify the state of charged-particles of the plasma adjacent to the sensor.
While any practical method of fabrication may be used to form the probing component of the apparatus of the present invention, there are several pragmatic issues that have bearing on its ultimate use. Some of these issues include the selection of materials, limit in thermal range of operation, profile or height and balance, and chemical robustness and compatibility with the processing vacuum environment, and deign features to limit wear of components after cycled use. The following list emphasizes some of the common design constraints.
While thermal sensors, the DFP device and the TDC device have been mentioned in detail here, it is clearly understood by one skilled in the art that the apparatus may include any number of additional sensors. These may include MEMs devices, optical sensor, bulk resistivity devices that are sensitive to rates of etching, curing or deposition or inducement or magnetic fields. In some processes, MEMs devices might be particularly useful sensors in that they are often fashioned from materials that are compatible with plasma-based process environments. One examples of a useful MEMs device is a CMOS-based resonant beam sensor. Such sensors use a micro-machined cantilevered mechanism whose stimulated resonant frequency is dependent upon thermal and mass properties of the beam when exposed to the heat flux of the plasma, gaseous chemical absorbance, or mass changes due to reactive gas etching or deposition.
Some examples of useful MEMs sensor technology include the following devices. A single-chip resonant beam gas sensor as described by Hagleitiner et. al, “A single-chip CMOS Resonant Beam Gas Sensor” 2001 IEEE International Solid-State Circuits Conference, Feb. 6, 2001. This device which was designed to detect the mass absorption of volatile organic compounds could be used in conjunction with present invention to monitor the mass absorption, accumulation or removal as related to a plasma assisted process. Another example is a Hall magnetic sensor as described by Frounchi et al. “Integrated Hall Sensor Array Microsystem” 2001 IEEE International Solid-State Circuits Conference, Feb. 6, 2001. This integrated micro-sensor is a device for monitoring magnetic field strengths and could be used to monitor magnetic fields that are routinely used to enhance in plasma processing system to either control or enhance the process. Another device is micro-scale retarding field energy analyzer (or ion energy analyzer) as described by Blain, et al. “High-resolution submicron retarding field analyzer for low-temperature plasma analysis” Applied Physics Letters, Vol. 75, pp 3923, 1999. This device shows how a submicron-level ion energy analyzer could be constructed as a sensor on a patterned wafer. Such a device could be effectively operated with an electrical variant of dual floating probe circuitry as described earlier in order to obtain ion energy distributions for this type of analyzer. Yet another class of sensing technology are various integrated thin film optical photo sensor or photo spectrometer sensors that incorporate thin-film bandwidth specific optical filters that are fabricated with conventional CMOS chip fabrication methods. Optical emission and absorbance has been widely used to study the ultraviolet, optical and infrared spectra of processing plasmas for process development and control.
Optical sensors such as photodiodes, with or without passive optical filtering, can also be used to measure optical emission as radiated to the surface of the work piece. Use of multiple optical emissions sensors can enable the measure of multiple wavelength intensities as would be required for in situ actinometry or other optical emission spectroscopy methods.
The self-contained DC power source or reservoir may be formed provided by a number of means. Low-profile, commercially available coin-style batteries are widely available and can be used if they meet thermal specifications, trickle current levels, mA/hr ratings and are packaged (i.e. hermetically sealed) so as not to outgas electrolytic compounds. Also it is possible to use thin-film, multi-layer charge-capacitors devices which may be re-charged prior to use or within the plasma process from an optional TDC device and DC-DC converter. Yet other variations of low profile batteries, re-chargeable batteries, and charge-storage capacitors can be incorporated into the design to provide power to the apparatus during the plasma process or for external testing, device configuration and calibration when outside of the plasma processing system.
Although there is illustrated and described specific structure and details of operation, it is clearly understood that the same were merely for purposes of illustration and that changes and modifications may be readily made therein by those skilled in the art without departing from the spirit and the scope of this invention.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US5444637 *||Sep 28, 1993||Aug 22, 1995||Advanced Micro Devices, Inc.||Programmable semiconductor wafer for sensing, recording and retrieving fabrication process conditions to which the wafer is exposed|
|US5521866 *||Oct 6, 1993||May 28, 1996||Fujitsu Limited||Non-volatile semiconductor memory device having floating gate|
|US5526293 *||Dec 17, 1993||Jun 11, 1996||Texas Instruments Inc.||System and method for controlling semiconductor wafer processing|
|US5594328 *||Feb 14, 1995||Jan 14, 1997||Lukaszek; Wieslaw A.||Passive probe employing cluster of charge monitors for determining simultaneous charging characteristics of wafer environment inside IC process equipment|
|US5801386 *||May 28, 1996||Sep 1, 1998||Applied Materials, Inc.||Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using same|
|US5869877 *||Apr 23, 1997||Feb 9, 1999||Lam Research Corporation||Methods and apparatus for detecting pattern dependent charging on a workpiece in a plasma processing system|
|US5885402 *||Jul 17, 1996||Mar 23, 1999||Applied Materials||Diagnostic head assembly for plasma chamber|
|US5959309 *||Apr 7, 1997||Sep 28, 1999||Industrial Technology Research Institute||Sensor to monitor plasma induced charging damage|
|US5967661 *||Jun 2, 1997||Oct 19, 1999||Sensarray Corporation||Temperature calibration substrate|
|US5969639 *||Jul 28, 1997||Oct 19, 1999||Lockheed Martin Energy Research Corporation||Temperature measuring device|
|US6033922 *||Jul 28, 1999||Mar 7, 2000||Advanced Micro Devices, Inc.||Monitoring wafer temperature during thermal processing of wafers by measuring sheet resistance of a test wafer|
|US6051443 *||Dec 15, 1997||Apr 18, 2000||Stmicroelectronics S.R.L||Method for assessing the effects of plasma treatments on wafers of semiconductor material|
|US6190040 *||May 10, 1999||Feb 20, 2001||Sensarray Corporation||Apparatus for sensing temperature on a substrate in an integrated circuit fabrication tool|
|US6244121 *||Mar 6, 1998||Jun 12, 2001||Applied Materials, Inc.||Sensor device for non-intrusive diagnosis of a semiconductor processing system|
|US6325536 *||Jul 10, 1998||Dec 4, 2001||Sensarray Corporation||Integrated wafer temperature sensors|
|US6445030 *||Jan 30, 2001||Sep 3, 2002||Advanced Micro Devices, Inc.||Flash memory erase speed by fluorine implant or fluorination|
|US6458239 *||Sep 22, 1997||Oct 1, 2002||Surface Technology Systems Plc||Plasma processing apparatus|
|US6576922 *||Dec 21, 2001||Jun 10, 2003||Texas Instruments Incorporated||Ferroelectric capacitor plasma charging monitor|
|US6614051 *||May 10, 2002||Sep 2, 2003||Applied Materials, Inc.||Device for monitoring substrate charging and method of fabricating same|
|US6616332 *||Nov 18, 1999||Sep 9, 2003||Sensarray Corporation||Optical techniques for measuring parameters such as temperature across a surface|
|US6691068 *||Aug 22, 2000||Feb 10, 2004||Onwafer Technologies, Inc.||Methods and apparatus for obtaining data for process operation, optimization, monitoring, and control|
|US6738722 *||Apr 19, 2002||May 18, 2004||Onwafer Technologies, Inc.||Data collection and correction methods and apparatus|
|US20020020870 *||Aug 29, 2001||Feb 21, 2002||Mitsubishi Denki Kabushiki Kaisha||Nonvolatile semiconductor memory device and method of manufacturing the same|
|US20020173059 *||May 18, 2001||Nov 21, 2002||Shawming Ma||Method of real-time plasma charging voltage measurement on powered electrode with electrostatic chuck in plasma process chambers|
|US20050115673 *||Feb 3, 2003||Jun 2, 2005||Seiji Samukawa||On-wafer monitoring system|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US7072798 *||Feb 6, 2004||Jul 4, 2006||Tokyo Electron Limited||Semiconductor fabricating apparatus|
|US7434485 *||Jun 29, 2006||Oct 14, 2008||Applied Materials, Inc.||Sensor device for non-intrusive diagnosis of a semiconductor processing system|
|US7560007||Sep 11, 2006||Jul 14, 2009||Lam Research Corporation||In-situ wafer temperature measurement and control|
|US7875859 *||Mar 31, 2008||Jan 25, 2011||Tokyo Electron Limited||Ion energy analyzer and methods of manufacturing and operating|
|US8676537 *||Oct 31, 2009||Mar 18, 2014||Taiwan Semiconductor Manufacturing Company, Ltd.||Portable wireless sensor|
|US8816281||Mar 28, 2012||Aug 26, 2014||Tokyo Electron Limited||Ion energy analyzer and methods of manufacturing the same|
|US8847159||Mar 28, 2012||Sep 30, 2014||Tokyo Electron Limited||Ion energy analyzer|
|US9029728 *||Apr 14, 2014||May 12, 2015||Kla-Tencor Corporation||Methods of and apparatuses for measuring electrical parameters of a plasma process|
|US9087677||Mar 28, 2012||Jul 21, 2015||Tokyo Electron Limited||Methods of electrical signaling in an ion energy analyzer|
|US20040214435 *||Feb 6, 2004||Oct 28, 2004||Mitsuhiro Yuasa||Semiconductor fabricating apparatus|
|US20110035186 *||Oct 31, 2009||Feb 10, 2011||Taiwan Semiconductor Manufacturing Company, Ltd.||Portable wireless sensor|
|US20140312916 *||Apr 14, 2014||Oct 23, 2014||Kla-Tencor Corporation||Methods of and apparatuses for measuring electrical parameters of a plasma process|
|WO2008033234A2 *||Aug 30, 2007||Mar 20, 2008||Gaff Keith||In-situ wafer temperature measurement and control|
|International Classification||H01L21/00, H01J37/32|
|Cooperative Classification||H01J37/32935, H01L21/67253|
|Jan 31, 2006||AS||Assignment|
Owner name: ADVANCED PLASMA, INC., CALIFORNIA
Free format text: SECURITY AGREEMENT;ASSIGNOR:ADVANCED ENERGY INDUSTRIES, INC.;REEL/FRAME:017089/0881
Effective date: 20051209
|Feb 10, 2006||AS||Assignment|
|Mar 27, 2006||AS||Assignment|
Owner name: ADVANCED ENERGY INDUSTRIES, INC., COLORADO
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:AVANCED PLASMA, INC.;REEL/FRAME:017366/0240
Effective date: 20060301