|Publication number||US20050073487 A1|
|Application number||US 10/950,729|
|Publication date||Apr 7, 2005|
|Filing date||Sep 27, 2004|
|Priority date||Sep 29, 2003|
|Also published as||CN1604700A, CN100571477C, US7202841|
|Publication number||10950729, 950729, US 2005/0073487 A1, US 2005/073487 A1, US 20050073487 A1, US 20050073487A1, US 2005073487 A1, US 2005073487A1, US-A1-20050073487, US-A1-2005073487, US2005/0073487A1, US2005/073487A1, US20050073487 A1, US20050073487A1, US2005073487 A1, US2005073487A1|
|Original Assignee||Shoichiro Matsumoto|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (37), Referenced by (1), Classifications (16), Legal Events (3)|
|External Links: USPTO, USPTO Assignment, Espacenet|
The entire disclosure of Japanese Patent Application No. 2003-337924 including specification, claims, drawings and abstract is incorporated herein by reference.
1. Field of the Invention
The present invention relates to a stripe-type organic electroluminescence (EL) panel which comprises at least three kinds of pixels, in which the pixels, each including an organic EL element for emitting light of a particular color, are arranged in a matrix such that pixels for emitting the same color light are arranged in a column.
2. Description of the Related Art
Organic electroluminescence (hereinafter referred to as EL) panels have been receiving attention as one of the next generation flat displays to take place the liquid crystal displays. In the display panels (hereinafter referred to as an organic EL panel), the color of light emitted by each pixel can be determined depending on the kind of light emitting material used to form an organic light emitting layer for the pixel. Thus, pixels for different color light are formed so that RGB display can be realized.
In this organic EL panel, bright display is achieved by increasing the amount of current supplied to each organic EL element. However, increase of a current amount results in reduction of the service life of an organic EL element. Therefore, instead of increasing a current amount, it is desired to ensure the largest possible area for a light emitting region, or an aperture ratio, in each pixel.
A larger aperture ratio enables brighter display while suppressing current supplied to the organic EL element to a relatively small amount (See Japanese Patent Laid-open Publication No. 20001-290441). Increase of an aperture ratio means increase of the proportion of the light emitting region of an organic EL element relative to the entire area of each pixel.
Here, in an organic EL panel of an active type, at least two TFTs are provided in each pixel to drive the concerned organic EL element. Moreover, a data line for supplying luminance data to each pixel and a power supply line for supplying driving current to the organic EL element of each pixel are provided in a column direction, while a selection line (gate line) for selecting a pixel is provided in the row direction. Therefore, the areas where these wirings are placed are not available for use as a light emitting region.
Further, each pixel is provided with a selection TFT, to be turned on or off by the selection line, for supplying a voltage at the data line to a holding capacitor, and a driving TFT for supplying a driving current according to the voltage held at the holding capacitor, from the power supply line to the organic EL element. Therefore, the areas where the TFTs are placed are also not available for use as a light emitting region.
This limitation of an area available for a light emitting region leads to a problem of a reduced aperture ratio.
As described above, according to the present invention, one power supply line is shared by two pixel columns. When two power supply lines are combined into one line, basically, a line width which is twice the line width of a single line is necessary. However, as the line width of a single line includes an indispensable margin for each line, when two lines are combined into one line, the margin for one line becomes redundant, in other words, omissible. Therefore, the line width of one line resulting from two lines combined becomes smaller than that which results from simple addition of two lines.
Moreover, two lines of power supply and data lines are generally laid between pixel columns, and, in such a case, according to a design rule, a predetermined space must be ensured between the laid lines. However, by sharing a single power supply line for two pixel columns, the space which would otherwise be required between two wirings can be eliminated. This also contributes to reduction of the distance between pixel columns, so that the aperture ratio can be improved.
Further, the light color of a pixel column to be caused to share a single power supply line is appropriately selected such that the maximum current amounts for the respective power supply lines become close to one another. This can prevent use of a very wide line, compared to other lines, for a power supply line to be shared, and efficient current supply can thus be maintained.
When four kinds of pixels for R, G, B, and W colors are used, pixel columns for two colors may share one power supply line so that power supply lines can be arranged in a balanced manner. Specifically, when a pixel column for light color with the maximum current efficiency and that with the minimum current efficiency share a single power supply line, while pixel columns for other light colors share another power supply line, lines having a substantially constant width can be used for the respective power supply lines.
A preferred embodiment of the present invention will be described in detail based on the following figures, wherein:
In the following, an embodiment of the present invention will be described with reference to the accompanied drawings.
In each pixel, a selection TFT 1, a driver TFT 2, a holding capacitor 3, and an organic EL element 4 are provided. In this example, the selection TFT 1 is a p-channel TFT, and connected, via its source, to a data line DL, via its drain, to the gate of the driver TFF 2, and via its gate, to a gate line GL.
The driver TFT 2 is also a p-channel TFT, and connected, via its source, to a power supply line PL, and via its drain, to the node of the organic EL element 4. The cathode of the organic EL element 4 is grounded. The gate of the driver TFT 2 is connected to one end of the holding capacitor 3, the other end of which is connected to the holding capacitor line SL.
With this structure, by setting the gate line GL at a low level (L), the selection TFTs 1 in the relevant pixel row are turned on. Then, when pixel data for the respective pixel columns are supplied to the data lines DL for the respective pixel columns while the selection TFTs are in an ON state as described above, the gates of the respective driver TFTs 2 of the respective pixels are set at the voltage of the pixel data, and the voltage is held in the respective holding capacitors 3.
Thereafter, appropriate current according to the supplied pixel data is supplied from the power supply lines PL via the driving TFTs 2 to the respective organic EL elements 4 of the respective pixels, so that light emission according to the pixel data is achieved.
In this embodiment, each pixel emits light of either red (R), green (G), blue (B), or white (W), and the pixels for the same color light are arranged in the same column, that is, a stripe arrangement. As a result, pixels for R, B, G, and W light are arranged in the row direction. In this example, pixels for R and B light have a substantially identical width, while pixels for G light have the largest width and pixels for W light have the smallest width.
A power supply line PL is provided running either between R and B pixel columns or between G and W pixel columns. That is, a single power supply line PL is shared by either R and B pixel columns or by G and W pixel columns.
The size of each pixel is determined based on the current efficiency of the relevant organic EL element 4. “Current efficiency”, rephrased as an external quantum efficiency, refers to the amount of light emitted for a unit current, and, in this embodiment, corresponds to the maximum current amount used for display. Larger necessary maximum current means poorer current efficiency. The current efficiency depends on the kind of organic light emitting material, and so forth, used to form an organic EL element 4.
In this example, an organic EL element 4 for W light has the highest current efficiency, while an organic EL element 4 for G light has the lowest current efficiency. For color balancing in full-color display, an organic EL element 4 for a color with low current efficiency requires a current of a larger amount.
Here, as the service life of an organic EL element 4 is governed by the relevant current density, a constant current density is desired to be maintained with the respective organic EL elements 4. For this reason, an organic EL element 4 for a color with poor current efficiency is designed to have a larger area so that a constant current density can be maintained with the respective organic EL elements 4.
A pixel column for W light with the best current efficiency and a pixel column for G light with the poorest current efficiency share a single power supply line PL, while pixel columns for R and B light with intermediate current efficiency share another power supply line PL. With this arrangement, substantially close amounts of current flow in the respective power supply lines PL.
Here, the line width is determined based on the maximum current amount and a very wide line cannot be employed due to the upper limit of the line width. By balancing the current amounts as in this embodiment, it is possible to cause close amounts of current to flow in the power supply lines PL running between the pixel columns for R and B light and between pixel columns for G and W light, respectively, so that effective current supply can be achieved.
Here, a conventional structure requires one power supply line PL and one data line DL for each pixel column, and these two lines are arranged in a space between pixel columns. In general, according to a design rule, a space of about 4 μm must be ensured between two parallel running wirings.
In the case where two power supply lines PL, each having the width of about 10 μm, for example, are arranged between pixel columns, the total line width of these two lines is generally 24 μm. In this embodiment, however, where one, instead of two, power supply lines PL are used, it is known that the entire line width is as small as about 15 μm.
This is because, as the 10 μm width of each line includes an indispensable margin for one line, when two lines are combined into one line, the margin for one line becomes redundant, that is, omissible. In addition, as the space, which is 4 μm here, between two lines is also omissible, the total width of 9 μm can be eliminated, as compared to a case where two separate lines are used. Consequently, only a smaller area is necessary for installation of the wiring, and accordingly a larger aperture ratio can be ensured.
It should be noted that the superiority order of current efficiency among colors W, R, B, and G is not limited to the one described in this embodiment, that is, W, R, B, and G, but may vary depending on the light emitting material used for the respective colors.
For three color light emission for R, G, and B, pixels for R light with the best light emitting efficiency may use a dedicated power supply line, while pixels for G and B light with lower efficient light emitting efficiency may share another power supply line.
The semiconductor layers for the source 1 s extend so as to constitute a capacitor electrode 3 a, which, together with a holding capacitor line (not shown) arranged opposed to the capacitor electrode 3 a, constitute a holding capacitor 3.
The capacitor electrode 3 a is connected, via a contact, to a gate electrode 2 g of a driver TFT 2. The gate electrode 2 g runs straight in parallel to (and along with) the power supply line PL. It should be noted that the gate electrode 2 g is located partly below the power supply line PL.
The semiconductor layer for the driving TFT 2 (portions 2 s, 2 c, 2 d, all together referred to by reference numeral 2 p, described later) extends upward (in the drawing) from a contact formed on a portion of the power supply line PL, which projects into the pixel region, until it bends at a right angle such that the driving TFT 2 is formed in an L or invert-L shape. The other end of the driver TFT 2 is connected via a contact to the anode of the organic EL element 4, which is located above the driver TFT 2.
In this example, the driver TFT 2 is a p-channel TFT. The portion of the driver TFT 2, which is connected to a power supply line PL, is a source, while the portion thereof which is connected to the anode of the organic EL element 4 is a drain. The gate electrode of the driver TFT 2 is formed so as to cover the portion of the semiconductor layer, located between the source and drain, where no impurities are doped.
As described above, when the driver TFT 2 is shaped like an L or inverted L, at least a portion of the gate electrode 2 g can be placed below the power supply line PL. That is, through utilization of the space below the power supply line PL, the aperture ratio can be increased.
Further, as the contact with the organic EL element 4 (an area in the vicinity of the area with reference numeral 2 s in the drawing) is located in the center portion of each pixel region, the gate electrode 2 g can be formed straight. This can prevent reduction of the aperture ratio due to a gate electrode 2 g detouring around the contact.
Still further, as the respective pixel regions have a constant height in this embodiment, the gate line GL can be laid straight. Yet further, the power supply line PL and the data line DL also can be laid straight, even though the width of pixel regions varies, as the pixels are arranged in stripe.
Yet further, the shape of a light emitting region inside each pixel region is modified for efficient arrangement of itself. For example, in a G pixel with a wider pixel region, a holding capacitor 3 is arranged beside the selection TFT 1, leaving sufficient space for the light emitting region to extend upward (in the drawing) within the pixel region. In this manner, the pixel region is efficiently utilized.
All driver TFTs have the same size, and a structural relationship between a driver TFT and a concerned power supply line PL is identical for all pixels. That is, in all pixels, a contact between a driver TFT 2 and a power supply line PL and a contact between the driver TFT 2 and an organic EL element are identically positioned in the horizontal direction (in the drawing), as well as in view of the concerned power supply line PL. This arrangement can readily achieve constant current supply capacities of the respective driving TFTs 2.
It should be noted that, in
As shown, a buffer layer 11 comprising SiN and SiO2 laminated layers is formed over the entire surface of a glass substrate 30, and a poly-silicon semiconductor layer (an active layer) 2 p is formed thereon in a predetermined area (an area for a TFT).
Further, covering the entire surface of the active layer 2 p and the buffer layer 11, a gate insulating film 13 is formed. The gate insulating film 13 comprises, for example, SiO2 and SiN laminated layers. On the gate insulating film 13 and in an area above the channel region 2 c, a gate electrode 2 g is formed using Cr, for example.
Then, using the gate electrode 2 g as a mask, impurities are doped into the active layer 2 p, whereby a channel region, where no impurities are doped, is formed in the middle of the active layer 20 below the gate electrode 2 g, and source and drain regions 2 s and 2 d, where impurities are doped, are formed on both sides of the channel region 2 c in the active layer 2 p.
Further, covering the entire surface of the gate insulating film 13 and the gate electrode 2 g, an interlayer insulating film 15 is formed. Then, contact holes are formed, piercing through the interlayer insulating film 15, above the source region 2 s and the drain region 2 d, respectively, and a source electrode 53 and a drain electrode 26 are formed on the surface of the interlayer insulating film 15 through the respective contact holes. The source electrode 53 is connected to a power supply line (not shown). The thus formed driving TFT may be either a p-channel TFT, as is in the above example, or an n-channel TFT.
Still further, a planarization film 17 is formed covering the entire surface of the interlayer insulating film 15. Then, a transparent electrode 61 is formed on the planarization film 17, for serving as an anode of the organic EL element 4. Another contact hole is formed above the drain electrode 26, piercing through the planarization film 17, and the drain electrode 26 is connected to the transparent electrode 61 through the contact hole.
It should be noted that the interlayer insulating film 15 and the planarization film 17 are generally made using an organic film such as acrylic resin, and may alternatively be made using an inorganic film, such as TEOS. The source electrode 53 and the drain electrode 26 are formed using metal such as aluminum, while the transparent electrode 61 is generally formed using an ITO.
Further, an organic layer 65, which comprises a hole transport layer 62, an organic light emitting layer 63, and an electron transport layer 64, is laid on the transparent electrode 61. The hole transport layer 62 and the electron transport layer 64 cover the entire surface of the pixels. The organic light emitting layer 63 is slightly larger than the light emitting region. Further, an opposing electrode 66, comprising metal, such as aluminum (AL), is formed over the entire surface of the pixels, to serve as a cathode.
In this structure, a planarization film 67 is formed surrounding the transparent electrode 61 and below the hole transport layer 62. The planarization film 67 defines a part of the hole transport layer 62, which is in direct contact with the transparent electrode 61, and the part constitutes a light emitting region for a concerned pixel.
It should be noted that the planarization film 67 is generally made using an organic film made of acrylic resin or the like, and may alternatively be made using an inorganic film, such as TEOS.
The hole transport layer 62, the organic light emitting layer 63, and the electron transport layer 64 are made using material which is generally used for an organic EL element. The color of emission light depends on the material used to form the organic light emitting layer 63, which is generally dopant. For example, NPB is used for the hole transport layer 62; TBADN+DCJTB is used for an organic light emitting layer 63 for red light; Alq3+CFDMQA is used for an organic light emitting layer 63 for green light; TBADN+NPB is used for an organic light emitting layer 63 for blue light; and Alq3 is used for the electron transport layer 64.
With the above-described structure, when the driver TFT 2 is turned on according to the voltage set in the gate electrode 2 g, current is supplied from the power supply line via the transparent electrode 61 to the opposing electrode 66, and light emission according to the current is caused in the organic light emitting layer 63. The emitted light passes through the transparent electrode 61, the planarization film 17, the interlayer insulating film 15, the gate insulating film 13, and the glass substrate 30, to be emitted downward (in the drawing).
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US5684365 *||Dec 14, 1994||Nov 4, 1997||Eastman Kodak Company||TFT-el display panel using organic electroluminescent media|
|US6028580 *||Sep 25, 1996||Feb 22, 2000||Sharp Kabushiki Kaisha||Liquid crystal display device|
|US6040813 *||Dec 9, 1996||Mar 21, 2000||Matsushita Electric Industrial Co., Ltd.||Active matrix liquid crystal display device and a method for driving the same|
|US6268631 *||Apr 20, 1999||Jul 31, 2001||Semiconductor Energy Laboratoty Co., Ltd.||Glass substrate assembly, semiconductor device and method of heat-treating glass substrate|
|US6307322 *||Dec 28, 1999||Oct 23, 2001||Sarnoff Corporation||Thin-film transistor circuitry with reduced sensitivity to variance in transistor threshold voltage|
|US6362798 *||Mar 17, 1999||Mar 26, 2002||Seiko Epson Corporation||Transistor circuit, display panel and electronic apparatus|
|US6366025 *||Feb 24, 2000||Apr 2, 2002||Sanyo Electric Co., Ltd.||Electroluminescence display apparatus|
|US6456013 *||Sep 27, 2000||Sep 24, 2002||Sanyo Electric Co., Ltd.||Thin film transistor and display device|
|US6469318 *||Sep 28, 2001||Oct 22, 2002||Sanyo Electric Co., Ltd.||Semiconductor device having thin film transistor for supplying current to driven element|
|US6522079 *||Sep 28, 2000||Feb 18, 2003||Sanyo Electric Co., Ltd.||Electroluminescence display device|
|US6522315 *||Feb 17, 1998||Feb 18, 2003||Seiko Epson Corporation||Display apparatus|
|US6545424 *||Dec 26, 2000||Apr 8, 2003||Seiko Epson Corporation||Display device|
|US6570584 *||May 15, 2000||May 27, 2003||Eastman Kodak Company||Broad color gamut display|
|US6690110 *||Sep 28, 2000||Feb 10, 2004||Sanyo Electric Co., Ltd.||Line structure in electroluminescence display device|
|US6690117 *||Feb 22, 2002||Feb 10, 2004||Sanyo Electric Co., Ltd.||Display device having driven-by-current type emissive element|
|US6750833 *||Sep 20, 2001||Jun 15, 2004||Seiko Epson Corporation||System and methods for providing a driving circuit for active matrix type displays|
|US6771028 *||Apr 30, 2003||Aug 3, 2004||Eastman Kodak Company||Drive circuitry for four-color organic light-emitting device|
|US6784454 *||Sep 28, 2001||Aug 31, 2004||Sanyo Electric Co., Ltd.||Contact between element to be driven and thin film transistor for supplying power to element to be driven|
|US6798405 *||Sep 28, 2001||Sep 28, 2004||Sanyo Electric Co., Ltd.||Thin film transistor for supplying power to element to be driven|
|US6809482 *||May 31, 2002||Oct 26, 2004||Semiconductor Energy Laboratory Co., Ltd.||Light emitting device and method of driving the same|
|US6903731 *||Apr 13, 2001||Jun 7, 2005||Semiconductor Energy Laboratory Co., Ltd.||Light emitting device|
|US6919681 *||Apr 30, 2003||Jul 19, 2005||Eastman Kodak Company||Color OLED display with improved power efficiency|
|US20020101394 *||Sep 28, 2001||Aug 1, 2002||Katsuya Anzai||Thin film transistor for supplying power to element to be driven|
|US20030067458 *||Sep 27, 2002||Apr 10, 2003||Katsuya Anzai||Active matrix type display device|
|US20030076046 *||Feb 23, 2000||Apr 24, 2003||Naoaki Komiya||Emissive display device and electroluminescence display device with uniform luminance|
|US20030146887 *||Feb 5, 2003||Aug 7, 2003||Kabushiki Kaisha Toshiba||Display device|
|US20030189535 *||Nov 18, 2002||Oct 9, 2003||Shoichiro Matsumoto||Semiconductor device and display apparatus|
|US20030197664 *||May 12, 2003||Oct 23, 2003||Semiconductor Energy Laboratory Co., Ltd.||Electro-optical device|
|US20030197666 *||Jan 13, 2003||Oct 23, 2003||Hajime Akimoto||Image display device|
|US20040012550 *||Jul 15, 2003||Jan 22, 2004||Semiconductor Energy Laboratory Co., Ltd.||Method of driving display device|
|US20040027318 *||Jul 15, 2003||Feb 12, 2004||Semiconductor Enegry Laboratory Co., Ltd., A Japan Corporation||Electronic device and driving method thereof|
|US20040080276 *||Sep 10, 2003||Apr 29, 2004||Nobuyuki Ito||Display and method for manufacturing the same|
|US20040080470 *||Jun 23, 2003||Apr 29, 2004||Semiconductor Energy Laboratory Co., Ltd., A Japan Corporation||Light-emitting device|
|US20040178743 *||Mar 29, 2004||Sep 16, 2004||Eastman Kodak Company||Color OLED display system having improved performance|
|US20040178973 *||Mar 13, 2003||Sep 16, 2004||Eastman Kodak Company||Color OLED display system|
|US20040217928 *||Jun 2, 2004||Nov 4, 2004||Semiconductor Energy Laboratory Co., Ltd., A Japan Corporation||Adhesion type area sensor and display device having adhesion type area sensor|
|US20040222749 *||Jun 2, 2004||Nov 11, 2004||Semiconductor Energy Laboratory Co., Ltd. A Japan Corporation||Light emitting device and electronic appliance|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US7759676 *||Oct 23, 2006||Jul 20, 2010||Samsung Electronics Co., Ltd.||Thin film transistor array panel having groups of proximately located thin film transistors and manufacturing method thereof|
|International Classification||H05B33/14, G09G3/30, G09F9/30, H01L27/32, H01L51/50, H05B33/12, H05B33/26, G09G3/10, H05B3/08, H05B33/00|
|Cooperative Classification||H01L27/3213, H01L27/3276, G09G2300/0842, G09G2300/0452|
|Dec 7, 2004||AS||Assignment|
Owner name: SANYO ELECTRIC CO., LTD., JAPAN
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MATSUMOTO, SHOICHIRO;REEL/FRAME:016052/0762
Effective date: 20041122
|Sep 9, 2010||FPAY||Fee payment|
Year of fee payment: 4
|Sep 23, 2014||FPAY||Fee payment|
Year of fee payment: 8