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Publication numberUS20050139160 A1
Publication typeApplication
Application numberUS 11/059,846
Publication dateJun 30, 2005
Filing dateFeb 16, 2005
Priority dateJan 26, 2002
Also published asUS6866746, US20030221780
Publication number059846, 11059846, US 2005/0139160 A1, US 2005/139160 A1, US 20050139160 A1, US 20050139160A1, US 2005139160 A1, US 2005139160A1, US-A1-20050139160, US-A1-2005139160, US2005/0139160A1, US2005/139160A1, US20050139160 A1, US20050139160A1, US2005139160 A1, US2005139160A1
InventorsLawrence Lei, Alfred Mak, Gwo-Chuan Tzu, Avi Tepman, Ming Xi, Walter Glenn
Original AssigneeApplied Materials, Inc.
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
Clamshell and small volume chamber with fixed substrate support
US 20050139160 A1
Abstract
Embodiments of the present invention generally relate to a small volume chamber with a substrate support. One embodiment of a processing chamber includes a first assembly having a substrate support, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the substrate support. The chamber may further include a gas distribution assembly disposed over the substrate support. The first assembly and the gas distribution assembly can be selectively positioned between an open position and a closed position.
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Claims(22)
1. A processing chamber adapted for cyclical layer deposition, comprising:
a first assembly having a substrate support, the substrate support having a substrate receiving surface;
a gas distribution assembly disposed over the substrate support, the gas distribution assembly having a lid plate and an expanding channel; and
a hinge assembly coupling the first assembly to the gas distribution assembly.
2. The processing chamber of claim 1, wherein the expanding channel has an upper portion extending to a lower portion with an increasing diameter.
3. The processing chamber of claim 1, wherein the lid plate has a lower surface coupled to the expanding channel, at least a portion of the lower surface tapering from the expanding channel to a peripheral portion of the lid plate.
4. The processing chamber of claim 1, wherein the expanding channel has at least one gas inlet positioned substantially horizontally to a longitudinal axis of the lid plate.
5. The processing chamber of claim 1, wherein the gas distribution assembly further comprises a fluid injection assembly.
6. The processing chamber of claim 1, the first assembly further comprising:
a pumping ring disposed around a perimeter of the substrate receiving surface, the pumping ring forming at least a portion of a pumping channel and having one or more apertures formed therethrough, wherein the one or more apertures provide fluid communication between the pumping channel and a processing zone between the substrate support and the gas distribution assembly.
7. The processing chamber of claim 6, wherein the pumping ring is shaped and sized so that the one or more apertures are positioned below a plane defined by the substrate receiving surface.
8. The processing chamber of claim 6, wherein the apertures are distributed evenly around the pumping ring.
9. The processing chamber of claim 1, further comprising a gas port below the substrate support, the gas port adapted to provide a bottom purge gas through the gap between the substrate support and the pumping channel.
10. The processing chamber of claim 1, further comprising a resistive heating element disposed in the substrate support.
11. A processing chamber adapted for cyclical layer deposition, comprising:
a first assembly having a substrate support, the substrate support having a substrate receiving surface; and
a pumping ring disposed around a perimeter of the substrate receiving surface, the pumping ring forming at least a portion of a pumping channel and having one or more apertures formed therethrough;
a gas distribution assembly disposed over the substrate support, the gas distribution assembly having a lid plate and an expanding channel, wherein the expanding channel has an upper portion extending to a lower portion with an increasing diameter; and
a hinge assembly coupling the first assembly to the gas distribution assembly.
12. The processing chamber of claim 11, wherein the lid plate has a lower surface coupled to the expanding channel, at least a portion of the lower surface tapering from the expanding channel to a peripheral portion of the lid plate.
13. The processing chamber of claim 11, wherein the expanding channel has at least one gas inlet positioned substantially horizontally to a longitudinal axis of the lid plate.
14. The processing chamber of claim 11, wherein the gas distribution assembly further comprises a fluid injection assembly.
15. The processing chamber of claim 11, wherein the one or more apertures provide fluid communication between the pumping channel and a processing zone between the substrate support and the gas distribution assembly.
16. The processing chamber of claim 11, wherein the pumping ring is shaped and sized so that the one or more apertures are positioned below a plane defined by the substrate receiving surface.
18. The processing chamber of claim 11, wherein the apertures are distributed evenly around the pumping ring.
19. The processing chamber of claim 11, further comprising a resistive heating element disposed in the substrate support.
20. A processing chamber adapted for cyclical layer deposition, comprising:
a first assembly having a substrate support, the substrate support having a substrate receiving surface;
a pumping ring disposed around a perimeter of the substrate receiving surface, the pumping ring forming at least a portion of a pumping channel and having one or more apertures formed therethrough;
a gas distribution assembly disposed over the substrate support, the gas distribution assembly having a lid plate with a lower surface coupled to an expanding channel, at least a portion of the lower surface tapering from the expanding channel to a peripheral portion of the lid plate; and
a hinge assembly coupling the first assembly to the gas distribution assembly.
21. The processing chamber of claim 20, wherein the expanding channel has at least one gas inlet positioned substantially horizontally to a longitudinal axis of the lid plate.
22. The processing chamber of claim 20, wherein the gas distribution assembly further comprises a fluid injection assembly.
23. The processing chamber of claim 20, further comprising a resistive heating element disposed in the substrate support.
Description
    CROSS-REFERENCE TO RELATED APPLICATIONS
  • [0001]
    This application is a continuation of co-pending U.S. patent application Ser. No. 10/302,774, filed Nov. 21, 2002, which claims benefit of U.S. provisional patent application Ser. No. 60/352,190, filed Jan. 26, 2002. Each of the aforementioned related patent applications is herein incorporated by reference.
  • BACKGROUND OF THE INVENTION
  • [0002]
    1. Field of the Invention
  • [0003]
    Embodiments of the present invention generally relate to a clamshell and small volume chamber with a fixed substrate support.
  • [0004]
    2. Description of the Related Art
  • [0005]
    Reliably producing sub-micron and smaller features is one of the key technologies for the next generation of very large scale integration (VLSI) and ultra large scale integration (ULSI) of semiconductor devices. However, as the fringes of circuit technology are pressed, the shrinking dimensions of interconnects in VLSI and ULSI technology have placed additional demands on the processing capabilities. The multilevel interconnects that lie at the heart of this technology require precise processing of high aspect ratio features, such as vias and other interconnects. Reliable formation of these interconnects is very important to VLSI and ULSI success and to the continued effort to increase circuit density and quality of individual substrates.
  • [0006]
    As circuit densities increase, the widths of vias, contacts, and other features, as well as the dielectric materials between them, decrease to sub-micron dimensions (e.g., less than 0.20 micrometers or less), whereas the thickness of the dielectric layers remains substantially constant, with the result that the aspect ratios for the features, i.e., their height divided by width, increase. Many traditional deposition processes have difficulty filling sub-micron structures where the aspect ratio exceeds 4:1. Therefore, there is a great amount of ongoing effort being directed at the formation of substantially void-free and seam-free sub-micron features having high aspect ratios.
  • [0007]
    FIG. 1 is a schematic cross-sectional view of a prior art processing chamber 100 defining a processing region 150. An opening 112 in the chamber 100 provides access for a robot (not shown) to deliver and retrieve substrates 122 from the chamber 100. A substrate support 124 supports the substrate 122 on a substrate receiving surface 126 in the chamber 100. The substrate support 124 is mounted to a lift motor 130 to raise and lower the substrate support 124. In one aspect, the lift motor 130 lowers the substrate support 124 to a substrate transferring position in which the substrate receiving surface 126 is below the opening 112 so that substrates 122 may be transferred to or from the substrate support 124. In another aspect, the lift motor 130 raises the substrate support 124 to a deposition position in which the substrate 122 is in close proximity to a showerhead 140. The showerhead 140 has a central gas inlet 144 for the injection of gases and has a plurality of holes 142 to accommodate the flow of gases therethrough to the substrate 122 disposed on the substrate support 124.
  • [0008]
    One problem with the use of chamber 100 is aligning the substrate support 124 within the chamber 100. The substrate support 124 may require removal so that the area under the substrate support 124 can be cleaned during routine maintenance. Reinstallation of the substrate support 124 requires aligning the substrate support 124 within the chamber 100. Misalignment of the substrate support 124 may cause non-uniformity of processes performed in the chamber.
  • [0009]
    Thus, there is a need for an improved processing chamber useful for deposition processes such as atomic layer deposition and cyclical layer deposition.
  • SUMMARY OF THE INVENTION
  • [0010]
    Embodiments of the present invention generally relate to a clamshell and small volume chamber with a fixed substrate support. One embodiment of a processing chamber includes a fixed substrate support having a substrate receiving surface, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the fixed substrate support. The pumping ring forms at least a portion of a pumping channel and has one or more apertures formed therethrough. The chamber may further include a gas-flow diffuser disposed radially inward of the apertures of the pumping ring.
  • [0011]
    Another embodiment of a processing chamber includes a first assembly comprising a fixed substrate support and a second assembly comprising a gas distribution assembly. The first assembly includes a first assembly body that is shaped and sized so that at least a portion of the first assembly body is below the substrate receiving surface of the substrate support. A hinge assembly couples the first assembly and the second assembly. The first assembly and the second assembly can be selectively positioned between an open position and a closed position.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • [0012]
    So that the manner in which the above recited features of the present invention are attained and can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
  • [0013]
    FIG. 1 is a schematic cross-sectional view of a prior art processing chamber.
  • [0014]
    FIG. 2 is a schematic perspective view of one embodiment of a chamber of the invention in an open position.
  • [0015]
    FIG. 3 is a schematic perspective view of the chamber of FIG. 2 in a closed position.
  • [0016]
    FIG. 4 is a schematic cross-sectional view of the bottom assembly of the chamber of FIG. 2.
  • [0017]
    FIG. 5 is a schematic cross-sectional view of one embodiment of a gas distribution assembly.
  • [0018]
    FIG. 6 is a schematic cross-sectional view of another embodiment of a gas distribution assembly.
  • [0019]
    FIG. 7 is a schematic cross-sectional view of another embodiment of a gas distribution assembly.
  • [0020]
    FIG. 7A is a top cross-sectional view of the gas distribution assembly of FIG. 7.
  • [0021]
    FIG. 8 is a schematic cross-sectional view of another embodiment of a gas distribution assembly.
  • [0022]
    FIG. 9 is a schematic cross-sectional view of the top assembly and the bottom assembly in a closed position.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
  • [0023]
    FIG. 2 is a schematic perspective view of one embodiment of a chamber 200 comprising a top assembly 210 and a bottom assembly 240 in an open position. The bottom assembly 240 includes a fixed substrate support 242 having a substrate receiving surface 244 to support a substrate thereon. The term “fixed substrate support” as used herein is defined to refer to a substrate support which is substantially non-moving vertically (i.e., a fixed elevation) during processing of substrates within the chamber. In some embodiments, the fixed substrate support may rotate and/or may move horizontally during processing of substrates. It is understood that a “fixed substrate support” may be repositioned, removed, or replaced from the chamber when substrate are not being processed within the chamber. The top assembly 210 includes a gas distribution assembly 212 to provide process gases (i.e. reaction gases, purge gases, and/or carrier gases) to the substrate support 242.
  • [0024]
    The top assembly 210 and the bottom assembly 240 act as a “clamshell pair” which may be selectively moved between an open position and a closed position. An open position provides access for cleaning or replacing of interior components of the chamber 200. In a closed position, the gas distribution assembly 210 is disposed over the substrate receiving surface 244 of the substrate support 242 for processing of substrates through the chamber 200. In a closed position, a processing zone is defined between the substrate support 242 and the gas distribution assembly 212 and between the sidewall of the chamber 200. The top assembly 210 and the bottom assembly 240 are coupled together with a hinge assembly 220. The top assembly 240 includes a handle 222 to assist in moving the chamber 200 between an open position and a closed position.
  • [0025]
    As shown in this embodiment, the top assembly 210 includes a partial sidewall 236 and the bottom assembly 240 includes a partial sidewall 238. The partial sidewall 236 of the top assembly 210 and the partial sidewall 238 of the bottom assembly 240 together form the sidewall of the chamber 200. In one aspect when the chamber 200 is in an open position, the partial sidewall 238 of the bottom assembly 240 permits access below the substrate support 242 without having to remove the substrate support 242 and, thus, allows for simplified cleaning of areas underneath the substrate support 242.
  • [0026]
    FIG. 3 is a schematic perspective view of the top assembly 210 and the bottom assembly 240 of FIG. 2 in a closed position. The top assembly 210 may include one or more valves 230, such as electronically controlled valves, pneumatically controlled valves, or other suitable valves, to deliver gases to the gas distribution system 212 (as shown in FIG. 2). Preferably, the valves are three-port valves adapted to receive a flow of a reactant gas from a first port, adapted to receive a flow of a purge gas from a second port, and adapted to deliver the purge gas alone and in combination with the reactant gas to a third port. Preferably, the valves 230 are mounted to or in close proximity to a top surface of the top assembly 210 and may be mounted in any position (i.e., vertically, horizontally, or any position in between). The top assembly 210 may further include a gate valve 232 having an inlet adapted to be in fluid communication with a remote plasma source 234. In one embodiment, the remote plasma source 234 is adapted to provide a plasma to the gas distribution assembly 212 (as shown in FIG. 2) to clean chamber components. One example of a remote plasma source is an ASTRON™ remote plasma source available from by ASTeX of Woburn, Mass.
  • [0027]
    FIG. 4 is a schematic cross-sectional view of the bottom assembly 240 of FIG. 2. The upper surface of the body 241 of the bottom assembly 240 is angled so that one portion of the body 241 a is above a plane of the substrate receiving surface 244 and one portion of the body 241 b is below the plane of the substrate receiving surface 244. The portion of the body 241 a above the plane of the substrate receiving surface 244 forms the partial sidewall 238. In one aspect, the portion of the body 241 b below the plane of the substrate receiving surface permits access below the substrate support 242 by removing a pumping ring 270, which is discussed in greater detail below. Since the area underneath the substrate support 242 may be accessed without having to remove the substrate support 242, cleaning of this area is simplified.
  • [0028]
    The bottom assembly 240 may include a slit valve 266 located in the portion of the body 241 a above the plane of the substrate receiving surface 244 to provide access for a robot to deliver and retrieve substrates from the chamber. Alternatively, the top assembly 210 may include a slit valve. In either case, the slit valve 266 is preferably adapted to provide access for a thin wrist robot so that the volume of the processing zone defined between the substrate support 242 and the gas distribution assembly 212 may be reduced.
  • [0029]
    Lift pins 252 are movably disposed through the substrate support 242 to raise and lower a substrate over the substrate receiving surface 244. A lift plate 254 connected to a lift motor 256 may be mounted to the bottom assembly 240 to raise and lower the lift pins 252. The substrate support 242 may be adapted to secure a substrate thereon using a vacuum chuck. For example, the substrate receiving surface 244 may include raised areas 246 (i.e., bumps) adapted to support a substrate thereon and may include recessed areas 248 (i.e., grooves) adapted to support a low pressure region via fluid communication with a vacuum supply from a vacuum introduced through a port 250. Alternatively or in addition, the port 250 may provide a backside gas to enhance thermal conduction between the substrate support 242 and a substrate disposed thereon. The substrate support may also be adapted to hold a substrate thereon, by other techniques. For example, the substrate support may include an electrostatic chuck. The substrate support 242 may be heated using an embedded heated element 258 to heat a substrate disposed thereon. The substrate support may also be heated using other heating sources, such as heating lamps disposed above and/or below the substrate. A purge member 260, such as a purge ring, may be positioned on or adjacent the substrate support 242 to form an annular purge gas channel 262. A purge gas conduit 264 is formed through the substrate support 242 and the stem 243 of the substrate support 242. The purge gas conduit 264 is in fluid communication with a purge gas supply to provide a purge gas to the annular purge gas channel 262. A purge gap 263 between the purge member 260 and the substrate support 242 directs the purge gas to a perimeter portion of the substrate supporting surface 242 to help prevent deposition at the edge and/or backside of the substrate.
  • [0030]
    The bottom assembly 240 may further include a pumping ring 270 which defines an upper surface of a pumping channel 272. The pumping ring 270 may be an annular member or any other shape depending on the shape of the substrate receiving surface 244. The pumping channel 272 is in fluid communication with a pumping port 276 coupled to a vacuum source 278. In one embodiment, the pumping port 276 is located adjacent one side of the chamber 200. The pumping ring 270 includes a plurality of apertures 274 formed therethrough for the flow of gases from the processing zone to the pumping channel 272 and then, from the pumping channel 272 to the pumping port 276 exiting the chamber 200. Preferably, the upper surface of the pumping channel 272 is disposed below a plane of the substrate receiving surface 244. As shown in this embodiment, the apertures are uniformly sized and uniformly spaced around the pumping ring 270. In other embodiments, the size, the number, and the position of the apertures 274 in the pumping ring 270 may vary depending on the desired flow pattern of gases across the substrate receiving surface 244. For example, the apertures 274 may be adapted to help provide a uniform pressure drop around the perimeter of the substrate receiving surface 244. In one example, the size of the apertures 274 a in close proximity to the pumping port 276 may be smaller than the size of the apertures 274 b farther from the pumping port 276. In another example, the apertures 274 are uniformly size and are positioned in greater number farther from the pumping port 276.
  • [0031]
    In one aspect, the diameter of each aperture 274 is preferably greater than the depth of the aperture 274 so that the diameter of each aperture 274 controls restriction of gas flow therethrough rather than the depth of the aperture 274. In another aspect, the total cross-sectional area of the apertures 274 is less than the cross-sectional area 277 of the pumping port 276 so that apertures 274 choke the flow of gas flow therethrough to the pumping port 276. Preferably, the total cross-sectional area of the apertures 274 is between about {fraction (1/10)} and about ⅓ the cross-sectional area 277 of the pumping port 276. In general, the total cross-sectional area of the apertures 274 for a chamber operated at a low pressure is greater than the total cross-sectional area of apertures 274 for a chamber operated at a high pressure.
  • [0032]
    A gas-flow diffuser 280 may be disposed on the pumping ring 270 radially inward of the apertures 274 to change the flow path of gases to the apertures 274. As shown in FIG. 2 and FIG. 4, the gas-flow diffuser 280 extends partially around the substrate receiving surface 244 and is tapered from its highest height proximate apertures 274 a adjacent the pumping port 276. In one aspect, the gas-flow diffuser 280 extends partially around the substrate receiving surface 244 to allow for transport of a substrate between the slit valve 266 and the lift pins 252. In other embodiments, the gas-flow diffuser 280 may extend entirely around the substrate receiving surface 244. In addition, the height of the gas-flow diffuser 280 may vary along its length in steps and/or in tapered segments. Alternatively, the gas-flow diffuser may have a uniform height. At least a portion of the gas-flow diffuser 280 extends above a plane defined by the substrate receiving surface 244. Not wishing to be bound by theory, it is believed that the gas-flow diffuser 280 helps provide a uniform pressure drop around the substrate receiving surface 244.
  • [0033]
    In one embodiment, the substrate support 242 is sized and shaped to provide a gap 284 between the substrate support 242 and the pumping ring 270. The width of the gap 284 may be selected to control heat transfer between the substrate support 242 and the pumping ring 270, to control the flow of purge gas between the substrate support 242 and pumping ring 270, and/or to allow for thermal expansion of the substrate support 242. In one embodiment, the width of the gap 284 is between about 0.03 inches and about 0.12 inches. A purge gas port 286 may be disposed below the substrate support 242 to provide a bottom purge gas which flows through the gap 284 to the apertures 274 to prevent the flow of process gases below the substrate support 242 and prevent gases from entering and depositing in the area below the substrate support 242. In one embodiment, the purge gas port 286 is adapted to provide a bottom purge gas to a higher pressure than the pressure in the processing zone defined between the substrate support 242 and the gas distribution assembly 212.
  • [0034]
    In reference to FIG. 2, the bottom surface of the body 211 of the top assembly 210 is angled to match the angled upper surface of the body 241 of the bottom assembly 240. The gas distribution assembly 212 may be any suitable gas distribution apparatus or showerhead. FIG. 5 is a schematic cross-sectional view of one embodiment of gas distribution assembly 212A. The gas distribution system illustrated in FIG. 5 is more fully described in U.S. patent application (Ser. No. 10/032,293) entitled “Chamber Hardware Design For Titanium Nitride Atomic Layer Deposition” to Nguyen et al. filed on Dec. 21, 2001, which is incorporated by reference in its entirety to the extent not inconsistent with the present disclosure.
  • [0035]
    Gas distribution assembly 212A comprises a lid plate. 522 and a distribution plate 530 disposed below the lid plate 522 which provide one or more isolated zones/flow paths therethrough. As shown in FIG. 5, a first flow path is provided through an outlet gas channel 554A formed through the lid plate 554 and through centrally located openings 531A and 531B formed through the distribution plate 530 to the processing zone. An inner diameter of the gas channel 554A gradually increases within the lid plate 522 to decrease the velocity of the flow of gas therethrough. A dispersion plate 532 is also disposed adjacent the openings 531A, 531B to prevent the flow of gas therethrough from impinging directly on the substrate surface by slowing and re-directing the velocity profile of the flowing gases. Without this re-direction, the force asserted on the substrate by the flow of gas through the first flow path may prevent deposition because the kinetic energy of the impinging gas may sweep away reactive molecules already disposed on the substrate surface. A second flow path is provided through an outlet gas channel 554B formed through the lid plate 554, through a cavity 556 formed between the lid plate 554 and distribution plate 530, and through apertures 533 formed in the distribution plate 530. The position of the apertures 533 may vary along the cavity 556. Different valves are coupled to the outlet gas channel 554A and the outlet gas channel 554B to provide a first gas through the first flow path and to provide a second gas through the second flow path. In other embodiments, the lid plate 522 and the distribution plate 530 may be adapted to provide one flow path or more than two flow paths.
  • [0036]
    FIG. 6 is a schematic cross-sectional view of another embodiment of a gas distribution system 212B. The gas distribution system 212B is shown and described in U.S. patent application Ser. No. 10/016,300 entitled “Lid Assembly For A Processing System To Facilitate Sequential Deposition Techniques,” filed on Dec. 12, 2001, which claims priority to U.S. Provisional Application Ser. No. 60/305,970 filed on Jul. 16, 2001, which are both incorporated by reference in their entirety to the extent not inconsistent with the present disclosure.
  • [0037]
    The gas distribution system 212B includes a lid 621 and a process fluid injection assembly 630 to deliver reactive gases (i.e. precursor, reductant, oxidant), carrier gases, purge gases, cleaning gases and/or other fluids into the processing chamber. The fluid injection assembly 630 includes a gas manifold 634 mounting a plurality of control valves 632 (one is shown in FIG. 6), and a baffle plate 636. Each valve 632 is fluidly coupled to a separate trio of gas channels 671 a, 671 b, 673 (one trio is shown in FIG. 6) of the gas manifold 634. Gas channel 671 a provides passage of gases through the gas manifold 634 to the valve 632. Gas channel 671 b delivers gases from the valve 632 through the gas manifold 634 and into a gas channel 673. Channel 673 is fluidly coupled to a respective inlet passage 686 disposed through the lid 621. Gases flowing through the inlet passages 686 flow into a plenum or region 688 defined between the lid 621 and the baffle plate 636 before entering the processing zone. The baffle plate 636 is utilized to prevent gases injected into the processing zone from blowing off gases adsorbed onto the surface of the substrate. The baffle plate 636 may include a mixing lip 684 to re-direct gases toward the center of the plenum 688 and into the process chamber.
  • [0038]
    FIG. 7 is a schematic cross-sectional view of another embodiment of a gas distribution system 212C. The gas distribution system 212C is shown and described in U.S. patent application Ser. No. 10/032,284 entitled “Gas Delivery Apparatus and Method for Atomic Layer Deposition,” filed on Dec. 21, 2001, which claims benefit of U.S. provisional Patent Application Ser. No. 60/346,086, entitled “Method and Apparatus for ALD Deposition,” filed Oct. 26, 2001, which are both incorporated by reference in their entirety to the extent not inconsistent with the present disclosure.
  • [0039]
    The gas distribution system 212C comprises a chamber lid 732. The chamber lid 732 includes an expanding channel 734 extending from a central portion of the chamber lid 732 and a bottom surface 760 extending from the expanding channel 734 to a peripheral portion of the chamber lid 732. The bottom surface 760 is sized and shaped to substantially cover a substrate disposed on the substrate support. The expanding channel 734 has gas inlets 736A, 736B to provide gas flows from two similar valves. The gas inlets 736A, 736B are located adjacent the upper portion 737 of the expanding channel 734. In other embodiments, one or more gas inlets may be located along the length of the expanding channel 734 between the upper portion 737 and a lower portion 735. Each gas conduit 750A, 750B and gas inlet 736A, 736B may be positioned horizontally normal to the longitudinal axis 790 or may be angled downwardly at an angle +β or may be angled upwardly at an angle −β to the longitudinal axis 790.
  • [0040]
    The expanding channel 734 comprises a channel which has an inner diameter which increases from an upper portion 737 to the lower portion 735 of the expanding channel 734 adjacent the bottom surface 760 of the chamber lid 732. Whether a gas is provided toward the walls of the expanding channel 734 or directly downward towards the substrate, the velocity of the gas flow decreases as the gas flow travels through the expanding channel 734 due to the expansion of the gas. The reduction of the velocity of the gas flow helps reduce the likelihood the gas flow will blow off reactants adsorbed on the surface of the substrate.
  • [0041]
    FIG. 7A is a top cross-sectional view of one embodiment of the expanding channel of the chamber lid of FIG. 7. Each gas conduit 750A, 750B may be positioned at an angle a from a center line of the gas conduit 750A, 750B and from a radius line from the center of the expanding channel 734. Entry of a gas through the gas conduit 750A, 750B preferably positioned at an angle a (i.e., when α>0) causes the gas to flow in a circular direction as shown by arrows. Providing gas at an angle a as opposed to directly straight-on to the walls of the expanding channel (i.e. when α=0) helps to provide a more laminar flow through the expanding channel 734 rather than a turbulent flow.
  • [0042]
    At least a portion of the bottom surface 760 of the chamber lid 732 may be tapered from the expanding channel 734 to a peripheral portion of the chamber lid 732 to help provide an improved velocity profile of a gas flow from the expanding channel 734 across the surface of the substrate (i.e., from the center of the substrate to the edge of the substrate). In one embodiment, the bottom surface 760 is tapered in the shape of a funnel. Not wishing to be bound by theory, in one aspect, the bottom surface 760 is downwardly sloping to help reduce the variation in the velocity of the gases as it travels between the bottom surface 760 of the chamber lid 732 and the substrate to help provide uniform exposure of the surface of the substrate to a reactant gas.
  • [0043]
    FIG. 8 is a schematic cross-section view of another embodiment of a gas distribution system 212D. The gas distribution system 212D is shown and described in U.S. patent application Ser. No. 10/118,664 (APPM/6422), which is incorporated by reference in its entirety to the extent not inconsistent with the present disclosure.
  • [0044]
    Gas distribution system 212 comprises a gas box 832, a top shower plate 860 positioned below the gas box 832, and a bottom shower plate 870 positioned below the top shower plate 860. The gas distribution system 830 is adapted to provide gas flows to the substrate. The gas box 832 comprises a central gas channel 837 and a plurality of outer gas channels 843. The central gas channel 837 provides one discrete path for the flow of one or more gases through the gas box 832 while the outer channels 843 provides another discrete path for the flow of one or more gases through the gas box 832. The central gas channel 837 is coupled to a first gas source through a first valve. The central gas channel 837 has a first gas outlet 838 and is adapted to deliver a first gas from the first gas source 835 to a gas conduit 810. The term “gas” as used herein is intended to mean a single gas or a gas mixture. The outer gas channels 843 are coupled to a second gas source through a second valve 842. The outer gas channels 843 have second gas outlets 844 and are adapted to deliver a second gas from the second gas source 841 to the top shower plate 860. Preferably, the second gas outlets 844 of the outer gas channels 843 are adapted to deliver the second gas proximate a central portion of the top shower plate.
  • [0045]
    The top shower plate 860 has a plurality of holes 862 to accommodate a gas flow therethrough from the outer gas channels 843 of the gas box 832 to the bottom shower plate 870. The gas conduit 810 is disposed through an aperture 863 in the top shower plate 860 and is disposed on the bottom shower plate 870.
  • [0046]
    The bottom shower plate 870 comprises a first piece 872 connected to a second piece 880. The first piece 872 has a plurality of holes 874 to provide a flow of a gas therethrough. The second piece 880 comprises a plurality of columns 882 having column holes 883 formed therethrough and a plurality of grooves 884 having groove holes 885 formed therethrough. The top surface of the columns 882 are connected to the bottom surface of the first piece 872 so that the column holes 883 align with the holes 874 of the first piece 872. Therefore, one discrete passageway is provided through the holes of the first piece 872 and through the column holes 883 of the columns 882 to deliver a gas flow from the top shower plate 860 to the substrate. An aperture 875 is formed through the first piece 872 and aligns with the grooves on the second piece 880. Therefore, another discrete passageway is provided through the aperture 875 of the first piece 872 and through the grooves 884 and groove holes 885 of the second piece 880 to deliver a gas flow from the gas conduit 810.
  • [0047]
    FIG. 9 is a schematic cross-sectional view of the top assembly 210 and the bottom assembly 240 of chamber 200 in a closed position. The top assembly 210 includes a gas distribution system 212, such as the gas distribution systems described in reference to FIGS. 5-8 or any other suitable gas distribution system. In one aspect, since the substrate support 242 is fixed, there is a smaller volume below the substrate support 242 since the volume does not have to take into account vertical movement of the substrate support 242. In another aspect, the chamber provides easy access underneath the substrate support 242. Therefore, the chamber may be cleaned without removing and realigning the substrate support 242.
  • [0048]
    In one aspect, reactant gases flow from the gas distribution system 212 to a processing zone defined between the substrate support 242 of the bottom assembly 240 and the gas distribution assembly 212 of the top assembly 210. In one embodiment, the spacing between the gas distribution assembly 212 and the substrate support 242 is about 0.75 inches or less to minimize the volume of the processing zone. The bottom purge gas flowing through the gap 284 between the substrate support 242 and the pumping ring 270 prevents the flow of process gases below the substrate support 242. A smaller amount of reactant gases and/or purge gases are required to be provided to the chamber 200 through the gas distribution assembly 212 since reactant gases/purge gases from the gas distribution assembly 212 do not fill the volume below the substrate support 242. For example, a smaller amount of reactant gases are required for a certain exposure of the substrate to the reactant gases. In addition, a smaller amount of purge gas is required to be provided through the gas distribution assembly 212 to remove the reactant gases from the chamber 200 since the purge gas does not need to remove reactant gases from the volume below the substrate support 242. Therefore, the throughput of the chamber 200 is greater and waste may be minimized due to the smaller amount of gases used. For example, the time duration of pulses of a compound may be reduced. In addition, the time duration required to purge the chamber of a compound may be reduced.
  • [0049]
    The chamber 200 as shown and described in reference to FIGS. 2-9 may be used to form any suitable material, such as aluminum oxide, other metal oxides, tantalum nitride, tantalum, tantalum silicon nitride, copper, copper aluminum, titanium nitride, titanium, titanium silicon nitride, tungsten nitride, tungsten, tungsten silicon nitride, organosilanes or organosiloxanes, other refractory metals, other refractory metal nitrides, other refractory metal compounds, other metals, other metal alloys, other high dielectric constant materials, other low dielectric constant materials, and other materials. The chamber 200 may be used to perform any suitable deposition technique, such as chemical vapor deposition, atomic layer deposition, cyclical layer deposition, and other suitable deposition techniques. Preferably, the chamber 200 is particularly advantageous in performing cyclical layer deposition. The term “cyclical layer deposition” as used herein refers to the sequential introduction of pulses of one or more compounds to deposit a thin layer of material on a substrate. Compounds can be reactants, reductants, precursors, catalysts, and mixtures thereof. Sequentially providing pulses of compounds may result in the formation of thin layers of material over a substrate structure. Each thin layer of material may be less than a monolayer, a monolayer, or more than a monolayer of material. The sequential introduction of pulses of compounds may be repeated to deposit a plurality of thin layers forming a conformal layer to a desired thickness. For simplicity and ease of description, however, a process for depositing an aluminum oxide film using chamber 200 is described in more detail below. In one embodiment, a method of depositing an aluminum oxide layer in chamber 200 over a substrate includes introducing an aluminum-containing compound, such as trimethyl aluminum, and an oxidizing compound through the gas distribution system 212. The aluminum containing compound and the oxidizing compound may be introduced as a cycle of pulses through the gas distribution system 212. A purge gas may be used to at least partially separate pulses of the aluminum containing compound and the oxidizing compound. In one embodiment, the pulses of the aluminum containing compound and the oxidizing compound are dosed into a continuous flow of a purge gas. In another embodiment, pulses of a purge gas are introduced through the gas distribution system 212. The process may further include one or more annealing sequences and/or oxidizing sequences performed at various times during the aluminum oxide deposition cycle. For example, an annealing step may be performed after every deposition cycle or after any number of cycles are performed. As an example, an annealing step may be performed every third cycle, every four cycle, etc. or at a midpoint during the deposition process.. Other deposition processes of aluminum oxide are also possible.
  • EXAMPLES
  • [0050]
    The following examples will now reveal additional details and features concerning embodiments of the processing chamber. The following examples should not be construed to limit the scope of the invention unless expressly set forth in the claims.
  • [0051]
    Simulations were conducted of the flow of gases in regards to chambers, such as a chamber described in reference to FIG. 2 and FIG. 4, having gas-flow diffusers of different heights. An uniform top flow of gases was provided to the substrate. Each chamber included a pumping ring having 24 apertures and a gas-flow diffuser extending between about 60% and about 70% around the perimeter of the substrate receiving surface 244. In Example 1, the gas-flow diffuser had a tapered height with a maximum height of about 0.8 inches. In Example 2, the gas-flow diffuser had a tapered height with a maximum height of about 0.7 inches. The simulations estimated the velocity of gases 0.1 inch above a substrate positioned on a substrate support of the chambers. The simulations of Example 1 and Example 2 showed that the flow of gases were substantially uniform across the surface of the substrate.
  • [0052]
    While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow. For example, many dimensions depend on the quantity of gas flow through the chamber.
Patent Citations
Cited PatentFiling datePublication dateApplicantTitle
US3649336 *Sep 27, 1968Mar 14, 1972Agfa Gevaert NvPlural coated sheet material
US3649339 *Sep 5, 1969Mar 14, 1972Smith Eugene CApparatus and method for securing a high vacuum for particle coating process
US4389973 *Dec 11, 1981Jun 28, 1983Oy Lohja AbApparatus for performing growth of compound thin films
US4729306 *Nov 19, 1986Mar 8, 1988American Screen Printing Equipment CompanyScreen seal system
US4834831 *Sep 4, 1987May 30, 1989Research Development Corporation Of JapanMethod for growing single crystal thin films of element semiconductor
US4993357 *Dec 21, 1988Feb 19, 1991Cs Halbleiter -Und Solartechnologie GmbhApparatus for atomic layer epitaxial growth
US5027746 *Mar 21, 1989Jul 2, 1991U.S. Philips CorporationEpitaxial reactor having a wall which is protected from deposits
US5225366 *Jun 22, 1990Jul 6, 1993The United States Of America As Represented By The Secretary Of The NavyApparatus for and a method of growing thin films of elemental semiconductors
US5281274 *Feb 4, 1993Jan 25, 1994The United States Of America As Represented By The Secretary Of The NavyAtomic layer epitaxy (ALE) apparatus for growing thin films of elemental semiconductors
US5294286 *Jan 12, 1993Mar 15, 1994Research Development Corporation Of JapanProcess for forming a thin film of silicon
US5383971 *Mar 11, 1992Jan 24, 1995Genus, Inc.Differential pressure CVD chuck
US5480818 *Feb 9, 1993Jan 2, 1996Fujitsu LimitedMethod for forming a film and method for manufacturing a thin film transistor
US5483919 *Aug 17, 1994Jan 16, 1996Nippon Telegraph And Telephone CorporationAtomic layer epitaxy method and apparatus
US5503875 *Mar 17, 1994Apr 2, 1996Tokyo Electron LimitedFilm forming method wherein a partial pressure of a reaction byproduct in a processing container is reduced temporarily
US5611865 *Feb 14, 1996Mar 18, 1997Applied Materials, Inc.Alignment of a shadow frame and large flat substrates on a heated support
US5711811 *Nov 28, 1995Jan 27, 1998Mikrokemia OyMethod and equipment for growing thin films
US5730802 *Dec 27, 1996Mar 24, 1998Sharp Kabushiki KaishaVapor growth apparatus and vapor growth method capable of growing good productivity
US5766365 *Jun 7, 1995Jun 16, 1998Applied Materials, Inc.Removable ring for controlling edge deposition in substrate processing apparatus
US5855680 *Nov 28, 1995Jan 5, 1999Neste OyApparatus for growing thin films
US5879459 *Aug 29, 1997Mar 9, 1999Genus, Inc.Vertically-stacked process reactor and cluster tool system for atomic layer deposition
US5916365 *Aug 16, 1996Jun 29, 1999Sherman; ArthurSequential chemical vapor deposition
US6015590 *Nov 28, 1995Jan 18, 2000Neste OyMethod for growing thin films
US6042652 *Sep 7, 1999Mar 28, 2000P.K. LtdAtomic layer deposition apparatus for depositing atomic layer on multiple substrates
US6071572 *Oct 15, 1996Jun 6, 2000Applied Materials, Inc.Forming tin thin films using remote activated specie generation
US6085690 *Sep 13, 1999Jul 11, 2000Anelva CorporationChemical vapor deposition apparatus
US6174377 *Jan 4, 1999Jan 16, 2001Genus, Inc.Processing chamber for atomic layer deposition processes
US6179920 *Sep 9, 1998Jan 30, 2001Mitsubishi Denki Kabushiki KaishaCVD apparatus for forming thin film having high dielectric constant
US6183563 *May 18, 1999Feb 6, 2001Ips Ltd.Apparatus for depositing thin films on semiconductor wafers
US6197683 *Sep 18, 1998Mar 6, 2001Samsung Electronics Co., Ltd.Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same
US6200893 *Mar 11, 1999Mar 13, 2001Genus, IncRadical-assisted sequential CVD
US6231672 *May 18, 1999May 15, 2001Ips Ltd.Apparatus for depositing thin films on semiconductor wafer by continuous gas injection
US6511539 *Sep 8, 1999Jan 28, 2003Asm America, Inc.Apparatus and method for growth of a thin film
US6551406 *Dec 27, 2000Apr 22, 2003Asm Microchemistry OyApparatus for growing thin films
US6572705 *Jan 14, 2000Jun 3, 2003Asm America, Inc.Method and apparatus for growing thin films
US6578287 *Apr 24, 2002Jun 17, 2003Asm America, Inc.Substrate cooling system and method
US6579372 *May 3, 2001Jun 17, 2003Ips, Ltd.Apparatus and method for depositing thin film on wafer using atomic layer deposition
US6593484 *Nov 9, 2001Jul 15, 2003Kabushikikaisha Kojundokagaku KenkyushoTantalum tertiary amylimido tris (dimethylamide), a process for producing the same, a solution of starting material for mocvd using the same, and a method of forming a tantalum nitride film using the same
US6716287 *Oct 18, 2002Apr 6, 2004Applied Materials Inc.Processing chamber with flow-restricting ring
US6718126 *Sep 14, 2001Apr 6, 2004Applied Materials, Inc.Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
US6734020 *Mar 7, 2001May 11, 2004Applied Materials, Inc.Valve control system for atomic layer deposition chamber
US6866746 *Nov 21, 2002Mar 15, 2005Applied Materials, Inc.Clamshell and small volume chamber with fixed substrate support
US6868859 *Jan 29, 2003Mar 22, 2005Applied Materials, Inc.Rotary gas valve for pulsing a gas
US20010000196 *Dec 7, 2000Apr 12, 2001Rexair, Inc.Filter for vacuum cleaner
US20010000866 *Nov 29, 2000May 10, 2001Ofer SnehApparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
US20010009140 *Jan 25, 2001Jul 26, 2001Niklas BondestamApparatus for fabrication of thin films
US20020000196 *May 3, 2001Jan 3, 2002Park Young-HoonReactor for depositing thin film on wafer
US20020007790 *May 3, 2001Jan 24, 2002Park Young-HoonAtomic layer deposition (ALD) thin film deposition equipment having cleaning apparatus and cleaning method
US20020009544 *Aug 20, 1999Jan 24, 2002Mcfeely F. ReadDelivery systems for gases for gases via the sublimation of solid precursors
US20020009896 *Sep 24, 2001Jan 24, 2002Sandhu Gurtej S.Chemical vapor deposition using organometallic precursors
US20020017242 *May 24, 2001Feb 14, 2002Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)Inner tube for CVD apparatus
US20020041931 *May 14, 2001Apr 11, 2002Tuomo SuntolaMethod for growing thin films
US20020052097 *May 3, 2001May 2, 2002Park Young-HoonApparatus and method for depositing thin film on wafer using atomic layer deposition
US20020066411 *May 10, 2001Jun 6, 2002Chiang Tony P.Method and apparatus for improved temperature control in atomic layer deposition
US20020073924 *Oct 24, 2001Jun 20, 2002Chiang Tony P.Gas introduction system for a reactor
US20020076481 *Oct 24, 2001Jun 20, 2002Chiang Tony P.Chamber pressure state-based control for a reactor
US20020076507 *Oct 24, 2001Jun 20, 2002Chiang Tony P.Process sequence for atomic layer deposition
US20020076508 *Dec 19, 2001Jun 20, 2002Chiang Tony P.Varying conductance out of a process region to control gas flux in an ALD reactor
US20020086106 *Nov 7, 2001Jul 4, 2002Park Chang-SooApparatus and method for thin film deposition
US20020092471 *Jan 16, 2002Jul 18, 2002Samsung Electronics Co., Ltd.Semiconductor deposition apparatus and shower head
US20020094689 *Mar 7, 2002Jul 18, 2002Park Young-HoonApparatus and method for depositing thin film on wafer using atomic layer deposition
US20030004723 *Jan 29, 2002Jan 2, 2003Keiichi ChiharaMethod of controlling high-speed reading in a text-to-speech conversion system
US20030010451 *Dec 12, 2001Jan 16, 2003Applied Materials, Inc.Lid assembly for a processing system to facilitate sequential deposition techniques
US20030017697 *Jul 17, 2002Jan 23, 2003Kyung-In ChoiMethods of forming metal layers using metallic precursors
US20030022338 *Apr 19, 2002Jan 30, 2003Human Genome Sciences, Inc.Kunitz-type protease inhibitor polynucleotides, polypeptides, and antibodies
US20030042630 *Sep 5, 2001Mar 6, 2003Babcoke Jason E.Bubbler for gas delivery
US20030053799 *Sep 14, 2001Mar 20, 2003Lei Lawrence C.Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
US20030057527 *Sep 26, 2001Mar 27, 2003Applied Materials, Inc.Integration of barrier layer and seed layer
US20030072913 *Oct 10, 2002Apr 17, 2003Kuang-Chun ChouSubstrate strip with sides having flanges and recesses
US20030075273 *Aug 14, 2002Apr 24, 2003Olli KilpelaAtomic layer deposition reactor
US20030075925 *Jun 28, 2002Apr 24, 2003Sven LindforsSource chemical container assembly
US20030079686 *Dec 21, 2001May 1, 2003Ling ChenGas delivery apparatus and method for atomic layer deposition
US20030089308 *Dec 10, 2002May 15, 2003Ivo RaaijmakersApparatus and method for growth of a thin film
US20030101927 *Dec 10, 2002Jun 5, 2003Ivo RaaijmakersApparatus and method for growth of a thin film
US20030101938 *Sep 20, 2002Jun 5, 2003Applied Materials, Inc.Apparatus for the deposition of high dielectric constant films
US20030106490 *Aug 7, 2002Jun 12, 2003Applied Materials, Inc.Apparatus and method for fast-cycle atomic layer deposition
US20030113187 *Dec 14, 2001Jun 19, 2003Applied Materials, Inc.Dual robot processing system
US20030116087 *Dec 21, 2001Jun 26, 2003Nguyen Anh N.Chamber hardware design for titanium nitride atomic layer deposition
US20030121469 *Oct 11, 2002Jul 3, 2003Sven LindforsMethod and apparatus of growing a thin film
US20030121608 *Oct 25, 2002Jul 3, 2003Applied Materials, Inc.Gas delivery apparatus for atomic layer deposition
US20030132319 *Jan 15, 2002Jul 17, 2003Hytros Mark M.Showerhead assembly for a processing chamber
US20030140854 *Feb 13, 2003Jul 31, 2003Vaino KilpiApparatus for growing thin films
US20030143328 *Jul 16, 2002Jul 31, 2003Applied Materials, Inc.Apparatus and method for plasma assisted deposition
US20030143747 *Jan 30, 2002Jul 31, 2003Niklas BondestamActive pulse monitoring in a chemical reactor
US20040005749 *Apr 29, 2003Jan 8, 2004Choi Gil-HeyunMethods of forming dual gate semiconductor devices having a metal nitride layer
US20040011404 *Jul 19, 2002Jan 22, 2004Ku Vincent WValve design and configuration for fast delivery system
US20040011504 *Jul 17, 2002Jan 22, 2004Ku Vincent W.Method and apparatus for gas temperature control in a semiconductor processing system
US20040013577 *Jul 17, 2002Jan 22, 2004Seshadri GanguliMethod and apparatus for providing gas to a processing chamber
US20040014320 *May 27, 2003Jan 22, 2004Applied Materials, Inc.Method and apparatus of generating PDMAT precursor
US20040015300 *Jul 22, 2002Jan 22, 2004Seshadri GanguliMethod and apparatus for monitoring solid precursor delivery
US20040016404 *Jul 23, 2002Jan 29, 2004John GreggVaporizer delivery ampoule
US20040025370 *Jul 29, 2002Feb 12, 2004Applied Materials, Inc.Method and apparatus for generating gas to a processing chamber
US20040065255 *Jan 31, 2003Apr 8, 2004Applied Materials, Inc.Cyclical layer deposition system
US20040069227 *Oct 9, 2002Apr 15, 2004Applied Materials, Inc.Processing chamber configured for uniform gas flow
US20040071897 *Oct 11, 2002Apr 15, 2004Applied Materials, Inc.Activated species generator for rapid cycle deposition processes
US20040144308 *Jan 29, 2003Jul 29, 2004Applied Materials, Inc.Membrane gas valve for pulsing a gas
US20050006799 *Jun 1, 2004Jan 13, 2005Gregg John N.Method and apparatus to help promote contact of gas with vaporized material
US20050059240 *May 28, 2004Mar 17, 2005Kyung-In ChoiMethod for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same
US20050095859 *Nov 3, 2003May 5, 2005Applied Materials, Inc.Precursor delivery system with rate control
US20050104142 *Nov 13, 2003May 19, 2005Vijav NarayananCVD tantalum compounds for FET get electrodes
Referenced by
Citing PatentFiling datePublication dateApplicantTitle
US7579044Nov 7, 2005Aug 25, 2009Brewer Science Inc.Process and device for coating the outer edge of a substrate during microelectronics manufacture
US7682946Nov 6, 2006Mar 23, 2010Applied Materials, Inc.Apparatus and process for plasma-enhanced atomic layer deposition
US7699023Oct 26, 2007Apr 20, 2010Applied Materials, Inc.Gas delivery apparatus for atomic layer deposition
US7780788Mar 11, 2005Aug 24, 2010Applied Materials, Inc.Gas delivery apparatus for atomic layer deposition
US7780789Oct 24, 2007Aug 24, 2010Applied Materials, Inc.Vortex chamber lids for atomic layer deposition
US7781326Sep 30, 2005Aug 24, 2010Applied Materials, Inc.Formation of a tantalum-nitride layer
US7794544Oct 26, 2007Sep 14, 2010Applied Materials, Inc.Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US7798096May 5, 2006Sep 21, 2010Applied Materials, Inc.Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
US7850779Nov 6, 2006Dec 14, 2010Applied Materisals, Inc.Apparatus and process for plasma-enhanced atomic layer deposition
US7867896Apr 2, 2009Jan 11, 2011Applied Materials, Inc.Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US7892602Jun 7, 2006Feb 22, 2011Applied Materials, Inc.Cyclical deposition of refractory metal silicon nitride
US8114789Jul 29, 2010Feb 14, 2012Applied Materials, Inc.Formation of a tantalum-nitride layer
US8152926 *Oct 14, 2009Apr 10, 2012Advanced Display Process Engineering Co. Ltd.Vacuum processing apparatus
US8187384Oct 14, 2009May 29, 2012Advanced Display Process Engineering Co. Ltd.Vacuum processing apparatus
US8282992Oct 26, 2007Oct 9, 2012Applied Materials, Inc.Methods for atomic layer deposition of hafnium-containing high-K dielectric materials
US8291857 *Jun 30, 2009Oct 23, 2012Applied Materials, Inc.Apparatuses and methods for atomic layer deposition
US8293015 *Sep 14, 2011Oct 23, 2012Applied Materials, Inc.Apparatuses and methods for atomic layer deposition
US8293328Sep 7, 2006Oct 23, 2012Applied Materials, Inc.Enhanced copper growth with ultrathin barrier layer for high performance interconnects
US8318266Sep 7, 2006Nov 27, 2012Applied Materials, Inc.Enhanced copper growth with ultrathin barrier layer for high performance interconnects
US8343279May 12, 2005Jan 1, 2013Applied Materials, Inc.Apparatuses for atomic layer deposition
US8349082Oct 14, 2009Jan 8, 2013Advanced Display Process Engineering Co., Ltd.Vacuum processing apparatus
US8408222Jul 20, 2009Apr 2, 2013Brewer Science Inc.Device for coating the outer edge of a substrate during microelectronics manufacturing
US8668776Jun 10, 2010Mar 11, 2014Applied Materials, Inc.Gas delivery apparatus and method for atomic layer deposition
US8747556 *Sep 14, 2012Jun 10, 2014Applied Materials, Inc.Apparatuses and methods for atomic layer deposition
US8821637Jan 29, 2008Sep 2, 2014Applied Materials, Inc.Temperature controlled lid assembly for tungsten nitride deposition
US8826857 *Dec 9, 2011Sep 9, 2014Lam Research CorporationPlasma processing assemblies including hinge assemblies
US9012334Feb 14, 2012Apr 21, 2015Applied Materials, Inc.Formation of a tantalum-nitride layer
US9017776Sep 24, 2012Apr 28, 2015Applied Materials, Inc.Apparatuses and methods for atomic layer deposition
US9032906Oct 16, 2007May 19, 2015Applied Materials, Inc.Apparatus and process for plasma-enhanced atomic layer deposition
US9175394 *Mar 8, 2011Nov 3, 2015Applied Materials, Inc.Atomic layer deposition chamber with multi inject
US20060115578 *Nov 7, 2005Jun 1, 2006Brand Gary JDevice for coating the outer edge of a substrate during microelectronics manufacturing
US20070003698 *Sep 7, 2006Jan 4, 2007Ling ChenEnhanced copper growth with ultrathin barrier layer for high performance interconnects
US20070026147 *Sep 7, 2006Feb 1, 2007Ling ChenEnhanced copper growth with ultrathin barrier layer for high performance interconnects
US20070117414 *Oct 3, 2006May 24, 2007Stephen MoffattMethods and apparatus for epitaxial film formation
US20080038463 *Oct 17, 2007Feb 14, 2008Applied Materials, Inc.Atomic layer deposition process
US20080041313 *Oct 26, 2007Feb 21, 2008Ling ChenGas delivery apparatus for atomic layer deposition
US20080072821 *Jul 20, 2007Mar 27, 2008Dalton Jeremic JSmall volume symmetric flow single wafer ald apparatus
US20080102203 *Oct 24, 2007May 1, 2008Dien-Yeh WuVortex chamber lids for atomic layer deposition
US20080107809 *Oct 24, 2007May 8, 2008Dien-Yeh WuVortex chamber lids for atomic layer deposition
US20100003406 *Jun 30, 2009Jan 7, 2010Applied Materials, Inc.Apparatuses and methods for atomic layer deposition
US20100012024 *Jan 21, 2010Brand Gary JDevice for coating the outer edge of a substrate during microelectronics manufacturing
US20100012036 *Jul 13, 2009Jan 21, 2010Hugo SilvaIsolation for multi-single-wafer processing apparatus
US20100086381 *Oct 14, 2009Apr 8, 2010Advanced Display Process Engineering Co., Ltd.Vacuum processing apparatus
US20100086382 *Apr 8, 2010Advanced Display Process Engineering Co., LtdVacuum processing apparatus
US20100089531 *Oct 14, 2009Apr 15, 2010Advanced Display Process Engineering, Co., Ltd.Vacuum processing apparatus
US20100294199 *Apr 20, 2010Nov 25, 2010Applied Materials, Inc.Cvd apparatus for improved film thickness non-uniformity and particle performance
US20110223334 *Sep 15, 2011Applied Materials, Inc.Atomic layer deposition chamber with multi inject
US20120000422 *Jan 5, 2012Applied Materials, Inc.Apparatuses and methods for atomic layer deposition
US20120070581 *Nov 27, 2011Mar 22, 2012Cambridge Nano Tech Inc.Vapor deposition systems and methods
US20130008984 *Jan 10, 2013Applied Materials, Inc.Apparatuses and methods for atomic layer deposition
US20130126092 *Dec 9, 2011May 23, 2013Lam Research CorporationPlasma Processing Assemblies Including Hinge Assemblies
WO2007076195A2 *Nov 22, 2006Jul 5, 2007Jeremie J DaltonSmall volume symmetric flow single wafer ald apparatus
Classifications
U.S. Classification118/715, 156/345.34
International ClassificationH01L21/00, C23C16/44, C23C16/455
Cooperative ClassificationC23C16/45565, C23C16/4412, C23C16/45521, H01L21/6719, C23C16/45574
European ClassificationH01L21/67S2Z6, C23C16/455E2, C23C16/455K2, C23C16/455K10, C23C16/44H
Legal Events
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Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LEI, LAWRENCE C.;MAK, ALFRED W.;TZU, GWO-CHUAN;AND OTHERS;REEL/FRAME:016310/0850;SIGNING DATES FROM 20030430 TO 20030519