|Publication number||US20050189480 A1|
|Application number||US 11/028,074|
|Publication date||Sep 1, 2005|
|Filing date||Jan 3, 2005|
|Priority date||Jan 2, 2004|
|Also published as||US7176450|
|Publication number||028074, 11028074, US 2005/0189480 A1, US 2005/189480 A1, US 20050189480 A1, US 20050189480A1, US 2005189480 A1, US 2005189480A1, US-A1-20050189480, US-A1-2005189480, US2005/0189480A1, US2005/189480A1, US20050189480 A1, US20050189480A1, US2005189480 A1, US2005189480A1|
|Original Assignee||Hollingsworth Russell E.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (8), Referenced by (4), Classifications (16), Legal Events (3)|
|External Links: USPTO, USPTO Assignment, Espacenet|
This application claims the benefit of priority to U.S. Provisional Patent Application Nos. 60/534,027, filed 2 Jan. 2004, and 60/550,618, filed Mar. 4, 2004; both of these applications are incorporated herein by reference.
Near-field scanning optical microscopes (“NSOMs”) operate by scanning an optical probe (“probe”) over a sample. Depending on the mode of operation of an NSOM, the probe may illuminate or collect light, or both. The probe passes light through an aperture smaller than the wavelength of the light. The probe and/or sample are scanned such that the aperture passes over the area to be imaged. An image so constructed occurs on a line-by-line or point-by-point basis. Typical NSOMs use piezoelectric transducers to perform the scanning motions. The spatial resolution achievable by an NSOM is not limited by the wavelength of the light, as in standard microscopy, but rather by the dimension of the aperture through which the light passes (i.e., a smaller aperture produces a higher resolution image) and by the spacing of the points or lines that make up the image.
An NSOM may also act as a light source to produce subwavelength images in photoresist. A substrate is coated with photoresist and placed on an NSOM stage. The NSOM probe and/or the substrate are scanned to move the probe's aperture over an area of photoresist to be imaged, to expose the photoresist line-by-line or point-by-point. Photoresist image resolution depends upon the dimension of the aperture and on the spacing of the points or lines during scan.
Existing electron beam tools for direct writing exposure of photoresist on a substrate expose the substrate to vacuum conditions and high energy electrons. Imaging of surface features (i.e., alignment features) in electron beam tools also unavoidably exposes photoresist over such features. Images produced by existing conventional lithography tools such as mask projection or contact aligners expose entire regions simultaneously through photomasks. The images produced by conventional lithography tools are also subject to the effects of diffraction.
A near-field scanning optical microscope system exposes photoresist on a substrate. The system includes an NSOM probe, and translational stages capable of moving one of the probe and the substrate such that the probe traverses, in continuous motion, over the entire substrate. Another near-field scanning optical microscope system exposes photoresist on a substrate using an array of NSOM probes. Methods for exposing photoresist on a substrate include the steps of translating a surface of the substrate across an NSOM probe (or an array of NSOM probes) in continuous motion.
Light entering stage photodiode 88 generates an electrical current that is sent into stage photodiode output line 110; the electrical current is proportional to the intensity of the light. Stage photodiode 88 thus enables calibration of light intensity emitted from optical probe 74, and enables transmission imaging of small samples. Collection optics 120 operate to collect light from substrate 82 and to focus the collected light into main photodiode 122, which in turn connects with main photodiode output line 124.
NSOM lithography system 5 may operate as an imaging tool, a photoresist exposure tool, or both. When NSOM lithography system 5 operates as an imaging tool, control computer 10 (as configured by software 20) sends a signal through tuning fork control line 104(a) to tuning fork assembly 70, causing tuning fork assembly 70 to dither optical probe 74 in the Y direction (i.e., in the direction of arrow 84 of
Control computer 10 moves substrate 82 in a raster scan under optical probe 74 by generating and sending signals through stage control lines 102(a, b, c) to stages 62, 64, and 86, respectively. The distance traveled by substrate 82, from one point to the next in the raster scan, is less than the wavelength of light emitted through optical probe 74. Simultaneously, control computer 10 enables and/or controls (1) the determination and adjustment of probe-to-substrate separation, (2) light emission through optical probe 74, (3) collection of light by main photodiode 122 or stage photodiode 88, and (4) conversion of the electrical current signal from main photodiode output line 124 or stage photodiode output line 110 to the digital data. By building a database wherein the digital data is associated with the position of substrate 82 at each point of the raster scan, control computer 10 builds an image of substrate 82. The resolution of the image is not limited by the wavelength of light, but by the distance between measurement points, and by the size of the aperture in optical probe 74.
The image produced by NSOM lithography system 5 may be used, for example, to generate NSOM image data identifying the location of NSOM optical probe 74 with respect to features on substrate 82 (given the known positions of X and Y translation stages 64 and 62, and rotational stage 86). The NSOM image data may then be used to implement software corrections, allowing NSOM optical probe 74 to align to features on substrate 82 with high precision.
When NSOM lithography system 5 operates as a lithography exposure tool, UV light emitted through optical probe 74 exposes photoresist on substrate 82.
Step 332 performs vector or raster scan exposure of the photoresist. A computer (e.g., control computer 10) reduces pattern information from a pattern database to a series of lines to be exposed in the photoresist. In vector scan exposure, the lines to be exposed are referred to as vectors, and may point in any direction over the surface being imaged (i.e., when substrate 82 is an X-Y plane, any vector may have both X and Y components). Vector scan exposure is thus analogous to the operation of a pen type plotter. In raster scan exposure, the lines to be exposed are in either the X or Y direction, and the substrate being exposed is scanned past a writing tool in one of the X or Y directions before its position is incremented in the other of the X or Y directions. Raster scan exposure is thus analogous to the operation of an ink jet type printer (using a single ink jet).
In either of vector or raster scanning, the photoresist is selectively exposed through the NSOM probe. Control computer 10 coordinates operation of an electromechanical shutter (e.g., shutter 38 of
The high precision and long travel of X translation stage 64 and Y translation stage 62, combined with the other features of NSOM lithography tool 5, may provide advantages relative to existing direct write lithography tools. For example, tools which employ piezo members for fine positioning of substrates have a motion range of tens of microns. Larger motions involve a combination of coarse motions (provided by, for example, translation stages) and fine motions provided by the piezo members. This can lead to “stitching errors” in which large individual shapes include gaps due to a calibration mismatch between the fine and coarse movements. The use of Y and X translation stages 62 and 64 (as shown in
An advantage of NSOM lithography tool 5 relative to conventional (i.e., mask based, projection or contact) lithography tools is the ability to control the dimensions of individual exposed features by varying the scan speed during exposure. For example, when a mask based lithography tool of the prior art is used to expose photoresist, it is common practice to vary the exposure time to control the dimensions of exposed features. When positive photoresist is used, a longer exposure results in slightly wider exposed areas. However, the simultaneous exposure of all the mask features causes the dimensions of all the exposed areas to vary according to the exposure. When an application requires changes to specific dimensions within a layer (leaving other dimensions unchanged), implementing the changes requires generation of a new design database and generation of a new photomask from the new design database. Generating a photomask costs from several hundred dollars up to about three thousand dollars, and can take days or weeks. By contrast, when NSOM lithography tool 5 is used, the exposure scan speed may be varied (by control computer 10, under the control of software 20) on a feature by feature basis, with slower scan speed resulting in wider exposed areas (in positive photoresist). Thus, once a new design database is generated, the change can be tested immediately, resulting in savings of both money and time compared to the prior art.
Other advantages of NSOM lithography tool 5, relative to existing direct write lithography tools, may include the ability to image substrate features for alignment purposes, without exposing photoresist, and to avoid certain conditions that may cause substrate damage. Prior art electron beam tools cannot selectively generate an image of a substrate for alignment purposes without exposing photoresist in the imaged areas. Fiber optic subsystem 30 of NSOM lithography tool 5 is a light source that alternates between the use of red light (which does not expose photoresist) for generating data for alignment and registration purposes, and UV light for photoresist exposure. Electron beam tools also require the substrate to be subjected to a vacuum, and exposure of the substrate to beams of electrons with energy on the order of one thousand to one hundred thousand electron volts. Either of these conditions may cause damage to certain types of substrates. NSOM lithography tool 5 exposes the substrate only to atmospheric conditions and relatively low energy photons.
In another embodiment of an NSOM lithography tool as described herein, an array of optical probes is used to simulataneously expose photoresist at multiple points on a substrate. A single probe in a probe array may be coupled alternately to red light and UV light sources to facilitate imaging for alignment and registration. Alternatively, a single probe (i.e., a probe that is not part of an array) may be coupled alternately to red light and UV light sources to facilitate imaging for alignment and registration; offsets may be implemented in software to correct for the difference in position between the single probe and the probes of a probe array.
In another exemplary use of an NSOM lithography tool as described herein, coarse features may be patterned on a substrate using a conventional lithography tool, and fine features may be written using NSOM lithography. In one embodiment, a substrate (e.g., substrate 82) may be coated with photoresist and exposed using a conventional lithography tool. The photoresist is developed to fix a first image, after which the substrate is placed on a substrate holder (e.g., substrate holder 80). In this example, the NSOM lithography tool may align either to the developed photoresist image, or to features created on the substrate by previous process steps. After exposure in the NSOM lithography tool, the photoresist is developed again to fix a second image.
In another embodiment, a substrate (e.g., substrate 82) is coated with photoresist, and a first image is exposed using a conventional lithography tool. Subsequently, the substrate is placed on a substrate holder (e.g., substrate holder 80) without development of the photoresist. A latent photoresist image is generally present after photoresist is exposed but before it is developed. The NSOM lithography tool may align either to a latent photoresist image, or to features created on the substrate by previous process steps. After exposure of a second image by the NSOM lithography tool, the photoresist is developed to fix the first and second images simultaneously.
Changes may be made in the above methods and systems without departing from the scope hereof. It should thus be noted that the matter contained in the above description or shown in the accompanying drawings should be interpreted as illustrative and not in a limiting sense. The following claims are intended to cover all generic and specific features described herein, as well as all statements of the scope of the present method and system, which, as a matter of language, might be said to fall there between.
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|International Classification||H01J3/14, G01Q20/02, G01Q10/00, G01Q60/18, G01Q10/04, G01Q60/22|
|Cooperative Classification||B82Y20/00, G01Q10/04, G01Q60/22|
|European Classification||B82Y20/00, B82Y15/00, G01Q10/04, G01Q60/18, G01Q60/22, G01Q10/00|
|May 9, 2005||AS||Assignment|
Owner name: ITN ENERGY SYSTEMS, INC., COLORADO
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HOLLINGSWORTH, RUSSELL E.;REEL/FRAME:016552/0114
Effective date: 20050429
|Jul 14, 2010||FPAY||Fee payment|
Year of fee payment: 4
|Jun 9, 2014||FPAY||Fee payment|
Year of fee payment: 8