US 20050221722 A1
Methods for semiconductor wafer grinding using an adhesive gel material are described herein.
1. A method, comprising:
applying an adhesive gel material to at least a portion of a first side of a semiconductor wafer having first and second sides;
positioning the semiconductor wafer on to a platform with the first side facing the platform and with the adhesive gel material between the first side and the platform to allow the adhesive gel material to hold the semiconductor wafer to the platform;
grinding the second side of the semiconductor wafer; and
allowing the adhesive gel material to release the semiconductor wafer from the platform.
2. The method of
3. The method of
4. The method of
5. The method of
6. The method of
7. The method of
washing the semiconductor wafer;
mounting the semiconductor wafer; and
dicing the semiconductor wafer.
8. The method of
9. The method of
10. The method of
11. The method of
12. The method of
13. The method of
14. The method of
15. The method of
16. A method, comprising:
applying a gel material to a first side of a semiconductor wafer, having first and second sides, to provide substantial surface contact between the gel material and surface structures on the first side;
placing the wafer on a vacuum chuck with the gel material between the wafer and the vacuum chuck;
grinding the second side while using the gel material to hold the wafer against the vacuum chuck; and
removing the wafer from the vacuum chuck by reducing surface contact between the gel material and the surface structures.
17. The method of
18. The method of
19. The method of
20. The method of
21. The method of
22. The method of
23. The method of
washing the wafer;
mounting the wafer; and
dicing the wafer.
24. The method of
25. The method of
26. The method of
27. The method of
28. A material, comprising:
an adhesive gel material;
semi-solid particles within the adhesive gel material; and
wherein the adhesive gel material forms a membrane surface to hold a first side of a semiconductor wafer to a surface of a vacuum chuck during wafer grinding of a second side of the semiconductor wafer.
29. The material of
30. The material of
The present disclosure is related to the field of semiconductor device manufacturing and packaging. More specifically but not exclusively, the present disclosure is related to semiconductor wafer grinding using an adhesive gel material.
Semiconductor wafers are usually thinned prior to the assembly of individual semiconductor devices. Such thinning is often accomplished by wafer grinding or “backgrinding” since it is usually done by mechanically grinding a lower surface (i.e., back) of a wafer. A conventional method of protection is the application of a “backgrind” tape or grinding protection tape over an active or upper surface of the wafer to protect integrated circuits or other surface structures on the wafer during grinding. Among the disadvantages of using such tape is that tape selection for various wafer types (for example, wire bond, flip chip and alternative bumped method wafer types) can be time-consuming and complicated. Furthermore, wafer taping and de-taping adds expense and processing time to wafer packaging and may damage a wafer surface by leaving behind adhesive residue and damaged or missing wafer bumps when the tape is removed.
The present invention will be described by way of exemplary embodiments, but not limitations, illustrated in the accompanying drawings in which like references denote similar elements, and in which:
Embodiments of the present invention include, but are not limited to, methods for semiconductor wafer grinding using an adhesive gel material.
Various aspects of the illustrative embodiments will be described using terms commonly employed by those skilled in the art to convey the substance of their work to others skilled in the art. However, it will be apparent to those skilled in the art that the present invention may be practiced with only some of the described aspects. For purposes of explanation, specific numbers, materials and configurations are set forth in order to provide a thorough understanding of the illustrative embodiments. However, it will be apparent to one skilled in the art that embodiments of the present invention may be practiced without the specific details. In other instances, well-known features are omitted or simplified in order not to obscure the illustrative embodiments.
Various operations will be described as multiple discrete operations, in turn, in a manner that is most helpful in understanding the present invention, however, the order of description should not be construed as to imply that these operations are necessarily order dependent. In particular, these operations need not be performed in the order of presentation.
The phrase “in one embodiment” is used repeatedly. The phrase generally does not refer to the same embodiment, however, it may. The terms “comprising”, “having” and “including” are synonymous, unless the context dictates otherwise.
Embodiments of a method for semiconductor wafer grinding using an adhesive gel material are described herein. For simplicity and clarity of explanation, various embodiments of the invention are shown in the figures according to various views. It is to be appreciated that such views are merely illustrative and are not necessarily drawn to scale or to the exact shape. Furthermore, it is to be appreciated that the actual devices utilizing principles of the invention may vary in shape, size, configuration, contour, and the like, other than what is shown in the figures, due to different manufacturing processes, equipment, design tolerances, or other practical considerations that result in variations from one semiconductor device to another.
After the grinding process, grinding protection tape 102 may be removed or de-taped from upper surface 105 of wafer 104. Wafer 104 may then be mounted with a wafer mount tape 112 applied to lower surface 109 of wafer 104. Wafer 104 may then be singulated or diced at 116 into separate integrated circuit die or a plurality of integrated circuit die.
Another variation of the above prior art process can be used.
In various embodiments, upper surface 105 of wafer 104 may include surface structures including electronic circuitry and related devices. Because gel material 404 may be of a semi-solid or semi-fluid nature, gel material 404 may be able to fill in one or more recesses or depressions of wafer 104, therefore increasing surface area contact while increasing adhesion and cushioning properties. Platform 114 may include a vacuum in the embodiment and is turned off in
Thus, it can be seen from the above descriptions, one or more novel methods for semiconductor wafer grinding without the use of grinding protection tape have been described. While the present invention has been described in terms of the foregoing embodiments, those skilled in the art will recognize that the invention is not limited to the embodiments described. The present invention can be practiced with modification and alteration within the spirit and scope of the appended claims.
Thus, the description is to be regarded as illustrative instead of restrictive on the present invention.