|Publication number||US20050225308 A1|
|Application number||US 10/814,883|
|Publication date||Oct 13, 2005|
|Filing date||Mar 31, 2004|
|Priority date||Mar 31, 2004|
|Also published as||US7567072, US7655945, US20080067999, US20090206820|
|Publication number||10814883, 814883, US 2005/0225308 A1, US 2005/225308 A1, US 20050225308 A1, US 20050225308A1, US 2005225308 A1, US 2005225308A1, US-A1-20050225308, US-A1-2005225308, US2005/0225308A1, US2005/225308A1, US20050225308 A1, US20050225308A1, US2005225308 A1, US2005225308A1|
|Original Assignee||Orvek Kevin J|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (11), Referenced by (2), Classifications (9)|
|External Links: USPTO, USPTO Assignment, Espacenet|
This invention relates to real-time monitoring of particles in a semiconductor vacuum environment.
A microprocessor is an integrated circuit (IC) built on a tiny piece of silicon. A microprocessor contains millions of transistors interconnected through fine wires made of aluminum or copper.
Microprocessor fabrication is a complex process involving many steps. Microprocessors are typically built by layering materials on top of thin rounds of silicon, called wafers, through various processes using chemicals, gases and light. In chip making, very thin layers of material, in carefully designed patterns, are put on the blank silicon wafers. The patterns are computerized designs that are miniaturized so that up to several hundred microprocessors can be put on a single wafer.
Because the patterns are so small, it is nearly impossible to deposit material exactly where it needs to be on the wafer. Instead, a layer of material is deposited or grown across an entire wafer surface. Then, the material that is not needed is removed and only the desired pattern remains.
The microprocessor fabrication process begins with “growing” an insulting layer of silicon dioxide on top of a polished wafer in a high temperature furnace. Photolithography, a process in which circuit patterns are printed on the wafer surface, is next. A temporary layer of a light sensitive material called a “photoresist” is applied to the wafer. Ultraviolet light shines through clear spaces of a stencil called a “photomask” or “mask” to expose selected areas of the photoresist. Masks are generated during a design phase and are used to define a circuit pattern on each layer of a chip. Exposure to light chemically changes the uncovered portions of the photoresist. The machine used to do this is typically called a “scanner” because it scans one die or a few die at a time, then steps to the next die or set of die until it has exposed the entire wafer.
An active area of the mask is exposed to a vacuum environment of a scanner and is at high risk of accumulating particles. If a particle lands in a critical part of the active area then it will lead to a printed defect on the wafer. This defect causes decreased yields, or increased wafer cost in rework if the defect is fortuitously caught prior to further wafer processing by wafer defect metrology.
Like reference symbols in the various drawings indicate like elements.
The systems and techniques described here relate to real-time monitoring of particles in vacuum environments of semiconductor processing equipment. For ease of discussion, a photolithography process of a semiconductor fabrication is used as an example for describing the real-time monitoring of particles in vacuum chambers of semiconductor processing equipment. However, the systems and techniques described herein are not limited to photolithography; rather, they can be used in any semiconductor vacuum process environment in which a real-time monitoring of particles is needed, such as while depositing a film on a semiconductor wafer or implanting a dopant on a semiconductor wafer.
A semiconductor manufacturing process hinges on a use of a photographic process to generate fine featured patterns of an integrated circuit (IC). Each layer of a chip is defined by a specific mask. A mask is somewhat like a photographic negative, which is made by patterning a film of chromium on a pure quartz glass plate. The finished plates are referred to as reticles. Reticles are manufactured by sophisticated and expensive pattern generation equipment, which is driven from a chip design database. The patterns are formed on the chromium plated quartz by removing the chromium with either laser or electron-beam driven tools.
The illuminator enclosure 14 includes laser optics that, for example, generate EUV light from a plasma generated when a laser illuminates a jet of xenon gas. The light is collected and focused on a mask 22 residing on a mask stage 24 in the mask-stage chamber 16 by a series of condenser mirrors 26 a, 26 b, 26 c, 26 d. A mask image is projected onto the wafer 12 by a reduction camera 28 a, 28 b, 28 c, 28 d, while the mask 22 and wafer 12 are simultaneously scanned. The entire operation takes place in high-vacuum environmental chambers and is controlled by a computer system 29.
Impurities 32, such as metallic and/or non-metallic particles, can be present in the mask-stage chamber 16. If one of the particles 32 lands on a critical part of an active area of the mask 22 it will lead to a printed defect on the wafer 12. This defect causes decreased yields, or increased wafer cost in rework if the defect is detected at an early stage. The present invention provides a real-time detection of the presence of particles in the vicinity of the mask 22 that would warrant stoppage of the lithography system 10. In an extreme-ultraviolet (EUV) lithography environment, particle sizes that are estimated to be of concern are on the order of 50 nanometers (nm).
As shown in
As shown in
A number of these devices 31 can be located in the semiconductor device 30 providing determination of particle density counts. Devices 31 sensitive to various particle sizes, e.g., by varying the pitch of the pairs of lines, can also be incorporated into the active semiconductor component 30 to monitor a range of particle sizes through a region or regions of interest.
In a particular embodiment, each active semiconductor component 30 is protected by a remote-controlled removable cover (not shown) until the component 30 is ready to be exposed to a vacuum environment. The cover is remotely triggered by the computer system 29 or other triggering mechanism (not shown) to open when desired, exposing the device 31 to the vacuum environment.
As shown in
Process 100 applies (104) a voltage to the pair of conductive lines and detects (106) a change in an electrical property of the conductive lines resulting from a particle landing on or between the pair of conductive lines. A metallic particle having a diameter the size of the pitch between the lines, or larger, generates a short in a current flow between the lines. A non-metallic particle having a diameter the size of the pitch between the lines, or larger, generates a change in capacitance between the lines. The short and/or change in capacitance is detected by the computer system. Once detected, corrective action can be initiated.
Other embodiments are within the scope of the following claims.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US4222045 *||May 4, 1979||Sep 9, 1980||Firetek Corporation||Capacitive shift fire detection device|
|US4598280 *||Aug 20, 1984||Jul 1, 1986||The United States Of America As Represented By The Secretary Of The Army||Electric chip detector|
|US5192701 *||Oct 31, 1990||Mar 9, 1993||Kabushiki Kaisha Toshiba||Method of manufacturing field effect transistors having different threshold voltages|
|US5247827 *||Apr 14, 1992||Sep 28, 1993||Bell Communications Research, Inc.||Resistive measurement of airborne contaminants|
|US5440122 *||Jan 24, 1994||Aug 8, 1995||Seiko Instruments Inc.||Surface analyzing and processing apparatus|
|US5457396 *||Mar 24, 1992||Oct 10, 1995||Kabushiki Kaisha Komatsu Seisakusho||Electrode structure of metallic particle detecting sensor|
|US6928892 *||Sep 3, 2002||Aug 16, 2005||Infineon Technologies Ag||Configuration for determining a concentration of contaminating particles in a loading and unloading chamber of an appliance for processing at least one disk-like object|
|US7038460 *||Feb 27, 2004||May 2, 2006||The United States Of America As Represented By The United States Department Of Energy||Electrostatic dust detector|
|US20020028399 *||Jun 27, 2001||Mar 7, 2002||Mamoru Nakasuji||Inspection system by charged particle beam and method of manufacturing devices using the system|
|US20040031928 *||Sep 26, 2001||Feb 19, 2004||Smith Arthur Ernest||Detector for airborne alpha partice radiation|
|US20040194556 *||Apr 3, 2003||Oct 7, 2004||Intel Corporation||Characterizing in-situ deformation of hard pellicle during fabrication and mounting with a sensor array|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US7655945||Jul 3, 2007||Feb 2, 2010||Regents Of The University Of Minnesota||Real-time monitoring of particles in semiconductor vacuum environment|
|US7986146||Nov 29, 2006||Jul 26, 2011||Globalfoundries Inc.||Method and system for detecting existence of an undesirable particle during semiconductor fabrication|
|U.S. Classification||324/71.4, 324/464|
|International Classification||G01N27/00, G01N27/22|
|Cooperative Classification||Y10T436/107497, Y10T436/108331, G03F7/70908, G01N15/0656|