US 20050236583 A1
Apparatus and method for exposing a selected feature of an integrated circuit device such as a selected portion of the metallization layer, from the backside of the integrated circuit substrate without disturbing adjacent features of the device such as the active semiconductor regions. This is performed using a FIB (focused ion beam) etching process in conjunction with observation by an optical microscope to form a trench through the substrate. The process includes a precise optical endpointing technique to monitor the remaining thickness of the semiconductor substrate at the floor of the trench. It is important to terminate etching of the trench so that the trench floor extends as close to the active semiconductor structures as desired and yet is not detrimental to device operation. This is done without introducing a need for any additional tool. This is carried out using an infra-red optical technique which observes the interference fringes generated by the reflections from the silicon substrate surface and from semiconductor device circuitry layers to quantify the remaining semiconductor substrate thickness in the trench.
1. Apparatus comprising:
a stage for holding a Device Under Test (DUT), said DUT comprising a substrate;
a source of a charged particle beam arranged to direct said beam onto said substrate, for etching a cavity in a first surface of said substrate, said cavity having a floor;
a source of a light beam arranged to direct said light beam into said cavity in the substrate so as to be incident on said floor of the cavity;
an optical system arranged to image a portion of said cavity in the substrate, said optical system including an optical objective lens and further including;
a sensor arranged to detect optical interference fringes resulting from said light beam incident on said floor of the cavity, said fringes having low intensity regions and high intensity regions; and
a display coupled to said sensor configured to display an image of said interference fringes, thereby providing indication of a remaining thickness of said substrate between said floor of the cavity and a second surface of said substrate opposite said first surface of said substrate.
2. The apparatus of
3. The apparatus of
4. The apparatus of
5. The apparatus of
6. The apparatus of
determine the intensities of said low-intensity regions and said high-intensity regions of said interference fringes;
calculate the relative contrast of said interference fringes; and
determine the remaining thickness of said substrate between said floor of the cavity and said second surface of said substrate opposite said first surface of said substrate from said relative contrast of said interference fringes.
7. The apparatus of
This application is a divisional of co-pending U.S. patent application Ser. No. 10/161,272 by Erwan Le Roy and Chun-Cheng Tsao, filed May 30, 2002, and claims priority thereto. The specification of application Ser. No. 10/161,272 is hereby incorporated by reference in its entirety.
This disclosure pertains to semiconductor technology and more specifically to forming a trench through a semiconductor substrate of an integrated circuit so as to access, from the backside of the substrate, interconnection metal layers formed on the opposing principal surface of the substrate, the trenching process using a focused ion beam.
It is well known to use a focused ion beam (FIB) for exposing circuitry on an integrated circuit (OC) to aid in debug, or failure analysis, and repair of the integrated circuit. See for instance U.S. Pat. No. 6,225,626, issued May 1, 2001, to Talbot et al.; U.S. Pat. No. 5,140,164, issued Aug. 18, 1992 to Talbot et al.; and U.S. Pat. No. 5,616,921, issued Apr. 1, 1997 to Talbot et al., all incorporated herein by reference in their entireties. U.S. Pat. No. 6,225,626 discloses methods for exposing a selected feature of an IC such as a selective conductor, from the backside of the IC substrate without disturbing adjacent features of the device, such as the active (semiconductor) regions. The method includes determining a region of the IC in which the selected feature is located; obtaining from the backside of the IC substrate an IR (infra-red) optical microscope image of the region, (wavelength of the IR light is preferably in the range of 900 nanometers to 1900 nanometers, such as about 1200 nanometers—undoped silicon is transparent to light of such wavelengths); aligning the IR optical microscope image with a coordinate system of a milling (FIB) system; and using structures visible in the IR microscope image as a guide, operating the milling system to expose the selected feature from the backside of the IC without disturbing adjacent features.
Other aspects of this approach include forming the trench (typically 100×100 to 500×500 microns and in the case of laser chemically etched trenches up to 2×2 mm) through the backside of the substrate where the trench is stepped in cross-section and milling (etching) down through the substrate from the backside surface thereof to within a few microns of the circuitry layers. The focused ion beam is then used to cut an access hole to certain metal traces in order to reconnect or cut so as to reroute the circuit and thus perform a circuit edit. This is used typically for failure analysis, debug, and repair (rework) of IC's. It is most typically used in the research and development and manufacturing engineering stages. Credence Systems Corporation, assignee of this application and of the above referenced patents, produces commercially available FIB systems, such as the IDS P2X and IDS P3X systems as well as the IDS OptiFib instrument. This latter instrument includes the focused ion beam coaxial with an optical microscope for light optical imaging through silicon, especially with infra-red, and for the observation of the milling process.
It has been recognized by the present inventors that prior to performing circuit editing (cutting and/or filling in of the metal layers), the trench itself which is formed through the backside surface of the silicon substrate must be etched precisely. It has been determined also by the present inventors that in order for this thin remaining layer of silicon substrate to be suitable for the circuit edit, it is preferred that its thickness be precisely determined. Since this silicon layer is the floor of the trench formed from the backside surface of the substrate, the present inventors have determined that it is preferred that the floor of the trench be nearly perfectly flat and/or exactly parallel in terms of its planarity with the circuitry such as the diffusion or active layer of the IC.
It is known in the field that uncertain die thickness and unintentional wedging and bowing, during pre-thinning for instance, contribute to the uncertainty of the remaining thickness of the floor of the trench relative to the active portions (doped regions) of the integrated circuit. Hence it is a known problem to determine the remaining thickness of the floor of the substrate.
One known method provided by Revise Inc. of Burlington, Mass. is referred to as the “OBIC end pointing process” (see U.S. Pat. No. 6,069,366) and permits etching of the trench floor very close (5 to 10 micrometers) to the semiconductor diffusions without need for accurate knowledge of the substrate thickness, wedging or bowing. Note that the wedging or bowing are well known imperfections in semiconductor substrates. In OBIC the end pointing process generates a control signal electrical current which rises exponentially as the active diffusions (regions) are approached during etching of the trench. The source of this current is diffusion of electrons generated by absorption of an intense laser radiation incident on the bottom of the trench during the etching. Using this current detection approach, the etching can be stopped with high accuracy at the desired 5 to 10 micrometers (um) distance from the integrated circuit semiconductor diffusions.
It is believed by Revise that the OBIC process performs well. However OBIC requires providing a laser beam incident on the bottom of the trench and which results in the induced current. Additionally, the OBIC approach requires electrical connection of the IC under trenching and therefore needs electrical feedthroughs for the inherent vacuum requirement of a FIB system. Hence this is an additional complication and expense for the already rather complex FIB tool.
Hence the present inventors have determined that it would be advantageous to be able to measure the thickness of the floor of the trench in the substrate without provision of the laser and electrical feedthroughs required by the OBIC end pointing process.
As described above in connection with the OBIC end pointing process, stopping etching of the trench at a known floor thickness of the semiconductor substrate has been challenging.
The present inventors have found that it is possible to provide an optical end pointing technique (but without use of a laser) using an infra-red optical imaging system and detection of the resulting reflected infra-red light using the interference fringe patterns to quantify the remaining silicon (or other substrate material) thickness at the trench floor. The infra-red (or other suitable light) reflects from the trench floor and also reflects from the interface of the circuitry layers. These dual reflections result in interference fringes. As the remaining substrate thickness at the floor of the trench gets thinner due to progressive trench etching, it is possible to observe Fizeau interference fringes, which when analyzed quantify the remaining substrate thickness with a precision of less than one um for instance.
Advantageously of course there is no need for the laser source required by the OBIC process. Hence a simpler and easier to use tool is provided in, e.g., the IDS OptiFIB which is already equipped with infrared optical system capability and accompanying infra-red light source which can be used for the present end pointing process. The present process depends on the fact that the transmissivity of silicon which is doped, as in semiconductor devices, is primarily a function of remaining silicon thickness. The higher the transmissivity the stronger the interference, therefore the larger the fringe contrast. Interference happens when light reflected off the silicon surface (trench floor) overlaps with light reflected off the circuitry layer. The circuitry layer is complex in terms of material—diffusions, oxide and some less contribution from the poly-silicon and metallizations. It has been found that observations of interference fringes may depend on a relative contrast of the fringes.
It is to be understood that this process is not limited to the typical silicon integrated circuit substrates but also applies to other crystalline substrates used in semiconductors; of course the particular injected FIB gases and FIB ions disclosed here and the accompanying FIB parameters are merely exemplary.
The associated apparatus includes a FIB tool in combination with an optical microscope and suitable controls.
For detail of a FIB apparatus system useful in accordance with this disclosure, see, e.g., U.S. Pat. No. 6,225,626. Conventional detail of this apparatus and the accompanying well known FIB techniques for forming trenches is not included herein except as shown in
For additional detail of such a system see also U.S. Pat. No. 5,140,164, also referred to above. Tools based on the well-known FIB technology are in widespread use in the semiconductor industry and used, for instance, for integrated circuit editing, failure analysis and process monitoring. In terms of repair (“edits”), the repair is only to the metal interconnection layers overlying the actual integrated circuit semiconductor regions; hence, the repair is a circuit repair where “circuit” here refers to one or more of the various metal interconnection layers typically separated by layers of dielectric and overlying the actual crystalline substrate in an IC. The FIB mills (etches) a trench or hole or via, in this case through the IC substrate from the backside, so as to gain access to the metal layers. It is also known to use the FIB tool from the IC topside surface to directly access the metal layers, but this disclosure is not concerned with such an approach. Certain IC's must be accessed from the backside surface such s flip-chips. Flip-chip is a type of packaging for integrated circuits in which the top layer of the IC is covered with an array of bond pads and is then embedded in the packaging, making direct access to the buried conductors (metallization or circuitry as referred to here) difficult or impossible even with the unpackaged IC's from the IC principal surface. For flip-chip packaged devices which are to be accessed by FIB techniques, the electrical interconnections in the package itself cover the entire principal surface of the IC so there is no possibility of accessing the metallization from the top side (principal surface). Hence, access through the backside surface of the IC substrate is required.
Backside FIB access involves first removal of any heatsinking structure or other structures on the backside silicon surface and then the mechanical thinning and polishing of the silicon substrate to less than 100 microns, typically 50 micrometers (see, e.g., U.S. provisional application No. 60/275,760, incorporated herein by reference).
Hence, a method in accordance with this disclosure modifies the technique for forming a trench extending from the pre-thinned obverse (backside) silicon surface of the IC substrate most of the way through the substrate but leaving a thin layer of silicon remaining at the bottom of the trench between the bottom (floor) of the trench and the IC circuitry layer near the principal surface of the substrate itself. This allows relatively easy access thereinafter (e.g., by the focused ion beam) through the floor of the trench to the overlying metal layers.
Other aspects of this process are disclosed in co-pending U.S. patent application Ser. No. 10/160,606, entitled “Method and Apparatus for Forming a Cavity in a Semiconductor Substrate Using a Charged Particle Beam”, inventors Erwan Le Roy and Mark Thompson, incorporated herein by reference in its entirety. This disclosure pertains to other improvements to FIB trenching for circuit modification. It is to be understood that the present method may be accomplished using the above described FIB tool in combination with an optical microscope as known in the field or modifications or improvements thereto.
The process disclosed here is exemplary. It involves etching a trench in a silicon semiconductor crystalline substrate which is part of a fabricated integrated circuit, using a focused ion beam with gallium ions. The integrated circuit has been prepared so that the packaging is removed at least on the backside surface (or perhaps the IC is not packaged) and the pre-thinned IC is conventionally mounted on a stage movable in the Z (vertical) direction. Typically, a distance of about 300 um is maintained between the end of the chemistry injector and the working surface of the trench. The chemistry injector is directed towards the area selected for FIB impact and enables several types of FIB assisted processes, including chemical enhanced etching. The FIB chemistry injector is positioned in Z through calibration with the ion beam focus when the ion beam focal point is on the working surface of the trench. The Z-stage on which the IC sample is mounted is frequently moved to maintain optical focus as the trench gets deeper. Use of infra-red wavelengths is known for through silicon optical observations. Typically, the optical microscope has as associated infra-red light source, includes a bandpass filter admitting the infra-red wavelengths at 900 nanometers with a 70 nm bandwidth and a CCD camera. A typical current of the Fib is in the range of 10-15 nanoAmp. An exemplary original thickness of the silicon substrate is 40 um. Of course, these parameters are merely exemplary.
The upper portion of
Then an anti-reflection (AR) coating is conventionally applied on the exposed backside substrate surface. This coating is typically silicon oxide or hafnium dioxide. This AR coating is formed over the entire exposed backside surface and is provided in order to permit subsequent optical observations for device navigation using the optical microscope.
Then with the AR coating present, the operator, using the optical image, determines exactly where the trench is to be formed. The trench is typically rectangular in shape in plan view with a typical opening from 100×100 to 400×400 micrometers. Its size (length and width) and location are determined with reference to the known IC circuit layout and in accordance with the intended work to be carried out on the IC. The cross-sectional area of the focused ion beam is a very small circular area, typically in the range of 0.5 to 1 micrometer, much smaller than the typical size of the trench opening. Hence, the FIB is conventionally raster scanned over the surface area of the trench in order to perform the actual etching. This is all conventional. In
This exposes the actual (silicon) substrate surface. At this point, an unassisted (no injected chemistry gas) FIB etch is used to smooth the exposed substrate surface. It is intended to remove any surface defect initially present on the exposed substrate surface, generated in the initial thinning process. This if there are any local pits or scratches on the exposed surface, the entire area of the intended trench surface is reduced to the level of the bottom of such scratches of pits. The intention is to have the working substrate surface as smooth as possible. The typical FIB current here is in the range of 10 to 15 nanoAmps. Surface smoothing is monitored through the FIB and light optical images.
This unassisted FIB etching leaves a residual implanted ion layer at the exposed silicon surface due to the build-up of implanted incident ions (e.g., of gallium) from the Fib.
It is then necessary to remove this implanted layer. This is done, again using the FIB, with an injected “chemistry” gas which is, e.g., ethylene-di-iodide (EDI) (see U.S. Pat. No. 5,840,630, incorporated herein by reference in its entirety). A typical flow rate of the EDI results in a chamber pressure of about 2.0×10-5 Torr.
As mentioned above, EDI is chosen as it is less aggressive in attacking the material (silicon) of the substrate than is the chemistry gas later used to rapidly etch the trench. Hence, these particular combinations of chemistry gases are exemplary. Also, there is no requirement that this first gas necessarily be less aggressive than the second gas used in forming the trench, but it has been found to be beneficial to do so because the first chemistry and not the second chemistry does not enhance etching at sharper angles such as defined by the defects and even seems to reduce the sharper angle milling by some process such as creating more mobile surface constituents or enabling the filling in of negative topography and leveling of the positive as has been discussed in the literature for other processes. This provides the desired smoothing, i.e., normalization. The optical microscope image is used to check the substrate surface for smoothness before the actual trenching step begins. The purpose of this step is to remove the implanted ion layer without actually attacking the underlying non-implanted silicon while maintaining the smooth substrate working face.
At each step, the substrate working face is observed both optically using the light optical microscope and, as desired, using FIB imaging. Further detail of what is observed by the operator is described below.
Note that due to the depth of focus of the optical microscope, any surface defect present in the working substrate face is easily observed by the operator. If there are any observed residual surface defects, these are removed by the FIB etching. The optical microscope image is used to check the substrate surface for smoothness before the actual trenching step begins.
Next, the actual conventional trenching is carried out using the FIB assisted with, e.g., conventional xenon-difluoride, again using a beam current of 13.5 nanoAmp. This proceeds as long as needed in order to achieve the desired remaining silicon thickness on the trench floor which typically extends to within 2-6 um of the circuitry layer, that is just above the “circuit” in
The right hand column in
At the subsequent time of 4 minutes of trench etching in
At subsequent time equals 9 minutes, at
One issue is that with the typical FIB system, due to resulting directionality of the chemistry assist gas delivery of the FIB chemistry gas injector, the actual thickness profile of the trench floor is related to the assist chemistry gas flow as the depth of the trench increases. Hence, the resulting trench floor may not be flat. One technique used here to analyze the interference fringes uses a relative contrast measurement on adjacent fringes at the same location. As shown in
This disclosure is illustrative and not limiting. Further modifications will be apparent to one skilled in the art in light of this disclosure, and these modifications are intended to fall within the scope of the appended claims.