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Publication numberUS20050252649 A1
Publication typeApplication
Application numberUS 10/842,347
Publication dateNov 17, 2005
Filing dateMay 11, 2004
Priority dateMay 11, 2004
Publication number10842347, 842347, US 2005/0252649 A1, US 2005/252649 A1, US 20050252649 A1, US 20050252649A1, US 2005252649 A1, US 2005252649A1, US-A1-20050252649, US-A1-2005252649, US2005/0252649A1, US2005/252649A1, US20050252649 A1, US20050252649A1, US2005252649 A1, US2005252649A1
InventorsMing-Chi Chiu, Hsin-Hsiang Chang
Original AssigneeMing-Chi Chiu, Hsin-Hsiang Chang
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
Leadless lower temperature co-crystal phase transition metal heat conductive device
US 20050252649 A1
Abstract
A leadless lower temperature co-crystal phase transition metal heat conductive device comprises two metal substrates made from tin, indium, bismuth and a little other elements; a metal heat conductive sheet installed between the two metal substrates, where the metal substrates having the effect of increasing heat dissipating ability of the metal heat conductive sheet; a heat dissipation device installed above a structure formed by the metal substrates and the metal heat conductive sheet so as to dissipate heat from the metal heat conductive sheet and the two metal substrates; and a fan installed above the heat dissipation device for dissipating heat from the heat dissipation device. When leadless lower temperature co-crystal phase transition metal heat conductive device is placed on a circuit board, the temperature range for co-crystal phase transition is between 50 C. to 70 C.
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Claims(2)
1. A leadless lower temperature co-crystal phase transition metal heat conductive device comprising:
two metal substrates made from tin, indium, bismuth and a little other elements;
a metal heat conductive sheet installed between the two metal substrates, where the metal substrates having the effect of increasing heat dissipating ability of the metal heat conductive sheet;
a heat dissipation device installed above a structure formed by the metal substrates and the metal heat conductive sheet so as to dissipate heat from the metal heat conductive sheet and the two metal substrates; and
a fan installed above the heat dissipation device for dissipating heat from the heat dissipation device.
2. The leadless lower temperature co-crystal phase transition metal heat conductive device as claimed in claim 1, wherein when leadless lower temperature co-crystal phase transition metal heat conductive device is placed on a circuit board, the temperature range for co-crystal phase transition is between 50 C. to 70 C.
Description
FIELD OF THE INVENTION

The present invention relates to a heat dissipation device, and particular to a leadless lower temperature co-crystal phase transition metal heat conductive device which has higher heat dissipating effect by using two metal substrates to enclose one layer of metal heat conductive sheet.

BACKGROUND OF THE INVENTION

With reference to FIG. 5, conventionally, heat conductive glue A or a film is coated upon a bottom of a heat dissipation device. However, most of the heat conductive glue A or film contain with lead which has lower heat conductivity. Moreover, the heat conductive glue A or film cannot be used repeatedly. Further, coating the heat conductive glue A or the film is performed manually so that the distribution of the heat conductive glue A or the film is not uniform. Thereby, if too much heat conductive glue A or film is coated, then some of the heat conductive glue A or film will be extruded out so as to pollute the environment and as a result to affect the manufacturing process.

SUMMARY OF THE INVENTION

Accordingly, the primary object of the present invention is to provide a leadless lower temperature co-crystal phase transition metal heat conductive device which comprises two metal substrates made from tin, indium, bismuth and a little other elements; a metal heat conductive sheet installed between the two metal substrates, where the metal substrates having the effect of increasing heat dissipating ability of the metal heat conductive sheet; a heat dissipation device installed above a structure formed by the metal substrates and the metal heat conductive sheet so as to dissipate heat from the metal heat conductive sheet and the two metal substrates; and a fan installed above the heat dissipation device for dissipating heat from the heat dissipation device. When leadless lower temperature co-crystal phase transition metal heat conductive device is placed on a circuit board, the temperature range for co-crystal phase transition is between 50 C. to 70 C.

The various objects and advantages of the present invention will be more readily understood from the following detailed description when read in conjunction with the appended drawing.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an exploded perspective view of the present invention.

FIG. 2 is an assembled view of the present invention.

FIG. 3 is a cross section view of the present invention.

FIG. 4 shows the embodiment of the present invention.

FIG. 5 shows a prior art heat dissipation device.

DETAILED DESCRIPTION OF THE INVENTION

In order that those skilled in the art can further understand the present invention, a description will be described in the following in details. However, these descriptions and the appended drawings are only used to cause those skilled in the art to understand the objects, features, and characteristics of the present invention, but not to be used to confine the scope and spirit of the present invention defined in the appended claims.

With reference to FIGS. 1, 2 and 3, the leadless lower temperature co-crystal phase transition metal heat conductive sheet. The present invention mainly comprises the following elements.

Two metal substrates 2 and 3 are made from tin, indium, bismuth and a little other elements.

A metal heat conductive sheet 1 is installed between the two metal substrates 2 and 3, where the metal substrates 2 and 3 have the effect of increasing heat dissipating ability of the metal heat conductive sheet 1.

A heat dissipation device 4 is installed above a structure formed by the metal substrates 2, 3 and the metal heat conductive sheet 1 so as to dissipate heat from the metal heat conductive sheet 1 and the metal substrates 2 and 3.

A fan 5 is installed above the heat dissipation device 4 for dissipating heat from the heat dissipation device 4.

The assembly view of the present invention is illustrated in FIG. 4, where the present invention is realized on a circuit board 6 for dissipating heat generated from the circuit board 6, wherein the temperature range for co-crystal phase transition is between 50 C. to 70 C. Thereby, the problem of the pollution of the conventional heat conductive glue will not occur.

Advantages of the present invention will be described herein. Firstly, two metal substrates made from tin, indium, bismuth and a little other elements enclosing the metal heat conductive sheet has the effect of increasing the heat dissipation effect. Moreover, the problem of the pollution of the conventional heat conductive glue will not occur. Furthermore, the assembly of the present invention is rapid so as to increase the manufacturing efficiency.

The present invention is thus described, it will be obvious that the same may be varied in many ways. Such variations are not to be regarded as a departure from the spirit and scope of the present invention, and all such modifications as would be obvious to one skilled in the art are intended to be included within the scope of the following claims.

Referenced by
Citing PatentFiling datePublication dateApplicantTitle
US7369411 *Jan 7, 2004May 6, 2008Thermagon, Inc.Thermal interface assembly and method for forming a thermal interface between a microelectronic component package and heat sink
US20110247796 *Jul 26, 2010Oct 13, 2011Hon Hai Precision Industry Co., Ltd.Heat sink
Classifications
U.S. Classification165/185, 257/E23.099, 257/E23.109
International ClassificationH01L23/373, H01L23/467, F28F7/00
Cooperative ClassificationH01L23/467, H01L23/3736
European ClassificationH01L23/467, H01L23/373M
Legal Events
DateCodeEventDescription
May 11, 2004ASAssignment
Owner name: AMPEC TECHNOLOGY CO., LTD., TAIWAN
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHIU, MING-CHI;CHANG, HSIN-HSIANG;REEL/FRAME:015314/0265
Effective date: 20040420