|Publication number||US20050259709 A1|
|Application number||US 11/138,001|
|Publication date||Nov 24, 2005|
|Filing date||May 26, 2005|
|Priority date||May 7, 2002|
|Also published as||US8265109, US8737438, US20090256057, US20120298838|
|Publication number||11138001, 138001, US 2005/0259709 A1, US 2005/259709 A1, US 20050259709 A1, US 20050259709A1, US 2005259709 A1, US 2005259709A1, US-A1-20050259709, US-A1-2005259709, US2005/0259709A1, US2005/259709A1, US20050259709 A1, US20050259709A1, US2005259709 A1, US2005259709A1|
|Inventors||Palash Das, Thomas Hofmann, Jesse Davis, Scot Smith, William Partlo|
|Original Assignee||Cymer, Inc.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (99), Referenced by (31), Classifications (22), Legal Events (1)|
|External Links: USPTO, USPTO Assignment, Espacenet|
The present invention is a continuation-in-part of U.S. application Ser. No. 10/712,545, filed on Nov. 13, 2003 and titled, “LONG DELAY AND HIGH TIS PULSE STRETCHER” which is a continuation-in-part of U.S. application Ser. No. 10/141,216, filed on May 7, 2002, now U.S. Pat. No. 6,693,939, and titled, “LASER LITHOGRAPHY LIGHT SOURCE WITH BEAM DELIVERY,” the disclosures of each of which are hereby incorporated by reference herein.
The present invention is also a continuation-in-part of U.S. application Ser. No. 10/781,251, titled “VERY HIGH ENERGY, HIGH STABILITY GAS DISCHARGE LASER SURFACE TREATMENT SYSTEM,” filed on Feb. 18, 2004.
The present invention is also a continuation-in-part of U.S. application Ser. No. 10/425,361, filed on Apr. 29, 2003 and titled, “LITHOGRAPHY LASER WITH BEAM DELIVERY AND BEAM POINTING CONTROL.”
The present invention relates to systems and methods for positioning a film for interaction with a laser shaped as a line beam and for controlling parameters of the shaped line beam, for example, to melt an amorphous silicon film, for example, to crystallize the film for the purpose of manufacturing thin film transistors (TFT's).
Laser crystallization of an amorphous silicon film that has been deposited on a substrate, e.g., glass, represents a promising technology for the production of material films having relatively high electron mobilities. Once crystallized, this material can then be used to manufacture thin film transistors (TFT's) and in one particular application, TFT's suitable for use in relatively large liquid crystal displays (LCD's). Other applications for crystallized silicon films may include Organic LED (OLED) and System on a Panel (SOP). In more quantitative terms, high volume production systems may be commercially available in the near future capable of quickly crystallizing a film having a thickness of about 90 nm and a width of about 700 mm or longer. This process may be performed using a pulsed laser that is optically shaped to a line beam, e.g., a laser that is focused in a first axis, e.g., the short axis, and expanded in a second axis, e.g., the long axis. Typically, the first and second axes are mutually orthogonal and both axes are substantially orthogonal to a central ray traveling toward the film. An exemplary line beam for laser crystallization may have a beam width of less than about 20 microns and a beam length of about 700 mm. With this arrangement, the film can be scanned or stepped in a direction parallel to the beam width to sequentially melt and crystallize a film having a substantial length, e.g., 700 mm or more.
In some cases, it may be desirable to ensure that each portion of the silicon film is exposed to a laser energy density that is controlled within a preselected energy density range during melting. In particular, energy density control within a preselected range is typically desired for locations along the shaped line beam, and a somewhat constant energy density is desirable as the line beam is scanned relative to the silicon film. High energy density levels may cause the film to flow resulting in undesirable “thin spots”, a non-flat surface profile and poor grain quality. This uneven distribution of film material is often termed “agglomeration” and can render the crystallized film unsuitable for certain applications. On the other hand, low energy density levels may lead to incomplete melting and result in poor grain quality. By controlling energy density, a film having substantially homogeneous properties may be achieved.
One factor that can affect the energy density within an exposed film is the spatial relationship of the thin film relative to the pulsed laser's depth of focus (DOF). This DOF depends on the focusing lens, but for a typical lens system configured to produce a line beam having a 20 micron beam width, a good approximation of DOF may be about 20 microns.
With the above in mind, it is to be appreciated that a portion of the silicon film that is completely within the laser's DOF will experience a different energy density than a portion of the silicon film that is only partially within the laser's DOF. Thus, surface variations of the silicon film, the glass substrate and the vacuum chuck surface which holds the glass substrate, even variations as small as a few microns, if unaccounted for, can lead to unwanted variations in energy density from one film location to another. Moreover, even under controlled manufacturing conditions, total surface variations (i.e., vacuum chuck+glass substrate+film) can be about 35 microns. It is to be appreciated that these surface variations can be especially problematic for focused thin beam having a DOF of only about 20 microns.
In addition to surface variations, unwanted movements of the film relative to the shaped line beam can also lead to variations in energy density. For example, small movements can occur during stage vibrations. Also, an improper alignment of the stage relative to the shaped line beam and/or an improper alignment of the stage relative to the scan plane can result in an unwanted energy density variation.
Other factors that can lead to a variation in energy density from one film location to another can include changes in laser output characteristics during a scan (e.g., changes in pulse energy, beam pointing, beam divergence, wavelength, bandwidth, pulse duration, etc). Additionally, the location and stability of the shaped line beam and the quality of the beam focus (e.g., shape) during a scan can affect energy density uniformity.
With the above in mind, Applicants disclose several systems and methods for implementing an interaction between a shaped line beam and a film deposited on a substrate.
Systems and methods are disclosed for producing pulses having pulse characteristics suitable for an interaction with a film deposited substrate as a shaped beam defines a short axis and a long axis. In one aspect of an embodiment of the present invention, a system and method ate provided for stretching a laser pulse. The system may comprise a beam splitter for directing a first portion of the pulse along a first beam path and a second portion of the pulse along a second delaying beam path; and a plurality of reflective elements positioned along the delaying beam path and arranged to invert the second beam portion and cooperate with the beam splitter to place at least a portion of the inverted second beam portion for travel on the first beam path.
In another aspect of an embodiment of the present invention, a system and method are provided for maintaining a divergence of a pulsed laser beam at a location along a beam path within a predetermined range. This system may comprise an adjustable beam expander; an instrument for measuring divergence and generating a signal indicative thereof; and a controller responsive to the signal to adjust the beam expander and maintain the divergence of the pulsed laser beam within the predetermined range.
In yet another aspect of an embodiment of the present invention, a laser crystallization apparatus and method are provided for selectively melting a film disposed on a substrate. The apparatus may comprise a laser source producing a pulsed laser output beam; an optical system stretching pulses in the laser output beam to produce a pulse stretcher output; and an optical arrangement producing a line beam from the pulse stretcher output.
In still another aspect of an embodiment of the present invention, a system and method are provided for maintaining the energy density at a film within a predetermined range during an interaction of the film with a shaped beam. This system may comprise an autofocus sensor for measuring a distance between the film and a focusing lens; and a controller using the measurement to adjust a light source parameter to maintain the energy density at the film with the predetermined range.
Referring initially to
In overview, the system 10 shown in
Continuing with reference to
In some cases, as shown in
With the above in mind, Applicants disclose a system and method for maintaining energy density within a preselected range at the film 12, e.g., by altering a pulse characteristic to compensate for a change in focal condition. This change in focal condition can occur, for example, during a scan movement of the stage 30 relative to the laser beam. In greater detail, an energy density obtained with a slightly out-of focus beam (e.g., plot 66) may be chosen as the target energy density. With this target, a focal condition is measured, for example, using the detecting system shown in
Several methods can be used to adjust the pulse energy, as desired, and in some cases on a pulse-to-pulse basis. For example, for an Excimer laser source, the discharge voltage can be varied to achieve a pre-selected pulse energy. Alternatively, an adjustable attenuator can be positioned along the laser beam's beam path to selectively alter pulse energy. For this purpose, any device known in the art for reducing pulse energy including, but not limited to, filters and pulse trimmers may be used. Other pulse characteristics that can be altered to compensate for focus condition to maintain energy density within a preselected range at different locations at the film 12 may include, but are not necessarily limited to, pulse spectrum (i.e., wavelength) using for example an adjustable line narrowing module or a line selection module. Alternatively, an adaptive optic capable of fast focus control can be used as the focusing optic 37 responsive to a measured focal condition in a controlled feedback loop.
As best seen in
Once the roll angle, α, (and, if desired, an incline angle) have been determined, the ZPR table 102 can be selectively activated to move the surface 101 until it is substantially parallel to the reference plane 110, as shown in
In one implementation of the system, the spatial position and orientation of a focused line beam of a laser can be determined. An exemplary focused beam which can be characterized by a substantially linear beam axis 118, is depicted as a dashed line in
As further shown in
Once the relative angle, φ, between the surface 101 and the beam axis 118 has been determined, the ZPR table 102 can be selectively activated to move and orient the table 102 into an alignment wherein the surface 101 is substantially parallel (e.g. parallel within acceptable tolerances for the pertinent art) to the beam axis 118, as shown in
In another aspect of an embodiment of the present invention, the system shown in
The master oscillator 208 and the power amplifier 210 each comprise a discharge chamber which may contain two elongated electrodes, a laser gas, e.g., XeCl, XeF, ArF or KF, a tangential fan for circulating the gas between the electrodes and one or more water-cooled finned heat exchangers (not shown). The master oscillator 208 produces a first laser beam 214A which can be amplified by, e.g., two passes through the power amplifier 210 to produce laser beam 214B. The master oscillator 208 can comprise a resonant cavity formed by output coupler 208A and line narrowing module 208B both of which are described in detail in the applications and patents referenced earlier. The gain medium for master oscillator 208 may be produced between two electrodes, each about thirty to fifty centimeters in length and contained within the master oscillator discharge chamber.
Power amplifier 210 may comprise a discharge chamber similar to the discharge chamber of the master oscillator 208 providing a gain medium between two elongated electrodes. However, unlike the master oscillator 208, the power amplifier 210 typically has no resonant cavity and the gas pressure can, in general, be maintained higher than that of the master oscillator 208. The MOPA configuration shown in
The output beam 214A of the master oscillator 8 can be amplified by, e.g., two passes through power amplifier 210 to produce output beam 214B. The optical components to accomplish this can be contained in three modules which Applicants have named: master oscillator wave front engineering box, MO WEB, 224, power amplifier wavefront engineering box, PA WEB, 226 and beam reverser, BR, 228. These three modules along with line narrowing module 208B and output coupler 208A may all be mounted on a single vertical optical table independent of discharge chamber 208C and the discharge chamber of power amplifier 210. With this arrangement, chamber vibrations caused by acoustic shock and fan rotation may be substantially isolated from the optical components.
The optical components in the line narrowing module 208B and output coupler 208A are described in greater detail in the applications and patents referenced above. In overview, the line narrowing module (LNM) 208B may comprise a three or four prism beam expander, a very fast response tuning mirror and a grating disposed in Litrow configuration. The output coupler 208A may be a partially reflecting mirror which typically reflects about 20 percent of the output beam for KrF systems and about 30 percent for ArF systems. The remaining non-reflected light passes through output coupler 208 and into a line center analysis module (LAM) 207. From the LAM 207, light may pass into the MO WEB 24. The MO WEB may comprise a total internal reflection (TIR) prism (or first surface mirror with a high reflection coating) and alignment components for precisely directing the output beam 214A into the PA WEB 226.
The PA WEB 226 may comprise a TIR prism (or first surface mirror with a high reflection coating) and alignment components for directing a laser beam 214A into a first pass through power amplifier gain medium. The beam reverser module 228 may comprise a two-reflection beam reversing prism which relies on total internal reflection and therefore requires no optical coatings. Alternatively, the beam reverser 228 may be a full reflection mirror. In either case, the beam reverser 228 may be adjustable in response to a control signal from a metrology device, e.g., SMM 26, to direct the partially amplified beam on a pre-selected beam path back through the power amplifier gain medium. In particular, the beam reverser may be adjusted to correct beam pointing error and, as discussed below, to reduce the beam divergence of the beam exiting the pulse stretcher 22.
After reversal in the beam reversing module 228, the partially amplified beam 214A can make another pass through the gain medium in power amplifier 210 and exit through spectral analysis module 209 and PA WEB 226 as power amplifier output beam 214B. From the PA WEB 226, the beam enters, e.g., a six-mirror pulse stretcher 22 which, as detailed below, may increase pulse duration, reduce beam intensity variations across the beam section (i.e., average or smooth out the intensity profile), and reduce beam coherence. By increasing pulse duration, the peak intensity of each laser pulse is reduced while maintaining pulse energy. For the system 10 shown in
As shown in
As indicated above, the performance of a laser crystallization process may be dependent on energy density uniformity. Unlike lithography which is a multi-shot process and enjoys shot-to-shot averaging during exposure, laser crystallization is, for the most part, a single shot process, and thus, averaging may be limited to intensity averaging within a single pulse. Some of the factors that determine energy density uniformity are laser beam uniformity and beam spatial coherence. Typically, optics may be included in the optics module 28 (
One feature of the pulse stretcher 22 shown in
The SMM 26 can be positioned upstream of an input port of the optics module 28 to monitor the incoming beam and providing feedback signals to a control system to assure that the light provided to the optics module 28 at the desired parameters including beam pointing, beam position, beam size, wavefront and pulse energy. For example, pulse energy, beam pointing and beam position may be monitored by meteorology equipment in the SMM 26 on a pulse to pulse basis using techniques described in U.S. patent application Ser. No. 10/425,361 ('361 application) that was previously incorporated by reference herein. Specifically,
The vertical and horizontal beam pointing and position errors may be evaluated at the SMM 26 for every pulse of light generated by the laser. In total there are four independent sensor measurements: vertical pointing error, horizontal pointing error, vertical position error, and horizontal position error. In one exemplary implementation, vertical and horizontal pointing may be measured by putting far-field images on linear photodiode array (PDA) elements, such the S903 NMOS Linear Image Sensors offered by Hamamatsu Corporation with offices in Bridgewater, N.J. Typically, pointing errors may be defined from target locations defined at the exit of SMM 26. Vertical and horizontal position may be measured by putting reduced images of the beam near the BDU exit on linear PDA elements. The pulse energy of the beam may be measured at the SMM 26 with a calibrated photo-cell circuit. Signals from the sensors in the SMM 26 may be sent through electrical connectors to a Stabilization Controller which may form a part of the SMM 26.
Beam pointing control may be achieved by selectively adjusting the orientation of the beam reverser 228 (as discussed earlier), using an active beam steering module 500 upstream of the pulse stretcher 22 (also discussed earlier) and/or within the BDU 24. Specifically, the BDU 24 may comprises two beam-pointing mirrors 240A and 240B, one or both of which may be controlled to provide tip and tilt correction to vary beam pointing. Beam pointing may be monitored in the SMM 26 providing feedback control to one or both of the pointing mirrors 240A, 240B. For example, the error signals may be sent to the Stabilization Controller in the SMM 26 that processes the raw sensor data and generates commands to drive fast steering turning mirrors 40A and 40B. These two fast steering turning mirrors, each with 2 axes of control, may be placed upstream of the SMM 26, as shown. The turning mirrors can each be mounted to a fast steering motor. In particular embodiments, piezoelectric mirror drivers may be provided to permit rapid (200 Hz) beam pointing and position correction.
The motor actuates the mirror angle in two axes and thus may redirect the path of the laser beam. Two motors with 2 axes of control can enable the BDU stabilization controller to independently regulate the vertical and horizontal beam pointing and position errors. The control system can correct for the beam errors from pulse-to-pulse. Namely, the beam errors from each laser pulse can be fed to a feedback control system to generate commands for the steering motors. The electronics used to run the feedback control system may be located in the Stabilization Controller. By placing the mirrors, as shown in
The pulse energy monitored at the SMM 26 may be used as a feedback signal and input to the laser's energy control algorithm. For a gas discharge laser, the laser's discharge voltage may be adjusted to alter pulse energy. Since the energy control algorithm can stabilize energy at the SMM 26 (which is at the optics module 28 input), any short term or long term drifts in pulse energy due to optical absorption or other causes may be compensated.
As indicated above, the SMM 26 may also measure the beam size and beam divergence (i.e., wavefront curvature). Typically, apertures at the laser exit can be used to fix the beam size from the laser. However, beam divergence from the laser can change due to optics heating, laser energy, laser voltage and F2 concentration in the discharge gas when using a fluoride excimer laser.
As shown in
It will be understood by those skilled in the art that the aspects of embodiments of the present invention disclosed above are intended to be preferred embodiments only and not to limit the disclosure of the present invention(s) in any way and particularly not to a specific preferred embodiment alone. Many changes and modification can be made to the disclosed aspects of embodiments of the disclosed invention(s) that will be understood and appreciated by those skilled in the art. The appended claims are intended in scope and meaning to cover not only the disclosed aspects of embodiments of the present invention(s) but also such equivalents and other modifications and changes that would be apparent to those skilled in the art. While the particular aspects of embodiment(s) of the Systems and Methods for Implementing an Interaction between a Laser Shaped as a Line Beam and a Film Deposited on a Substrate described and illustrated in this patent application in the detail required to satisfy 35 U.S.C. §112 is fully capable of attaining any above-described purposes for, problems to be solved by or any other reasons for or objects of the aspects of an embodiment(s) above described, it is to be understood by those skilled in the art that it is the presently described aspects of the described embodiment(s) of the present invention are merely exemplary, illustrative and representative of the subject matter which is broadly contemplated by the present invention. The scope of the presently described and claimed aspects of embodiments fully encompasses other embodiments which may now be or may become obvious to those skilled in the art based on the teachings of the Specification. The scope of the present Systems and Methods for Implementing an Interaction between a Laser Shaped as a Line Beam and a Film Deposited on a Substrate is solely and completely limited by only the appended claims and nothing beyond the recitations of the appended claims. Reference to an element in such claims in the singular is not intended to mean nor shall it mean in interpreting such claim element “one and only one” unless explicitly so stated, but rather “one or more”. All structural and functional equivalents to any of the elements of the above-described aspects of an embodiment(s) that are known or later come to be known to those of ordinary skill in the art are expressly incorporated herein by reference and are intended to be encompassed by the present claims. Any term used in the specification and/or in the claims and expressly given a meaning in the Specification and/or claims in the present application shall have that meaning, regardless of any dictionary or other commonly used meaning for such a term. It is not intended or necessary for a device or method discussed in the Specification as any aspect of an embodiment to address each and every problem sought to be solved by the aspects of embodiments disclosed in this application, for it to be encompassed by the present claims. No element, component, or method step in the present disclosure is intended to be dedicated to the public regardless of whether the element, component, or method step is explicitly recited in the claims. No claim element in the appended claims is to be construed under the provisions of 35 U.S.C. §112, sixth paragraph, unless the element is expressly recited using the phrase “means for” or, in the case of a method claim, the element is recited as a “step” instead of an “act”.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US606412 *||Aug 27, 1897||Jun 28, 1898||Disk plow|
|US607407 *||Oct 18, 1897||Jul 12, 1898||By Mesne Assign||Ments|
|US4455658 *||Apr 20, 1982||Jun 19, 1984||Sutter Jr Leroy V||Coupling circuit for use with a transversely excited gas laser|
|US4494167 *||Apr 2, 1982||Jan 15, 1985||The Marconi Company Limited||Inductor|
|US4500996 *||Mar 31, 1982||Feb 19, 1985||Coherent, Inc.||High power fundamental mode laser|
|US4723256 *||Mar 20, 1986||Feb 2, 1988||Laser Corporation Of America||Optical resonator for laser oscillating apparatus|
|US4757511 *||Nov 22, 1985||Jul 12, 1988||Trumpf Gmbh & Company||High frequency folded gross-flow gas laser with approved gas flow characteristics and method for producing laser beam using same|
|US4891820 *||Jul 6, 1987||Jan 2, 1990||Rofin-Sinar, Inc.||Fast axial flow laser circulating system|
|US4902998 *||Nov 21, 1988||Feb 20, 1990||Westinghouse Electric Corp.||Inductor assembly with cooled winding turns|
|US4983859 *||Aug 22, 1989||Jan 8, 1991||Hitachi Metals, Ltd.||Magnetic device for high-voltage pulse generating apparatuses|
|US5005180 *||Sep 1, 1989||Apr 2, 1991||Schneider (Usa) Inc.||Laser catheter system|
|US5023884 *||Jul 10, 1990||Jun 11, 1991||Cymer Laser Technologies||Compact excimer laser|
|US5025445 *||Nov 22, 1989||Jun 18, 1991||Cymer Laser Technologies||System for, and method of, regulating the wavelength of a light beam|
|US5025446 *||Jan 23, 1989||Jun 18, 1991||Laserscope||Intra-cavity beam relay for optical harmonic generation|
|US5100609 *||Nov 19, 1990||Mar 31, 1992||General Electric Company||Enhancing load-following and/or spectral shift capability in single-sparger natural circulation boiling water reactors|
|US5113408 *||Nov 8, 1990||May 12, 1992||Otto Bihler||Laser|
|US5189678 *||Sep 29, 1986||Feb 23, 1993||The United States Of America As Represented By The United States Department Of Energy||Coupling apparatus for a metal vapor laser|
|US5313481 *||Sep 29, 1993||May 17, 1994||The United States Of America As Represented By The United States Department Of Energy||Copper laser modulator driving assembly including a magnetic compression laser|
|US5315611 *||Jun 12, 1992||May 24, 1994||The United States Of America As Represented By The United States Department Of Energy||High average power magnetic modulator for metal vapor lasers|
|US5325407 *||Mar 22, 1993||Jun 28, 1994||Westinghouse Electric Corporation||Core barrel and support plate assembly for pressurized water nuclear reactor|
|US5329350 *||May 21, 1992||Jul 12, 1994||Photon, Inc.||Measuring laser beam parameters using non-distorting attenuation and multiple simultaneous samples|
|US5416391 *||Oct 15, 1992||May 16, 1995||Correa; Paulo N.||Electromechanical transduction of plasma pulses|
|US5432122 *||Nov 3, 1993||Jul 11, 1995||Gold Star Co., Ltd.||Method of making a thin film transistor by overlapping annealing using lasers|
|US5625193 *||Jul 10, 1995||Apr 29, 1997||Qc Optics, Inc.||Optical inspection system and method for detecting flaws on a diffractive surface|
|US5642374 *||Apr 10, 1995||Jun 24, 1997||Kabushiki Kaisha Komatsu Seisakusho||Excimer laser device|
|US5754579 *||May 26, 1995||May 19, 1998||Komatsu Ltd.||Laser gas controller and charging/discharging device for discharge-excited laser|
|US5771258 *||May 16, 1997||Jun 23, 1998||Cymer, Inc.||Aerodynamic chamber design for high pulse repetition rate excimer lasers|
|US5856991 *||Jun 4, 1997||Jan 5, 1999||Cymer, Inc.||Very narrow band laser|
|US5863017 *||Jan 5, 1996||Jan 26, 1999||Cymer, Inc.||Stabilized laser platform and module interface|
|US6014398 *||May 20, 1998||Jan 11, 2000||Cymer, Inc.||Narrow band excimer laser with gas additive|
|US6016323 *||Jun 6, 1995||Jan 18, 2000||Spectra Physics Lasers, Inc.||Broadly tunable single longitudinal mode output produced from multi-longitudinal mode seed source|
|US6016325 *||Apr 27, 1998||Jan 18, 2000||Cymer, Inc.||Magnetic modulator voltage and temperature timing compensation circuit|
|US6018537 *||Mar 19, 1999||Jan 25, 2000||Cymer, Inc.||Reliable, modular, production quality narrow-band high rep rate F2 laser|
|US6028880 *||Jul 2, 1998||Feb 22, 2000||Cymer, Inc.||Automatic fluorine control system|
|US6067306 *||May 19, 1998||May 23, 2000||Cymer, Inc.||Laser-illuminated stepper or scanner with energy sensor feedback|
|US6067311 *||Sep 4, 1998||May 23, 2000||Cymer, Inc.||Excimer laser with pulse multiplier|
|US6177301 *||May 13, 1999||Jan 23, 2001||Lg.Philips Lcd Co., Ltd.||Method of fabricating thin film transistors for a liquid crystal display|
|US6188710 *||Jul 27, 1999||Feb 13, 2001||Cymer, Inc.||Narrow band gas discharge laser with gas additive|
|US6192064 *||Dec 22, 1999||Feb 20, 2001||Cymer, Inc.||Narrow band laser with fine wavelength control|
|US6208674 *||Aug 31, 1999||Mar 27, 2001||Cymer, Inc.||Laser chamber with fully integrated electrode feedthrough main insulator|
|US6208675 *||Aug 27, 1998||Mar 27, 2001||Cymer, Inc.||Blower assembly for a pulsed laser system incorporating ceramic bearings|
|US6212211 *||Oct 9, 1998||Apr 3, 2001||Cymer, Inc.||Shock wave dissipating laser chamber|
|US6212214 *||Aug 23, 1999||Apr 3, 2001||Lambda Physik Ag||Performance control system and method for gas discharge lasers|
|US6215595 *||May 30, 2000||Apr 10, 2001||Semiconductor Energy Laboratory Co., Ltd||Apparatus and method for laser radiation|
|US6219368 *||Jun 30, 1999||Apr 17, 2001||Lambda Physik Gmbh||Beam delivery system for molecular fluorine (F2) laser|
|US6240117 *||Nov 12, 1998||May 29, 2001||Cymer, Inc.||Fluorine control system with fluorine monitor|
|US6243406 *||Oct 14, 1999||Jun 5, 2001||Peter Heist||Gas performance control system for gas discharge lasers|
|US6359922 *||Oct 20, 1999||Mar 19, 2002||Cymer, Inc.||Single chamber gas discharge laser with line narrowed seed beam|
|US6368945 *||Mar 16, 2000||Apr 9, 2002||The Trustees Of Columbia University In The City Of New York||Method and system for providing a continuous motion sequential lateral solidification|
|US6370174 *||Dec 10, 1999||Apr 9, 2002||Cymer, Inc.||Injection seeded F2 lithography laser|
|US6373623 *||Oct 3, 2000||Apr 16, 2002||Fujitsu Limited||Optical amplifier for use in optical communications equipment|
|US6381257 *||Dec 28, 1999||Apr 30, 2002||Cymer, Inc.||Very narrow band injection seeded F2 lithography laser|
|US6389052 *||Dec 11, 2000||May 14, 2002||Lambda Physik Ag||Laser gas replenishment method|
|US6396856 *||Mar 27, 1998||May 28, 2002||Irma America, Inc.||Scanning temporal ultrafast delay methods and apparatuses therefor|
|US6407836 *||Jun 30, 1998||Jun 18, 2002||Fujitsu Limited||Optical attenuator and system, optical amplifier, and terminal device each having the optical attenuator|
|US6504861 *||Apr 1, 2002||Jan 7, 2003||Lambda Physik Ag||Laser gas replenishment method|
|US6507422 *||Nov 27, 2000||Jan 14, 2003||Fujitsu Limited||Optical attenuator and system, optical amplifier, and terminal device each having the optical attenuator|
|US6529531 *||Jun 19, 2000||Mar 4, 2003||Cymer, Inc.||Fast wavelength correction technique for a laser|
|US6532247 *||Feb 27, 2001||Mar 11, 2003||Cymer, Inc.||Laser wavelength control unit with piezoelectric driver|
|US6535531 *||Nov 29, 2001||Mar 18, 2003||Cymer, Inc.||Gas discharge laser with pulse multiplier|
|US6538737 *||Oct 31, 2001||Mar 25, 2003||Cymer, Inc.||High resolution etalon-grating spectrometer|
|US6539046 *||Dec 27, 1999||Mar 25, 2003||Cymer, Inc.||Wavemeter for gas discharge laser|
|US6549551 *||May 3, 2001||Apr 15, 2003||Cymer, Inc.||Injection seeded laser with precise timing control|
|US6555449 *||Sep 3, 1999||Apr 29, 2003||Trustees Of Columbia University In The City Of New York||Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication|
|US6556600 *||May 14, 2001||Apr 29, 2003||Cymer, Inc.||Injection seeded F2 laser with centerline wavelength control|
|US6560254 *||Feb 15, 2002||May 6, 2003||Lambda Physik Ag||Line-narrowing module for high power laser|
|US6563077 *||Mar 30, 2001||May 13, 2003||The Trustees Of Columbia University||System for providing a continuous motion sequential lateral solidification|
|US6563853 *||Apr 24, 2001||May 13, 2003||Lambda Physik Ag||Gas performance control system for gas discharge lasers|
|US6567450 *||Aug 29, 2001||May 20, 2003||Cymer, Inc.||Very narrow band, two chamber, high rep rate gas discharge laser system|
|US6573531 *||Sep 3, 1999||Jun 3, 2003||The Trustees Of Columbia University In The City Of New York||Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures|
|US6577380 *||Jul 21, 2000||Jun 10, 2003||Anvik Corporation||High-throughput materials processing system|
|US6582827 *||Nov 27, 2000||Jun 24, 2003||The Trustees Of Columbia University In The City Of New York||Specialized substrates for use in sequential lateral solidification processing|
|US6584132 *||Feb 1, 2001||Jun 24, 2003||Cymer, Inc.||Spinodal copper alloy electrodes|
|US6687562 *||Dec 8, 2000||Feb 3, 2004||Cymer, Inc.||Process monitoring system for lithography lasers|
|US6690704 *||Jul 31, 2002||Feb 10, 2004||Cymer, Inc.||Control system for a two chamber gas discharge laser|
|US6693939 *||May 7, 2002||Feb 17, 2004||Cymer, Inc.||Laser lithography light source with beam delivery|
|US6704340 *||Sep 25, 2002||Mar 9, 2004||Cymer, Inc.||Lithography laser system with in-place alignment tool|
|US6721340 *||Jun 30, 2000||Apr 13, 2004||Cymer, Inc.||Bandwidth control technique for a laser|
|US6750972 *||Jun 14, 2002||Jun 15, 2004||Cymer, Inc.||Gas discharge ultraviolet wavemeter with enhanced illumination|
|US6757316 *||May 11, 2001||Jun 29, 2004||Cymer, Inc.||Four KHz gas discharge laser|
|US6853653 *||Dec 21, 2001||Feb 8, 2005||Cymer, Inc.||Laser spectral engineering for lithographic process|
|US6882674 *||Dec 21, 2001||Apr 19, 2005||Cymer, Inc.||Four KHz gas discharge laser system|
|US20020006149 *||Feb 27, 2001||Jan 17, 2002||Spangler Ronald L.||Laser wavelength control unit with piezoelectric driver|
|US20020012376 *||Apr 18, 2001||Jan 31, 2002||Das Palash P.||High repetition rate gas discharge laser with precise pulse timing control|
|US20020021728 *||May 11, 2001||Feb 21, 2002||Newman Peter C.||Four KHz gas discharge laser|
|US20020022293 *||Apr 20, 2001||Feb 21, 2002||Nec Corporation||Charge transfer device and solid image pickup apparatus using the same|
|US20020048288 *||Jul 27, 2001||Apr 25, 2002||Armen Kroyan||Laser spectral engineering for lithographic process|
|US20030012234 *||Jun 28, 2002||Jan 16, 2003||Watson Tom A.||Six to ten KHz, or greater gas discharge laser system|
|US20030016363 *||Jun 14, 2002||Jan 23, 2003||Sandstrom Richard L.||Gas discharge ultraviolet wavemeter with enhanced illumination|
|US20030018072 *||Jul 17, 2002||Jan 23, 2003||Joshi Rajendra Kumar||Utilization of dialkylfumarates|
|US20030031216 *||Jul 31, 2002||Feb 13, 2003||Fallon John P.||Control system for a two chamber gas discharge laser|
|US20030058429 *||Aug 12, 2002||Mar 27, 2003||Lambda Physik Ag||Stable energy detector for extreme ultraviolet radiation detection|
|US20030096489 *||Nov 13, 2002||May 22, 2003||Im James S.||Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification|
|US20030099269 *||Dec 21, 2001||May 29, 2003||Ershov Alexander I.||Timing control for two-chamber gas discharge laser system|
|US20030118072 *||Dec 21, 2001||Jun 26, 2003||Wittak Christian J.||Four KHz gas discharge laser system|
|US20030119286 *||Dec 3, 2002||Jun 26, 2003||Im James S.||Method for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification|
|US20040022293 *||Jan 31, 2003||Feb 5, 2004||Rule John A.||Automatic gas control system for a gas discharge laser|
|US20040047385 *||Jul 24, 2003||Mar 11, 2004||Knowles David S.||Very narrow band, two chamber, high reprate gas discharge laser system|
|US20040060504 *||Jun 17, 2003||Apr 1, 2004||Hitachi, Ltd.||Semiconductor thin film and process for production thereof|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US7209507 *||Dec 18, 2003||Apr 24, 2007||Cymer, Inc.||Method and apparatus for controlling the output of a gas discharge MOPA laser system|
|US7408714||Feb 9, 2006||Aug 5, 2008||Coherent, Inc.||Method and apparatus for coupling laser beams|
|US7433372||Jun 5, 2006||Oct 7, 2008||Cymer, Inc.||Device and method to stabilize beam shape and symmetry for high energy pulsed laser applications|
|US7471455 *||Oct 28, 2005||Dec 30, 2008||Cymer, Inc.||Systems and methods for generating laser light shaped as a line beam|
|US7518787||Jun 14, 2006||Apr 14, 2009||Cymer, Inc.||Drive laser for EUV light source|
|US7564888||May 23, 2007||Jul 21, 2009||Cymer, Inc.||High power excimer laser with a pulse stretcher|
|US7655925||Aug 31, 2007||Feb 2, 2010||Cymer, Inc.||Gas management system for a laser-produced-plasma EUV light source|
|US7671349||Apr 10, 2007||Mar 2, 2010||Cymer, Inc.||Laser produced plasma EUV light source|
|US7812329||Dec 14, 2007||Oct 12, 2010||Cymer, Inc.||System managing gas flow between chambers of an extreme ultraviolet (EUV) photolithography apparatus|
|US7856044||Apr 16, 2007||Dec 21, 2010||Cymer, Inc.||Extendable electrode for gas discharge laser|
|US7897947||Jul 13, 2007||Mar 1, 2011||Cymer, Inc.||Laser produced plasma EUV light source having a droplet stream produced using a modulated disturbance wave|
|US8158960||Mar 10, 2010||Apr 17, 2012||Cymer, Inc.||Laser produced plasma EUV light source|
|US8183498||Feb 12, 2007||May 22, 2012||Tcz, Llc||Systems and method for optimization of laser beam spatial intensity profile|
|US8319201||Feb 17, 2011||Nov 27, 2012||Cymer, Inc.||Laser produced plasma EUV light source having a droplet stream produced using a modulated disturbance wave|
|US8462425||Mar 31, 2011||Jun 11, 2013||Cymer, Inc.||Oscillator-amplifier drive laser with seed protection for an EUV light source|
|US8519366||Aug 6, 2008||Aug 27, 2013||Cymer, Inc.||Debris protection system having a magnetic field for an EUV light source|
|US8653437||Jun 9, 2011||Feb 18, 2014||Cymer, Llc||EUV light source with subsystem(s) for maintaining LPP drive laser output during EUV non-output periods|
|US8654438||Mar 31, 2011||Feb 18, 2014||Cymer, Llc||Master oscillator-power amplifier drive laser with pre-pulse for EUV light source|
|US8724203||Dec 12, 2011||May 13, 2014||Corning Incorporated||Variable pulse stretching length by variable beamsplitter reflectivity|
|US8803027||May 23, 2007||Aug 12, 2014||Cymer, Llc||Device and method to create a low divergence, high power laser beam for material processing applications|
|US8927898 *||May 1, 2006||Jan 6, 2015||Tcz, Llc||Systems and method for optimization of laser beam spatial intensity profile|
|US9018561 *||Sep 17, 2008||Apr 28, 2015||Cymer, Llc||High power seed/amplifier laser system with beam shaping intermediate the seed and amplifier|
|US20050135451 *||Dec 18, 2003||Jun 23, 2005||Rule John A.||Method and apparatus for controlling the output of a gas discharge MOPA laser system|
|US20050238077 *||Dec 18, 2003||Oct 27, 2005||Rule John A||Method and apparatus for controlling the output of a gas discharge MOPA laser system|
|US20090116530 *||Sep 17, 2008||May 7, 2009||Cymer, Inc.||High power seed/amplifier laser system with beam shaping intermediate the seed and amplifier|
|US20120150160 *||Jun 14, 2012||Klaus Vogler||Apparatus for laser surgical ophthalmology|
|US20140167049 *||Feb 24, 2014||Jun 19, 2014||Panasonic Corporation||Method of manufacturing substrate having thin film thereabove, method of manufacturing thin-film-device substrate, thin-film substrate, and thin-film-device substrate|
|EP1889000A2 *||May 25, 2006||Feb 20, 2008||Cymer, Inc.||Systems and methods for implementing an interaction between a laser shaped as a line beam and a film deposited on a substrate|
|EP2036168A2 *||May 22, 2007||Mar 18, 2009||Cymer, Inc.||Device and method to stabilize beam shape and symmetry for high energy pulsed laser applications|
|WO2008100708A2 *||Jan 30, 2008||Aug 21, 2008||Knowles David S||Systems and method for optimization of lazer beam spatial intensity profile|
|WO2013090154A1 *||Dec 10, 2012||Jun 20, 2013||Corning Incorporated||Variable pulse stretching length by variable beamsplitter reflectivity|
|U.S. Classification||372/55, 372/34, 372/30, 372/25|
|International Classification||H01S3/13, C30B1/02, C30B13/24, H01S3/10, B23K26/073, B23K26/04, B23K26/06|
|Cooperative Classification||B23K26/043, B23K26/04, B23K26/063, C30B1/023, C30B13/24, B23K26/0738|
|European Classification||B23K26/04, C30B13/24, B23K26/073H, C30B1/02B, B23K26/06B4|
|Jul 28, 2005||AS||Assignment|
Owner name: CYMER, INC., CALIFORNIA
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:DAS, PALASH P.;HOFMANN, THOMAS;DAVIS, JESSE D.;AND OTHERS;REEL/FRAME:016578/0563;SIGNING DATES FROM 20050610 TO 20050707