Search Images Maps Play YouTube News Gmail Drive More »
Sign in
Screen reader users: click this link for accessible mode. Accessible mode has the same essential features but works better with your reader.

Patents

  1. Advanced Patent Search
Publication numberUS20060105182 A1
Publication typeApplication
Application numberUS 10/989,975
Publication dateMay 18, 2006
Filing dateNov 16, 2004
Priority dateNov 16, 2004
Also published asUS8279577, US20110024047
Publication number10989975, 989975, US 2006/0105182 A1, US 2006/105182 A1, US 20060105182 A1, US 20060105182A1, US 2006105182 A1, US 2006105182A1, US-A1-20060105182, US-A1-2006105182, US2006/0105182A1, US2006/105182A1, US20060105182 A1, US20060105182A1, US2006105182 A1, US2006105182A1
InventorsKarl Brueckner, Brian West, Marc Schweitzer, Jennifer Tiller, Alan Popiolkowski
Original AssigneeApplied Materials, Inc.
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
Erosion resistant textured chamber surface
US 20060105182 A1
Abstract
A component for a substrate processing chamber has a structure having an overlying metal coating. The metal coating has a plurality of electron beam textured features that are formed by scanning an electron beam across a surface of the metal coating. The electron beam textured features include a plurality of depressions and protuberances on the surface that are capable of accumulating process deposits during processing of a substrate to reduce contamination of the substrate. The component having the metal coating provides improved processing results, and exhibits reduced erosion during cleaning processes performed to remove process deposits from the component.
Images(4)
Previous page
Next page
Claims(18)
1. A component for a substrate processing chamber, the component comprising:
(a) a component structure;
(b) a metal coating on the component structure; and
(c) electron beam textured features on the metal coating, the electron beam textured features comprising a plurality of depressions and protuberances,
whereby the component provides improved erosion resistance in the substrate processing chamber.
2. A component according to claim 1 wherein the metal coating comprises at least one of stainless steel, copper, nickel, tantalum and titanium.
3. A component according to claim 2 wherein the metal coating comprises a sprayed coating that is formed by at least partially melting coating material and propelling the coating material onto the component structure.
4. A component according to claim 1 wherein the metal coating has a thickness of from about 120 micrometers to about 2600 micrometers.
5. A component according to claim 1 wherein the electron beam textured features comprise depressions having (i) a depth of from about 20 micrometers to about 1600 micrometers, and (ii) a surface diameter of from about 120 micrometers to about 2600 micrometers, and protuberances comprising a height of from about 50 micrometers to about 1600 micrometers.
6. A component according to claim 1 wherein the component comprises at least one of a chamber enclosure wall, a chamber shield, a target, a target rim, a cover ring, a deposition ring, a support ring, an insulator ring, a coil, a coil support, a shutter disk, a clamp shield, and a portion of a substrate support.
7. A substrate processing chamber comprising the component of claim 1, the chamber comprising a substrate support, gas delivery system, gas energizer and exhaust.
8. A process kit for a substrate processing chamber, the process kit comprising:
(a) a ring adapted to at least partially surround a substrate in the processing chamber, the ring comprising a metallic material;
(b) a stainless steel coating on the ring; and
(c) electron beam textured features on the stainless steel coating, the electron beam textured features comprising a plurality of depressions and protuberances,
whereby the process kit provides improved erosion resistance in the substrate processing chamber.
9. A component according to claim 8 wherein the electron beam textured features comprise depressions having (i) a depth of from about 20 micrometers to about 1600 micrometers, and (ii) a surface diameter of from about 120 micrometers to about 2600 micrometers, and protuberances comprising a height of from about 50 micrometers to about 1600 micrometers.
10. A component according to claim 8 wherein the ring comprises a metallic material comprising at least one of titanium, stainless steel, copper, tantalum and aluminum.
11. A process chamber shield for a substrate processing chamber, the shield comprising:
(a) a shield structure adapted to at least partially shield a process chamber wall, the shield structure comprising a metallic material;
(b) a stainless steel coating on the shield structure; and
(c) electron beam textured features on the stainless steel coating, the electron beam textured features comprising a plurality of depressions and protuberances,
whereby the process chamber shield provides improved erosion resistance in the substrate processing chamber.
12. A component according to claim 11 wherein the electron beam textured features comprise depressions having (i) a depth of from about 20 micrometers to about 1600 micrometers, and (ii) a surface diameter of from about 120 micrometers to about 2600 micrometers, and protuberances comprising a height of from about 50 micrometers to about 1600 micrometers.
13. A component according to claim 11 wherein the shield structure comprises a metallic material comprising at least one of titanium, stainless steel, copper, tantalum and aluminum.
14. A method of fabricating a component for a substrate processing chamber, the method comprising:
(a) providing a component structure;
(b) forming a metal coating on the component structure, the metal coating having a surface; and
(c) scanning an electron beam across the surface to form a plurality of electron beam textured features comprising depressions and protuberances in the surface.
15. A method according to claim 14 wherein (b) comprises forming a metal coating comprising at least one of stainless steel, copper, nickel, tantalum and titanium.
16. A method according to claim 14 wherein (b) comprises spraying a metal coating on the component structure by at least partially melting coating material and propelling the coating material onto the structure.
17. A method according to claim 14 wherein (b) comprises forming a metal coating having a thickness of from about 120 micrometers to about 2600 micrometers.
18. A method according to claim 14 wherein (c) comprises scanning an electron beam across the surface to form a plurality of electron beam textured features comprising depressions having (i) a depth of from about 20 micrometers to about 1600 micrometers, and (ii) a surface diameter of from about 120 micrometers to about 2600 micrometers, and protuberances having a height of from about 50 micrometers to about 1600 micrometers.
Description
    BACKGROUND
  • [0001]
    In the processing of substrates such as semiconductor wafers and displays, a substrate is placed in a process chamber and exposed to an energized gas to deposit or etch material on the substrate. During such processing, process residues are generated and can deposit on internal surfaces in the chamber. For example, in sputter deposition processes, material sputtered from a target for deposition on a substrate also deposits on other component surfaces in the chamber, such as on deposition rings, shadow rings, wall liners, and focus rings. In subsequent process cycles, the deposited process residues can “flake off” of the chamber surfaces to fall upon and contaminate the substrate. To reduce the contamination of the substrates by process residues, the surfaces of components in the chamber can be textured. Process residues adhere to the textured surface and inhibit the process residues from falling off and contaminating the substrates in the chamber.
  • [0002]
    In one version, the textured component surface is formed by directing an electromagnetic energy beam onto a surface of a process chamber component surface to form depressions and protrusions to which process deposits adhere. An example of such a surface is a Lavacoat™ surface, as described for example in U.S. Patent Publication No. 2003-0173526 to Popiolkowski et al, published on Sep. 18, 2003, and filed on Mar. 13, 2002; and U.S. Patent Publication No. 2004-0056211 to Popiolkowski et al, published on Mar. 25, 2004, and filed on Jul. 17, 2003—both commonly assigned to Applied Materials, Inc, and both of which are incorporated herein by reference in their entireties. The Lavacoat™ surface comprises depressions and protrusions to which process residues can adhere to reduce the contamination of substrates during their processing.
  • [0003]
    While components having textured surfaces provide improved residue adherence over other types of process components, performance issues can arise when the components are cleaned to remove accumulated process residues. In an exemplary cleaning process, the component comprising the textured surface is immersed in a cleaning solution, such as an acidic solution. However, cleaning solutions that are capable of cleaning process residues can also erode the textured surface to alter the surface features, and consequently, reduce the adherence of process residues thereto. For example, textured component surfaces comprising aluminum and titanium can be eroded by an acidic solution of HNO3 and HF—which is used to remove tantalum-containing process residues from the component surfaces. Because the eroded surfaces can exhibit poor residue adhesion, the components may require replacement or refurbishment after only a few cleaning cycles, thereby increasing substrate processing costs and chamber downtime.
  • [0004]
    Accordingly, it is desirable to have a component comprising a textured surface that provides good adherence of process residues, to improve processing results and reduce contamination of substrates. It is further desirable to be able to effectively clean accumulated process residues from the component surface without erosion of the residues during cleaning. It is further desirable to have a method of fabricating a component having a textured surface that has improved erosion resistance during cleaning processes and provides good results in the processing of substrates.
  • SUMMARY
  • [0005]
    In one version, a component for a substrate processing chamber has a structure having an overlying metal coating. The metal coating has a plurality of electron beam textured features that are formed by scanning an electron beam across a surface of the metal coating. The textured features include a plurality of depressions and protuberances that are capable of accumulating process deposits during processing of a substrate to reduce contamination of the substrate. The component having the metal coating provides improved processing results, and exhibits reduced erosion during cleaning processes performed to remove process deposits from the component.
  • [0006]
    In another version, a process kit for a substrate processing chamber has a ring adapted to at least partially surround a substrate in the processing chamber. The ring is of a metallic material, and has a stainless steel coating. The stainless steel coating has electron beam textured features thereon, the electron beam textured features having a plurality of depressions and protuberances. The process kit provides improved erosion resistance in the substrate processing chamber.
  • [0007]
    In yet another version, a process chamber shield for a substrate processing chamber has a shield structure that is adapted to at least partially shield a process chamber wall. The shield structure is of a metallic material, and has a stainless steel coating. The stainless steel coating has electron beam textured features thereon, the electron beam textured features having a plurality of depressions and protuberances. The process chamber shield provides improved erosion resistance in the substrate processing chamber.
  • [0008]
    In another version, a method of fabricating a component for a substrate processing chamber includes providing a component structure and forming a metal coating on the component structure. An electron beam is scanned across a surface of the metal coating to form a plurality of textured features including depressions and protuberances on the surface. The metal coating can be formed by at least partially melting a coating material and propelling the coating material onto the component structure.
  • DRAWINGS
  • [0009]
    These features, aspects, and advantages of the present invention will become better understood with regard to the following description, appended claims, and accompanying drawings, which illustrate examples of the invention. However, it is to be understood that each of the features can be used in the invention in general, not merely in the context of the particular drawings, and the invention includes any combination of these features, where:
  • [0010]
    FIG. 1 a is a sectional side view of a component having a metal coating and a textured surface formed by scanning an electromagnetic energy beam across the layer;
  • [0011]
    FIG. 1 b is a sectional top view of an embodiment of the component of FIG. 1 a; and
  • [0012]
    FIG. 2 is a sectional side view of an embodiment of a substrate processing chamber having one or more components comprising electron beam textured features on a metal coating.
  • DESCRIPTION
  • [0013]
    A process chamber component 22 having a textured surface 20 is provided for the processing of substrates in an energized gas in a process chamber 106, as shown for example in FIGS. 1 a and 1 b. The component 22 having the textured surface reduces particle generation in the process chamber 106 by providing a “sticky” surface to which process deposits 24 adhere, thus allowing the deposits 24 to accumulate on the textured surface 20. Process deposits 24 that adhere to the textured surface 20 can include metal-containing deposits, such as deposits comprising at least one of tantalum, tantalum nitride, titanium, titanium nitride, aluminum, copper, tungsten, and tungsten nitride. The chamber components 22 having the textured surface 20 can comprise, for example, a portion of a gas delivery system 112 that provides process gas in the chamber 106, a substrate support 114 that supports the substrate 104 a in the chamber 106, a process kit 139, a gas energizer 116 that energizes the process gas, chamber enclosure walls 118 and shields 120, or a gas exhaust 122 that exhausts gas from the chamber 106.
  • [0014]
    Referring to FIG. 2, which illustrates an exemplary version of a physical vapor deposition chamber 106, components 22 having the textured surface 20 can include a chamber enclosure wall 118, a chamber shield 120, a target 124, a target rim 125, a component of a process kit 139 such as at least one of a cover ring 126 and a deposition ring 128, a support ring 130, insulator ring 132, a coil 135, coil support 137, shutter disk 104 b, clamp shield 141, and a portion of the substrate support 114. For example, components having the textured surface can include Applied Material's part numbers 0020-50007, 0020-50008, 0020-50010, 0020-50012, 0020-50013, 0020-48908, 0021-23852, 0020-48998, 0020-52149, 0020-51483, 0020-49977, 0020-52151, 0020-48999, 0020-48042 and 0190-14818, from Applied Materials, Santa Clara, Calif. This list of components is merely exemplary and the other components or components from other types of chambers can also have the textured surface, thus, the present invention should not be limited to the components listed or described herein.
  • [0015]
    In one version, one or more process chamber components 22 comprise a surface that is textured by scanning an electromagnetic energy beam 40 such as an electron beam 40 across the surface 20, to form electron beam textured features 25 on the surface. An example of such a textured surface 20 is that formed by a Lavacoat™ process, as described for example in U.S. patent application Ser. No. 10/653,713 to West, et al, filed on Sep. 2, 2003, entitled “Fabricating and Cleaning Chamber Components Having Textured Surfaces,” and aforementioned U.S. Patent Publication Nos. 2003/0173526 and 2004/0056211, all commonly assigned to Applied Materials, Inc., and all of which are incorporated herein by reference in their entireties. The electron beam textured features 25 of the Lavacoat™ process comprise a plurality of depressions 23 and protuberances 26 to which process deposits 24 generated during processing can adhere, as shown for example in FIG. 1 a.
  • [0016]
    The Lavacoat™ textured surface 20 can be formed by generating an electromagnetic energy beam 40, such as an electron beam 40, and directing the beam onto the surface 20 of the component 22. While the electromagnetic energy beam is preferably an electron beam, it can also comprise protons, neutrons and X-rays and the like. The beam 40 is typically focused on a region of the surface 20 for a period of time, during which time the beam 40 interacts with the surface 20 to form the textured features 25 on the surface 20. It is believed that the beam 40 forms the features 25 by rapidly heating the region of the surface 20, typically to a melting temperature of the surface material. At least a portion of the surface material may even be evaporated or ablated from the surface 20 by the rapid heating. The rapid heating causes some of the surface material to be ejected outwards, which forms depressions 23 in the regions the material was ejected from, and protuberances 26 in areas where the ejected material re-deposits. After the desired features in the region are formed, the beam 40 is scanned to a different region of the component surface 20 to form features in the new region.
  • [0017]
    The electromagnetic energy beam 40 can be scanned across the surface 20 to form a desired pattern of textured features 25 on the surface 20, such as a honeycomb-like structure of depressions 23 and protuberances 26, as shown for example in FIG. 1 a. The features 25 formed by this method are typically macroscopically sized. For example, the depressions 23 can have a depth d as measured from a base level 28 of the surface 20 of from about 20 micrometers to about 1600 micrometers. A surface diameter w of the depressions 23 may be from about 120 micrometers to about 2600 micrometers and even from about 200 micrometers to about 2300 micrometers. The protuberances 26 can comprise a height h above the base surface 28 of from about 50 micrometers to about 1600 micrometers, and even from about 100 micrometers to about 1200 micrometers. The Lavacoat™ textured surface 20 can have an overall surface roughness average of from about 60 micrometers to about 100 micrometers, the roughness average of the surface 20 being defined as the mean of the absolute values of the displacements from the mean line of the features along the surface 20. The textured surface 20 can also be further roughened after scanning with the electromagnetic energy beam 40 to provide different levels of texture on the surface 20, as described for example in the patent applications to Popiolkowski et al. and West et al. that are incorporated by reference above. For example, the surface 20 can be grit blasted by propelling grit particles towards the surface 20 with pressurized gas, or can be chemically roughened, to form a relatively fine texture overlying the macroscopically sized features 25 on the surface 20. The roughened surface 20 improves the adhesion of process deposits 24 to reduce contamination of the processed substrates 104 a.
  • [0018]
    In one version, the textured surface 20 can be formed on a metal coating 30 on the component 22, as shown for example in FIG. 1 a. The metal coating 30 desirably comprises a material that is resistant to erosion by the energized gases provided to process a substrate 104 a or clean the process chamber 106, and is also desirably resistant to erosion from cleaning solutions that may be used to clean the component 20, such as acidic or basic cleaning solutions. The metal coating 30 can be formed on a surface 33 of an underlying structure 32 of the component 30 to protect the underlying structure 32. For example, the underlying structure 32 may comprise a first material having desired properties, such as desired thermal and mechanical properties, and the metal coating 30 may comprise a second material having higher erosion resistance than the first material. The metal coating 30 may also comprise a material that can be treated to provide a desired texture of the metal coating surface, such as for example a desired roughness or textured pattern on the surface 20, that could not otherwise be desirably provided by the material of the underlying structure 32. For example, the material of the metal coating may be selected to allow for a finer or rougher texturing of the metal coating surface 20. A suitable material for the metal coating 30 can be selected with respect to the substrate processing requirements to provide the desired properties, and can comprise for example at least one of stainless steel, copper, nickel, tantalum and titanium.
  • [0019]
    A material having suitable properties for the underlying structure 32 may be a metallic material, such as for example at least one of titanium, stainless steel; copper, tantalum and aluminum; and can also comprise a ceramic material, such as at least one of aluminum oxide, aluminum nitride, and quartz. The underlying structure is selected according to desired properties such as desired thermal and mechanical properties. For example, an underlying structure 32 comprising aluminum may be desirable because aluminum is typically a relatively cheap material having good thermal conductivity. An underlying structure 32 comprising stainless steel may provide good erosion resistance and thermal conductivity. An underlying structure 32 comprising titanium may provide a desired relatively low thermal coefficient of expansion. Also, an underlying structure 32 comprising copper may provide good thermal conductivity as well as a relatively low thermal coefficient of expansion. Underlying structures 32 comprising a ceramic material, such as aluminum oxide, may provide a desired level of thermal insulation and/or thermal conductivity, and a desired relatively low thermal coefficient of expansion. In one suitable embodiment, a metal coating 30 comprising stainless steel is formed over an underlying structure 32 comprising aluminum or titanium, such as a process kit or shield structure, to provide a component 22 having a textured surface 20 with improved erosion resistance while maintaining the desired overall mechanical and thermal properties of the component 22. In another suitable embodiment, a metal coating 30 comprising stainless steel is formed over an underlying structure 32 comprising aluminum oxide.
  • [0020]
    In one version, the metal coating 30 can be providing by spraying a coating of material over the surface 33 of the underlying component structure 32. Suitable spraying methods can include thermal spraying methods, such as for example at least one of HVOF (high velocity oxygen fuel), flame spraying, plasma spraying, twin wire or single wire arc spraying, welding methods such as TIG, and other thermal spraying methods, which are capable of forming well-bonded coatings. In a typical thermal spraying method, the coating material in powder or wire form is heated to a molten or near-molten state, for example by a torch. A pressurized gas is used to propel the coating material onto the surface 33 of the underlying structure 32. For example, in the HVOF method, an HVOF spray gun ignites an oxygen-fuel mixture to heat and at least partially melt the coating material as it is propelled towards the structure surface 33. A HVOF spray gun that may be suitable for forming the metal coating 30 is the HVOF spray gun available from Sulzer Metco Holding AG in Winterthur, Switzerland. Alternatively, the metal coating 30 can be formed by other methods, such as by electroplating metal coating material on the underlying structure 32, or by a physical or chemical vapor deposition method.
  • [0021]
    The metal coating 30 desirably comprises a thickness that is sufficiently high to provide good erosion resistance and allow for the formation of the textured features 25 on the surface 20 of the coating 30. The metal coating 30 is desirably also sufficiently thin to provide good adhesion of the coating 30 to the underlying structure 32 to inhibit spalling or flaking of the coating 30 from the structure. A suitable thickness may be a thickness of the metal coating 30 may from about 120 micrometers to about 2600 micrometers, such as from about 500 micrometers to about 1300 micrometers. The metal coating 30 can be formed over substantially the entire surface 33 of the underlying structure 32, or on selected portions of the structure surface 33 that are, for example, especially susceptible to erosion, or that tend to accumulate large quantities of process deposits 24. Once the metal coating 30 has been formed, the coating 30 can be textured, for example by scanning an electron beam 40 across the surface 20 of the coating 30, to form the textured features 25 that are capable of collecting process deposits during the processing of substrates 104 a. The textured features 25 are desirably formed substantially entirely in the metal coating 30, and substantially without exposing the underlying structure 32, as shown for example in FIG. 1 a.
  • [0022]
    The component 22 comprising the metal coating 30 having the textured surface 20 can be cleaned after processing a predetermined number of substrates 104 a to remove process deposits 24 that have accumulated on the textured surface 20, such as tantalum-containing deposits. For example, the textured surface 20 of the component 22 can be immersed in a cleaning solution, such as an acidic solution of 20% by weight HF and 80% by weight HNO3, to clean the process deposits 24. Any exposed regions of the surface 33 of the underlying structure 32 that are not covered by the metal coating 30 can be masked with a protective material, such as a polyester-based material, to protect the regions from erosion by the cleaning solution. An example of a protective material may be polyester tape (plater's tape) commercially available from 3M™, United States. Other cleaning solutions and steps may also be provided, such as rinsing with de-ionized water, ultrasonicating, baking or immersing in other chemical cleaning solutions.
  • [0023]
    The component 22 having the metal coating 30 with the textured surface 20 provides improved results over components 22 without the metal coating 30. For example, a component 22 having a metal coating 30 with an electron beam textured surface 20 that comprises stainless steel, and that is formed over an underlying structure 32 comprising aluminum or titanium, can be cleaned in a cleaning solution comprising HF and HNO3 and recycled for re-use in the process chamber 106 at least about 10 times, while continuing to provide good processing results in the chamber 106. In contrast, a component 22 without a metal coating 30, such as a component 22 consisting of aluminum and having an electron beam textured surface 20, is typically capable of being cleaned and re-cycled for re-use in the process chamber 106 no more than about 3 times, before the erosion of the component 22 becomes too severe to provide good processing results.
  • [0024]
    An example of a suitable process chamber 106 having a component 22 with a metal coating 30 and electron beam textured features 25 and is shown in FIG. 2. The chamber 106 can be a part of a multi-chamber platform (not shown) having a cluster of interconnected chambers connected by a robot arm mechanism that transfers substrates 104 a between the chambers 106. In the version shown, the process chamber 106 comprises a sputter deposition chamber, also called a physical vapor deposition or PVD chamber, which is capable of sputter depositing material on a substrate 104 a, such as one or more of tantalum, tantalum nitride, titanium, titanium nitride, copper, tungsten, tungsten nitride and aluminum. The chamber 106 comprises enclosure walls 118 that enclose a process zone 109, and that include sidewalls 164, a bottom wall 166, and a ceiling 168. A support ring 130 can be arranged between the sidewalls 164 and ceiling 168 to support the ceiling 168. Other chamber walls can include one or more shields 120 that shield the enclosure walls 118 from the sputtering environment.
  • [0025]
    The chamber 106 comprises a substrate support 114 to support substrates 104 a in the sputter deposition chamber 106. The substrate support 114 may be electrically floating or may comprise an electrode 170 that is biased by a power supply 172, such as an RF power supply. The substrate support 114 can also support other wafers 104 such as a moveable shutter disk 104 b that can protect the upper surface 134 of the support 114 when the substrate 104 a is not present. In operation, the substrate 104 a is introduced into the chamber 106 through a substrate loading inlet (not shown) in a sidewall 164 of the chamber 106 and placed on the support 114. The support 114 can be lifted or lowered by support lift bellows and a lift finger assembly (not shown) can be used to lift and lower the substrate onto the support 114 during transport of the substrate 104 a into and out of the chamber 106.
  • [0026]
    The support 114 may also comprise a process kit 139 one or more rings, such as a cover ring 126 and a deposition ring 128, which cover at least a portion of the upper surface 134 of the support 114 to inhibit erosion of the support 114. In one version, the deposition ring 128 at least partially surrounds the substrate 104 a to protect portions of the support 114 not covered by the substrate 104 a. The cover ring 126 encircles and covers at least a portion of the deposition ring 128, and reduces the deposition of particles onto both the deposition ring 128 and the underlying support 114.
  • [0027]
    A process gas, such as a sputtering gas, is introduced into the chamber 106 through a gas delivery system 112 that includes a process gas supply comprising one or more gas sources 174 that each feed a conduit 176 having a gas flow control valve 178, such as a mass flow controller, to pass a set flow rate of the gas therethrough. The conduits 176 can feed the gases to a mixing manifold (not shown) in which the gases are mixed to from a desired process gas composition. The mixing manifold feeds a gas distributor 180 having one or more gas outlets 182 in the chamber 106. The process gas may comprise a non-reactive gas, such as argon or xenon, which is capable of energetically impinging upon and sputtering material from a target. The process gas may also comprise a reactive gas, such as one or more of an oxygen-containing gas and a nitrogen-containing gas, that are capable of reacting with the sputtered material to form a layer on the substrate 104 a. Spent process gas and byproducts are exhausted from the chamber 106 through an exhaust 122 which includes one or more exhaust ports 184 that receive spent process gas and pass the spent gas to an exhaust conduit 186 in which there is a throttle valve 188 to control the pressure of the gas in the chamber 106. The exhaust conduit 186 feeds one or more exhaust pumps 190. Typically, the pressure of the sputtering gas in the chamber 106 is set to sub-atmospheric levels.
  • [0028]
    The sputtering chamber 106 further comprises a sputtering target 124 facing a surface 105 of the substrate 104 a, and comprising material to be sputtered onto the substrate 104 a, such as for example at least one of tantalum and tantalum nitride. The target 124 is electrically isolated from the chamber 106 by an annular insulator ring 132, and is connected to a power supply 192. The sputtering chamber 106 also has a shield 120 to protect a wall 118 of the chamber 106 from sputtered material. The shield 120 can comprise a wall-like cylindrical shape having upper and lower shield sections 120 a, 120 b that shield the upper and lower regions of the chamber 106. In the version shown in FIG. 2, the shield 120 has an upper section 120 a mounted to the support ring 130 and a lower section 120 b that is fitted to the cover ring 126. A clamp shield 141 comprising a clamping ring can also be provided to clamp the upper and lower shield sections 120 a,b together. Alternative shield configurations, such as inner and outer shields, can also be provided. In one version, one or more of the power supply 192, target 124, and shield 120, operate as a gas energizer 116 that is capable of energizing the sputtering gas to sputter material from the target 124. The power supply 192 applies a bias voltage to the target 124 with respect to the shield 120. The electric field generated in the chamber 106 from the applied voltage energizes the sputtering gas to form a plasma that energetically impinges upon and bombards the target 124 to sputter material off the target 124 and onto the substrate 104 a. The support 114 having the electrode 170 and support electrode power supply 172 may also operate as part of the gas energizer 116 by energizing and accelerating ionized material sputtered from the target 124 towards the substrate 104 a. Furthermore, a gas energizing coil 135 can be provided that is powered by a power supply 192 and that is positioned within the chamber 106 to provide enhanced energized gas characteristics, such as improved energized gas density. The gas energizing coil 135 can be supported by a coil support 137 that is attached to a shield 120 or other wall in the chamber 106.
  • [0029]
    The chamber 106 can be controlled by a controller 194 that comprises program code having instruction sets to operate components of the chamber 106 to process substrates 104 a in the chamber 106. For example, the controller 194 can comprise a substrate positioning instruction set to operate one or more of the substrate support 114 and substrate transport to position a substrate 104 a in the chamber 106; a gas flow control instruction set to operate the flow control valves 178 to set a flow of sputtering gas to the chamber 106; a gas pressure control instruction set to operate the exhaust throttle valve 188 to maintain a pressure in the chamber 106; a gas energizer control instruction set to operate the gas energizer 116 to set a gas energizing power level; a temperature control instruction set to control temperatures in the chamber 106; and a process monitoring instruction set to monitor the process in the chamber 106.
  • [0030]
    Although exemplary embodiments of the present invention are shown and described, those of ordinary skill in the art may devise other embodiments which incorporate the present invention, and which are also within the scope of the present invention. For example, the features 25 can be formed on the surface 20 by means other than those specifically described. Also, the metal coating 30 may comprise materials other than those described, and may be formed by alternative suitable methods. Furthermore, relative or positional terms shown with respect to the exemplary embodiments are interchangeable. Therefore, the appended claims should not be limited to the descriptions of the preferred versions, materials, or spatial arrangements described herein to illustrate the invention.
Patent Citations
Cited PatentFiling datePublication dateApplicantTitle
US2705500 *Nov 4, 1953Apr 5, 1955Deer Leon LCleaning aluminum
US3117883 *Sep 23, 1960Jan 14, 1964Glidden CoPigment for aqueous latex emulsion paints
US3457151 *Oct 27, 1966Jul 22, 1969Solutec CorpElectrolytic cleaning method
US3522083 *Oct 17, 1968Jul 28, 1970Grace W R & CoPhosphonitrilic laminating and molding resins
US3565771 *Oct 16, 1967Feb 23, 1971Shipley CoEtching and metal plating silicon containing aluminum alloys
US3679460 *Oct 8, 1970Jul 25, 1972Union Carbide CorpComposite wear resistant material and method of making same
US4100252 *Mar 28, 1977Jul 11, 1978Engelhard Minerals & Chemicals CorporationMetal extraction process
US4419201 *Aug 24, 1981Dec 6, 1983Bell Telephone Laboratories, IncorporatedApparatus and method for plasma-assisted etching of wafers
US4491496 *Jan 4, 1984Jan 1, 1985Commissariat A L'energie AtomiqueEnclosure for the treatment, and particularly for the etching of substrates by the reactive plasma method
US4673554 *Dec 13, 1985Jun 16, 1987Sumitomo Chemical Company, LimitedMethod of purifying tantalum
US4713119 *Mar 20, 1986Dec 15, 1987Stauffer Chemical CompanyProcess for removing alkali metal aluminum silicate scale deposits from surfaces of chemical process equipment
US4717462 *Oct 24, 1986Jan 5, 1988Hitachi, Ltd.Sputtering apparatus
US4721792 *Jan 30, 1986Jan 26, 1988Sumitomo Chemical Company, LimitedN,N',N",N'"-tetrakis(substituted benzyl)-acetylenecarbamide derivatives
US4756322 *Mar 4, 1986Jul 12, 1988Lami Philippe AMeans for restoring the initial cleanness conditions in a quartz tube used as a reaction chamber for the production of integrated circuits
US4959105 *Mar 14, 1990Sep 25, 1990Fred NeidifferAluminium cleaning composition and process
US5009966 *Sep 19, 1989Apr 23, 1991Diwakar GargHard outer coatings deposited on titanium or titanium alloys
US5032469 *Dec 20, 1989Jul 16, 1991Battelle Memorial InstituteMetal alloy coatings and methods for applying
US5064511 *May 24, 1990Nov 12, 1991Diaprint S.R.L.Electrochemical graining of aluminum or aluminum alloy surfaces
US5104501 *Jun 8, 1990Apr 14, 1992Daicel Chemical Industries, Ltd.Electrolytic cleaning method and electrolytic cleaning solution for stamper
US5164016 *Feb 5, 1991Nov 17, 1992Ugine, Aciers De Chatillon Et GueugnonMethod for pickling or cleaning materials of steel, in particular stainless steel
US5180322 *Aug 22, 1991Jan 19, 1993Dainippon Screen Mfg. Co., Ltd.Manufacturing process of shadow mask and shadow mask plate therefor
US5180563 *Oct 24, 1989Jan 19, 1993Gte Products CorporationTreatment of industrial wastes
US5202008 *Jun 8, 1992Apr 13, 1993Applied Materials, Inc.Method for preparing a shield to reduce particles in a physical vapor deposition chamber
US5215624 *Dec 16, 1991Jun 1, 1993Aluminum Company Of AmericaMilling solution and method
US5248386 *Mar 10, 1992Sep 28, 1993Aluminum Company Of AmericaMilling solution and method
US5338367 *Nov 18, 1992Aug 16, 1994Ugine, Aciers De Chatillon Et GueugnonPickling process in an acid bath of metallic products containing titanium or at least one chemical element of the titanium family
US5366585 *Jan 28, 1993Nov 22, 1994Applied Materials, Inc.Method and apparatus for protection of conductive surfaces in a plasma processing reactor
US5391275 *Aug 11, 1992Feb 21, 1995Applied Materials, Inc.Method for preparing a shield to reduce particles in a physical vapor deposition chamber
US5401319 *Aug 27, 1992Mar 28, 1995Applied Materials, Inc.Lid and door for a vacuum chamber and pretreatment therefor
US5474649 *Mar 8, 1994Dec 12, 1995Applied Materials, Inc.Plasma processing apparatus employing a textured focus ring
US5509558 *Jul 15, 1994Apr 23, 1996Kabushiki Kaisha ToshibaMetal oxide resistor, power resistor, and power circuit breaker
US5520740 *Jun 2, 1995May 28, 1996Canon Kabushiki KaishaProcess for continuously forming a large area functional deposited film by microwave PCVD method and apparatus suitable for practicing the same
US5536723 *Oct 6, 1994Jul 16, 1996Brigham & Women's HospitalS-nitroso derivatives of hydrazinoacetic acids, 1-[(acylthio and (mercapto)-1-oxoalkyl]-1,2,34-Tetrahydroquinoline-2-carboxylic acids and alanyl prolines and isoquinolines
US5549802 *Oct 24, 1994Aug 27, 1996Applied Materials, Inc.Cleaning of a PVD chamber containing a collimator
US5587039 *Sep 12, 1994Dec 24, 1996Varian Associates, Inc.Plasma etch equipment
US5660640 *Jun 16, 1995Aug 26, 1997Joray CorporationMethod of removing sputter deposition from components of vacuum deposition equipment
US5714010 *May 25, 1995Feb 3, 1998Canon Kabushiki KaishaProcess for continuously forming a large area functional deposited film by a microwave PCVD method and an apparatus suitable for practicing the same
US5762748 *Jun 5, 1996Jun 9, 1998Applied Materials, IncLid and door for a vacuum chamber and pretreatment therefor
US5808270 *Feb 14, 1997Sep 15, 1998Ford Global Technologies, Inc.Plasma transferred wire arc thermal spray apparatus and method
US5840434 *May 2, 1996Nov 24, 1998Hitachi, Ltd.Thermal stress relaxation type ceramic coated heat-resistant element and method for producing the same
US5858100 *Apr 4, 1995Jan 12, 1999Semiconductor Process Co., Ltd.Substrate holder and reaction apparatus
US5879523 *Sep 29, 1997Mar 9, 1999Applied Materials, Inc.Ceramic coated metallic insulator particularly useful in a plasma sputter reactor
US5903428 *Sep 25, 1997May 11, 1999Applied Materials, Inc.Hybrid Johnsen-Rahbek electrostatic chuck having highly resistive mesas separating the chuck from a wafer supported thereupon and method of fabricating same
US5910338 *Mar 17, 1998Jun 8, 1999Applied Materials, Inc.Surface preparation to enhance adhesion of a dielectric layer
US5916378 *Mar 11, 1997Jun 29, 1999Wj Semiconductor Equipment Group, Inc.Method of reducing metal contamination during semiconductor processing in a reactor having metal components
US5916454 *Aug 30, 1996Jun 29, 1999Lam Research CorporationMethods and apparatus for reducing byproduct particle generation in a plasma processing chamber
US5939146 *Dec 11, 1997Aug 17, 1999The Regents Of The University Of CaliforniaMethod for thermal spraying of nanocrystalline coatings and materials for the same
US5953827 *Nov 5, 1997Sep 21, 1999Applied Materials, Inc.Magnetron with cooling system for process chamber of processing system
US5967047 *Dec 19, 1994Oct 19, 1999Agfa-Gevaert AgThermal process for applying hydrophilic layers to hydrophobic substrates for offset printing plates
US5976327 *Dec 12, 1997Nov 2, 1999Applied Materials, Inc.Step coverage and overhang improvement by pedestal bias voltage modulation
US6015465 *Apr 8, 1998Jan 18, 2000Applied Materials, Inc.Temperature control system for semiconductor process chamber
US6051114 *Jun 23, 1997Apr 18, 2000Applied Materials, Inc.Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition
US6059945 *Oct 3, 1998May 9, 2000Applied Materials, Inc.Sputter target for eliminating redeposition on the target sidewall
US6120621 *Jul 8, 1996Sep 19, 2000Alcan International LimitedCast aluminum alloy for can stock and process for producing the alloy
US6120640 *Dec 19, 1996Sep 19, 2000Applied Materials, Inc.Boron carbide parts and coatings in a plasma reactor
US6152071 *Dec 10, 1997Nov 28, 2000Canon Kabushiki KaishaHigh-frequency introducing means, plasma treatment apparatus, and plasma treatment method
US6306489 *May 7, 1998Oct 23, 2001Heraeus Quarzglas GmbhQuartz glass component for a reactor housing a method of manufacturing same and use thereof
US6306498 *Dec 21, 1998Oct 23, 2001Asahi Kasei Kabushiki KaishaFibers for electric flocking and electrically flocked article
US6338906 *Nov 11, 1999Jan 15, 2002Coorstek, Inc.Metal-infiltrated ceramic seal
US6379575 *Oct 21, 1997Apr 30, 2002Applied Materials, Inc.Treatment of etching chambers using activated cleaning gas
US6383459 *Aug 31, 2000May 7, 2002Osram Sylvania Inc.Method for purifying a tantalum compound using a fluoride compound and sulfuric acid
US6394023 *Mar 27, 2000May 28, 2002Applied Materials, Inc.Process kit parts and method for using same
US6444083 *Jun 30, 1999Sep 3, 2002Lam Research CorporationCorrosion resistant component of semiconductor processing equipment and method of manufacturing thereof
US6454870 *Nov 26, 2001Sep 24, 2002General Electric Co.Chemical removal of a chromium oxide coating from an article
US6555471 *Jul 2, 2001Apr 29, 2003Micron Technology, Inc.Method of making a void-free aluminum film
US6565984 *May 28, 2002May 20, 2003Applied Materials Inc.Clean aluminum alloy for semiconductor processing equipment
US6566161 *Nov 20, 2000May 20, 2003Honeywell International Inc.Tantalum sputtering target and method of manufacture
US6592830 *Oct 20, 1999Jul 15, 2003Aleksandr KrupinTreating niobium and or tantalum containing raw materials
US6777045 *Jun 27, 2001Aug 17, 2004Applied Materials Inc.Chamber components having textured surfaces and method of manufacture
US6902627 *Dec 19, 2003Jun 7, 2005Applied Materials, Inc.Cleaning chamber surfaces to recover metal-containing compounds
US6902628 *Nov 25, 2002Jun 7, 2005Applied Materials, Inc.Method of cleaning a coated process chamber component
US6933025 *Mar 24, 2004Aug 23, 2005Applied Materials, Inc.Chamber having components with textured surfaces and method of manufacture
US7026009 *Mar 27, 2002Apr 11, 2006Applied Materials, Inc.Evaluation of chamber components having textured coatings
US20010033706 *Mar 16, 2001Oct 25, 2001Yuji ShimomuraRolling sliding member, process for the production thereof and rolling sliding unit
US20020086118 *Dec 29, 2000Jul 4, 2002Chang Christopher C.Low contamination plasma chamber components and methods for making the same
US20020090464 *Nov 20, 2001Jul 11, 2002Mingwei JiangSputter chamber shield
US20030026917 *Jun 27, 2001Feb 6, 2003Shyh-Nung LinProcess chamber components having textured internal surfaces and method of manufacture
US20030047464 *Jul 27, 2001Mar 13, 2003Applied Materials, Inc.Electrochemically roughened aluminum semiconductor processing apparatus surfaces
US20030108680 *Jul 9, 2002Jun 12, 2003Maurice GellDuplex coatings and bulk materials, and methods of manufacture thereof
US20030116276 *Dec 21, 2001Jun 26, 2003Weldon Edwin CharlesMethods of roughening a ceramic surface
US20030118731 *Dec 21, 2001Jun 26, 2003Applied Materials, Inc.Method of fabricating a coated process chamber component
US20030136428 *Jan 23, 2002Jul 24, 2003Applied Materials, Inc.Cleaning process residues on a process chamber component
US20030170486 *Mar 8, 2002Sep 11, 2003David AustinCopper clad aluminum strips and a process for making copper clad aluminum strips
US20030173526 *Mar 13, 2002Sep 18, 2003Applied Materials, Inc.Method of surface texturizing
US20030185965 *Mar 27, 2002Oct 2, 2003Applied Materials, Inc.Evaluation of chamber components having textured coatings
US20030196890 *Apr 19, 2002Oct 23, 2003Applied Materials, Inc.Reducing particle generation during sputter deposition
US20030221702 *May 28, 2002Dec 4, 2003Peebles Henry C.Process for cleaning and repassivating semiconductor equipment parts
US20040045574 *Aug 10, 2001Mar 11, 2004Samantha TanSystem and method for cleaning semiconductor fabrication equipment parts
US20040056211 *Jul 17, 2003Mar 25, 2004Applied Materials, Inc.Method of surface texturizing
US20040099285 *Nov 25, 2002May 27, 2004Applied Materials, Inc.Method of cleaning a coated process chamber component
US20040180158 *Mar 24, 2004Sep 16, 2004Applied Materials, Inc.Chamber having components with textured surfaces and method of manufacture
US20050028838 *May 13, 2004Feb 10, 2005Karl BruecknerCleaning tantalum-containing deposits from process chamber components
US20060110620 *Nov 24, 2004May 25, 2006Applied Materials, Inc.Process chamber component with layered coating and method
USH2087 *May 19, 1998Nov 4, 2003H. C. Starck, Inc.Pickling of refractory metals
USRE31198 *Sep 23, 1980Apr 5, 1983Amchem Products, Inc.Method for cleaning aluminum at low temperatures
Referenced by
Citing PatentFiling datePublication dateApplicantTitle
US7554052 *Jul 29, 2005Jun 30, 2009Applied Materials, Inc.Method and apparatus for the application of twin wire arc spray coatings
US7579067Nov 24, 2004Aug 25, 2009Applied Materials, Inc.Process chamber component with layered coating and method
US7762114Sep 9, 2005Jul 27, 2010Applied Materials, Inc.Flow-formed chamber component having a textured surface
US7901552Oct 5, 2007Mar 8, 2011Applied Materials, Inc.Sputtering target with grooves and intersecting channels
US7910218Oct 22, 2003Mar 22, 2011Applied Materials, Inc.Cleaning and refurbishing chamber components having metal coatings
US7942969Sep 19, 2007May 17, 2011Applied Materials, Inc.Substrate cleaning chamber and components
US7964085Jun 17, 2004Jun 21, 2011Applied Materials, Inc.Electrochemical removal of tantalum-containing materials
US7981262Jan 29, 2007Jul 19, 2011Applied Materials, Inc.Process kit for substrate processing chamber
US8021743Aug 24, 2009Sep 20, 2011Applied Materials, Inc.Process chamber component with layered coating and method
US8617672Jul 13, 2005Dec 31, 2013Applied Materials, Inc.Localized surface annealing of components for substrate processing chambers
US8647484Nov 12, 2006Feb 11, 2014Applied Materials, Inc.Target for sputtering chamber
US8939705Feb 25, 2014Jan 27, 2015Siemens Energy, Inc.Turbine abradable layer with progressive wear zone multi depth grooves
US8939706Feb 25, 2014Jan 27, 2015Siemens Energy, Inc.Turbine abradable layer with progressive wear zone having a frangible or pixelated nib surface
US8939707Feb 25, 2014Jan 27, 2015Siemens Energy, Inc.Turbine abradable layer with progressive wear zone terraced ridges
US8939716Feb 25, 2014Jan 27, 2015Siemens AktiengesellschaftTurbine abradable layer with nested loop groove pattern
US8968536Jun 18, 2007Mar 3, 2015Applied Materials, Inc.Sputtering target having increased life and sputtering uniformity
US8980045May 17, 2011Mar 17, 2015Applied Materials, Inc.Substrate cleaning chamber and components
US9068273Jun 10, 2011Jun 30, 2015Quantum Global Technologies LLCElectrochemical removal of tantalum-containing materials
US9127362Oct 27, 2006Sep 8, 2015Applied Materials, Inc.Process kit and target for substrate processing chamber
US9151175Feb 25, 2014Oct 6, 2015Siemens AktiengesellschaftTurbine abradable layer with progressive wear zone multi level ridge arrays
US9243511Feb 25, 2014Jan 26, 2016Siemens AktiengesellschaftTurbine abradable layer with zig zag groove pattern
US9249680Feb 25, 2014Feb 2, 2016Siemens Energy, Inc.Turbine abradable layer with asymmetric ridges or grooves
US9481608Nov 22, 2013Nov 1, 2016Applied Materials, Inc.Surface annealing of components for substrate processing chambers
US20060110620 *Nov 24, 2004May 25, 2006Applied Materials, Inc.Process chamber component with layered coating and method
US20070026159 *Jul 29, 2005Feb 1, 2007The Boc Group, Inc.Method and apparatus for the application of twin wire arc spray coatings
US20070170052 *Nov 12, 2006Jul 26, 2007Applied Materials, Inc.Target for sputtering chamber
US20080178801 *Jan 29, 2007Jul 31, 2008Applied Materials, Inc.Process kit for substrate processing chamber
US20080268281 *Apr 27, 2007Oct 30, 2008Quan BaiShield Components With Enhanced Thermal and Mechanical Stability
US20100055298 *Aug 28, 2008Mar 4, 2010Applied Materials, Inc.Process kit shields and methods of use thereof
US20100086805 *Aug 24, 2009Apr 8, 2010Applied Materials, Inc.Process chamber component with layered coating and method
US20100107982 *Jul 11, 2007May 6, 2010Kabushiki Kaisha ToshibaVacuum deposition apparatus part and vacuum deposition apparatus using the part
US20100108641 *Sep 30, 2009May 6, 2010Applied Materials, Inc.Lavacoat pre-clean and pre-heat
US20110220285 *Feb 11, 2011Sep 15, 2011Morgan Advanced Ceramics, Inc.Methods and systems for texturing ceramic components
US20120258280 *Apr 9, 2012Oct 11, 2012Applied Materials, Inc.Extended life textured chamber components and method for fabricating same
EP2159302A1 *Aug 25, 2008Mar 3, 2010Applied Materials, Inc.Coating chamber with a moveable shield
EP3047516A4 *Aug 26, 2014Mar 15, 2017Applied Materials IncGeometries and patterns for surface texturing to increase deposition retention
WO2010023109A1 *Aug 13, 2009Mar 4, 2010Applied Materials Inc.Coating chamber with a moveable shield
WO2016153343A1Mar 21, 2016Sep 29, 2016Asm International N.V.Method for cleaning deposition apparatus
Classifications
U.S. Classification428/457, 428/98
International ClassificationB32B15/04, B32B5/00
Cooperative ClassificationY10T428/31678, C23C16/4404, H01J2237/022, H01L21/68757, H01L21/6875, Y10T428/24, H01J37/32862, H01J37/32871, C23C14/564, H01J37/16, H01J37/32504
European ClassificationH01J37/32O18F2, H01J37/32O18F4, H01J37/32O4D6, C23C14/56D, C23C16/44A4, H01L21/687S12, H01L21/687S10, H01J37/16
Legal Events
DateCodeEventDescription
Nov 16, 2004ASAssignment
Owner name: APPLIED MATERIALS, INC., CALIFORNIA
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BRUECKNER, KARL;SCHWEITZER, MARC O DONNELL;POPIOLKOWSKI,ALAN;AND OTHERS;REEL/FRAME:016007/0431;SIGNING DATES FROM 20041103 TO 20041115