US 20060121689 A1
The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first precursor gas is introduced to an enclosure at a first enclosure pressure. The pressure within the enclosure is reduced toga second enclosure pressure while introducing a purge gas at a first flow rate. The second enclosure pressure may approach or be equal to a steady-state base pressure of the processing system at the first flow rate. After reducing the pressure, the purge gas flow may be increased to a second flow rate and the enclosure pressure may be increased to a third enclosure pressure. Thereafter, a flow of a second precursor gas may be introduced with a pressure within the enclosure at a fourth enclosure pressure; the third enclosure pressure is desirably within about 10 percent of the fourth enclosure pressure.
33. A microfeature workpiece processing system comprising:
an enclosure adapted to receive a plurality of microfeature workpieces for simultaneous treatment;
a gas supply adapted to selectively deliver a first gaseous precursor, a second gaseous precursor, and a purge gas to the enclosure;
a vacuum; and
a programmable controller operatively coupled to the gas supply and the vacuum, the controller being programmed to:
introduce a flow of the first precursor gas to the enclosure with a pressure within the enclosure at a first enclosure pressure;
terminate the flow of the first precursor;
reduce pressure within the enclosure to a second, lower enclosure pressure in a pump-down process, the pump-down process comprising operating the vacuum source to withdraw gas from the enclosure while introducing the purge gas from the gas supply to the enclosure at a first flow rate of no greater than about 250 sccm for a first period of time; and
after the pump-down process, purge the enclosure in a purge process, the purge process comprising introducing the purge gas from the gas supply to the enclosure at a second flow rate of at least about 1000 sccm for a second period of time and allowing the enclosure pressure to increase to a third enclosure pressure that is greater than the second enclosure pressure.
34. The microfeature workpiece processing system of
35. The microfeature workpiece processing system of
36. The microfeature workpiece processing system of
37. The microfeature workpiece processing system of
38. The microfeature workpiece processing system of
39. The microfeature workpiece processing system of
40. The microfeature workpiece processing system of
41. The microfeature workpiece processing system of
terminate the flow of the second precursor gas;
repeating the pump-down process; then
repeating the purge process.
42. The microfeature workpiece processing system of
terminate the flow of the second precursor gas;
reduce pressure within the enclosure to a fifth enclosure pressure while introducing a flow of the purge gas into the enclosure from the gas supply at a third flow rate, wherein the fifth enclosure pressure differs from the second enclosure pressure or the third flow rate differs from the first flow rate; and
increase flow of the purge gas to a fourth flow rate and increasing the pressure within the enclosure to a sixth enclosure pressure, a difference between the sixth enclosure pressure and the fourth enclosure pressure being about 0-10% of the fourth enclosure pressure.
The present invention is related to equipment and methods for processing microfeature workpieces, e.g., semiconductor wafers. Aspects of the invention have particular utility in connection with batch deposition of materials on microfeature workpieces by atomic layer deposition.
Thin film deposition techniques are widely used in the manufacturing of microfeatures to form a coating on a workpiece that closely conforms to the surface topography. In the context of microelectronic components, for example, the size of the individual components in the devices on a wafer is constantly decreasing, and the number of layers in the devices is increasing. As a result, the density of components and the aspect ratios of depressions (e.g., the ratio of the depth to the size of the opening) are increasing. The size of such wafers is also increasing to provide more real estate for forming more dies (i.e., chips) on a single wafer. Many fabricators are currently transitioning from 200 mm to 300 mm workpieces, and even larger workpieces will likely be used in the future. Thin film deposition techniques accordingly strive to produce highly uniform conformal layers that cover the sidewalls, bottoms, and corners in deep depressions that have very small openings.
One widely used thin film deposition technique is chemical vapor deposition (CVD). In a CVD system, one or more precursors that are capable of reacting to form a solid thin film are mixed in a gas or vapor state, and then the precursor mixture is presented to the surface of the workpiece. The surface of the workpiece catalyzes the reaction between the precursors to form a solid thin film at the workpiece surface. A common way to catalyze the reaction at the surface of the workpiece is to heat the workpiece to a temperature that causes the reaction.
Although CVD techniques are useful in many applications, they also have several drawbacks. For example, if the precursors are not highly reactive, then a high workpiece temperature is needed to achieve a reasonable deposition rate. Such high temperatures are not typically desirable because heating the workpiece can be detrimental to the structures and other materials already formed on the workpiece. Implanted or doped materials, for example, can migrate within silicon workpieces at higher temperatures. On the other hand, if more reactive precursors are used so that the workpiece temperature can be lower, then reactions may occur prematurely in the gas phase before reaching the intended surface of the workpiece. This is undesirable because the film quality and uniformity may suffer, and also because it limits the types of precursors that can be used.
Atomic layer deposition (ALD) is another thin film deposition technique.
One drawback of ALD processing is that it has a relatively low throughput compared to CVD techniques. For example, ALD processing typically takes several seconds to perform each A-purge-B-purge cycle. This results in a total process time of several minutes to form a single thin layer of only 60 Å. In contrast to ALD processing, CVD techniques only require about one minute to form a 60 Å thick layer. In single-wafer processing chambers, ALD processes can be 500%-2000% longer than corresponding single-wafer CVD processes. The low throughput of existing single-wafer ALD techniques limits the utility of the technology in its current state because ALD may be a bottleneck in the overall manufacturing process.
One promising solution to increase the throughput of ALD processing is processing a plurality of wafers (e.g., 20-250) simultaneously in a batch process. As suggested in International Publication No. WO 02/095807, the entirety of which is incorporated herein by reference, such batch processes typically stack the plurality of wafers in a wafer holder that is positioned in an enclosure of a processing system. To increase the number of wafers that can be treated at one time and concomitantly increase the throughput of the system, the wafers are typically held in a relatively close spaced-apart relationship. Unfortunately, this close spacing between adjacent wafers hinders the flow of gas adjacent the surface of the wafer, particularly adjacent the center of each wafer.
In conventional single-wafer ALD systems, a gas “showerhead” will be spaced in relatively close, parallel proximity with substantially the entirety of the wafer surface. This facilitates thorough, effective purging of the excess precursors A and B. In a batch ALD system, however, gas is typically introduced to flow longitudinally alongside the wafer holder. As a consequence, gas exchange between the wafers takes place, in large part, by gas diffusion rather than a significant flow rate of gas across the wafer surface. To enhance the removal of excess precursor between the wafers, conventional batch ALD processing typically involves introducing a significant quantity of a purge gas to dilute the remaining precursor, then drawing a vacuum on the enclosure to remove the diluted gas. Unfortunately, this addition of excess purge gas and subsequent pump-down can take a relatively long period of time, further reducing the throughput of the batch ALD processing system.
Various embodiments of the present invention provide microfeature workpiece holders, systems including processing chambers, and methods for depositing materials onto microfeature workpieces. Many specific details of the invention are described below with reference to reactors for depositing materials onto microfeature workpieces. The term “microfeature workpiece” is used throughout to include substrates upon which and/or in which microelectronic devices, micromechanical devices, data storage elements, read/write components, and other devices are fabricated. For example, microfeature workpieces can be semiconductor wafers such as silicon or gallium arsenide wafers, glass substrates, insulative substrates, and many other types of materials. The microfeature workpieces typically have submicron features with dimensions of 0.05 microns or greater. Furthermore, the term “gas” is used throughout to include any form of matter that has no fixed shape and will conform in volume to the space available, which specifically includes vapors (i.e., a gas having a temperature less than the critical temperature so that it may be liquefied or solidified by compression at a constant temperature). Several embodiments in accordance with the invention are set forth in
One embodiment of the invention provides a method of depositing a material on a microfeature workpiece. In accordance with this method, a plurality of microfeature workpieces are positioned in a spaced relationship within an enclosure. A flow of a first precursor gas is introduced to the enclosure at a first enclosure pressure. The flow of the first precursor is terminated and pressure within the enclosure is reduced to a second enclosure pressure while introducing a flow of a purge gas at a first flow rate. The processing system has a base pressure at the first flow rate. A difference between the second enclosure pressure and the first enclosure pressure is at least 90 percent of the difference between the base pressure and the first enclosure pressure. After reducing the pressure within the enclosure to the second enclosure pressure, the flow rate of the purge gas is increased to a second flow rate and the pressure within the enclosure is increased to a third enclosure pressure. After increasing the pressure within the enclosure to the third enclosure pressure, a flow of a second precursor gas is introduced to the enclosure at a fourth enclosure pressure. The third and fourth enclosure pressures may be substantially the same, with any difference between the third and fourth enclosure pressures being about 0-10 percent of the fourth enclosure pressure.
A method in accordance with another embodiment of the invention may also be used to deposit a material on a microfeature workpiece. In this method, a plurality of microfeature workpieces, each of which has a surface, is positioned within an enclosure. The surfaces of the microfeature workpieces are exposed to a first precursor gas at a first enclosure pressure to allow at least a monolayer of the first precursor gas to be adsorbed on the surfaces of the microfeature workpieces. Pressure within the enclosure is reduced to a second, lower enclosure pressure via a pump-down process. The pump-down process comprises withdrawing gas from the enclosure, e.g., with a vacuum, while introducing a purge gas at a first flow rate of no greater than about 250 sccm for a first period of time. This pump-down process reduces the partial pressure of the first precursor gas within the enclosure. After the pump-down process, the enclosure is purged in a purge process that includes introducing the purge gas at a second flow rate of at least about 1000 sccm for a second period of time and allowing the enclosure pressure to increase to a third enclosure pressure that is greater than the second enclosure pressure. After the purge process, the surfaces of the microfeature workpieces may be exposed to a second precursor gas at a fourth enclosure pressure. The third and fourth enclosure pressures may be substantially the same, with any difference between the third and fourth enclosure pressures desirably being about 0-10 percent of the fourth enclosure pressure.
Another embodiment of the invention provides a microfeature workpiece processing system that includes an enclosure, a gas supply, a vacuum, and a programmable controller. The enclosure is adapted to receive a plurality of microfeature workpieces for simultaneous treatment. The gas supply is adapted to selectively deliver a first gaseous precursor, a second gaseous precursor, and a purge gas to the enclosure. The programmable controller is operatively coupled to the gas supply and the vacuum, and the controller may be programmed to carry out one of the aforementioned methods or methods in accordance with other aspects of the invention.
For ease of understanding, the following discussion is subdivided into two areas of emphasis. The first section discusses microfeature workpiece processing systems in accordance with selected embodiments of the invention. The second section outlines methods in accordance with other aspects of the invention.
B. Microfeature Workpiece Processing Systems
One or more microfeature workpieces W, e.g., semiconductor wafers, may be positioned in the deposition chamber 25 for processing. In the illustrated embodiment, a plurality of microfeature workpieces W are held in the processing enclosure 20 in a workpiece holder 70. It should be understood that
The reactor 10 also includes at least one heat source to heat the workpieces W and maintain them at the desired temperature. The heat source in
Gas is introduced from the gas supply 30 to the deposition chamber 25 by a gas line 32 and an inlet 36. The inlet 36 directs a flow of gas into the main chamber 28 of the deposition chamber 25. Under influence of the vacuum 40, gas introduced via the gas inlet 36 will flow through the main chamber 28, outwardly into the annular exhaust 26, and out of the deposition chamber 25. A valve assembly 34 in the gas line 32 may be operated by a controller 90 to selectively deliver gases to the deposition chamber 25 during the deposition phase. In one embodiment, the controller 90 comprises a computer having a programmable processor programmed to control operation of the reactor 10 to deposit material on the workpieces W in accordance with one or more of the methods outlined below. The controller 90 may be coupled to the vacuum 40 to control its operation. The controller 90 may also be operatively connected to the heater 50, e.g., via the power supply 52, to control the temperature of the workpieces W.
Some aspects of the gas supply 30 will depend on the nature of the deposition process to be carried out in the reactor 10. In one embodiment, the reactor 10 is adapted to carry out an ALD process employing multiple precursors. The gas supply 30 in such embodiments can include a plurality of separate gas sources 31 a-c, and the valve assembly 34 may have a plurality of valves. For example, the gas supply 30 may include one or more gaseous precursors capable of reacting to deposit titanium nitride. In one such implementation, the first gas source 31 a is adapted to deliver TiCl4, the second gas source 31 b is adapted to deliver NH3, and the third gas source 31 c is adapted to deliver a flow of a purge gas, e.g., nitrogen.
C. Methods of Depositing Materials on Microfeature Workpieces
As noted above, other embodiments of the invention provide methods of processing microfeature workpieces. In the following discussion, reference is made to the particular microfeature workpiece processing system 10 shown in
With the majority of any deleterious gases removed from the deposition chamber 25, a flow of the first precursor gas may be initiated in process 115 and terminated in process 120. This will deliver a pulse of the first precursor gas into the deposition chamber 25, exposing a surface of each of the workpieces W in the deposition chamber 25 to the first precursor. The first precursor may be at least chemisorbed on the workpiece W. Theoretically, such chemisorption will form a monolayer that is uniformly one molecule thick on the entire surface of the workpiece W. Such a monolayer may be referred to as a saturated monolayer. As a practical matter, in some circumstances some minor portions of the workpiece surface may not chemisorb a molecule of the precursor. Nevertheless, such imperfect monolayers are still referred to herein as monolayers. In many applications, a substantially saturated monolayer may be suitable. A substantially saturated monolayer is a monolayer that will yield a deposited layer exhibiting the requisite quality and/or performance parameters.
As is known in the art, an excess of the first precursor gas is typically delivered to the processing enclosure 20. This excess first precursor gas is desirably removed from the vicinity of the workpiece surface prior to introduction of the second precursor gas. Inadequate removal of the first precursor gas prior to introduction of the second precursor gas may result in a gaseous phase reaction between the precursors that yields a material that is less conformal to the topography of the workpiece surface or otherwise adversely affects the quality of the deposited material. Consequently, in the manufacturing process 100 of
This series of first precursor-pump/purge-second precursor-pump/purge processes may be considered one ALD cycle adapted to deposit a single nanolayer of material. As noted above, the ALD process may need to be repeated a number of times to deposit a layer of material having an appropriate thickness. The manufacturing process 100 of
The first flow rate suitable in process 212 will depend in part on the design of the reactor 10, including its size and geometry, and the precursor being removed. In many commercial applications, though, a first flow rate of no greater than about 250 standard cubic centimeters per minute (sccm) will suffice. A flow rate of 0-250 sccm will be appropriate for most applications, but a flow rate of 50-250 sccm, e.g., 50-100 sccm, is preferred for select embodiments. The particular embodiment illustrated in
After the pump process 210, the pump/purge process 200 of
The timeline of
As noted above, the pump/purge process 200 includes a pump-down process 210 and a purge process 220. In the pump-down process 210, the flow of purge gas may be relatively low, e.g., 50-100 sccm. With the vacuum 40 activated, the pressure in the main chamber 28 of the enclosure will drop fairly rapidly, as suggested by curve X in the upper graph of
In the purge process 220, the flow rate of the purge gas is increased and the pressure within the main chamber 28 of the enclosure 20 is allowed to increase (curve Y). In one particular embodiment, the enclosure pressure at the end of the purge process 220 is similar to the process pressure P at which the workpieces W will be exposed to the second precursor gas. In one particular embodiment, a difference between the enclosure pressure at the end of the purge process 220 and the desired process pressure P at which the workpieces W will be exposed to the second precursor gas is about 0-10% of the process pressure P. In the particular scenario illustrated in the top graph of
One objective of the pump/purge process 200 is to reduce the concentration of any excess, nonadsorbed precursor gas in at least the main chamber 28 of the enclosure 20 to an acceptable level. The first precursor-pump/purge-second precursor-pump/purge cycle typically must be repeated numerous times to deposit a suitable thickness of material on the surfaces of the workpieces W. Reducing the time of the pump/purge process 200, therefore, can materially decrease the time needed to reach the suitable material thickness.
If the pump-down process 210 were omitted and the purge process 220 alone were relied on to reduce concentration of the precursor, one would expect to see the log of the partial pressure of the precursor decrease at a fairly constant rate over time. This is represented in
If the purge process 220 were omitted and the pump-down process alone were employed, one would expect to see a marked drop-off in the partial pressure of the precursor in a first phase 310, as illustrated in the solid curve of
The pump/purge process 200 illustrated in
In the particular embodiment shown in
The diffusion rate of any given gas will vary with pressure, with the diffusion rate increasing as pressure is reduced. Different gases diffuse at different rates, though. For example, the diffusion rate D for TiCl4 in nitrogen is expected to be on the order of 0.032 m2/s at an enclosure pressure of about 1 torr, but this diffusion rate will increase to about 0.80 m2/s at about 0.04 torr. In contrast, NH3, which may be used as a second precursor with TiCl4 to deposit TiN, has a diffusion rate D in nitrogen of about 0.088 m2/s at about 1 torr, which climbs to about 2.2 m2/s at about 0.04 torr. NH3, therefore, should diffuse out of the spaces between the workpieces W more readily than TiCl4.
The curves 310, 312, 320 a, and 320 b in
The above-detailed embodiments of the invention are not intended to be exhaustive or to limit the invention to the precise form disclosed above. Specific embodiments of, and examples for, the invention are described above for illustrative purposes, but those skilled in the relevant art will recognize that various equivalent modifications are possible within the scope of the invention. For example, whereas steps are presented in a given order, alternative embodiments may perform steps in a different order. The various embodiments described herein can be combined to provide further embodiments.
Unless the context clearly requires otherwise, throughout the description and the claims, the words “comprise,” “comprising,” and the like are to be construed in an inclusive sense as opposed to an exclusive or exhaustive sense, i.e., in a sense of “including, but not limited to.” Use of the word “or” in the claims in reference to a list of items is intended to cover a) any of the items in the list, b) all of the items in the list, and c) any combination of the items in the list.
In general, the terms used in the following claims should not be construed to limit the invention to the specific embodiments disclosed in the specification unless the above-detailed description explicitly defines such terms. While certain aspects of the invention are presented below in certain claim forms, the inventors contemplate various aspects of the invention in any number of claim forms. Accordingly, the inventors reserve the right to add additional claims after filing the application to pursue such additional claim forms for other aspects of the invention.