|Publication number||US20070084079 A1|
|Application number||US 11/639,460|
|Publication date||Apr 19, 2007|
|Filing date||Dec 14, 2006|
|Priority date||Jan 11, 2005|
|Also published as||US7228645, US20060150432, WO2006076088A2, WO2006076088A3|
|Publication number||11639460, 639460, US 2007/0084079 A1, US 2007/084079 A1, US 20070084079 A1, US 20070084079A1, US 2007084079 A1, US 2007084079A1, US-A1-20070084079, US-A1-2007084079, US2007/0084079A1, US2007/084079A1, US20070084079 A1, US20070084079A1, US2007084079 A1, US2007084079A1|
|Original Assignee||Xuyen Pham|
|Export Citation||BiBTeX, EndNote, RefMan|
|Referenced by (3), Classifications (8)|
|External Links: USPTO, USPTO Assignment, Espacenet|
This application is a continuation of U.S. Pat. application Ser. No. 11/032,852, filed Jan. 1, 2005, hereby incorporated by reference.
This invention relates to systems and methods for processing semiconductor wafers.
In semiconductor fabrication, various layers of insulating, conducting and semi-conducting materials are deposited to produce a multilayer semiconductor device. Using various fabrication techniques such as coating, oxidation, implantation, deposition, epitaxial growth of silicon, lithography, etching, and planarization, the layers are patterned to form elements such as transistors, capacitors, and resistors. These elements are then interconnected to achieve a desired electrical function in an integrated circuit (IC) device.
In many operations, residual unwanted materials such as post-etch/post-strip chemicals and slurry particles accumulate on the surface of a wafer. If left on the surface of the wafer for subsequent fabrication operations, these unwanted residual materials and particles may cause, among other things, defects such as scratches on the wafer surface and inappropriate interactions between metallization features. In some cases, such defects may cause devices on the wafer to become inoperable.
To illustrate, fabrication operations such as plasma etching, stripping and chemical mechanical polishing (CMP) may leave unwanted residuals on the surface of the wafer. These unwanted residuals may be removed using water washing, chemical washing, sonic washing (for example Megasonic and ultrasonic), and brush cleaning with deionized (DI or DIW) water, or a separate post-CMP cleaning. The post-CMP step is typically achieved by mechanical brush cleaning, using a polyvinyl alcohol (PVA) brush or sponge and DI water, or potassium or ammonium hydroxide as the cleaning agent. Other surface preparation processes can include chemical processes using various liquid chemicals.
After the cleaning operation, a rinse is applied with DI water and a drying process is performed. One of the substrate drying processes conventionally known in the art is a spin dry process for rotating a substrate at high speeds to spin off water from the surface of the substrate by centrifugal force in a single-wafer type substrate processing apparatus for processing substrates one by one.
One purpose of drying the substrates is to remove water on the substrates after cleaning. Currently several drying methods have been used in electronic component industry. The methods include a spin-rinse dry method, a hot water slow pull method, a Marangoni-type process, and an isopropyl alcohol (IPA) process.
The spin-rinse dryer uses centrifugal forces to remove water from substrate surfaces. However, spin-rinse dryer is known to have problems such as water spotting, static electric charge build-up, and stress-induced substrate damage due to high speed spinning about 2500 RPM. In the hot water slow pull method, the substrates are immersed in a hot water bath, which is heated to 80-90° C., and then slowly pulled from the bath. When a substrate is pulled from the bath, a thin water film is formed on the surface of the substrate. Then, the thermal energy stored in the substrate evaporates the thin water film. For successful evaporation, the rate at which the substrate is separated from the bath must be matched to the evaporation rate. The hot water process has several shortcomings. When the substrate has a non-homogeneous surface, partly hydrophobic and partly hydrophilic, the substrate is likely to have watermarks or stains thereon. Further, condensation of water vapor on the substrate after the substrate is pulled from the hot water may produce watermarks or stains on the substrate.
Since spin dryers or IPA vapor dryers cannot completely remove watermarks that occur on a wafer surface or between patterns, Marangoni dryers have been developed. The Marangoni dryer uses a difference between surface tenses of the IPA and water. The Marangoni-type process involves the introduction of a polar organic compound which dissolves in the liquid and thereby reduces the surface tension of the liquid. U.S. Pat. No. 6,027,574, entitled “METHOD OF DRYING A SUBSTRATE BY LOWERING A FLUID SURFACE LEVEL”, shows a Marangoni-type process. According to the Marangoni principle, fluid flows from low surface tension region to high surface tension region. In the Marangoni-type process, while the substrate is separated from the bath containing water that is at room temperature, the water is driven away from the substrate because of the Marangoni effect. To avoid condensation of water vapor on the surface of the substrate, the Marangoni-type process does not use hot water. After wafers are rinsed out by de-ionized water, the IPA vapor is fed to an upper interior space of a rinsing bath and the DI water is slowly withdrawn. Thus, the water is eliminated from a wafer surface. When the DI water is completely drained, the nitrogen of high temperature is fed into to evaporate the DI water remaining on the wafer surface. If the evaporated DI water and residues including particles are not fully issued out, they can cause the irregular liquid flow (turbulence) in the rinsing bath together with the nitrogen, so that the wafer surface is not uniformly dried and the water remains at a portion contacting with a wafer guide. In addition, since the Marangoni dryer cannot fundamentally prevent oxygen from reacting on the wafer, it cannot suppress formation of an oxide layer.
As noted in U.S. Pat. No. 6,625,901, several issues arise with conventional Marangoni-type process. First, the drying speed of the process is low, because the substrate is dried at room temperature, and the chamber is purged of the remaining IPA vapor for an extended period of time (3-5 minutes) after being removed from the water. Accordingly, drying cost is high. Second, although room temperature water is used, there is still a condensation problem during and after the separation of the substrate from the water. Water vapor condenses on the substrate and forms micro droplets that leave a residue behind, causing defects in subsequent manufacturing processes. Fourth, purging of IPA while the substrate is dried in the chamber may cause condensation of water vapor.
In one aspect, a multi-zone shower head includes a plate having zones of plurality nozzles positioned thereon, each of the nozzle zone assigned to one or more of a plurality of processing zones for the wafer; and a manifold assembly coupled to the pressure regulator or MFC to control one or more of the nozzle zones as a group in each processing zone.
Implementations of the above aspect may include one or more of the following. The multi-zone shower head plate assembly can include an upper plate having plurality of input cavity chambers for each subsequence nozzle zone of lower plate; and a lower plate having plurality of nozzle zones mating with each upper chamber. Each processing zone can provide an aqueous vapor flow, a gas, a gas mixture or a compressed liquid. A plurality of control device can be used with the manifolds to control volume, flow rate, and pressure of each processing zone. The processing zones can include a plurality of nitrogen and IPA vapor zones. The nozzles can be spaced apart from each other between approximately 0.06 inch and 0.25 inch (preferably 0.010 inch). Each nozzle can be angled outwardly from center of wafer approximately between 0 and 45 degrees (preferably 20 degrees) and can have a nozzle diameter approximately between 0.01 inch and 0.06 inch (preferably 0.015 inch). Each zone can be separated by a distance approximately between 0.5 inch and 2.00 inches (preferably 1 inch). The plate surface can be a flat surface, a concave surface or a convex surface. The processing zones can be shaped as concentric rings, rectangular rings, linear rings, or radial rings. Alternatively, the processing zones can be circular zones, square zones, triangular zones, rectangular zones or linear zones. An outer processing zone can be used to dry a wafer edge (with less than 20 nozzles in one embodiment). A rotating platform can be used to rotate the wafer. The platform can generate a centrifugal force during wafer spinning to urge an aqueous solution to move toward a wafer edge. The aqueous solution can be DIW and can be rinsed to remove any chemical residues on the wafer. The processing zones can flow N2/IPA mixture or heated nitrogen during wafer rotation to evaporate residual thin film on the wafer and to prevent water marks on the wafer. An actuator such as a motor or an air actuator can be used to move the shower head assembly plate up/down or rotate left/right or pivot up/down the plate (preferably the shower head assembly is moved vertically in an up/down manner). The shower head assembly plate can be concentric or non-concentric with the wafer or the assembly plate can be concentric or non-concentric with the platform to rotate the wafer. Additional nozzle head(s) can access second (back side) sides of the wafer for additional processing.
In another aspect, a system for fabricating a wafer having first and second sides includes a platform adapted to receive and rotate the wafer; a shower head positioned above the first side (front side), the shower head having plurality of nozzle zones positioned thereon to process the first side (front side); and second nozzle heads coupled to the platform to access the second side (back side) of the wafer.
Implementations of the above apparatus can include one or more of the following. A drive assembly can actuate the platform. A first bowl can collect material from the first head and a second bowl can collect material from the second head. A moveable shroud is used to load/unload the wafer and contain material from one or more of the heads. The nozzles can discharge air, gas, or a mixture thereof. The nozzles can also discharge a liquid material, a chemical material or a gaseous material. The wafer can be positioned offset from the shower head.
The shower head can be fabricated from a variety of material and surface finishing. The air nozzles can be spaced from 0.06+0.25″ (preferably 0.1″). The angle of nozzle is tilting from 0 to 45 degree (15 degree preferred). The nozzle size is from 0.01 to 0.06″ (preferably 0.015″). The spacing of each zone is from 0.5 to 2.0″ (preferably 0.9″). The surface of the shower head is not limited to a flat surface; it can be made as concave or convex surface. The shower head can arrange the nozzles in concentric rings, linear spacing radically or combined of both designs. The outer edge zone can be used to dry wafer edge.
In a system embodiment, the shower head is located at the top of the substrate spinning apparatus, and can move up/down at the appropriate position by air cylinder or motor. A 0.10 to 2 inch gap position between the shower head and the wafer for each required processing operation can be controlled by motor or air cylinder (preferably 0.25 inch). The shower head can move vertically above the wafer, and alternatively can be rotated and pivoted up and down, and can be rotated side way as well as moved up and down. The shower can be located concentric or not to the wafer spinning apparatus. Its also can located concentric to wafer spinning apparatus but still have the wafer offset from the spinning apparatus.
In another implementation where the processing zones are multi-air zones, the shower head with multi-air zones control an aqueous vapor flow, gases, gas mixture and wafer spinning apparatus to perform front wafer processes. Various combination of gas, gas mixture or liquid can be flowed through the shower head zones. The systems of manifold and control device enable a precise control of volume, flow rate, and pressure of each zone. The shower head with multi-air zones controlled nitrogen/IPA or an aqueous vapor flow and wafer rotation apparatuses to dry front wafer and rotation arm with attached air nozzle(s) to dry the backside of the wafer. Combining the force from each circular nitrogen/IPA vapor air zones and the centrifugal force of the spinning wafer urges DIW or other aqueous based to move toward the edge of wafer.
In an exemplary Shower Head Vapor Dry (SHVD) process, DIW is rinsed to remove any chemical residues on wafer from previous cleaning processes. As required for surface treatments, nitrogen/IPA or an aqueous vapor can be used to coat the surface of wafer as (heated) DIW or other aqueous-based solutions floods the wafer surface for wetting the wafer surface. A controlled wafer rotation is performed and the multi-zone shower head applies N2/IPA vapors, starting from a center processing zone and moving to outer zones. The N2/IPA assists in drying the wafer using the Marangoni effect. The resulting surface tension gradient pushes water away from wafer center as it is rotated. Each circular air zone in shower head can continue to flow N2/IPA mixture or heated nitrogen at one or more wafer rotation speed(s) to evaporate residual thin films of liquid solutions on the wafer to prevent the formation of water marks on the wafer. This process save time, lower the cost for each wafer by eliminating the need for post-clean and batch IPA dry on porous and hydrophobic film of copper/low-k interconnects wafer without leaving water marks.
The foregoing methods and apparatuses for processing semiconductor wafers can be used in conjunction with other semiconductor processes as post-CMP clean/dry, Dry/wet Post-Etch Residue cleans (Polymer Removal), Photoresist Removal and surface preparation (FEOL & BEOL), PrePhoto Lithography, Pre-Deposition clean and dry, Back Side Metals Clean, Back Side Films Etch (Front side and/or backside), Pre-Epi Clean, among others. Such a Shower Head Vapor Dryer can be used with an integrated chamber and the system does not required transferring wafer from clean module to dry module, improving throughput and reduce wafer stress, wafer contamination and defectives.
One or more of the following advantages may be achieved. Water marks and wafer stress on the wafer are virtually eliminated using the multi-zone shower head and using centrifugal forces exerting during the slow spinning to dry wafer (5 to 600 RPM). The system efficiently dries the wafer after fabrication operations that leave unwanted residue on one or both surfaces of the wafer. The improved wafer cleaning/drying minimizes the undue costs of discarding wafers having inoperable devices.
Other aspects and advantages of the present invention will become apparent from the following detailed description, taken in conjunction with the accompanying drawings, illustrating by way of example the principles of the present invention.
The present invention will be readily understood by the following detailed description in conjunction with the accompanying drawings. To facilitate this description, like reference numerals designate like structural elements.
Referring now to
Turning now to
The wafer 100 has first and second sides 101 and 102 (in this case the front and back wafer sides) and is mounted on a platform 104 adapted to securely receive and rotate the wafer.
In the embodiment of
In the plate 201, one or more liquid inlet tube feed through 220A. In one embodiment, the inlet tube feed through 220A is a cylinder that goes through both plates 201 and 203. Also positioned on the plate 201 is a plurality of gaseous fluid inlet fittings 230A that define a plurality of air chambers. In one embodiment, each inlet fitting 230A has a separate chamber 216 guide the gaseous fluid through narrow gap 230C from 0.005 to 0.040 inch (preferably about 0.015 inch) of the showerhead 200, this narrow gap has radial blocked segment to allow better flow distribution to the below chamber 230B of bottom plate 203. Additionally, multi-zone shower head assembly has a plurality of O-ring receptacles 234 between top plate 201 and 203. The O-ring receptacles 234 are adapted to receive O-rings 236 to isolate each zone from its neighbors.
The bottom plate 203 has a corresponding liquid inlet tube feed through 220B that cooperates with the inlet tube 220A. The inlet tube feed through 220B terminates in an angle cut 221 about 30 degree and can be used to feed liquid lines for flooding wafer during wafer drying.
In combination, plates 201 and 203 form a multi-zone shower head assembly 200 having a plurality of hole or nozzle zones 218 passing through the showerhead 200. Generally, the holes are disposed in a polar array as shown in
In one embodiment shown in
Turning now to
In drying a substrate, the drying apparatus increases the wet ability of the substrates or wafers and promotes the separation of water or fluid from the substrate and dries the substrate by transferring of thermal energy to the substrate. Since the N2/IPA vapor supplied to the interface between the substrate and the fluid has lower surface tension than the fluid does, the N2/IPA vapor dissolved on the top surface of the fluid in the bath promotes the removal of the fluid from the substrate while the substrate is pulled from the fluid in the bath. That is, the surface tension difference between the bulk fluid and the N2/IPA/fluid mixture promotes the separation of the fluid from the substrate. Further, the N2/IPA vapor increases the wet ability of the substrates.
As detailed in
Next, pressure regulator or MFC 311 of zone 2 of the manifold 320 is actuated to turn the nozzle corresponding to N2/IPA zone 2 (373). The pressure regulator or MFC 311 of zone 3 of manifold 320 is then actuated to turn the nozzle corresponding to N2/IPA zone 3 (374). Next, the pressure regulator or MFC 311 of zone 4 of manifold 320 is actuated to turn the nozzle corresponding to N2/IPA zone 4 (375). Finally, the pressure regulator or MFC 311 of zone 5 of manifold 320 is actuated to turn the nozzle corresponding to N2/IPA zone 5 (376). Thus, the spinning of the wafer combined with selective activation of nozzles enable the DIW to be removed without staining the wafer with watermark, among others. The inner zone(s) can continuously flow the N2/IPA mixture or heated N2 while the outer zone(s) can perform dry processing.
The systems for drying of semiconductor wafers can be used in conjunction with processes such as post-CMP clean, Dry/wet Post-Etch Residue cleans (Polymer Removal), Photoresist Removal and surface preparation (FEOL & BEOL), Pre-Photo Lithography, Pre-Deposition clean and dry, Back Side Metals Clean, Back Side Films Etch (Front side and/or backside), Pre-Epi Clean, among others.
The spinning apparatus of
In this embodiment, a processing module 400 such as the cleaner/dryer of
Although the invention has been described with reference to particular embodiments, the description is only an example of the inventor's application and should not be taken as limiting. Various adaptations and combinations of features of the embodiments disclosed are within the scope of the invention as defined by the following claims.
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US7644512 *||Jan 18, 2007||Jan 12, 2010||Akrion, Inc.||Systems and methods for drying a rotating substrate|
|US20090061646 *||Sep 5, 2008||Mar 5, 2009||Chiang Tony P||Vapor based combinatorial processing|
|US20130074358 *||Sep 24, 2012||Mar 28, 2013||Quantum Technology Holdings Limited||Heated body with high heat transfer rate material and its use|
|U.S. Classification||34/351, 118/715|
|International Classification||C23C16/00, F26B3/00|
|Cooperative Classification||H01L21/67051, H01L21/67034|
|European Classification||H01L21/67S2D4D, H01L21/67S2D4W4|