|Publication number||US20070177247 A1|
|Application number||US 11/698,721|
|Publication date||Aug 2, 2007|
|Filing date||Jan 26, 2007|
|Priority date||Apr 8, 1998|
|Also published as||US7301704, US7511875, US7554711, US7791787, US7872792, US9110289, US20060262380, US20070008607, US20070139758, US20090135463, US20110170166, US20110170167, US20120085731, US20120099174, WO1999052006A2, WO1999052006A3|
|Publication number||11698721, 698721, US 2007/0177247 A1, US 2007/177247 A1, US 20070177247 A1, US 20070177247A1, US 2007177247 A1, US 2007177247A1, US-A1-20070177247, US-A1-2007177247, US2007/0177247A1, US2007/177247A1, US20070177247 A1, US20070177247A1, US2007177247 A1, US2007177247A1|
|Original Assignee||Miles Mark W|
|Export Citation||BiBTeX, EndNote, RefMan|
|Referenced by (71), Classifications (36), Legal Events (4)|
|External Links: USPTO, USPTO Assignment, Espacenet|
This is a continuation in part of U.S. patent applications Ser. No. 08/238,750now U.S. Pat. No. 5,835,255, Ser. No. 08/554,630, now abandoned and Ser. No. 08/769,947 now abandoned, filed May 5, 1994, Nov. 6, 1995, and Dec. 19, 1996 respectively, and incorporated by reference.
This invention relates to interferometric modulation.
Interference modulators (IMods) are a broad class of devices that modulate incident light by the manipulation of admittance via the modification of the device's interferometric characteristics. Applications for such devices include displays, optical processing, and optical information storage.
The parent application describes two kinds of structures whose impedance, the reciprocal of admittance, can be actively modified so that they can modulate light. One scheme is a deformable cavity whose optical properties can be altered by electrostatic deformation of one of the cavity walls. The composition and thickness of these walls, which consist of layers of dielectric, semiconductor, or metallic films, allows for a variety of modulator designs exhibiting different optical responses to applied voltages.
One such design includes a filter described as a hybrid filter which has a narrow bandpass filter and an induced absorber. When the wall associated with the hybrid filter is brought into contact with a reflector, incident light of a certain range is absorbed. This occurs because the induced absorber matches the impedance of the reflector to that of the incident medium for the range of frequencies passed by the narrow-band filter.
In general, in one aspect, the invention features an interferometric modulator comprising a cavity defined by two walls. At least two arms connect the two walls to permit motion of the walls relative to each other. The two arms are configured and attached to a first one of the walls in a manner that enables mechanical stress in the first wall to be relieved by motion of the first wall essentially within the plane of the first wall.
Implementations of the invention may include one or more of the following features. The motion of the first wall may be rotational. Each of the arms has two ends, one of the ends attached to the first wall and a second end that is attached at a point that is fixed relative to a second one of the walls. The point of attachment of the second end is offset, with reference to an axis that is perpendicular to the first wall, from the end that is attached to the second wall. The first wall has two essentially straight edges and one end of each of the arms is attached at the middle of one of the edges or at the end of one of the edges. A third arm and a fourth arm also each connects the two walls. The arms define a pinwheel configuration. The lengths, thicknesses and positions of connection to the first wall of the arms may be configured to achieve a desired spring constant.
In general, in another aspect, the invention features an array of interferometric modulators. Each of the interferometric modulators has a cavity defined by two walls and at least two arms connecting the two walls to permit motion of the walls relative to each other. The walls and arms of different ones of the modulators are configured to achieve different spring constants associated with motion of the walls relative to each other.
In general, in another aspect, the invention features a method of fabricating an interferometric modulator, in which two walls of a cavity are formed, connected by at least two arms. After the forming, a first one of the walls is permitted to move in the plane of the first wall relative to the arms to relieve mechanical stress in the first wall.
In general, in another aspect, the invention features an interferometric modulator comprising three walls that are generally parallel to one another. The walls are supported for movement of at least one of the walls relative to the other two. Control circuitry drives at least one of the walls to discrete positions representing three discrete states of operation of the modulator.
Implementations of the invention may include one or more of the following features. In one of the three discrete states, there is a gap between the first and a second of the two walls and a gap between the second and a third of the two walls. In a second of the three discrete states, there is a gap between the first and the second of the two walls and no gap between the second and the third of the two walls. In the third of the three discrete states, there is no gap between the first and the second of the two walls and no gap between the second and the third of the two walls. Each membrane includes a combination of dielectric, metallic, or semiconducting films.
In general, in another aspect, an interference modulator includes a cavity defined by two walls that are movable relative to one another to and from a contact position in which the two walls are essentially adjacent to one another. Spacers are mounted to form part of one of the walls to reduce the surface area over which the two walls touch in the contact position.
Implementations of the invention may include one or more of the following features. The spacers comprise electrodes and conductors feed current to the electrodes.
In general, in another aspect, the invention features an interference modulator comprising a cavity defined by two walls that are separated by a fluid-filled gap. The walls are movable relative to each other to change the volume of the gap. An aperture (e.g., a round hole in the center) in one of the walls is configured to control the damping effect of fluid moving into or out of the gap as the volume of the gap changes. In implementations of the invention, the aperture comprises a round hole in the center of the wall.
In general, in another aspect, the invention features an interference modulator comprising at least two walls that are movable relative to each other to define a cavity between them. The relative positions of the walls define two modes, one in which the modulator reflects incident light and appears white and another in which the modulator absorbs incident light and appears black. In implementations, one of the walls may include a sandwich of a dielectric between metals, and the other of the walls may comprise a dielectric.
In general, in another aspect, the invention features an interferometric modulator comprising a cavity defined by two walls with at least two arms connecting the two walls to permit motion of the walls relative to each other. The response time of the modulator is controlled to a predetermined value by a combination of at least two of: the lengths of the arms, the thickness of one of the walls, the thickness of the arms, the presence and dimensions of damping holes, and the ambient gas pressure in the vicinity of the modulator.
In general, in another aspect, the invention features an interferometric modulator comprising a cavity defined by two walls, at least two arms connecting the two walls to permit motion of the walls relative to each. The modulator includes a charge deposition mitigating device includes at least one of actuation rails or the application of alternating polarity drive voltages.
In general, in another aspect, the invention features an interferometric modulator comprising a cavity defined by two walls held by a support comprising two materials such that the electrical or mechanical properties of the mechanical support differ at different locations in a cross-section of the mechanical support.
Implementations of the invention may include one or more of the following features. The support may include a laminate of two or more discrete materials or a gradient of two or more materials. The two materials exhibit respectively different and complementary electrical, mechanical, or optical properties.
In general, in another aspect, the invention features, a method for use in fabricating a microelectromechanical structure, comprising using a gas phase etchant to remove a deposited sacrificial layer. In implementations of the invention, the MEMS may include an interference modulator in which a wall of the modulator is formed on the substrate and the gas phase etchant may remove the sacrificial layer from between the wall and the substrate. The gas phase etchant may include one of the following: XeF2, BrF3, CIF3, BrF5, or IF5.
In general, in another aspect, the invention features a method of making arrays of MEMS (e.g., interference modulators) on a production line. Electronic features are formed on a surface of a glass or plastic substrate that is at least as large as 14″.times.16″, and electromechanical structures are micromachined on the substrate. In implementations of the invention, the steps of forming the electronic features overlap (or do not overlap) with steps of micromachining the structures.
Other advantages and features will become apparent from the following description and from the claims.
The optical impedance, the reciprocal of admittance, of an IMod can be actively modified so that it can modulate light.
One way of doing this (some aspects of which are described in U.S. patent applications Ser. No. 08/238,750 filed May 5, 1994, and incorporated by reference) is by a deformable cavity whose optical properties can be altered by deformation, electrostatically or otherwise, of one or both of the cavity walls. The composition and thickness of these walls, which comprise layers of dielectric, semiconductor, or metallic films, allow for a variety of modulator designs exhibiting different optical responses to applied voltages. This scheme can be considered a form of microelectromechanical structure/system (MEMS).
Another way of actively modifying the impedance of an IMod (some aspects of which are described in U.S. patent application Ser. No. 08/554,630, filed Nov. 6, 1995, and incorporated by reference) relies on an induced absorber to regulate the optical response. Such an IMod may operate in reflective mode and can be fabricated simply and on a variety of substrates.
Both the deformable and induced absorber schemes typically work in a binary mode, residing in one of two states, or an analog or tunable mode, residing in one of a continuous range of states. The difference between these two modes is based primarily on the mechanical design of the IMod structure.
Some applications could use a multi-state IMod that can reside in more than two states based on its mechanics and structure. A multi-state IMod can offer several advantages from both an optical performance and digital driving perspective.
Structural components in MEMS may exhibit residual film stress, the tendency of a deposited film, say of aluminum, to either shrink and crack (tensile stress) or push outward and buckle (compressive stress). A variety of factors contribute to the nature and magnitude of this stress. They include parameters of the deposition process as well as the temperature of the substrate during the deposition.
Control of this stress determines, in part, the forces required to actuate the structures as well as the final shapes of the structures. For example, a self-supporting membrane with very high residual stress may require prohibitively high driving voltages to actuate. The same membrane also may twist or warp due to these forces.
Actuation voltage, electromechanical behavior, and final shape are important characteristics of IMods. Some device applications exploit the electromechanical properties. Large area displays, for example, can take advantage of the inherent hysteresis of these structures in order to provide “memory” at the pixel location. However this requires that the IMods in a given array behave in a nearly identical fashion. Since their behavior is determined by the mechanical properties of the materials, among them residual stress, the films must be deposited with great consistency over the area of the display. This is not always readily attainable.
This twist is illustrated for a tensile case in
The other consequence of this relief is that stress no longer contributes, or contributes much less, to the electromechanical behavior of the device. Device characteristics such as voltage and resonant frequency are thus determined primarily by factors such as modulus of elasticity and film thickness. Both of these characteristics are more easily controlled during deposition.
Referring again to
One method of optimizing damping is to provide a damping hole through the body of the membrane. The hole serves to provide a supplementary path for the air during the motion of the membrane. The force required to displace and replace the air is thus lessened, and the effect of damping reduced. Thus choosing the size of the hole during manufacture provides a mechanism for manipulating the amount of damping the IMod experiences, and therefore its response time. Stiction bumps, 108, can also assist in minimizing damping. They do so by maintaining a finite distance between the membrane and substrate so that there is a path for airflow, between the membrane and the substrate, when the membrane is fully actuated.
Another method for optimizing damping relies on control of the ambient gas pressure. Any IMod device, as described in previous patent applications, will be packaged in a container that provides a hermetic seal, using an inert gas. This prevents the introduction of both particulate contaminants as well as water vapor, both of which can degrade the performance of the IMod over time. The pressure of this gas has a direct bearing on the amount of damping that the packaged devices will experience. Thus, the damping, and response time, may also be optimized by determining the ambient gas pressure within the packaging during manufacture.
A key metric of performance in a reflective flat panel display is its brightness. Most of these displays achieve color spatially, that is each pixel is divided into three sub-pixels corresponding to the colors red, blue, and green. White is achieved by maximizing the brightness of all three sub-pixels. Unfortunately, since each sub-pixel utilizes only about ⅓ of the light incident upon it, the overall brightness of the white state can be low.
This can be resolved by utilizing a sub-pixel structure that is capable of directly achieving a white state, in addition to a particular color. In this fashion, the overall brightness of the display can be increased because a sub-pixel in a white state utilizes a significantly higher fraction of the light incident upon it. The IMod design described in patent application Ser. No. 08/554,630 is capable of reflecting either a particular color or exhibiting a “black” or absorbing state. This design can be modified to include alternative states.
The three possible mechanical states, and associated dimensions, are illustrated in
Like all IMods, this design exhibits electromechanical hysteresis, though it is more complicated than an IMod with only two states. There is a minimum voltage which, when applied, is sufficient to keep one or both membranes in a driven or actuated state despite the mechanical forces which seek to return them to their relaxed positions.
Another issue that can be encountered in movable membrane structures is that of charge deposition, a phenomenon illustrated in
This condition can be resolved by applying alternating voltages to the structure. That is, for every intended actuation, change the polarity of the voltage that is applied such that the deposited charge is canceled out or actually exploited.
Electrical shorts are another concern for these devices. Referring again to
Another issue that complicates the fabrication of a display based on IMods is the manufacturing of a full-color display. Since different colors in an IMod are achieved by the undriven spacing of the IMod, an array with three different colors will have subarrays of IMods with three different gap sizes. Consequently, there will be three different electromechanical responses for the driving electronics to contend with. The damping holes are one technique for compensating for the variation in electromechanical response from color to color.
Another technique is to vary the thickness of either the membrane, in the double clamped IMod, or the tether thickness in the tether supported IMod. The latter technique is illustrated in
In the tether supported IMod, the spring constant could be determined by lengths of the tether arms. A longer tether results in a lower spring constant and a shorter tether produces a higher constant. This could be accomplished, in the same amount of total device space, by varying the position along the edge of the movable membrane to which the tether is attached. Thus, a tether connected to the center of the membrane edge would have a lower (a higher) than one connected to the nearer (the farther) end, respectively.
The concept of decoupling the optical properties of the movable membrane from the structural properties was discussed in the previous patent application. The fundamental idea is to fabricate a structure with separate elements designed and optimized to provide the required mechanical and structural characteristics and, independently, the required optical properties.
The general fabrication process described in the previous patent applications relies on the concept of surface micromachining, where a sacrificial layer is deposited, a structure is formed on top of it, and the sacrificial layer is etched away. One etch chemistry of particular interest utilizes a gas-phase etchant to remove the sacrificial layer. Candidates include gases known as XeF2, BrF3, ClF3, BrF5, and IF5. These gases have the advantageous property of etching materials such as silicon and tungsten spontaneously, and without the need for a plasma to activate the etch process. Because it is a gas phase etch, as opposed to a wet etch, the sacrificial etch step is much less complicated and provides additional flexibility in the kinds of structural materials which may be used. Furthermore it facilitates the fabrication of more elaborate devices with complex internal structures.
Display applications, in general, require the ability to fabricate on relatively large substrates. While many finished display devices can be smaller than 1 square inch, most direct view displays start at several square inches and can be as large as several hundred square inches or larger. Additionally, these displays utilize glass or plastic substrates that are not found in traditional semiconductor manufacturing plants. MEMS, which are primarily both silicon based and fabricated on silicon substrates, have been historically fabricated in semiconductor type facilities. However the need to fabricate large arrays of MEM devices on large substrates, a need which is exemplified by an IMod based display, cannot be served using traditional semiconductor manufacturing practices or facilities.
Alternatively, there exists a large and growing base of facilities that could also be applied to the manufacture of large arrays of IMods and other MEMS. This manufacturing base comprises facilities and factories that are currently used to manufacture Active Matrix LCDs. The book “Liquid Crystal Flat Panel Displays”, by William C. O'Mara, is incorporated herein by reference. These facilities are appropriate because the bulk of the fabrication process is related to the active matrix component, i.e. the thin film transistor (TFT) array that drives the LCD.
While there exist a variety of TFT fabrication processes, they all share several components which make them amenable to the fabrication of large area surface micromachined MEMS. First, the substrate of choice is glass or plastic, which is readily available in large sized formats. In addition, key materials deposited include silicon, tungsten, molybdenum, and tantalum, all of which are suitable sacrificial materials for gas phase etchants, as well as tantalum pentoxide, silicon dioxide, silicon nitride, and aluminum, which are suitable optical, insulating, structural, optical, and conducting materials. In general, all photolithography, process tooling, and testing are oriented towards large arrays and large area devices. Finally, the process for fabricating the TFTs can be utilized to fabricate electronics in conjunction with the MEM devices in order to provide driver circuitry and intelligent logic functions. Thus in conjunction with the gas phase etch, Active Matrix LCD fabs and their associated processes provide a readily usable manufacturing vehicle for IMod based displays in particular, and large area (at least as large of 14″×16″) MEM devices in general.
Two general approaches for fabricating TFTs and IMods or other MEM devices can be described as decoupled and overlapping. In the former the requisite TFT based circuitry is fabricated first, and then the IMods are fabricated subsequently. A more efficient approach is to fabricate the TFT array and the IMod array in a way that allows the sharing or overlapping of steps in each process. A representative TFT process sequence is shown in the following:
1. Deposit gate metal (molybdenum or tantalum for example).
2. Pattern gate metal.
3. Deposit insulator and amorphous silicon.
4. Pattern insulator and silicon.
5. Deposit display electrode (aluminum for example).
6. Pattern display electrode.
7. Deposit source/drain/signal line metal (aluminum).
8. Pattern source/drain/signal line.
9. Pattern silicon.
10. Deposit passivation film.
A representative IMod process sequence is shown in the following:
1. Deposit dielectricprimary mirror (molybdenum or tantalum for primary mirror).
2. Pattern primary mirror.
3. Deposit insulator and amorphous silicon.
4. Pattern insulator and silicon.
5. Deposit secondary mirror (aluminum)
6. Pattern secondary mirror.
7. Etch sacrificial material (silicon).
Comparison of these two process sequences reveals that steps 1-6 are functional equivalents on a fundamental level and, obviously, located at the same place in their respective sequences. This similarity benefits both the decoupled and overlapping processes in several ways. First, similarity in materials minimizes the total number of dedicated deposition tools required, as well as the number of etchant chemistries. Second, identical location of equivalent steps streamlines the overall process flow. Finally, for an overlapping process, some of the steps can be shared. The consequence of this is an overall reduction in the total number of process steps required to fabricate both the IMod array and the TFT circuitry, reducing both complexity and cost. In general the process and facilities for manufacturing the active matrix component of the AMLCD would appear to be ideally suited for IMod fabrication.
Any thin film, medium, or substrate (which can be considered a thick film) can be defined in terms of a characteristic optical admittance. By considering only the reflectance, the operation of a thin film can be studied by treating it as an admittance transformer. That is, a think film or combination of thin films (the transformer) can alter the characteristic admittance of another thin film or substrate (the transformed film) upon which it is deposited. In this fashion a normally reflective film or substrate may have it's characteristic admittance altered (i.e., transformed) in such a way that its reflectivity is enhanced and/or degraded by the deposition of, or contact with, a transformer. In general there is always reflection at the interface between any combination of films, mediums, or substrates. The closer the admittance of the two, the lower the reflectance at the interface, to the point where the reflectance is zero when the admittances are matched.
The ability to alter the thickness T of spacer 802 allows the optical characteristics of the entire structure to be modified. Referring to
Proper selection of materials thus allows for the fabrication of pixels which can switch from reflecting any color (or combination of colors) to absorbing (e.g., blue to black), or from reflecting any color combination to any other color (e.g., white to red). Referring to
Optical compensation mechanism 1608 serves two functions in this display. The first is that of mitigating or eliminating the shift in reflected color with respect to the angle of incidence. This is a characteristic of all interference films and can be compensated for by using films with specifically tailored refractive indices or holographic properties, as well as films containing micro-optics; other ways may also be possible. The second function is to supply a supplemental frontlighting source. In this way, additional light can be added to the front of the display when ambient lighting conditions have significantly diminished thus allowing the display to perform in conditions ranging from intense brightness to total darkness. Such a frontlight could be fabricated using patterned organic emitters or edge lighting source coupled to a micro-optic array within the optical compensation film; other ways may also be possible.
The general process for fabrication of the devices is set forth in the parent patent application. Additional details of two alternative ways to fabricate spacers with different sizes are as follows; other ways may also be possible.
Both alternative processes involve the iterative deposition and patterning of a sacrificial spacer material which, in the final step of the larger process is, etched away to form an air-gap.
Other embodiments are within the scope of the following claims.
For example, the spacer material need not ultimately be etched away but may remain instead a part of the finished device. In this fashion, and using the previously described patterning techniques, arbitrary patterns may be fabricated instead of arrays of simple pixels. Full color static graphical images may thus be rendered in a method which is analogous to a conventional printing process. In conventional printing, an image is broken up into color separations which are basically monochrome graphical subsets of the image, which correspond to the different colors represented, i.e., a red separation, a blue separation, a green separation, and a black separation. The full-color image is produced by printing each separation using a different colored ink on the same area.
Alternatively, in a process which we will call “Iridescent Printing”, the different separations are composed of layers of thin films which correspond to the IMod design described here and those in the referenced patent. Patterning or printing a combination of colors or separations on the same area, allows for brilliant full-color images to be produced.
Alternatively, a simpler process can be obtained if only the induced absorber design is used. In this process, the entire substrate is first coated with the induced absorber stack. Subsequent steps are then used to pattern the spacer material only, using the aforementioned techniques. After the desired spacers, i.e., colors are defined, a final deposition of a reflector is performed.
The brightness of different colors can be altered by varying the amount of black interspersed with the particular color, i.e., spatial dithering. The images also exhibit the pleasing shift of color with respect to viewing angle known as iridescence.
In another example, a reflective flat panel display may also be fabricated using a single kind of pixel instead of three. Multiple colors, in this case, are obtained through fabricating the pixels in the form of continuously tunable or analog interferometric modulators as described in the parent patent application. In this fashion, any individual pixel may, by the application of the appropriate voltage, be tuned to reflect any specific color. This would require that the array be fabricated on a substrate along with electronic circuitry, or directly on the surface of an integrated circuit, in order to provide a charge storage mechanism. This approach, though it requires a more complicated driving scheme relying on analog voltages, provides superior resolution. It would also find application in a projection system.
Other embodiments are within the scope of the following claims.
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US7499208 *||Jul 15, 2005||Mar 3, 2009||Udc, Llc||Current mode display driver circuit realization feature|
|US7649671||Jun 1, 2006||Jan 19, 2010||Qualcomm Mems Technologies, Inc.||Analog interferometric modulator device with electrostatic actuation and release|
|US7663794||Jan 15, 2008||Feb 16, 2010||Qualcomm Mems Technologies, Inc.||Methods and devices for inhibiting tilting of a movable element in a MEMS device|
|US7704772||Nov 14, 2008||Apr 27, 2010||Qualcomm Mems Technologies, Inc.||Method of manufacture for microelectromechanical devices|
|US7715079||Dec 7, 2007||May 11, 2010||Qualcomm Mems Technologies, Inc.||MEMS devices requiring no mechanical support|
|US7715085||May 9, 2007||May 11, 2010||Qualcomm Mems Technologies, Inc.||Electromechanical system having a dielectric movable membrane and a mirror|
|US7742220||Mar 28, 2007||Jun 22, 2010||Qualcomm Mems Technologies, Inc.||Microelectromechanical device and method utilizing conducting layers separated by stops|
|US7746539||Jun 25, 2008||Jun 29, 2010||Qualcomm Mems Technologies, Inc.||Method for packing a display device and the device obtained thereof|
|US7768690||Jun 25, 2008||Aug 3, 2010||Qualcomm Mems Technologies, Inc.||Backlight displays|
|US7773286||Dec 3, 2007||Aug 10, 2010||Qualcomm Mems Technologies, Inc.||Periodic dimple array|
|US7782517||Jun 21, 2007||Aug 24, 2010||Qualcomm Mems Technologies, Inc.||Infrared and dual mode displays|
|US7787173||Dec 23, 2008||Aug 31, 2010||Qualcomm Mems Technologies, Inc.||System and method for multi-level brightness in interferometric modulation|
|US7830586||Jul 24, 2006||Nov 9, 2010||Qualcomm Mems Technologies, Inc.||Transparent thin films|
|US7835061||Jun 28, 2006||Nov 16, 2010||Qualcomm Mems Technologies, Inc.||Support structures for free-standing electromechanical devices|
|US7839557||May 6, 2008||Nov 23, 2010||Qualcomm Mems Technologies, Inc.||Method and device for multistate interferometric light modulation|
|US7847999||Jan 9, 2008||Dec 7, 2010||Qualcomm Mems Technologies, Inc.||Interferometric modulator display devices|
|US7848001||May 11, 2006||Dec 7, 2010||Qualcomm Mems Technologies, Inc.||Method and system for interferometric modulation in projection or peripheral devices|
|US7852542||Mar 2, 2009||Dec 14, 2010||Qualcomm Mems Technologies, Inc.||Current mode display driver circuit realization feature|
|US7855826||Aug 12, 2008||Dec 21, 2010||Qualcomm Mems Technologies, Inc.||Method and apparatus to reduce or eliminate stiction and image retention in interferometric modulator devices|
|US7859740||Nov 21, 2008||Dec 28, 2010||Qualcomm Mems Technologies, Inc.||Stiction mitigation with integrated mech micro-cantilevers through vertical stress gradient control|
|US7884989||Jan 25, 2007||Feb 8, 2011||Qualcomm Mems Technologies, Inc.||White interferometric modulators and methods for forming the same|
|US7889415||Feb 15, 2011||Qualcomm Mems Technologies, Inc.||Device having a conductive light absorbing mask and method for fabricating same|
|US7889417||Jul 6, 2009||Feb 15, 2011||Qualcomm Mems Technologies, Inc.||Electromechanical system having a dielectric movable membrane|
|US7898723||Apr 2, 2008||Mar 1, 2011||Qualcomm Mems Technologies, Inc.||Microelectromechanical systems display element with photovoltaic structure|
|US7920319||Dec 3, 2009||Apr 5, 2011||Qualcomm Mems Technologies, Inc.||Electromechanical device with optical function separated from mechanical and electrical function|
|US7924494||Dec 4, 2009||Apr 12, 2011||Qualcomm Mems Technologies, Inc.||Apparatus and method for reducing slippage between structures in an interferometric modulator|
|US7936497||Jul 28, 2005||May 3, 2011||Qualcomm Mems Technologies, Inc.||MEMS device having deformable membrane characterized by mechanical persistence|
|US7944599||Jul 2, 2007||May 17, 2011||Qualcomm Mems Technologies, Inc.||Electromechanical device with optical function separated from mechanical and electrical function|
|US7944604||Feb 10, 2009||May 17, 2011||Qualcomm Mems Technologies, Inc.||Interferometric modulator in transmission mode|
|US7948671||Dec 4, 2009||May 24, 2011||Qualcomm Mems Technologies, Inc.||Apparatus and method for reducing slippage between structures in an interferometric modulator|
|US7952787||May 5, 2009||May 31, 2011||Qualcomm Mems Technologies, Inc.||Method of manufacturing MEMS devices providing air gap control|
|US7969638||Apr 10, 2008||Jun 28, 2011||Qualcomm Mems Technologies, Inc.||Device having thin black mask and method of fabricating the same|
|US7982700||Jul 19, 2011||Qualcomm Mems Technologies, Inc.||Conductive bus structure for interferometric modulator array|
|US7999993||Nov 8, 2007||Aug 16, 2011||Qualcomm Mems Technologies, Inc.||Reflective display device having viewable display on both sides|
|US8008736||Jun 3, 2005||Aug 30, 2011||Qualcomm Mems Technologies, Inc.||Analog interferometric modulator device|
|US8023167||Jun 25, 2008||Sep 20, 2011||Qualcomm Mems Technologies, Inc.||Backlight displays|
|US8035883||Oct 11, 2011||Qualcomm Mems Technologies, Inc.||Device having a conductive light absorbing mask and method for fabricating same|
|US8054527||Oct 21, 2008||Nov 8, 2011||Qualcomm Mems Technologies, Inc.||Adjustably transmissive MEMS-based devices|
|US8058549||Dec 28, 2007||Nov 15, 2011||Qualcomm Mems Technologies, Inc.||Photovoltaic devices with integrated color interferometric film stacks|
|US8068269||Sep 24, 2009||Nov 29, 2011||Qualcomm Mems Technologies, Inc.||Microelectromechanical device with spacing layer|
|US8072402||Aug 29, 2007||Dec 6, 2011||Qualcomm Mems Technologies, Inc.||Interferometric optical modulator with broadband reflection characteristics|
|US8081370||May 5, 2009||Dec 20, 2011||Qualcomm Mems Technologies, Inc.||Support structures for electromechanical systems and methods of fabricating the same|
|US8081373||Oct 12, 2010||Dec 20, 2011||Qualcomm Mems Technologies, Inc.||Devices and methods for enhancing color shift of interferometric modulators|
|US8098416||Jan 14, 2010||Jan 17, 2012||Qualcomm Mems Technologies, Inc.||Analog interferometric modulator device with electrostatic actuation and release|
|US8102590||May 5, 2009||Jan 24, 2012||Qualcomm Mems Technologies, Inc.||Method of manufacturing MEMS devices providing air gap control|
|US8115987||Jul 11, 2007||Feb 14, 2012||Qualcomm Mems Technologies, Inc.||Modulating the intensity of light from an interferometric reflector|
|US8164821||Feb 22, 2008||Apr 24, 2012||Qualcomm Mems Technologies, Inc.||Microelectromechanical device with thermal expansion balancing layer or stiffening layer|
|US8174752||Apr 14, 2011||May 8, 2012||Qualcomm Mems Technologies, Inc.||Interferometric modulator in transmission mode|
|US8213075||Nov 5, 2010||Jul 3, 2012||Qualcomm Mems Technologies, Inc.||Method and device for multistate interferometric light modulation|
|US8243360||Sep 30, 2011||Aug 14, 2012||Qualcomm Mems Technologies, Inc.||Device having a conductive light absorbing mask and method for fabricating same|
|US8270056||Mar 23, 2009||Sep 18, 2012||Qualcomm Mems Technologies, Inc.||Display device with openings between sub-pixels and method of making same|
|US8270062||Sep 17, 2009||Sep 18, 2012||Qualcomm Mems Technologies, Inc.||Display device with at least one movable stop element|
|US8289613||Apr 13, 2011||Oct 16, 2012||Qualcomm Mems Technologies, Inc.||Electromechanical device with optical function separated from mechanical and electrical function|
|US8358266||Sep 1, 2009||Jan 22, 2013||Qualcomm Mems Technologies, Inc.||Light turning device with prismatic light turning features|
|US8405899||Jul 20, 2009||Mar 26, 2013||Qualcomm Mems Technologies, Inc||Photonic MEMS and structures|
|US8488228||Sep 28, 2009||Jul 16, 2013||Qualcomm Mems Technologies, Inc.||Interferometric display with interferometric reflector|
|US8736949||Dec 20, 2011||May 27, 2014||Qualcomm Mems Technologies, Inc.||Devices and methods for enhancing color shift of interferometric modulators|
|US8780146||Aug 26, 2010||Jul 15, 2014||E Ink Holdings Inc.||Driving member and driving member array module|
|US8797628||Jul 23, 2010||Aug 5, 2014||Qualcomm Memstechnologies, Inc.||Display with integrated photovoltaic device|
|US8885244||Jan 18, 2013||Nov 11, 2014||Qualcomm Mems Technologies, Inc.||Display device|
|US8964280||Jan 23, 2012||Feb 24, 2015||Qualcomm Mems Technologies, Inc.||Method of manufacturing MEMS devices providing air gap control|
|US8970939||Feb 16, 2012||Mar 3, 2015||Qualcomm Mems Technologies, Inc.||Method and device for multistate interferometric light modulation|
|US8979349||May 27, 2010||Mar 17, 2015||Qualcomm Mems Technologies, Inc.||Illumination devices and methods of fabrication thereof|
|US9081188||Apr 3, 2014||Jul 14, 2015||Qualcomm Mems Technologies, Inc.||Matching layer thin-films for an electromechanical systems reflective display device|
|US9121979||May 27, 2010||Sep 1, 2015||Qualcomm Mems Technologies, Inc.||Illumination devices and methods of fabrication thereof|
|US20060056000 *||Jul 15, 2005||Mar 16, 2006||Marc Mignard||Current mode display driver circuit realization feature|
|US20060262279 *||May 11, 2006||Nov 23, 2006||Iridigm Display Corporation||Interferometric modulation of radiation|
|US20140251770 *||Jul 26, 2012||Sep 11, 2014||Lior Kogut||Switching device|
|CN102211752A *||Apr 8, 2010||Oct 12, 2011||元太科技工业股份有限公司||Driving element, driving element array module and structure of driving element array module|
|CN102401994A *||Sep 7, 2010||Apr 4, 2012||上海丽恒光微电子科技有限公司||Optical modulator pixel unit and manufacturing method thereof|
|CN102401994B||Sep 7, 2010||Nov 20, 2013||上海丽恒光微电子科技有限公司||Optical modulator pixel unit and manufacturing method thereof|
|International Classification||G02B26/02, G02B26/00|
|Cooperative Classification||Y10T29/4913, Y10T29/49002, G02B19/0019, G02B26/007, G09G2300/088, G02B26/0816, G09G2300/0809, G02B26/02, G09G2300/08, G09G2300/0469, G02B26/001, G02B26/00, G09G3/3466, G09G3/3433, G09G2300/0842, G02F2203/12, G02B5/201, G02B26/06, G09G3/22, G09G3/2014, G02B26/0825, G02B26/0833, G02B26/0841, G09G2300/0426, G02F1/0128, G02F1/01, G02B27/0068|
|European Classification||G02B26/08M4, G02B26/02, G02B26/00C, G02B26/08M4E, G09G3/22, G09G3/34E8|
|Mar 30, 2007||AS||Assignment|
Owner name: IDC, LLC, CALIFORNIA
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MILES, MARK W.;REEL/FRAME:019098/0877
Effective date: 20070322
|Oct 28, 2009||AS||Assignment|
Owner name: QUALCOMM MEMS TECHNOLOGIES, INC.,CALIFORNIA
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:IDC, LLC;REEL/FRAME:023435/0918
Effective date: 20090925
|Aug 30, 2011||CC||Certificate of correction|
|Jun 24, 2014||FPAY||Fee payment|
Year of fee payment: 4