Search Images Maps Play YouTube News Gmail Drive More »
Sign in
Screen reader users: click this link for accessible mode. Accessible mode has the same essential features but works better with your reader.

Patents

  1. Advanced Patent Search
Publication numberUS20070194379 A1
Publication typeApplication
Application numberUS 10/592,431
PCT numberPCT/JP2005/003273
Publication dateAug 23, 2007
Filing dateFeb 28, 2005
Priority dateMar 12, 2004
Also published asCN102354658A, CN102856390A, CN102867855A, EP1737044A1, EP1737044A4, EP2226847A2, EP2226847A3, EP2246894A1, EP2246894B1, EP2413366A1, US20090278122, US20090280600, US20110101352, US20110201162, US20120012838, WO2005088726A1
Publication number10592431, 592431, PCT/2005/3273, PCT/JP/2005/003273, PCT/JP/2005/03273, PCT/JP/5/003273, PCT/JP/5/03273, PCT/JP2005/003273, PCT/JP2005/03273, PCT/JP2005003273, PCT/JP200503273, PCT/JP5/003273, PCT/JP5/03273, PCT/JP5003273, PCT/JP503273, US 2007/0194379 A1, US 2007/194379 A1, US 20070194379 A1, US 20070194379A1, US 2007194379 A1, US 2007194379A1, US-A1-20070194379, US-A1-2007194379, US2007/0194379A1, US2007/194379A1, US20070194379 A1, US20070194379A1, US2007194379 A1, US2007194379A1
InventorsHideo Hosono, Masahiro Hirano, Hiromichi Ota, Toshio Kamiya, Kenji Nomura
Original AssigneeJapan Science And Technology Agency
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
Amorphous Oxide And Thin Film Transistor
US 20070194379 A1
Abstract
The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.
Images(7)
Previous page
Next page
Claims(21)
1. An amorphous oxide having an electron carrier concentration less than 1018/cm3.
2. An amorphous oxide having an electron carrier concentration less than 1017/cm3.
3. An amorphous oxide having an electron carrier concentration less than 1016/cm3.
4. An amorphous oxide wherein electron mobility thereof increases with the electron carrier concentration.
5. The amorphous oxide according to claim 4, wherein the electron mobility is more than 0.1 cm2/(Vsec).
6. The amorphous oxide according to claim 5, exhibiting degenerate conduction.
7. The amorphous oxide according to claim 1, wherein the amorphous oxide is a compound that contains at least one element selected from Zn, In, and Sn as a constituent and is represented by [(Sn1-xM4x)O2]a.[In1-yM3y)2O3]b.[(Zn1-zM2z)O]c (wherein 0≦x≦1,0≦y≦1, 0≦z≦1; x, y, and z are not simultaneously 1; 0≦a≦1, 0≦b≦1, 0≦c≦1, and a+b+c=1; M4 is a group IV element having an atomic number smaller than that of Sn; M3 is Lu or a group III element having an atomic number smaller than that of In; and M2 is a group II element having an atomic number smaller than that of Zn).
8. The amorphous oxide according to claim 7, further comprising at least one element selected from group V elements M5 and W.
9. The amorphous oxide according to claim 7, wherein the amorphous oxide is a single compound represented by [(In1-yM3y)2O3(Zn1-xM2x)O]m (wherein 0≦x≦1; 0≦y≦1; x and y are not simultaneously 1; m is zero or a natural number less than 6; M3 is Lu or a group III element having an atomic number smaller than that of In; and M2 is a group II element having an atomic number smaller than that of Zn) in a crystallized state or a mixture of the compounds with different values of m.
10. The amorphous oxide according to claim 9, wherein M3 is Ga.
11. The amorphous oxide according to claim 9, wherein M2 is Mg.
12. The amorphous oxide according to claim 1, wherein the amorphous oxide is formed on a glass substrate, a metal substrate, a plastic substrate, or a plastic film.
13. A field effect transistor wherein the amorphous oxide according to claim 1 is used in a channel layer.
14. The field effect transistor according to claim 13, wherein a gate insulating layer comprises one of Al2O3, Y2O3, and HfO2 or a mixed crystal compound containing at least two of these compounds.
15. A thin film transistor comprising a source electrode, a drain electrode, a gate electrode a gate insulating film and a channel layer, wherein the channel layer comprises an amorphous oxide having an electron carrier concentration of less than 1018/cm3.
16. The thin film transistor according to claim 15, wherein the electron carrier concentration of the amorphous oxide is 10 17/cm3 or less.
17. The thin film transistor according to claim 15, wherein the electron carrier concentration of the amorphous oxide is 1016/cm3 or less.
18. The thin film transistor according to claim 15, wherein the amorphous oxide is an oxide comprising In, Ga, and Zn, and the atomic ratio In:Ga:Zn is 1:1:m (m<6).
19. The thin film transistor according to claim 15, wherein the amorphous oxide is an oxide comprising In, Ga, Zn, and Mg and the atomic ratio In:Ga:Z1-xMgx is 1:1:m (m<6), wherein 0<x≦1.
20. The thin film transistor according to claim 15, wherein the amorphous oxide is selected from InxGa1-x oxides (0≦x≦1), InxZn1-x oxides (0.2≦x≦1), InxSn1-x oxides (0.8≦x≦1), and Inx(ZnSn)1-x oxides (0.15≦x≦1).
21. The thin film transistor according to claim 15, wherein the electron mobility of the amorphous oxide increases with the electron carrier concentration.
Description
TECHNICAL FIELD

The present invention relates to amorphous oxides and thin film transistors.

BACKGROUND ART

A thin film transistor (TFT) is a three-terminal element having a gate terminal, a source terminal, and a drain terminal. It is an active element in which a semiconductor thin film deposited on a substrate is used as a channel layer for transportation of electrons or holes and a voltage is applied to the gate terminal to control the current flowing in the channel layer and switch the current between the source terminal and the drain terminal. Currently, the most widely used TFTs are metal-insulator-semiconductor field effect transistors (MIS-FETs) in which the channel layer is composed of a polysilicon or amorphous silicon film.

Recently, development of TFTs in which ZnO-based transparent conductive oxide polycrystalline thin films are used as the channel layers has been actively pursued (Patent Document 1). These thin films can be formed at low temperatures and is transparent in visible light; thus, flexible, transparent TFTs can be formed on substrates such as plastic boards and films.

However, known ZnO rarely forms a stable amorphous phase at room temperature and mostly exhibits polycrystalline phase; therefore, the electron mobility cannot be increased because of the diffusion at the interfaces of polycrystalline grains. Moreover, ZnO tends to contain oxygen defects and a large number of carrier electrons, and it is thus difficult to decrease the electrical conductivity. Therefore, it has been difficult to increase the on/off ratio of the transistors.

Patent Document 2 discloses an amorphous oxide represented by ZnxMyInzO(x+3y/2+3z/2) (wherein M is at least one element selected from Al and Ga, the ratio x/y is in the range of 0.2 to 12, and the ratio z/y is in the range of 0.4 to 1.4). However, the electron carrier concentration of the amorphous oxide film obtained herein is 1018/cm3 or more. Although this is sufficient for regular transparent electrodes, the film cannot be easily applied to a channel layer of a TFT. This is because it has been found that a TFT having a channel layer composed of this amorphous oxide film does not exhibit a sufficient on/off ratio and is thus unsuitable for TFT of a normally off type.

Patent Document 1: Japanese Unexamined Patent Application Publication No. 2003-298062

Patent Document 2: Japanese Unexamined Patent Application Publication No. 2000-044236

DISCLOSURE OF INVENTION

An object of the present invention is to provide an amorphous oxide having a low electron carrier concentration and to provide a thin film transistor having a channel layer composed of such an amorphous oxide.

The present invention provides: (1) an amorphous oxide having an electron carrier concentration less than 1018/cm3. In the present invention, the electron carrier concentration of the amorphous oxide is preferably 1017/cm3 or less or 1016/cm3 or less.

The present invention also provides: (2) an amorphous oxide in which electron mobility thereof increases with the electron carrier concentration.

The present invention also provides: (3) the amorphous oxide according to item (1) or (2) above, in which the electron mobility is more than 0.1 cm2/(Vsec).

The present invention also provides: (4) the amorphous oxide according to item (2) or (3) above, exhibiting degenerate conduction. Note that degenerate conduction used herein is defined as a state in which the thermal activation energy for temperature dependency of electrical resistance is 30 meV or less.

Another aspect of the present invention provides: (5) the amorphous oxide according to any one of items (1) to (4) above, in which the amorphous oxide is a compound that contains at least one element selected from Zn, In, and Sn as a constituent and is represented by [(Sn1-xM4x)O2]a.[In1-yM3y)2O3]b.[(Zn1-zM2z)O]c (wherein 0≦x≦1, 0≦y≦1, 0≦z≦1; x, y, and z are not simultaneously 1; 0≦a≦1, 0≦b≦1, 0≦c≦1, and a+b+c=1; M4 is a group IV element (Si, Ge, or Zr) having an atomic number smaller than that of Sn; M3 is Lu or a group III element (B, Al, Ga, or Y) having an atomic number smaller than that of In; and M2 is a group II element (Mg or Ca) having an atomic number smaller than that of Zn).

In the present invention, the amorphous oxide according (5) above may further contain at least one element selected from group V elements (V, Nb, and Ta) M5 and W.

Another aspect of the present invention provides: (6) a thin film transistor including the amorphous oxide according to any one of (1) to (4) above, in which the amorphous oxide is a single compound represented by (InM3)2O3(Zn1-xM2xO)m (wherein 0≦x≦1; m is zero or a natural number less than 6; M3 is Lu or a group III element (B, Al, Ga, or Y) having an atomic number smaller than that of In; and M2 (Mg or Ca) is a group II element having an atomic number smaller than that of Zn) in a crystallized state or a mixture of the compounds with different values of m. M3 is, for example, Ga, and M2 is, for example Mg.

The present invention also provides the amorphous oxide according to any one of (1) to (6) above formed on a glass substrate, a metal substrate, a plastic substrate, or a plastic film. The present invention also provides a field effect transistor including a channel layer composed of the amorphous oxide described above. The field effect transistor of the present invention is characterized in that the gate insulating film is one of Al2O3, Y2O3, and HfO2 or a mixed crystal compound containing at least two of these compounds.

Another aspect of the present invention provides: (7) a transparent semi-insulating amorphous oxide thin film comprising InGaZnC, in which the composition in a crystallized state is represented by InGaO3(ZnO)m (wherein m is a number less than 6 and 0≦x≦1), the electron mobility is more than 1 cm2/(Vsec) and the electron carrier concentration is less than 1018/cm3.

Furthermore, the present invention also provides: (8) a transparent semi-insulating amorphous oxide thin film comprising InGaZnMgO, in which the composition in a crystallized state is represented by InGaO3(Zn1-xMgxO)m (wherein m is a number less than 6 and 0<x≦1), the electron mobility is more than 1 cm2/(Vsec) and the electron carrier concentration is less than 1018/cm3. Moreover, the present invention also provides a method for forming the transparent semi-insulating amorphous oxide thin film in which an impurity ion for increasing the electrical resistance is not intentionally added and the deposition is conducted in an atmosphere containing oxygen gas.

A thin-film transistor according to another aspect of the present invention includes a source electrode, a drain electrode, a gate electrode a gate insulating film and a channel layer, in which the channel layer contains an amorphous oxide having an electron carrier concentration of less than 1018/cm3. Preferably, the electron carrier concentration of the amorphous oxide is 1017/cm3 or less or 1016/cm3 or less. The amorphous oxide is an oxide containing In, Ga, and Zn, in which the atomic ratio In:Ga:Zn is 1:1:m (m<6). Alternatively, the amorphous oxide is an oxide including In, Ga, Zn, and Mg, in which the atomic ratio In:Ga:Z1-xMgx is 1:1:m (m<6), wherein 0<x≦1.

The amorphous oxide is selected from InxGa1-x oxides (0≦x≦1), InxZn1-x oxides (0.2≦x≦1), InxSn1-x oxides (0.8≦x≦1), and Inx(Zn, Sn)1-x oxides (0.15≦x≦1).

In a thin film transistor of the present invention, a material in which the electron mobility increases with the electron carrier concentration can be used as the amorphous oxide.

According to the present invention, an amorphous oxide having a low electron carrier concentration can be provided, and a thin film transistor including a channel layer composed of such an amorphous oxide can be provided.

BEST MODE FOR CARRYING OUT THE INVENTION

An amorphous oxide of the present invention is characterized in that the electron carrier concentration is less than 1018/cm3. A thin film transistor (TFT) of the present invention is characterized in that an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer.

For example, as shown in FIG. 5, the TFT is made by forming a channel layer 2 on a substrate 1 and a gate insulating film 3, a gate electrode 4, a source electrode 6, and a drain electrode 5 on the channel layer 2. In this invention, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer.

The structure of the TFT to which the present invention can be applied is not limited to the staggered structure (top-gate structure) shown in FIG. 5 in which a gate insulating film and a gate terminal (electrode) are sequentially stacked on a semiconductor channel layer. For example, the TFT may have an inverted staggered structure (bottom-gate structure) in which a gate insulating film and a semiconductor channel layer are sequentially stacked on a gate terminal. The electron carrier concentration mentioned above is a value measured at room temperature. Room temperature is, for example, 25 C. and, in particular, is appropriately selected from the range of about 0 C. to about 40 C.

The electron carrier concentration of the amorphous oxide of the present invention need not be less than 1018/cm3 all through the range of 0 C. to 40 C. For example, it is sufficient if the carrier electron concentration is less than 1018/cm3 at 25 C. When the electron carrier concentration is reduced to 1017/cm3 or less and more preferably to 1016/cm3 or less, TFTs of a normally off type can be obtained in high yield. The electron carrier concentration can be determined by hall-effect measurement.

In the present invention, amorphous oxide is defined as an oxide that shows a halo pattern in an X-ray diffraction spectrum and exhibits no particular diffraction line. The lower limit of the electron carrier concentration of the amorphous oxide of the present invention is not particularly limited as long as the oxide can be used as the TFT channel layer. The lower limit is, for example, 1012/cm3.

Thus, in the present invention, the starting materials, composition ratio, production conditions, and the like of the amorphous oxide are controlled as in the individual examples described below so as to adjust the electron carrier concentration to 1012/cm3 or more but less than 1018/cm3. Preferably, the electron carrier concentration is adjusted to 1013/cm3 to 1017/cm3, and more preferably 1015/cm3 to 1016/cm3.

The electron mobility is preferably 0.1 cm2/(Vsec) or more, more preferably 1 cm2/(Vsec) or more, and most preferably 5 cm2/(Vsec) or more when measured at room temperature. The amorphous oxide exhibits increased electron mobility as the electron carrier concentration increases. The conductivity thereof tends to exhibit degenerate conduction. Degenerate conduction is defined as a state in which the thermal activation energy for temperature dependency of electrical resistance is 30 meV or less.

(Starting Materials for Amorphous Oxide)

The amorphous oxide of the present invention contains at least one element selected from Zn, In, and Sn as a constituent component and is represented by [(Sn1-xM4x)O2]a.[(In1-yM3y)2O3]b.[(Zn1-z,M2z)O]c [0≦x≦1, 0≦y≦1, 0≦z≦1; x, y, and z are not simultaneously 1; 0≦a≦1, 0≦b≦1, 0≦c≦1, and a+b+c=1; M4 is a group IV element (Si, Ge, or Zr) having an atomic number smaller than that of Sn; M3 is Lu or a group III element (B, Al, Ga, or Y) having an atomic number smaller than that of In and M2 is a group II element (Mg or Ca) having an atomic number smaller than that of Zn. The amorphous oxide may further contain at least one element selected from group V elements M5 (V, Nb, and Ta) and W. In this description, the group II, III, IV, and V elements in the periodic table are sometimes referred to as group 2, 3, 4, and 5 elements, respectively; however, the meaning is the same.

The electron carrier concentration can be further decreased by adding at least one element that can form a compound oxide, the at least one element being selected from a group 2 element M2 (M2: Mg or Ca) having an atomic number smaller than that of Zn; Lu and a group 3 element M3 (M3: B, Al, Ga, or Y) having an atomic number smaller than that of In; a group 4 element M4 (M4: Si, Ge, or Zr) having an atomic number smaller than that of Sn; and a group 5 element M5 (M5: V, Nb, and Ta) or W.

The elements M2, M3, and M4 having atomic numbers smaller than those of Zn, In, and Sn, respectively, have higher ionicity than Zn, In and Sn; thus, generation of oxygen defects is less frequent, and the electron carrier concentration can be decreased. Although Lu has a larger atomic number than Ga, the ion radius is small and the ionicity is high, thereby achieving the same functions as those of M3. M5, which is ionized at a valency of 5, strongly bonds to oxygen and rarely causes oxygen defects. Tungsten (W), which is ionized at a valency of 6, strongly bonds to oxygen and rarely causes oxygen defects.

The amorphous oxide applicable to the present invention is a single compound having a composition in a crystallized state represented by (InM3)2O3(Zn1-xM2xO)m [wherein 0≦x≦1; m is zero or a number or a natural number less than 6; M3 is Lu or a group 3 element (B, Al, Ga, or Y) having an atomic number smaller than that of In; and M2 is a group 2 element (Mg or Ca) having an atomic number smaller than that of Zn] or a mixture of compounds with different values of m. M3 is, for example, Ga. M2 is, for example, Mg.

The amorphous oxide applicable to the present invention is a unitary, binary, or ternary compound within a triangle with apexes of SnO2, In2O3, and ZnO. Among these three compounds, In2O3 has high amorphous formation capacity and can form a completely amorphous phase when In2O3 is deposited by a vapor phase method while adding approximately 0.1 Pa of water into the atmosphere.

ZnO and SnO2 in some cases do not form an amorphous phase by themselves; however, they can form an amorphous phase in the presence of In2O3 as a host oxide. In particular, of binary compositions containing two of the above-described three compounds (compositions located on the side of the triangle), the InZnO system can form an amorphous film when In is contained in an amount of about 20 at % or more, and the SnInO system can form an amorphous film when In is contained in an amount of about 80 at % or more by a vapor phase method.

In order to obtain an InZnO amorphous film by a vapor phase method, about 0.1 Pa of steam may be introduced into the atmosphere. In order to obtain an InSnO-system amorphous film by a vapor phase method, about 0.1 Pa of nitrogen gas may be introduced into the atmosphere. For the ternary composition, SnInZn, containing the three compounds, an amorphous film can be obtained by a vapor phase method when In is contained in an amount of about 15 at % in the above-described composition range. Note that at % herein indicates atomic percent with respect to the metal ions other than oxygen ions. In particular, for example, the InZnO system containing about 20 at % or more of In is equivalent to InxZn1-x (x>0.2).

The composition of the amorphous oxide film containing Sn, In, and/or Zn may contain additional elements as described below. In particular, at least one element that forms a compound oxide, the at least one element being selected from a group 2 element M2 (M2: Mg or Ca) having an atomic number smaller than that of Zn, Lu or a group 3 element M3 (M3: B, Al, Ga, or Y) having an atomic number smaller than that of In, and a group 4 element M4 (M4: Si, Ge, or Zr) having an atomic number smaller than that of Sn may be added. The amorphous oxide film of the present invention may further contain at least one element that can form a compound oxide, the at least one element being selected from group 5 elements (M5: V, Nb, and Ta) and W.

Addition of the above-described elements will increase the stability of the amorphous film and expands the composition range that can give an amorphous film. In particular, addition of highly covalent B, Si, or Ge is effective for stabilization of the amorphous phase, and a compound oxide composed of ions with largely different ion radii can stabilize the amorphous phase. For example, in the InZnO system, a stable amorphous film is rarely obtained at room temperature unless the range of In content is more than about 20 at %. However, by adding Mg in an equivalent amount to In, a stable amorphous film can be obtained at an In content of more than about 15 at %.

An example of the amorphous oxide material that can be used in the channel layer of the TFT of the present invention is described next. The amorphous oxide that can be used in the channel layer is, for example, an oxide that contains In, Ga, and Zn at an atomic ratio satisfying In:Ga:Zn=1:1:m, wherein m is a value less than 6. The value of m may be a natural number but is not necessarily a natural number. This applies to m referred to in other sections of this description. The atomic ratio can be considered as equivalent to a molar ratio.

A transparent amorphous oxide thin film whose composition in a crystallized state is represented by InGaO3(ZnO)m (wherein m is a number less than 6) maintains a stable amorphous state at high temperatures not less than 800 C. when the value of m is less than 6. However, as the value of m increases, i.e., as the ratio of ZnO to InGaO3 increases and the composition approaches to the ZnO composition, the composition tends to be more crystallizable. Thus, the value of m is preferably less than 6 for the channel layer of the amorphous TFT. A desired amorphous oxide can be obtained by adjusting the composition of the target material (e.g., a polycrystalline material) for deposition, such as sputtering deposition or pulsed laser deposition (PLD), to comply with m<6.

In the amorphous oxide described above, Zn in the composition ratio of InGaZn may be replaced by Zn1-xMgx. The possible amount of Mg for replacement is within the range of 0<x≦1. When the replacement with Mg is conducted, the electron mobility of the oxide film decreases compared to a film containing no Mg. However, the extent of decrease is small, and the electron carrier concentration can be decreased compared to when no replacement is conducted. Thus, this is more preferable for the channel layer of a TFT. The amount of Mg for replacement is preferably more than 20% and less than 85% (0.2<x<0.85 in term of x) and more preferably 0.5<x<0.85.

The amorphous oxide may be appropriately selected from In oxides, InxZn1-x oxides (0.2≦x≦1), InxSn1-x oxides (0.8≦x≦1), and Inx(Zn, Sn)1-x oxides (0.15≦x≦1). The ratio of Zn to Sn in the Inx(Zn, Sn)1-x oxides may be appropriately selected. Namely, an Inx(Zn, Sn)1-x oxide can be described as Inx(ZnySn1-y)1-x oxide, and y is in the range of 1 to 0. For an In oxide containing neither Zn nor Sn, In may be partly replaced by Ga. In this case, the oxide can be described as an InxGa1-x oxide (0≦x≦1).

(Method for Producing Amorphous Oxide)

The amorphous oxide used in the present invention can be prepared by a vapor phase deposition technique under the conditions indicated in the individual examples below. For example, in order to obtain an InGaZn amorphous oxide, deposition is conducted by a vapor phase method such as a sputtering (SP) method, a pulsed laser deposition (PLD) method, or an electron beam deposition method while using a polycrystalline sinter represented by InGaO3(ZnO)m as the target. From the standpoint of mass productivity, the sputtering method is most suitable.

During the formation of an In2O3 or InZnO amorphous oxide film or the like, oxygen radicals may be added to the atmosphere. Oxygen radicals may be added through an oxygen radical generator. When there is need to increase the electron carrier concentration after the film formation, the film is heated in a reducing atmosphere to increase the electron carrier concentration. The resulting amorphous oxide film with a different electron carrier concentration was analyzed to determine the dependency of the electron mobility on the electron carrier concentration, and the electron mobility increased with the electron carrier concentration.

(Substrate)

The substrate for forming the TFT of the present invention may be a glass substrate, a plastic substrate, a plastic film, or the like. Moreover, as described below in EXAMPLES, the amorphous oxide of the present invention can be formed into a film at room temperature. Thus, a TFT can be formed on a flexible material such as a PET film. Moreover, the above-mentioned amorphous oxide may be appropriately selected to prepare a TFT from a material that is transparent in visible light not less than 400 nm or infrared light.

(Gate Insulating Film)

The gate insulating film of the TFT of the present invention is preferably a gate insulating film composed of Al2O3, Y2O3, HfO2, or a mixed crystal compound containing at least two of these compounds. When there is a defect at the interface between the gate insulating thin film and the channel layer thin film, the electron mobility decreases and hysteresis occurs in the transistor characteristics. Moreover, leak current greatly differs according to the type of the gate insulating film. Therefore, a gate insulating film suitable for the channel layer must be selected.

Use of an Al2O3 film can decrease the leak current. Use of an Y2O3 film can reduce the hysteresis. Use of a high dielectric constant HfO2 film can increase the field effect mobility. By using a film composed of a mixed crystal of these compounds, a TFT having small leak current and hysteresis and large field effect mobility can be produced. the process for forming the gate insulating film and the process for forming the channel layer can be conducted at room temperature; thus, a TFT of a staggered or inverted staggered structure can be formed.

(Transistor)

When a field effect transistor includes a channel layer composed of an amorphous oxide film having an electron carrier concentration of less than 1018/cm3, a source terminal, a drain terminal, and a gate terminal disposed on the gate insulating film, the current between the source and drain terminals can be adjusted to about 10−7 A when a voltage of about 5V is applied between the source and drain terminals without application of a gate voltage. The theoretical lower limit of the electron carrier concentration is 105/cm3 or less assuming that the electrons in the valence band are thermally excited. The actual possibility is that the lower limit is about 1012/cm3.

When Al2O3, Y2O3, or HfO2 alone or a mixed crystal compound containing at least two of these compounds is used in the gate insulating layer, the leak voltage between the source gate terminals and the leak voltage between the drain and gate terminals can be adjusted to about 10−7 A, and a normally off transistor can be realized.

The electron mobility of the oxide crystals increases as the overlap of the s orbits of the metal ion increases. The oxide crystals of Zn, In, and Sn having large atomic numbers exhibit high electron mobility of 0.1 to 200 cm2/(Vsec). Since ionic bonds are formed between oxygen and metal ions in an oxide, electron mobility substantially comparable to that in a crystallized state can be exhibited in an amorphous state in which there is no directionality of chemical bonding, the structure is random, and the directions of the bonding are nonuniform. In contrast, by replacing Zn, In, and Sn each with an element having a smaller atomic number, the electron mobility can be decreased. Thus, by using the amorphous oxide described above, the electron mobility can be controlled within the range of about 0.01 cm2/(Vsec) to 20 cm2/(Vsec).

In a typical compound, the electron mobility decreases as the carrier concentration increases due to the dispersion between the carriers. In contrast, the amorphous oxide of the present invention exhibits increased electron mobility with the increasing electron carrier concentration. The physical principle that lies behind this phenomenon is not clearly identified.

Once a voltage is applied to the gate terminal, electrons are injected into the amorphous oxide channel layer, and current flows between the source and drain terminals, thereby allowing the part between the source and drain terminals to enter an ON state. According to the amorphous oxide film of the present invention, since the electron mobility increases with the electron carrier concentration, the current that flows when the transistor is turned ON can be further increased. In other words, the saturation current and the on/off ratio can be further increased. When the amorphous oxide film having high electron mobility is used as the channel layer of a TFT, the saturation current can be increased and the switching rate of the TFT can be increased, thereby achieving high-speed operation.

For example, when the electron mobility is about 0.01 cm2/(Vsec), the material can be used in a channel layer of a TFT for driving a liquid crystal display element. By using an amorphous oxide film having an electron mobility of about 0.1 cm2/(Vsec), a TFT that has performance comparable or superior to the TFT using an amorphous silicon film and that can drive a display element for moving images can be produced.

In order to realize a TFT that requires large current, e.g., for driving a current-driven organic light-emitting diode, the electron mobility is preferably more than 1 cm2/(Vsec). Note than when the amorphous oxide of the present invention that exhibits degenerate conduction is used in the channel layer, the current that flows at a high carrier concentration, i.e., the saturation current of the transistor, shows decreased dependency on temperature, and a TFT with superior temperature characteristics can be realized.

EXAMPLES Example 1 Preparation of Amorphous InGaZnO Thin Film by PLD Method

A film was formed in a PLD device shown in FIG. 7. In the drawing, reference numeral 701 denotes a rotary pump (RP), 702 denotes a turbo molecular pump (TMP), 703 denotes a preparation chamber, 704 denotes en electron gun for RHEED, 705 denotes a substrate holder for rotating and vertically moving the substrate, 706 denotes a laser entrance window, 707 denotes a substrate, 708 denotes a target, 709 denotes a radical source, 710 denotes a gas inlet, 711 denotes a target holder for rotating and vertically moving the target, 712 denotes a by-pass line, 713 denotes a main line, 714 denotes a turbo molecular pump (TMP), 715 denotes a rotary pump (RP), 716 denotes a titanium getter pump, and 717 denotes a shutter. In the drawing, 718 denotes ionization gauge (IG), 719 denotes a Pirani gauge (PG), 720 denotes a Baratron gauge (BG), and 721 denotes a deposition chamber.

An InGaZnC amorphous oxide semiconductor thin film was formed on a SiO2 glass substrate (# 1737 produced by Corning) by a pulsed laser deposition method using a KrF excimer laser. As the pre-deposition treatment, the substrate was degreased with ultrasonic waves in acetone, ethanol, and ultrapure water for 5 minutes each, and then dried in air at 100 C.

An InGaO3(ZnO)4 sinter target (size: 20 mm in dia., 5 mm in thickness) was used as the polycrystalline target. This target was prepared by wet-mixing the starting materials, In2O3:Ga2O3:ZnO (each being a 4N reagent), in a solvent (ethanol), calcining (1000 C., 2 h) the resulting mixture, dry-milling the calcined mixture, and sintering the resulting mixture (1550 C., 2 h). The electrical conductivity of the target obtained was 90 (S/cm).

The ultimate vacuum of the deposition chamber was adjusted to 210−6 (Pa), and the oxygen partial pressure during the deposition was controlled to 6.5 (Pa) to form a film. The oxygen partial pressure inside the chamber 721 was 6.5 Pa, and the substrate temperature was 25 C. The distance between the target 708 and the substrate 707 for deposition was 30 (mm). The power of the KrF excimer laser entering from the entrance window 716 was in the range of 1.5 to 3 (mJ/cm2/pulse). The pulse width was 20 (nsec), the repetition frequency was 10 (Hz), and the beam spot diameter was 11 (mm square). A film was formed at a deposition rate of 7 (nm/min).

The resulting thin film was subjected to grazing incidence x-ray diffraction (thin film method, incident angle: 0.5), but no clear diffraction peak was observed. Thus, the InGaZnO thin film obtained was assumed to be amorphous. The X-ray reflectance was determined, and the pattern was analyzed. It was observed that the root mean square roughness (Rrms) of the thin film was about 0.5 nm, and the film thickness was about 120 nm. The results of the fluorescence X-ray showed that the metal composition ratio of the thin film was In:Ga:Zn=0.98:1.02:4. The electrical conductivity was less than about 10−2 S/cm. The electron carrier concentration and the electron mobility were presumably about 1016/cm3 or less and about 5 cm2/(Vsec), respectively.

Based on the analysis of the optical absorption spectrum, the energy width of the forbidden band of the amorphous thin film prepared was determined to be about 3 eV. Based on these values, it was found that the InGaZnO thin film had an amorphous phase close to the composition of the crystals of InGaO3(ZnO)4, had fewer oxygen defects, and was a flat, transparent thin film with low electrical conductivity.

Specific description is now presented with reference to FIG. 1. FIG. 1 shows a change in electron carrier concentration of the oxide formed into a film against changes in oxygen partial pressure when an InGaZnO transparent amorphous oxide thin film represented by InGaO3(ZnO)4 in an assumed crystal state is formed under the same conditions as in this EXAMPLE.

As shown in FIG. 1, the electron carrier concentration decreased to less than 1018/cm3 when the film was formed in an atmosphere at a high oxygen partial pressure of more than 4.5 Pa under the same conditions as this example. In this case, the temperature of the substrate was maintained substantially at room temperature without intentional heating. The substrate temperature is preferably less than 100 C. when a flexible plastic film is used as the substrate.

By further increasing the oxygen partial pressure, the electron carrier concentration was further decreased. For example, as shown in FIG. 1, the number of the electron carriers of the InGaO3(ZnO)4 thin film deposited at a substrate temperature of 25 C. and an oxygen partial pressure of 5 Pa decreased to 1016/cm3.

The thin film obtained had an electron mobility exceeding 1 cm2/(Vsec), as shown in FIG. 2. However, according to the pulsed laser deposition method of the present invention, the surface of the film deposited will have irregularities at an oxygen partial pressure of 6.5 Pa or more, and thus, the it is difficult to use the thin film as a channel layer of a TFT. Therefore, by using an InGaZnO transparent amorphous oxide thin film having a composition of InGaO3(ZnO)m (m is less than 6) in a crystal state prepared by a pulsed laser deposition method in an atmosphere having an oxygen partial pressure exceeding 4.5 Pa, preferably exceeding 5 Pa, but less than 6.5 Pa, a normally off transistor can be prepared.

The electron mobility of this thin film was more than 1 cm2/(Vsec), and the on/off ratio thereof was increased to over 103. As is described above, in forming an InGaZn oxide film by a PLD method under the conditions set forth in this example, the oxygen partial pressure is preferably controlled to not less than 4.5 Pa but less than 6.5 Pa. Whether an electron carrier concentration of 1018/cm3 is realized depends on the conditions of the oxygen partial pressure, the configuration of the deposition device, the materials for deposition, the composition, and the like.

Next, in the above-described device at an oxygen partial pressure of 6.5 Pa, an amorphous oxide was made and a top-gate MISFET element shown in FIG. 5 was formed. In particular, a semi-insulating amorphous InGaO3(ZnO)4 film having a thickness of 120 nm for use as a channel layer (2) was formed on a glass substrate (1) by the above-described method for making the amorphous InGaZnO thin film.

On this film, InGaO3(ZnO)4 having a high electrical conductivity and a gold film each 30 nm in thickness were deposited by a pulsed laser deposition method while controlling the oxygen partial pressure inside the chamber to less than 1 Pa. A drain terminal (5) and a source terminal (6) were formed by a photolithographic method and a lift-off method.

Lastly, an Y2O3 film (thickness: 90 nm, relative dielectric constant: about 15, leak current density: 10−3 A/cm2 upon application of 0.5 MV/cm) for use as a gate insulating film (3) was deposited by an electron beam deposition method, and gold was deposited on the Y2O3 film. A gate terminal (4) was formed by a photolithographic method and a lift-off method.

(Evaluation of Characteristics of MISFET Element)

FIG. 6 shows the current-voltage characteristics of MISFET elements measured at room temperature. Since the drain current IDS increased with the drain voltage VDS, the channel was proved to be an n-type semiconductor. This is consistent with the fact that the amorphous InGaZnO semiconductor is of an n-type. IDS was saturated (pinch-off) at VDS=about 6 V, which was a typical behavior for semiconductor transistors. The gain characteristic was determined, and the threshold value of the gate voltage VGS when VDS=4 V was applied was about −0.5 V. Upon application of VG=10 V, current of IDS=1.010−5 A flowed. This is because carriers were induced in the InGaZnO amorphous semiconductor thin film, i.e., an insulator, due to the gate bias. The on/off ratio of the transistor exceeded 103. The field effect mobility was determined from the output characteristics. As a result, a field effect mobility of about 7 cm2(Vs)−1 was obtained in the saturation region.

The same measurements were carried out on the element while irradiating the element with visible light, but no change in transistor characteristics was observed. According to the present example, a thin film transistor having a channel layer exhibiting a low electron carrier concentration, a high electrical resistance, and high electron mobility can be realized. Note that the above-described amorphous oxide showed excellent characteristics in that the electron mobility increased with the electron carrier concentration and that degenerate conduction was exhibited.

In this example, the thin film transistor was formed on the glass substrate. Since the film can be formed at room temperature, a substrate such as a plastic board or a film can be used. The amorphous oxide obtained in this example absorbs little visible light; thus, a transparent, flexible TFT can be made.

Example 2 Formation of Amorphous InGaO3(ZnO) and InGaO3(ZnO)4 Oxide Films by PLD Method

InZnGaO amorphous oxide films were deposited on glass substrates (#1737 produced by Corning) by using polycrystalline sinters represented by InGaO3(ZnO) and InGaO3(ZnO)4 as the targets by a PLD method using KrF excimer laser. The same PLD deposition device as shown in EXAMPLE 1 was used, and the deposition was conducted under the same conditions. The substrate temperature during the deposition was 25 C.

Each film obtained thereby was subjected to grazing incidence x-ray diffraction (thin film method, incident angle: 0.5) for the film surface. No clear diffraction peak was detected. The InZnGaO films prepared from the two targets were both amorphous.

The InZnGaO amorphous oxide films on the glass substrates were each analyzed to determine the x-ray reflectance. Analysis of the pattern found that the root mean average roughness (Rrms) of the thin film was about 0.5 mm and that the thickness was about 120 nm. Fluorescence x-ray analysis (XRF) showed that the ratio of the metal atoms of the film obtained from the target composed of the polycrystalline sinter represented by InGaO3(ZnO) was In:Ga:Zn=1.1:1.1:0.9 and that the ratio of the metal atoms of the film obtained from the target composed of the polycrystalline sinter represented by InGaO3(ZnO)4 was In:Ga:Zn=0.98:1.02:4.

The electron carrier concentration of the amorphous oxide film obtained from the target composed of the polycrystalline sinter represented by InGaO3(ZnO)4 was measured while changing the oxygen partial pressure of the atmosphere during the deposition. The results are shown in FIG. 1. By forming the film in the atmosphere having an oxygen partial pressure exceeding 4.5 Pa, the electron carrier concentration could be decreased to less than 1018/cm3. In this case, the temperature of the substrate was maintained substantially at room temperature without intentional heating. When the oxygen partial pressure was less than 6.5 Pa, the surface of the amorphous oxide film obtained was flat.

When the oxygen partial pressure was 5 Pa, the electron carrier concentration and the electrical conductivity of the amorphous oxide film obtained from the target composed of the polycrystalline sinter represented by InGaO3(ZnO)4 were 1016/cm3 and 10−2 S/cm, respectively. The electron mobility was presumably about 5 cm2/(Vsec). Based on the analysis of the optical absorption spectrum, the energy width of the forbidden band of the amorphous thin film prepared was determined to be about 3 eV. The electron carrier concentration could be further decreased as the oxygen partial pressure was increased from 5 Pa.

As shown in FIG. 1, the InZnGaO amorphous oxide film deposited at a substrate temperature of 25 C. and an oxygen partial pressure of 6 Pa exhibited a decreased electron carrier concentration of 81015/cm3 (electrical conductivity: about 810−3S/cm). The resulting film was assumed to have an electron mobility of more than 1 cm2/(Vsec). However, according to the PLD method, irregularities were formed in the surface of the film deposited at an oxygen partial pressure of 6.5 Pa or more, and thus it was difficult to use the film as the channel layer of the TFT.

The relationship between the electron carrier concentration and the electron mobility of the InZnGaO amorphous oxide film prepared from the target composed of the polycrystalline sinter represented by InGaO3(ZnO)4 at different oxygen partial pressures was investigated. The results are shown in Table 2. When the electron carrier concentration increased from 1016/cm3 to 1020/cm3, the electron mobility increased from about 3 cm2/(Vsec) to about 11 cm2/(Vsec). The same tendency was observed for the amorphous oxide film prepared from the target composed of the polycrystalline sinter represented by InGaO3(ZnO).

An InZnGaO amorphous oxide film formed on a polyethylene terephthalate (PET) film having a thickness of 200 μm instead of the glass substrate also showed similar characteristics.

Example 3 Formation of InZnGaO Amorphous Oxide Film by SP Method

Formation of a film by a high-frequency SP method using argon gas as the atmosphere gas is described. The SP method was conducted using the device shown in FIG. 8. In the drawing, reference numeral 807 denotes a substrate for deposition, 808 denotes a target, 805 denotes a substrate holder equipped with a cooling mechanism, 814 denotes a turbo molecular pump, 815 denotes a rotary pump, 817 denotes a shutter, 818 denotes an ionization gauge, 819 denotes a Pirani gauge, 821 denotes a deposition chamber, and 830 denotes a gate valve. A SiO2 glass substrate (#1737 produced by Corning) was used as the substrate 807 for deposition. As the pre-deposition treatment, the substrate was degreased with ultrasonic waves in acetone, ethanol, and ultrapure water for 5 minutes each, and then dried in air at 100 C.

An InGaO3(ZnO)4 polycrystalline sinter (size: 20 mm in dia., 5 mm in thickness) was used as the target material. The sinter was prepared by wet-mixing the starting materials, In2O3:Ga2O3:ZnO (each being a 4N reagent), in a solvent (ethanol), calcining (1000 C., 2 h) the resulting mixture, dry-milling the calcined mixture, and sintering the resulting mixture (1550 C., 2 h). The target 808 had an electrical conductivity of 90 (S/cm) and was in a semi-insulating state.

The ultimate vacuum inside the deposition chamber 821 was 110−4 (Pa). The total pressure of the oxygen gas and the argon gas during the deposition was controlled at a predetermined value within the range of 4 to 0.110−1 (Pa), and the oxygen partial pressure was changed in the range of 10−3 to 210−1 (Pa) by changing the partial pressure ratio of the argon gas and oxygen. The substrate temperature was room temperature, and the distance between the target 808 and the substrate 807 for deposition was 30 (mm). The current injected was RF 180 W, and the deposition rate was 10 (nm/min).

The resulting film was subjected to grazing incidence x-ray diffraction (thin film method, incident angle lang=EN−US>0.5) for the film surface, but no clear diffraction peak was observed. Thus, the InZnGaO thin film obtained was proved to be amorphous. The X-ray reflectance was determined, and the pattern was analyzed. It was observed that the root mean square roughness (Rrms) of the thin film was about 0.5 nm, and the film thickness was about 120 nm. The results of the fluorescence X-ray showed that the metal composition ratio of the thin film was In:Ga:Zn=0.98:1.02:4.

The electrical conductivity of the amorphous oxide film obtained by changing the oxygen partial pressure in the atmosphere during the deposition was measured. The results are shown in FIG. 3. As shown in FIG. 3, the electrical conductivity could be decreased to less than 10 S/cm by forming the film in an atmosphere at a high oxygen partial pressure exceeding 310−2 Pa.

By further increasing the oxygen partial pressure, the number of electron carriers could be decreased. For example, as shown in FIG. 3, the electrical conductivity of an InGaO3(ZnO)4 thin film deposited at a substrate temperature of 25 C. and an oxygen partial pressure of 10−1 Pa was decreased to about 10−10 S/cm. An InGaO3(ZnO)4 thin film deposited at an oxygen partial pressure exceeding 10−1 Pa had excessively high electrical resistance and thus the electrical conductivity thereof could not be measured. However, extrapolation was conducted for the value observed from a film having a high electron carrier concentration, and the electron mobility was assumed to be about 1 cm2/(Vsec).

In short, a normally off transistor having an on/off ratio exceeding 103 could be made by using a transparent amorphous oxide thin film which was composed of InGaZnO prepared by a sputter deposition method in argon gas atmosphere at an oxygen partial pressure more than 310−2 Pa, preferably more than 510−1 Pa, and which was represented by InGaO3(ZnO)4 (m is a natural number less than 6) in a crystallized state.

When the device and starting materials set forth in this example are used, the oxygen partial pressure during the sputter deposition is, for example, in the range of 310−2 Pa to 510−1 Pa. The electron mobility of the thin films prepared by the pulsed laser deposition method and the sputtering method increases with the number of the conduction electrons, as shown in FIG. 2.

As described above, by controlling the oxygen partial pressure, oxygen defects can be reduced, and therefore the electron carrier concentration can be reduced. Unlike in the polycrystalline state, in the amorphous state, there is essentially no grain interface; therefore, an amorphous thin film with high electron mobility can be obtained. Note that when a polyethylene terephthalate (PET) film having a thickness of 200 μm was used instead of the glass substrate, the resulting InGaO3(ZnO)4 amorphous oxide thin film exhibited similar characteristics.

Example 4 Formation of InZnGaMgO Amorphous Oxide Film by PLD Method

Formation of an InGaO3(Zn1-xMgxO)4 film (0<x<1) on a glass substrate by a PLD method is described. The same deposition device shown in FIG. 7 was used as the deposition device. A SiO2 glass substrate (#1737 produced by Corning) was prepared as the substrate for deposition. As the pre-deposition treatment, the substrate was degreased with ultrasonic waves in acetone, ethanol, and ultrapure water for 5 minutes each, and then dried in air at 100 C.

An InGa(Zn1-xMgxO)4 (0<x<1) sinter (size: 20 mm in dia., 5 mm in thickness) was used as the target. The target was prepared by wet-mixing the starting materials, In2O3:Ga2O3:ZnO:MgO (each being a 4N reagent), in a solvent (ethanol), calcining (1000 C., 2 h) the resulting mixture, dry-milling the calcined mixture, and sintering the resulting mixture (1550 C., 2 h).

The ultimate vacuum inside the deposition chamber was 210−6 (Pa), and the oxygen partial pressure during the deposition was 0.8 (Pa). The substrate temperature was room temperature (25 C.), and the distance between the target and the substrate for deposition was 30 (mm). The power of the KrF excimer laser was 1.5 (mJ/cm2/pulse), the pulse width was 20 (nsec), the repetition frequency was 10 (Hz), and the beam spot diameter was 11 (mm square). The deposition rate was 7 (nm/min).

The resulting film was subjected to grazing incidence x-ray diffraction (thin film method, incident angle: 0.5) for the film surface, but no clear diffraction peak was observed. Thus, the InZnGaMgO thin film obtained was proved to be amorphous. The surface of the resulting film was flat.

The dependency on the value x of the electrical conductivity, electron carrier concentration, and electron mobility of InZnGaMgO amorphous oxide films deposited in atmosphere at an oxygen partial pressure of 0.8 Pa was investigated by using targets of different x values. Note that a high-resistance amorphous InGaO3(Zn1-xMgxO)m film could be obtained at an oxygen partial pressure of less than 1 Pa as long as the polycrystalline InGaO3(Zn1-xMgxO)m (m is a natural number less than 6; 0<x≦1) was used as the target.

The results are shown in FIG. 4. The results showed that the electron carrier concentration of an amorphous oxide film deposited by a PLD method in an atmosphere at an oxygen partial pressure of 0.8 Pa could be reduced to less than 1018/cm3 when the value x was more than 0.4. The electron mobility of the amorphous oxide film with x exceeding 0.4 was more than 1 cm2/(Vsec). As shown in FIG. 4, when a target in which Zn was substituted with 80 at % Mg was used, the electron carrier concentration of the film obtained by the pulsed laser deposition method in an atmosphere at an oxygen partial pressure of 0.8 Pa could be reduced to less than 1016/cm3.

Although the electron mobility of these films is low compared to that of Mg-free films, the degree of decrease is small, while the electron mobility at room temperature is about 5 cm2/(Vsec), i.e., higher than that of amorphous silicon by one order of magnitude. When deposition is conducted under the same conditions, the electrical conductivity and the electron mobility both decrease with an increase in Mg content. Thus, the Mg content is preferably more than 20 at % but less than 85 at % (0.2<x<0.85 in terms of x), and more preferably 0.5<x<0.85.

An InGaO3(Zn1-xMgxO)4 (0<x<1) amorphous oxide film formed on a polyethylene terephthalate (PET) film having a thickness of 200 μm instead of the glass substrate also showed similar characteristics.

Example 5 Formation of In2O3 Amorphous Oxide Film by PLD

Formation of an indium oxide film is now described. The deposition device shown in FIG. 7 was used as the deposition device. A SiO2 glass substrate (#1737 produced by Corning) was prepared as the substrate for deposition. As the pre-deposition treatment, the substrate was degreased with ultrasonic waves in acetone, ethanol, and ultrapure water for 5 minutes each, and then dried in air at 100 C.

An In2O3 sinter (size: 20 mm in dia., 5 mm in thickness) was used as the target. The target was prepared by calcining the starting material In2O3 (a 4N reagent) (1000 C., 2 h), dry milling the calcined material, and sintering the resulting material (1550 C., 2 h).

The ultimate vacuum inside the deposition chamber was 210−6 (Pa), and the oxygen partial pressure during the deposition was 5 (Pa). The steam partial pressure was 0.1 (Pa), and 200 W was applied to the oxygen radical generator to produce oxygen radicals. The substrate temperature was room temperature. The distance between the target and the substrate for deposition was 40 (mm). The power of the KrF excimer laser was 0.5 (mJ/cm2/pulse), the pulse width was 20 (nsec), the repetition frequency was 10 (Hz), and the beam spot diameter was 11 (mm square). The deposition rate was 3 (nm/min).

The resulting film was subjected to grazing incidence x-ray diffraction (thin film method, incident angle: 0.5) for the film surface, but no clear diffraction peak was observed. Thus, the InO thin film obtained was proved to be amorphous. The film thickness was 80 nm. The electron carrier concentration and the electron mobility of the InO amorphous oxide film obtained were 51017/cm3 and about 7 cm2/(Vsec), respectively.

Example 6 Formation of InSnO Amorphous Oxide Film by PLD

Deposition of an InSnO amorphous oxide film having a thickness of 200 μm by a PLD method is described. A SiO2 glass substrate (#1737 produced by Corning) was prepared as the substrate for deposition. As the pre-deposition treatment, the substrate was degreased with ultrasonic waves in acetone, ethanol, and ultrapure water for 5 minutes each, and then dried in air at 100 C.

An In2O3SnO2 sinter (size: 20 mm in dia., 5 mm in thickness) was prepared as the target by wet-mixing the starting materials, In2O3SnO2 (a 4N reagent), in a solvent (ethanol), calcining the resulting mixture (1000 C., 2 h), dry milling the calcined mixture, and sintering the resulting mixture (1550 C., 2 h). The composition of the target was (In0.9Sn0.1)2O3.1 polycrystal.

The ultimate vacuum inside the deposition chamber was 210−6 (Pa), the oxygen partial pressure during the deposition was 5 (Pa), and the nitrogen partial pressure was 0.1 (Pa). Then 200 W is applied to the oxygen radical generator to produce oxygen radicals. The substrate temperature during the deposition was room temperature. The distance between the target and the substrate for deposition was 30 (mm). The power of the KrF excimer laser was 1.5 (mJ/cm2/pulse), the pulse width was 20 (nsec), the repetition frequency was 10 (Hz), and the beam spot diameter was 11 (mm square).

The deposition rate was 6 (nm/min). The resulting film was subjected to grazing incidence x-ray diffraction (thin film method, incident angle: 0.5) for the film surface, but no clear diffraction peak was observed. Thus, the InSnO thin film obtained was proved to be amorphous. The electron carrier concentration and the electron mobility of the InSnO amorphous oxide film obtained were 81017/cm3 and about 5 cm2/(Vsec), respectively. The film thickness was 100 nm.

Example 7 Formation of InGaO Amorphous Oxide Film by PLD Method

Deposition of an indium gallium oxide is described next. A SiO2 glass substrate (#1737 produced by Corning) was prepared as the substrate for deposition. As the pre-deposition treatment, the substrate was degreased with ultrasonic waves in acetone, ethanol, and ultrapure water for 5 minutes each, and then dried in air at 100 C.

A (In2O3)1-x(Ga2O3)x (x=0 to 1) sinter was prepared as the target (size: 20 mm in dia., 5 mm in thickness). For example, when x=0.1, the target was an (In0.9Ga0.1)2O3 polycrystalline sinter. This target was obtained by wet-mixing the starting materials, In2O3Ga2O2 (4N reagent), in a solvent (ethanol), calcining the resulting mixture (1000 C., 2 h), dry-milling the calcined mixture, and sintering the resulting mixture (1550 C., 2 h).

The ultimate vacuum inside the deposition chamber was 210−6 (Pa), and the oxygen partial pressure during the deposition was 1 (Pa). The substrate temperature during the deposition was room temperature. The distance between the target and the substrate for deposition was 30 (mm). The power of the KrF excimer laser was 1.5 (mJ/cm2/pulse), the pulse width was 20 (nsec), the repetition frequency was 10 (Hz), and the beam spot diameter was 11 (mm square). The deposition rate was 6 (nm/min).

The resulting film was subjected to grazing incidence x-ray diffraction (thin film method, incident angle: 0.5) for the film surface, but no clear diffraction peak was observed. Thus, the InGaO thin film obtained was proved to be amorphous. The film thickness was 120 nm. The electron carrier concentration and the electron mobility of the InGaO amorphous oxide film obtained were 81016/cm3 and about 1 cm2/(Vsec), respectively.

Example 8 Preparation of TFT Element (Glass Substrate) Using InZnGaO Amorphous Oxide Film

A top-gate TFT element shown in FIG. 5 was prepared. First, an InZnGaO amorphous film 120 nm in thickness for use as a channel layer (2) was formed on a glass substrate (1) by a method of preparing the InGaZnO amorphous oxide film according to EXAMPLE 2 at an oxygen partial pressure of 5 Pa while using a polycrystalline sinter represented by InGaO3(ZnO)4 as the target.

An InGaZnO amorphous film having high electrical conductivity and a gold film each 30 nm in thickness were deposited on the InGaZnO amorphous film by a PLD method while controlling the oxygen partial pressure inside the chamber to less than 1 Pa, and a drain terminal (5) and a source terminal (6) were formed by a photolithographic method and a lift-off method.

Lastly, an Y2O3 film (thickness: 90 nm, relative dielectric constant: about 15, leak current density: 10−3A/cm2 upon application of 0.5 MV/cm) for use as a gate insulating film (3) was formed by an electron beam deposition method, and gold was deposited on the Y2O3 film. A gate terminal (4) was formed by a photolithographic method and a lift-off method. The channel length was 50 μm and the channel width was 200 μm.

(Evaluation of Characteristics of TFT Element)

FIG. 6 shows the current-voltage characteristic of the TFT element measured at room temperature. Since the drain current IDS increased with the drain voltage VDS, the channel was found to be of an n-conductivity type. This is consistent with the fact that the amorphous InGaZnO oxide film is an n-type conductor. IDS was saturated (pinch-off) at about VDS=6 V, which was a typical behavior for semiconductor transistors. The gain characteristic was determined, and the threshold value of the gate voltage VGS when VDS=4 V was applied was about −0.5 V. Upon application of VG=10 V, current of IDS=1.010−5 A flowed. This is because carriers were induced in the InGaZnO amorphous semiconductor thin film, i.e., an insulator, due to the gate bias. The on/off ratio of the transistor exceeded 103. The field effect mobility was determined from the output characteristics. As a result, a field effect mobility of about 7 cm2(Vs)−1 was obtained in the saturation region.

The same measurements were carried out on the element while irradiating the element with visible light, but no change in transistor characteristics was observed. Note that the film can be used as a channel layer of a TFT by controlling the electron carrier concentration of the amorphous oxide to less than 1018/cm3. An electron carrier concentration of 1017/cm3 or less was more preferable, and an electron carrier density of 1016/cm3 or less was yet more preferable.

Example 9 Preparation of TFT Element Using InZnGaO Amorphous Oxide Film

A top-gate TFT element shown in FIG. 5 was prepared. In particular, an InZnGaO amorphous oxide film 120 nm in thickness for use as a channel layer (2) was formed on a polyethylene terephthalate (PET) film (1) by a deposition method of EXAMPLE 2 in an atmosphere at an oxygen partial pressure of 5 Pa using a polycrystalline sinter represented by InGaO3(ZnO) as the target.

An InZnGaO amorphous oxide film having high electrical conductivity and a gold film each 30 nm in thickness were deposited on the InZnGaO amorphous oxide film by the PLD method at an oxygen partial pressure inside the chamber of less than 1 Pa, and a drain terminal (5) and a source terminal (6) were formed by a photolithographic method and a lift-off method.

Lastly, a gate insulating film (3) was formed by an electron beam deposition method and gold is deposited thereon. A gate terminal (4) was then formed by a photolithographic method and a lift-off method. The channel length was 50 μm and the channel width was 200 μm. Three types of TFTs with the above-described structure were prepared using Y2O3 (thickness: 140 nm), Al2O3 (thickness: 130 nm) and HfO2 (thickness: 140 nm), respectively.

(Evaluation of Characteristics of TFT Element)

The current-voltage characteristic of the TFT element measured at room temperature was similar to one shown in FIG. 6. Namely, since the drain current IDS increased with the drain voltage VDS, the channel was found to be of an n-conductivity type. This is consistent with the fact that the amorphous InGaZnO amorphous oxide film is an n-type conductor. IDS was saturated (pinch-off) at VDS=about 6 V, which was a typical behavior for semiconductor transistors. When Vg=0 V, current of Ids=10−8 A flowed, and when Vg=10 V, current of Ids=2.010−5 A flowed. This is because carriers were induced in the InGaZnO amorphous oxide thin film, i.e., an insulator, due to the gate bias. The on/off ratio of the transistor exceeded 103. The field effect mobility was determined from the output characteristics. As a result, a field effect mobility of about 7 cm2 (Vs)−1 was obtained in the saturation region.

The element formed on the PET film was inflected at a radius of curvature of 30 mm, and the same transistor characteristic was measured. No change in transistor characteristic was observed.

The TFT including the gate insulating film made from the Al2O3 film also showed similar transistor characteristics to those shown in FIG. 6. When Vg=0 V, current of Ids=10−8 A flowed, and when Vg=10 V, current of Ids=5.010−6 A flowed. The on/off ratio of the transistor exceeded 102. The field effect mobility was determined from the output characteristics. As a result, a field effect mobility of about 2 cm2(Vs)−1 was obtained in the saturation region.

The TFT including the gate insulating film made from the HfO2 film also showed similar transistor characteristics to those shown in FIG. 6. When Vg=0 V, current of Ids=10−8 A flowed, and when Vg=10 V, current of Ids=1.010−6 A flowed. The on/off ratio of the transistor exceeded 102. The field effect mobility was determined from the output characteristics. As a result, a field effect mobility of about 10 cm2 (Vs)−1 was obtained in the saturation region.

Example 10 Preparation of TFT Element Using In2O3 Amorphous Oxide Film by PLD Method

A top-gate TFT element shown in FIG. 5 was prepared. First, an In2O3 amorphous oxide film 80 nm in thickness for use as a channel layer (2) was formed on a polyethylene terephthalate (PET) film (1) by the deposition method of EXAMPLE 5.

An In2O3 amorphous oxide film having high electrical conductivity and a gold layer each 30 nm in thickness were formed on this In2O3 amorphous oxide film by the PLD method at an oxygen partial pressure inside the chamber of less than 1 Pa while applying zero voltage to the oxygen radical generator. A drain terminal (5) and a source terminal (6) were then formed by a photolithographic method and a lift-off method.

Lastly, an Y2O3 film for use as a gate insulating film (3) was formed by an electron beam deposition method, and gold was deposited on the Y2O3 film. A gate terminal (4) was formed by a photolithographic method and a lift-off method.

(Evaluation of Characteristics of TFT Element)

The current-voltage characteristics of the TFT element formed on the PET film were measured at room temperature. Since the drain current IDS increased with the drain voltage VDS, the channel was found to be of an n-conductivity type. This is consistent with the fact that the amorphous InO amorphous oxide film is an n-type conductor. IDS was saturated (pinch-off) at VDS=about 5 V, which was a typical behavior for semiconductor transistors. When Vg=0 V, current of 210−8 A flowed, and when Vg=10 V, current IDS=2.010−6 A flowed. This is because carriers were induced in the InO amorphous oxide thin film, i.e., an insulator, due to the gate bias. The on/off ratio of the transistor was about 102. The field effect mobility was determined from the output characteristics. As a result, a field effect mobility of about 10 cm2(Vs)−1 was obtained in the saturation region.

The TFT element formed on a glass substrate showed similar characteristics. The element formed on the PET film was inflected at a radius of curvature of 30 mm, and the same transistor characteristics were measured. No change in transistor characteristics was observed.

Example 11 Preparation of TFT Element Using InSnO Amorphous Oxide Film by PLD Method

A top gate TFT element shown in FIG. 5 was prepared. In particular, an InSnO amorphous oxide film 100 nm in thickness for use as a channel layer (2) was formed on a polyethylene terephthalate (PET) film (1) by a deposition method of EXAMPLE 6.

An InSnO amorphous oxide film having high electrical conductivity and a gold film each 30 nm in thickness were deposited on this InSnO amorphous oxide film by the PLD method at an oxygen partial pressure inside the chamber of less than 1 Pa while applying zero voltage to the oxygen radical generator. A drain terminal (5) and a source terminal (6) were formed by a photolithographic method and a lift-off method.

Lastly, an Y2O3 film for use as a gate insulating film (3) was formed by an electron beam deposition method and gold was deposited thereon. A gate terminal (4) was then formed by a photolithographic method and a lift-off method.

(Evaluation of Characteristics of TFT Element)

The current-voltage characteristic of the TFT element formed on the PET film was measured at room temperature. Since the drain current IDS increased with the drain voltage VDS, the channel was found to be of an n-conductivity type. This is consistent with the fact that the amorphous InSnO amorphous oxide film is an n-type conductor. IDS was saturated (pinch-off) at VDS=about 6 V, which was a typical behavior for semiconductor transistors. When Vg=0 V, current of 510−8 A flowed, and when Vg=10 V, current of Ids=5.010−5 A flowed. This is because carriers were induced in the InSnO amorphous oxide thin film, i.e., an insulator, due to the gate bias. The on/off ratio of the transistor was about 103. The field effect mobility was determined from the output characteristics. As a result, a field effect mobility of about 5 cm2(Vs)−1 was obtained in the saturation region.

The TFT element formed on a glass substrate showed similar characteristics. The element formed on the PET film was inflected at a radius of curvature of 30 mm, and the same transistor characteristics were measured. No change in transistor characteristics was observed.

Example 12 Preparation of TFT Element Using InGaO Amorphous Oxide Film by PLD Method

A top gate TFT element shown in FIG. 5 was prepared. In particular, an InGaO amorphous oxide film 120 nm in thickness for use as a channel layer (2) was formed on a polyethylene terephthalate (PET) film (1) by the deposition method of EXAMPLE 7.

An InGaO amorphous oxide film having high electrical conductivity and a gold film each 30 nm in thickness were formed on this InGaO amorphous oxide film by the PLD method at an oxygen partial pressure inside the chamber of less than 1 Pa while applying zero voltage to the oxygen radical generator. A drain terminal (5) and a source terminal (6) were formed by a photolithographic method and a lift-off method.

Lastly, an Y2O3 film for use as a gate insulating film (3) was formed by an electron beam deposition method and gold was deposited thereon. A gate terminal (4) was then formed by a photolithographic method and a lift-off method.

(Evaluation of Characteristics of TFT Element)

The current-voltage characteristic of the TFT element formed on the PET film was measured at room temperature. Since the drain current IDS increased with the drain voltage VDS, the channel was found to be of an n-conductivity type. This is consistent with the fact that the amorphous InGaO amorphous oxide film is an n-type conductor. IDS was saturated (pinch-off) at VDS=about 6 V, which was a typical behavior for semiconductor transistors. When Vg=0 V, current of 110−8 A flowed, and when Vg=10 V, current of Ids=1.010−6 A flowed. This corresponds to the induction of electron carriers inside the insulator, InGaO amorphous oxide film by the gate bias. The on/off ratio of the transistor was about 102. The field effect mobility was determined from the output characteristics. As a result, a field effect mobility of about 0.8 cm2(Vs)−1 was obtained in the saturation region.

The TFT element formed on a glass substrate showed similar characteristics. The element formed on the PET film was inflected at a radius of curvature of 30 mm, and the same transistor characteristics were measured. No change in transistor characteristics was observed.

It should be noted that, as described in EXAMPLES above, the film can be used as a channel layer of a TFT by controlling the electron carrier concentration to less than 1018/cm3. The electron carrier concentration is more preferably 1017/cm3 or less and yet more preferably 1016/cm3 or less.

INDUSTRIAL APPLICABILITY

The amorphous oxide of the present invention can be used in semiconductor devices such as thin film transistors. The thin film transistors can be used as switching elements of LCDs and organic EL displays and are also widely applicable to see-through-type displays, IC cards, ID tags, etc.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a graph that shows the relationship between the oxygen partial pressure during the deposition and the electron carrier concentration of an InGaZnO amorphous oxide deposited by a pulsed laser deposition method.

FIG. 2 is a graph that shows the relationship between the electron carrier concentration and electron mobility of an InGaZnO amorphous oxide film formed by a pulsed laser deposition method.

FIG. 3 is a graph that shows the relationship between the oxygen partial pressure during the deposition and the electrical conductivity of an InGaZnO amorphous oxide deposited by a high-frequency sputtering method.

FIG. 4 is a graph showing changes in electron conductivity, electron carrier concentration, and electron mobility of InGaO3(Zn1-xMgxO)4 deposited by pulsed laser deposition against x.

FIG. 5 is a schematic illustration showing a structure of a top gate TFT element.

FIG. 6 is a graph showing a current-voltage characteristic of a top gate TFT element.

FIG. 7 is a schematic illustration showing a pulsed layer deposition device.

FIG. 8 is a schematic illustration showing a sputter deposition device.

Referenced by
Citing PatentFiling datePublication dateApplicantTitle
US7462862Oct 25, 2005Dec 9, 2008Hewlett-Packard Development Company, L.P.Transistor using an isovalent semiconductor oxide as the active channel layer
US7468304 *Aug 24, 2006Dec 23, 2008Canon Kabushiki KaishaMethod of fabricating oxide semiconductor device
US7547591Mar 7, 2007Jun 16, 2009Hewlett-Packard Development Company, L.P.Semiconductor device
US7601984Nov 9, 2005Oct 13, 2009Canon Kabushiki KaishaField effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator
US7616179Mar 30, 2007Nov 10, 2009Canon Kabushiki KaishaOrganic EL display apparatus and driving method therefor
US7626201Oct 4, 2006Dec 1, 2009Hewlett-Packard Development Company, L.P.Semiconductor device
US7629191Sep 26, 2006Dec 8, 2009Hewlett-Packard Development Company, L.P.Semiconductor device
US7642573Mar 12, 2004Jan 5, 2010Hewlett-Packard Development Company, L.P.Semiconductor device
US7651896Aug 23, 2007Jan 26, 2010Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US7674650Sep 21, 2006Mar 9, 2010Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US7691715Jul 29, 2008Apr 6, 2010Canon Kabushiki KaishaMethod of fabricating oxide semiconductor device
US7696513Mar 2, 2007Apr 13, 2010Canon Kabushiki KaishaLight-emitting device using oxide semiconductor thin-film transistor and image display apparatus using the same
US7732251Oct 11, 2007Jun 8, 2010Hewlett-Packard Development Company, L.P.Method of making a semiconductor device having a multicomponent oxide
US7732819Aug 1, 2008Jun 8, 2010Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US7755105 *May 27, 2008Jul 13, 2010Semiconductor Energy Laboratory Co., Ltd.Capacitor-less memory
US7767106 *Jul 10, 2007Aug 3, 2010Canon Kabushiki Kaishaetching an oxide semiconductor film including In2O3, ZnO, Ga2O3 in a gas atmosphere containing a halogen-based gas (fluorine, HBr, HI, HCl, SiCl4, CF2Cl2, CF4)
US7767505May 22, 2008Aug 3, 2010Samsung Electronics Co., Ltd.Methods of manufacturing an oxide semiconductor thin film transistor
US7791082Sep 21, 2007Sep 7, 2010Canon Kabushiki KaishaSemiconductor apparatus and method of manufacturing the same
US7804088 *Apr 6, 2009Sep 28, 2010Fujifilm CorporationSemiconductor device, manufacturing method of semiconductor device, display device, and manufacturing method of display device
US7816680Jun 19, 2008Oct 19, 2010Samsung Electronics Co., Ltd.Oxide semiconductors and thin film transistors comprising the same
US7821613Dec 21, 2006Oct 26, 2010Semiconductor Energy Laboratory Co., Ltd.Display device and manufacturing method thereof
US7851792 *Nov 1, 2006Dec 14, 2010Canon Kabushiki KaishaField-effect transistor
US7855379May 19, 2008Dec 21, 2010Canon Kabushiki KaishaElectron device using oxide semiconductor and method of manufacturing the same
US7858451Jan 17, 2006Dec 28, 2010Semiconductor Energy Laboratory Co., Ltd.Electronic device, semiconductor device and manufacturing method thereof
US7883934Feb 19, 2010Feb 8, 2011Canon Kabushiki KaishaMethod of fabricating oxide semiconductor device
US7893431 *Apr 17, 2007Feb 22, 2011Samsung Electronics Co., Ltd.ZnO based semiconductor devices and methods of manufacturing the same
US7906780 *Jan 11, 2007Mar 15, 2011Canon Kabushiki KaishaField effect transistor
US7910490Apr 29, 2009Mar 22, 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US7915075Oct 16, 2009Mar 29, 2011Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US7923723 *Feb 23, 2007Apr 12, 2011Canon Kabushiki KaishaThin-film transistor and display device using oxide semiconductor
US7927713Jul 26, 2007Apr 19, 2011Applied Materials, Inc.nitriding or oxynitriding aluminum doped zinc target to form zinc nitride or zincoxynitride, using nitorgen and oxygen containing gases under low and high temperature conditions; annealing to improve film mobility; low electron density
US7935964Jun 18, 2008May 3, 2011Samsung Electronics Co., Ltd.Oxide semiconductors and thin film transistors comprising the same
US7939822Dec 30, 2008May 10, 2011Semiconductor Energy Laboratory Co., Ltd.Active matrix display device
US7948171Feb 10, 2006May 24, 2011Semiconductor Energy Laboratory Co., Ltd.Light emitting device
US7952392Oct 26, 2009May 31, 2011Semiconductor Energy Laboratory Co., Ltd.Logic circuit
US7961006Jan 25, 2010Jun 14, 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and electronic apparatus having the same
US7964876Jan 27, 2010Jun 21, 2011Semiconductor Energy Laboratory Co., Ltd.Display device
US7977168Jan 22, 2010Jul 12, 2011Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US7982216Nov 12, 2008Jul 19, 2011Fujifilm CorporationThin film field effect transistor with amorphous oxide active layer and display using the same
US7988470Sep 17, 2010Aug 2, 2011Applied Materials, Inc.Methods of fabricating metal oxide or metal oxynitride TFTs using wet process for source-drain metal etch
US7989815Oct 1, 2009Aug 2, 2011Semiconductor Energy Laboratory Co., Ltd.Display device
US7994508 *Aug 1, 2008Aug 9, 2011Applied Materials, Inc.Thin film transistors using thin film semiconductor materials
US8003981Aug 3, 2007Aug 23, 2011Canon Kabushiki KaishaField effect transistor using oxide film for channel and method of manufacturing the same
US8012794Jun 29, 2009Sep 6, 2011Applied Materials, Inc.Capping layers for metal oxynitride TFTS
US8017045 *Dec 10, 2008Sep 13, 2011Electronics And Telecommunications Research InstituteComposition for oxide semiconductor thin film and field effect transistor using the composition
US8017513Jul 15, 2008Sep 13, 2011Samsung Mobile Display Co., Ltd.Method of manufacturing semiconductor active layer, method of manufacturing thin film transistor using the same and thin film transistor having semiconductor active layer
US8021916Aug 28, 2009Sep 20, 2011Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8021917Nov 4, 2009Sep 20, 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the semiconductor device
US8030663Aug 5, 2009Oct 4, 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8049225Aug 5, 2009Nov 1, 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8058647Nov 9, 2009Nov 15, 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8067775Oct 20, 2009Nov 29, 2011Semiconductor Energy Laboratory Co., Ltd.Thin film transistor with two gate electrodes
US8088652Nov 18, 2010Jan 3, 2012Canon Kabushiki KaishaElectron device using oxide semiconductor and method of manufacturing the same
US8101949Jun 29, 2009Jan 24, 2012Applied Materials, Inc.Treatment of gate dielectric for making high performance metal oxide and metal oxynitride thin film transistors
US8106400Oct 20, 2009Jan 31, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8110436Sep 25, 2008Feb 7, 2012Canon Kabushiki KaishaMethod for manufacturing field-effect transistor
US8114720Dec 9, 2009Feb 14, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8115201Aug 5, 2009Feb 14, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device with oxide semiconductor formed within
US8115883Aug 23, 2010Feb 14, 2012Semiconductor Energy Laboratory Co., Ltd.Display device and method for manufacturing the same
US8129718Aug 3, 2009Mar 6, 2012Canon Kabushiki KaishaAmorphous oxide semiconductor and thin film transistor using the same
US8129719Aug 28, 2009Mar 6, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the semiconductor device
US8143093Mar 17, 2009Mar 27, 2012Applied Materials, Inc.Process to make metal oxide thin film transistor array with etch stopping layer
US8144389Jan 7, 2011Mar 27, 2012Semiconductor Energy Laboratory Co., Ltd.Electronic paper
US8148245Dec 24, 2008Apr 3, 2012Jx Nippon Mining & Metals CorporationMethod for producing a-IGZO oxide thin film
US8148721Nov 20, 2007Apr 3, 2012Canon Kabushiki KaishaBottom gate type thin film transistor, method of manufacturing the same, and display apparatus
US8154017Apr 15, 2008Apr 10, 2012Canon Kabushiki KaishaAmorphous oxide semiconductor, semiconductor device, and thin film transistor
US8158974Mar 21, 2008Apr 17, 2012Idemitsu Kosan Co., Ltd.Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor
US8158975Oct 8, 2009Apr 17, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8164090Oct 5, 2009Apr 24, 2012Canon Kabushiki KaishaField effect transistor and process for production thereof
US8174021Jan 28, 2010May 8, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method of manufacturing the semiconductor device
US8183099Dec 9, 2009May 22, 2012Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing transistor
US8188471Aug 29, 2008May 29, 2012Canon Kabushiki KaishaField effect transistor
US8188477Nov 17, 2009May 29, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8193031Nov 17, 2010Jun 5, 2012Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8207014Jun 29, 2010Jun 26, 2012Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8207025Apr 1, 2011Jun 26, 2012Semiconductor Energy Laboratory Co., Ltd.Manufacturing method of semiconductor device
US8207533Dec 4, 2008Jun 26, 2012Semiconductor Energy Laboratory Co., Ltd.Electronic device, semiconductor device and manufacturing method thereof
US8207756Oct 26, 2010Jun 26, 2012Semiconductor Energy Laboratory Co., Ltd.Logic circuit and semiconductor device
US8212248Dec 25, 2008Jul 3, 2012Canon Kabushiki KaishaAmorphous oxide and field effect transistor
US8212252Sep 15, 2010Jul 3, 2012Canon Kabushiki KaishaLight-emitting device
US8216878Jun 29, 2010Jul 10, 2012Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8218099Aug 30, 2010Jul 10, 2012Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display device and method for manufacturing the same
US8232552Mar 26, 2008Jul 31, 2012Idemitsu Kosan Co., Ltd.Noncrystalline oxide semiconductor thin film, process for producing the noncrystalline oxide semiconductor thin film, process for producing thin-film transistor, field-effect-transistor, light emitting device, display device, and sputtering target
US8236627Aug 30, 2010Aug 7, 2012Semiconductor Energy Laboratory Co., Ltd.Manufacturing method of semiconductor device
US8236635Oct 20, 2009Aug 7, 2012Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8237167Jan 25, 2012Aug 7, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8238152Feb 24, 2010Aug 7, 2012Semiconductor Energy Laboratory Co. Ltd.Memory device and manufacturing method the same
US8241949Jul 13, 2010Aug 14, 2012Semiconductor Energy Laboratory Co., Ltd.Method of manufacturing semiconductor device
US8242494Oct 20, 2009Aug 14, 2012Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing thin film transistor using multi-tone mask
US8242496Jul 13, 2010Aug 14, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8242504May 28, 2009Aug 14, 2012Samsung Electronics Co., Ltd.Oxide semiconductor and thin film transistor including the same
US8242837Oct 19, 2010Aug 14, 2012Semiconductor Energy Laboratory Co., Ltd.Analog circuit and semiconductor device
US8247276Feb 3, 2010Aug 21, 2012Semiconductor Energy Laboratory Co., Ltd.Thin film transistor, method for manufacturing the same, and semiconductor device
US8247812Feb 4, 2010Aug 21, 2012Semiconductor Energy Laboratory Co., Ltd.Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
US8247813Dec 1, 2010Aug 21, 2012Semiconductor Energy Laboratory Co., Ltd.Display device and electronic device including the same
US8247814May 9, 2011Aug 21, 2012Semiconductor Energy Laboratory Co., Ltd.Active matrix display device including a metal oxide semiconductor film
US8253135Mar 18, 2010Aug 28, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device, display device, and electronic appliance
US8258511Mar 25, 2009Sep 4, 2012Applied Materials, Inc.Thin film transistors using multiple active channel layers
US8258862Feb 14, 2011Sep 4, 2012Semiconductor Energy Laboratory Co., Ltd.Demodulation circuit and RFID tag including the demodulation circuit
US8259463Apr 22, 2010Sep 4, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and display device
US8268194Feb 15, 2008Sep 18, 2012Samsung Electronics Co., Ltd.Vacuum deposition while applying direct current power , injecting oxygen into enclosure ; sputtering
US8268642Sep 29, 2010Sep 18, 2012Semiconductor Energy Laboratory Co., Ltd.Method for removing electricity and method for manufacturing semiconductor device
US8269218Dec 3, 2010Sep 18, 2012Semiconductor Energy Laboratory Co., Ltd.Display device
US8274077 *Aug 1, 2008Sep 25, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8274079Jan 26, 2011Sep 25, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device comprising oxide semiconductor and method for manufacturing the same
US8278162Apr 27, 2010Oct 2, 2012Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8278657Feb 4, 2010Oct 2, 2012Semiconductor Energy Laboratory Co., Ltd.Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
US8283662Nov 15, 2010Oct 9, 2012Semiconductor Energy Laboratory Co., Ltd.Memory device
US8289753Nov 2, 2010Oct 16, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8293594Jul 14, 2010Oct 23, 2012Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing a display device having oxide semiconductor layer
US8293595Jul 29, 2009Oct 23, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8293661Dec 2, 2010Oct 23, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8294147Jul 8, 2010Oct 23, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method the same
US8294148Jul 26, 2011Oct 23, 2012Applied Materials, Inc.Thin film transistors using thin film semiconductor materials
US8298858Nov 9, 2011Oct 30, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8298879Jul 14, 2011Oct 30, 2012Applied Materials, Inc.Methods of fabricating metal oxide or metal oxynitride TFTS using wet process for source-drain metal etch
US8304300Jul 1, 2010Nov 6, 2012Semiconductor Energy Laboratory Co., Ltd.Method of manufacturing display device including transistor
US8304765Sep 10, 2009Nov 6, 2012Semiconductor Energy Laboratory Co., Ltd.Display device
US8305109Sep 13, 2010Nov 6, 2012Semiconductor Energy Laboratory Co., Ltd.Logic circuit, light emitting device, semiconductor device, and electronic device
US8309961Oct 4, 2010Nov 13, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device, display device, and electronic appliance
US8313980Mar 12, 2012Nov 20, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8314420Mar 12, 2004Nov 20, 2012Hewlett-Packard Development Company, L.P.Semiconductor device with multiple component oxide channel
US8314425 *Jan 20, 2009Nov 20, 2012Canon Kabushiki KaishaField-effect transistor using amorphouse oxide
US8314637Dec 13, 2010Nov 20, 2012Semiconductor Energy Laboratory Co., Ltd.Non-volatile latch circuit and logic circuit, and semiconductor device using the same
US8318551Nov 30, 2009Nov 27, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8319214Nov 12, 2008Nov 27, 2012Fujifilm CorporationThin film field effect transistor with amorphous oxide active layer and display using the same
US8319215Sep 30, 2009Nov 27, 2012Semiconductor Energy Laboratory Co., Ltd.Display device
US8319216Nov 5, 2009Nov 27, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the semiconductor device
US8319218Oct 4, 2010Nov 27, 2012Semiconductor Energy Laboratory Co., Ltd.Oxide semiconductor layer and semiconductor device
US8319267Nov 10, 2010Nov 27, 2012Semiconductor Energy Laboratory Co., Ltd.Device including nonvolatile memory element
US8319300Apr 9, 2010Nov 27, 2012Samsung Electronics Co., Ltd.Solution composition for forming oxide thin film and electronic device including the oxide thin film
US8320162Feb 7, 2011Nov 27, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and driving method of the same
US8320516Feb 22, 2011Nov 27, 2012Semiconductor Energy Laboratory Co., Ltd.Pulse signal output circuit and shift register
US8324018Dec 18, 2009Dec 4, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device, electronic device, and method of manufacturing semiconductor device
US8324027Jul 8, 2010Dec 4, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8324621Oct 7, 2010Dec 4, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device having oxide semiconductor layer
US8324626Aug 5, 2010Dec 4, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8329506Nov 16, 2009Dec 11, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8330156Dec 22, 2009Dec 11, 2012Semiconductor Energy Laboratory Co., Ltd.Thin film transistor with a plurality of oxide clusters over the gate insulating layer
US8330157Oct 25, 2010Dec 11, 2012Semiconductor Energy Laboratory Co., Ltd.Manufacturing method of semiconductor device and semiconductor device
US8334719Nov 10, 2010Dec 18, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device having function of thyristor
US8338226Mar 29, 2010Dec 25, 2012Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8338827Nov 4, 2009Dec 25, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8339828Nov 17, 2010Dec 25, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8339836Jan 10, 2011Dec 25, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8343799Oct 20, 2009Jan 1, 2013Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8343817Aug 5, 2009Jan 1, 2013Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8344372Sep 30, 2009Jan 1, 2013Semiconductor Energy Laboratory Co., Ltd.Display device and method for manufacturing the same
US8344374Oct 5, 2010Jan 1, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device comprising oxide semiconductor layer
US8344387Nov 24, 2009Jan 1, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8344788Jan 20, 2011Jan 1, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8350261Feb 4, 2010Jan 8, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device including a transistor, and manufacturing method of the semiconductor device
US8350621Aug 7, 2012Jan 8, 2013Semiconductor Energy Laboratory Co., Ltd.Analog circuit and semiconductor device
US8357963Jul 19, 2011Jan 22, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8362538Dec 22, 2010Jan 29, 2013Semiconductor Energy Laboratory Co., Ltd.Memory device, semiconductor device, and electronic device
US8362563Jul 26, 2012Jan 29, 2013Semiconductor Energy Laboratory Co., Ltd.Thin film transistor, method for manufacturing the same, and semiconductor device
US8363452Nov 2, 2010Jan 29, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8367489Nov 22, 2010Feb 5, 2013Semiconductor Energy Laboratory Co., Ltd.Method of fabricating a stacked oxide material for thin film transistor
US8369478Feb 24, 2011Feb 5, 2013Semiconductor Energy Laboratory Co., Ltd.Pulse signal output circuit and shift register
US8372664Dec 21, 2010Feb 12, 2013Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing display device
US8373164Nov 6, 2009Feb 12, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8373203Nov 24, 2010Feb 12, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8373443May 26, 2011Feb 12, 2013Semiconductor Energy Laboratory Co., Ltd.Logic circuit
US8377744Dec 1, 2010Feb 19, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8377762Sep 13, 2010Feb 19, 2013Semiconductor Energy Laboratory Co., Ltd.Light-emitting device and manufacturing method thereof
US8378342Mar 23, 2010Feb 19, 2013Samsung Electronics Co., Ltd.Oxide semiconductor and thin film transistor including the same
US8378343Jul 13, 2010Feb 19, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8378344Aug 26, 2010Feb 19, 2013Semiconductor Energy Laboratory Co., Ltd.Light-emitting device with plural kinds of thin film transistors and circuits over one substrate
US8378351Apr 1, 2011Feb 19, 2013Sony CorporationThin film transistor, display device, and electronic unit
US8378391Nov 3, 2010Feb 19, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device including image sensor
US8378393Oct 30, 2009Feb 19, 2013Semiconductor Energy Laboratory Co., Ltd.Conductive oxynitride and method for manufacturing conductive oxynitride film
US8378403Jun 27, 2011Feb 19, 2013Semiconductor Energy LaboratorySemiconductor device
US8383470Dec 9, 2009Feb 26, 2013Semiconductor Energy Laboratory Co., Ltd.Thin film transistor (TFT) having a protective layer and manufacturing method thereof
US8384076May 14, 2009Feb 26, 2013Samsung Electronics Co., Ltd.Transistors, semiconductor devices and methods of manufacturing the same
US8384079Jul 29, 2010Feb 26, 2013Semiconductor Energy Laboratory Co., Ltd.Oxide semiconductor device
US8384085Aug 5, 2010Feb 26, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8385105Feb 2, 2011Feb 26, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8389326Jun 13, 2012Mar 5, 2013Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8389417Nov 12, 2010Mar 5, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8389988Oct 1, 2009Mar 5, 2013Semiconductor Energy Laboratory Co., Ltd.Display device
US8389989Aug 26, 2010Mar 5, 2013Semiconductor Energy Laboratory Co., Ltd.Transistor having oxide semiconductor layer and display utilizing the same
US8389991Nov 22, 2010Mar 5, 2013Sony CorporationThin film transistor, display device, and electronic device
US8390044Nov 24, 2010Mar 5, 2013Semiconductor Energy Laboratory Co., Ltd.Non-linear element, display device including non-linear element, and electronic device including display device
US8394671Jun 13, 2012Mar 12, 2013Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8395148Nov 4, 2009Mar 12, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8395153Aug 28, 2012Mar 12, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method the same
US8395716Nov 30, 2009Mar 12, 2013Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display device
US8395931Jan 19, 2011Mar 12, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device and driving method thereof
US8395938Jan 10, 2011Mar 12, 2013Semiconductor Energy Laboratory Co., Ltd.Non-volatile semiconductor memory device equipped with an oxide semiconductor writing transistor having a small off-state current
US8400817Dec 27, 2010Mar 19, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8405092Sep 9, 2011Mar 26, 2013Semiconductor Energy Laboratory Co., Ltd.Display device
US8406038Apr 27, 2011Mar 26, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8410002Nov 12, 2010Apr 2, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8410838Nov 15, 2010Apr 2, 2013Semiconductor Energy Laboratory Co., Ltd.Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
US8411480Apr 8, 2011Apr 2, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8415198Jul 26, 2007Apr 9, 2013Canon Kabushiki KaishaProduction method of thin film transistor using amorphous oxide semiconductor film
US8415665Dec 6, 2010Apr 9, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and electronic device
US8415667Dec 1, 2010Apr 9, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8415731Dec 27, 2010Apr 9, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor storage device with integrated capacitor and having transistor overlapping sections
US8416622May 16, 2011Apr 9, 2013Semiconductor Energy Laboratory Co., Ltd.Driving method of a semiconductor device with an inverted period having a negative potential applied to a gate of an oxide semiconductor transistor
US8420441Jul 29, 2010Apr 16, 2013Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing oxide semiconductor device
US8420553Dec 2, 2010Apr 16, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8421067Jul 29, 2010Apr 16, 2013Semiconductor Energy Laboratory Co., Ltd.Oxide semiconductor device
US8421068Oct 14, 2010Apr 16, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8421069Oct 14, 2010Apr 16, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8421070Jan 14, 2011Apr 16, 2013Samsung Electronics Co., Ltd.ZnO based semiconductor devices and methods of manufacturing the same
US8421071Jan 9, 2012Apr 16, 2013Semiconductor Energy Laboratory Co., Ltd.Memory device
US8421081Dec 20, 2011Apr 16, 2013Semiconductor Energy Laboratory Co., Ltd.Memory device, memory module and electronic device
US8421083Jul 29, 2010Apr 16, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device with two oxide semiconductor layers and manufacturing method thereof
US8422272Aug 1, 2011Apr 16, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and driving method thereof
US8422298Mar 10, 2011Apr 16, 2013Semiconductor Energy Laboratory Co., Ltd.Memory device and semiconductor device
US8426243Jan 18, 2012Apr 23, 2013Canon Kabushiki KaishaAmorphous oxide semiconductor and thin film transistor using the same
US8426853Dec 3, 2010Apr 23, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8426868Oct 23, 2009Apr 23, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8427417Sep 8, 2010Apr 23, 2013Semiconductor Energy Laboratory Co., Ltd.Driver circuit, display device including the driver circuit, and electronic device including the display device
US8427595Sep 10, 2009Apr 23, 2013Semiconductor Energy Laboratory Co., Ltd.Display device with pixel portion and common connection portion having oxide semiconductor layers
US8431449Apr 1, 2011Apr 30, 2013Semiconductor Energy Laboratory Co., Ltd.Manufacturing method of semiconductor device
US8432187Dec 7, 2010Apr 30, 2013Semiconductor Energy Laboratory Co., Ltd.Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
US8432502Dec 1, 2010Apr 30, 2013Semiconductor Energy Laboratory Co., Ltd.Display device and electronic device including the same
US8432718Dec 3, 2010Apr 30, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device
US8432730Jul 19, 2011Apr 30, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for driving the same
US8436349Feb 18, 2008May 7, 2013Canon Kabushiki KaishaThin-film transistor fabrication process and display device
US8436350Jan 25, 2010May 7, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device using an oxide semiconductor with a plurality of metal clusters
US8436403Jan 26, 2011May 7, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device including transistor provided with sidewall and electronic appliance
US8436431Jan 26, 2011May 7, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device including gate and three conductor electrodes
US8437165Feb 25, 2011May 7, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device and semiconductor device
US8440502Sep 9, 2011May 14, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the semiconductor device
US8440510May 10, 2011May 14, 2013Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8441007Dec 9, 2009May 14, 2013Semiconductor Energy Laboratory Co., Ltd.Display device and manufacturing method thereof
US8441009Dec 21, 2010May 14, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8441010Jun 21, 2011May 14, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8441011Oct 23, 2012May 14, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8441047Apr 5, 2010May 14, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8441425Nov 24, 2009May 14, 2013Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display device
US8441841Feb 15, 2011May 14, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and driving method of semiconductor device
US8441868Apr 1, 2011May 14, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory having a read circuit
US8442183Feb 28, 2011May 14, 2013Semiconductor Energy Laboratory Co., Ltd.Pulse signal output circuit and shift register
US8445902Apr 28, 2009May 21, 2013Canon Kabushiki KaishaThin film transistor and method of manufacturing the same
US8445905Aug 6, 2012May 21, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8446171Apr 23, 2012May 21, 2013Semiconductor Energy Laboratory Co., Ltd.Signal processing unit
US8450123Aug 19, 2011May 28, 2013Semiconductor Energy Laboratory Co., Ltd.Oxygen diffusion evaluation method of oxide film stacked body
US8450144Mar 12, 2010May 28, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8450732 *Jun 19, 2008May 28, 2013Samsung Electronics Co., Ltd.Oxide semiconductors and thin film transistors comprising the same
US8450735Aug 25, 2010May 28, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device including a transistor, and manufacturing method of semiconductor device
US8450783Dec 27, 2010May 28, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8451651Feb 15, 2011May 28, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8455868Dec 22, 2010Jun 4, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8456396Dec 23, 2010Jun 4, 2013Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display device
US8461007Apr 21, 2011Jun 11, 2013Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8461582Feb 24, 2010Jun 11, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8461584Mar 25, 2011Jun 11, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device with metal oxide film
US8461586Jul 1, 2011Jun 11, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8461630Nov 18, 2011Jun 11, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8462100Nov 30, 2011Jun 11, 2013Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display device
US8466014Jul 26, 2012Jun 18, 2013Semiconductor Energy Laboratory Co., Ltd.Manufacturing method of semiconductor device
US8466462 *Feb 11, 2009Jun 18, 2013Samsung Display Co., Ltd.Thin film transistor and method of fabricating the same
US8466740Oct 27, 2011Jun 18, 2013Semiconductor Energy Laboratory Co., Ltd.Receiving circuit, LSI chip, and storage medium
US8467231Jul 29, 2011Jun 18, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and driving method thereof
US8467232Jul 29, 2011Jun 18, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8467825Nov 16, 2010Jun 18, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8470649Dec 1, 2010Jun 25, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8470650Oct 18, 2010Jun 25, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method for the same
US8471252Aug 5, 2009Jun 25, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8471596Jun 6, 2011Jun 25, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and electronic apparatus having the same
US8472231Mar 31, 2011Jun 25, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device
US8472235Mar 15, 2011Jun 25, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8476625Dec 2, 2009Jul 2, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device comprising gate electrode of one conductive layer and gate wiring of two conductive layers
US8476626Nov 18, 2010Jul 2, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device including semiconductor and oxide semiconductor transistors
US8476719May 18, 2011Jul 2, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method of manufacturing the same
US8476927Apr 23, 2012Jul 2, 2013Semiconductor Energy Laboratory Co., Ltd.Programmable logic device
US8477158Feb 15, 2011Jul 2, 2013Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display device and electronic device
US8481363Sep 8, 2011Jul 9, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8481377Feb 14, 2011Jul 9, 2013Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing a semiconductor device with impurity doped oxide semiconductor
US8482001Dec 22, 2010Jul 9, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8482004Oct 4, 2010Jul 9, 2013Semiconductor Energy Laboratory Co., Ltd.Light-emitting display device and electronic device including the same
US8482005Dec 1, 2010Jul 9, 2013Semiconductor Energy Laboratory Co., Ltd.Display device comprising an oxide semiconductor layer
US8482690Oct 4, 2010Jul 9, 2013Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display device and electronic device including the same
US8482974Feb 7, 2011Jul 9, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device and method for driving the same
US8487303Mar 14, 2011Jul 16, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device
US8487844Aug 18, 2011Jul 16, 2013Semiconductor Energy Laboratory Co., Ltd.EL display device and electronic device including the same
US8488077Feb 1, 2012Jul 16, 2013Semiconductor Energy Laboratory Co., Ltd.Display device and method for manufacturing the same
US8488394Aug 4, 2011Jul 16, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8492756Jan 7, 2010Jul 23, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8492757Mar 4, 2010Jul 23, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8492758Sep 22, 2010Jul 23, 2013Semiconductor Energy Laboratory Co., Ltd.Oxide semiconductor film and semiconductor device
US8492759Dec 6, 2010Jul 23, 2013Semiconductor Energy Laboratory Co., Ltd.Field effect transistor
US8492760Feb 8, 2012Jul 23, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8492764Aug 2, 2010Jul 23, 2013Semicondcutor Energy Laboratory Co., Ltd.Light-emitting device and manufacturing method thereof
US8492806Oct 26, 2010Jul 23, 2013Semiconductor Energy Laboratory Co., Ltd.Non-linear element, display device including non-linear element, and electronic device including display device
US8492840Jan 18, 2011Jul 23, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device having an oxide semiconductor layer
US8492853Jan 26, 2011Jul 23, 2013Semiconductor Energy Laboratory Co., Ltd.Field effect transistor having conductor electrode in contact with semiconductor layer
US8492862Nov 12, 2010Jul 23, 2013Semiconductor Energy Laboratory Co., Ltd.Sputtering target and manufacturing method thereof, and transistor
US8493766Feb 2, 2011Jul 23, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method of driving semiconductor device
US8501555Sep 10, 2009Aug 6, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8501564Nov 30, 2010Aug 6, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor element, semiconductor device, and method for manufacturing the same
US8502216Nov 5, 2009Aug 6, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8502220Aug 2, 2010Aug 6, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8502221Mar 29, 2011Aug 6, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device with two metal oxide films and an oxide semiconductor film
US8502222Feb 23, 2012Aug 6, 2013Canon Kabushiki KaishaAmorphous oxide semiconductor, semiconductor device, thin film transistor and display device
US8502226Feb 17, 2011Aug 6, 2013Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display device
US8502292Jul 14, 2011Aug 6, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device with memory cells
US8502772Jun 30, 2011Aug 6, 2013Semiconductor Energy Laboratory Co., Ltd.Driving method of input/output device
US8507907Jan 27, 2011Aug 13, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device
US8508256May 15, 2012Aug 13, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor integrated circuit
US8508276Aug 19, 2011Aug 13, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device including latch circuit
US8508967Sep 1, 2011Aug 13, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and driving method of semiconductor device
US8513053Feb 4, 2013Aug 20, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method the same
US8513054Feb 14, 2013Aug 20, 2013Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8513661Jan 20, 2009Aug 20, 2013Canon Kabushiki KaishaThin film transistor having specified transmittance to light
US8513662May 11, 2009Aug 20, 2013Canon Kabushiki KaishaSemiconductor device and display apparatus
US8513773Jan 9, 2012Aug 20, 2013Semiconductor Energy Laboratory Co., Ltd.Capacitor and semiconductor device including dielectric and N-type semiconductor
US8514609Feb 2, 2011Aug 20, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method of driving semiconductor device
US8518739Nov 10, 2009Aug 27, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8518740Jul 1, 2010Aug 27, 2013Semiconductor Energy Laboratory Co., Ltd.Manufacturing method of semiconductor device
US8518755Feb 17, 2011Aug 27, 2013Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8518761Apr 13, 2011Aug 27, 2013Semiconductor Energy Laboratory Co., Ltd.Deposition method and method for manufacturing semiconductor device
US8519387Jul 19, 2011Aug 27, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing
US8519990Mar 24, 2011Aug 27, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor display device
US8520426Sep 1, 2011Aug 27, 2013Semiconductor Energy Laboratory Co., Ltd.Method for driving semiconductor device
US8525304May 18, 2011Sep 3, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8525551May 16, 2012Sep 3, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8525585Jul 26, 2012Sep 3, 2013Semiconductor Energy Laboratory Co., Ltd.Demodulation circuit and RFID tag including the demodulation circuit
US8526216Jul 11, 2012Sep 3, 2013Semiconductor Energy Laboratory Co., Ltd.Memory device and manufacturing method the same
US8526567Oct 4, 2010Sep 3, 2013Semiconductor Energy Laboratory Co., Ltd.Shift register and display device and driving method thereof
US8529802Feb 12, 2010Sep 10, 2013Samsung Electronics Co., Ltd.Solution composition and method of forming thin film and method of manufacturing thin film transistor using the solution composition
US8530246May 11, 2009Sep 10, 2013Canon Kabushiki KaishaMethod for controlling threshold voltage of semiconductor element
US8530285Dec 22, 2010Sep 10, 2013Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8530289Apr 21, 2011Sep 10, 2013Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8530892Nov 2, 2010Sep 10, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8530944Mar 1, 2011Sep 10, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8531618Nov 29, 2010Sep 10, 2013Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display device, method for driving the same, and electronic device including the same
US8531870Jul 28, 2011Sep 10, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and driving method of semiconductor device
US8536571Jan 9, 2012Sep 17, 2013Semiconductor Energy Laboratory Co., Ltd.Manufacturing method of semiconductor device
US8537600Jul 27, 2011Sep 17, 2013Semiconductor Energy Laboratory Co., Ltd.Low off-state leakage current semiconductor memory device
US8541266Mar 26, 2012Sep 24, 2013Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8541780Aug 31, 2010Sep 24, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device having oxide semiconductor layer
US8541781Mar 2, 2012Sep 24, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8541782Nov 5, 2010Sep 24, 2013Semiconductor Energy Laboratory Co., Ltd.Method for evaluating oxide semiconductor and method for manufacturing semiconductor device
US8541846Feb 14, 2011Sep 24, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8542004Nov 21, 2012Sep 24, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and driving method of the same
US8542034May 16, 2012Sep 24, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8542528Aug 3, 2011Sep 24, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for driving semiconductor device
US8546161Sep 7, 2011Oct 1, 2013Semiconductor Energy Laboratory Co., Ltd.Manufacturing method of thin film transistor and liquid crystal display device
US8546180Jul 29, 2010Oct 1, 2013Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing oxide semiconductor device
US8546181Sep 25, 2012Oct 1, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8546182Nov 19, 2012Oct 1, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8546225Apr 21, 2011Oct 1, 2013Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8546811Feb 1, 2011Oct 1, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8546892Oct 17, 2011Oct 1, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing semiconductor device
US8547493Oct 6, 2010Oct 1, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device with indium or zinc layer in contact with oxide semiconductor layer and method for manufacturing the semiconductor device
US8547753Jan 13, 2011Oct 1, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8547771Aug 2, 2011Oct 1, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor integrated circuit
US8551810Mar 25, 2011Oct 8, 2013Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8551824Feb 17, 2011Oct 8, 2013Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8552423Jul 14, 2010Oct 8, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing semiconductor device
US8552425Jun 10, 2011Oct 8, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8552434Nov 19, 2012Oct 8, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8552712Apr 13, 2011Oct 8, 2013Semiconductor Energy Laboratory Co., Ltd.Current measurement method, inspection method of semiconductor device, semiconductor device, and test element group
US8553447Sep 20, 2011Oct 8, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device and driving method thereof
US8557641Jun 29, 2010Oct 15, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8558233Sep 14, 2012Oct 15, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8558960Sep 7, 2011Oct 15, 2013Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display device and method for manufacturing the same
US8559220Nov 23, 2010Oct 15, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8563973Mar 7, 2011Oct 22, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8563976Dec 6, 2010Oct 22, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8563977Sep 18, 2008Oct 22, 2013Canon Kabushiki KaishaThin film transistor having a two-layer semiconductor with columnar structures, manufacturing method therefor, and display apparatus using the same
US8564331May 2, 2012Oct 22, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8569753May 27, 2011Oct 29, 2013Semiconductor Energy Laboratory Co., Ltd.Storage device comprising semiconductor elements
US8569754Oct 31, 2011Oct 29, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8570065Apr 3, 2012Oct 29, 2013Semiconductor Energy Laboratory Co., Ltd.Programmable LSI
US8570456Dec 27, 2010Oct 29, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device, display device and electronic device equipped with the semiconductor device
US8575610Aug 19, 2011Nov 5, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for driving the same
US8575618Jun 25, 2012Nov 5, 2013Semiconductor Energy Laboratory Co., Ltd.Electronic device, semiconductor device and manufacturing method thereof
US8575678Jan 4, 2012Nov 5, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device with floating gate
US8575960May 15, 2012Nov 5, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8576620Nov 12, 2010Nov 5, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and driving method thereof
US8576636Jul 1, 2011Nov 5, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8576978Oct 25, 2012Nov 5, 2013Semiconductor Energy Laboratory Co., Ltd.Pulse signal output circuit and shift register
US8581625May 3, 2012Nov 12, 2013Semiconductor Energy Laboratory Co., Ltd.Programmable logic device
US8581818Mar 28, 2011Nov 12, 2013Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display device and method for driving the same
US8582348Aug 1, 2011Nov 12, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for driving semiconductor device
US8582349Aug 24, 2011Nov 12, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8586905Feb 4, 2011Nov 19, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and driving method thereof
US8587342May 15, 2012Nov 19, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor integrated circuit
US8587999Nov 9, 2012Nov 19, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8588000May 16, 2011Nov 19, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device having a reading transistor with a back-gate electrode
US8592251May 9, 2012Nov 26, 2013Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8592261Aug 25, 2011Nov 26, 2013Semiconductor Energy Laboratory Co., Ltd.Method for designing semiconductor device
US8592814Sep 22, 2010Nov 26, 2013Semiconductor Energy Laboratory Co., Ltd.Device with oxide semiconductor thin film transistor
US8592815Jun 30, 2009Nov 26, 2013Canon Kabushiki KaishaLight emitting display apparatus
US8592879Aug 30, 2011Nov 26, 2013Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8593856Jan 18, 2011Nov 26, 2013Semiconductor Energy Laboratory Co., Ltd.Signal processing circuit and method for driving the same
US8593857Feb 10, 2011Nov 26, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device, driving method thereof, and method for manufacturing semiconductor device
US8593858Aug 26, 2011Nov 26, 2013Semiconductor Energy Laboratory Co., Ltd.Driving method of semiconductor device
US8597992Feb 14, 2011Dec 3, 2013Semiconductor Energy Laboratory Co., Ltd.Transistor and manufacturing method of the same
US8598578 *Nov 18, 2010Dec 3, 2013Idemitsu Kosan Co., Ltd.Sputtering target and thin film transistor equipped with same
US8598591May 27, 2011Dec 3, 2013Semiconductor Energy Laboratory Co., Ltd.Display device including clock wiring and oxide semiconductor transistor
US8598635Oct 26, 2010Dec 3, 2013Semiconductor Energy Laboratory Co., Ltd.Transistor
US8598648Mar 10, 2011Dec 3, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and driving method of semiconductor device
US8599111Mar 8, 2007Dec 3, 2013Canon Kabushiki KaishaDriving circuit of display element and image display apparatus
US8599177Dec 15, 2010Dec 3, 2013Semiconductor Energy Laboratory Co., Ltd.Method for driving liquid crystal display device
US8599604Oct 19, 2011Dec 3, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device and driving method thereof
US8599998Feb 11, 2011Dec 3, 2013Semiconductor Energy Laboratory Co., Ltd.Display device, semiconductor device, and driving method thereof
US8603841Aug 24, 2011Dec 10, 2013Semiconductor Energy Laboratory Co., Ltd.Manufacturing methods of semiconductor device and light-emitting display device
US8604472Nov 1, 2012Dec 10, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8604473Apr 18, 2013Dec 10, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8604476Oct 11, 2011Dec 10, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device including memory cell
US8605059Jun 22, 2011Dec 10, 2013Semiconductor Energy Laboratory Co., Ltd.Input/output device and driving method thereof
US8605073Feb 14, 2011Dec 10, 2013Semiconductor Energy Laboratory Co., Ltd.Pulse signal output circuit and shift register
US8605477Apr 25, 2011Dec 10, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device
US8609478Jun 29, 2010Dec 17, 2013Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8610120Sep 7, 2011Dec 17, 2013Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display device and manufacturing method thereof
US8610180Jun 7, 2011Dec 17, 2013Semiconductor Energy Laboratory Co., Ltd.Gas sensor and method for manufacturing the gas sensor
US8610187Dec 13, 2010Dec 17, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8610482May 22, 2012Dec 17, 2013Semiconductor Energy Laboratory Co., Ltd.Trimming circuit and method for driving trimming circuit
US8610696Feb 4, 2011Dec 17, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and display device including the same
US8614007Feb 12, 2013Dec 24, 2013Applied Materials, Inc.Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
US8614910Jul 20, 2011Dec 24, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for driving the same
US8614916Aug 2, 2011Dec 24, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and driving method thereof
US8617920Feb 8, 2011Dec 31, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8618543Oct 30, 2007Dec 31, 2013Samsung Electronics Co., Ltd.Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor
US8618586Jan 18, 2013Dec 31, 2013Semiconductor Energy Laboratory Co., Ltd.Memory device, semiconductor device, and electronic device
US8619104Feb 4, 2011Dec 31, 2013Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display device and electronic device
US8619454Nov 19, 2012Dec 31, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8619470Jun 16, 2011Dec 31, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device with long data holding period
US8623698Mar 4, 2013Jan 7, 2014Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8624237Jul 29, 2009Jan 7, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8624239May 11, 2011Jan 7, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8624245Dec 1, 2010Jan 7, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8624650Dec 20, 2010Jan 7, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8625085Feb 29, 2012Jan 7, 2014Semiconductor Energy Laboratory Co., Ltd.Defect evaluation method for semiconductor
US8628987Aug 24, 2011Jan 14, 2014Semiconductor Energy Laboratory Co., Ltd.Manufacturing methods of thin film transistor, liquid crystal display device, and semiconductor device
US8629000Jan 8, 2013Jan 14, 2014Semiconductor Energy Laboratory Co., Ltd.Thin film transistor, method for manufacturing the same, and semiconductor device
US8629069 *Aug 1, 2008Jan 14, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8629432Jan 7, 2010Jan 14, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8629434May 2, 2013Jan 14, 2014Semiconductor Energy Laboratory Co., Ltd.Display device and manufacturing method thereof
US8629438May 18, 2011Jan 14, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8629441Aug 2, 2010Jan 14, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing semiconductor device
US8629496Nov 16, 2011Jan 14, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8629817Jan 14, 2013Jan 14, 2014Canon Kabushiki KaishaDriving circuit of display element and image display apparatus
US8630110Apr 30, 2012Jan 14, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device
US8630127Jun 22, 2011Jan 14, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for driving the same
US8630130Mar 26, 2012Jan 14, 2014Semiconductor Energy Laboratory Co., Ltd.Memory circuit, memory unit, and signal processing circuit
US8633480Nov 3, 2010Jan 21, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device having an oxide semiconductor with a crystalline region and manufacturing method thereof
US8633492Nov 29, 2012Jan 21, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8634044Mar 24, 2010Jan 21, 2014Semiconductor Energy Laboratory Co., Ltd.Display device and manufacturing method thereof
US8634228Aug 29, 2011Jan 21, 2014Semiconductor Energy Laboratory Co., Ltd.Driving method of semiconductor device
US8634230Jan 12, 2012Jan 21, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for driving the same
US8637347Jul 1, 2010Jan 28, 2014Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8637348Jul 24, 2013Jan 28, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8637354Jun 14, 2011Jan 28, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8637802Jun 7, 2011Jan 28, 2014Semiconductor Energy Laboratory Co., Ltd.Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
US8637861Nov 18, 2010Jan 28, 2014Semiconductor Energy Laboratory Co., Ltd.Transistor having oxide semiconductor with electrode facing its side surface
US8637863Aug 27, 2012Jan 28, 2014Semiconductor Energy Laboratory Co., Ltd.Display device
US8637864Oct 1, 2012Jan 28, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method of manufacturing the same
US8637865Feb 15, 2013Jan 28, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8638123May 16, 2012Jan 28, 2014Semiconductor Energy Laboratory Co., Ltd.Adder including transistor having oxide semiconductor layer
US8638322Jan 26, 2011Jan 28, 2014Semiconductor Energy Laboratory Co., Ltd.Display device
US8642380Jun 22, 2011Feb 4, 2014Semiconductor Energy Laboratory Co., Ltd.Manufacturing method of semiconductor device
US8642412Oct 18, 2010Feb 4, 2014Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing an oxide-based semiconductor thin film transistor (TFT) including out diffusing hydrogen or moisture from the oxide semiconductor layer into an adjacent insulating layer which contains a halogen element
US8643004Oct 26, 2010Feb 4, 2014Semiconductor Energy Laboratory Co., Ltd.Power diode including oxide semiconductor
US8643007Feb 16, 2012Feb 4, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8643008 *Jul 12, 2012Feb 4, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8643009Sep 4, 2012Feb 4, 2014Semiconductor Energy Laboratory Co., Ltd.Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
US8643011Nov 15, 2012Feb 4, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8643586May 29, 2013Feb 4, 2014Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display device
US8644048Sep 12, 2011Feb 4, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8647031Apr 25, 2012Feb 11, 2014Hewlett-Packard Development Company, L.P.Method of making a semiconductor device having a multicomponent oxide
US8647919Sep 7, 2011Feb 11, 2014Semiconductor Energy Laboratory Co., Ltd.Light-emitting display device and method for manufacturing the same
US8648343Jul 20, 2010Feb 11, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8649208May 17, 2012Feb 11, 2014Semiconductor Energy Laboratory Co., Ltd.Method for driving semiconductor device
US8653513Feb 17, 2011Feb 18, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device with sidewall insulating layer
US8653514Apr 5, 2011Feb 18, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8653520Feb 4, 2011Feb 18, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8654231Mar 1, 2011Feb 18, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8654272Aug 2, 2010Feb 18, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device wherein each of a first oxide semiconductor layer and a second oxide semiconductor layer includes a portion that is in an oxygen-excess state which is in contact with a second insulatng layer
US8654582Mar 8, 2013Feb 18, 2014Semiconductor Energy Laboratory Co., Ltd.Non-volatile semiconductor memory device equipped with an oxide semiconductor writing transistor having a small off-state current
US8658448Dec 1, 2011Feb 25, 2014Semiconductor Energy Laboratory Co., Ltd.Display device and method for manufacturing the same
US8658546Oct 12, 2012Feb 25, 2014Samsung Electronics Co., Ltd.Solution composition for forming oxide thin film and electronic device including the oxide thin film
US8659013Apr 5, 2011Feb 25, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8659014Jul 1, 2011Feb 25, 2014Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8659015Feb 23, 2012Feb 25, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8659934Oct 9, 2012Feb 25, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8659935Jan 25, 2013Feb 25, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device with transistor having oxide semiconductor channel formation region
US8659941Nov 22, 2010Feb 25, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory cell having an oxide semiconductor transistor and erasable by ultraviolet light
US8659957Feb 23, 2012Feb 25, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method of driving semiconductor device
US8664036Dec 15, 2010Mar 4, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8664097Aug 30, 2011Mar 4, 2014Semiconductor Energy Laboratory Co., Ltd.Manufacturing method of semiconductor device
US8664118Jul 2, 2012Mar 4, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8664652Dec 21, 2010Mar 4, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8664653Mar 1, 2011Mar 4, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing semiconductor device
US8664658May 5, 2011Mar 4, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8665403May 16, 2011Mar 4, 2014Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display device
US8669148Aug 13, 2013Mar 11, 2014Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8669550 *Aug 1, 2008Mar 11, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8669556Nov 30, 2011Mar 11, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8669781May 25, 2012Mar 11, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8673426Jun 21, 2012Mar 18, 2014Semiconductor Energy Laboratory Co., Ltd.Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit
US8674351Dec 22, 2011Mar 18, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and semiconductor memory device
US8674354Sep 13, 2012Mar 18, 2014Semiconductor Energy Laboratory Co., Ltd.Display device with an oxide semiconductor including a crystal region
US8674738May 17, 2012Mar 18, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8674972Sep 2, 2011Mar 18, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8675382Jan 31, 2012Mar 18, 2014Semiconductor Energy Laboratory Co., Ltd.Programmable LSI
US8675394Jul 27, 2011Mar 18, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device with oxide semiconductor transistor
US8679986Sep 24, 2011Mar 25, 2014Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing display device
US8680520Nov 18, 2010Mar 25, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8680521Jan 30, 2013Mar 25, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8680522Mar 15, 2013Mar 25, 2014Semiconductor Energy Laboratory Co., Ltd.Oxide semiconductor film and semiconductor device
US8680529May 3, 2012Mar 25, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8680679Mar 1, 2011Mar 25, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing semiconductor device
US8681533Apr 23, 2012Mar 25, 2014Semiconductor Energy Laboratory Co., Ltd.Memory circuit, signal processing circuit, and electronic device
US8685787Aug 17, 2011Apr 1, 2014Semiconductor Energy Laboratory Co., Ltd.Manufacturing method of semiconductor device
US8686416Mar 15, 2012Apr 1, 2014Semiconductor Energy Laboratory Co., Ltd.Oxide semiconductor film and semiconductor device
US8686417Jul 23, 2012Apr 1, 2014Semiconductor Energy Laboratory Co., Ltd.Oxide semiconductor device formed by using multi-tone mask
US8686425Aug 14, 2012Apr 1, 2014Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8686426Jul 23, 2012Apr 1, 2014Samsung Display Co., Ltd.Thin film transistor having plural semiconductive oxides, thin film transistor array panel and display device including the same, and manufacturing method of thin film transistor
US8686486Mar 21, 2012Apr 1, 2014Semiconductor Energy Laboratory Co., Ltd.Memory device
US8686750May 5, 2011Apr 1, 2014Semiconductor Energy Laboratory Co., Ltd.Method for evaluating semiconductor device
US8686972Nov 19, 2010Apr 1, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and display device
US8687411Jan 6, 2012Apr 1, 2014Semiconductor Energy Laboratory Co., Ltd.Memory device, semiconductor device, and detecting method for defective memory cell in memory device
US8687416Dec 23, 2011Apr 1, 2014Semiconductor Energy Laboratory Co., Ltd.Signal processing circuit comprising buffer memory device
US8692243Apr 11, 2011Apr 8, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8692579May 15, 2012Apr 8, 2014Semiconductor Energy Laboratory Co., Ltd.Circuit and method of driving the same
US8692823Jul 29, 2011Apr 8, 2014Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display device and driving method of the same
US8693617May 10, 2013Apr 8, 2014Semiconductor Energy Laboratory Co., Ltd.Pulse signal output circuit and shift register
US8697488Aug 15, 2013Apr 15, 2014Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8698138Dec 13, 2012Apr 15, 2014Semiconductor Energy Laboratory Co., Ltd.Oxide semiconductor film on amorphous insulating surface
US8698143Aug 6, 2012Apr 15, 2014Semiconductor Energy Laboratory Co., Ltd.Display device
US8698155Jun 24, 2013Apr 15, 2014Semiconductor Energy Laboratory Co., Ltd.Display device
US8698214Oct 18, 2012Apr 15, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8698219Jan 11, 2011Apr 15, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device having a low off state current and high repeatability
US8698521May 15, 2012Apr 15, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8698717Dec 15, 2010Apr 15, 2014Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display device and driving method thereof
US8698970Jul 11, 2013Apr 15, 2014Semiconductor Energy Laboratory Co., Ltd.Display device and method for manufacturing the same
US8703531Feb 25, 2011Apr 22, 2014Semiconductor Energy Laboratory Co., Ltd.Manufacturing method of oxide semiconductor film and manufacturing method of transistor
US8704216Feb 17, 2010Apr 22, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8704218Oct 26, 2010Apr 22, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device having an oxide semiconductor film
US8704219Mar 25, 2011Apr 22, 2014Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8704221Dec 17, 2012Apr 22, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8704222Jul 8, 2013Apr 22, 2014Semiconductor Energy Laboratory Co., Ltd.Field effect transistor
US8704267Oct 15, 2009Apr 22, 2014Semiconductor Energy Laboratory Co., Ltd.Light-emitting display device
US8704806Dec 6, 2010Apr 22, 2014Semiconductor Energy Laboratory Co., Ltd.Display device and driving method thereof
US8705267Nov 30, 2011Apr 22, 2014Semiconductor Energy Laboratory Co., Ltd.Integrated circuit, method for driving the same, and semiconductor device
US8705292May 8, 2012Apr 22, 2014Semiconductor Energy Laboratory Co., Ltd.Nonvolatile memory circuit with an oxide semiconductor transistor for reducing power consumption and electronic device
US8709688Apr 23, 2013Apr 29, 2014Fuji Xerox Co., Ltd.Oxide material, electrophotographic photoreceptor, process cartridge, and image forming device
US8709864Nov 3, 2010Apr 29, 2014Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor element and semiconductor device, and deposition apparatus
US8709889May 15, 2012Apr 29, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device and manufacturing method thereof
US8709920Feb 16, 2012Apr 29, 2014Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8709922Apr 17, 2012Apr 29, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8710499Feb 19, 2013Apr 29, 2014Semiconductor Energy Laboratory Co., Ltd.Transistor and display device
US8710762Jun 7, 2011Apr 29, 2014Semiconductor Energy Laboratory Co., Ltd.DC/DC converter, power supply circuit, and semiconductor device
US8711312Apr 8, 2011Apr 29, 2014Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display device
US8711314Mar 11, 2013Apr 29, 2014Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display device
US8711623Mar 22, 2013Apr 29, 2014Semicondoctor Energy Laboratory Co., Ltd.Memory device and semiconductor device
US8716061Dec 18, 2012May 6, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8716073Jul 12, 2012May 6, 2014Semiconductor Energy Laboratory Co., Ltd.Method for processing oxide semiconductor film and method for manufacturing semiconductor device
US8716646Oct 4, 2011May 6, 2014Semiconductor Energy Laboratory Co., Ltd.Photoelectric conversion device and method for operating the same
US8716708Sep 25, 2012May 6, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8716712Feb 15, 2011May 6, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8717806Jan 3, 2012May 6, 2014Semiconductor Energy Laboratory Co., Ltd.Storage element, storage device, signal processing circuit, and method for driving storage element
US8718224Jul 30, 2012May 6, 2014Semiconductor Energy Laboratory Co., Ltd.Pulse signal output circuit and shift register
US8723173Sep 22, 2010May 13, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device, power circuit, and manufacturing method of semiconductor device
US8723175Jan 24, 2013May 13, 2014Idemitsu Kosan Co., Ltd.Oxide semiconductor field effect transistor and method for manufacturing the same
US8723176Jan 28, 2013May 13, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8724407Mar 23, 2012May 13, 2014Semiconductor Energy Laboratory Co., Ltd.Signal processing circuit
US8728860Aug 17, 2011May 20, 2014Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8728883Nov 16, 2011May 20, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing semiconductor device
US8729545Apr 24, 2012May 20, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device
US8729547Dec 26, 2012May 20, 2014Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8729550Jul 14, 2010May 20, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing semiconductor device
US8729613Oct 11, 2012May 20, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8729938May 16, 2012May 20, 2014Semiconductor Energy Laboratory Co., Ltd.Phase locked loop and semiconductor device using the same
US8730186May 27, 2010May 20, 2014Semiconductor Energy Laboratory Co., Ltd.Touch panel
US8730416Dec 1, 2011May 20, 2014Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display device
US8730730Jan 24, 2012May 20, 2014Semiconductor Energy Laboratory Co., Ltd.Temporary storage circuit, storage device, and signal processing circuit
US8735882 *Jan 14, 2011May 27, 2014Samsung Electronics Co., Ltd.ZnO based semiconductor devices and methods of manufacturing the same
US8735884Oct 1, 2012May 27, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device including oxide semiconductor
US8735892Dec 23, 2011May 27, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device using oxide semiconductor
US8736371May 10, 2012May 27, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device having transistors each of which includes an oxide semiconductor
US8737109Aug 23, 2011May 27, 2014Semiconductor Energy Laboratory Co., Ltd.Memory device and semiconductor device
US8742412Jan 30, 2009Jun 3, 2014Canon Kabushiki KaishaThin film transistor using an oxide semiconductor and display
US8742422Aug 30, 2010Jun 3, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8742544Feb 19, 2013Jun 3, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8742804May 17, 2012Jun 3, 2014Semiconductor Energy Laboratory Co., Ltd.Divider circuit and semiconductor device using the same
US8743030Jun 11, 2010Jun 3, 2014Semiconductor Energy Laboratory Co., Ltd.Display device and driving method of display device
US8743307Jun 7, 2012Jun 3, 2014Samsung Display Co, Ltd.Display device
US8743590Apr 5, 2012Jun 3, 2014Semiconductor Energy Laboratory Co., Ltd.Memory device and semiconductor device using the same
US8748215Nov 22, 2010Jun 10, 2014Semiconductor Energy Laboratory Co., Ltd.Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
US8748223Sep 23, 2010Jun 10, 2014Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device
US8748224Aug 4, 2011Jun 10, 2014Semiconductor Energy Laboratory Co., Ltd.Manufacturing method of semiconductor device
US8748240Dec 13, 2012Jun 10, 2014Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8748241Dec 17, 2012Jun 10, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8748880Nov 19, 2010Jun 10, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device with oxide semiconductor
US8748881Nov 22, 2010Jun 10, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8748886Jun 26, 2012Jun 10, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing semiconductor device
US8748887Sep 13, 2012Jun 10, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8748889Jul 22, 2011Jun 10, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method of manufacturing the same
US8749930Jan 26, 2010Jun 10, 2014Semiconductor Energy Laboratory Co., Ltd.Protection circuit, semiconductor device, photoelectric conversion device, and electronic device
US8750023Sep 12, 2011Jun 10, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device
US8753491Nov 12, 2010Jun 17, 2014Semiconductor Energy Laboratory Co., Ltd.Method for packaging target material and method for mounting target
US8753548Dec 7, 2009Jun 17, 2014Idemitsu Kosan Co., Ltd.Composite oxide sintered body and sputtering target comprising same
US8753928Mar 7, 2012Jun 17, 2014Semiconductor Energy Laboratory Co., Ltd.Method of manufacturing semiconductor device
US8754409Mar 23, 2012Jun 17, 2014Semiconductor Energy Laboratory Co., Ltd.Field-effect transistor, and memory and semiconductor circuit including the same
US8754693Mar 1, 2013Jun 17, 2014Semiconductor Energy Laboratory Co., Ltd.Latch circuit and semiconductor device
US8754839Nov 1, 2011Jun 17, 2014Semiconductor Energy Laboratory Co., Ltd.Method for driving display device
US8759132Dec 3, 2012Jun 24, 2014Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8759167Nov 29, 2012Jun 24, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8759206Jun 4, 2013Jun 24, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8759820Aug 9, 2011Jun 24, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8760442Feb 17, 2011Jun 24, 2014Semiconductor Energy Laboratory Co., Ltd.Display device and E-book reader provided therewith
US8760903Mar 5, 2012Jun 24, 2014Semiconductor Energy Laboratory Co., Ltd.Storage circuit
US8760931Sep 23, 2013Jun 24, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8765522Nov 22, 2010Jul 1, 2014Semiconductor Energy Laboratory Co., Ltd.Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
US8766250Nov 19, 2010Jul 1, 2014Semiconductor Energy Laboratory Co., Ltd.Thin film transistor
US8766252Jun 23, 2011Jul 1, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device comprising an oxide semiconductor
US8766253Aug 24, 2011Jul 1, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8766255Mar 13, 2012Jul 1, 2014Semiconductor Energy Laboratory Co., Ltd.Oxide semiconductor device including gate trench and isolation trench
US8766329Jun 14, 2012Jul 1, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and a method for manufacturing the same
US8766338Mar 3, 2011Jul 1, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device including photosensor and transistor having oxide semiconductor
US8766608Oct 21, 2010Jul 1, 2014Semiconductor Energy Laboratory Co., Ltd.Voltage regulator circuit and semiconductor device, including transistor using oxide semiconductor
US8767159Apr 20, 2012Jul 1, 2014Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display device
US8767442Sep 12, 2011Jul 1, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device including memory cell array
US8767443Sep 19, 2011Jul 1, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device and method for inspecting the same
US8772093Dec 18, 2012Jul 8, 2014Semiconductor Energy Laboratory Co., Ltd.Manufacturing method of semiconductor device
US8772094Nov 20, 2012Jul 8, 2014Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8772160Feb 17, 2011Jul 8, 2014Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor element and deposition apparatus
US8772701May 23, 2011Jul 8, 2014Semiconductor Energy Laboratory Co., Ltd.Photodetector and display device with light guide configured to face photodetector circuit and reflect light from a source
US8772768Dec 20, 2011Jul 8, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing
US8772769Oct 5, 2012Jul 8, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing semiconductor device
US8772771Apr 25, 2013Jul 8, 2014Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8772784Feb 21, 2013Jul 8, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device including pair of electrodes and oxide semiconductor film with films of low conductivity therebetween
US8772849Mar 2, 2012Jul 8, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device
US8773173Dec 13, 2012Jul 8, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device, image display device, storage device, and electronic device
US8773906Jan 24, 2012Jul 8, 2014Semiconductor Energy Laboratory Co., Ltd.Memory circuit
US8778729Jul 28, 2011Jul 15, 2014Semiconductor Energy Laboratory Co., Ltd.Manufacturing method of semiconductor device
US8779418Oct 7, 2010Jul 15, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8779419Mar 9, 2012Jul 15, 2014Idemitsu Kosan Co., Ltd.Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor
US8779420Nov 23, 2012Jul 15, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8779432Jan 20, 2012Jul 15, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8779433May 25, 2011Jul 15, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8779479Feb 28, 2013Jul 15, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8779488Apr 10, 2012Jul 15, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device
US8779799May 9, 2012Jul 15, 2014Semiconductor Energy Laboratory Co., Ltd.Logic circuit
US8780307Mar 1, 2012Jul 15, 2014Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display device and electronic device
US8780614Feb 1, 2012Jul 15, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device
US8785241Jul 1, 2011Jul 22, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8785242Sep 13, 2011Jul 22, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8785258Dec 11, 2012Jul 22, 2014Semiconductor Energy Laboratory Co., Ltd.Method for manufacturing semiconductor device
US8785265Nov 26, 2013Jul 22, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US8785266Jan 9, 2012Jul 22, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereof
US8785923Apr 17, 2012Jul 22, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8785926Apr 11, 2013Jul 22, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8785928May 30, 2013Jul 22, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8785929Jun 25, 2013Jul 22, 2014Semiconductor Energy Laboratory Co. Ltd.Semiconductor device and method for manufacturing the same
US8785933Feb 23, 2012Jul 22, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8785990Jan 4, 2012Jul 22, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device including first and second or drain electrodes and manufacturing method thereof
US8786311Oct 22, 2013Jul 22, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US8786588Feb 18, 2011Jul 22, 2014Semiconductor Energy Laboratory Co., Ltd.Display device and driving method thereof
US8787073Aug 23, 2011Jul 22, 2014Semiconductor Energy Laboratory Co., Ltd.Signal processing circuit and method for driving the same
US8787083Feb 3, 2012Jul 22, 2014Semiconductor Energy Laboratory Co., Ltd.Memory circuit
US8787084Mar 26, 2012Jul 22, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and driving method thereof
US8787102May 17, 2012Jul 22, 2014Semiconductor Energy Laboratory Co., Ltd.Memory device and signal processing circuit
US20080315194 *Jun 19, 2008Dec 25, 2008Samsung Electronics Co., Ltd.Oxide semiconductors and thin film transistors comprising the same
US20090008639 *Aug 1, 2008Jan 8, 2009Semiconductor Energy Laboratory Co., Ltd.Semiconductor Device and Manufacturing Method Thereof
US20090305461 *Aug 17, 2009Dec 10, 2009Semiconductor Energy Laboratory Co,. Ltd.Semiconductor Device And Manufacturing Method Thereof
US20100264419 *Jan 20, 2009Oct 21, 2010Canon Kabushiki KaishaField-effect transistor
US20110101342 *Jan 14, 2011May 5, 2011Chang-Jung KimZnO based semiconductor devices and methods of manufacturing the same
US20110201162 *Apr 29, 2011Aug 18, 2011Japan Science And Technology AgencyAmorphous oxide and thin film transistor
US20120037901 *Apr 24, 2009Feb 16, 2012Cambridge Enterprise Ltd.Oxide semiconductor
US20120228608 *Nov 18, 2010Sep 13, 2012Koki YanoSputtering target and thin film transistor equipped with same
US20120235137 *Mar 8, 2012Sep 20, 2012Semiconductor Energy Laboratory Co., Ltd.Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device
US20120235140 *May 30, 2012Sep 20, 2012Semiconductor Energy Laboratory Co., Ltd.Manufacturing method of semiconductor device
US20130020569 *Jul 12, 2012Jan 24, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US20130056727 *Sep 4, 2012Mar 7, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US20130187151 *Jan 10, 2013Jul 25, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
EP1950177A1 *Nov 16, 2006Jul 30, 2008Idemitsu Kosan Co., Ltd.Semiconductor thin film, method for producing same, and thin film transistor
EP2061087A2 *Nov 14, 2008May 20, 2009FUJIFILM CorporationThin film field effect transistor and display using the same
EP2068367A1 *Jun 10, 2008Jun 10, 2009Samsung Electronics Co., Ltd.Methods of manufacturing an oxide semiconductor thin film transistor
EP2150982A1 *Apr 15, 2008Feb 10, 2010Canon Kabushiki KaishaAmorphous oxide semiconductor, semiconductor device, and thin film transistor
EP2159844A2Aug 4, 2009Mar 3, 2010Canon Kabushiki KaishaAmorphous oxide semiconductor and thin film transistor using the same
EP2175493A1Oct 6, 2009Apr 14, 2010Canon Kabushiki KaishaField effect transistor and process for production thereof
EP2422372A1 *Apr 24, 2009Feb 29, 2012Panasonic CorporationOxide semiconductor
WO2009031634A1Aug 29, 2008Mar 12, 2009Canon KkField effect transistor
WO2009041544A1 *Sep 18, 2008Apr 2, 2009Canon KkThin film transistor, manufacturing method therefor, and display apparatus using the same
WO2009041713A2 *Sep 25, 2008Apr 2, 2009Canon KkMethod for manufacturing an oxide semiconductor field-effect transistor
WO2009075242A1 *Dec 2, 2008Jun 18, 2009Canon KkOxide field effect transistor
WO2011070887A1 *Nov 4, 2010Jun 16, 2011Semiconductor Energy Laboratory Co., Ltd.Field effect transistor
WO2011096264A1 *Jan 11, 2011Aug 11, 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method of driving semiconductor device
Classifications
U.S. Classification257/347, 257/E21.462
International ClassificationG02F1/1345, H01L29/786, H01L21/84, H01L27/12, G02F1/1368, H01L21/363, H01L21/77
Cooperative ClassificationH01L29/7869, H01L21/02631, H01L29/78696, H01L29/78693, H01L27/1225, C23C14/086, C23C14/28, C23C14/0021, H01L21/02554, H01L21/02565, C23C14/3414
European ClassificationC23C14/08L, C23C14/00F, C23C14/28, C23C14/34B2, H01L27/12T, H01L29/786K2, H01L29/786S, H01L29/786K, H01L21/02K4C1C1, H01L21/02K4C1D, H01L21/02K4E3P
Legal Events
DateCodeEventDescription
Sep 11, 2006ASAssignment
Owner name: JAPAN SCIENCE AND TECHNOLOGY AGENCY, JAPAN
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:HOSONO, HIDEO;HIRANO, MASAHIRO;OTA, HIROMICHI;AND OTHERS;REEL/FRAME:018306/0034;SIGNING DATES FROM 20060623 TO 20060627