US 20080186760 A1
A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough, a layer of phase change material disposed on top of a portion of the thin wire structure, and sensing circuitry configured to sense the resistance of the phase change material.
16. A method of forming a programmable phase change material (PCM) structure, the method comprising:
forming a polysilicon layer over a semiconductor substrate, at a location corresponding to a transistor gate level of a semiconductor device;
patterning the polysilicon layer so as to define a pair of electrodes and a thin wire structure connecting the electrodes;
forming a silicide metal layer over the patterned polysilicon layer so as to define a heater element; and
forming a layer of phase change material disposed on top of a portion of the thin wire structure of the heater element;
wherein the portions of the silicide metal layer corresponding to the thin wire structure in contact with a portion of the phase change material are configured to selectively heat the portion of phase change material in a manner that programs the phase change material into one of a low resistance crystalline state and a high resistance amorphous state.
17. The method of
18. The method of
titanium silicide, cobalt silicide, nickel silicide, platinum silicide, tungsten silicide, tantalum silicide, erbium silicide and ytterbium silicide.
19. The method of
20. The method of 19, further comprising forming one or more contact vias on an extended portion of the phase change material not in direct contact with the thin wire structure, the one or more contact vias configured to provide a connection to sense circuitry configured to sense the resistance of the phase change material.
The present invention relates generally to integrated circuit devices and, more particularly, to programmable fuse/non-volatile memory structures (and arrays) using externally heated phase change material.
Electrically programmable fuse (eFUSE) devices have many practical applications such as, for example, redundancy implementation in memory arrays, field programmable arrays, voltage trimming resistors/capacitors, RF circuit tuning, electronic chip identification, usage tracking/diagnostic data logging, remote disabling of a device/car that is reported stolen, read only memory (ROM), etc. Existing eFUSE technology is based on various different techniques such as, for example, electromigration (IBM), rupture (Infineon) and agglomeration (Intel). However, each of these existing fuse technologies are “one-shot,” in that once the fuse is blown, it cannot be returned to a conducting state. Moreover, such devices occupy relatively large areas, involve large amounts of power/current, and are very slow to program (e.g., several microseconds).
On the other hand, reprogrammable fuses utilizing chalcogenide materials (and indirect heating through a resistive heater) are described in U.S. Pat. No. 6,448,576 to Davis et al. However, such chalcogenide fuse materials emit large amounts of heat, and it is estimated that switching currents needed to produce the required programming heat are on the order of about 15 mA. Under this assumption, a required heater current of 15 mA would in turn result in a design that is inconveniently large, requiring a driver FET width on the order of about 15 microns.
Accordingly, as eFUSE technology develops, it will be desirable to be able to address existing concerns pertaining to higher performance, including factors such as: reducing the device area taken up by the fuse, cope with the “sunsetting” of the nonstandard high voltages/currents required by existing programmable fuse devices, the desirability of having multishot reprogrammable fuses, and enhanced speed, among other aspects.
The foregoing discussed drawbacks and deficiencies of the prior art are overcome or alleviated by a programmable phase change material (PCM) structure. In an exemplary embodiment, the structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough, a layer of phase change material disposed on top of a portion of the thin wire structure, and sensing circuitry configured to sense the resistance of the phase change material.
In another embodiment, a non-volatile, programmable phase change material (PCM) memory array includes a plurality of memory cells arranged in rows and columns, with each memory cell comprising a heater element formed at a transistor gate level of a semiconductor device; the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes; the heater element configured to receive programming current passed therethrough; a layer of phase change material disposed on top of a portion of the thin wire structure; and sensing circuitry configured to sense the resistance of the phase change material.
In still another embodiment, a method of forming a programmable phase change material (PCM) structure includes forming a polysilicon layer over a semiconductor substrate, at a location corresponding to a transistor gate level of a semiconductor device; patterning the polysilicon layer so as to define a pair of electrodes and a thin wire structure connecting the electrodes; forming a silicide metal layer over the patterned polysilicon layer so as to define a heater element; and forming a layer of phase change material disposed on top of a portion of the thin wire structure of the heater element; wherein the portions of the silicide metal layer corresponding to the thin wire structure in contact with a portion of the phase change material are configured to selectively heat the portion of phase change material in a manner that programs the phase change material into one of a low resistance crystalline state and a high resistance amorphous state.
Referring to the exemplary drawings wherein like elements are numbered alike in the several Figures:
Disclosed herein are electrically reprogrammable fuse (eFUSE) devices and non-volatile memory structures such as Phase Change Random Access Memory (“PCRAM” also referred to as “PRAM”), as well as arrays thereof using externally heated, phase change material. Such devices may be advantageously integrated at a gate-level of device formation (i.e., at the front-end-of-line), thereby involving minimal changes to standard CMOS processing technology.
Certain phase change materials (such as Ge—Sb—Te (GST) alloys) have a programmable electrical resistance that changes with temperature. Other compositions such as GeSb4, (including substitution/addition of other elements) are also possible for the phase change materials. Individual phase change elements (PCE) are thus used as programmable eFUSEs or as the storage cells of a memory device. The state of an individual PCE is programmed through a heating and cooling process which is electrically controlled by passing a current through the PCE (or a discrete heating element in proximity to the PCE) and the resulting ohmic heating that occurs. Depending upon the specific applied temperature and duration of heating applied to the PCE element, the structure is either “set” to a lower resistance crystalline state or “reset” to an amorphous, higher resistance state. Essentially, there is no practical limit to the number of times a PCE element may be programmed from the crystalline state to the amorphous state and vice versa.
The changing of the phase of a PCE typically requires a high temperature (e.g., considerably above the PCM melting temperature of about 600° C.), as can be obtained by Joule heating from current flowing through the phase change material or discrete resistor. When the phase change material is heated above its melting temperature to thereafter be quickly cooled, the phase change material becomes amorphous to result in a severed electrical connection in the case of an eFUSE, or to store a data bit of one logical value in the case of a memory element. Alternatively, when the phase change material is heated above its crystallization temperature and maintained at that temperature for a predetermined time before cooling, the phase change material becomes crystalline to result in a restored electrical connection in the case of an eFUSE, or to store a data bit of the opposite logical value in the case of a memory element.
From a practical standpoint, some of the design requirements for a PCM-based eFUSE or non-volatile memory device include the capability of functionally perform the SET and RESET operations for a very large number of cycles (e.g., on the order of about 1011), the capability of reading/sensing the state of the fuse/memory element, the limitation on the amount of power/current needed to program the PCM, and the need to minimize the cost and time requirements to implement the structure with minimal changes to standard CMOS processing.
Referring now to
As also part of a CMOS process, the polysilicon material is provided with silicide metal contacts for ohmic contact with upper wiring levels. As is known in the art, a silicide layer 212 is formed over polysilicon by deposition of a suitable refractory metal (e.g., cobalt, nickel, titanium, tantalum, tungsten, platinum, erbium, ytterbium, etc.) followed by a high-temperature anneal. The portions of the metal layer in contact with silicon react with the silicon during the anneal to form a conductive silicide metal layer. As this is a self-aligning process with respect to silicon, it is also known in the art as a “salicide” process.
Following the silicide metal formation, a layer of PCM 214 is formed over the heater element in a generally perpendicular direction with respect to the orientation of the wire structure 208, as best seen in
In order to convert the PCM layer 214 to the insulating state, the quench or RESET operation, the programming transistor 302 (e.g., an NFET) is activated by a relatively high input voltage on Vgate to deliver a high current, followed by a rapid shut off of the transistor 302. Upon turning off the current through the heater, heat is rapidly conducted away from the silicide material 212 and PCM layer 214, through the polysilicon, resulting in a quench of the PCM 214. Accordingly, as a result of such a RESET operation, the portion of the PCM layer 214 in proximity to the silicide heater (shown in different shading in
Conversely, in order to restore the PCM layer 214 back to the conducting state, the anneal or SET operation is implemented by turning on transistor 302 with a relatively low input voltage on Vgate to deliver a lower current with respect to the RESET operation, and thereafter shutting off transistor 302. The high resistance portion of the PCM layer 214 is annealed back to the low resistance, crystalline state shown in
As indicated above, in addition to reprogrammable eFUSEs, the structure of
In particular, the programming transistor 502 include a polysilicon gate conductor 504 formed over a gate insulating layer 506, which is in turn formed over a non-insulated portion of the substrate 202. Integration of the programming transistor is fairly straightforward with respect to CMOS processing, including doping of the source/drain regions 508. It is noted that during silicidation, silicide contacts 212 are also formed over the silicon containing gate conductor 504 and source/drain regions 508. Also illustrated in
In contrast to the eFUSE embodiment, the sense circuitry associated with the non-volatile memory cell 500 does not typically rely on the heater supply voltage to supply an input signal thereto. This is schematically depicted in the schematic diagram of
Referring generally to
In order to program a cell (for example, in column A) the PA switches are closed and the SA switches are opened. A programming (high) voltage is thus applied by the adjustable power supply 706 to the appropriate Vp line connected to the cell, and the gate line (e.g., Vg1, Vg2, etc.) corresponding to the cell to be programmed is pulsed. The magnitude and duration of the pulse is selected between one having a low magnitude and slow ramp down (e.g., low resistance for writing a logical 0) and one having a large magnitude and fast ramp down (e.g., high resistance for writing a logical 1). Optionally, programming can be done for all 0's or all 1's on the same gate line at the same time.
To sense (read) a cell in column A, for example, the PA switches are opened and the SA switches are closed. A sensing (low) voltage, below the programming threshold, is then applied to the sense line VsA, and the gate line (e.g., Vg1, Vg2, etc.) corresponding to the cell to be sensed is pulsed. A parallel output of all cells attached to the selected gate line is coupled to the corresponding current sense output 710, thus generating, for example, Sense_out_A in column A.
The array of
Notwithstanding the particular application of a PCM device as discussed above (e.g., reprogrammable eFUSE, non-volatile PRAM, etc.), certain key aspects of the operation of a PCM device include the quench time and the quench (RESET) power. For example, the quench time must be short (e.g., on a nanosecond time scale), in order for the melted PCM material cool to the amorphous state rather than recrystallizing. The power required to melt the material is supplied through a programming transistor, and the length of this transistor scales in accordance with the programming current supplied thereby. In addition, the transistor width is a main factor in the area per stored memory bit. Thus, minimizing programming power is a key factor in minimizing the area per bit.
Thermal simulations are based on solving the thermal diffusion equation:
for the temperature T(r, t), with specific heat at constant volume, CV, diffusion coefficient, K(T), and heating rate, H(r, t). Since the high thermal conductivity of the silicon wire plays a key role in both the thermal time constant and in the required power, it is important to take into account the substantial decrease in this thermal conductivity with increasing temperature, as reflected in the graph of
Referring now to
In the simulations depicted, a temperature dependent heating rate was applied to the silicide for 34 ns, followed by a zero heating rate for an additional 6 ns. The temperature increases at all locations of the device during the heating, causing the melting of all portions of the PCM 214 in contact with the silicide 212. Once the heating rate drops to zero, the temperature correspondingly decreases at all locations, but in particular, the temperature in the PCM 214 drops very suddenly (to below the melting temperature) within about 1 ns. This is fast enough to quench the PCM and render it non-conducting.
In a physical implementation of the disclosed embodiments of the eFUSE and memory cell shown in
Of the three silicides listed in
With regard to NiSi, certain challenges include more complex phase formation (multiple metal rich phases), the possibility of forming higher resistivity NiSi2 in BEOL anneals, and lower morphological stability. On the other hand, one advantage of NiSi is that it addresses the problem of voiding in narrow polysilicon lines, provided that measures are taken to prevent other silicide phases from forming. This may be achieved by an additional doping (e.g., Re, Rh or Hf, in addition to Pt). Rutherford Backscattering Spectroscopy (RBS) analysis of a GST-225/NiSi (5% Pt) interface indicates stable at least up to about 505° C. This is in part due to a thin native (about 25 Å) SiO2 layer on the surface of the silicide, which acts as a (inter)diffusion barrier. By adding a thin Ti layer at the interface to form GST-225/Ti/NiSi (5% Pt) stack, some interface reaction is taking place, since Ti is a very effective oxygen getter (by reducing the SiO2 on the NiSi and/or diffusing into the GST). To maintain the integrity of the interface at high temperatures, a barrier layer of nitride or oxide may be used.
While the invention has been described with reference to a preferred embodiment or embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted for elements thereof without departing from the scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from the essential scope thereof. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed as the best mode contemplated for carrying out this invention, but that the invention will include all embodiments falling within the scope of the appended claims.