|Publication number||US20090101879 A1|
|Application number||US 11/876,179|
|Publication date||Apr 23, 2009|
|Filing date||Oct 22, 2007|
|Priority date||Oct 22, 2007|
|Also published as||CN101419940A, CN101419940B, US7919766, US8222071, US20110165753|
|Publication number||11876179, 876179, US 2009/0101879 A1, US 2009/101879 A1, US 20090101879 A1, US 20090101879A1, US 2009101879 A1, US 2009101879A1, US-A1-20090101879, US-A1-2009101879, US2009/0101879A1, US2009/101879A1, US20090101879 A1, US20090101879A1, US2009101879 A1, US2009101879A1|
|Inventors||Hsiang Lan Lung|
|Original Assignee||Macronix International Co., Ltd.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Referenced by (1), Classifications (18), Legal Events (2)|
|External Links: USPTO, USPTO Assignment, Espacenet|
International Business Machines Corporation, a New York corporation; Macronix International Corporation, Ltd., a Taiwan corporation, and Qimonda AG, a German corporation, are parties to a Joint Research Agreement.
1. Field of the Invention
The present invention relates to high density memory devices based on memory materials, for example resistor random access memory (RRAM) devices, and to methods for manufacturing such devices. The memory material is switchable between electrical property states by the application of energy. The memory materials may be phase change based memory materials, including chalcogenide based materials, and other materials.
2. Description of Related Art
Phase change based memory materials are widely used in read-write optical disks. These materials have at least two solid phases, including for example a generally amorphous solid phase and a generally crystalline solid phase. Laser pulses are used in read-write optical disks to switch between phases and to read the optical properties of the material after the phase change.
Phase change based memory materials, like chalcogenide based materials and similar materials, also can be caused to change phase by application of electrical current at levels suitable for implementation in integrated circuits. The generally amorphous state is characterized by higher resistivity than the generally crystalline state; this difference in resistance can be readily sensed to indicate data. These properties have generated interest in using programmable resistive material to form nonvolatile memory circuits, which can be read and written with random access.
The change from the amorphous to the crystalline state is generally a lower current operation. The change from crystalline to amorphous, referred to as reset herein, is generally a higher current operation, which includes a short high current density pulse to melt or breakdown the crystalline structure, after which the phase change material cools quickly, quenching the phase change process, allowing at least a portion of the phase change structure to stabilize in the amorphous state. It is desirable to minimize the magnitude of the reset current used to cause transition of phase change material from crystalline state to amorphous state. The magnitude of the reset current needed for reset can be reduced by reducing the size of the phase change material element in the cell and by reducing the size of the contact area between electrodes and the phase change material, so that higher current densities are achieved with small absolute current values through the phase change material element.
One direction of development has been toward using small quantities of programmable resistive material, particularly in small pores. Patents illustrating development toward small pores include: Ovshinsky, “Multibit Single Cell Memory Element Having Tapered Contact,” U.S. Pat. No. 5,687,112, issued Nov. 11, 1997; Zahorik et al., “Method of Making Chalogenide [sic] Memory Device,” U.S. Pat. No. 5,789,277, issued Aug. 4, 1998; Doan et al., “Controllable Ovonic Phase-Change Semiconductor Memory Device and Methods of Fabricating the Same,” U.S. Pat. No. 6,150,253, issued Nov. 21, 2000.
In phase change memory, data is stored by causing transitions in the phase change material between amorphous and crystalline states using current. Current heats the material and causes transitions between the states. The change from the amorphous to the crystalline state is generally a lower current operation. The change from crystalline to amorphous, referred to as reset herein, is generally a higher current operation. It is desirable to minimize the magnitude of the reset current used to cause transition of phase change material from crystalline state to amorphous state. The magnitude of the reset current needed for reset can be reduced by reducing the size of the active phase change material element in the cell. One problem associated with phase change memory devices arises because the magnitude of the current required for reset operations depends on the volume of phase change material that must change phase. Thus, cells made using standard integrated circuit manufacturing processes have been limited by the minimum feature size of manufacturing equipment. Thus, techniques to provide sublithographic dimensions for the memory cells must be developed, which can lack uniformity or reliability needed for large scale, high density memory devices.
One approach to controlling the size of the active area in a phase change cell is to devise very small electrodes for delivering current to a body of phase change material. This small electrode structure induces phase change in the phase change material in a small area like the head of a mushroom, at the location of the contact. See, U.S. Pat. No. 6,429,064, issued Aug. 6, 2002, to Wicker, “Reduced Contact Areas of Sidewall Conductor;” U.S. Pat. No. 6,462,353, issued Oct. 8, 2002, to Gilgen, “Method for Fabricating a Small Area of Contact Between Electrodes;” U.S. Pat. No. 6,501,111, issued Dec. 31, 2002, to Lowrey, “Three-Dimensional (3D) Programmable Device;” U.S. Pat. No. 6,563,156, issued Jul. 1, 2003, to Harshfield, “Memory Elements and Methods for Making Same.” One method for making stacked phase change memory devices uses crossing line patterns to create the stacks. See, for example, U.S. Pat. No. 6,579,760 issued Jun. 17, 2003, to Lung, “Self-Aligned, Programmable Phase Change Memory” and U.S. Pat. No. 6,940,109 issued Sep. 6, 2005, to Patel et al., “High-Density 3-D Rail Stack Arrays and Method of Making.”
Accordingly, an opportunity arises to devise methods and structures that form memory cells with structures that have small active regions of programmable resistive material using reliable and repeatable manufacturing techniques.
One example of a method for making a memory cell assembly is carried out as follows. A memory cell access layer is formed over a substrate to create an access device comprising a bottom electrode. A first memory subassembly is formed to extend over the memory cell access layer in a first direction. The first memory subassembly comprises a first electrically conductive material and a memory material. The memory material is in electrical contact with the bottom electrode. The first memory subassembly has a first height above the memory cell access layer. A first fill layer is formed over the memory cell access layer to create a second subassembly. The fill layer has a second height above the memory cell access layer. The first and second heights are generally equal. A top electrode is formed on the second subassembly. The top electrode extends in a second direction transverse to the first direction and crosses over and is in electrical contact with the first electrically conductive material. In some examples the first memory subassembly forming step may comprise the following. A memory material layer is formed over the memory cell access layer, the memory material layer being in electrical contact with the bottom electrode. A first electrically conductive layer is formed over the memory material layer. A first mask is formed over the first electrically conductive layer, the first mask extending in the first direction. The first mask is trimmed at least at a first position along the first mask. Those portions of the first electrically conductive layer and the memory material layer not covered by the first mask are removed. In some examples the first mask forming and first mask trimming steps may be carried out using a chosen mask forming process and a chosen mask trimming process. The chosen mask forming process has a minimum feature size so that the memory element has a second memory element dimension in the second direction. The second memory element dimension is smaller than the minimum feature size of the chosen mask forming process.
One example of a memory cell assembly comprises a memory cell access layer, a top contact layer and a memory cell layer therebetween. The memory cell access layer comprises a bottom contact. The top contact layer comprises a top contact. The memory cell layer comprises a pillar-like memory element having a cross-sectional area and first and second dimensions measured in first and second transverse directions. The memory element is electrically connected to the bottom and top contacts. The first and second dimensions are smaller than a minimum feature size for a process used to form the memory element.
Other features, aspects and advantages of the present invention can be seen on review the figures, the detailed description, and the claims which follow.
The following description of the invention will typically be with reference to specific structural embodiments and methods. It is to be understood that there is no intention to limit the invention to the specifically disclosed embodiments and methods but that the invention may be practiced using other features, elements, methods and embodiments. Preferred embodiments are described to illustrate the present invention, not to limit its scope, which is defined by the claims. Those of ordinary skill in the art will recognize a variety of equivalent variations on the description that follows. Like elements in various embodiments are commonly referred to with like reference numerals.
With regard to directional descriptions herein, the orientation of the drawings establish their respective frames of reference, with “up”, “down”, “left” and “right” referring to directions shown on the respective drawings. Similarly, “thickness” refers to a vertical dimension and “width” to the horizontal. These directions have no application to orientation of the circuits in operation or otherwise, as will be understood by those in the art.
A controller 34 implemented in this example, using a bias arrangement state machine, controls the application of bias arrangement supply voltages 36, such as read, program, erase, erase verify and program verify voltages. Controller 34 may be implemented using special-purpose logic circuitry as known in the art. In alternative embodiments, controller 34 comprises a general-purpose processor, which may be implemented on the same integrated circuit to execute a computer program to control the operations of the device. In yet other embodiments, a combination of special-purpose logic circuitry and a general-purpose processor may be utilized for implementation of controller 34.
As shown in
Memory cell device 66 also includes polysilicon word lines 94 within dielectric layer 71, drain regions 98 within substrate 70 and beneath bottom electrodes 72 and source region 100 within substrate 70 beneath common source line 74. A gate oxide region, not shown, is typically formed in substrate 70 adjacent to layer 68. In this example transistors act as the access devices 102. Other access devices, such as diodes, may also be used.
The dielectric materials of layers 71, 76 and 86 may comprise an electrical insulator including one or more elements selected from the group consisting of Si, Ti, Al, Ta, N, O, and C. In preferred devices, the dielectric materials have a low thermal conductivity, less than about 0.014 J/cm*K*sec. In other preferred embodiments, when memory element 84 is made from a phase change material, the thermally insulating dielectric material of first fill material layer 76 has a thermal conductivity less than that of the amorphous state of the phase change material, or less than about 0.003 J/cm*K*sec for a phase change material comprising GST. Representative thermally insulating materials include materials that are a combination of the elements silicon Si, carbon C, oxygen O, fluorine F, and hydrogen H. Examples of thermally insulating materials which are candidates for use for the thermally insulating dielectric material for layer 76 include SiO2, SiCOH, polyimide, polyamide, and fluorocarbon polymers. Other examples of materials which are candidates for use for the thermally insulating dielectric materials include fluorinated SiO2, silsesquioxane, polyarylene ethers, parylene, fluoro-polymers, fluorinated amorphous carbon, diamond like carbon, porous silica, mesoporous silica, porous silsesquioxane, porous polyimide, and porous polyarylene ethers. In other embodiments, the thermally insulating structure comprises a gas-filled void for thermal insulation. A single layer or combination of layers within the dielectric materials can provide thermal and electrical insulation.
Useful characteristics of a programmable resistive type of memory material, like a phase change material, include the material having a resistance which is programmable, and preferably in a reversible manner, such as by having at least two solid phases that can be reversibly induced by electrical current. These at least two phases include an amorphous phase and a crystalline phase. However, in operation, the programmable resistive material may not be fully converted to either an amorphous or crystalline phase. Intermediate phases or mixtures of phases may have a detectable difference in material characteristics. The two solid phases should generally be bistable and have different electrical properties. The programmable resistive material may be a chalcogenide material. A chalcogenide material may include GST. In following sections of the disclosure, the phase change or other memory material is often referred to as GST, and it will be understood that other types of phase change materials can be used. A material useful for implementation of a memory cell as described herein is Ge2Sb2Te5.
A memory cell device 66 as described herein is readily manufacturable using standard lithography and thin film deposition technologies, without requiring extraordinary steps to form sub-lithographic patterns, while achieving very small dimensions for the region of the cell that actually changes resistivity during programming. In embodiments of the invention, the memory material may be a programmable resistive material, typically a phase change material, such as Ge2Sb2Te5 or other materials described below. The region in the memory element 84 that changes phase is small; and accordingly, the magnitude of the reset current required for changing the phase is very small.
Embodiments of memory cell device 66 include phase change based memory materials, including chalcogenide based materials and other materials, for memory element 84. Chalcogens include any of the four elements oxygen (O), sulfur (S), selenium (Se), and tellurium (Te), forming part of group VI of the periodic table. Chalcogenides comprise compounds of a chalcogen with a more electropositive element or radical. Chalcogenide alloys comprise combinations of chalcogenides with other materials such as transition metals. A chalcogenide alloy usually contains one or more elements from column six of the periodic table of elements, such as germanium (Ge) and tin (Sn). Often, chalcogenide alloys include combinations including one or more of antimony (Sb), gallium (Ga), indium (In), and silver (Ag). Many phase change based memory materials have been described in technical literature, including alloys of: Ga/Sb, In/Sb, In/Se, Sb/Te, Ge/Te, Ge/Sb/Te, In/Sb/Te, Ga/Se/Te, Sn/Sb/Te, In/Sb/Ge, Ag/In/Sb/Te, Ge/Sn/Sb/Te, Ge/Sb/Se/Te and Te/Ge/Sb/S. In the family of Ge/Sb/Te alloys, a wide range of alloy compositions may be workable. The compositions can be characterized as TeaGebSb100-(a+b), where a and b represent atomic percentages that total 100% of the atoms of the constituent elements. One researcher has described the most useful alloys as having an average concentration of Te in the deposited materials well below 70%, typically below about 60% and ranged in general from as low as about 23% up to about 58% Te and most preferably about 48% to 58% Te. Concentrations of Ge were above about 5% and ranged from a low of about 8% to about 30% average in the material, remaining generally below 50%. Most preferably, concentrations of Ge ranged from about 8% to about 40%. The remainder of the principal constituent elements in this composition was Sb. (Ovshinsky '112 patent, cols 10-11.) Particular alloys evaluated by another researcher include Ge2Sb2Te5, GeSb2Te4 and GeSb4Te7. (Noboru Yamada, “Potential of Ge-Sb-Te Phase-Change Optical Disks for High-Data-Rate Recording”, SPIE v.3109, pp. 28-37 (1997).) More generally, a transition metal such as chromium (Cr), iron (Fe), nickel (Ni), niobium (Nb), palladium (Pd), platinum (Pt) and mixtures or alloys thereof may be combined with Ge/Sb/Te to form a phase change alloy that has programmable resistive properties. Specific examples of memory materials that may be useful are given in Ovshinsky '112 at columns 11-13, which examples are hereby incorporated by reference.
Phase change materials are capable of being switched between a first structural state in which the material is in a generally amorphous solid phase, and a second structural state in which the material is in a generally crystalline solid phase in its local order in the active channel region of the cell. These phase change materials are at least bistable. The term amorphous is used to refer to a relatively less ordered structure, more disordered than a single crystal, which has the detectable characteristics such as higher electrical resistivity than the crystalline phase. The term crystalline is used to refer to a relatively more ordered structure, more ordered than in an amorphous structure, which has detectable characteristics such as lower electrical resistivity than the amorphous phase. Typically, phase change materials may be electrically switched between different detectable states of local order across the spectrum between completely amorphous and completely crystalline states. Other material characteristics affected by the change between amorphous and crystalline phases include atomic order, free electron density and activation energy. The material may be switched either into different solid phases or into mixtures of two or more solid phases, providing a gray scale between completely amorphous and completely crystalline states. The electrical properties in the material may vary accordingly.
Phase change materials can be changed from one phase state to another by application of electrical pulses. It has been observed that a shorter, higher amplitude pulse tends to change the phase change material to a generally amorphous state, and is referred to as a reset pulse. A longer, lower amplitude pulse tends to change the phase change material to a generally crystalline state, and is referred to as a program pulse. The energy in a shorter, higher amplitude pulse is high enough to allow for bonds of the crystalline structure to be broken and short enough to prevent the atoms from realigning into a crystalline state. Appropriate profiles for pulses can be determined empirically, without undue experimentation, specifically adapted to a particular phase change material and device structure.
The following are short summaries describing four types of resistive memory materials.
1. Chalcogenide Material
2. CMR (colossal magneto resistance) material
3. 2-element compound
4. Polymer Material
An exemplary method for forming chalcogenide material uses the PVD-sputtering or magnetron-sputtering method with source gas(es) of Ar, N2, and/or He, etc. at the pressure of 1 mTorr˜100 mTorr. The deposition is usually done at room temperature. A collimator with an aspect ratio of 1˜5 can be used to improve the fill-in performance. To improve the fill-in performance, a DC bias of several tens of volts to several hundreds of volts is also used. On the other hand, the combination of DC bias and the collimator can be used simultaneously.
A post-deposition annealing treatment in vacuum or in an N2 ambient is optionally performed to improve the crystallize state of chalcogenide material. The annealing temperature typically ranges from 100° C. to 400° C. with an anneal time of less than 30 minutes.
For additional information on the manufacture, component materials, use and operation of phase change random access memory devices, see U.S. patent application Ser. No. 11/155,067, filed 17 Jun. 2005, entitled Thin Film Fuse Phase Change Ram And Manufacturing Method, Attorney Docket No. MXIC 1621-1.
Is preferred that all or part of the portions of elements 80, 82 contacting memory element 84 comprise an electrode material, such as TiN, or another conductor selected for compatibility with the phase change material of memory element 84. Other electrical contact enhancement materials such as TaAlN, WAlN or TiAlN may also be used. In the embodiment of
One of the advantages of the invention over conventional techniques is that there is no need to open a via to connect to a pillar-type memory element or to try to connect a pillar-type of memory element to a line. The use of crossing line patterns, trimmed to sublithographic dimensions, creates a pillar-type memory element. The pillar-type memory element has sublithographic dimensions in two, typically perpendicular, directions. Line width control is generally better than hole diameter control using conventional lithographic techniques. This results in better memory element size control for the process. It also helps prevent potential damage to the memory element. The line pattern techniques used to create the pillar-type memory element are much easier to create and control than conventional techniques and result in much better dimension control.
The above descriptions may have used terms such as above, below, top, bottom, over, under, et cetera. These terms are used to aid understanding of the invention are not used in a limiting sense.
While the present invention is disclosed by reference to the preferred embodiments and examples detailed above, it is to be understood that these examples are intended in an illustrative rather than in a limiting sense. It is contemplated that modifications and combinations will occur to those skilled in the art, which modifications and combinations will be within the spirit of the invention and the scope of the following claims.
Any and all patents, patent applications and printed publications referred to above are hereby incorporated by reference.
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US20150041988 *||Aug 8, 2013||Feb 12, 2015||Invensas Corporation||Ultra high performance interposer|
|U.S. Classification||257/2, 438/102, 257/E47.001, 257/E21.068|
|International Classification||H01L47/00, H01L21/06|
|Cooperative Classification||H01L45/04, H01L45/146, H01L45/1233, H01L27/2436, H01L45/14, H01L45/06, H01L45/144, H01L45/1675, H01L45/147, H01L45/1625|
|European Classification||H01L45/04, H01L27/24|
|Oct 22, 2007||AS||Assignment|
Owner name: MACRONIX INTERNATIONAL CO., LTD., TAIWAN
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LUNG, HSIANG LAN;REEL/FRAME:019993/0429
Effective date: 20071019
|May 28, 2014||FPAY||Fee payment|
Year of fee payment: 4