|Publication number||US20100132887 A2|
|Application number||US 12/435,545|
|Publication date||Jun 3, 2010|
|Filing date||May 5, 2009|
|Priority date||Dec 8, 2005|
|Also published as||US7883839, US8030620, US20070131646, US20090283215|
|Publication number||12435545, 435545, US 2010/0132887 A2, US 2010/132887 A2, US 20100132887 A2, US 20100132887A2, US 2010132887 A2, US 2010132887A2, US-A2-20100132887, US-A2-2010132887, US2010/0132887A2, US2010/132887A2, US20100132887 A2, US20100132887A2, US2010132887 A2, US2010132887A2|
|Inventors||Vincent Donnelly, Demetre Economou, Paul Ruchhoeft, Lin Xu, Sri Vemula, Manish Jain|
|Original Assignee||University Of Houston|
|Export Citation||BiBTeX, EndNote, RefMan|
|Referenced by (2), Classifications (10), Legal Events (2)|
|External Links: USPTO, USPTO Assignment, Espacenet|
This application is a divisional application of U.S. patent application Ser. No. 11/633,233, filed on Dec. 4, 2006, which claims priority to U.S. Provisional Pat. App. No. 60/748,541, filed on Dec. 8, 2005. U.S. patent application Ser. No. 11/633,233 and U.S. Provisional Pat. App. No. 60/748,541 are incorporated herein by reference in their entirety.
This invention was made with government support under University of Houston account number 5-51-956 awarded by the National Science Foundation.
This invention pertains to a method and apparatus for forming nano-patterns and nano-features, and more specifically, to a system and method for massively parallel replication of 2-D or 3-D nanometer-sized patterns of a wide variety of materials over a large area.
Current focused ion beam techniques are capable of writing nanometer-sized features but are very slow. Existing methods for making small features consist of lithographically defining polymeric resist materials and then transferring the developed pattern into the desired underlying film or substrate by plasma etching.
State-of-the-art immersion lithography can produce features as small as 45 nm, but is complex and costly. Ion beam or electron beam proximity or projection lithography methods are capable of much finer resolution (e.g., features sized in the tens of nm), but require expensive and fragile masks. Some of the finest features may be made by electron beam writing into resist. While this method is very good for prototype devices, it is not practical for large-scale fabrication and production because the writing speed is much too slow to cover a several square centimeters chip size area in a reasonable time.
Another approach to making devices with nanometer sized features is to use self-assembled monolayers (SAMs). SAMs with micron sized feature can be delineated by lithography or stamping; while complex patterns with nanometer-size features can be fabricated with block copolymers. Unfortunately, SAMs are limited in terms of possible patterns and materials and are therefore unsuitable for large scale nanofabrication.
It is therefore desirable to circumvent the aforementioned limitations and provide a method of fabricating 2-D or 3-D shape patterns in a wide variety of materials over large areas. It is a further object of the present invention to provide a method that is largely unaffected by vibrations, thermal expansion and other alignment problems that usually plague other nanofabrication methods.
The present invention utilizes nano-pantography to provide high-throughput, versatile, and large scale fabrication of nanometer-sized complex patterns over large surface areas by simultaneously focusing a broad ion beam with micro-electrostatic lenses on the substrate. When the wafer is tilted off normal (with respect to the ion beam axis), the focal point is laterally displaced, allowing the focused beams to be rastered, thus forming a desired pattern. The desired pattern can be replicated simultaneously in potentially millions of spots over tens of square centimeters.
A method is provided for creating a plurality of substantially uniform nanometer-sized features in a substantially parallel manner in which an array of micro-lenses is positioned on a surface of a substrate, where each micro-lens includes a hole such that the bottom of the hole corresponds to a portion of the surface of the substrate. A flux of charged particles, e.g., a beam of positive ions of a selected element, is applied to the micro-lens array. The flux of charged particles is focused at selected focal points on the substrate surface at the bottoms of the holes of the micro-lens array. The substrate is tilted at one or more selected angles to displace the locations of the focal points across the substrate surface in accordance with the feature to be mass produced. By depositing material or etching the surface of the substrate at the focal points as they move across the substrate surface in a substantially parallel fashion, several substantially uniform nanometer sized features may be created on the surface of the substrate in a substantially parallel manner.
The present invention relates to a method for simultaneously forming several two or three dimensional and identical nanometer-sized features of a wide variety of materials over a large area. For the purpose of this disclosure, the term nanometer-sized features means nano-scale features, e.g., features smaller than approximately 1 micron and at least approximately 1 nm. In certain applications, the present invention may be used to simultaneously form millions of identical nanometer-sized patterns. In an exemplary embodiment of the invention, nano-pantography can be used to etch patterns as well as to deposit patterned films at the nanometer scale with as much as a 100-fold reduction relative to the lens size. Certain exemplary embodiments of the nano-pantography method and system disclosed herein are generally capable of pattern resolutions of about 10 nanometers (nm). The nano-pantography method and system disclosed herein may be generally capable of rapidly providing mass produced nano-patterning over a relatively large area such that the smallest lateral dimension of a feature may be as small as approximately 1 nm.
General Principles of Nano-Pantography
As used herein, pantography refers to the reproduction of a model into identical copies of either larger or smaller sizes. The present invention is a method and apparatus for applying the general principles of pantography to nanometer sized patterns.
The fountain pen 110 in
An example of the results of nano-pantography is illustrated in
Examples of Nano-Pantography for Massive Nano-Patterning Over Large Areas
Nano-pantography allows versatile fabrication of nanometer scale pre-selected patterns over large areas. Standard photolithography, thin film deposition, and etching may be used to fabricate arrays of ion-focusing micro-lenses (e.g., small round holes through a metal/insulator structure) on a substrate, such as a silicon wafer, for example. When the substrate is tilted off normal with respect to the ion beam axis, the focal points in each hole are laterally displaced, allowing the focused beamlets to be rastered across the hole bottoms. In the nano-pantography process, the desired pattern is replicated simultaneously in many closely spaced holes over an area limited only by the size of the broad-area ion beam. With the proper choice of ions and downstream gaseous ambient, the method can be used to deposit or etch materials.
For example, the simultaneous impingement of an Ar+ beam and a Cl2 effusive beam on an array of 950 nm diameter lenses can be used to etch 10 nm diameter features into a Si substrate, which corresponds to a reduction by a factor of approximately 95 times relative to the lens size. The focused “beamlet” diameters scale directly with lens diameter. Thus a minimum feature size of ˜1 nm should be possible with 90 nm diameter lenses. This resolution capability generally exceeds conventional photo-lithography techniques. The system and method of the present invention is suitable for overcoming one of the main obstacles in practical nano-scale fabrication: providing rapid, large-scale fabrication of virtually any shape and material nanostructures. Because ion focusing optics may be built on the substrate itself, the nano-pantography system and method of the present invention is a self aligned method that is substantially unaffected by vibrations, thermal expansion, and other alignment problems that usually plague other standard nanofabrication methods.
At step 270, the substrate is tilted at desired angles to allow for parallel writing of multiple nanometer-sized patterns at substantially the same time. This embodiment of the invention is able to form multiple simultaneous nanometer-sized patterns, because, in part, the focal point of the ion beam is displaced when the ion beam axis is moved off normal with respect to the substrate. The line normal to the substrate intersects an imaginary horizontal plane at a selected distance from the substrate, e.g., a distance of about one meter from the substrate. As the wafer is tilted, the normal traces a pattern on the imaginary plane. Any pattern could be replicated by the ions that focus at the bottom of the holes, with a reduction by a factor of about 106. In this manner, any desired pattern may be replicated by tilting the wafer at chosen angles and rastering the beam over the bottom of the holes, as shown at step 280. As a result, predetermined patterns can be formed simultaneously at the bottom of a large number of holes.
Given the flexibility of the present process of nano-pantography, a large number of nanometer-sized features may be produced on the substrate. For example, these features may range from simple patterns, such as nanodots, to complex formations including, but not limited to, nanowires, nanotubes, nanodevices and nanocircuits. Moreover, the present process of nano-pantography allows the user to select a wide variety of materials for the substrate and the nanometer-sized features. In addition, the method and system disclosed herein may be generally capable of rapidly providing mass produced nanometer sized features over a relatively large area such that the smallest lateral dimension of a feature may range in size from approximately 1 nm to approximately 50 nm.
The dead space between lenses is also available for large scale circuitry, which may be formed by conventional lithographic methods, to address and control discrete nano-devices or nano-circuits inside the holes. This is shown at step 290. In addition, because the lenses are mounted on the wafer, there is no need for the critical alignment and vibration control that is required for the alternative approach of projection of multiple focused ion beams onto a scanned substrate.
The exemplary embodiment illustrated in
Furthermore, the process may utilize ions of any material suitable for etching, such as, for example, argon. Similarly, the process may use any gas suitable for etching the substrate. Although ion beams are discussed in the previous exemplary embodiment, the system and method of the present invention may utilize any flux of charged particles. Other exemplary embodiments may utilize electrons, similar to the process of e-beam assisted deposition.
In addition, depending on the desired application, exemplary embodiments of the present process may utilize simultaneous or sequential deposition of multiple metals of controlled composition. Other exemplary embodiments may utilize small metal catalyst particles, such as nickel, to grow orderly arrays of precisely positioned carbon nanotubes, for example. The process may also allow for alternating between different gasses, ions, and/or precursors to form multilayer structures. In other exemplary embodiments, the focused deposition could be followed by an unfocused “etch back” process to clear footers and other thinner imperfections around deposits and improve resolution.
One exemplary embodiments may sequentially combine the etching and depositions steps. For example, nano-holes could be etched into a substrate and then without removing the substrate from the processing chamber, the etching gas could be turned off and power could be supplied to a target electrode to focus a deposit into the holes in a self-aligned manner. In another exemplary embodiment, the size of nano deposits with Gaussian-shaped profiles may be reduced. This reduction may be accomplished by an etch-back step with an unfocussed or focused ion beam. The etch-back step may be performed in the presence of a gas that would selectively etch the nano-deposit and not the substrate. This step may remove the edges of the deposits and thus reduce their size. In another exemplary embodiment, a nano-deposited pattern could be transferred to an underlying substrate by conventional plasma etching or by broad, unfocussed ion beam-assisted etching in the presence of an appropriate gas, such as chlorine for silicon etching, for example.
Example of Fabrication and Use of Micro-Electrostatic Lenses
The ability to focus ions into the bottom of the cylindrical holes or trenches from parallel “beamlets” of a collimated, broad area ion beam is useful in carrying out the above-discussed exemplary embodiment of nano-pantography. The beamlets are comprised of the ions that enter the tops of the holes. Each hole of the array acts as a micro lens, similar (except for their small size) to electrostatic lenses used in ion focused beams or mass spectrometers. The array can take any desired pattern and thus replicate any desired patterns. Each lens contains on average only 10−5 ions. Therefore the possibility of two ions occupying a lens at the same time and repelling each other is extremely remote.
The following is an example of fabricating an array of lenses. Standard photolithography, thin film deposition, and etching methods may be used to fabricate arrays of ion-focusing micro-lenses (e.g. small round holes through a metal/insulator structure) on a substrate such as a silicon wafer. An array consists of small holes that can be arranged in any desired pattern. The micro-lens arrays may consist of circular openings in a chromium and SiO2 stack on a p-type, B-doped (5-25 Ω-cm) Si substrate. The silicon is subjected to standard thermal oxidation to grow a device-quality SiO2 film with a thickness of 1000 nm. A 50 nm Cr layer is deposited by electron beam evaporation, and a 200 nm thick layer of 950 kg/mol poly(methyl methacrylate) (PMMA) is spin-coated onto the chromium layer and baked at 180° C. for 1 hour.
A periodic array of circular patterns is printed using ion beam aperture array lithography. In this process, a stencil mask, containing an array of circular openings in a thin membrane, is placed in a broad beam of energetic (30 keV) helium ions. The ions are either stopped in the opaque regions of the mask or pass through the openings to form an array of ion beamlets. The beamlets are scanned across the wafer surface to expose circles of arbitrary size in the PMMA in a massively parallel fashion. The stencil mask consists of a 0.5 μm thick silicon nitride membrane with 400 nm diameter circular openings and was used to define lens structures with diameters varying from 700 to 1100 nm. The PMMA is developed in a 1:1 solution of isopropyl alcohol (IPA):methyl-isobutylketone (MIBK), rinsed in IPA, and blown dry in nitrogen. The PMMA patterns are transferred into the underlying chromium layer using a standard wet etchant (CE-8002-A, Transene Company, Inc.) maintained at 35° C. The Cr patterns act as a mask for the reactive ion etching of SiO2 using 0.7 mTorr CHF3 at 85 W. The samples are then wet-etched in a 12.5% HF solution and rinsed in DI water to remove the native oxide on the Si and to undercut the SiO2 in an effort to minimize the possibility of sidewall charging. Electrical contacts are made to the Cr layer and Si substrate. At a bias of 150V on the Cr, the leakage current is typically <0.01 mA.
Example of Ion Trajectory Simulation Results
As discussed above, during the nano-pantography process, the ions are deflected by the spatially varying potentials, and with the proper conditions come to a focus at the bottom of the hole. To obtain the best focus, ion trajectory simulations may be performed to optimize the focal characteristics of the lens.
Ions with a kinetic energy Ei pass through the grounded grid as they exit the source plasma and travel a total distance l where they encounter a metal electrode 340 at a potential Vm, with a thickness lm and having a through-hole of diameter dm. Ions with proper trajectories to pass through this hole then pass through a hole with a diameter dd in a dielectric material 350 of thickness ld. The dimensions of the hole 365 may be accordingly defined by both dd and dm. To eliminate the possibility of charging due to ions that may strike the wall, dd can be made >dm.
The following example describes a lens with lm=50 nm thick metal 340 resting on top of ld=1000 nm thick insulator (silicon dioxide) 350 on a silicon substrate 360. The hole diameter is dm=dd=950 nm. The potential of the metal, Vm, is the control variable, while the substrate 360 is at the reference potential (VS is approximately 100 V). The volumetric charge density in the region around a single lens 365 is negligibly small. Thus, the 2-dimensional Laplace equation is used to determine the potential and electric field profiles in the domain. A uniform flux of ions is launched at the entrance plane with the measured ion energy distribution. Using the electric profile, the 3-dimensional trajectory of each ion is computed by integrating Newton's equation of motion with a leap-frog method. Integration continues until ions strike a surface.
The lens structure may incorporate additional features beyond those shown in the exemplary embodiment depicted in
Example of Writing with Ion Beamlets
The following example describes a lithographically defined Cr/SiO2/Si lens array with 700 to 1100 nm diameter holes exposed to a 200 eV or 100 eV Ar+ and a Cl2 effusive beam with an estimated Cl2:Ar+ flux ratio of 200:1. Under these conditions, Si may etch at a rate of 1.3 Si atoms per Ar+ at E=200 eV and 0.7 Si atoms per Ar+ at E=100 eV. The sputtering rate in the absence of Cl2 is typically much slower (0.3 and 0.1 Si atoms per Ar+ at E=200 and 100 eV, respectively). Spontaneous etching of Si by Cl2 is typically very slow at room temperature. Hence, etching generally only occurs at the focal points of the Ar+ beamlets.
Example of a Nano-Pantography System
Ions are extracted through an extraction grid 635 at the bottom of the plasma chamber 630. The plasma is pulsed “on” and “off”, preferably with a frequency of 5 kHZ and a 50% duty cycle. After plasma relaxation, a positive, constant voltage is applied to a beam acceleration ring 645 that surrounds the plasma region. The acceleration ring is preferably a 4.4″ diameter, 0.3″ high ring electrode. The plasma potential shifts to this applied voltage, allowing precise control over the ion beam energy. The extracted ion beam is filtered with a second grid 655, e.g., a rejection grid, located downstream that is pulsed positive to reject the beam extracted during the plasma “on” periods and pulled to ground to pass the nearly mono-energetic collimated beam extracted during the plasma “off” periods. In this exemplary embodiment of the present invention, a beam of Ar+ ions (or inert gas ions) is utilized. As discussed above, however, any appropriate flux of charged particles may be used, based on the particular application or materials selected.
The sample 660 is exposed to the ion beam in a separate chamber 650. Chamber 650 is preferably 30″ downstream from the extraction grid 635 of the plasma source. Micro-lens array voltage source 665 provides voltage to the lens array. For this particular exemplary embodiment, beam 670 preferably provides a Cl2 effusive beam to impinge on the lens array to assist in etching the substrate. As discussed above, any appropriate gas may be used in the etching process, based on the particular application or materials selected. A drift region 640 is preferably included to reduce the angular spread of the ion beamlets that enter the micro-lens. The region 640 may also reduce the flux of neutrals, such as uncharged nickel atoms, for example, into the lens openings. Such uncharged species could deposit across most of the lens bottoms instead of predominantly at the focal points. The pressure in drift region 640 is lowered with appropriate vacuum pumps 642 to reduce the gas number density, such as only a small fraction of the ions collide with the background gas.
In this deposition mode, both the Ni internal coil 710 and Ni target 720 are sputtered by Ar+ to produce Ni atoms, a fraction of which become ionized. The SEM and atomic force microscopy (AFM) images of the Ni deposits are illustrated in
In one example of creating double lens structure 1000, a p-type highly doped silicon substrate (substrate 1010) may be covered by a 100 um thick plastic film (spacer 1015) containing a 0.5 cm hole (aperture 1035). This sheet may be covered with a metal grid (grid 1020) with an array of 150 μm holes in it (array of holes 145). A second 100 μm thick plastic film (spacer 1025) with a 0.5 cm hole (aperture 1040) may be placed over the grid (grid 1020) and aligned with the 0.5 cm hole on the first plastic film (aperture 1035). A second metal grid (grid 1030) with the same size hole and hole pattern (array of holes 150) as the bottom grid (grid 1020) may be positioned on the top of the second spacer (spacer 1025) and the micro-holes in this grid (array of holes 150) may be aligned with counterparts in the first grid (array of holes 145) under an optical microscope. This assembly may be placed into a vacuum chamber with a pressure of 4×10−5 torr and a 200 eV Ni ion beam extracted from a Ni+-containing plasma may be directed at the assembly. The voltages on the substrate, first grid and second grid may be set at 180 V, 190.4 V and 150 V respectively. After 3 hours of processing, both the grids and the plastic spacers may be removed. SEM measurements may be subsequently taken on the bare silicon substrate to evaluate the results. The results of this example are shown in
The present nano-pantography process has been described for creating nanodots and etching patterns on the surface of a substrate, and it will be apparent to one skilled in the relevant arts that the system and method of the present invention allows for the creation of complex formations including, but not limited to nanowires, nanotubes, nanodevices and nanocircuits. Furthermore, the available surface area of the micro-lens array may be utilized to incorporate larger scale circuitry to address and control the formations, such as nanodevices and nanocircuits, created within the holes of the micro-lens array.
Although the foregoing invention has been described in detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications may be practiced within the scope of the appended claims. It should be noted that there are many alternative ways of implementing both the process and apparatus of the present invention. Accordingly, the present embodiments are to be considered as illustrative and not restrictive, and the invention is not to be limited to the details given herein, but may be modified within the scope and equivalents of the appended claims.
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|US8987016||Aug 16, 2011||Mar 24, 2015||Rensselaer Polytechnic Institute||Efficient and directed nano-light emitting diode, and method for making same|
|WO2012024299A1 *||Aug 16, 2011||Feb 23, 2012||Rensselaer Polytechnic Institute||Efficient and directed nano-light emitting diode, and method for making same|
|U.S. Classification||156/345.24, 118/708, 118/621, 156/345.3|
|International Classification||B05C5/02, C23F1/08|
|Cooperative Classification||B82Y30/00, B29D11/00365|
|European Classification||B82Y30/00, B29D11/00C9|
|Aug 29, 2011||AS||Assignment|
Owner name: UNIVERSITY OF HOUSTON, TEXAS
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:DONNELLY, VINCENT M.;ECONOMOU, DEMETRE J.;RUCHHOEFT, PAUL;AND OTHERS;SIGNING DATES FROM 20070205 TO 20070214;REEL/FRAME:026821/0488
|Apr 6, 2015||FPAY||Fee payment|
Year of fee payment: 4