US 20100140663 A1
In an AlGaN channel transistor formed on a <100> orientation silicon wafer, a hole with walls slanted at 54 degrees is etched into the silicon to provide a <111> orientation substrate surface for forming the AlGaN channel transistor.
1. A high electron mobility transistor (HEMT) that includes a channel region made from a high carrier mobility material, wherein the high carrier mobility material has a higher carrier mobility than silicon, comprising
a <100> orientation silicon wafer material that is processed to support the high carrier mobility channel region.
2. A HEMT of
3. A HEMT of
4. A HEMT of
5. A HEMT of
6. A HEMT of
7. A HEMT of
8. A HEMT of
9. A HEMT of
10. A HEMT of
11. A HEMT of
12. A HEMT of
13. A HEMT of
14. A HEMT of
15. A HEMT of
16. A method of making a high electron mobility transistor (HEMT), comprising
using a <100> orientation substrate to define a semiconductor structure and defining at least one <111> orientation surface in the structure for supporting a channel region of a HEMT.
17. A method of
18. A method of
19. A method of
20. A method of
The invention relates to high voltage transistors. In particular it relates to transistors making use of channel material that has improved carrier mobility and a wider bandgap than silicon, so-called high electron mobility transistors (HEMT).
Materials such as GaN provide improved carrier mobility and have a wider band gap than silicon. Therefore the use of GaN as a channel material in the fabrication of transistors has been found to provide transistors with a lower drain-source resistance Rdson. Also, due to the wider band gap the impact ionization is reduced causing the channel breakdown to be much higher. As a result transistors with higher voltage capability can be fabricated or the area of the transistor can be reduced for a given voltage resulting in lower capacitive losses. This allows GaN devices to be run at higher frequencies than silicon transistors of comparable power.
The problem with the use of GaN as a channel material is that to date, defect free, useful epitaxial deposition of GaN is achievable only on <111> orientation silicon substrate material, while CMOS is typically processed on <100> orientation wafers. This places practical constraints on using GaN in conjunction with CMOS processing.
The present application seeks to address this problem.
According to the invention there is provided a
According to the invention, holes are formed, e.g. by etching, in <100> orientation silicon to provide a pit or hole with side-walls angled to define at least one surface with <111> orientation. This allows the fabrication of a channel made of high mobility, wide bandgap material such as GaN on the <111> orientation surface. In particular, in the case of GaN, pits with 54.74 degree sidewall orientation relative to the vertical plane are etched using a wet etch such as KOH/water/ethanol or using TMAH etch.
Another aspect of the invention is to address the drain source resistance Rdson. High voltage applications often make use of power arrays, however as the array increases in size more of the Rdson is dictated by the metal than by the channel resistance. The present invention addresses this problem by making use of a thick copper back-end in one embodiment, as is discussed in greater detail below.
In order to better understand the present invention, it is useful to consider the structure of a typical prior art high electron mobility transistor (HEMT) formed on <111> orientation silicon.
The next step in the fabrication involves the removal of the remaining resist 222 and the growing of an epitaxial layer 226, as shown in
The resist 230 is then removed as shown in
At this point the hole 202 is etched by depositing and patterning a resist layer 240. As shown in
The sidewalls of the hole 202 are angled to provide two surfaces with <111> orientation allowing the growth of a GaN layer 250 and an AlGaN layer 252 on the two sidewalls to define a GaN/AlGaN stack 250 on each of the surfaces as shown in
As shown in
Instead of establishing the drain contact from the top using a sinker to connect with the n+ drain 224 as shown in
The present invention thus opens the door to fabricating high voltage transistors with channels made from an increased mobility, wide band gap channel material such as GaN, which is useful for main voltage (110V) applications allowing them to be tied to the grid. One application is for the fabrication of grid-tie inverters on a chip, to reduce the cost and versatility of photo-voltaic (PV) energy production.
While the invention was described with respect to a few particular embodiments, it will be appreciated that the exact nature of the structures may vary without departing from the invention as defined by the claims.