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Publication numberUS2626985 A
Publication typeGrant
Publication dateJan 27, 1953
Filing dateAug 25, 1948
Priority dateAug 25, 1948
Publication numberUS 2626985 A, US 2626985A, US-A-2626985, US2626985 A, US2626985A
InventorsGates Paul E
Original AssigneeSylvania Electric Prod
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
Electrical crystal unit
US 2626985 A
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Description  (OCR text may contain errors)

Jan. 27, 1953 P. E. GATES 2,626,985

ELECTRICAL cnvsm. UNIT Filed Aug. 25. 1948 IN V EN TOR.

Pgu/E Gczfza ATTORNEY Patented Jan 27, 1953 UNITED STATES PATENT OFFICE 2,626,985 ELECTRICAL CRYSTAL UNIT Paul E. Gates, Danvers, Mass., assignor to Sylvania Electric Products Inc., Salem, Mass, a corporation of Massachusetts Application August 25, 1948, Serial No. 46,145

2 Claims. 1

This invention relates to semi-conductor crystal units and the like, for example crystal rectifiers, amplifiers, oscillators and similar devices. The present application discloses features also disclosed in co-pending application Serial No. 50,637, filed September 22, 1948 by Ralph B. Collins, Jr., and in a continuation thereof, Serial No. 74,768, filed February 5, 1949, assigned to the owner of this application. The present application also discloses a construction generically claimed in my copending application, Serial No. 80,358, filed March 9, 1949.

An object of the invention is the achievement of a small, compact, inexpensive crystal unit of improved electrical characteristics.

A feature of the invention is the enclosure of the crystal in a glass tube sealed at its ends by metal contact pieces extending therethrough.

Other features, objects and advantages of the invention will be apparent from the following specification taken in conjunction with the attached drawings in which:

Fig. 1 is a sectional profile of a device being made according to the invention.

Fig. 2 is a profile section of a completed device according to the invention; and

Fig. 3 is a profile section of another embodiment of the invention.

In Figs. 1 and 2 the crystal of a semi-conductor material such as germanium or silicon, together with suitable impurities such as tin or aluminum, respectively, for example, and having a flat surface 2, is soldered or otherwise affixed at its other surface to the metal-wire or pin 3. A catwhisker point-contact element 4, for example as shown in the copending application Serial No. 492,163 of E. T. Casellini, is in contact with the crystal surface 2, and is attached to the wire 5, sealed through the cuplike glass pins 6, which is in overlapping contact with the similar glass piece 1 over which it fits, and through which wire 3 is sealed. The wires 3 and 5, respectively are gripped in chucks 9 and 8, outside the glass envelope formed by glass pieces 6 and I. These chucks 8, 9 may be adjusted laterally, in the manner usual in lathes and the like for example, until the pressure on the contact between the wire and crystal has its proper value, and the chucks may be capable of motion in other directions, if desired, to permit the catwhisker 4 to be moved over the crystal until a satisfactory contact point is found. Heat may then be applied to the overlapping portions III, M of the glass pieces 6, 1, to seal them together. The resultant is shown in Fig. 2. The

2 envelopes 6, I need not be evacuated. A filling of ordinary air at atmospheric pressure is generally satisfactory, although other fillings may be used if desired.

Fig. 3 shows a further embodiment of the invention, in which the glass tube or cup 6 sealed to the wire 5 carrying catwhisker point-contact element 4 is made longer, extending beyond the crystal l, which is now soldered or otherwise affixed to a metal pin l2 which has a threaded or knurled portion I 3 to facilitate handling. Pin I2 is fixed to the metal diaphragm l4, which in turn is fixed to a metal sleeve I5, for example by being set in a groove I6 as shown. Sleeve, fitting or bushing 15 has the outwardly extending flange ll, sealed to the glass tube 6 at the otherwise open end of the latter. The pin I2 is set into the diaphragm l4 until the tension in catwhisker is about correct, and then the pin l2 and diaphragm l4 may be manipulated until a good contact point is found on the crystal. The metal end cap l8, with the pigtail connector wire 19 afiixed thereto, is attached to the metal sleeve I5, for example by solder 20.

Various departures or modifications may be made in the described embodiments without departing from the spirit of the invention. For example, more than one catwhisker contact and corresponding connecting wire may be used, if the device is intended to be employed as an amplifier. Two catwhiskers may be used side by side, if desired, as in copending application Serial No. 40,561 of S. Amico, or concentrically as in copending application Serial No. 39,665 of F. Koury.

The word glass is used in a broad sense, including fused quartz, for example. With a particular glass, the proper metals or alloys should be used to effect a seal with that glass.

What I claim is:

1. A semi-conductor translator having a pointcontact element, a semi-conductor element engaged by said point-contact element, an envelope enclosing said elements, said envelope including a glass wall portion and a metal end cap, a cylindrical metal fitting sealed to said glass wall portion, and a support extending adjustably through said fitting and carrying one of said elements within the envelope and having an engageable portion, said cap being soldered to said fitting and covering the engageable portion of said adjustable support.

2. A semi-conductor translator including an envelope having a glass wall portion and a metal end cap, a pair of translator elements in mutual contact contained within said envelope, one of said elements being a piece of semi-conductive material, a bushing sealed to said envelope having a female threaded portion within the envelope, a male threaded element adjustably secured therein and supporting said semi-conductive material inside the envelope, said metal end cap being joined to said bushing to cover said male threaded element.

- PAUL E. GATES.

REFERENCES CITED Number D. 156,501 5 756,676 962,262 2,130,309 2,154,542 2,431,139 10 2,438,110

Number UNITED STATES PATENTS Name Date Gates Dec. 20, 1949 Midgley Apr. 5, 1904 Schloemilch et a1. June 21, 1910 Nergaard Sept. 13, 1938 Swanson Apr. 18, 1939 Retherford et a1. Nov. 18, 1947 Brattain Mar. 23, 1948 FOREIGN PATENTS Country Date England May 11, 1926

Patent Citations
Cited PatentFiling datePublication dateApplicantTitle
US756676 *Nov 10, 1902Apr 5, 1904Internat Wireless Telegraph CompanyWave-responsive device.
US962262 *Apr 14, 1906Jun 21, 1910Drahtlose Telegraphie GmbhWave-detector for wireless telegraphy.
US2130309 *Sep 18, 1937Sep 13, 1938Rca CorpCurrent conductor support
US2154542 *Feb 15, 1938Apr 18, 1939Swanson HaroldElectric incandescent high pressure gas metallic vapor lamp
US2431139 *Jun 23, 1943Nov 18, 1947Westinghouse Electric CorpMagnetron
US2438110 *Jul 28, 1943Mar 23, 1948Bell Telephone Labor IncElectrical translating materials and devices and method of making them
USD156501 *Apr 5, 1949Dec 20, 1949SylCrystal diode
GB251706A * Title not available
Referenced by
Citing PatentFiling datePublication dateApplicantTitle
US2697805 *Feb 5, 1949Dec 21, 1954Sylvania Electric ProdPoint contact rectifier
US2699594 *Feb 27, 1952Jan 18, 1955Sylvania Electric ProdMethod of assembling semiconductor units
US2785349 *Jun 7, 1952Mar 12, 1957Int Standard Electric CorpElectric semi-conducting devices
US2790941 *Mar 27, 1952Apr 30, 1957Sylvania Electric ProdTerminal lead construction and method, and semiconductor unit
US2819513 *Nov 3, 1953Jan 14, 1958Stuart T MartinSemi-conductor assembly and method
US2825856 *May 29, 1953Mar 4, 1958Sylvania Electric ProdSealed semiconductor devices
US2827598 *Mar 19, 1953Mar 18, 1958Raytheon Mfg CoMethod of encasing a transistor and structure thereof
US2835853 *Dec 7, 1954May 20, 1958Philips CorpSemi-conductor electrode system
US2844769 *Nov 19, 1954Jul 22, 1958Philips CorpSemi-conductor electrode systems
US2859394 *Feb 27, 1953Nov 4, 1958Sylvania Electric ProdFabrication of semiconductor devices
US2958720 *Mar 25, 1955Nov 1, 1960Dearborn Electronic Lab Of DelCapacitor end seal
US3128529 *Jun 9, 1958Apr 14, 1964Saegertown Glasseals IncMachine for assembling electrical components
US3165812 *Sep 27, 1961Jan 19, 1965Tokyo Shibaura Electric CoMethod of manufacturing glass diodes
US6732548 *Jul 12, 2001May 11, 2004Valentine H. ReaghOrnamental glass object and method of fabrication
DE1042132B *May 7, 1954Oct 30, 1958Telefunken GmbhVerfahren zur Herstellung von Kristalloden
DE1043515B *Oct 1, 1953Nov 13, 1958Siemens AgVerfahren zur Herstellung einer in einem mit Vergussmasse ausgefuellten, vakuumdichtabgeschlossenen Gehaeuse untergebrachten Halbleiteranordnung
Classifications
U.S. Classification257/41, 257/E23.182, 65/42
International ClassificationH01L23/02, H01L23/04
Cooperative ClassificationH01L23/041
European ClassificationH01L23/04B