US3816909A - Method of making a wire memory plane - Google Patents
Method of making a wire memory plane Download PDFInfo
- Publication number
- US3816909A US3816909A US00257905A US25790572A US3816909A US 3816909 A US3816909 A US 3816909A US 00257905 A US00257905 A US 00257905A US 25790572 A US25790572 A US 25790572A US 3816909 A US3816909 A US 3816909A
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- conductive layer
- magnetic permeability
- high magnetic
- electrically conductive
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/08—Arrangements for interconnecting storage elements electrically, e.g. by wiring for interconnecting magnetic elements, e.g. toroidal cores
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49069—Data storage inductor or core
Definitions
- This invention relates to a wire memory plane having a high output and a high memory density and a method of making the same.
- a wire memory plane is a magnetic memory device, in which a wire plated with a uniaxial-anisotrophy permalloy (hereinafter referred to as plated wire) is used for a digit wire and a word line is crossed perpendicularly thereover to form a matrix.
- plated wire a wire plated with a uniaxial-anisotrophy permalloy
- a magnetic flux keeper is used to enhance the efficiency of the word current magnetic field, reduce the disturbance by the adjacent memory and to obtain high memory density.
- a magnetic field indicated by a word current on the plated wire forms an open magnetic path.
- it is difficult toconcentrate the magnetic field due to the influence of the reducing magnetic field.
- most of the magnetomotive force for driving is consumed by the space in the magnetic path and only a small part is given to the plated wires of the memory element.
- a magnetic flux keeper is employed in which the space in the magnetic path is filled with a material of high permeability (for example, ferrite, permalloy etc.) to focus the magnetic field and to reduce the magnetomotive force for driving.
- a material of high permeability for example, ferrite, permalloy etc.
- FIG. 1 shows a matrix structure which is formed by sticking a group of word strips 2 (hereinafter referred to as a word sheet) made by etching a flexible copper film around an insulating sheet 1 (hereafter referred to as a tunnel sheet) comprising a hole into which a plated wire may be inserted.
- a word sheet a group of word strips 2
- a tunnel sheet a tunnel sheet
- the keeper comprises the structure, wherein sheets of high magnetic permeability material 3 are folded about the word sheet 2.
- Reference numeral 4 indicates an insulating sheet.
- the magnetic path Since a gap corresponding to the thickness of the word strip and the insulating layer is present between the plated wire and the keeper in this structure, the magnetic path has a large magnetic resistance against a driving magnetic force, and the effective driving magnetic force increases only by about 20 percent when a keeper is used compared with the case where a keeper is not used.
- FIG. 2 also shows a device in which a magnetic plated wire is used for a memory element.
- Reference numeral 5 indicates a conductor substrate
- 6 indicates a continuous foil keeper
- 7 indicates an insulating film
- 8 a magnetic plated wire
- 9 a word strip
- 10 a side keeper.
- a continuous permalloy foil keeper is provided at the outside and a side keeper is provided at the center of the word strip.
- This device has a better efficiency than the one shown in FIG. 1 because a side keeper is added.
- such a structure is hard to make, the distance between word strips becomes larger because of the presence of a side keeper, and thus it is 5 impossible to enhance the memory density.
- FIG. 3 shows a device, in which a word wire 12 except the part contacting a plated wire 11 is completely surrounded by a keeper 13. This device is the most effcient one, but it is difiicult to make a plane having such a structure.
- FIG. 1 shows a sectional diagram of a conventional wire memory plane
- FIG. 2 shows a sectional diagram of another conventional wire memory plane
- FIG. 3 is a partial perspective view of a further example of a conventional wire memory plane
- FIGS. 4 and 5 are sectional diagrams showing a method of making a word strip according to one embodiment of this invention.
- FIG. 6 is a partial perspective view of a wire memory plane obtained by the method of this invention.
- An object of this invention is to provide a method of making a wire memory plane, wherein a memory ma trix with a keeper is composed by perpendicularly arranging a group of digit wires and a group of word strips having on the back and two side surfaces thereof high magnetic permeability keepers of a rectangular shape with one arm removed.
- a word sheet having a keeper of a rectangular shape with one arm removed can be easily formed around a word strip by permalloy plating.
- the memory core plane made of such word sheets enable a high output and a high memory density.
- This invention relates to a method of assembling a memory plane by using word sheets made by the following processes:
- a copper foil 14 of a suitable thickness (for example, 35 t, t etc.) is plated with permalloy 15 or permalloy foil 15 is plated with copper 14, a binding agent 16 is applied to one side of the permalloy layer and this side is attached to the polyethylene terephthalate, polyamide film 17 etc. to form a flexible copper-coated foil film.
- This flexible copper-coated film is etched by a conventional etching method (the part for a word strip is protected by a resist and the other parts are etched) to form many word wires 18.
- a word wire 18 is plated by permalloy to form a. keeper 19 of a rectangular shape with one arm removed as shown in FIG. 5.
- This keeper is actually formed by permalloy plating before removing the resist formed in the process 2, i.e., in the state where only a side surface of a word strip is exposed. Then, the permalloy layers on the back and side surfaces connect to each other and the keeper is formed. Then the resist itself is eliminated.
- the word sheet formed in this way and the tunnel sheet are fixed together and a magnetic plated wire is inserted to form a memory plane.
- FIG. 6 shows the wire memory plane formed in this way.
- 20 indicates a tunnel sheet and 21 indicates a magnetic plated wire.
- EMBODIMENT A cooper foil of 35 u is cut square by 500 mm and sensitizer TPR (TOKYO OKA Co. Ltd.) is applied to both surfaces by a dipping method.
- One whole surface is exposed to a mercury-lamp sintering machine and developed.
- the foil, where a copper foil surface is exposed on one surface is plated with permalloy by use of a conventional permalloy bath (main component NiSO FeSO H 80 H BO Plating is carried out for thirty minutes with a current density of 3 A/ 100 cm a permalloy film of about p. is obtained.
- main component NiSO FeSO H 80 H BO Plating is carried out for thirty minutes with a current density of 3 A/ 100 cm a permalloy film of about p. is obtained.
- a saturated polyester binding agent is applied to the side of the permalloy layer of the permalloy plated copper foil and the foil is dired at 50C for thirty minutes.
- the same binding agent is applied to Mylar of 70 p. in thickness and dried at 50C for thirty minutes.
- the coper foil and the Mylar are folded, inserted between stainless plates and pressed under heat at 130C for one hour.
- TPR of about 3 p. in thickness is applied and dried, and the word wire pattern is sintered.
- the film After development and drying, the film is photoetched with ferrous chloride, after cleansing the film with water, the film is rinsed with dilute sulfuric acid to eliminate the ferrous chloride completely. Then permalloy plating is done with a current density of 3 A/ 100 cm for thirty minutes after which the resist is removed.
- This word sheet and a tunnel sheet are piled and stuck together, and a magnetic plated wire is inserted into a tunnel. Then, the terminals are soldered to form a memory plane.
- the output is increased by about 40 percent compared with the one from the plane without a keeper when the word current and the digit current are the same, and the output is increased by about percent compared with the one from the plane having only one keeper on the back surface (such as the one shown in FIG. 1).
- the extension of a magnetic rield gap is 1.2 mm when the word strip is 0.7 mm wide, while the extension is 1.0 mm when the word strip is 0.7 mm wide.
- the word pitch can be reduced by about 20 percent and the 5 memory density may be expanded by that amount.
- a method of making a wire memory plane comprising the steps of forming a laminate consisting of an electrically conductive layer and a high magnetic permeability layer and an insulating flexible sheet in a sandwich structure with said conductive layer and said insulating sheet having exposed surfaces and sandwiching said magnetic layer therebetween, masking the conductive layer with a resist to form such a pattern that strips are arranged in parallel relation, using the same resist pattern and in the same etching step etching the electrically conductive layer and the high magnetic permeability layer to form a plurality of spaced conductors each having a magnetic strip associated therewith, depositing a high magnetic permeability material on the sides of the etched conductors and magnetic strips, then removing the strip-like pattern resist from the conductive layer to form word strips, and facing uncovered surfaces of the electrically conductive layer resulting from the preceding step to an insulating sheet into which digit lines are embedded in parallel relation to thereby form a matrix composed of the word strips and the digit lines.
- step of depositing a high magnetic permeability material on the sides includes depositing the high magnetic permeability material on the resultant etched side portions of the electrically conductive layer and the high magnetic permeability layer such that the electrically conductive layer is surrounded on three sides thereof by high mag netic permeability material and has the pattern resist on the fourth side thereof.
Abstract
Disclosed is an improved wire memory plane, in which a memory matrix with a keeper is composed by perpendicularly arranging groups of word strips which comprise, on the back and two side surfaces of the word strip, a keeper made of a high magnetic permeability material and having a rectangular shape with one arm removed.
Description
United States Patent 1191 Maeda et a1.
[ June 18, 1974 [54] METHOD OF MAKING A WIRE MEMORY 3,585,616 6/1971 Mazzeo 340/174 BC PLANE 3,648,362 3/1972 Oshima et a1 29/604 3,699,619 10/1972 Yasuda et a1. 29/604 [75] e or Y0 a, Sh1m0date;Tam0tsu 3,727,304 4/1973 Granato et a1 29/604 Ueyama, Oyama; Naoki Fukutomi, Shimodate, all of Japan OTHER PUBLICATIONS [73] Assignee: Hitachi Chemical Company Anacker, Memory Device Keeper, IBM Tech.
Tokyo Japan Disc]. 13611., v01. 8, No. 11, 4/66, pages 1615-1616. [22] Wed: May 301 1972 McNichol, Fabrication Keeper, IBM Tech. [21] Appl. No.: 257,905 Discl. Bull., Vol. 8, No. 9, 2/66, pp. 1278-1279.
Related US. Application Data [62] Division or Sel'. N0. 32,528, April 28, 1970, W Examl'fe"-charles Lanham abandoned Assistant Exammer--Carl E. Hall Attorney, Agent, or Firm-Craig & Antonelli [30] Foreign Application Priority Data pr 57 ABSTRACT [52] 29/ 3 536 Disclosed is an improved wire memory plane, in which [51] Int Cl H01f7/06 a memory matrix with a keeper is composed by per- I I e e e I e v a a e e e e I e u e I a a a I e a e I e a a a e e a l a --:-e-|- [58] Fleld of Search :Z ,2 gg Z$ g comprise, on the back and two side surfaces of the word strip, a keeper made of a high magnetic permeability material and having a rectangular shape with [56] References Cited one arm removed UNITED STATES PATENTS 3,553,648 l/l97l German et a1 340/174 PW 4 Claims, 6 Drawing Figures BACKGROUND OF THE INVENTION 1. Field of the Invention:
This is a division, of application Ser. No. 32,528 filed Apr. 28, 1970 now abandoned.
This invention relates to a wire memory plane having a high output and a high memory density and a method of making the same.
2. Description of the Prior Art A wire memory plane is a magnetic memory device, in which a wire plated with a uniaxial-anisotrophy permalloy (hereinafter referred to as plated wire) is used for a digit wire and a word line is crossed perpendicularly thereover to form a matrix.
In this wire memory, a magnetic flux keeper is used to enhance the efficiency of the word current magnetic field, reduce the disturbance by the adjacent memory and to obtain high memory density.
In contrast to a ferrite core memory, a magnetic field indicated by a word current on the plated wire forms an open magnetic path. Thus, it is difficult toconcentrate the magnetic field due to the influence of the reducing magnetic field. Moreover, most of the magnetomotive force for driving is consumed by the space in the magnetic path and only a small part is given to the plated wires of the memory element.
In order to obviate the deficiencies described above, a magnetic flux keeper is employed in which the space in the magnetic path is filled with a material of high permeability (for example, ferrite, permalloy etc.) to focus the magnetic field and to reduce the magnetomotive force for driving.
Various forms of keepers have been tested up to now and it is known that a keepers ability is remarkably influenced by its form and structure.
Typical conventional examples are shown in FIGS. 1 to 3. FIG. 1 shows a matrix structure which is formed by sticking a group of word strips 2 (hereinafter referred to as a word sheet) made by etching a flexible copper film around an insulating sheet 1 (hereafter referred to as a tunnel sheet) comprising a hole into which a plated wire may be inserted.
The keeper comprises the structure, wherein sheets of high magnetic permeability material 3 are folded about the word sheet 2. Reference numeral 4 indicates an insulating sheet.
Since a gap corresponding to the thickness of the word strip and the insulating layer is present between the plated wire and the keeper in this structure, the magnetic path has a large magnetic resistance against a driving magnetic force, and the effective driving magnetic force increases only by about 20 percent when a keeper is used compared with the case where a keeper is not used.
Further, it is difficult to increase the memory density because of the magnetic field leakage from the gap magnetic field.
FIG. 2 also shows a device in which a magnetic plated wire is used for a memory element. Reference numeral 5 indicates a conductor substrate, 6 indicates a continuous foil keeper, 7 indicates an insulating film, 8 a magnetic plated wire, 9 a word strip and 10 a side keeper. In this device, a continuous permalloy foil keeper is provided at the outside and a side keeper is provided at the center of the word strip. This device has a better efficiency than the one shown in FIG. 1 because a side keeper is added. However, such a structure is hard to make, the distance between word strips becomes larger because of the presence of a side keeper, and thus it is 5 impossible to enhance the memory density.
FIG. 3 shows a device, in which a word wire 12 except the part contacting a plated wire 11 is completely surrounded by a keeper 13. This device is the most effcient one, but it is difiicult to make a plane having such a structure.
BRIEF DESCRIPTION OF Til-IE DRAWINGS FIG. 1 shows a sectional diagram of a conventional wire memory plane;
FIG. 2 shows a sectional diagram of another conventional wire memory plane;
FIG. 3 is a partial perspective view of a further example of a conventional wire memory plane;
FIGS. 4 and 5 are sectional diagrams showing a method of making a word strip according to one embodiment of this invention; and
FIG. 6 is a partial perspective view of a wire memory plane obtained by the method of this invention.
SUMMARY OF THE INVENTION An object of this invention is to provide a method of making a wire memory plane, wherein a memory ma trix with a keeper is composed by perpendicularly arranging a group of digit wires and a group of word strips having on the back and two side surfaces thereof high magnetic permeability keepers of a rectangular shape with one arm removed. According to the method of this invention, a word sheet having a keeper of a rectangular shape with one arm removed can be easily formed around a word strip by permalloy plating. The memory core plane made of such word sheets enable a high output and a high memory density.
DESCRIPTION OF THE PREFERRED EMBODIMENT Now, an embodiment of this invention will be explained with reference to FIGS. 4 to 6. This invention relates to a method of assembling a memory plane by using word sheets made by the following processes:
1. One whole surface of a copper foil 14 of a suitable thickness (for example, 35 t, t etc.) is plated with permalloy 15 or permalloy foil 15 is plated with copper 14, a binding agent 16 is applied to one side of the permalloy layer and this side is attached to the polyethylene terephthalate, polyamide film 17 etc. to form a flexible copper-coated foil film.
2. This flexible copper-coated film is etched by a conventional etching method (the part for a word strip is protected by a resist and the other parts are etched) to form many word wires 18.
3. After etching, only the side surface of a word wire 18 is plated by permalloy to form a. keeper 19 of a rectangular shape with one arm removed as shown in FIG. 5. This keeper is actually formed by permalloy plating before removing the resist formed in the process 2, i.e., in the state where only a side surface of a word strip is exposed. Then, the permalloy layers on the back and side surfaces connect to each other and the keeper is formed. Then the resist itself is eliminated. The word sheet formed in this way and the tunnel sheet are fixed together and a magnetic plated wire is inserted to form a memory plane.
FIG. 6 shows the wire memory plane formed in this way. In the figure, 20 indicates a tunnel sheet and 21 indicates a magnetic plated wire.
EMBODIMENT A cooper foil of 35 u is cut square by 500 mm and sensitizer TPR (TOKYO OKA Co. Ltd.) is applied to both surfaces by a dipping method. One whole surface is exposed to a mercury-lamp sintering machine and developed. The foil, where a copper foil surface is exposed on one surface, is plated with permalloy by use of a conventional permalloy bath (main component NiSO FeSO H 80 H BO Plating is carried out for thirty minutes with a current density of 3 A/ 100 cm a permalloy film of about p. is obtained. A saturated polyester binding agent is applied to the side of the permalloy layer of the permalloy plated copper foil and the foil is dired at 50C for thirty minutes. The same binding agent is applied to Mylar of 70 p. in thickness and dried at 50C for thirty minutes. The coper foil and the Mylar are folded, inserted between stainless plates and pressed under heat at 130C for one hour. Thus, a flexible copper-coated film is obtained. After polishing and trichlene cleaning the flexible coppercoated film, TPR of about 3 p. in thickness is applied and dried, and the word wire pattern is sintered.
After development and drying, the film is photoetched with ferrous chloride, after cleansing the film with water, the film is rinsed with dilute sulfuric acid to eliminate the ferrous chloride completely. Then permalloy plating is done with a current density of 3 A/ 100 cm for thirty minutes after which the resist is removed.
In this way, a word sheet having word strips whose back and side surfaces are surrounded by permalloy is obtained.
This word sheet and a tunnel sheet are piled and stuck together, and a magnetic plated wire is inserted into a tunnel. Then, the terminals are soldered to form a memory plane. In this memory plane, the output is increased by about 40 percent compared with the one from the plane without a keeper when the word current and the digit current are the same, and the output is increased by about percent compared with the one from the plane having only one keeper on the back surface (such as the one shown in FIG. 1).
In the structure shown in FIG. 1, the extension of a magnetic rield gap is 1.2 mm when the word strip is 0.7 mm wide, while the extension is 1.0 mm when the word strip is 0.7 mm wide. Thus, it is understood that the word pitch can be reduced by about 20 percent and the 5 memory density may be expanded by that amount.
We claim:
1. A method of making a wire memory plane, comprising the steps of forming a laminate consisting of an electrically conductive layer and a high magnetic permeability layer and an insulating flexible sheet in a sandwich structure with said conductive layer and said insulating sheet having exposed surfaces and sandwiching said magnetic layer therebetween, masking the conductive layer with a resist to form such a pattern that strips are arranged in parallel relation, using the same resist pattern and in the same etching step etching the electrically conductive layer and the high magnetic permeability layer to form a plurality of spaced conductors each having a magnetic strip associated therewith, depositing a high magnetic permeability material on the sides of the etched conductors and magnetic strips, then removing the strip-like pattern resist from the conductive layer to form word strips, and facing uncovered surfaces of the electrically conductive layer resulting from the preceding step to an insulating sheet into which digit lines are embedded in parallel relation to thereby form a matrix composed of the word strips and the digit lines.
2. The method according to claim 1, in which said electrically conductive layer is copper foil.
3. The method according to claim 1, wherein the step of depositing a high magnetic permeability material on the sides includes depositing the high magnetic permeability material on the resultant etched side portions of the electrically conductive layer and the high magnetic permeability layer such that the electrically conductive layer is surrounded on three sides thereof by high mag netic permeability material and has the pattern resist on the fourth side thereof.
4. The method according to claim 3, further including depositing the high magnetic permeability material on the side portions of the etched high magnetic permeability layer and electrically conductive layer so as to provide a spacing between adjacent side portions of the word strips.
Claims (4)
1. A method of making a wire memory plane, comprising the steps of forming a laminate consisting of an electrically conductive layer and a high magnetic permeability layer and an insulating flexible sheet in a sandwich structure with said conductive layer and said insulating sheet having exposed surfaces and sandwiching said magnetic layer therebetween, masking the conductive layer with a resist to form such a pattern that strips are arranged in parallel relation, using the same resist pattern and in the same etching step etching the electrically conductive layer and the high magnetic permeability layer to form a plurality of spaced conductors each having a magnetic strip associated therewith, depositing a high magnetic permeability material on the sides of the etched conductors and magnetic strips, then removing the strip-like pattern resist from the conductive layer to form word strips, and facing uncovered surfaces of the electrically conductive layer resulting from the preceding step to an insulating sheet into which digit lines are embedded in parallel relation to thereby form a matrix composed of the word strips and the digit lines.
2. The method according to claim 1, in which said electrically conductive layer is copper foil.
3. The method according to claim 1, wherein the step of depositing a high magnetic permeability material on the sides includes depositing the high magnetic permeability material on the resultant etched side portions of the electrically conductive layer and the high magNetic permeability layer such that the electrically conductive layer is surrounded on three sides thereof by high magnetic permeability material and has the pattern resist on the fourth side thereof.
4. The method according to claim 3, further including depositing the high magnetic permeability material on the side portions of the etched high magnetic permeability layer and electrically conductive layer so as to provide a spacing between adjacent side portions of the word strips.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00257905A US3816909A (en) | 1969-04-30 | 1972-05-30 | Method of making a wire memory plane |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3344669 | 1969-04-30 | ||
| US3252870A | 1970-04-28 | 1970-04-28 | |
| US00257905A US3816909A (en) | 1969-04-30 | 1972-05-30 | Method of making a wire memory plane |
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| Publication Number | Publication Date |
|---|---|
| US3816909A true US3816909A (en) | 1974-06-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US00257905A Expired - Lifetime US3816909A (en) | 1969-04-30 | 1972-05-30 | Method of making a wire memory plane |
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| US (1) | US3816909A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5956267A (en) * | 1997-12-18 | 1999-09-21 | Honeywell Inc | Self-aligned wordline keeper and method of manufacture therefor |
| US6048739A (en) * | 1997-12-18 | 2000-04-11 | Honeywell Inc. | Method of manufacturing a high density magnetic memory device |
| US6392922B1 (en) | 2000-08-14 | 2002-05-21 | Micron Technology, Inc. | Passivated magneto-resistive bit structure and passivation method therefor |
| US6413788B1 (en) | 2001-02-28 | 2002-07-02 | Micron Technology, Inc. | Keepers for MRAM electrodes |
| US20030203510A1 (en) * | 2002-04-30 | 2003-10-30 | Max Hineman | Protective layers for MRAM devices |
| US20040037109A1 (en) * | 2002-08-21 | 2004-02-26 | Witcraft William F. | Method for building a magnetic keeper or flux concentrator used for writing magnetic bits on a MRAM device |
| US20040066678A1 (en) * | 2002-10-02 | 2004-04-08 | Hyung-Rok Oh | Magnetic memory device implementing read operation tolerant to bitline clamp voltage (VREF) |
| US20050079638A1 (en) * | 2003-10-14 | 2005-04-14 | Drewes Joel A. | System and method for reducing shorting in memory cells |
| US20050270830A1 (en) * | 2003-09-05 | 2005-12-08 | Micron Technology, Inc. | Integrated circuit structure formed by damascene process |
| US6989576B1 (en) | 2001-08-30 | 2006-01-24 | Micron Technology, Inc. | MRAM sense layer isolation |
| US7166479B2 (en) | 1999-05-25 | 2007-01-23 | Micron Technology, Inc. | Methods of forming magnetic shielding for a thin-film memory element |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3553648A (en) * | 1969-07-14 | 1971-01-05 | North American Rockwell | Process for producing a plated wire memory |
| US3585616A (en) * | 1968-12-24 | 1971-06-15 | Ibm | Information storage element |
| US3648362A (en) * | 1968-07-10 | 1972-03-14 | Kokusai Denshin Denwa Co Ltd | Method for producing a memory matrix |
| US3699619A (en) * | 1969-07-30 | 1972-10-24 | Tokyo Shibaura Electric Co | Method for manufacturing a magnetic thin film memory element |
| US3727304A (en) * | 1970-09-28 | 1973-04-17 | Honeywell Inc | Plated wire memory fabrication |
-
1972
- 1972-05-30 US US00257905A patent/US3816909A/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3648362A (en) * | 1968-07-10 | 1972-03-14 | Kokusai Denshin Denwa Co Ltd | Method for producing a memory matrix |
| US3585616A (en) * | 1968-12-24 | 1971-06-15 | Ibm | Information storage element |
| US3553648A (en) * | 1969-07-14 | 1971-01-05 | North American Rockwell | Process for producing a plated wire memory |
| US3699619A (en) * | 1969-07-30 | 1972-10-24 | Tokyo Shibaura Electric Co | Method for manufacturing a magnetic thin film memory element |
| US3727304A (en) * | 1970-09-28 | 1973-04-17 | Honeywell Inc | Plated wire memory fabrication |
Non-Patent Citations (2)
| Title |
|---|
| Anacker, Memory Device . . . Keeper, IBM Tech. Discl. Bull., Vol. 8, No. 11, 4/66, pages 1615 1616. * |
| McNichol, Fabrication . . . Keeper, IBM Tech. Discl. Bull., Vol. 8, No. 9, 2/66, pp. 1278 1279. * |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6048739A (en) * | 1997-12-18 | 2000-04-11 | Honeywell Inc. | Method of manufacturing a high density magnetic memory device |
| US5956267A (en) * | 1997-12-18 | 1999-09-21 | Honeywell Inc | Self-aligned wordline keeper and method of manufacture therefor |
| US7166479B2 (en) | 1999-05-25 | 2007-01-23 | Micron Technology, Inc. | Methods of forming magnetic shielding for a thin-film memory element |
| US20040091634A1 (en) * | 2000-08-14 | 2004-05-13 | Micron Technology, Inc. | Passivated magneto-resistive bit structure and passivation method therefor |
| US6623987B2 (en) | 2000-08-14 | 2003-09-23 | Micron Technology, Inc. | Passivated magneto-resistive bit structure and passivation method therefor |
| US7427514B2 (en) | 2000-08-14 | 2008-09-23 | Micron Technology, Inc. | Passivated magneto-resistive bit structure and passivation method therefor |
| US6392922B1 (en) | 2000-08-14 | 2002-05-21 | Micron Technology, Inc. | Passivated magneto-resistive bit structure and passivation method therefor |
| US6806546B2 (en) | 2000-08-14 | 2004-10-19 | Micron Technology, Inc. | Passivated magneto-resistive bit structure |
| US20040227244A1 (en) * | 2000-08-14 | 2004-11-18 | Micron Technology, Inc. | Passivated magneto-resistive bit structure |
| US6417561B1 (en) | 2001-02-28 | 2002-07-09 | Micron Technology, Inc. | Keepers for MRAM electrodes |
| US6413788B1 (en) | 2001-02-28 | 2002-07-02 | Micron Technology, Inc. | Keepers for MRAM electrodes |
| US7242067B1 (en) | 2001-08-30 | 2007-07-10 | Micron Technology, Inc. | MRAM sense layer isolation |
| US6989576B1 (en) | 2001-08-30 | 2006-01-24 | Micron Technology, Inc. | MRAM sense layer isolation |
| US20030203510A1 (en) * | 2002-04-30 | 2003-10-30 | Max Hineman | Protective layers for MRAM devices |
| US20040264240A1 (en) * | 2002-04-30 | 2004-12-30 | Max Hineman | Protective layers for MRAM devices |
| US6783995B2 (en) | 2002-04-30 | 2004-08-31 | Micron Technology, Inc. | Protective layers for MRAM devices |
| US7211849B2 (en) | 2002-04-30 | 2007-05-01 | Micron Technology, Inc. | Protective layers for MRAM devices |
| US6914805B2 (en) | 2002-08-21 | 2005-07-05 | Micron Technology, Inc. | Method for building a magnetic keeper or flux concentrator used for writing magnetic bits on a MRAM device |
| US20060067113A1 (en) * | 2002-08-21 | 2006-03-30 | Micron Technology, Inc. | Methods for fabricating a magnetic keeper for a memory device |
| US20040037109A1 (en) * | 2002-08-21 | 2004-02-26 | Witcraft William F. | Method for building a magnetic keeper or flux concentrator used for writing magnetic bits on a MRAM device |
| US7145798B2 (en) | 2002-08-21 | 2006-12-05 | Micron Technology, Inc. | Methods for fabricating a magnetic keeper for a memory device |
| US20040066678A1 (en) * | 2002-10-02 | 2004-04-08 | Hyung-Rok Oh | Magnetic memory device implementing read operation tolerant to bitline clamp voltage (VREF) |
| US20050270830A1 (en) * | 2003-09-05 | 2005-12-08 | Micron Technology, Inc. | Integrated circuit structure formed by damascene process |
| US7078239B2 (en) | 2003-09-05 | 2006-07-18 | Micron Technology, Inc. | Integrated circuit structure formed by damascene process |
| US20050079638A1 (en) * | 2003-10-14 | 2005-04-14 | Drewes Joel A. | System and method for reducing shorting in memory cells |
| US7112454B2 (en) | 2003-10-14 | 2006-09-26 | Micron Technology, Inc. | System and method for reducing shorting in memory cells |
| US7358553B2 (en) | 2003-10-14 | 2008-04-15 | Micron Technology, Inc. | System and method for reducing shorting in memory cells |
| US20060192235A1 (en) * | 2003-10-14 | 2006-08-31 | Drewes Joel A | System and method for reducing shorting in memory cells |
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