US3916366A - Thick film varistor and method of making the same - Google Patents
Thick film varistor and method of making the same Download PDFInfo
- Publication number
- US3916366A US3916366A US517880A US51788074A US3916366A US 3916366 A US3916366 A US 3916366A US 517880 A US517880 A US 517880A US 51788074 A US51788074 A US 51788074A US 3916366 A US3916366 A US 3916366A
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- US
- United States
- Prior art keywords
- varistor
- percent
- weight
- reacted
- glass frit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
- H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
Definitions
- the varistor material is comprised of a reacted material consisting of nickel oxide and lithium carbonate.
- the varistor material may also comprise glass frit material, solvent material and binder materials mixed with the reacted material. If desired, electrically conductive metal powders may be incorporated in the varistor material to vary the resistivity of the varistor material. The method of making varistor is also disclosed.
- This invention relates to a thick film varistor and more particularly to a thick film varistor having the varistor film or material printed on a substrate material wherein the film is comprised of a reacted material consisting of nickel oxide and lithium carbonate.
- a further object of the invention is to provide a method of producing a thick film varistor having improved operating characteristics.
- a further object of the invention is to provide an economical method of producing a thick film varistor.
- a further object of the invention is to provide a thick film varistor wherein the varistor characteristics may be modified by the incorporation of a metal powder so as to modify the resistivity thereof.
- FIG. 1 is a perspective view of a varistor produced by the method of this invention:
- FIG. 2 is a perspective view of a modified form of the varistor:
- FIG. 3 is a perspective view of a still further modified form of the varistor.
- FIG. 4 is a sectional view as seen along lines 4 4 of FIG. 2.
- Varistor 10 comprises a pair of terminal conductors and 22 having the varistor material 18 sandwiched therebetween. Conductors 20 and 22 and material 18 are positioned on a ceramic substrate body or material 16.
- Varistor 12 comprises electrical conductors 26 and 28 having the varistor material 19 electrically connected thereto and extending therebetween. Conductors 26,28 and material 19 are positioned on the ceramic substrate body or material 24.
- the numerals 30 refer to terminal conductors which are electrically connected by the varistor material. Conductors 30 and varistor material 32 are positioned on substrate body or material 34.
- the varistor is prepared by the following process.
- Conductive nickel oxide powder is prepared by ball milling nickel oxide powder with lithium carbonate powder in an acetone solution to obtain a homogeneous mixture which is then dried.
- the dried powders are then reacted at elevated temperatures between 1050-l 200C to obtain a conductive nickel oxide.
- the amount of lithium carbonate in the mixture influences the conductivity of the resultant oxide powders, and percentages of l to 6 percent of lithium carbonate by weight have been found to be preferred.
- the reacted material nickel oxide and lithium carbonate is then ball milled in acetone until a desired particle size is obtained.
- the powders are then dried and screened through a 325 mesh sieve.
- the nickel oxide-lithium carbonate mixture is then formulated into a thick film paste using procedures well known to those skilled in the art of formulating thick film resistor materials.
- Glass frit in the lead borosilicate system may be used if desired, as can other glass systems, with the choice of the glass system depending on the subsequent firing temperatures at which the thick film varistor is to 'be fired- Solvents and thixotropic binders may be used, such as butyl carbitol acetate, and ethyl cellulose, but the solvents and binders may be se lected from other materials.
- the resistivity of the material may be modified by the addition of conductive metal powder such as silver powder or nickel powder.
- the metal powders may be used in various amounts depending upon the value of k required. Silver powders are found to be the most effective in controlling the low-current valueof the resistivity and weight ratios of Ni -xLi ozAg of :0.0' to 50:50 have been found to produce excellent thick film varistor pastes.
- the thick film varistor paste prepared according to the method described above is then printed on the substrate bodies 16, 24 or 34 (and conductors) in FIGS. 1, 2 and 3 respectively (such as Al O in a manner familiar to the thick film industry. It should be understood that other suitable substrate materials known to the industry may also be used.
- the terminal conductors illustrated in FIGS. 1, 2 and 3 are used to terminate the varistor and may be comprised of such materials as Pt- Au, Pd-Au, Pd-Ag or Pt-Ag. It has been found that silver bearing conductors result in the best terminations and are the preferred embodiment.
- the thick film varistors are then dried and fired at temperatures of 600 to 950C peak temperatures. The total furnace profile may vary from 20 minutes to 1 hour depending on the peak furnace temperature and the composition of the glass frit selected in the formulation.
- the pattern used to print the thick film varistor may be varied and any conventional pattern currently used to print thick film varistors may be used.
- the selection of the pattern is based on the desired varistor characteristics. It has been found that for high current, low voltage applications, the pattern or embodiment shown in FIG. 1 is preferred while the design illustrated in FIG. 2 is preferred for low current applications.
- the parallel combination of varistors shown in FIG. 3 may be used when the current voltage characteristics of the parallel varistors are closely matched.
- varistor configuration of FIG. 1 requires less conductive varistor paste than do the configurations of FIGS. 2 and 3.
- varistor formulations which have been found to be useful for the different varistor designs are shown in Table 1 below.
- varistor material being comprised of a reacted material Consisting of nickel oxide and lithium carbonate.
- said lithium carbonate comprises 1 to 6 percent by weight of the said material.
- nickel oxide comprises 94 to 99 percent by weight of the reacted material.
- varistor of claim 1 wherein said varistor material also comprises a glass frit material mixed with said reacted material.
- varistor of claim 3 wherein said varister material also comprises solvent and binder materials mixed with said glass frit material and said reacted material.
- varistor of claim 3 wherein said varistor material also comprises electrically conductive metal powders mixed with said glass frit material and said reacted 6.
- the varistor of claim is silver powder.
- nickel oxide-lithium carbonate 17.06 percent by weight nickel powder; 22.75 percent by weight glass frit; 7.84 percent'by weight ethyl cellulose; and 35.29 percent by weight butyl carbitol acetate.
- varistor of claim 1 wherein said varistor material approximately comprises 34.12 percent by weight nickel oxide-lithium carbonate; 22.75 percent by weight glass frit; 7.84 percent by weight ethyl cellulose; and 35.29 percent by weight butyl carbitol acetate.
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US517880A US3916366A (en) | 1974-10-25 | 1974-10-25 | Thick film varistor and method of making the same |
Applications Claiming Priority (1)
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---|---|---|---|
US517880A US3916366A (en) | 1974-10-25 | 1974-10-25 | Thick film varistor and method of making the same |
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US3916366A true US3916366A (en) | 1975-10-28 |
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US517880A Expired - Lifetime US3916366A (en) | 1974-10-25 | 1974-10-25 | Thick film varistor and method of making the same |
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Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4097834A (en) * | 1976-04-12 | 1978-06-27 | Motorola, Inc. | Non-linear resistors |
FR2513032A1 (en) * | 1981-09-14 | 1983-03-18 | Carreras Michelle | INTEGRATED PROTECTION AGAINST OVERVOLTAGES OF AN ELECTRONIC CIRCUIT, AND ELECTRONIC CIRCUIT PROTECTED BY THIS DEVICE |
FR2527039A1 (en) * | 1982-05-14 | 1983-11-18 | Inf Milit Spatiale Aeronaut | DEVICE FOR PROTECTING AN ELECTRONIC DEVICE AGAINST THE VOLTAGES GENERATED BY AN ELECTROMAGNETIC FIELD |
US4460624A (en) * | 1981-09-04 | 1984-07-17 | Thomson-Csf | Process for the manufacture of thick layer varistors on a hybrid circuit substrate |
EP0115638A2 (en) * | 1983-01-10 | 1984-08-15 | Hitachi, Ltd. | Thick film circuit board |
US4584553A (en) * | 1983-06-07 | 1986-04-22 | Nippon Soken, Inc. | Coated layer type resistor device |
US4657699A (en) * | 1984-12-17 | 1987-04-14 | E. I. Du Pont De Nemours And Company | Resistor compositions |
US4660017A (en) * | 1985-03-04 | 1987-04-21 | Marcon Electronics Co., Ltd. | Chip-type varistor |
WO1989003862A1 (en) * | 1987-10-23 | 1989-05-05 | Ray Andrews | Glass enamel |
US4888465A (en) * | 1987-07-11 | 1989-12-19 | Robert Krups Stiftung & Co. Kg. | Hot beverage machine with thick film electric heater |
US4959090A (en) * | 1988-09-28 | 1990-09-25 | Ciba-Geigy Corporation | Glass enamel coating compositions |
US5334412A (en) * | 1991-12-23 | 1994-08-02 | Ferro Corporation | Enamel for use on glass and a method of using the same |
US5837178A (en) * | 1990-03-16 | 1998-11-17 | Ecco Limited | Method of manufacturing varistor precursors |
US5973588A (en) * | 1990-06-26 | 1999-10-26 | Ecco Limited | Multilayer varistor with pin receiving apertures |
US6008719A (en) * | 1994-07-01 | 1999-12-28 | Thomson-Csf | Electrical control device with crosstalk correction, and application thereof to magnetic write/read heads |
US6183685B1 (en) | 1990-06-26 | 2001-02-06 | Littlefuse Inc. | Varistor manufacturing method |
US20020125985A1 (en) * | 2001-03-09 | 2002-09-12 | Rohm Co., Ltd. | Chip resistor |
US20030011026A1 (en) * | 2001-07-10 | 2003-01-16 | Colby James A. | Electrostatic discharge apparatus for network devices |
US20030025587A1 (en) * | 2001-07-10 | 2003-02-06 | Whitney Stephen J. | Electrostatic discharge multifunction resistor |
US6549114B2 (en) * | 1998-08-20 | 2003-04-15 | Littelfuse, Inc. | Protection of electrical devices with voltage variable materials |
US20050141166A1 (en) * | 2003-12-25 | 2005-06-30 | Hidenori Katsumura | Method of manufacturing ESD protection component |
US20060262477A1 (en) * | 2005-05-23 | 2006-11-23 | Fujitsu Limited | Electronic circuit device and its manufacture method, varistor manufacture method and semiconductor device manufacture method |
US20090085716A1 (en) * | 2007-10-01 | 2009-04-02 | Jung-Ho Kim | Semiconductor device and method of fabricating the same |
EP2337070A1 (en) * | 2009-12-17 | 2011-06-22 | ABB Technology AG | Electronic device with non-linear resistive field grading and method for its manufacturing |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3180841A (en) * | 1962-08-28 | 1965-04-27 | Int Resistance Co | Resistance material and resistor made therefrom |
US3429831A (en) * | 1965-01-18 | 1969-02-25 | Gen Electric | Lithiated nickel oxide crystals |
US3682841A (en) * | 1970-12-01 | 1972-08-08 | Matsushita Electric Ind Co Ltd | Voltage dependent resistors in a bulk type |
US3689863A (en) * | 1969-12-08 | 1972-09-05 | Matsushita Electric Ind Co Ltd | Voltage dependent resistors in a surface barrier type |
US3760318A (en) * | 1971-08-27 | 1973-09-18 | Matsushita Electric Ind Co Ltd | Process for making a voltage dependent resistor |
-
1974
- 1974-10-25 US US517880A patent/US3916366A/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3180841A (en) * | 1962-08-28 | 1965-04-27 | Int Resistance Co | Resistance material and resistor made therefrom |
US3429831A (en) * | 1965-01-18 | 1969-02-25 | Gen Electric | Lithiated nickel oxide crystals |
US3689863A (en) * | 1969-12-08 | 1972-09-05 | Matsushita Electric Ind Co Ltd | Voltage dependent resistors in a surface barrier type |
US3682841A (en) * | 1970-12-01 | 1972-08-08 | Matsushita Electric Ind Co Ltd | Voltage dependent resistors in a bulk type |
US3760318A (en) * | 1971-08-27 | 1973-09-18 | Matsushita Electric Ind Co Ltd | Process for making a voltage dependent resistor |
Cited By (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4097834A (en) * | 1976-04-12 | 1978-06-27 | Motorola, Inc. | Non-linear resistors |
US4460624A (en) * | 1981-09-04 | 1984-07-17 | Thomson-Csf | Process for the manufacture of thick layer varistors on a hybrid circuit substrate |
FR2513032A1 (en) * | 1981-09-14 | 1983-03-18 | Carreras Michelle | INTEGRATED PROTECTION AGAINST OVERVOLTAGES OF AN ELECTRONIC CIRCUIT, AND ELECTRONIC CIRCUIT PROTECTED BY THIS DEVICE |
WO1983001153A1 (en) * | 1981-09-14 | 1983-03-31 | Carreras, Michelle | Integrated protection device against overvoltages in an electronic circuit and electronic circuit protected by such device |
US4559579A (en) * | 1982-05-14 | 1985-12-17 | Thomson Csf | Device for the protection of an electronic component and/or circuit against the disturbances (voltages) generated by an external electromagnetic field |
FR2527039A1 (en) * | 1982-05-14 | 1983-11-18 | Inf Milit Spatiale Aeronaut | DEVICE FOR PROTECTING AN ELECTRONIC DEVICE AGAINST THE VOLTAGES GENERATED BY AN ELECTROMAGNETIC FIELD |
WO1983004157A1 (en) * | 1982-05-14 | 1983-11-24 | Compagnie D'informatique Militaire Spatiale Et Aer | Device for the protection of an electronic device against voltages generated by an electromagnetic field |
EP0115638A3 (en) * | 1983-01-10 | 1986-03-26 | Hitachi, Ltd. | Thick film circuit board |
EP0115638A2 (en) * | 1983-01-10 | 1984-08-15 | Hitachi, Ltd. | Thick film circuit board |
US4584553A (en) * | 1983-06-07 | 1986-04-22 | Nippon Soken, Inc. | Coated layer type resistor device |
US4657699A (en) * | 1984-12-17 | 1987-04-14 | E. I. Du Pont De Nemours And Company | Resistor compositions |
US4660017A (en) * | 1985-03-04 | 1987-04-21 | Marcon Electronics Co., Ltd. | Chip-type varistor |
US4888465A (en) * | 1987-07-11 | 1989-12-19 | Robert Krups Stiftung & Co. Kg. | Hot beverage machine with thick film electric heater |
WO1989003862A1 (en) * | 1987-10-23 | 1989-05-05 | Ray Andrews | Glass enamel |
GB2227484A (en) * | 1987-10-23 | 1990-08-01 | Ray Andrews | Glass enamel |
GB2227484B (en) * | 1987-10-23 | 1991-12-18 | Ray Andrews | Glass enamel |
US4959090A (en) * | 1988-09-28 | 1990-09-25 | Ciba-Geigy Corporation | Glass enamel coating compositions |
US5837178A (en) * | 1990-03-16 | 1998-11-17 | Ecco Limited | Method of manufacturing varistor precursors |
US6334964B1 (en) | 1990-03-16 | 2002-01-01 | Littelfuse, Inc. | Varistor ink formulations |
US6743381B2 (en) | 1990-03-16 | 2004-06-01 | Littlefuse, Inc. | Process for forming varistor ink composition |
US5973588A (en) * | 1990-06-26 | 1999-10-26 | Ecco Limited | Multilayer varistor with pin receiving apertures |
US6183685B1 (en) | 1990-06-26 | 2001-02-06 | Littlefuse Inc. | Varistor manufacturing method |
US5334412A (en) * | 1991-12-23 | 1994-08-02 | Ferro Corporation | Enamel for use on glass and a method of using the same |
US6008719A (en) * | 1994-07-01 | 1999-12-28 | Thomson-Csf | Electrical control device with crosstalk correction, and application thereof to magnetic write/read heads |
US6549114B2 (en) * | 1998-08-20 | 2003-04-15 | Littelfuse, Inc. | Protection of electrical devices with voltage variable materials |
US6856233B2 (en) * | 2001-03-09 | 2005-02-15 | Rohm Co., Ltd. | Chip resistor |
US20020125985A1 (en) * | 2001-03-09 | 2002-09-12 | Rohm Co., Ltd. | Chip resistor |
US20030025587A1 (en) * | 2001-07-10 | 2003-02-06 | Whitney Stephen J. | Electrostatic discharge multifunction resistor |
US20030011026A1 (en) * | 2001-07-10 | 2003-01-16 | Colby James A. | Electrostatic discharge apparatus for network devices |
US7034652B2 (en) | 2001-07-10 | 2006-04-25 | Littlefuse, Inc. | Electrostatic discharge multifunction resistor |
US7035072B2 (en) | 2001-07-10 | 2006-04-25 | Littlefuse, Inc. | Electrostatic discharge apparatus for network devices |
US20050141166A1 (en) * | 2003-12-25 | 2005-06-30 | Hidenori Katsumura | Method of manufacturing ESD protection component |
US7189297B2 (en) * | 2003-12-25 | 2007-03-13 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing ESD protection component |
US20060262477A1 (en) * | 2005-05-23 | 2006-11-23 | Fujitsu Limited | Electronic circuit device and its manufacture method, varistor manufacture method and semiconductor device manufacture method |
US7570149B2 (en) | 2005-05-23 | 2009-08-04 | Fujitsu Limited | Electronic circuit device including electric element and varistor on substrate and its manufacture method |
US20090085716A1 (en) * | 2007-10-01 | 2009-04-02 | Jung-Ho Kim | Semiconductor device and method of fabricating the same |
EP2337070A1 (en) * | 2009-12-17 | 2011-06-22 | ABB Technology AG | Electronic device with non-linear resistive field grading and method for its manufacturing |
WO2011080093A1 (en) * | 2009-12-17 | 2011-07-07 | Abb Technology Ag | Power electronic module with non-linear resistive field grading and method for its manufacturing |
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Legal Events
Date | Code | Title | Description |
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AS | Assignment |
Owner name: MANUFACTURERS BANK OF DETROIT, A NATIONAL BANKING Free format text: SECURITY INTEREST;ASSIGNOR:DALE ELECTRONICS, INC., A CORP. OF DE.;REEL/FRAME:004510/0078 Effective date: 19851031 Owner name: NATIONAL ASSOCIATION, BANK HAPOALIM, B.M. AND BAN Free format text: SECURITY INTEREST;ASSIGNOR:DALE ELECTRONICS, INC., A CORP. OF DE.;REEL/FRAME:004510/0078 Effective date: 19851031 |
|
AS | Assignment |
Owner name: MANUFACTURERS BANK, N.A. Free format text: SECURITY INTEREST;ASSIGNOR:DALE ELECTRONICS, INC.;REEL/FRAME:006080/0038 Effective date: 19920110 |