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Publication numberUS3916490 A
Publication typeGrant
Publication dateNov 4, 1975
Filing dateApr 17, 1974
Priority dateJun 24, 1971
Also published asCA946055A1, US3723920, US3832761
Publication numberUS 3916490 A, US 3916490A, US-A-3916490, US3916490 A, US3916490A
InventorsGeorge C Callander, Desmond F Sheahan
Original AssigneeGte Automatic Electric Lab Inc
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
Method of assembly of crystal filters
US 3916490 A
Abstract
In this filter, each one of two coupled resonators is formed on a different crystal wafer. Each wafer is accurately positioned with respect to one longitudinal groove in the periphery of a ceramic ring. The wafer is supported in the central opening in the ring with wires which are soldered to metalized areas of the ring and to resonator lead patterns on the wafer to form a resonator assembly. Each resonator is tuned to operate at a predetermined frequency by locating the associated resonator assembly in a masking jig with respect to the one groove on the ring to accurately align the resonator electrode patterns with holes in the jig. A metal film is evaporated onto a resonator electrode to adjust the resonant frequency of the associated resonator to be equal to the predetermined frequency. In a packaged filter the resonator assemblies and electrically conductive spacers are alternately stacked on a header having a pair of posts protruding therefrom that are located in longitudinal grooves in the ceramic rings and openings in the spacers for supporting the stacked elements. Extensions and tabs on the spacers are soldered to the alignment posts and metalized areas on the rings, respectively, to ground the resonators and spacers to the header. The spacer sandwiched between the rings provides isolation between the resonators on adjacent wafers. A discrete chip capacitor is connected to a resonator electrode and a metalized area on a ring which is grounded to the header. The resonator electrodes are also selectively interconnected and connected to insulated lead pins in the header to produce a filter structure. The packaged filter is hermetically sealed by cold welding a cover to the header.
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Description  (OCR text may contain errors)

United States Patent 1191 Sheahan et al.

[ Nov. 4, 1975 METHOD OF ASSEMBLY OF CRYST FILTERS [75] Inventors: Desmond F. Sheahan, San Carlos;

George C. Callander, Palo Alto, both of Calif.

[73] Assignee: GTE Automatic Electric Laboratories Incorporated, Northlake, Ill.

[22] Filed: Apr. 17, 1974 [21] Appl. No.: 461,686

Related US. Application Data [62] Division of Ser. No. 285,989, Sept. 5, 1972, Pat. No. 3,832,761, which is a division of Ser. No. 156,275, June 24, 1971, Pat. No. 3,723,920.

[52] US. Cl. 29/2535; 310/94; 310/95; 333/72 [51] Int. Cl. H01L 41/22 [58] Field of Search 29/25.35; 333/72; 3l0/9.1, 310/9.4, 9.5; 33/180 R Primary Examiner-Carl E. Hall Attorney, Agent, or Firm-Russell A. Cannon; Leonard R. Cool [57] ABSTRACT In this filter, each one of two coupled resonators is formed on a different crystal wafer. Each wafer is accurately positioned with respect to one longitudinal groove in the periphery of a ceramic ring. The wafer is supported in the central opening in the ring with wires which are soldered to metalized areas of the ring with wires which are soldered to metalized areas of the ring and to resonator lead patterns on the wafer to form a resonator assembly. Each resonator is tuned to operate at a predetermined frequency by locating the associated resonator assembly in a masking jig with respect to the one groove on the ring to accurately align the resonator electrode patterns with holes in the jig. A metal film is evaporated onto a resonator electrode to adjust the resonant frequency of the associated resonator to be equal to the predetermined frequency. In a packaged filter the resonator assemblies and electrically conductive spacers are alternately stacked on a header having a pair of posts protruding therefrom that are located in longitudinal grooves in the ceramic rings and openings in the spacers for supporting the stacked elements. Extensions and tabs on the spacers are soldered to the alignment posts and metalized areas on the rings, respectively, to ground the resonators and spacers to the header. The spacer sandwiched between the rings provides isolation between the resonators on adjacent wafers. A discrete chip capacitor is connected to a resonator electrode and a metalized area on a ring which is grounded to the header. The resonator electrodes are also selectively interconnected and connected to insulated lead pins in the header to produce a filter structure. The packaged filter is hermetically sealed by cold welding a cover to the header.

2 Claims, 14 Drawing Figures U.S. Patent Nov. 4, 1975 Sheet 1 of3 3,916,490

I l I l I IIJ 9 T 2 2/ T W .YIIEIA. u

I m u n u n T. n

u s u u T r: III! FIG.

FIG. /4

US. Patent Nov. 4, 1975 Sheet 2 of3 3,916,490

US. Patent Nov. 4, 1975 Sheet 3 of3 3,916,490

FIG.

FIG. /3

osc F M.

METHOD OF ASSEMBLY OF CRYSTAL FILTERS This is a division of application Ser. No. 285,989, filed Sept. 5, 1972, now US. Pat. No. 3,832,761, issued Sept. 3, 1974 which is a division of application Ser. No. 156,275, filed June 24, 1971, now US. Pat. No. 3,723,920, issued Mar. 27, 1973.

BACKGROUND OF THE INVENTION This invention relates to crystal filters and more particularly to an improved crystal filter assembly and to the method of fabricating such a filter assembly.

Considerable work has been performed in recent years to perfect the theory and design of electrical filters comprising crystal wafers having resonators formed thereon. Each resonator comprises overlapping electrode patterns formed on opposite surfaces of a crystal body by vapor deposition. In early crystal filters each single or coupled resonator was formed on a separate AT-cut crystal wafer. The individual resonator wafers were connected by wires singly or back-to-back to a header and hermetically sealed each in a separate cover, see Proceedings of the 23rd Annual Symposium on Frequency Control, 1969, pp. 65-92. This method of mounting resonators makes it difficult to align a wafer for fine tuning a resonator by depositing more metal on the electrode patterns since the mounting wires are easily bent. This means that alignment of the patterns for tuning must be accomplished optically or by physically locating on the circumference of the wafer. The former method is expensive and thejlatter is difficult to accomplish. These packaged resonators were interconnected with discrete components such as is illustrated in US. Pat. No. 2,859,416 to. form a structure having a desired filter characteristic. The resultant filter assembly may include several resonator packages and thus be relatively large and complex.

In an effort to reduce the size of the filter assembly and to facilitate fabrication thereof, monolithic crystal filters were made with all of the resonators formed on the same quartz body through which resonators are acoustically coupled. Monolithic crystal filters are described in the article Theory and Design of the. Monolithic Crystal Filter by W. D. Beaver, Proceedings of the 21st Annual Symposium on Frequency Control, .1967, pp. 179-199. Although it would appear desirable to fabricate a complete filter network on a single slice of piezoelectric crystal, such filters have poor stopband performance because of undesirable coupling that exists between the resonators. Also, since all of the resonators for a particular filter are formed on the same crystal body, the number of parameters (such as electrode spacing, size, thickness, etc.) that must have values within specified limits to produce an acceptable resonator structure is greatly increased. This dictates that great care be taken in fabricating such filters since the whole resonator structure may have to be scrapped if one resonator is bad. It can be seen therefore that the unit production cost associated with fabricating acceptable monolithic resonator structures is high unless they are produced in very large quantities and with sophisticated and highly automated production equipment.

An object of this invention is the provision of an improved crystal filter assembly overcoming these disadvantages and wherein single and coupled resonators are formed on different crystal wafers.

2 Another object is the provision of an improved method of producing a crystal filter assembly.

Another object is the provision of an improved method of fine tuning a resonator.

DESCRIPTION OF THE DRAWINGS This invention will be more clearly and fully understood from the following detailed description thereof taken in conjunction with the drawings where:

FIG. 1 is a schematic circuit diagram of a bandpass filter;

FIG. 2 is a perspective view of a coupled resonator comprising a crystal wafer;

FIG. 3 is a perspective view of one side of a filter assembly embodying this invention and which is accurately modeled by the electrical equivalent circuit in FIG. 1;

FIG. 4 isa perspective view of the other side of the filter assembly in FIG. 3;

FIG. 5 is a bottom view of the header; FIG. 6 is a section view taken along lines 6-6 in FIG.

FIG. 7 is a top view of a resonator assembly with the wafer in FIG. 2 mounted in the central opening of a ceramic mounting ring;

FIG. 8 is a side view of the resonator assembly in FIG.

FIG. 9 is a top view of a holding jig for mounting the wafer in the ring, the latter two elements being shown in phantom lines;

FIG. 10 is a section view taken along lines 10-10 in FIG. 9;

FIG. 11 is a top view of a masking jig for fine tuning the resonant frequency of a resonator with a resonator assembly shown in phantom lines;

FIG. 12 is a section view taken along lines 12-12 in FIG. 11;

FIG. 13 is a plan view of equipment for evaporating metal onto a resonator electrode for fine tuning the resonator; and

FIG. 14 is a top view of a spacer.

DESCRIPTION OF PREFERRED EMBODIMENT Consider now the bandpass filter network 4 that is illustrated in schematic form in FIG. 1. Filter 4 comprises shunt capacitors 5-92that are connected between the grounded line 10 and terminals of the series resonant circuits 11-14. Bandpass filter 4 may be derived, by way of example, from a lowpass filter by the techniques outlined in the article Single Sideband Filters for Short Haul Systems by D. F. Sheahan, Proceedings of the 1971 International Conference on Systems, Networks and Computers, Oaxtepec, Mexico, January 1971, pp. 744-748.

Each of the circuits 16 and 17 in FIG. 1, including the associated capacitors 18 and 19 which are shown in broken lines, represents the electrical equivalent circuit of an acoustically coupled resonator such as the one illustrated in FIG. 2 which comprises a quartz crystal wafer 21 and electrode patterns formed thereon. The capacitors 7, l8 and 19 in FIG. 1 are effectively connected in parallel so that the net capacitance between line 22 and ground is the sum of the individual capacitances thereof. Since the capacitances of the resonator capacitors l8 and 19 are small, they are ignored in many instances. In practice, however, capacitor 7 may be selected to have a smaller value of capacitance than that dictated by the filter design in order to compensate for the additional capacitance provided by capacitors 1 8 and 19. Thus, it is seen that filter'4 can be realized with the two coupled resonator'c'ircuits l6 and 17 and a shunt capacitor 7 connected-therebetween.

The design of coupled resonators is described in prior art publications including the aforementioned Beaver article and US. Pat. No. 3,564,463 anddoes not per se constitute applicants invention. Since the acoustically coupled resonators, 16 and 17 are similar, only the structure comprising coupled resonator 16 will be referenced and described in detail. Referring now to FIG.

-2, coupled resonator l6. comprisesconductive electrode patterns formed on the opposite major faces or sides of wafer 21. The patterns comprise the rectangular electrodes 27, 28 and 29, 30 on opposite sides of the wafer and leads 31-34. The wafer is a thin disc of AT- cut quartz crystal, for example, having one edge or flat 35 cut along a particular direction in the XZ plane of the quartz. The frequency of each coupled resonator and its electrical equivalent circuit in FIG. 1 is a function of the size, shape and spacing of the electrodes 27-30, inclusive. The patterns are formed on wafer 21 by evaporating gold through a metal mask (not shown) onto opposite sides of the wafer. The mask, and thus the patterns, are accurately located with respect to the vto accurately ,control the resonant frequency of each resonator during this operation, the thickness of the evaporated metal during this batch processing is adjusted to cause the resonant frequency of each resonaton to be higher than the desired value. Each resonator islsubsequently fine tuned, as described more fully hereinafter, by evaporating additional metal onto an electrode previously laid down until the resonant frequency thereof is lowered to the desired value.

The-filter assembly 38 embodying this invention and illustrated in FIGS. 3 and 4 has a transfer function that is accurately modeled by the electrical equivalent circuit in FIG. 1. Filter assembly 38 comprises header 39; mounting rings 40 and 41 that support the coupled resonator's '16 and 17, respectively, which are formed on separate crystal wafers; spacers 42 and 43; and cover 44 Referring now to FIGS. 5 and 6, the header 39 comprisesva preformed copper disc or base 45 having a cylindrical groove 46 formed therein between radial mounting flange47 and central plate section 48. The surfaces of flange 47 and plate 48 are flat and in parallel planes.

Pairs of posts 49a and 49b and beaded pins 50a and 50b that extend through the wall of disc 45 are located on the same radius in groove 46. The posts, which may be made of stainless steel, are rigidly secured in the wall of disc 45 and are electrically connected thereto such as by brazing. As illustrated in'FIG. 6, the glass bead 51a is sealed to lead pin 50a and disc 45 to rigidly secure the pin in and electrically insulate it from the disc. Three depressions 52a, 52b and 52c, which are equally circumferentially spaced around groove 46 on the same radius asv the posts, are formed in the wall of disc 45. Thedepressions operate as stand-offs which maintain the portions of disc 45 adjacent the pins spaced from a printed circuit board (not shown) 'on which'filter 38 is mounted. After the pins and the posts are secured in disc 45, the header is nickel plated to prepare the surface of flange 47 for later cold \welding to the cover 44.

Since the mounting rings 40 and 41 are identical, only ring 40 will be referenced and described in detail. Referring now to FIGS. 7 and 8, ring 40 is preferably made of a ceramic such as alumina which is pressed into the desired shape and heated in a furnace to remove the binder therefrom. The center hole 55 in the ring has a diameter that is larger than that of wafer 21. The ring has a pair of shoulder sections 56 and 57 which are diametrically spaced apart on the same side thereof and raised above the thinner sections 58 and 59. Longitudinal grooves 60 and 61 are formed in the peripheries of sections 56 and 57, respectively. The outer diameter of the ring and positions of the longitudinal grooves therein are such that the ring slides smoothly between the header posts 49a and 4912 when thelatter are located in the grooves. A plurality of metallic electrodes 62-68, inclusive, are formed on one side of the circumference of sections 58 and 59. The electrodes 62-68 are formed by painting an electrically conductive silver paint such as is used in thick film circuits, for example, onto the ring and heating the painted ring to remove the binder from the paint. Lead wires 71-7.4 are then soldered to the associated conductive patterns 62, 63, 66 and 67, on the ring. A wire is also soldered to the ring electrodes 62 and 63 to provide the ground connection line 10. that is shown in FIG. 1. Alternatively, a single electrode (not shown) may be formed on the surface of the ring in place of the 'two electrodes 62 and 63 and both of the lead wires 71 and 72 connected thereto.

The'elect roded wafer 21 comprising coupled resonator 16 is mounted in ceramic ring 40 with the aid of holding fixture or jig 76, see FIGS. 9 and 10. Jig 76 comprises base 77 having a flat surface 78 thereon, annular flange 79 extending from the surface 78, and a pair of posts 80 and 81. The'inner diameter of the opening 82 of flange 79 is accurately sized to align the center point 36 of the crystal wafer with the longitudinal axis AA of the flange and has a keying flat 84 therein for orienting wafer 21 in the flange. The depth of the opening 82 in the flange is slightly less than the thickness of wafer 21. The height of the flange is slightly less than the thicknesses of the thinner sections 58 and 59 of the ring. Post 80 is rigidly secured in base 77 with respect to the center point 83 of flange 82 and the axis AA. Thus, the ring is approximately centered on flange 79 when the former isloaded in jig 76 with the longitudinal groove 60 securely pressed against post 80. Post 81 slides in base 77 and is spring loaded by spring 85. The longitudinal axes of posts 80 and 81 and the axis AA are aligned in the same plane containing the longitudinal axis of spring 85. The spacing between posts 80 and 81, when thespring is in its extended position, is less than the diameter on which grooves 60 and 61 in FIG. 7 are located. The base 77 and flange 79 have a cut-out section 86 in one side thereof. I

The ceramic ring 40 is loaded into jig 76 by moving post 81 toallow the ring to slip over flange 79 with the reference'post 80 in groove 60 and shoulders 56 and '57 away from the surface 78. Post 81 is then released into groove 61 to press the ring and groove 60 against post 80 to securely locate the ring on jig 76. Wafer 21 is then placed in the opening 82 of flange 79 with lead patterns 33 and 34 under the associated wires 73 and 74, lead patterns 31 and 32 over the associated wires 71 and 72, and the wafer flat 35 contacting the flat 84 on jig 76. The center point 36 of wafer 21 is now accurately positioned in ring with respect to groove by mechanically locating on the circumference of the wafer. A cap 87 is slid over the posts and 81 to hold the wafer in place when the jig is inverted and the wires 71-74 are soldered to the associated leads 31-34. The cut-out section 86 of the jig base and flange provides an open space for soldering the wires 71 and 72 to the associated leads 31 and 32 on the underside of wafer 21. Since the wafer is accurately located in the ring with respect to the longitudinal groove 60, alignment of the wafer and resonators hereinafter for tuning, testing and assembly may be done with respect to this groove. This greatly simplifies fabrication of the filter assembly shown in FIGS. 3 and 4 as is described more fully hereinafter and eliminates the need for sophisticated optical equipment and locating with respect to the wafer which is a delicate object.

In accordance with this invention, the resonators are fine tuned with the aid of a masking jig 90, see FIGS. 1 1 and 12, while the crystal wafer 21 supporting resonator 16 is mounted in ring 40. The wafer and ring are also shown in phantom in FIGS. 11 and 12. Jig 90 is similar to jig 76 and comprises base 91 having a flat top surface 92, cylindrical flange 93 extending from the surface 92, a pair of rectangular openings 94 and 95 extending through the jig parallel to the axis B-B thereof, and a pair of posts 96 and 97. The bottom surface 98 of base 91 is milled to fonn a rectangular section 99 therein. Post 96 is rigidly secured in base 91 with respect to the center point 93 of flange 93 and the axis B-B as was post 80 in jig 76. Post 97 is also movably secured in base 91 and held under compression by spring 100 as was the other post 81 in jig 76. The ring 40, with wafer 21 mounted therein, is loaded into jig 90 as it was in jig 76 except that the shoulders 56 and 57 of the ring are now in contact with the surface 92. Spring loaded pin electrodes 101-104 are dielectrically mounted in the top of base 91, as viewed in FIG. 11, for contacting the electrodes 62, 63, 66 and 67, respectively, on ring 40. Pin electrodes 105-108 are rigidly dielectrically mounted on the bottom of base 91 and are electrically connected to the associated pins 101-104. The rectangular openings 94 and 95 in base 91 are the same size as the electrodes 27-30 on the wafer and are spaced the same distance from the axis B-B as were the open ings in the pattern that was used in the batch processing to initially evaporate the metal electrode patterns onto the wafer. Thus, the electrodes 27 and 28 on one surface of the wafer (the center point 36 of the wafer being aligned with the aid of posts 80 and 96 and groove 60 with the center point 93' and axis BB) are aligned with the mask openings 94 and 95, respectively. The height of flange 93 is slightly less than the difference between the thicknesses of sections 57 and 58 of ring 40 for shadowing wafer 21 to permit evaporation of metal through the openings 94 and 95 only onto the associated electrodes 27 and 28. A plug 109 is selectively placed in hole 94 or 95 to block metal evaporated toward the holes from the associated electrode 27 or 28.

Referring now to FIG. 13, apparatus for fine tuning the resonant frequency of a resonator comprises a vacuum chamber including a bell jar 112 on platform 113;

a vacuum pump 114 for evacuating the bell jar; a power source 115 connected to a heater filament 116 on which a gold wire is placed; a platform 117 supported by a rod 118 which is secured to the platfonn 113; an oscillator and a frequency meter 121. The resona- 6 tor assembly is mounted in jig 90 as illustrated in FIGS. 11 and 12 with plug 109 blocking the hole 95 for example. Jig 90 is then placed on platform 117 with flange 99 in the hole 119 in the. platform. A first pair of terminals on oscillator 120 are connected through lines 123 and 124 to the pins 106 and 107, respectively, and thus to the associated spring loaded electrodes 102 and 103 and lead patterns 32 and 33. This connects the resonator formed by electrodes 27 and 30 as part of the frequency determining circuit of oscillator 120. A second pair of terminals on the oscillator are connected through lines 125 and 126 to frequency meter 121.

In operation, the chamber is evacuated, the oscillator and frequency meter are energized, and the operating frequency of the oscillator is monitored. Power from source 115 is then applied to filament 116 to vaporize the gold which migrates toward platform 1 17 and is deposited on electrode 27. This additional metal deposited on electrode 27 decreases the resonant frequency of the associated resonator and accordingly changes the operating frequency of the oscillator. When the operating frequency of the oscillator changes to a prescribed value, indicating that the resonant frequency of the resonator is at a predetermined value, frequency meter 121 produces an output signal on line 127 which shuts off power source 115. The other resonator on wafer 21 is fine tuned in a similar manner after placing the plug 109 in the opening 94 and connecting wires 123 and 124 to the other pins 105 and 108.

The spacers '42 and 43 in FIGS. 3 and 4 are identical. Only the spacer 42 will be referenced hereinafter therefore and described in detail. Referring now to FIG. 14, spacer 42 comprises a central body section 128, tabs 129-132, and a pair of extensions 133 and 134 each having an associated rectangularly shaped opening 135 and 136 extending therethrough. The spacers may, by way of example, be made of copper. The centers of the openings 135 and 136 are located on the same radius as, and have the same spacings as, post 49a and 49b. The spacer body 128 is shaped so that it overlaps the hole 55 in ring 40 and that the periphery thereof is within that of the ring when the openings 135 and 136 are aligned with the grooves 60 and 61, respectively, see FIG. 7. The length of tab 131 is greater than the difference between the thicknesses of the sections 56 and 58 of ring 40. The lengths of tabs 129, and 132 are approximately equal to the thickness of the ring sections 58. The cutout section 137 between tabs 129 and 130 is formed on the spacer body to separate the periphery thereof from the electrodes 66 and 67 on ring 40 when the spacer and ring are stacked with longitudinal grooves 60, 61 and the associated aperatures 135, 136 in alignment.

The filter package illustrated in FIGS. 3 and 4 is assembled by stacking spacer 42 on the header with the posts 49a and 49b in the holes and 136, respectively, of the spacer and the tabs 131 and 132 facing into the paper in FIG. 3. Ring 40 is then stacked on the header with the posts 49a and 49b in the grooves 60 and 61, respectively, and the electrodes 62 and 63 also facing into the paper in FIG. 3. In a similar manner spacer 43 and ring 41 are stacked on the header in alignment with the posts 49a and 49b. The extensions 133 and 134 of both of the spacers are preferably soldered to the associated posts 49a and 49b at the aperatures in the former to ground the spacers to the header. The grounded spacer 43 provides radio frequency shielding between adjacent coupled resonators and via the tabs 131 and 132 they provide a means of ward (as viewed in FIG. 3) and soldered to the electrodes 65 and 68, respectively, of the adjacent ring. Similarly, the tabs 131 and 132 are bent downward and upward, respectively, (as viewed in FIG. 4) and soldered to the electrodes 62 and 63, respectively, of the adjacent rings. A wire 139 (see FIG. 3) is soldered to the electrodes 66 of rings 40 and 41 to form the line 22 which interconnects the resonators 16v and 17 in FIG. 1. A chip capacitor 140 (see FIG. 3) which corresponds to the associated capacitor 7 in FIG. 1 is soldered to the electrodes 65 and 66 on ring 41. A wire 141 is soldered between the electrode 67 on ring 40 and pin 50a so that the latter corresponds to the filter terminal 23 in FIG. 1. A wire 142 is also soldered between the electrode 67 on ring 41 (see FIG. 3) and the other pin 50bin the header (see FIG. 4) so that this pin corresponds to the other filter terminal 24 in FIG. 1. The wire 142 may be soldered to the floating electrode 64 on ring 41 in order to restrict movement of this wire. The wire 142 is bent up in the air where it passes over the wafer in ring 41 to prevent its contacting the electrodes on the wafer. The cover 44 has a flange 143 that is cold welded to header flange 47 to hermetically seal the packaged filter.

There are many advantages obtained through the use of this invention. A bandpass filter may comprise four or more coupled resonators. In accordance with this invention, each coupled resonator is formed on a different crystal wafer which is mounted in an associated ceramic ring. Each resonator is then individually tested and fine tuned. If one of the resonators is defective it can be identified prior to fabrication of a complete filter. It is then only necessary to scrap the one coupled resonator and wafer. This greatly reduces the cost of manufacturing crystal filters since a single component part may now be scrapped rather thanall of the resonators in the filter. This invention also facilitates the manufacture of filters having different response characteristics. The parts such as the header 39, ceramic rings 40, wafers 21, spacers 42 and cover 44 that are used to construct any filter are the same. It is only necessary to change the conductive patterns on the wafers to produce a filter having a different frequency response characteristic. This means that common jigging may be used for making different filters by using appropriate mask inserts (not shown) in the center of jig 90. This greatly simplifies the manufacture of filters. By way of example, a filter having a steeper skirt selectively is obtained merely by stacking more spacers and resonator assemblies onto the header and making the appropriate connections thereto. Also, no elaborate alignment is required for tuning each crystal.

Although this invention was described in relation to a preferred embodiment thereof, changes, modifications 8 and improvements therein will be obvious to one skilled in the art without departing from the spirit of the invention. By way of example, the ceramic ring 40 may be a rectangular frame having a similarly shaped hole therein. The crystal wafer 21 may also have a rectangular or other shape. Also, the hole 55 in ring 40 may be a bore in one end thereof. This would necessitate only a slight change in the shape of the ring and minor modification of the tooling required to secure the wafer in the ring. Although the wires are stated to be connected to electrodes by soldering, they also can be connected thereto by other means such as ultrasonic bonding. Jig is shown as including a plug 109 which is manually placed mom of the holes 94 or 95 in the masking jig. This operation of masking one of the resonator electrodes of a coupled resonator may be accomplished automatically by relative movement of an aperatured overlay between the filament 116 and the base 99 of jig 90 in platform 117 to expose the holes 94 and 95 one at a timefThe relative movement of the overlay may also automatically connect the correct one of the electrode pairs 106, 107 and 105, 108 to the oscillator 120. The scope of this invention is therefore defined by the appended claims rather than by the preceding description of the best mode for practicing the invention.

We claim:

1. The method of fabricating stackable resonator assemblies, each assembly including a piezoelectric crystal body having a conductive pattern formed on each of the two opposing major faces thereof with overlapping body patterns and having lead patterns connected to the body patterns, the patterns being formed on the crystal faces with respect to a first reference point on the crystal faces by locating the crystal body on the circumference thereof and adielectric frame having an opening therethrough for receiving the crystal body, having a second reference point thereon that is spaced from the opening, and having a plurality of metallic electrodes formed on the end of the frame adjacent the opening therethrough: comprising the steps of placing a crystal body in the opening through an associated frame with the crystal spaced from the frame to expose the conductive patterns on both sides of the crystal,

positioning the first reference point on each crystal body which is in the opening in each associated dielectric frame to be at the same distance from the second reference point; and

positioning each crystal body in the opening to make the conductive patterns thereon have the same ori- I entation with respect to the second reference point on the frame.

2. The method according to claim 1 including the additional step of registering on the circumference of the crystal body for orienting the conductive patterns in the opening in the frame.

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Referenced by
Citing PatentFiling datePublication dateApplicantTitle
US4246554 *Dec 11, 1978Jan 20, 1981E-Systems, Inc.Inductorless monolithic crystal filter network
US4297659 *Dec 10, 1979Oct 27, 1981Telefonaktiebolaget L M EricssonCrystal filter structure
US4433316 *Aug 28, 1981Feb 21, 1984General Electric CompanyCrystal filter and method for fabrication
US4453104 *May 12, 1982Jun 5, 1984Motorola, Inc.Low-profile crystal package with an improved crystal-mounting arrangement
US4524497 *Feb 15, 1984Jun 25, 1985Motorola, Inc.Method of making a low-profile crystal package with an improved crystal-mounting arrangement
US5294862 *Jul 16, 1992Mar 15, 1994Ngk Spark Plug Co., Ltd.Ladder-type piezo-electric filter
US5872493 *Mar 13, 1997Feb 16, 1999Nokia Mobile Phones, Ltd.Bulk acoustic wave (BAW) filter having a top portion that includes a protective acoustic mirror
US5873154 *Oct 17, 1996Feb 23, 1999Nokia Mobile Phones LimitedMethod for fabricating a resonator having an acoustic mirror
US5910756 *May 21, 1997Jun 8, 1999Nokia Mobile Phones LimitedFilters and duplexers utilizing thin film stacked crystal filter structures and thin film bulk acoustic wave resonators
US5945774 *Mar 28, 1997Aug 31, 1999Industrial Technology Research InstituteOpen package for crystal oscillator chips
US6051907 *Oct 10, 1996Apr 18, 2000Nokia Mobile Phones LimitedMethod for performing on-wafer tuning of thin film bulk acoustic wave resonators (FBARS)
US6081171 *Apr 8, 1998Jun 27, 2000Nokia Mobile Phones LimitedMonolithic filters utilizing thin film bulk acoustic wave devices and minimum passive components for controlling the shape and width of a passband response
US6191475 *Nov 26, 1997Feb 20, 2001Intel CorporationSubstrate for reducing electromagnetic interference and enclosure
US6839946Oct 22, 2002Jan 11, 2005Nokia CorporationMethod for fabricating a thin film bulk acoustic wave resonator (FBAR) on a glass substrate
US8291559 *Feb 24, 2009Oct 23, 2012Epcos AgProcess for adapting resonance frequency of a BAW resonator
US20100212127 *Feb 24, 2009Aug 26, 2010Habbo HeinzeProcess for Adapting Resonance Frequency of a BAW Resonator
WO1998015984A1 *Sep 12, 1997Apr 16, 1998Nokia Mobile Phones IncMethod for tuning thin film fbars
Classifications
U.S. Classification29/25.35, 310/341, 310/312, 333/189, 310/353
International ClassificationH03H9/58, H03H3/00, H03H9/00, H03H3/04, H03H9/10, H03H3/02, H03H9/05
Cooperative ClassificationH03H9/58, H03H9/0528, H03H9/1014
European ClassificationH03H9/58, H03H9/10B1, H03H9/05A3
Legal Events
DateCodeEventDescription
Feb 28, 1989ASAssignment
Owner name: AG COMMUNICATION SYSTEMS CORPORATION, 2500 W. UTOP
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:GTE COMMUNICATION SYSTEMS CORPORATION;REEL/FRAME:005060/0501
Effective date: 19881228