|Publication number||US4672243 A|
|Application number||US 06/738,593|
|Publication date||Jun 9, 1987|
|Filing date||May 28, 1985|
|Priority date||May 28, 1985|
|Also published as||CA1252521A, CA1252521A1, CN1005674B, CN86103513A, DE3673342D1, EP0223786A1, EP0223786B1, WO1986007220A1|
|Publication number||06738593, 738593, US 4672243 A, US 4672243A, US-A-4672243, US4672243 A, US4672243A|
|Inventors||Howard C. Kirsch|
|Original Assignee||American Telephone And Telegraph Company, At&T Bell Laboratories|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (13), Referenced by (39), Classifications (8), Legal Events (5)|
|External Links: USPTO, USPTO Assignment, Espacenet|
1. Technical Field
The present inventin relates to a TTL to CMOS input buffer and, more particularly, to a TTL to CMOS input buffer wherein a transition detector and an additional pair of MOS devices are included in the circuit to prevent current flow through the buffer circuit.
2. Description of the Prior Art
For many applications, it is desirable to provide a circuit which is capable of interfacing between transistor-transistor logic (TTL) levels and complementary MOS (CMOS) logic levels. In particular, TTL logic levels are nominally +2.4 V for a logic "1" and 0.4 V for a logic "0", and the associated CMOS levels are nominally +5.0 V and 0.0 V. The conventional interface circuit, also referred to in the art as an "input buffer circuit", comprises a p-channel MOS transistor and an n-channel MOS transistor connected in series between a positive power supply VDD (usually 5 V) and ground. The gates of the devices are connected together and responsive to the TTL input signal. The drains of the transistors are also connected together and provide the CMOS output signal. This arrangement is considered in the art as a typical CMOS inverter circuit. In the ideal situation, one transistor of the pair will always be "off", preventing any current to flow through the pair of transistors from VDD to ground. However, this is not always the case. In particular, problems arise at the TTL input level for a logic "1", 2.4 V, and when the TTL input level for a logic "0" is somewhat greater than 0.4 V, for example, 0.8 V. At these levels, the both transistors may be "on" and a current will flow through the transistor pair to ground.
There are many arrangements which exist in the prior art to solve this problem. One particular solution is disclosed in U.S. Pat. No. 4,471,242 issued to G. E. Noufer et al on Sept. 11, 1984. The current flow through the devices is eliminated in this arrangement by introducing a reference voltage to match the lowest level of a logic "1" of the TTL input signal. This reference voltage is utilized in place of VDD as the supply voltage to the p-channel transistor, thus preventing the p-channel transistor from turning "on" when its gate voltage is at the lowest TTL logic "1" input level. A problem with this arrangement, however, is that by reducing the supply voltage of the p-channel transistor, the operating range of the buffer circuit is also restricted. By lowering the voltage available to operate the transistors, therefore, the device will be inherently slower. For many applications, this is not acceptable.
As an alternative solution, the actual sizes of the p- and n-channel transistors may be modified to prevent the static current flow. However, this solution is not practical since it requires additional masking levels and, therefore, additional processing time. Further, it is difficult with this method to accurately control the device sizes so as to reproducibly provide the necessary threshold voltage.
Therefore, a need remains in the prior art for a TTL to CMOS input buffer which will not draw any static current, does not require additional processing steps, and is capable of operating over the entire 0-5 V CMOS power supply level.
The problems associated with the prior art have been solved in accordance with the present invention which relates to a TTL to CMOS input buffer and, more particularly, to a TTL to CMOS input buffer which utilizes a transition detector and an additional pair of MOS devices to prevent static current flow when the TTL logic "1" input signal is at relatively low levels.
It is an aspect of the present invention to utilizes a pair of p-channel MOS transistors connected in series between the positive power supply and the gates of a first CMOS inverter to control the gate-to-source voltage of the p-channel transistor included in the inverter and maintain the p-channel transistor in the "off" state for low logic "1" input levels.
A further aspect of the present invention is to provide the TTL input signal as an input to the transition detector, where the output from the transition detector is applied as the gate input to one of the additional p-channel transistors.
Other and further aspects of the present invention will become apparent during the course of the following discussion and by reference to the accompanying drawings.
Referring now to the drawings,
FIG. 1 illustrates a simple prior art CMOS inverter which may be utilized to shift TTL logic level input signals to CMOS logic level output signals;
FIG. 2 is a graph illustrate the voltage transfer function, as well as static current flow, for the device illustrated in FIG. 1; and
FIG. 3 illustrates an exemplary TTL to CMOS input buffer without static current flow formed in accordance with the present invention.
As stated above, a conventional TTL input buffer for a CMOS circuit essentially includes a CMOS inverter. One such prior art CMOS input buffer 10 is illustrated in FIG. 1. Input buffer 10 includes a p-channel MOS transistor 12 and an n-channel MOS transistor 14 connected in series between a positive power supply (denoted VDD) and a negative power supply, presumably, ground. The gates of transistors 12 and 14 are connected together and receive as an input signal VIN, the TTL input logic signal. Similarly, the drains of transistors 12 and 14 are connected together and provide the CMOS logic output signal, here denoted VOUT. As shown in FIG. 1, a logic "0" to a logic "1" transition in TTL relates to a step change in voltage from approximately 0.4 V to approximately 2.4 V. In operation, when the input signal is at the logic "0" value, p-channel transistor 12 will be turned "on" and n-channel transistor 14 will be turned "off". Therefore, the voltage at node 0 will be approximately the positive supply voltage VDD, where VDD is typically 5 V. When the TTL input signal is a logic "1", transistor 12 will be turned less "on", transistor 14 turned "on", and the voltage at node 0 will drop to near 0 V, or ground. FIG. 2 illustrates the transfer function (VOUT vs VIN) of the circuit illustrated in FIG. 1. Referring to the transfer function, when VIN is equal to 0 V VOUT will be at its maximum potential of VDD, or 5 V. As VIN approaches 1.6 V, both transistors 12 and 14 will be turned "on", and VOUT will switch from VDD to ground. As can be seen by reference to FIG. 2, the switch is not instantaneous, and there exists a predetermined voltage interval wherein VIN provides a sufficient gate voltage to both transistors so as to override their respective threshold voltages. This is the interval wherein static current will flow from VDD through transistors 12 and 14 to ground. A representation of this static current, denoted id, is also illustrated in FIG. 2. As stated above, it is necessary in many applications to reduce, or even better, eliminate, this current flow. To achieve this, therefore, it is necessary to ensure that both transistors forming the CMOS inverter are never in conduction at the same time.
Shown in FIG. 3 is a TTL to CMOS input buffer 20 formed in accordance with the present invention which eliminates the static current flow is through the p-channel and n-channel transistors. In general, input buffer 20 comprises a first CMOS inverter 30, a second CMOS inverter 38, a transition detector 44, and a voltage boosting circuit 50. The TTL logic input signal VIN is applied as an input to the first CMOS inverter 30 via an n-channel transistor 22, where the source of transistor 22 is connected to receive input signal VIN. The gate of transistor 22 is controlled by a reference voltage Vref, and the drain of transistor 22 is connected to the input of first CMOS inverter 30, where this connection is illustrated as node A in FIG. 3. First CMOS inverter 30 comprises, as shown in FIG. 3 a p-channel transistor 32 and an n-channel transistor 34 connected in series between the positive power supply VDD and ground. The gates of transistors 32 and 34 are coupled together and connected to the drain of transistor 22 at node A. The drains of transistors 32 and 34 are also coupled together and provide the output of first inverter 30 at node B, where this output signal is defined as VOUT1. Output signal VOUT1 is provided at essentially VDD when input signal VIN is a logic "0" and at essentially ground when input signal VIN is a logic "1".
The output of first CMOS inverter 30 is subsequently applied as an input to second CMOS inverter 38. Second CMOS inverter 38 is similar in structure to first CMOS inverter 30 and comprises a p-channel transistor 40 and an n-channel transistor 42 connected between VDD and ground. The output of second CMOS inverter 38, denoted VOUT2, will be the opposite of the output from first CMOS inverter 30. In general, the portion of the circuit described thus far can be considered as a standard TTL to CMOS buffer well known in the art. For the purposes of discussion, the operation of this circuit will be briefly described before discussing the enhancement in circuit performance achieved as a result of the additional circuitry of the present invention.
When input signal VIN is a logic "1", transistor 22 must be "off". Therefore, the reference voltage Vref is chosen to ensure that transistor 22 will remain "off" when the TTL input signal is at its lowest logic "1" value of approximately 2 V. Thus, the input to first inverter 30 at node A will be approximately 1.8 V, including some noise margin. One of the advantages of utilizing transistor 22 that the input inverter transistors 32 and 34 do not have to be ratioed to accept TTL input levels, since device 22 enables node A to go fully to VCC. This logic "1" value turns "on" n-channel transistor 34 and turns "off" p-channel transistor 32, pulling the voltage appearing at node B, VOUT1, to ground. Consequently, this logic "0" value of VOUT1 is applied as the input to second inverter 38, turning p-channel transistor 40 "on" and n-channel transistor 42 "off" and bringing the value of output signal VOUT2 to essentially VDD, or logic "1". In summary, therefore, when the TTL input signal VIN is a logic "1", VOUT1 will be a logic "0" and VOUT2 will be a logic "1", where the actual values of VOUT1 and VOUT2 will be the CMOS voltage levels of ground (0 v) and VDD (5 V), respectively. Similarly, when input signal VIN is a logic "0", transistor 32 of first inverter 30 will turn "on" and transistor 34 will turn "off", thus bringing the voltage at node B from up from ground to essentially VDD, the CMOS logic "1" level. In turn, this logic "1" input to second inverter 38 will turn transistor 40 "off" and transistor 42 "on", bringing the output of second inverter 38 down from VDD to ground, the CMOS logic "0" level.
As briefly stated above in association with FIG. 1, the problem arises when the TTL input signal VIN is at its lowest logic "1" value of 2 V. Under this condition, both transistors 32 and 34 will be "on" and will draw a current is from VDD to ground. Under some circumstances, this current may reach a value of 3 A, which is not acceptable for many situations. To avoid this situation, therefore, it is necessary to bring the TTL logic "1" input voltage of 2 V appearing at node A up to a level which is sufficient to ensure that p-channel transistor 32 will be completely turned "off". This solution is provided in accordance with the present invention by including a transition detector 44 and a voltage boosting circuit 50 in input buffer 20.
Transistor detector 44 comprises a p-channel transistor 46 and an n-channel transistor 48. The source of transistor 46 is connected to VDD, the drain is connected to the drain of transistor 48, and the gate is coupled to receive the output signal VOUT2 from second inverter 38. The source of transistor 48 is connected to ground and the gate of transistor 48 is coupled to receive the TTL input signal VIN. The output of transition detector 44, denoted VTRANS, will appear at node D, the interconnected drain terminals of transistors 46 and 48. Voltage boosting circuit 50, as shown in FIG. 3, comprises a pair of p-channel transistors 52 and 54 connected in series between VDD and node A, the input to first inverter 30. In particular, the source of transistor 52 is connected to VDD, the drain of transistor 52 is connected to the source of transistors 54, and the drain of transistor 54 is connected to node A. The gate of transistor 52 is controlled by output signal VOUT2 from second inverter 38 and the gate of transistor 54 is controlled by output signal VTRANS from transition detector 44. As seen be reference to FIG. 3, a delay element 56 is included in boosting circuit 50, where the purpose of this device will be explained in detail below.
As previously discussed, conventional TTL to CMOS input buffers will draw a static current Id when the TTL input signal makes a logic "0" to a logic "1" transition, where the logic "1" signal is of insufficient magnitude to turn "off" the p-channel transistor of the CMOS inverter. In accordance with the operation of the present invention, when VIN moves from a logic "0" to a logic "1" value, transistor 48 of transition detector 44 will turn "on", bringing the output VTRANS of detector 44 to ground. This CMOS logic "0" value of VTRANS is subsequently applied as the gate input of p-channel transistor 54, turning "on" transistor 54. At this point in time, the signal appearing at the gate of p-channel transistor 52 will also be at ground, since the TTL input transition from logic "0" to logic "1" has not yet propagated through delay element 56. Therefore, once transistor 54 is activated, node A will be brought up from the TTL logic "1" value of approximately 2 V towards the full VDD CMOS logic "1" level. Thus, with node A sufficiently above the threshold of p-channel transistor 32, transistor 32 will remain "off" and no current will flow through first inverter 30. As can be seen from the above description, delay element 56 (which may simply comprise a pair of CMOS inverters) functions to ensure that transistor 52 will not be turned "off" (by the transition of V.sub. OUT2 from "0" to "1" in association with the identical transition of input signal VIN) until transistor 54 has been "on" long enough to bring the voltage at node A to a level which will turn transistor 32 "off". It is been determined that a delay of approximately 10-15 nsec is sufficient for this purpose.
Once the logic "1" value of VOUT2 has propagated through delay element 56 and reaches the gate of transistor 52, transistor 52 will be turned "off", thereby disconnecting node A from VDD. Transistor 52 is turned "off" so that when input signal VIN makes its next transition from logic "1" to logic "0", node A is not actively held at VDD, where that condition would draw current from the TTL input source, which is not desirable. Also, it would considerably slow down the "1" to "0" transition time and thus decrease the operating speed of input buffer 20.
A problem may be encountered when the input signal VIN remains at a logic "1" value for a considerable length of time. Under these circumstances, the voltage at node A may decay to a level which would allow p-channel transistor 32 to turn "on" and static current to flow through inverter 30. To alleviate this problem, a p-channel leakage transistor 60 may be included in first inverter 30 of input buffer 20 as shown in FIG. 3. Leakage transistor 60 is connected at its source to VDD, and the drain of transistor 60 is connected to node A. The gate of transistor 60 is connected to node B, thus transistor 60 will turn "on" when output signal VOUT1 is at a logic "0" value. By design, transistor 60 is made to be extremely small, and will therefore not interfere with the operation of voltage boosting circuit 50. However, after transistor 52 has been "off" for a given length of time, transistor 60 will provide a path for leakage current so that static current will not flow from VDD through transistors 32 and 34 to ground. Due to its extremely small size, the current flow through leakage transistor 60 is considered negligible.
In summary, the present invention comprises a TTL to CMOS input buffer with virtually no static current flow. This condition is achieved by utilizing a transition detector in association with a voltage boosting circuit to provide a voltage at the input of a first CMOS inverter which will keep the p-channel transistor of the inverter "off" regardless of the voltage level of the TTL logic "1" input signal.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US955006 *||Jan 27, 1909||Apr 12, 1910||Joseph Everett Sparks||Abdominal retractor.|
|US3675144 *||Sep 4, 1969||Jul 4, 1972||Rca Corp||Transmission gate and biasing circuits|
|US4258272 *||Mar 19, 1979||Mar 24, 1981||National Semiconductor Corporation||TTL to CMOS input buffer circuit|
|US4408136 *||Dec 7, 1981||Oct 4, 1983||Mostek Corporation||MOS Bootstrapped buffer for voltage level conversion with fast output rise time|
|US4437025 *||Jul 29, 1981||Mar 13, 1984||Intel Corporation||MOS Buffer for receiving TTL level signals|
|US4438352 *||Aug 17, 1982||Mar 20, 1984||Xerox Corporation||TTL Compatible CMOS input buffer|
|US4463273 *||Oct 26, 1981||Jul 31, 1984||Rca Corporation||Electronic circuits and structures employing enhancement and depletion type IGFETs|
|US4471242 *||Dec 21, 1981||Sep 11, 1984||Motorola, Inc.||TTL to CMOS Input buffer|
|US4475050 *||May 5, 1983||Oct 2, 1984||Motorola, Inc.||TTL To CMOS input buffer|
|US4490633 *||Dec 28, 1981||Dec 25, 1984||Motorola, Inc.||TTL to CMOS input buffer|
|US4501978 *||Nov 24, 1982||Feb 26, 1985||Rca Corporation||Level shift interface circuit|
|US4574273 *||Nov 4, 1983||Mar 4, 1986||Tokyo Shibaura Denki Kabushiki Kaisha||Circuit for changing the voltage level of binary signals|
|US4584491 *||Jan 12, 1984||Apr 22, 1986||Motorola, Inc.||TTL to CMOS input buffer circuit for minimizing power consumption|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US4827159 *||Jun 5, 1987||May 2, 1989||Fujitsu Limited||High power buffer circuit with low noise|
|US4896056 *||Oct 5, 1988||Jan 23, 1990||Kabushiki Kaisha Toshiba||Semiconductor IC including circuit for preventing erroneous operation caused by power source noise|
|US4926070 *||Dec 30, 1988||May 15, 1990||Kabushiki Kaisha Toshiba||Voltage level converting circuit|
|US4980583 *||Jan 3, 1989||Dec 25, 1990||National Semiconductor Corporation||CMOS level shift circuit with active pull-up and pull-down|
|US4985868 *||Dec 14, 1989||Jan 15, 1991||Fujitsu Limited||Dynamic random access memory having improved refresh timing|
|US4999529 *||Jun 30, 1989||Mar 12, 1991||At&T Bell Laboratories||Programmable logic level input buffer|
|US5084637 *||May 30, 1989||Jan 28, 1992||International Business Machines Corp.||Bidirectional level shifting interface circuit|
|US5151622 *||Nov 6, 1990||Sep 29, 1992||Vitelic Corporation||CMOS logic circuit with output coupled to multiple feedback paths and associated method|
|US5304867 *||Dec 12, 1991||Apr 19, 1994||At&T Bell Laboratories||CMOS input buffer with high speed and low power|
|US5311075 *||Aug 13, 1992||May 10, 1994||Sony Corporation||Level shifting CMOS integrated circuits|
|US5319262 *||Feb 10, 1993||Jun 7, 1994||International Business Machines Corporation||Low power TTL/CMOS receiver circuit|
|US5406139 *||Mar 19, 1993||Apr 11, 1995||Advanced Micro Devices, Inc.||Input buffer utilizing a cascode to provide a zero power TTL to CMOS input with high speed switching|
|US5703500 *||May 15, 1996||Dec 30, 1997||Micron Technology, Inc.||Threshold voltage scalable buffer with reference level|
|US5847576 *||Nov 7, 1996||Dec 8, 1998||Lucent Technologies Inc.||Low power, variable logic threshold voltage, logic gates|
|US5861763 *||Aug 22, 1997||Jan 19, 1999||Micron Technology, Inc.||Threshold voltage scalable buffer with reference level|
|US5945844 *||Aug 20, 1998||Aug 31, 1999||Micron Technology, Inc.||Threshold voltage scalable buffer with reference level|
|US5955893 *||Dec 16, 1996||Sep 21, 1999||Macronix International Co., Ltd.||Power saving buffer circuit buffer bias voltages|
|US6002618 *||Nov 11, 1998||Dec 14, 1999||Creative Integrated Systems||NMOS input receiver circuit|
|US6087854 *||Sep 2, 1998||Jul 11, 2000||Lattice Semiconductor Corporation||High speed line driver with direct and complementary outputs|
|US6307234 *||Nov 12, 1998||Oct 23, 2001||Nec Corporation||Complementary MOS semiconductor device|
|US6323685||Jul 27, 1999||Nov 27, 2001||Micron Technology, Inc.||Threshold voltage scalable buffer with reference level|
|US6323701 *||Dec 28, 1998||Nov 27, 2001||Cypress Semiconductor Corporation||Scheme for reducing leakage current in an input buffer|
|US6559691 *||Oct 1, 2001||May 6, 2003||Fujitsu Limited||Voltage level converting circuit|
|US6635934 *||Feb 6, 2001||Oct 21, 2003||Mitsubishi Denki Kabushiki Kaisha||Semiconductor integrated circuit device operating with low power consumption|
|US6771110 *||Feb 25, 2003||Aug 3, 2004||Lsi Logic Corporation||Inverting level shifter with start-up circuit|
|US6911703||Oct 8, 2003||Jun 28, 2005||Renesas Technology Corp.||Semiconductor integrated circuit device operating with low power consumption|
|US7109755 *||Oct 27, 2004||Sep 19, 2006||Intel Corporation||Power delivery noise cancellation mechanism|
|US7521762||May 11, 2005||Apr 21, 2009||Renesas Technology Corp.||Semiconductor integrated circuit device operating with low power consumption|
|US7768296 *||Feb 23, 2006||Aug 3, 2010||Freescale Semiconductor, Inc.||Electronic device and method|
|US20040071026 *||Oct 8, 2003||Apr 15, 2004||Mitsubishi Denki Kabushiki Kaisha||Semiconductor integrated circuit device operating with low power consumption|
|US20050212560 *||May 11, 2005||Sep 29, 2005||Renesas Technology Corp.||Semiconductor integrated circuit device operating with low power consumption|
|US20050283429 *||Jun 17, 2004||Dec 22, 2005||Bates Michael R||Scored negative file system and method|
|US20060087338 *||Oct 27, 2004||Apr 27, 2006||Garmatyuk Dmitriy S||Power delivery noise cancellation mechanism|
|US20070194804 *||Feb 23, 2006||Aug 23, 2007||Freescale Semiconductor, Inc.||Electronic device and method|
|US20090179692 *||Mar 13, 2009||Jul 16, 2009||Renesas Technology Corp.||Semiconductor integrated circuit device operating with low power consumption|
|EP0529545A1 *||Aug 21, 1992||Mar 3, 1993||Sony Corporation||Level shifting CMOS integrated circuits|
|EP0546702A1 *||Nov 20, 1992||Jun 16, 1993||AT&T Corp.||CMOS input buffer with high speed and low power|
|EP0557668A1 *||Feb 26, 1992||Sep 1, 1993||International Business Machines Corporation||Low power TTL/CMOS receiver circuit|
|EP0616431A1 *||Feb 24, 1994||Sep 21, 1994||Advanced Micro Devices Inc.||Input buffer utilizing a cascode|
|U.S. Classification||326/71, 326/88|
|International Classification||H03K19/00, H03K19/0185|
|Cooperative Classification||H03K19/018521, H03K19/0013|
|European Classification||H03K19/0185B4, H03K19/00P4|
|May 28, 1985||AS||Assignment|
Owner name: BELL TELEPHONE LABORATORIES , INCORPORATED, 600 MO
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:KIRSCH, HOWARD C.;REEL/FRAME:004411/0360
Effective date: 19850528
|Nov 24, 1987||CC||Certificate of correction|
|Nov 2, 1990||FPAY||Fee payment|
Year of fee payment: 4
|Oct 28, 1994||FPAY||Fee payment|
Year of fee payment: 8
|Oct 1, 1998||FPAY||Fee payment|
Year of fee payment: 12