|Publication number||US4835578 A|
|Application number||US 07/139,791|
|Publication date||May 30, 1989|
|Filing date||Dec 30, 1987|
|Priority date||Jan 16, 1987|
|Publication number||07139791, 139791, US 4835578 A, US 4835578A, US-A-4835578, US4835578 A, US4835578A|
|Inventors||Tsukuru Ohtoshi, Kazuhisa Uomi, Tadashi Fukuzawa, Naoki Chinone|
|Original Assignee||Hitachi, Ltd.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (4), Referenced by (23), Classifications (40), Legal Events (6)|
|External Links: USPTO, USPTO Assignment, Espacenet|
The present invention relates to a semiconductor device having a quantum wire that can be easily formed and that exhibits excellent characteristics, as well as to a method of producing the same.
Among the semiconductor devices, it can be theoretically expected that a quantum wire laser exhibits lower threshold value of oscillation and better temperature characteristics than those of the conventional double-heterostructure lasers and quantum well lasers. This has been mentioned in, for example, (1) M. Asada et al., Japanese Journal of Applied Physics, 24 (1985), L91, and (2) Y. Arakawa et al., Applied Physics Letters, 40 (1982), 939. Further, a built-in quantum wire without magnetic field has been reported in (3) P. M. Petroff et al., Applied Physics Letters, 41 (1982), 635. However, the structure for emitting light by the injection of carriers has not yet been known. None of the quantum wire light-emitting element of the type of carrier injection or the quantum wire device has yet been realized due to the fact that the thickness of the quantum wire element must be controlled to be smaller than de Broglie's wave length (about 200 angstroms) in both the direction of the film thickness and the direction perpendicular to the direction of the film thickness, involving great difficulty.
The object of the present invention is to provide a semiconductor device having a quantum wire that can be realized using the existing semiconductor process technology and to provide a method of producing the same.
The above object is accomplished by forming, on a predetermined semiconductor substrate, a modulation doped layer (doping superlattice) which consists of at least a highly doped semiconductor layer and an undoped (lowly doped) semiconductor layer, providing a superlattice layer on the side walls of the modulation doped layer, and causing the impurities in the highly doped semiconductor layer to diffuse toward the outside under high-temperatute conditions so that part of the superlattice provided on the side walls is disordered.
FIG. 1 is a section view illustrating the structure of a laser device according to a first embodiment of the present invention;
FIGS. 2A to 2D are section views illustrating the steps for producing the laser device of FIG. 1;
FIG. 3A is a perspective view illustrating a method of producing a light-emitting diode according to a second embodiment of the present invention;
FIG. 3B is a perspective view illustrating the structure of the light-emitting diode according to the second embodiment of the present invention;
FIG. 4A is a perspective view illustrating the method of producing a transistor according to a third embodiment of the present invention; and
FIG. 4B is a perspective view illustrating the structure of the transistor according to the third embodiment of the present invention.
A semiconductor device having a quantum wire of the present invention is fabricated as described below.
(a) A first superlattice layer (modulation doped layer) is formed by alternatingly laminating a first semiconductor layer which is a highly doped semiconductor layer and a second semiconductor layer which is a lowly doped or undoped semiconductor layer on a semiconductor substrate.
(b) The layers are partly and vertically removed by etching from the surface of the first superlattice layer through up into the substrate.
(c) The side surfaces exposed by etching are covered with a second superlattice layer.
(d) Impurities in the first semiconductor layer of the first superlattice layer are caused to diffuse toward the external side under high-temperature conditions in order to disorder the vicinity of the first semiconductor layer of the second superlattice layer.
FIG. 1 is a section view illustrating a semiconductor device according to a first embodiment of the present invention, and FIGS. 2A to 2D are section views illustrating the process of production. This embodiment deals with a semiconductor laser device.
First, as shown in FIG. 2A, a first superlattice layer (modulation doped layer) 12 and an undoped GaAs layer 13 (1 μm) are successively grown by the MBE method on a semi-insulating GaAs substrate 11. As shown in detail in a partly enlarged diagram, the first superlattice layer (modulation doped layer) 12 is formed by alternatingly laminating an undoped Ga0.7 Al0.3 As layer (120 angstroms) 20 which is a second semiconductor layer and a Ga0.7 Al0.3 As layer (60 angstroms) 21 which is a first semiconductor layer doped with zinc to have a high impurity concentration.
Next, as shown in FIG. 2B, the layers are partly removed by dry etching from the surface of the undoped GaAs layer 13, through the first superlattice layer 12 up into the substrate 11 to form a step having a vertical side wall.
Thereafter as shown in FIG. 2C, monoatomic layers GaAs/Ga0.7 Al0.3 As are laminated by the MBE method each in an amount of five periods to form a second superlattice layer (30 angstroms) 14 and an n-Ga0.7 Al0.3 As layer 15 to cover the stepped portion having the side walls from the surface of the undoped GaAs layer 13.
Then, as shown in FIG. 2D, the element substrate is placed under a high-temperature condition (preferably at 550° to 680° C.) so that the impurities Zn are diffused from the first semiconductor layer 21 to the outside by 40 angstroms, in order to disorder part of the second superlattice layer in the vicinity of the first semiconductor layer 21 thereby to form a quantum wire 24 that is sandwiched between one disordered region 23 and another adjacent disordered region 23. FIG. 2D illustrates on an enlarged scale a region that is surrounded by a broken line in FIG. 2C.
Next, a groove 17 in FIG. 1 is formed by etching from the second superlattice on the surface of the element to reach the undoped GaAs layer 13, so that there will flow no current that does not contribute to laser oscillation. Then, zinc is diffused from part of the surface of the n-Ga0.7 Al0.3 As layer 15 down to the substrate 11, in order to form a zinc-diffused region 16.
Finally, Ti-Mo-Au is evaporated onto the surface of the zinc-diffused region 16 to form a p-type electrode 18, and AuGeNi-Cr-Au is evaporated on the surface of the second superlattice layer that covers the side surfaces of the step to form an n-type electrode 19, thereby to obtain a semiconductor laser device as shown in FIG. 1.
According to the above embodiment, the threshold current is 0.1 to 0.5 mA, the characteristic temperature is 400° K., and the relaxation oscillation frequency reaches 40 GHz, which are greatly improved characteristics compared with those of the conventional double heterostructure laser and the quantum well laser.
According to the present invention, furthermore, side walls of the first superlattice layer may be exposed by cleavage instead of etching.
This embodiment deals with a light-emitting diode to which the present invention is adapted.
The procedure is carried out in the same manner as in Embodiment 1 through up to the step of forming the p-type electrode 18. Then, an n-type electrode 20 is formed on only the Ga0.7 Al0.3 As layer 15 on the stepped portion (FIG. 3A). Then, SiO2 is deposited maintaining a thickness of λ/4 on the opposing two surfaces A and B to form an AR (antireflection) coating film 21.
A light-emitting diode shown in FIG. 3B is fabricated through the above-mentioned steps. In FIG. 3B, arrow indicates the direction in which the light will be emitted. According to this embodiment, there is obtained a light-emitting diode having good efficiency and good temperature characteristics.
This embodiment deals with a high-mobility transistor to which the present invention is adapted. The procedure is carried out in the same manner as in Embodiment 1 up to the step of forming a second superlattice layer 14. Then, an undoped Ga0.7 Al0.3 As layer (0.1 μm) 31 and an undoped GaAs layer (0.1 μm) 32 are formed. The device is then placed under a high-temperature condition to form quantum wires 24 in the same manner as in the Embodiment 1. Then, a Ti/Pt/Au gate electrode (gate length, 0.5 μm) 33 is formed. Using the gate electrode as a mask, silicon ions are injected to form an n+-type region 34 (FIG. 4A). Thereafter, AuGe/Au source electrode 35 and drain electrode 36 are formed on the GaAs layer 32.
The quantum wire FET shown in FIG. 4B is thus fabricated through the above-mentioned method, featuring a mutual conductance gm of about 400 mS per 1 μm of gate width at room temperature, which is 2 to 4 times as great as that of the conventional GaAs MESFET (gm is about 100 mS) or HEMT (gm is about 200 mS).
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|U.S. Classification||257/15, 257/E29.075, 257/E29.245, 257/194, 257/E33.008, 257/E29.091, 257/13, 257/28, 257/20, 257/E21.408, 372/45.012|
|International Classification||B82Y20/00, B82Y10/00, H01S5/00, H01L29/775, H01L29/15, H01L27/15, H01L29/80, H01L21/335, H01L29/205, H01L29/06, H01S5/34|
|Cooperative Classification||B82Y10/00, H01L33/06, H01L29/205, H01L29/66469, H01S5/341, H01L29/151, H01L29/775, H01L33/24, B82Y20/00|
|European Classification||B82Y20/00, B82Y10/00, H01L29/66M6T6E4, H01S5/34F, H01L29/15B, H01L29/205, H01L29/775, H01L33/24, H01L33/06|
|Dec 8, 1988||AS||Assignment|
Owner name: HITACHI, LTD., 6, KANDA SURUGADAI 4-CHOME, CHIYODA
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNORS:OHTOSHI, TSUKURU;UOMI, KAZUHISA;FUKUZAWA, TADASHI;AND OTHERS;REEL/FRAME:004983/0689
Effective date: 19871224
|Sep 28, 1992||FPAY||Fee payment|
Year of fee payment: 4
|Sep 30, 1996||FPAY||Fee payment|
Year of fee payment: 8
|Dec 19, 2000||REMI||Maintenance fee reminder mailed|
|May 27, 2001||LAPS||Lapse for failure to pay maintenance fees|
|Jul 31, 2001||FP||Expired due to failure to pay maintenance fee|
Effective date: 20010530