Search Images Maps Play YouTube News Gmail Drive More »
Sign in
Screen reader users: click this link for accessible mode. Accessible mode has the same essential features but works better with your reader.

Patents

  1. Advanced Patent Search
Publication numberUS5108951 A
Publication typeGrant
Application numberUS 07/609,883
Publication dateApr 28, 1992
Filing dateNov 5, 1990
Priority dateNov 5, 1990
Fee statusPaid
Also published asDE69133549D1, EP0485130A2, EP0485130A3, EP0485130B1, EP0856883A2, EP0856883A3, US5930673
Publication number07609883, 609883, US 5108951 A, US 5108951A, US-A-5108951, US5108951 A, US5108951A
InventorsFusen E. Chen, Fu-Tai Liou, Yih-Shung Lin, Girish A. Dixit, Che-Chia Wei
Original AssigneeSgs-Thomson Microelectronics, Inc.
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
Depositing aluminum while integrated circuit is being heated
US 5108951 A
Abstract
A method is provided for depositing aluminum thin film layers to form improved quality contacts in a semiconductor integrated circuit device. All or some of the deposition process occurs at relatively low deposition rates at a temperature which allows improved surface migration of the deposited aluminum atoms. Aluminum deposited under these conditions tends to fill contact vias without the formation of voids. The low temperature deposition step can be initiated by depositing aluminum while a wafer containing the integrated circuit device is being heated from cooler temperatures within the deposition chamber.
Images(1)
Previous page
Next page
Claims(19)
What is claimed is:
1. A method for depositing an aluminum layer on a semiconductor integrated circuit, comprising the steps of:
increasing the temperature of the integrated circuit to a temperature less than approximately 500° C.; and
beginning to deposit aluminum on the integrated circuit simultaneously with the increase in the temperature at a rate which is low enough to allow surface migration of deposited aluminum to fill low regions in the integrated circuit.
2. The method of claim 1, wherein the temperature increases to a value between approximately 380° C. and approximately 500° C.
3. The method of claim 2, wherein the temperature increases to a value between approximately 420° C. and 460° C.
4. The method of claim 3, wherein the temperature increases to a value of approximately 450° C.
5. The method of claim 1, wherein the rate of deposition of aluminum is less than approximately 100 angstroms/sec.
6. The method of claim 1, wherein the rate of deposition for aluminum is changed at least once during the depositing aluminum step.
7. The method of claim 6, wherein the rate of deposition of aluminum is less during a middle deposition period than during a beginning deposition period and during an ending deposition period.
8. The method of claim 7, wherein the deposition rate is less than approximately 40 angstroms/sec during the middle deposition period, and greater than approximately 50 angstroms/sec during the beginning and ending deposition periods.
9. The method of claim 8, wherein the aluminum deposition rate during the ending deposition period is greater than approximately 100 angstroms/sec.
10. The method of claim 1, wherein aluminum is deposited at a rate which lies within the selected region 32 of FIG. 3.
11. A method for forming an aluminum contact in an integrated circuit, comprising the steps of:
forming an insulating layer over a conducting layer;
forming an opening through the insulating layer to expose a portion of the conducting layer;
raising the temperature of the integrated circuit from below approximately 350° C. to a value between approximately 400° C. and approximately 500° C.;
during said temperature raising step, depositing aluminum continuously on the integrated circuit, wherein the depositing aluminum step begins simultaneously with the beginning of the temperature raising step;
after said temperature raising step, continuing to deposit an aluminum layer on the integrated circuit to a desired thickness;
during said desired thickness depositing step, controlling the rate at which aluminum is deposited to allow deposited aluminum to migrate into the opening so as to provide a substantially complete fill thereof.
12. The method of claim 11, wherein said controlling step comprises the step of:
maintaining the deposition rate to be less than approximately
(0.7*T)-250 angstroms/sec
where T lies between approximately 400° C. and approximately 500° C.
13. The method of claim 11, wherein the deposition rate is varied, with one portion being faster than approximately 50 angstroms/sec, and another portion being slower than approximately 50 angstroms/sec.
14. The method of claim 13, wherein a last portion of said deposition step is performed at a deposition rate faster than approximately 100 angstroms/sec.
15. The method of claim 13, wherein one deposition portion is performed at a rate above approximately 60 angstroms/sec, and another deposition portion is performed at a rate below approximately 40 angstroms/sec.
16. A method for forming an aluminum contact in an integrated circuit, comprising the steps of:
forming an insulating layer over a conducting layer;
forming an opening through the insulating layer to expose a portion of the conducting layer;
forming a barrier layer over the insulating layer, in the opening and the exposed portion of the conducting layer;
beginning to deposit aluminum at a temperature below approximately 350° C. on the barrier layer at a relatively low rate of deposition;
simultaneously with said beginning to deposit aluminum step, beginning to raise the temperature of the integrated circuit;
continuing to deposit aluminum while increasing the temperature from below approximately 350° C. to a desired temperature between approximately 400° C. and approximately 500° C.;
after the integrated circuit temperature has reached the desired temperature, depositing an aluminum layer on the integrated circuit to a desired thickness;
during said desired thickness depositing step, controlling the rate at which aluminum is deposited to allow deposited aluminum to migrate into the opening so as to provide a substantially complete fill thereof.
17. The method of claim 16, wherein the barrier layer comprises a refractory metal/refractory metal nitride composite.
18. The method of claim 16, wherein the barrier layer comprises a refractory metal/refractory metal nitride/refractory metal composite.
19. The method of claim 11, wherein the depositing aluminum step is performed at a first deposition rate which is changed to a second rate before the integrated circuit reaches the desired temperature.
Description
BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to semiconductor integrated circuits, and more specifically to a method for depositing metal layers in integrated circuits so as to form an improved interlevel contact.

2. Description of the Prior Art

In semiconductor integrated circuits, formation of metal interconnect layers is important to the proper operation of these devices. Metal interconnect signal lines make contact to lower conductive layers of the integrated circuit through vias in an insulating layer. For best operation of the device, the metal used to form the interconnect layer should completely fill the via.

Because of its physical properties, aluminum is especially suited for fabrication of metal interconnect lines in integrated circuits. However, the sputtering process used to apply aluminum thin film layers to an integrated circuit generally results in less than ideal filling of contact vias. Large aluminum grains tend to form on the upper surface of the insulating layer. Those grains which form at the edges of the contact via tend to block it before aluminum has a chance to completely fill the via. This results in voids and uneven structures within the via.

This problem is especially acute as integrated circuit devices are fabricated using smaller geometries. The smaller contacts used in these devices tend to have a larger aspect ratio (height to width ratio) than larger geometry devices, which exacerbates the aluminum filling problem.

The uneven thickness of the aluminum layer going into the via, caused by the step coverage problem just described, has an adverse impact on device functionality. If the voids in the via are large enough, contact resistance can be significantly higher than desired. In addition, the thinner regions of the aluminum layer will be subject to the well known electromigration problem. This can cause eventual open circuits at the contacts and failure of the device.

Many approaches have been used to try to ensure good metal contact to lower interconnect levels. For example, refractory metal layers have been used in conjunction with the aluminum interconnect layer to improve conduction through a via. Sloped via sidewalls have been used to improve metal filling in the via. The use of sloped sidewalls is becoming less common as device sizes shrink because they consume too much area on a chip.

Even with these techniques, the problems of completely filling a via with aluminum are not solved. In part this is due to the fact that aluminum is deposited at a temperature which tends to encourage fairly large grain sizes. Voids and other irregularities within the contact continue to be problems with current technologies.

One technique which has been proposed to overcome the via filling problem is to deposit the aluminum interconnect layers at a temperature between 500° C. and 550° C. At these temperatures, the liquidity of the aluminium is increased, allowing it to flow down into the vias and fill them. This technique is described, for example, in DEVELOPMENT OF A PLANARIZED Al-Si CONTACT FILLING TECHNOLOGY H. Ono et al June 1990 VMIC Conference proceedings, pages 76-82. This reference teaches that temperatures below 500° C. and above 550° C. result in degraded metal filling of contact vias. It is believed that use of such technique still suffers from problems caused by large grain sizes.

It would be desirable to provide a technique for depositing aluminum thin film layers on an integrated circuit so as to improve coverage in contact vias. It is further desirable that such a technique be compatible with current standard process flows.

SUMMARY OF THE INVENTION

It is therefore an object of the present invention to provide a method for forming an aluminum contact on an integrated circuit.

It is another object of the present invention to provide such a method in which aluminum fills the contact via while minimizing the number of voids formed therein.

It is a further object of the present invention to provide such a method which is compatible with current process technology.

Therefore, according to the present invention, a method is provided for depositing aluminum thin film layers to form improved quality contacts in a semiconductor integrated circuit device. All or some of the deposition process occurs at relatively low deposition rates at a temperature which allows improved surface migration of the deposited aluminum atoms. Aluminum deposited under these conditions tends to fill contact vias without the formation of voids. The low temperature deposition step can be initiated by depositing aluminum while a wafer containing the integrated circuit device is being heated from cooler temperatures within the deposition chamber.

BRIEF DESCRIPTION OF THE DRAWINGS

The novel features believed characteristic of the invention are set forth in the appended claims. The invention itself however, as well as a preferred mode of use, and further objects and advantages thereof, will best be understood by reference to the following detailed description of an illustrative embodiment when read in conjunction with the accompanying drawings, wherein:

FIGS. 1 and 2 illustrate the formation of a metallic contact according to the present invention;

FIG. 3 is a graph illustrating preferred process conditions for formation of an aluminum contact; and

FIGS. 4a-4d illustrate several alternative deposition rate diagrams for forming contacts according to the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENT

The process steps and structures described below do not form a complete process flow for manufacturing integrated circuits. The present invention can be practiced in conjunction with integrated circuit fabrication techniques currently used in the art, and only so much of the commonly practiced process steps are included as are necessary for an understanding of the present invention. The figures representing cross-sections of portions of an integrated circuit during fabrication are not drawn to scale, but instead are drawn so as to illustrate the important features of the invention.

Referring to FIG. 1, an integrated circuit device is formed in and on a substrate 10. An insulating layer 12, such as a reflow glass or other oxide layer as known in the art, is formed over the substrate 10. Layer 12 typically has a thickness on the order of approximately 6000-12,000 angstroms. A contact via 14 is formed through the oxide layer 12 using a mask and an isotropic etching technique as known in the art. Via 14 is shown as making contact with substrate 10 in FIG. 1, but may be formed over a lower interconnect layer as known in the art.

A barrier metal layer 16, such as a refractory metal, refractory metal nitride, refractory metal silicide, or combination thereof, is deposited over the surface of the device as known in the art. Layer 16 is relatively thin, typically approximately 500-2000 angstroms thick, and is deposited conformally to cover the bottom and sidewalls of contact opening 14.

Referring to FIG. 2, an aluminum layer 18 is deposited over the surface of the device. When the aluminum layer 18 is deposited using the process conditions described below, the layer 18 actually completely fills in the via 14 as shown in FIG. 2. This occurs because the preferred process conditions enhance the surface migration of the deposited aluminum atoms, so that aluminum formation in the bottom of the via 14 occurs preferentially to formation on the oxide layer 12 near the edges of the via 14. This ensures a high quality, reproducible contact within the via 14, greatly minimizing the problems caused by incomplete filling of the via 14.

FIGS. 3 and 4 illustrate preferred conditions for deposition of the aluminum layer 18 in order to provide an improved contact. Graph 30 illustrates the deposition rate, in angstroms per second, as a function of the deposition temperature in degrees Celsius. The preferred region 32 lies between 400° C.-500° C., with the maximum deposition rate lying below a line extending from a rate of about 30 angstroms per second at 400° C. to 100 angstroms per second at 500° C.

When aluminum is deposited within this preferred region 32, its surface migration characteristics are enhanced over metal deposited under other conditions. For example, depositing aluminum at temperatures higher than 500° C. tends to form large grains, so that blocking of the contact opening occurs as described earlier. If the deposition rate is too high, the deposited aluminum is not able to migrate quickly enough into the via to completely fill it. Therefore, the region 32 depicted in FIG. 3 outlines, approximately, a preferred pairing of processing conditions under which deposited aluminum migrates into the contact via and fills it while minimizing the formation of voids and uneven regions.

Process conditions can be varied slightly from that shown in FIG. 3 without departing from the teachings of the present invention. For example, temperatures a little below 400° C. can be used, as long as the deposition rates are not too high. As the temperature decreases, the mobility of the deposited aluminum atoms goes down, so that incomplete filling of the via occurs if the deposition rates are too high.

FIG. 4 includes four graphs illustrating preferred processes by which an aluminum interconnect layer can be formed. All of these processes utilize, to a greater or lesser degree, processing which occurs within the preferred region 32. Each of the curves 40, 42, 44, 46 illustrates a variation in the aluminum deposition rate with time. Each curve 40-46 illustrates an alternative process utilizing the concepts of the present invention.

Each of the four processes shown in FIG. 4 preferably uses approximately the same set of initial conditions. In the prior art, it is common to deposit a very thin layer of small grain aluminum at a relatively cold temperature, typically below 350° C., and then stop the deposition process. The wafer on which the integrated circuit device is located is then preheated to the required deposition temperature, over 500° C., by bathing the wafer with a stream of preheated argon gas. Once the wafer has reached the deposition temperature, deposition of the aluminum is resumed at such elevated temperature.

In the present technique, aluminum is preferably deposited on the device continuously while the device is being heated. Thus, a small amount of aluminum is deposited on the device while the wafer is at or below 350° C. As the wafer gradually heats to the desired deposition temperature, aluminum deposition continues. This gives a layer of aluminum which is deposited with very small grain sizes, tending to minimize grain size growth at later stages. The deposition temperature is between 400° C. and 500° C., and is typically reached in about 40 seconds.

FIG. 4 shows deposition rate curves for four alternative deposition techniques. For all of the curves in FIG. 4, the initial temperature of the wafer is assumed to be approximately 350° C., with the final deposition temperature being 450° C. Heating the wafer to 450° C. takes approximately 40 seconds. It will be appreciated by those skilled in the art that different deposition temperatures may be used. Once the wafer has heated to the deposition temperature, the temperature remains constant.

Curve 40 in FIG. 4(a) depicts a deposition process in which the deposition rate stays constant during the entire course of depositing the aluminum layer 18. Deposition begins when heat is first applied to the wafer in the chamber, and continues while the wafer heats to 450° C. and remains there. At a rate of 40 angstroms per second, an 8000 angstrom thick aluminum layer will take approximately 200 seconds to deposit.

FIG. 4(b) shows an alternative deposition process in which the deposition rate is performed at 40 angstroms per second for the first 20 seconds, and 60 angstroms per second thereafter. The temperature is increasing toward the 450° C. point during the entire deposition step at 40 angstroms per second, and for the first 20 seconds at 60 angstroms per second. For an 8000 angstrom layer, the process curve 42 will result in an aluminum layer formation process which takes approximately 140 seconds.

Curve 44 shows a process in which the initial deposition rate is 40 angstroms per second, followed by an increase to 80 angstroms per second after 20 seconds. After approximately one-third of the entire thickness of the aluminum layer has been deposited, the deposition rate is changed to 30 angstroms per second. This rate is maintained for the deposition of approximately another one-third of the entire layer thickness, followed by an increase of the deposition rate back to 80 angstroms per second.

The process depicted by curve 44 will take approximately 160 seconds to deposit an 8000 angstrom layer of aluminum. This assumes that 2400 angstroms are deposited during each of the 80 angstrom per second segments, and during the 30 angstrom per second segment. The process of FIG. 4(c) provides for an initial fast deposition of aluminium, followed by a slow deposition period in which deposited aluminium is given the opportunity to migrate into the contact opening. The 30 angstrom deposition period will last for approximately 80 seconds, in order to deposit 2400 angstroms.

Curve 46 in FIG. 4(d) starts in the same manner as curve 44, but ends with a higher deposition rate. Processing time is saved by the faster deposition near the end of the process. By this point in the deposition process, the contact opening has been mostly filled, and the possibility of voiding in the via has been greatly decreased. Thus, there is no harm to depositing aluminum at a rate which falls outside of the preferred region 32.

It will be appreciated by those skilled in the art that the processes shown in FIG. 4 are illustrative and not definitive. Other variations are possible. The precise combination of deposition temperatures and deposition rates can be varied to suit the requirements and restrictions of the particular processes at hand. For example, if large contact openings only are used, faster deposition rates can be made as the voiding problem is not so critical. For processes such as those illustrated by curves 44 and 46, it is not necessary to adhere to a one-third thickness deposition at each rate. These rates and times may be varied to suit the requirements of a production process while still taking advantage of the concepts of the invention.

It is also possible to use the technique of depositing aluminum within the preferred area 32 without continuously depositing aluminum while the wafer temperature is ramping up to the deposition temperature. As is done on the prior art, a thin layer of aluminum can be deposited at relatively cold temperatures, preferably below 350° C. Deposition is then stopped while the wafer is brought to a temperature between 400° C. and 500° C. Deposition is then resumed at a rate within the preferred region 32, and completed using the teachings set forth above. For example, any of the curves in FIG. 4 can be used, with a difference that the initial 40 angstroms per second deposition rate is omitted.

Use of the continuous layer formation while the wafer is being heated, combined with deposition at rates and temperatures within the preferred region 32, results in small deposited aluminum grain size and very good filling of the via. This is caused both by the good electromigration characteristics of the deposited aluminum layer at the temperatures and deposition rates involved, and by the fact that very small initial grain sizes result in smaller final grain sizes, having less tendency to block off the via before it is completely filled.

While the invention has been particularly shown and described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.

Patent Citations
Cited PatentFiling datePublication dateApplicantTitle
US4566177 *May 11, 1984Jan 28, 1986Signetics CorporationFormation of electromigration resistant aluminum alloy conductors
US4837183 *May 2, 1988Jun 6, 1989Motorola Inc.Controlling temperature
US4970176 *Sep 29, 1989Nov 13, 1990Motorola, Inc.Low and higher temperature, melt flow
US4988423 *Nov 3, 1989Jan 29, 1991Matsushita Electric Industrial Co., Ltd.Passivation coating, metal conductors, aluminum alloys, silicon nitride
Non-Patent Citations
Reference
1 *C. Y. Ting:TiN Formed by Evaporation as a Diffusion Barrier Between Al and Si; J. Vac. Science Technology, vol. 21, No. 1, May/Jun. 1982.
2 *Wolf et al.: Aluminum Thin Films and Physical Vapor Deposition in VLSI; Silicon Processing for the VLSI Era, Lattice Press, 1986, pp. 332 334 and 367 374.
3Wolf et al.: Aluminum Thin Films and Physical Vapor Deposition in VLSI; Silicon Processing for the VLSI Era, Lattice Press, 1986, pp. 332-334 and 367-374.
Referenced by
Citing PatentFiling datePublication dateApplicantTitle
US5270255 *Jan 8, 1993Dec 14, 1993Chartered Semiconductor Manufacturing Pte, Ltd.Metallization process for good metal step coverage while maintaining useful alignment mark
US5288665 *Aug 12, 1992Feb 22, 1994Applied Materials, Inc.Process for forming low resistance aluminum plug in via electrically connected to overlying patterned metal layer for integrated circuit structures
US5356836 *Aug 19, 1993Oct 18, 1994Industrial Technology Research InstituteAluminum plug process
US5374592 *Feb 7, 1994Dec 20, 1994Sgs-Thomson Microelectronics, Inc.Method for forming an aluminum metal contact
US5407863 *Nov 29, 1991Apr 18, 1995Kabushiki Kaisha ToshibaMethod of manufacturing semiconductor device
US5409862 *Mar 22, 1993Apr 25, 1995Kabushiki Kaisha ToshibaMethod for making aluminum single crystal interconnections on insulators
US5472912 *Nov 7, 1994Dec 5, 1995Sgs-Thomson Microelectronics, Inc.Method of making an integrated circuit structure by using a non-conductive plug
US5512512 *Nov 30, 1993Apr 30, 1996Nec CorporationContact hole filling in a semiconductor device by irradiation with plasma of inert gas ions
US5523259 *Dec 5, 1994Jun 4, 1996At&T Corp.Method of forming metal layers formed as a composite of sub-layers using Ti texture control layer
US5582971 *May 3, 1995Dec 10, 1996Sgs-Thomson Microelectronics, Inc.Method of forming submicron contacts
US5658828 *Nov 30, 1993Aug 19, 1997Sgs-Thomson Microelectronics, Inc.Method for forming an aluminum contact through an insulating layer
US5712194 *Jun 6, 1996Jan 27, 1998Matsushita Electronics CorporationSemiconductor device including interlayer dielectric film layers and conductive film layers
US5804251 *Apr 25, 1997Sep 8, 1998Intel CorporationDepositing wetting layer on sides and bottom of opening in substrate, multistep filling with aluminum or alloy
US5807760 *Sep 3, 1996Sep 15, 1998Lucent Technologies Inc.Method of despositing an aluminum-rich layer
US5843842 *Sep 3, 1996Dec 1, 1998Samsung Electronics Co., Ltd.Method for manufacturing a semiconductor device having a wiring layer without producing silicon precipitates
US5843843 *Nov 5, 1996Dec 1, 1998Samsung Electronics Co., Ltd.Method for forming a wiring layer a semiconductor device
US5882399 *Aug 23, 1997Mar 16, 1999Applied Materials, Inc.Method of forming a barrier layer which enables a consistently highly oriented crystalline structure in a metallic interconnect
US5911113 *Mar 18, 1997Jun 8, 1999Applied Materials, Inc.Silicon atoms inhibit reaction of metals, minimizing formation of tial3; filling high aspect ratio holes without leaving unfilled voids
US5913146 *Mar 18, 1997Jun 15, 1999Lucent Technologies Inc.Semiconductor device having aluminum contacts or vias and method of manufacture therefor
US5925225 *Mar 27, 1997Jul 20, 1999Applied Materials, Inc.Method of producing smooth titanium nitride films having low resistivity
US5930673 *Apr 6, 1995Jul 27, 1999Stmicroelectronics, Inc.Method for forming a metal contact
US5972786 *Jun 7, 1995Oct 26, 1999Sony CorporationCoating contact hole with titanium in dielectric layer to resist electron migration of aluminum atoms, coating with titanium nitride layer; heating; depositing aluminum alloy in contact hole; etching aluminum alloy; forming circuit
US5976969 *Jun 27, 1997Nov 2, 1999Stmicroelectronics, Inc.Method for forming an aluminum contact
US5981382 *Mar 13, 1998Nov 9, 1999Texas Instruments IncorporatedProviding a dielectric layer having a opening with sidewall and a bottom, forming liner and nucleation layers, low power physical vapor deposition of aluminum, high power, physical vapor deposition of aluminum, annealing
US5985763 *Nov 14, 1997Nov 16, 1999Texas Instruments IncorporatedConstruction of metal-to-metal connections between non-adjacent layers in structure, such as semiconductor device
US6017144 *Oct 24, 1996Jan 25, 2000Applied Materials, Inc.Method and apparatus for depositing highly oriented and reflective crystalline layers using a low temperature seeding layer
US6051490 *Nov 21, 1997Apr 18, 2000Sony CorporationForming an electroconductive layer free of si nodules by sputtering a layer of aluminum alloy containing silicon on the underlying metal at high temperature to form an intermediate alloy layer
US6069051 *Jun 17, 1996May 30, 2000International Business Machines CorporationMethod of producing planar metal-to-metal capacitor for use in integrated circuits
US6136159 *Nov 6, 1998Oct 24, 2000Lucent Technologies Inc.Method for depositing metal
US6136709 *Oct 6, 1999Oct 24, 2000Infineon Technologies North America Corp.Metal line deposition process
US6140228 *Nov 13, 1997Oct 31, 2000Cypress Semiconductor CorporationLow temperature metallization process
US6149777 *Jan 21, 1999Nov 21, 2000Applied Materials, Inc.Method of producing smooth titanium nitride films having low resistivity
US6157082 *Oct 5, 1998Dec 5, 2000Lucent Technologies Inc.Semiconductor device having aluminum contacts or vias and method of manufacture therefor
US6169030 *Jan 14, 1998Jan 2, 2001Applied Materials, Inc.Metallization process and method
US6174563 *Jul 6, 1998Jan 16, 2001Nec CorporationForming an integrated circuit which includes a metal film layer for wiring
US6232665Jun 8, 1999May 15, 2001Applied Materials, Inc.Silicon-doped titanium wetting layer for aluminum plug
US6242811May 15, 1998Jun 5, 2001Stmicroelectronics, Inc.Interlevel contact including aluminum-refractory metal alloy formed during aluminum deposition at an elevated temperature
US6268290 *May 27, 1994Jul 31, 2001Sony CorporationMethod of forming wirings
US6271137Nov 1, 1993Aug 7, 2001Stmicroelectronics, Inc.Method of producing an aluminum stacked contact/via for multilayer
US6274492May 30, 1997Aug 14, 2001Technische Universitaet DresdenProcess and device for production of metallic coatings on semiconductor structures
US6287963Apr 6, 1995Sep 11, 2001Stmicroelectronics, Inc.Method for forming a metal contact
US6291336Jun 20, 1997Sep 18, 2001Taiwan Semiconductor Manufacturing CompanyAlCu metal deposition for robust Rc via performance
US6350676Mar 28, 1995Feb 26, 2002Sgs-Thomson Microelectronics, S.R.L.Method of forming high-stability metallic contacts in an integrated circuit with one or more metallized layers
US6365514Dec 23, 1997Apr 2, 2002Intel CorporationTwo chamber metal reflow process
US6373088Jun 10, 1998Apr 16, 2002Texas Instruments IncorporatedEdge stress reduction by noncoincident layers
US6380008Dec 14, 2000Apr 30, 2002Texas Instruments IncorporatedEdge stress reduction by noncoincident layers
US6420260Oct 24, 2000Jul 16, 2002Applied Materials, Inc.Ti/Tinx underlayer which enables a highly <111> oriented aluminum interconnect
US6420263Feb 28, 2000Jul 16, 2002International Business Machines CorporationMethod for controlling extrusions in aluminum metal lines and the device formed therefrom
US6433435May 29, 1998Aug 13, 2002Stmicroelectronics, Inc.Aluminum contact structure for integrated circuits
US6455427Dec 30, 1999Sep 24, 2002Cypress Semiconductor Corp.Method for forming void-free metallization in an integrated circuit
US6617242 *Jun 7, 1995Sep 9, 2003Stmicroelectronics, Inc.Method for fabricating interlevel contacts of aluminum/refractory metal alloys
US6627547May 29, 2001Sep 30, 2003Cypress Semiconductor CorporationHot metallization process
US6756302Oct 17, 2000Jun 29, 2004Cypress Semiconductor CorporationLow temperature metallization process
US6946393 *Feb 13, 2001Sep 20, 2005Micron Technology, Inc.Small grain size, conformal aluminum interconnects and method for their formation
US6969448Dec 30, 1999Nov 29, 2005Cypress Semiconductor Corp.Method for forming a metallization structure in an integrated circuit
US7189645Aug 24, 2004Mar 13, 2007National Semiconductor CorporationAdjusting value of first deposition time period and value of second deposition time period to optimize said percentage of via fills in semiconductor wafer
US7217661Sep 20, 2005May 15, 2007Micron Technology, Inc.Small grain size, conformal aluminum interconnects and method for their formation
US7276795Jul 27, 2004Oct 2, 2007Micron Technology, Inc.Small grain size, conformal aluminum interconnects and method for their formation
US7358611Dec 19, 2006Apr 15, 2008National Semiconductor CorporationSystem and method for adjusting the ratio of deposition times to optimize via density and via fill in aluminum multilayer metallization
US7560816Aug 31, 2007Jul 14, 2009Micron Technology, Inc.Small grain size, conformal aluminum interconnects and method for their formation
US7675174May 13, 2003Mar 9, 2010Stmicroelectronics, Inc.Method and structure of a thick metal layer using multiple deposition chambers
US7737024Apr 27, 2006Jun 15, 2010Micron Technology, Inc.Small grain size, conformal aluminum interconnects and method for their formation
US8222138Feb 1, 2010Jul 17, 2012St Microelectronics, Inc.Method and structure of a thick metal layer using multiple deposition chambers
DE19621855C2 *May 31, 1996Mar 27, 2003Univ Dresden TechVerfahren zur Herstellung von Metallisierungen auf Halbleiterkörpern unter Verwendung eines gepulsten Vakuumbogenverdampfers
DE19816927A1 *Apr 16, 1998Sep 23, 1999Siemens AgMetal deposition onto a substrate surface with a recess especially a sub-micron size via in semiconductor device production
EP0731503A2Dec 12, 1995Sep 11, 1996Texas Instruments IncorporatedSemiconductor cavity filling process
EP0793268A2 *May 22, 1996Sep 3, 1997Texas Instruments IncorporatedProcess for filling a cavity in a semiconductor device
EP0838536A2 *Oct 22, 1997Apr 29, 1998Applied Materials, Inc.Method and apparatus for depositing highly oriented and reflective crystalline layers
EP1477580A2 *May 12, 2004Nov 17, 2004SGS-THOMSON MICROELECTRONICS, INC. (a Delaware corp.)Deposition method using multiple deposition chambers
Classifications
U.S. Classification438/643, 257/E21.295, 257/E21.585, 257/E21.162, 257/E23.16, 257/E23.019, 438/688
International ClassificationC23C16/20, H01L23/532, H01L21/285, H01L21/768, C23C16/02, H01L21/3205, H01L23/485, H01L21/28
Cooperative ClassificationH01L23/53223, H01L21/76843, H01L23/485, C23C16/20, H01L21/32051, H01L21/28512, H01L21/76877, C23C16/0281
European ClassificationH01L23/532M1A4, H01L21/285B4, H01L21/3205M, H01L21/768C3B, C23C16/20, H01L21/768C4, C23C16/02H2, H01L23/485
Legal Events
DateCodeEventDescription
Oct 7, 2003FPAYFee payment
Year of fee payment: 12
Nov 24, 2000ASAssignment
Owner name: STMICROELECTRONICS, INC., TEXAS
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHEN, FUSEN E.;LIOU, FU-TAI;LIN, YIH-SHUNG;AND OTHERS;REEL/FRAME:011325/0143
Effective date: 19901102
Owner name: STMICROELECTRONICS, INC. 1310 ELECTRONICS DRIVE CA
Oct 4, 1999FPAYFee payment
Year of fee payment: 8
Sep 25, 1995FPAYFee payment
Year of fee payment: 4
Nov 5, 1990ASAssignment
Owner name: SGS-THOMSON MICROELECTRONICS, INC., A CORP. OF DE
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNORS:CHEN, FUSEN E.;LIOU, FU-TAI;LIN, YIH-SHUNG;AND OTHERS;REEL/FRAME:005517/0484
Effective date: 19901102