|Publication number||US5409856 A|
|Application number||US 08/131,219|
|Publication date||Apr 25, 1995|
|Filing date||Oct 6, 1993|
|Priority date||Oct 7, 1992|
|Also published as||DE4333989A1, DE4333989B4|
|Publication number||08131219, 131219, US 5409856 A, US 5409856A, US-A-5409856, US5409856 A, US5409856A|
|Original Assignee||Goldstar Electron Co., Ltd.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (2), Non-Patent Citations (2), Referenced by (10), Classifications (14), Legal Events (6)|
|External Links: USPTO, USPTO Assignment, Espacenet|
The present invention relates to a process of making a capacitor in a semiconductor memory device, particularly fabricating a fin-shaped storage electrode node of a storage capacitor cell in a semiconductor memory device, which meet the demands for simplifying processes and enhancing memory integration for semiconductor devices.
It is conventional to fabricate a fin-shaped storage electrode node of a capacitor used in a semiconductor memory device.
This conventional technology for making a fin-shaped capacitor is shown in FIG. 1 with cross sectional views, and comprises the steps of:
in FIG. 1(A), defining isolation areas and active areas on a silicon substrate, depositing gate oxide (21) and polysilicon on them, forming a gate by patterning the gate oxide (21) and polysilicon, completing a MOS transistor by forming source/drain regions (11), and depositing a silicon nitride layer (22) layer,
in FIG. 1(B), depositing a silicon oxide layer (23), a polysilicon layer (24) and silicon oxide layer (25) in cited order, forming a contact hold (30) to make a storage electrode node contact;
in FIG. 1(C), depositing a polysilicon (26) layer, forming a photoresist pattern (not shown), patterning a storage electrode node by means of etching anisotropically polysilicon layers (24,26) and silicon oxide layers (23,25) with the photoresist pattern;
in FIG. 1(D), forming a fin-shaped storage electrode node (8) by a wet etching of silicon oxide which has remained in a storage electrode node pattern; and
in FIG. 1(E), forming a dielectric layer (27) on a storage electrode node, fabricating a capacitor in the memory cell by forming a plate electrode (10) through depositing polysilicon on a dielectric layer, depositing a silicon oxide layer (28), forming a contact hole, completing a memory cell after the formation of a bit line (18).
In this conventional process, one of the main problems is that more polysilicon-interlayer layers are needed to increase the number of fins of a storage electrode node in order to attain an ultra integrated circuit, resulting in processes and process time which are more complicated and prolonged.
Being intended to overcome the above described disadvantages of the conventional arts, the present invention has as an object of providing a simple and time-saving process of making a capacitor in a semiconductor memory cell device.
In achieving the above object, the present invention of a process of making a capacitor in a semiconductor memory cell device comprises the steps of: (1), forming required circuit elements on a semiconductor substrate, depositing an insulation layer, forming a first disposable layer (equivalent to "interlayer" in a different expression) of material 1 on the insulation layer, a second disposable layer of material 2, a third disposable layer of material 1 and a fourth disposable layer of material 2, where material 1 and 2 have different etching rates; (2), forming a contact hole by etching the disposable layers of material 1 and material 2, and the insulation layer; (3), depositing a first conductive layer and a fifth disposable layer of material 2; (4), defining a storage electrode node region pattern of a capacitor by etching all of the first, second, third and fourth disposable layers; the first conductive layer and the fifth disposable layer; (5), removing the remaining disposable layers of material 1 by wet etching; (6), depositing a second conductive layer, etching anisotropically the second conductive layer to form a storage electrode node region; and (7), forming a storage electrode node by a wet etching of all the remaining disposable layers made of material 2.
In order to complete a capacitor, the process further comprises the steps of: forming a dielectric layer on the storage electrode node; and forming a plate electrode on the dielectric layer.
The present invention is described in a different expression, using another terminology, as follows, to make it clear.
In a different expression of the present invention, a process of making a capacitor in a semiconductor memory device, comprising the steps of: (a), forming a plurality of isolation regions and active regions on a semiconductor substrate, depositing a first insulation layer on the semiconductor substrate, forming a plurality of gate lines on the first insulation layer, forming a plurality of first impurity regions and second impurity remains between said gate lines in the semiconductor substrate, forming a second insulation layer on the gate lines and the semiconductor substrate, forming a plurality of alternate first interlayers of a first material and second interlayers of a second material difference from the first material on the second insulation layer; (b), forming a plurality of contact holes on a plurality of the first impurity regions by means of eliminating a plurality of first and second interlayers and the second insulation layer; (c), forming the first conductive layer on both the surface of a last-formed second kind interlayer and the regions of a plurality of the contact holes, forming a third interlayer on the first conductive layer; (d), defining a plurality of storage electrode node patterns from regions of the first and second interlayers, the first conductive layer, and the third interlayer; (e), eliminating all remaining regions of the first interlayers; (f), forming a second conductive layer all over the semiconductor substrate; (g) removing all of the second conductive layer except for portions inside of the plurality of the storage electrode node patterns; (h), forming a plurality of storage electrode nodes by eliminating all of the remaining areas of the interlayers and a third interlayer; (i) and (j), forming a dielectric layer on a plurality of the storage electrode nodes, forming a plurality of plate electrodes on the dielectric layer.
The above object and other advantages of the present invention will be more apparent by describing in detail the preferred embodiment of the present invention with reference to the attached drawings, wherein
FIGS. 1(A) to 1(E) are cross sectional views for explaining the process of making a capacitor in a semiconductor memory device for the art and
FIGS. 2(A) to 2(I) are cross sectional views for explaining the process of making a capacitor in a semiconductor memory device according to the present invention.
FIGS. 2(A) to 2(E) illustrate a process of making a capacitor in a semiconductor memory device according to the present invention.
As shown in FIG. 2A, after forming active, field areas and required circuit elements on a semiconductor substrate (50), source/drain regions and a gate electrode (46) are formed which are surrounded by a gate insulation layer (44). An insulation layer (52) is deposited on a wafer. The first disposable layer (54) which is made of material 1 (silicon nitride) is deposited by LPCVD (low pressure chemical vapor deposition) or PECVD (plasma enhanced chemical vapor deposition) to the thickness of 500-1000 Å on the insulation layer (52). A second disposable layer (56) made of material 2(polyimide) is deposited on the first disposable layer (54) by a Spin Coat method to the thickness of 200-500 Å. A third disposable layer (58) of material l(silicon nitride) is deposited by LPCVD or PECVD to the thickness of 500-1000 Å on the second disposable layer (56). A fourth disposable layer (60) of material 2(polyimide) is deposited on the third disposable layer (58) by SOG to the thickness of 200-500 Å.
These disposable layers (54, 56, 58, 60) remain only during the process. Material 1 and material 2 vary greatly in etching rates from each other and also they have a great difference in selective etching ratio against silicon layers (amorphous silicon or polysilicon) and a silicon oxide layer.
Subsequently larger capacitance can be obtained by stacking double layers of material 1 and material 2 two or more times.
As shown in FIG. 2B, a contact hole (51) for a storage electrode node contact to the source/drain region (42) is formed by etching anisotropically the first (54), second (56), third (58), and fourth (60) disposable layers and the silicon oxide layer (52) after defining a photoresist pattern (61).
As shown in FIG. 2C, after the photoresist pattern (61), is removed polysilicon forming a first conductive layer (62) is deposited to the thickness of 200-2000 Å by LPCVD at about 560° to 620° C., using SiH4 or a mixture of Si2 H4 and PH3 as a source gas.
Next, polyamide (material 2) of a fifth disposable layer (64) is coated on the first conductive layer (62) by Spin Coat method to the thickness of 500-1000 Å at about 400° to 600° C.
Material 2 of the fifth disposable is more efficient than material 1 (silicon nitride) for subsequent etching processes of the second, fourth and fifth disposable layers although the materials could be switched.
As shown in FIG. 2D, a photoresist pattern (65) is applied to the fifth disposable layer (64) for the purpose of defining a storage electrode node pattern of the capacitor. The storage electrode node pattern (600) is defined by etching anisotropically the fifth disposable layer (64), the first conductive layer (62), the fourth (60), third (58), and second (56), first (54) disposable layers simultaneously, wherein the insulation layer (52) of silicon oxide is used as an etching-stop layer.
As shown in FIG. 2E, after the photoresist pattern (65) is removed, the first (54) and second (58) disposable layers are removed by wet etching in an H3PO4 solution.
As shown in FIG. 2F, polysilicon of the second conductive layer (66) is deposited by LPCVD to the thickness of 200-2000 Å at about 560°-620° C. on both the storage electrode node pattern (600) and the insulation layers (52).
As shown in FIG. 2G, areas of the second conductive layer (66) remain after anisotropical etching and a surface of the fifth disposable layer (64) is exposed.
As shown in FIG. 2H, the second (56), fourth (60) and fifth (64) disposable layers are removed by wet etching in an H2 SO4 solution, resulting in a completed frame of a storage electrode node.
As shown in FIG. 2I, a dielectric layer (68) is formed on the completed frame of the storage electrode node. The dielectric may be formed as a double layer consisting of silicon nitride and silicon oxide. Polysilicon is deposited on the dielectric layer (68) by LPCVD to the thickness of about 2000 Å and patterned to form a plate electrode (70) to complete the capacitor.
The present invention as described above provides various advantages: photomasking processes are reduced as all the stacked-disposable layers and the storage electrode node contacts are patterned at the same time; and an efficient area of the storage electrode node of a capacitor is maximized and the process is simplified due to the formation of indented (fin-shaped) areas by eliminating selectively the disposable layers which are stacked more than two times.
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|US6146962 *||Mar 17, 1998||Nov 14, 2000||National Semiconductor Corporation||Method for forming a DRAM cell with a stacked capacitor|
|US6391714 *||Dec 18, 2000||May 21, 2002||Samsung Electronics Co., Ltd.||Method for fabricating a capacitor in a semiconductor memory device|
|US6635933 *||Sep 17, 2001||Oct 21, 2003||Kabushiki Kaisha Toshiba||Structure of a capacitor section of a dynamic random-access memory|
|U.S. Classification||438/254, 257/E21.016, 257/E27.089, 438/397|
|International Classification||H01L21/8242, H01L21/02, H01L27/04, H01L27/10, H01L21/822, H01L27/108|
|Cooperative Classification||H01L27/10817, H01L28/87|
|European Classification||H01L28/87, H01L27/108F2M|
|Nov 24, 1993||AS||Assignment|
Owner name: GOLDSTAR ELECTRON CO., LTD., KOREA, REPUBLIC OF
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:JUN, YOUNG-KWONB;REEL/FRAME:006777/0896
Effective date: 19931029
|Oct 19, 1998||FPAY||Fee payment|
Year of fee payment: 4
|Sep 27, 2002||FPAY||Fee payment|
Year of fee payment: 8
|Nov 8, 2006||REMI||Maintenance fee reminder mailed|
|Apr 25, 2007||LAPS||Lapse for failure to pay maintenance fees|
|Jun 19, 2007||FP||Expired due to failure to pay maintenance fee|
Effective date: 20070425