|Publication number||US5479252 A|
|Application number||US 08/080,014|
|Publication date||Dec 26, 1995|
|Filing date||Jun 17, 1993|
|Priority date||Jun 17, 1993|
|Also published as||US5963314|
|Publication number||080014, 08080014, US 5479252 A, US 5479252A, US-A-5479252, US5479252 A, US5479252A|
|Inventors||Bruce W. Worster, Dale E. Crane, Hans J. Hansen, Christopher R. Fairley, Ken K. Lee|
|Original Assignee||Ultrapointe Corporation|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (72), Non-Patent Citations (49), Referenced by (296), Classifications (13), Legal Events (6)|
|External Links: USPTO, USPTO Assignment, Espacenet|
This application is related to the commonly owned, co-pending U.S. patent application entitled "Surface Extraction from a Three-Dimensional Data Set," by Ken K. Lee, application Ser. No. 08/079,193, filed on the same date as the present application and incorporated by reference herein.
1. Field of the Invention
This invention relates to lasers and, in particular, to a laser imaging system for use in analyzing defects on semiconductor wafers.
2. Related Art
Semiconductor chip manufacturers have increasingly sought to improve yields in their production processes. Key to this effort is the reduction of particulate contamination during wafer processing. As the line widths of features on the chip have shrunk from 10 microns several years ago to one micron and below today (with line widths approaching 0.3 micron or less expected in the next few years), the ability to detect and control smaller and smaller particles to achieve higher degrees of cleanliness has become paramount. Additionally, production of acceptable chips requires accurate performance of each of the process steps carried out on the wafer. The value of product on each wafer has also increased dramatically, due to the increasing complexity of semiconductor devices (many more layers and process steps) and the development of larger wafers (up to 200 mm diameter), further accentuating the need for defect detection and control.
Instrument suppliers have addressed a portion of this problem by developing defect detecting systems which scan wafers (wafer scanners) during production for anomalous optical sites that are characteristic of particulate contamination (but may represent other flaws as well). Defects can be either a pit or a bump in the surface of the wafer.
In one type of wafer scanner, in which a laser beam is focussed on and scanned over the surface of the chip (laser scanning system), anomalous optical sites are identified by comparing the light scatter from locations on known good chips to the light scatter from the corresponding locations on the chips being tested. If the two light scatters are different, than an anomalous optical site has been detected. Wafer scanners of this type are made by Tencor Instruments of Mountain View, Calif. as Model 7500, and by Inspex of Billerica, Mass. as Model TPC 8500.
In another type of wafer scanner, a video picture is taken with a conventional video camera of the surface of a known good chip and compared to a corresponding video picture taken of a chip to be tested. Typically, these video systems use white light imaging. The video pictures are analyzed by comparing them on a pixel by pixel basis, i.e., numerical data representing the video image at each pixel is compared and, if the difference falls outside of a pre-established acceptable difference, an anomalous optical site is identified. KLA of San Jose, Calif. makes a wafer scanner of this type as, for example, Model 2131.
The video systems generally cost about three times as much as the laser scanning systems, i.e., the laser scanning systems typically cost approximately $350,000 while the video systems typically cost approximately $1,000,000. However, while the laser scanning systems are more effective in detecting bumps than in detecting pits, the video systems work well in detecting either bumps or pits, and can also sense subsurface defects.
As these wafer scanners were developed, the need to identify positively the nature, e.g., type of material, type of defect (defects are classified broadly as particulate or process flow defects; there are many sub-types within each of these classifications), and the precise location and size of the defects was not appreciated. This information is important for several reasons. Identification of the nature of the defect can be used to determine the origin of the defect. The number, location and size of the defects can be used to calculate the density of defects in general, and, along with identification of the nature of the defects, the density of particular types of defects. This information can then be used to more closely monitor and/or to modify process steps in the chip production process.
As the need for more precise defect analysis has become apparent, semiconductor manufacturers' demand for the ability to "revisit" defects (or a subset of them) found by the above-described wafer scanners, for purposes of positive identification of the nature, location and size of the defects, has led to the hasty design and production of review stations based on laboratory microscopes with precision wafer handling stages that allow an operator to close in on and evaluate the previously detected defects. Revisiting of the defects by the review stations is done off-line from the defect detection process so as not to limit the throughput of the wafer scanners. Little engineering was done in the design of these review stations: in particular with respect to the optics and cleanliness (e.g., the review stations typically use off-the-shelf, visible light, research-style microscopes).
As noted above, the decreasing line widths of features on current and future semiconductor chips increase the importance of detection of contaminants and other defects having a diameter, width, or other characteristic dimension on the order of 0.1 to 0.3 microns. The visible light, off-the-shelf microscopes currently being used in defect review stations lack sufficient resolution to resolve defects of such small size, or to resolve this size structure on larger defects to aid in identification. Visible light scanning microscopes (both white light and laser-based) that are built by modifying off-the-shelf microscopes can improve the resolution significantly, but they are currently in limited use, mostly as part of complex and expensive research setups. Additionally, the use of conventional microscopes increases the risk of contamination of the semiconductor chips during the review process, since a (relatively dirty) human is in close proximity to the wafer surface and because the presence of the microscope causes turbulent flow near the wafer which tends to pull in nearby contaminants to the wafer.
Consequently, the semiconductor processing industry has attempted to use scanning electron microscopes (SEMs) that will provide increased resolution and perform energy dispersive (EDX) analysis. In EDX analysis, X-rays are directed toward the surface of the semiconductor chip. By measuring the wavelength spectrum of the reflected light, information can be gleaned regarding the types of material present on the wafer surface. Unfortunately, EDX analysis requires high voltage (up to approximately 40,000 volts) SEMs; bombardment of the wafer surface with electrons from high voltage SEMs causes damage to the wafer, rendering the wafers unusable for further processing. Recently, low voltage SEMs (100-1000 volts) have seen limited use in wafer fabs for "critical dimension" measurements of line widths, but low voltage SEMs are too slow to use except on a sample basis, and, in addition, provide no analytical (i.e., EDX) capability. Further, in both high and low voltage SEMs, the time to load samples into the SEM and pump down the load-lock chamber containing the SEM is relatively long, undesirably slowing down processing of the wafers. As a result, defect revisiting with SEMs is usually done off-line in a quality control or analysis laboratory.
In an attempt to overcome the limitations of SEMs, some major semiconductor producers have begun to use systems which include both low and high voltage SEMs. However, such systems are expensive, selling in the $1,000,000 to $1,500,000 range.
According to the invention, a laser imaging system that allows hands-off operation and operates under class 1 cleanroom conditions, has several distinct advantages over conventional systems for sub-micron particle structure evaluation. In one embodiment, the laser imaging system "revisits" defects on production semiconductor wafers, where the defects are first detected (but not analyzed or evaluated) by conventional wafer scanners such as are available from vendors as Inspex, KLA, or Tencor Instruments, among others. The laser imaging system replaces and outperforms conventional microscopes now used to analyze defects on production semiconductor wafers.
Significantly, the laser imaging system according to the invention is the first defect review tool whose optics and functionality have been designed explicitly for efficient performance of the dedicated revisit task. Unlike scanning electron microscopes (SEMs) that have previously been used for defect analysis, the laser imaging system will not damage samples or slow processing, and costs significantly less to implement than an SEM. Further, while SEMs can produce images with resolution on the nanometer scale, they have certain limitations. For example, the SEM image has an extended depth of field, like a photograph taken through a high f-stop aperture, but this image contains no quantitative depth information. Some methods of dealing with this deficiency are sample tilting or coating to produce a "shadowing" effect or perspective change, but these methods require additional process steps and cost, may damage the wafer, and do not completely resolve the problem.
Unlike the SEM, the laser imaging system according to the invention operates in air with class 1 cleanroom compatibility. Also unlike the SEM, the laser imaging system can produce a three dimensional image, using simple image rendering techniques, which provides quantitative dimensional information. The image can be stored and recalled for later viewing. The image can be rotated or tilted or shaded, with correct perspective maintained, without necessity for sample tilting or coating. Additionally, the laser imaging system has an ability the SEM cannot match: sub-surface viewing of defects lying beneath dielectric layers. Combined with three-dimensional analysis software, the user is able to examine cross sections of the defect and surrounding material, and to assess the impact on circuit layers of the wafer.
The laser imaging system presents a real time video image with resolution superior to a conventional microscope. An operator can view the image on a conventional computer display, with comfortable ergonomics, and without exposing the wafers to operator contamination or airflow.
The laser imaging system utilizes confocal laser scanning microscopy techniques, including multiline visible light lasers, and can be optionally fitted with an ultraviolet laser, improving resolution even further due to the shorter wavelengths of the ultraviolet light. The laser imaging system has resolution on the order of 0.1 to 0.2 microns. The laser imaging system can also be used for metrology.
Additional capabilities of the instrument include fluorescence of contaminants (for assistance both in locating them against the complex background of patterned wafers, and in identifying their origins), a variety of software to assist the operator in evaluating and classifying the defect, communications and data storage capabilities for providing trend analysis on-line or off-line, and capacity for image storage.
For future product line expansion, the laser imaging system is adaptable to cluster or in-situ applications, where examination of defects or structures during on-line processing can be performed.
FIG. 1 is a perspective view of a laser imaging system according to the invention.
FIG. 2 is a schematic diagram of a laser imaging system according to the invention illustrating the operation of the laser imaging system.
FIGS. 3A, 3B, and 3C combined are a schematic diagram of the electronics associated with the laser imaging system according to the invention.
FIG. 4 is a view of a display screen resulting from analysis of an area of the surface of a semiconductor chip by a laser imaging system according to the invention.
A laser imaging system according to the invention is used to analyze defects on semiconductor wafers that have been detected by patterned wafer defect detecting systems (wafer scanners). The laser imaging system replaces optical microscope review stations now utilized in the semiconductor fab environment to examine detected optical anomalies that may represent wafer defects. In addition to analyzing defects, the laser imaging system can perform a variety of microscopic inspection functions including defect detection and metrology.
FIG. 1 is a perspective view of laser imaging system 100 according to the invention. Laser imaging system 100 includes housing 102 made of stainless steel. Laser imaging system 100 occupies a footprint which fits inside a 48" standard clean hood. Laser imaging system 100 has controlled internal airflow (clean air from the cleanroom is drawn in through the top of laser imaging system 100 and exhausted from laser imaging system 100 outside of the cleanroom), maintaining class 1 conditions in the wafer area, which is isolated from the operator console.
A cassette of wafers (not shown) of a given size, e.g., wafers ranging from 3 inches (75 mm) to 8 inches (200 mm) in diameter, is positioned on cassette platform 101. One of a set of interchangeable mounting plates (not shown), there being a different mounting plate for each cassette size (i.e., wafers of different sizes are held by different cassettes), is attached to cassette platform 101. Typically, defects have previously been identified on the wafers by a defect detecting system, as described above. Wafers from the cassette are loaded through wafer door 103 formed in housing 102 into a wafer processing area housed by optics housing section 107 of housing 102. The wafers are either loaded by the operator or by a robot 104 that is part of a standard machine interface (SMIF) i.e., micro-environmentally controlled, interface. The SMIF interface, which is a "box" for transferring wafers in which clean room conditions are maintained, is conventional and is available from Asyst Technologies in Milpitas, Calif. (various models are available and can be used with the invention). After inspection, the wafers are unloaded by either the operator or the robot 104. An optional 3-cassette carousel (not shown) may be mounted on laser imaging system 100 allowing sorting of wafers after inspection.
Robot 104 is a conventional precision, high reliability (less than one wafer drop per million transfers) robotic wafer handler, such as is available from MECS in Japan as part no. UTX-1000. Robot 104 will reliably sense, load, and unload wafers from cassettes, interchangeably handling 75 mm to 200 mm wafers. Robot 104 senses missing or skewed wafers in the cassette(s), as well as the presence or absence of a wafer on the robot arm or vacuum chuck 224 (see FIG. 2). Robot 104 (and other components of laser imaging system 100) is designed to eliminate any wafer contamination (laser imaging system 100 maintains Class 1 compatible cleanliness while handling wafers). Robot 104 has sufficient utility backup (power, air, vacuum) to protect any wafer in transit on robot 104 from damage. Upon restart after a power failure, all wafer locations (cassette slots, robot arms, vacuum chuck 224 (FIG. 2), plus missing cassettes, are sampled for the presence or absence of wafers and/or cassettes, and appropriate responses made.
When loading wafers, robot 104 removes wafers from cassette platform 101 and performs a pre-alignment step, using pre-aligner 105 which senses a notch and/or flat(s) on the wafer. Optionally, any bar code (identifying the particular wafer) which may be present on the wafer may also be read at this time.
While the wafer is being loaded, a file of data from the defect detecting system, specifying the wafer coordinates of the detected defects, is transferred to the laser imaging system computer within housing 102 (not visible in FIG. 1), either by diskette or other media, or by communication via a link or network such as Ethernet, RS232, etc. A computer for use with laser imaging system 100 is available from Silicon Graphics in Mountain View, Calif. as part no. SGI XS24Z. A disk drive, available from Silicon Graphics in Mountain View, Calif. as part no. P3-F252, and tape drive, available from Hamilton/Avnet in Mountain View, Calif. as Maynard (Archive) 21501S, are attached within disk drive bay 106 of housing 102.
After pre-alignment, the wafer is loaded into the wafer processing area through wafer door 103 onto the optical unit's XYZ-stage (translational motion) and is secured on a conventional vacuum chuck 224 (FIG. 2). (In this description, a Cartesian coordinate system is used in description of various aspects of the system. The X and Y axes define a plane parallel to the patterned surface of the wafer and the Z-axis is perpendicular to the patterned surface of the wafer.) The system translates the wafer to the first "de-skew" point (i.e., pre-determined orientation of the wafer that accounts for the mis-orientation of the patterns on the wafer with respect to the wafer flat and the robot 104 placement error), and automatically focuses using the laser as described below. The operator accomplishes fine alignment of the wafer (de-skew point) by lining up the visible light microscope field of view with etched fiducial marks or other pre-specified structures on the wafer surface. After this precise de-skew alignment, the system can accurately translate any specified location on the wafer into the field of view of the microscope with an accuracy of a few microns.
The heart of laser imaging system 100 is the laser scanning microscopic optics module ("optics head") which includes elements 201, 202, 203, 204, 205, 207, 208, 210, 211, 212, 219, 220, 221, 222, and 223 shown in FIG. 2 below. The optics head includes a laser, confocal beam-scanning optics, and ultraviolet and visible photo detection electronics, together with commercial microscope components to achieve high quality real time confocal images. Laser imaging system 100 will produce a complete XY-scanned laser image, in a single plane of focus, at video rates. The resulting image is displayed on a high resolution monitor, also in real time. Thus, the operator can scan through different levels of focus in real time, as with a conventional microscope.
FIG. 2 is a schematic diagram of laser imaging system 100 according to the invention illustrating the operation of laser imaging system 100. Laser imaging system 100 uses the basic principles of confocal microscopy, in which illuminating light passes through a pinhole, and the image of this pinhole is then cast by the system optics on the sample to be viewed. The light scattering from the sample returns through the system optics to the pinhole, but only light from the focal plane of the imaging (objective) lens returns through the pinhole, i.e., light from the plane through the sample at which it is desired to obtain imaging data.
Laser imaging system 100 includes an air cooled, multiline argon ion laser 201 which provides up to six different wavelengths of light for imaging surfaces and structures in semiconductors. An example of a laser that can be used with the invention is the Model 2204-25ML air-cooled argon ion laser produced by Uniphase Corporation, San Jose, Calif. It is important to perform imaging with a selection of wavelengths of laser light to overcome absorption, reflection, and interference problems that can occur for a specific wavelength for a given material. That is, one wavelength will not give good results for all materials, film thicknesses, and surface properties. Additionally, in many cases, it is desirable to observe through one or more top layers of material (typically dielectric) which will reflect or absorb some wavelengths strongly, but will allow transmission of others to perform the imaging desired. Other wavelength lasers (such as Helium-Neon or Helium Cadmium) could also be used to supply light at other wavelengths.
Laser 201 produces polarized light at several discrete wavelengths. The light passes through a "notch" filter 202 mounted on a conventional computer controlled filter wheel (not shown) within optics housing section 107. Notch filter 202 isolates a laser line or lines. A notch filter for use with the invention is available from Edmund Scientific of Barrington, N.J. as part no. 43120. Other filters are available from the same source for other wavelengths.
The light having the selected wavelength(s) passes from notch filter 202 to polarizing beam splitter 203. Polarizing beam splitter 203 is attached to selectable notch filter 202 using conventional optical mounts. Polarizing beam splitter 203 preferentially reflects light only of the proper polarization and directs the light to spatial filter 204. The polarization of the light emitted from laser 201 is oriented so that most of the light is reflected by polarizing beam splitter 203 at 90 degrees into the focusing optics of spatial filter 204. A small portion of the light passes through polarizing beam splitter 203 to a conventional power monitor diode (not shown) mounted behind polarizing beam splitter 203, where the light is absorbed. A polarizing beam splitter for use with the invention is available from Melles Griot of Irvine, Calif. as part no. 03PBB003.
Spatial filter 204 consists of optics which expand the beam and then focus it on a pinhole aperture. The diameter of the pinhole aperture is selected according to well-known techniques to re-image the light through the downstream optics and a selected one of a plurality of objective lenses 205 to produce a diffraction-limited spot on wafer 206. The diameter of the pinhole aperture is also selected to allow easy alignment of the beam of light and a significant amount of high power light to pass through the aperture. A spatial filter for use with the invention is available from Melles Griot of Irvine, Calif. as Compact Spatial Filter Newport/910. Spatial filter 204 is attached to polarizing beam splitter 203 by conventional optics mounts.
Subsequent optics within spatial filter 204 and between the pinhole assembly and the scanner mirrors collimate the light, and direct the light to mirrors mounted on X-Y beam scanner 207. An X-Y beam scanner for use with the invention is available from General Scanning of Watertown, Mass. as part no. 000-3011003. X-Y beam scanner 207 is attached to spatial filter 204 by conventional optics mounts. The mirrors in X-Y beam scanner 207 can oscillate their angle with respect to the beam of light passing through X-Y beam scanner 207. X-Y beam scanner 207 includes two oscillating galvanometers, one a high speed resonant unit operating at 8 kHz, the other a servo controlled unit, operating at 13 or 26 Hz (but capable of other speeds). The servo steps in small increments, so that the X-Y beam scanner 207 traces out a raster pattern in space. A raster scan of 256 or 512 lines is produced at approximately 26 or 13 frames per second, and is imaged at the back focal plane of the tube lens 211.
This raster pattern is imaged in space by the scan lens 208 in the plane of the field lens (not shown, but between beam splitter 209 and quarter wave plate 210). A scan lens for use with the invention is available from Applied Optics of Pleasanton, Calif. as part no. 000424. Scan lens 208 is attached to X-Y beam scanner 207 by conventional optical mounts. The field lens serves to collect high angle light, providing a more uniform brightness across the raster pattern and allowing more light to reach the tube lens 211, described below, without distorting the image. The tube lens 211 and objective lenses 205, described in more detail below, are standard infinity corrected optics.
Quarter wave plate 210 is attached to scan lens 208 and is positioned to convert the linearly polarized laser light to circularly polarized laser light. A quarter wave plate for use with the invention is available from Melles Griot of Irvine, Calif. as part no. 02WRM005. Beam splitter 209 is attached to quarter wave plate 210 by a conventional optical mount, and is explained in more detail below. Tube lens 211 is attached to beam splitter 209 by a conventional optical mount and works with objective lens 205 to de-magnify the raster scanned pinhole image and project it on the wafer 206. A tube lens for use with the invention is available from Olympus of Japan as part of their vertical illuminator model SLM220.
The image of the light spot is focused and demagnified by the objective lens 205 in the focal plane of the objective lens 205. Objective lenses 205 for use with the invention are available from Olympus of Japan by specifying 100xBF 1-LM590. Many interchangeable lenses are available. Objective lenses 205 are mounted on a computer controlled motorized turret 223 that enables automatic changing of objective lenses 205 and autofocus (one lens is focused and focus offsets stored in the computer are used to automatically focus the other lenses) of each objective lens 205. A turret for use with the invention is available from Olympus of Japan as part no. BL0920. Turret 223 is designed to accommodate three to six objective lenses 205, and can handle low power (magnifications of 5, 10 and 20 times actual size) as well as medium power (magnification of 50 times actual size) and high power, high N.A. (numerical aperture, a conventional designation for the light gathering property of an objective lens in which higher numbers indicate a broader cone of gathered light) objective lenses 205 (magnifications of 100 and 150 times actual size and 0.95 N.A.). Turret 223 and a vertical illuminator containing tube lens 211 as a standard component are mounted together with a flange and held by a locking screw. The turret/illuminator assembly bolts to the optics baseplate.
According to the principles of confocal imaging, the light striking wafer 206 is scattered and a portion of the light reflected back into objective lens 205, returning through the optical path described above. As the returning light passes through quarter wave plate 210, the returning light is converted to light linearly polarized and 90° out of phase with respect to the polarization of the light originally emitted by laser 201. The light continues back along the path through the field lens, scan lens 208, and mirrors of X-Y scanner 207 until the light reaches the pinhole aperture of spatial filter 204. If the light spot was in focus on the sample, the image is imposed on the aperture. If the light spot was out of focus on the sample, very little light returns through the aperture. Consequently, signals in the confocal optics get darker, not merely blurred, as occurs with conventional optics, when the sample is out of focus. Light which passes through the aperture reaches the polarizing beam splitter 203, which, being oppositely polarized, passes through polarizing beam splitter 203 undeviated and is imaged on the photodetector 212.
By measuring the light intensity at each XY location of the raster scan, a map of light intensity in the focal plane of the objective lens 205 is constructed. This map can either be stored in the memory of system computer 214, or analyzed by surface data processor 213, which stores the readings, and makes a comparison of the intensity with previously stored maps from other scans, as described below. The light intensity map is also written directly into the video memory of the system computer 214 and may be displayed live on the computer display 215 in an appropriate window, as described below.
To obtain a three dimensional image, the optics head works with the fine z-stage control 216 to develop an expanded depth-of-field image. The sample height is stepped over a pre-selected vertical interval (typically 12 nm or some multiple thereof) using the fine z-stage control 216. After each complete raster scan at a particular sample height, the height of the sample is changed using fine z-stage control 216, and a new raster scan performed, as described above, to obtain a map of light intensity in the focal plane of objective lens 205 (at the new sample height) by measuring the light intensity at each XY location of the raster scan.
X-Y stage control 218 is used to position the defect or region of interest in the field of view. The X-Y stage control is then held still while the fine z-stage control 216 is used as described above.
A three-dimensional image can be obtained from the multiple XY light intensity maps in one of two ways. First, as noted above, the XY data from each raster scan can be analyzed by surface data processor 213 by comparing the light intensity at each point of the XY scan with corresponding points of a "master map." This "master map" stores the maximum light intensity values found at each XY point, these values resulting from previous comparisons of XY light intensity maps. The Z-axis location of the maximum light intensity at each XY location is also stored. After all of the XY light intensity maps have been obtained and compared to the "master map," the data representing the light intensity maximum at each XY location and the Z-axis location of each light intensity maximum are used to construct the three-dimensional image of the wafer surface. With this method, it takes about 5 seconds to acquire all of the light intensity data and extract the surface.
Alternatively, especially if the wafer is multilayered, i.e., producing multiple peaks at each XY location along the Z-axis (which might occur, for instance, where transparent layers are formed), each light intensity map can be stored in system computer 214, along with the Z-axis height of each map. If it is desired to create a three-dimensional image of the surface of the wafer, the XY light intensity maps are successively compared to determine the maximum light intensity at each XY location. The Z-axis location of the maximum light intensity at each XY location is stored and, at the conclusion of the series of comparisons of the XY light intensity maps, is used with the maximum light intensity data to construct the three-dimensional image of the wafer surface. With this method, it takes about 35 seconds to acquire all of the light intensity data, then extract the surface using a processor in system computer 214.
A process for constructing a three-dimensional image of a surface from a three-dimensional data set is described in more detail in commonly owned, co-pending U.S. patent application entitled "Surface Extraction from a Three-Dimensional Data Set," by Ken K. Lee, application Ser. No. 08/079,193, filed on the same date as the present application, the pertinent disclosure of which is hereby incorporated by reference.
The raster scan is repeated 13 times per second for a 512 by 512 pixel image, or faster for smaller (i.e., fewer pixels such as 256 by 256) images. (Note that raster scan sizes other than 512 by 512 or 256 by 256 can be used.) A complete three-dimensional volume data set will typically include 64 raster scans (other numbers can be used), for a total data array of size 512 by 512 by 64. For a 512 by 512 pixel image, the total time to accumulate the data to construct the three-dimensional image of the surface (assuming 64 raster scans, i.e., vertical height steps) is approximately five seconds.
The light intensity at each data point is stored in system computer 214 as an 8-bit quantity. A simple map of a three-dimensional surface is created using the three-dimensional graphics (such as the Silicon Graphics Inc. Graphics Library, available as part of the XS24Z computer package) of system computer 214 by plotting the X, Y, and Z position of each maximum intensity point, and displaying the map as a continuous surface. The brightness of each point on the surface is determined by the light intensity measured at that point. The map display may be done in gray scale, in false color converted from the gray scale, in a mode showing shape (position) only, or shape with height represented in gray scale.
The capacity for white light imaging, in addition to the laser imaging described above, is another feature of laser imaging system 100. As noted above, beam splitter 209 is attached between quarter wave plate 210 and tube lens 211. By imposing beam splitter 209 in the path of light from laser 201 just prior to tube lens 211, and using suitable filtering that blocks the reflected laser light but lets other wavelengths pass to the video camera, a conventional microscope image can be obtained, in addition to the laser image, by using a conventional microscope illuminator 220 and video camera 219, charge coupled device (CCD). The white light imaging is accomplished without the use of microscope eyepieces that would result in undesirable proximity of the operator to the wafer being analyzed that may result in contamination of the wafer. Rather, the microscope image is displayed on a computer display (simultaneously with the laser image, if desired), either in a separate window on computer display 215, using software described in more detail below, or on a separate video monitor display (not shown).
The white light microscope image is produced alone or simultaneously with the live laser image by video camera 219 available from COHV of Danville, Calif. as part no. 8215-1000 which views the sample in white light emitted by microscope illuminator 220, and inserted into the optical path by beam splitter 221. A microscope illuminator for use with the invention is available from Olympus of Japan as part no. 5LM220. A beam splitter for use with the invention is available from Melles Griot of Irvine, Calif. as part no. 03BSC007. Filter 222 blocks the laser line in use, but passes broad bands of light having other wavelengths, so that laser light from laser 201 is prevented from saturating the image at video camera 219 with reflected light. A filter for use with the invention is available from Edmund Scientific of Barrington, N.J. as part no. 22754. Video camera 219 and filter wheel 222 are mounted on brackets which position video camera 219 and filter 222 in line with beam splitter 221. Beam splitter 221 is mounted on the turret assembly with conventional optical mounts.
To get a white light image alone, laser imaging system 100 can remove beam-splitter 221 and substitute a mirror (not shown) so that only the video camera light path is active. Then, the blocking filter (mounted on a filter wheel) can be removed and the full spectrum white light image viewed.
FIGS. 3A, 3B, and 3C combined are a schematic diagram of the electronics associated with laser imaging system 100. FIGS. 3A, 3B and 3C show all analog and digital electronics, plus power supplies, for complete operation of laser imaging system 100. Laser imaging system 100 operates on 220 volts (200-240 volt nominal), 50/60 Hz single phase electric power (or the European and Japanese equivalents).
The SDP Frame Grabber 301 interfaces with photo detector 212 (FIG. 2) and is synchronized with the scanner electronics 309, and fine z-stage control 310, to digitize the photodetector data and produce a three-dimensional map of light intensity which can either be stored directly in the computer memory, or processed to immediately extract a surface image. The SDP Frame Grabber 301 interfaces through the SDP interface 302 to the system computer 303 (also shown as 214 in FIG. 2). SDP Frame Grabber 301 is fast and enables surface data to be extracted from the volume data.
The system computer 303 is a high speed RISC graphical workstation, such as a Silicon Graphics Iris Indigo XS24Z manufactured by Silicon Graphics of Mountain View, Calif., or equivalent, capable of handling concurrent tasks of robot functions, stage motion, operator interface, and optics control, while also performing image processing functions. In addition, system computer 303 must work with a windowing user interface and high resolution color graphics.
The X, Y, and coarse Z stage controllers 304 communicate with system computer 303 via an RS-232C interface 305, as do the robot and pre-aligner controllers 306.
The balance of the system electronic functions communicate through Local Operating Network (LON) interface 307 built on the same interface slot as RS-232C interface 305. The LON 308 itself is a pair of wires that plug into each node serially around the system. Each node contains a local processor and firmware for LON communications, self diagnosis, and local operation of certain functions.
All user interface is via an operator console that is part of system computer 303 and which includes computer display 215, a mouse/trackball, a joystick controller, and a keyboard. The operator console may optionally be remotely mounted (i.e., outside the cleanroom). Image processing and analysis functions may be controlled from the console. Through these controls and the windowing software, the operator can set up, program and operate any part of laser imaging system 100 including wafer selection and handling, defect editing and selection, automatic and/or manual wafer loading, defect classification, etc. For example, the joystick controller allows the user to move the coarse Z-stage control 217 in small increments, to bring an object or region of interest on the wafer into view. Alternatively, for enhanced ease in making very small lateral movements, the operator can use the mouse to point and click to cause the X-Y stage control 218 to change position.
The operator has three modes from which to select viewing: white-light conventional microscope optics ("white light mode"), real time laser scanning optics ("laser mode"), or both laser and white light optics simultaneously ("combination mode"). In white light mode, the operator can select from one of several objective lenses, varying effective magnification of the image. (The laser image scales simultaneously with the white-light image.)
Laser or white light imaging of a region of the wafer produces data regarding the wafer characteristics in the imaged region. The data is stored on system computer 214. After imaging of a region of the wafer, the operator examines each defect image as laser imaging system 100 presents it to him. If the defect is not in view (if, for instance, the defect location data from the wafer scanner is slightly erroneous), or the operator wishes to examine a larger or different area, the joystick controller allows him to "cruise" the wafer. After the operator examines the defect, the operator classifies the defect, optionally records the image, and proceeds to examine the next defect. Upon completion of review of all desired defects, or other inspection tasks, the wafer is returned to its cassette, and the next wafer loaded, repeating the process above.
In the live laser image, presented in a particular window of the screen of computer display 215, as explained in more detail below, the operator sees a real-time narrow depth of field laser image, which may be zoomed to higher effective magnifications. The operator can translate the sample in the Z-direction (vertical direction) to cover an entire vertical region of interest. The operator can also select a range of vertical motion, and have laser imaging system 100 construct a 3-dimensional image of the region specified. Automatic ranging (automatic selection of vertical distance to traverse in obtaining imaging data), automatic focus (automatic focusing of objective lens at desired vertical location) and automatic gain control (automatic adjustment of the photodetector gain to compensate for differences in the reflectivity of the wafer) may also be employed to automate most of the operator's tasks in acquiring the three-dimensional image. The three-dimensional image may be examined in pseudocolor, profiled, shadowed, rotated, etc.
The user can utilize laser imaging system 100 as a white light microscope. The microscope view is presented in a different window than the laser view. In white light mode, the user can select views (e.g., two-dimensional), translate (X-Y movement) and focus on details (Z-direction movement), change objective lens magnification.
The overall system software is designed for operation of laser imaging system 100 in both operator and engineering mode, optionally using defect files supplied by various wafer scanners in a variety of formats. Both operator and engineering mode are password protected separately, as explained in more detail below.
In engineering mode, the user can use a recipe development editor to develop recipes for routine inspection of specified types of wafers at specific process steps for that wafer, i.e., to pre-specify operating parameters for use by operators working on a specific process level and product. The recipes can specify which screen and windows are to be used, enable the laser wavelength and power to be used to be selected, specification of the number of slices of data and their spacing (in nanometers), autofocus to be specified, and the offset in the z-direction (vertical direction) from the autofocus position to the ideal viewing position to be preset.
Engineering mode also allows access to system maintenance functions such as utilizing the LON access to run diagnostic checks on the electronics or recalibrate XY and Z stage motion
In operator mode, the operator loads, inspects and classifies lots of wafers per the predetermined recipe associated with the particular lot number and wafer ID. The operator has limited options to alter the inspection sequence.
Utilities are available in pop-up menus to enable manual control of the fine Z-stage control 216, coarse Z-stage control 217 and X-Y stage control 218, polling of stage variables, and robot manual control (e.g., to allow movement of a wafer from the flat finder or stage after a power failure). Diagnostics can also be called up via a pop-up window displaying all LON nodes and system variables. The status of LON nodes can be checked and revised. From the display of LON nodes, direct control of system functions, e.g., open and close the laser shutter, can be accomplished.
As an aid to workers reviewing defects (especially during production), laser imaging system 100 has the capability to store wafer images and to bring them up in Library windows. These images are usually stored as bit maps and can be used to represent typical defects for comparison by the operator with the defect currently being classified. Laser imaging system 100 can be configured to bring up such images automatically as different defect classifications are selected. Bit map images from other devices, such as white light microscopes or SEMs can also be stored and recalled, for comparison between inspection systems, thus enabling the operator to compare the image produced by laser imaging system 100 with familiar images. The bit maps can be displayed in special windows to help operators classify defects.
The system software includes different levels of password protection. At one level, engineering personnel can access laser imaging system 100 to set up predetermined recipes for screen configuration, laser scan parameters, and defect codes. At a different level, operators can access laser imaging system 100 to call up the recipe for the particular wafer level and product being used in order to examine defects on wafers to be inspected. This feature, combined with automatic focus, ranging, and gain control, allows competent operation of laser imaging system 100 with a minimum of operator training.
Laser imaging system 100 uses an Ethernet interface that supports standard file transfer and management (data and recipe upload/download, etc.). Laser imaging system 100 includes software for generating output report files for use by data analysis (trending, statistical analysis, etc.) software as well as printed reports. A number of confocal images may be stored in files for subsequent review on or off line from laser imaging system 100.
As noted above, laser imaging system 100 includes computer display 215. Computer display 215 displays pictorial and numerical results of the analysis of the defects on the semiconductor chips, and lists menu selections for control of laser imaging system 100. Laser imaging system 100 provides the capacity for displaying any number of different display screens on computer display 215. Each display screen is defined by the number, type, size and location of the windows included within the display screen. The number of windows that can be displayed on a display screen is limited only by the size of the windows to be displayed. Generally, the types of windows that can be displayed on each screen are icon windows, picture windows and information windows.
FIG. 4 is a view of display screen 400 resulting from analysis of an area of the surface of a semiconductor chip by laser imaging system 100. Display screen 400 includes a plurality of windows of various types. In FIG. 4, windows 401a, 401b, 401c, 401d, 401e, 401f and 401g are icon windows; windows 402a, 402b, 402c are picture windows; and window 403 is an information window.
In FIG. 4, the icon windows list choices for pictorial display in the picture windows. For instance, icon windows 401a and 401d command display of a two-dimensional image in one of the pictorial windows, e.g., the surface profile seen in window 402b or the planar surface view seen in FIG. 402a. Icon window 401e commands display of a three-dimensional image in one of the pictorial windows, e.g., the three-dimensional surface image seen in window 402c. The pictorial windows 402a, 402b and 402c show two or three-dimensional images of the semiconductor chip being analyzed, as discussed above. The information window 403 gives tabular information regarding the size and location of particular defects on the chip and is describe in more detail below.
Laser imaging system 100 includes a number of predefined screens (in one embodiment, on the order of 4-5 screens), i.e., screens having windows of a pre-determined type and size located at pre-determined locations. However, laser imaging system 100 includes the capability for a user to define an unlimited number of screens, each screen having any desired combination of windows according to window type, window size and window location.
The screen (window and arrangement of windows) to be displayed is selected by the operator. For each screen, each pictorial window is stored as an icon window when not in use. Windows in different regions of the screen may be interchanged by "clicking and dragging" the window to the new location.
The Microscope Window contains a live video presentation of the white-light image taken from the wafer surface through the microscope objective lens. This image may be viewed simultaneously with the laser image or can be view in white-light only mode for optimum viewing of the white-light image.
The Laser Window directly displays the live laser image produced by the scanning laser beam. Controls for changing the focus of the laser through its range are available. Additional controls include autofocus, laser intensity, zoom, number of slices to utilize for a three-dimensional image, and the step size of three-dimensional image slices, plus other imaging control features.
The 2-D Window utilizes the acquired three-dimensional surface image, and presents a two-dimensional image of a slice through the three-dimensional data. In "XY" mode, the 2-D Window displays a top view in false color of the wafer surface, i.e., a projection of an effectively infinite depth of field image of the wafer surface. In "XZ" and "YZ" modes, the surface image is represented as surface profiles of selected vertical slices. In the two-dimensional images, a rubber band metrology box (i.e., a variable size cursor box) can be used to determine the size (in the plane chosen) of the defect. In "cut" mode, the "XY" mode view includes cursor lines which can be controlled by, for instance, a mouse to select "XZ" mode or "YZ" mode slices. If the 2-D Window is used with a volume data set rather than a surface data set, the "XY" mode display shows a single slice scan of data, rather than a surface outline. The "XZ" mode and "YZ" mode show vertical cuts through the data set. Special options allow profiles of volume data sets to show multiple layer structures. This occurs by analyzing volume data from multilayer semi-transparent samples.
The 3-D Window projects a perspective view of the surface image. The 3-D Window may be rotated, tilted, zoomed, shaded, etc. by the operator to obtain a desired image for analysis.
The Wafer Map Window displays the defect map of the wafer under inspection, the defect map having been produced by a wafer scanner that is not part of laser imaging system 100. Defects are shown as a color-to-size coded dot on the screen. The operator can select a defect to revisit by, for instance, using a mouse to "point and click" on the defect. A rubber band metrology box may be used to display a portion of the defect map to higher precision in an enlarged view. Alternatively, a list of defects can be brought up in a pop-up text window (the defect locations are given as coordinates of a Cartesian coordinate system), scrolled through and selected directly by highlighting items on the list.
The Cassette Map Window diagrammatically represents a loaded cassette. The operator can select and load any wafer from the cassette by, for instance, using a mouse to "point and click" on the wafer. The operator can also unload the wafer to a cassette on the cassette platform 101 of laser imaging system 100.
There is a major advantage to using a laser with multiple lines to image surfaces, to account for different reflectivities and absorption. It is always a problem to focus microscopes automatically. Confocal optics are a natural way to perform an autofocus due to the extremely narrow depth of field. However, a single spot autofocus may not work well if a very dark spot on the sample is being imaged. By scanning the laser spot in real-time, and averaging over the return signal, a much more reliable autofocus is obtained. If a particular material is strongly absorbing, different wavelengths may be selected. Alternatively, a laser filter may be used which transmits each wavelength of the laser inversely proportionally to the intensity of the wavelength and so illuminates the sample with multiline laser light which is sure to select at least one wavelength which reflects strongly. In a simpler mode, the laser can be used with no filter, and the computer can adjust laser power and photodetector gain to achieve a good autofocus.
False color can be used to see small defects, either on the surface or under the surface. By converting images to false color from black and white, very small objects may be detected that would otherwise go unnoticed, because the human eye can discern thousands of separate hues, while small differences in brightness are hard for the eye to detect. This is one way in which laser imaging system 100 exceeds the "Rayleigh Criterion" (a common measure of resolution) in its ability to see structures on the order of 0.1 to 0.2 micron size. Other aids in small feature detection are the improvement in resolution obtained with confocal optics, and the oversampling (overlapping images) performed by laser imaging system 100 that enables detection of features as small as 0.1 to 0.2 microns.
As an option, the laser optics can be used to obtain a fluorescence image of the wafer, detecting visible light in preselected wavelength bands. Fluorescence using white light or laser light in the same system is possible. Illuminating light of selected wavelengths will fluoresce certain materials, such as skin flakes or photoresist, the material emitting light at a longer wavelength. Suitable filters in front of the video camera block the illuminating radiation wavelength, but pass the longer wavelength, thus enabling identification of the material. This may also be done with the laser, fluorescing with a short wavelength, and placing a filter passing the longer wavelengths in front of the photo detector 212.
Polarized light images of objects or structures on the sample may be taken by illuminating the objects or structures with polarized white light and viewing the sample through a cross polarized filter. Optically active materials such as quartz will appear bright against the dark polarization extinction background. Optional brightfield/dark field objective lenses and illumination may be used to help locate particles and other defects on the wafer surface.
The same technique may be used with the confocal optics, by using linearly polarized light. Inserting a second quarter wave plate in the beam adds another 90 degree rotation, so that reflected light from the sample no longer passes to the detector, but light further rotated by passing through the optically active medium is allowed to pass and shows as a bright spot on the live laser scan.
A second major use of conventional microscope stations, different from the review or "revisit" function, is the more general defect detection function, where preselected sites on a wafer are inspected for efficacy of a previous process step. Laser imaging system 100 according to the invention is directly usable for this application, which faces exactly the same problems as defect imaging: decreasing size of objects of interest, a lack of resolution, and the need for three-dimensional imaging. The hardware required is exactly the same, as is the system control software. Only a variation in the application software is needed, so that predetermined inspection sites may be specified instead of defect map sites.
Overlay registration is another possible use of laser imaging system 100. Laser imaging system 100 can view photoresist layers on top of underlying structures to ascertain accuracy of placement of the photoresist layer with respect to features of the underlying structures.
Laser imaging system 100 can also be used to view through transparent (e.g., dielectric or glass) layers to allow determination of the vertical site of defects, or to provide some specialized inspection. For example, stress voids in metal layers below dielectric layers can be viewed. The depth of metal plugs in glass insulators can also be seen.
In its simplest mode, laser imaging system 100 works on opaque, diffusely scattering surfaces.
The laser imaging system according to the invention is unique in its capability for combining live video, live laser scan, three-dimensional imaging, wafer maps, and wafer surface profiles all on one screen. By selecting screens with different size and composition of windows the operator may view all the relative data needed for completion of his task.
The system according to the invention can be easily adapted for use in other materials science industries such as production of magnetic media, thin film heads, flat panel displays, etc. The necessary adaptations to laser imaging system 100 would include some software changes and some changes in the material handling system.
Appendix A accompanying this specification is a draft User's Manual for laser imaging system 100 and is herein incorporated by reference.
Various embodiments of the invention have been described. The descriptions are intended to be illustrative, not limitative. Thus, it will be apparent to one skilled in the art that certain modifications may be made to the invention as described without departing from the scope of the claims set out below.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US2758502 *||Oct 8, 1952||Aug 14, 1956||Perkin Elmer Corp||Means for oscillating a beam in a plane|
|US2969708 *||Apr 3, 1957||Jan 31, 1961||American Optical Corp||Means for analyzing microscopic particles and the like|
|US3013467 *||Nov 7, 1957||Dec 19, 1961||Marvin Minsky||Microscopy apparatus|
|US3049047 *||Dec 5, 1960||Aug 14, 1962||American Optical Corp||Method for analyzing microscopic particles and the like|
|US3187627 *||Oct 3, 1960||Jun 8, 1965||American Optical Corp||Microscope and recording optical systems utilizing tapered light conducting fiber bundles|
|US3360659 *||Apr 23, 1964||Dec 26, 1967||Outlook Engineering Corp||Compensated optical scanning system|
|US3497694 *||Jan 9, 1967||Feb 24, 1970||Vyzk Ustav Matemat Stroju||Optical scanning head with four optical transmission lines and photosensors|
|US3602572 *||Dec 3, 1968||Aug 31, 1971||Westinghouse Electric Corp||Two-dimensional optical beam scanner|
|US3705755 *||Aug 24, 1970||Dec 12, 1972||Baer Stephen Charles||Microscopy apparatus|
|US3719776 *||Aug 11, 1970||Mar 6, 1973||Hitachi Ltd||Apparatus for photographing an image of a specimen|
|US3764512 *||May 2, 1972||Oct 9, 1973||Singer Co||Laser scanning electrophoresis instrument and system|
|US3775735 *||May 1, 1972||Nov 27, 1973||Us Navy||Apparatus for scanning an underwater area|
|US3782823 *||Mar 23, 1972||Jan 1, 1974||American Optical Corp||Laser microprobe|
|US3790281 *||Feb 26, 1973||Feb 5, 1974||Zenith Radio Corp||Combined system for acoustical-optical microscopy|
|US3813140 *||Dec 13, 1971||May 28, 1974||Bendix Corp||Rotating prism scanning system having range compensation|
|US3926500 *||Dec 2, 1974||Dec 16, 1975||Ibm||Method of increasing the depth of focus and or the resolution of light microscopes by illuminating and imaging through a diaphragm with pinhole apertures|
|US3947628 *||Aug 21, 1974||Mar 30, 1976||Imant Karlovich Alien||Device for selective search of objects using images thereof|
|US3980818 *||Jun 27, 1974||Sep 14, 1976||Sydnor-Barent, Inc.||Recorder and reproducer system|
|US4045772 *||Apr 22, 1976||Aug 30, 1977||Geometric Data Corporation||Automatic focusing system|
|US4063226 *||Dec 31, 1975||Dec 13, 1977||Harris Corporation||Optical information storage system|
|US4068381 *||Oct 29, 1976||Jan 17, 1978||The United States Of America As Represented By The Secretary Of Commerce||Scanning electron microscope micrometer scale and method for fabricating same|
|US4125828 *||Jul 17, 1975||Nov 14, 1978||Med-El Inc.||Method and apparatus for automated classification and analysis of cells|
|US4141032 *||Jun 9, 1977||Feb 20, 1979||Ernst Leitz Wetzlar Gmbh||Method of and apparatus for the expansion of the range of the depth of focus beyond the limit given by conventional images|
|US4160263 *||May 15, 1978||Jul 3, 1979||George R. Cogar||Dual or multiple objective video microscope for superimposing spaced images|
|US4194217 *||Mar 31, 1978||Mar 18, 1980||Bosch Francois J G Van Den||Method and apparatus for in-vivo spectroscopic analysis|
|US4198571 *||Apr 24, 1978||Apr 15, 1980||National Research Development Corporation||Scanning microscopes|
|US4207554 *||Aug 24, 1978||Jun 10, 1980||Med-El Inc.||Method and apparatus for automated classification and analysis of cells|
|US4211924 *||Jan 29, 1979||Jul 8, 1980||Siemens Aktiengesellschaft||Transmission-type scanning charged-particle beam microscope|
|US4218112 *||Jul 3, 1978||Aug 19, 1980||C. Reichert Optische Werke, Ag||Photometer microscope for microphotometer scanning of fine specimen structures|
|US4223354 *||Aug 30, 1978||Sep 16, 1980||General Electric Company||Phase corrected raster scanned light modulator and a variable frequency oscillator for effecting phase correction|
|US4236179 *||Jun 29, 1979||Nov 25, 1980||International Business Machines Corporation||Versatile microsecond multiple framing camera|
|US4255971 *||Nov 1, 1978||Mar 17, 1981||Allan Rosencwaig||Thermoacoustic microscopy|
|US4284897 *||Mar 13, 1978||Aug 18, 1981||Olympus Optical Company Ltd.||Fluorescence determining microscope utilizing laser light|
|US4311358 *||Oct 25, 1979||Jan 19, 1982||De Forenede Bryggerier A/S||Illumination device for fluorescence microscopes|
|US4314763 *||Jan 4, 1979||Feb 9, 1982||Rca Corporation||Defect detection system|
|US4343993 *||Sep 12, 1980||Aug 10, 1982||International Business Machines Corporation||Scanning tunneling microscope|
|US4350892 *||Jul 31, 1980||Sep 21, 1982||Research Corporation||X'-, Y'-, Z'- axis multidimensional slit-scan flow system|
|US4354114 *||Oct 9, 1979||Oct 12, 1982||Karnaukhov Valery N||Apparatus for investigation of fluorescence characteristics of microscopic objects|
|US4366380 *||Mar 12, 1981||Dec 28, 1982||George Mirkin||Method and apparatus for structural analysis|
|US4379135 *||Oct 1, 1981||Apr 5, 1983||Lion Corporation||Method for enumeration of oral gram-negative bacteria|
|US4379231 *||Mar 12, 1980||Apr 5, 1983||Hitachi, Ltd.||Electron microscope|
|US4405237 *||Feb 4, 1981||Sep 20, 1983||The United States Of America As Represented By The Secretary Of The Navy||Coherent anti-Stokes Raman device|
|US4406015 *||Apr 28, 1981||Sep 20, 1983||Kabushiki Kaisha Daini Seikosha||Fluorescent X-ray film thickness gauge|
|US4406525 *||Nov 7, 1980||Sep 27, 1983||Asahi Kogaku Kogyo Kabushiki Kaisha||Light beam scanning device|
|US4407008 *||Oct 7, 1981||Sep 27, 1983||Carl Zeiss-Stiftung||Method and apparatus for light-induced scanning-microscope display of specimen parameters and of their distribution|
|US4455485 *||Nov 25, 1981||Jun 19, 1984||Hitachi, Ltd.||Laser beam scanning system|
|US4485409 *||Mar 29, 1982||Nov 27, 1984||Measuronics Corporation||Data acquisition system for large format video display|
|US4549204 *||Nov 23, 1982||Oct 22, 1985||The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland||Diffraction limited imaging systems|
|US4631581 *||Feb 21, 1985||Dec 23, 1986||Sarastro Ab||Method and apparatus for microphotometering microscope specimens|
|US4636069 *||Nov 15, 1984||Jan 13, 1987||Matrix Instruments Inc.||Method for reading deformation images on electrophotographic media|
|US4733063 *||Dec 15, 1986||Mar 22, 1988||Hitachi, Ltd.||Scanning laser microscope with aperture alignment|
|US4827125 *||Apr 29, 1987||May 2, 1989||The United States Of America As Represented By The Secretary Of The Department Of Health And Human Services||Confocal scanning laser microscope having no moving parts|
|US4863226 *||Mar 10, 1988||Sep 5, 1989||Nederlandse Organisatie Voor Toegepas - Natuurwetenschappelijk Onderzoek Tno||Confocal laser scanning microscope|
|US5034613 *||Nov 14, 1989||Jul 23, 1991||Cornell Research Foundation, Inc.||Two-photon laser microscopy|
|US5035476 *||Jun 15, 1990||Jul 30, 1991||Hamamatsu Photonics K.K.||Confocal laser scanning transmission microscope|
|US5046847 *||Oct 25, 1988||Sep 10, 1991||Hitachi Ltd.||Method for detecting foreign matter and device for realizing same|
|US5091652 *||Jun 1, 1990||Feb 25, 1992||The Regents Of The University Of California||Laser excited confocal microscope fluorescence scanner and method|
|US5117466 *||Apr 30, 1991||May 26, 1992||The United States Of America As Represented By The United States Department Of Energy||Integrated fluorescence analysis system|
|US5122653 *||Aug 9, 1990||Jun 16, 1992||Nikon Corporation||Confocal type laser scan microscope with integrated illumination, detection and waveguide system|
|US5127726 *||May 19, 1989||Jul 7, 1992||Eastman Kodak Company||Method and apparatus for low angle, high resolution surface inspection|
|US5127730 *||Aug 10, 1990||Jul 7, 1992||Regents Of The University Of Minnesota||Multi-color laser scanning confocal imaging system|
|US5153428 *||Feb 24, 1992||Oct 6, 1992||Hamamatsu Photonics K.K.||Confocal laser scanning microscope having relay lens and a slit for removing stray light|
|US5162641 *||Feb 19, 1991||Nov 10, 1992||Phoenix Laser Systems, Inc.||System and method for detecting, correcting and measuring depth movement of target tissue in a laser surgical system|
|USRE34214 *||Dec 21, 1988||Apr 6, 1993||Molecular Dynamics, Inc.||Method and apparatus for microphotometering microscope specimens|
|EP0052892A2 *||Nov 26, 1981||Jun 2, 1982||Hitachi, Ltd.||Laser beam scanning system|
|EP0112401A1 *||Dec 27, 1982||Jul 4, 1984||International Business Machines Corporation||Optical near-field scanning microscope|
|EP0155247A2 *||Feb 19, 1985||Sep 18, 1985||Molecular Dynamics||A method for microphotometering microscope specimens|
|GB1185839A *||Title not available|
|GB2132852A *||Title not available|
|GB2152697A *||Title not available|
|GB2184321A *||Title not available|
|WO1979001027A1 *||May 2, 1979||Nov 29, 1979||C Koester||Scanning microscopic apparatus|
|1||A. Boyde et al., "Tandem Scanning Reflected Light Microscopy of Internal Features in Whole Bone and Tooth Samples," Journal of Microscopy, vol. 132, Pt. 1, Oct. 1983, pp. 1-7.|
|2||*||A. Boyde et al., Tandem Scanning Reflected Light Microscopy of Internal Features in Whole Bone and Tooth Samples, Journal of Microscopy, vol. 132, Pt. 1, Oct. 1983, pp. 1 7.|
|3||A. F. Slomba et al., "A Laser Flying Spot Scanner for Use in Automated Fluorescence Antibody Instrumentation," Journal of The Association For The Advancement of Medical Instrumentation, vol. 6, No. 3, May-Jun. 1972, pp. 230-234.|
|4||*||A. F. Slomba et al., A Laser Flying Spot Scanner for Use in Automated Fluorescence Antibody Instrumentation, Journal of The Association For The Advancement of Medical Instrumentation, vol. 6, No. 3, May Jun. 1972, pp. 230 234.|
|5||C. J. R. Sheppard et al., "Depth of Field in the Scanning Microscope," Optics Letters, vol. 3, No. 3, Sep. 1978, pp. 115-117.|
|6||C. J. R. Sheppard et al., "Optical Microscopy with Extended Depth of Field," Proc. R. Soc. Lond. A, vol. 387, 1983, pp. 171-186.|
|7||*||C. J. R. Sheppard et al., Depth of Field in the Scanning Microscope, Optics Letters, vol. 3, No. 3, Sep. 1978, pp. 115 117.|
|8||*||C. J. R. Sheppard et al., Optical Microscopy with Extended Depth of Field, Proc. R. Soc. Lond. A, vol. 387, 1983, pp. 171 186.|
|9||D. K. Hamilton et al., "Experimental Observations of the Depth-Discrimination Properties of Scanning Microscopes," Optics Letters, Dec. 1981, vol. 6, No. 12, pp. 625-626.|
|10||D. K. Hamilton et al., "Three-Dimensional Surface Measurement Using the Confocal Scanning Microscope," Applied Physics B 27, 1982, pp. 211-213.|
|11||*||D. K. Hamilton et al., Experimental Observations of the Depth Discrimination Properties of Scanning Microscopes, Optics Letters, Dec. 1981, vol. 6, No. 12, pp. 625 626.|
|12||*||D. K. Hamilton et al., Three Dimensional Surface Measurement Using the Confocal Scanning Microscope, Applied Physics B 27, 1982, pp. 211 213.|
|13||David A. Agard, "Three-Dimensional Architecture of a Polytene Nucleus," Nature, vol. 302, Apr. 21, 1983, pp. 676-680.|
|14||*||David A. Agard, Three Dimensional Architecture of a Polytene Nucleus, Nature, vol. 302, Apr. 21, 1983, pp. 676 680.|
|15||*||Eric A. Ash (edited by), Scanned Image Microscopy, Academic Press, 1980, pp. 183 225.|
|16||Eric A. Ash (edited by), Scanned Image Microscopy, Academic Press, 1980, pp. 183-225.|
|17||G. J. Brakenhoff et al., "Confocal Scanning Light Microscopy with High Aperture Immersion Lenses," Journal of Microscopy, vol. 117, pt. 2, Nov. 1979, pp. 219-232.|
|18||*||G. J. Brakenhoff et al., Confocal Scanning Light Microscopy with High Aperture Immersion Lenses, Journal of Microscopy, vol. 117, pt. 2, Nov. 1979, pp. 219 232.|
|19||G. J. Brakenhoff, "Imaging Modes In Confocal Scanning Light Microscopy (CSLM)," Journal of Microscopy, vol. 117, pt. 2, Nov. 1979, pp. 233-242.|
|20||*||G. J. Brakenhoff, Imaging Modes In Confocal Scanning Light Microscopy (CSLM), Journal of Microscopy, vol. 117, pt. 2, Nov. 1979, pp. 233 242.|
|21||H. J. B. Marsman et al., "Mechanical Scan System for Microscopic Applications," Review of Scientific Instruments, vol. 54, Aug. 1983, pp. 1047-1052.|
|22||*||H. J. B. Marsman et al., Mechanical Scan System for Microscopic Applications, Review of Scientific Instruments, vol. 54, Aug. 1983, pp. 1047 1052.|
|23||H. M. Nier, "Automatic Moving Part Measuring Equipment," IBM Technical Disclosure Bulletin, vol. 22, No. 7, Dec. 1979, pp. 2856-2857.|
|24||*||H. M. Nier, Automatic Moving Part Measuring Equipment, IBM Technical Disclosure Bulletin, vol. 22, No. 7, Dec. 1979, pp. 2856 2857.|
|25||I. J. Cox et al., "Digital Image Processing of Confocal Images," Image And Vision Computing, 1983 Butterworth & Co. (Publishers) Ltd., pp. 52-56.|
|26||I. J. Cox et al., "Scanning Optical Microscope Incorporating a Digital Framestore and Microcomputer," 2219 Applied Optics, vol. 22, May 1983, No. 10, pp. 1474-1478.|
|27||*||I. J. Cox et al., Digital Image Processing of Confocal Images, Image And Vision Computing, 1983 Butterworth & Co. (Publishers) Ltd., pp. 52 56.|
|28||*||I. J. Cox et al., Scanning Optical Microscope Incorporating a Digital Framestore and Microcomputer, 2219 Applied Optics, vol. 22, May 1983, No. 10, pp. 1474 1478.|
|29||I. J. Cox, "Electronic Image Processing of Scanning Optical Microscope Images," International Conference on Electronic Image Processing, Jul. 26-28, 1982, pp. 101-104.|
|30||*||I. J. Cox, Electronic Image Processing of Scanning Optical Microscope Images, International Conference on Electronic Image Processing, Jul. 26 28, 1982, pp. 101 104.|
|31||*||IBM Tech. Disclosure Bulletin, vol. 18, No. 12, 1976, p. 1474.|
|32||*||Kenneth R. Castleman, Digital Image Processing, 1979 Prentice Hall, Inc., 1979, pp. 351 359.|
|33||Kenneth R. Castleman, Digital Image Processing, 1979 Prentice-Hall, Inc., 1979, pp. 351-359.|
|34||Mojmir Petran et al. "Tandem-Scanning Reflected Light Microscope," Journal of the Optical Society of America, vol. 58, No. 5, May 1968, pp. 661-664.|
|35||*||Mojmir Petran et al. Tandem Scanning Reflected Light Microscope, Journal of the Optical Society of America, vol. 58, No. 5, May 1968, pp. 661 664.|
|36||N. Aslund et al., "PHOIBOS, A Microscope Scanner Designed for Micro-Fluorometric Applications, Using Laser Induced Fluorescence," Physics IV, Royal Institute of Technology, S-100 44 Stockholm 70, (1983 Publication), pp. 338-343.|
|37||*||N. Aslund et al., PHOIBOS, A Microscope Scanner Designed for Micro Fluorometric Applications, Using Laser Induced Fluorescence, Physics IV, Royal Institute of Technology, S 100 44 Stockholm 70, (1983 Publication), pp. 338 343.|
|38||P. Davidovits et al., "Scanning Laser Microscope for Biological Investigations," Applied Optics, vol. 10, No. 7, Jul. 1971, pp. 1615-1619.|
|39||*||P. Davidovits et al., Scanning Laser Microscope for Biological Investigations, Applied Optics, vol. 10, No. 7, Jul. 1971, pp. 1615 1619.|
|40||Paul Davidovits et al., "Scanning Laser Microscope," Nature, vol. 223, Aug. 23, 1969, p. 831.|
|41||*||Paul Davidovits et al., Scanning Laser Microscope, Nature, vol. 223, Aug. 23, 1969, p. 831.|
|42||Philip G. Stein, "Image-Analyzing Microscopes," Analytical Chemistry, vol. 42, No. 13, Nov. 1970, pp. 103A-106A.|
|43||*||Philip G. Stein, Image Analyzing Microscopes, Analytical Chemistry, vol. 42, No. 13, Nov. 1970, pp. 103A 106A.|
|44||Shura Agadshanyan et al., "Morphoquant--An Automatic Microimage Analyzer of the JENA Optical Works," JENA Review, JR 6, 1977, pp. 270-276.|
|45||*||Shura Agadshanyan et al., Morphoquant An Automatic Microimage Analyzer of the JENA Optical Works, JENA Review, JR 6, 1977, pp. 270 276.|
|46||T. Wilson et al., "Dynamic Focusing in the Confocal Scanning Microscope," Journal of Microscopy, vol. 128, Pt. 2, Nov. 1982, pp. 139-143.|
|47||*||T. Wilson et al., Dynamic Focusing in the Confocal Scanning Microscope, Journal of Microscopy, vol. 128, Pt. 2, Nov. 1982, pp. 139 143.|
|48||W. Jerry Alford et al., "Laser Scanning Microscopy," Proceedings of the IEEE, vol. 70, No. 6, Jun. 1982, pp. 641-651.|
|49||*||W. Jerry Alford et al., Laser Scanning Microscopy, Proceedings of the IEEE, vol. 70, No. 6, Jun. 1982, pp. 641 651.|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US5594235 *||Jun 7, 1995||Jan 14, 1997||Ultrapointe Corporation||Automated surface acquisition for a confocal microscope|
|US5638206 *||Sep 29, 1994||Jun 10, 1997||Ushiodenki Kabushiki Kaisha||Confocal optical microscope and length measuring device using this microscope|
|US5736745 *||Apr 4, 1996||Apr 7, 1998||Mitsubishi Denki Kabushiki Kaisha||Contamination evaluating apparatus|
|US5747794 *||Oct 16, 1996||May 5, 1998||Steris Corporation||Scanning device for evaluating cleanliness and integrity of medical and dental instruments|
|US5764363 *||Jun 28, 1996||Jun 9, 1998||Nikon Corporation||Apparatus for observing a surface using polarized light|
|US5774222 *||Oct 6, 1995||Jun 30, 1998||Hitachi, Ltd.||Manufacturing method of semiconductor substrative and method and apparatus for inspecting defects of patterns on an object to be inspected|
|US5798830 *||Nov 27, 1996||Aug 25, 1998||Ultrapointe Corporation||Method of establishing thresholds for image comparison|
|US5847821 *||Jul 10, 1997||Dec 8, 1998||Advanced Micro Devices, Inc.||Use of fiducial marks for improved blank wafer defect review|
|US5870187 *||Aug 8, 1997||Feb 9, 1999||Applied Materials, Inc.||Method for aligning semiconductor wafer surface scans and identifying added and removed particles resulting from wafer handling or processing|
|US5909276 *||Mar 30, 1998||Jun 1, 1999||Microtherm, Llc||Optical inspection module and method for detecting particles and defects on substrates in integrated process tools|
|US5912735 *||Jul 29, 1997||Jun 15, 1999||Kla-Tencor Corporation||Laser/white light viewing laser imaging system|
|US5923432 *||Dec 18, 1997||Jul 13, 1999||Steris Corporation||Cleaning efficacy real time indicator|
|US5982920 *||Jan 8, 1997||Nov 9, 1999||Lockheed Martin Energy Research Corp. Oak Ridge National Laboratory||Automated defect spatial signature analysis for semiconductor manufacturing process|
|US5985085 *||Dec 4, 1997||Nov 16, 1999||Arcturus Engineering, Inc.||Method of manufacturing consumable for laser capture microdissection|
|US5998887 *||Jun 17, 1998||Dec 7, 1999||Lucent Technologies, Inc.||Battery test circuit for optical network and method of operation thereof|
|US6016562 *||Aug 28, 1997||Jan 18, 2000||Mitsubishi Denki Kabushiki Kaisha||Inspection data analyzing apparatus for in-line inspection with enhanced display of inspection results|
|US6034776 *||Apr 10, 1998||Mar 7, 2000||The United States Of America As Represented By The Secretary Of Commerce||Microroughness-blind optical scattering instrument|
|US6051845 *||Mar 25, 1998||Apr 18, 2000||Applied Materials, Inc.||Method and apparatus for selectively marking a semiconductor wafer|
|US6062084 *||Jan 29, 1999||May 16, 2000||Taiwan Semiconductor Manufacturing Co., Ltd.||Apparatus for detecting wafer edge defects and method of using|
|US6069690 *||Nov 13, 1998||May 30, 2000||Uniphase Corporation||Integrated laser imaging and spectral analysis system|
|US6081325 *||Jun 3, 1997||Jun 27, 2000||Kla-Tencor Corporation||Optical scanning system for surface inspection|
|US6098031 *||Mar 5, 1998||Aug 1, 2000||Gsi Lumonics, Inc.||Versatile method and system for high speed, 3D imaging of microscopic targets|
|US6122562 *||May 5, 1997||Sep 19, 2000||Applied Materials, Inc.||Method and apparatus for selectively marking a semiconductor wafer|
|US6146014 *||Nov 4, 1998||Nov 14, 2000||Advanced Micro Devices, Inc.||Method for laser scanning flip-chip integrated circuits|
|US6148114||Nov 27, 1996||Nov 14, 2000||Ultrapointe Corporation||Ring dilation and erosion techniques for digital image processing|
|US6160908 *||Nov 21, 1997||Dec 12, 2000||Nikon Corporation||Confocal microscope and method of generating three-dimensional image using confocal microscope|
|US6177287 *||Sep 28, 1998||Jan 23, 2001||Advanced Micro Devices, Inc.||Simplified inter database communication system|
|US6177998||Oct 20, 1999||Jan 23, 2001||General Scanning, Inc.||Method and system for high speed measuring of microscopic targets|
|US6181425||Oct 18, 1999||Jan 30, 2001||General Scanning, Inc.||Method and system for high speed measuring of microscopic targets|
|US6184973||Apr 10, 1998||Feb 6, 2001||Arcturus Engineering, Inc.||Laser capture microdissection pressure plate and transfer arm|
|US6215550||Jul 23, 1998||Apr 10, 2001||Arcturus Engineering, Inc.||Laser capture microdissection optical system|
|US6249347||Oct 19, 1999||Jun 19, 2001||General Scanning, Inc.||Method and system for high speed measuring of microscopic targets|
|US6272393 *||Sep 28, 1998||Aug 7, 2001||Advanced Micro Devices, Inc.||Efficient tool utilization using previous scan data|
|US6288782||May 5, 1999||Sep 11, 2001||Ultrapointe Corporation||Method for characterizing defects on semiconductor wafers|
|US6341259||Jun 4, 1999||Jan 22, 2002||Interscience, Inc.||Microsystems integrated testing and characterization system and method|
|US6366357||Mar 5, 1998||Apr 2, 2002||General Scanning, Inc.||Method and system for high speed measuring of microscopic targets|
|US6375347 *||Sep 5, 2000||Apr 23, 2002||Advanced Micro Devices, Inc.||Method for laser scanning flip-chip integrated circuits|
|US6381017||Oct 1, 2001||Apr 30, 2002||Lj Laboratories, L.L.C.||Apparatus and method for measuring optical characteristics of an object|
|US6404498 *||Jun 6, 2000||Jun 11, 2002||Hitachi, Ltd.||Manufacturing method of semiconductor substrate and method and apparatus for inspecting defects of patterns on an object to be inspected|
|US6407373 *||Jun 15, 1999||Jun 18, 2002||Applied Materials, Inc.||Apparatus and method for reviewing defects on an object|
|US6438438 *||Jan 2, 1998||Aug 20, 2002||Hitachi, Ltd.||Method and system for manufacturing semiconductor devices, and method and system for inspecting semiconductor devices|
|US6449041 *||Nov 23, 1998||Sep 10, 2002||Lj Laboratories, Llc||Apparatus and method for measuring optical characteristics of an object|
|US6452686||Apr 2, 2002||Sep 17, 2002||General Scanning, Inc.||Method and system for high speed measuring of microscopic targets|
|US6466040 *||Aug 5, 1998||Oct 15, 2002||Carl Zeiss Jena Gmbh||Three dimensional optical beam induced current (3-D-OBIC)|
|US6469779||Feb 4, 1998||Oct 22, 2002||Arcturus Engineering, Inc.||Laser capture microdissection method and apparatus|
|US6477265||Dec 7, 1998||Nov 5, 2002||Taiwan Semiconductor Manufacturing Company||System to position defect location on production wafers|
|US6486072||Nov 10, 2000||Nov 26, 2002||Advanced Micro Devices, Inc.||System and method to facilitate removal of defects from a substrate|
|US6495195||Feb 14, 1997||Dec 17, 2002||Arcturus Engineering, Inc.||Broadband absorbing film for laser capture microdissection|
|US6510237||Oct 15, 1999||Jan 21, 2003||Commissariat a l′Energie Atomique||System for determining the concentration of a substance mixed with a fluorophor, its method of implementation|
|US6512576||Jul 17, 2000||Jan 28, 2003||Arcturus Engineering, Inc.||Laser capture microdissection optical system|
|US6528248||May 1, 2000||Mar 4, 2003||Arcturus Engineering, Inc.||Processing technology for LCM samples|
|US6538726||Jun 3, 2002||Mar 25, 2003||Lj Laboratories, Llc||Apparatus and method for measuring optical characteristics of an object|
|US6538729 *||Dec 22, 2000||Mar 25, 2003||Ccs Co., Ltd.||Unit for inspecting a surface|
|US6546308||Mar 21, 2001||Apr 8, 2003||Hitachi, Ltd,||Method and system for manufacturing semiconductor devices, and method and system for inspecting semiconductor devices|
|US6548796||Jun 23, 1999||Apr 15, 2003||Regents Of The University Of Minnesota||Confocal macroscope|
|US6556290 *||Mar 5, 2001||Apr 29, 2003||Hitachi, Ltd.||Defect inspection method and apparatus therefor|
|US6563098 *||Jul 6, 2001||May 13, 2003||Korea Advanced Institute Of Technology||High-precision displacement measurement device and method using unit displacement sensor based on confocal theory|
|US6563586 *||Jul 10, 2000||May 13, 2003||Therma-Wave, Inc.||Wafer metrology apparatus and method|
|US6570654||Apr 25, 2002||May 27, 2003||Lj Laboratories Llc||Apparatus and method for measuring optical characteristics of an object|
|US6583866||May 30, 2002||Jun 24, 2003||Lj Laboratories Llc||Spectrometric apparatus and method for measuring optical characteristics of an object|
|US6590660||Mar 21, 2002||Jul 8, 2003||Lj Laboratories Llc||Apparatus and method for measuring optical characteristics of an object|
|US6597000||Jul 8, 2002||Jul 22, 2003||Affymetrix, Inc.||Systems and methods for detection of labeled materials|
|US6630995||Oct 6, 2000||Oct 7, 2003||Applied Materials, Inc.||Method and apparatus for embedded substrate and system status monitoring|
|US6630996||Nov 14, 2001||Oct 7, 2003||Real Time Metrology, Inc.||Optical method and apparatus for inspecting large area planar objects|
|US6639657||Jul 23, 1998||Oct 28, 2003||Arcturus Engineering, Inc.||Laser capture microdissection translation stage joystick|
|US6648730||Oct 30, 2000||Nov 18, 2003||Applied Materials, Inc.||Calibration tool|
|US6654488||Jul 1, 1999||Nov 25, 2003||International Business Machines Corporation||Fill pattern inspection|
|US6661515||Sep 11, 2001||Dec 9, 2003||Kla-Tencor Corporation||Method for characterizing defects on semiconductor wafers|
|US6671041||Jan 24, 2001||Dec 30, 2003||Olympus Optical Co., Ltd.||Apparatus for inspecting a substrate|
|US6671398 *||Sep 28, 2001||Dec 30, 2003||Applied Materials, Inc.||Method and apparatus for inspection of patterned semiconductor wafers|
|US6690469 *||Sep 14, 1999||Feb 10, 2004||Hitachi, Ltd.||Method and apparatus for observing and inspecting defects|
|US6690470||Nov 6, 2000||Feb 10, 2004||Arcturus Engineering, Inc.||Automated laser capture microdissection|
|US6693708||Oct 6, 2000||Feb 17, 2004||Applied Materials, Inc.||Method and apparatus for substrate surface inspection using spectral profiling techniques|
|US6697149||Jul 23, 1998||Feb 24, 2004||Arcturus Engineering, Inc.||Laser capture microdissection vacuum hold-down|
|US6697517||Apr 10, 2000||Feb 24, 2004||Applied Magerials, Inc.||Particle detection and embedded vision system to enhance substrate yield and throughput|
|US6700653 *||Oct 17, 2002||Mar 2, 2004||Arcturus Engineering, Inc.||Laser capture microdissection optical system|
|US6707544||Sep 7, 1999||Mar 16, 2004||Applied Materials, Inc.||Particle detection and embedded vision system to enhance substrate yield and throughput|
|US6707545||Oct 6, 2000||Mar 16, 2004||Applied Materials, Inc.||Optical signal routing method and apparatus providing multiple inspection collection points on semiconductor manufacturing systems|
|US6707546 *||Oct 25, 2001||Mar 16, 2004||Olympus Optical Co., Ltd.||Apparatus for inspecting a substrate|
|US6708132||Jun 2, 2000||Mar 16, 2004||Interscience, Inc.||Microsystems integrated testing and characterization system and method|
|US6721045||Oct 6, 2000||Apr 13, 2004||Applied Materials, Inc.||Method and apparatus to provide embedded substrate process monitoring through consolidation of multiple process inspection techniques|
|US6750974||Sep 16, 2002||Jun 15, 2004||Gsi Lumonics Corporation||Method and system for 3D imaging of target regions|
|US6762831 *||Oct 25, 2002||Jul 13, 2004||Hitachi, Ltd.||Method and apparatus for inspecting defects|
|US6809809||Mar 4, 2003||Oct 26, 2004||Real Time Metrology, Inc.||Optical method and apparatus for inspecting large area planar objects|
|US6813032||Oct 6, 2000||Nov 2, 2004||Applied Materials, Inc.||Method and apparatus for enhanced embedded substrate inspection through process data collection and substrate imaging techniques|
|US6819416||Nov 18, 2002||Nov 16, 2004||Hitachi, Ltd.||Defect inspection method and apparatus therefor|
|US6831994 *||Jul 17, 2001||Dec 14, 2004||Lynx Therapeutics, Inc.||System and apparatus for sequential processing of analytes|
|US6865948 *||Jan 29, 2002||Mar 15, 2005||Taiwan Semiconductor Manufacturing Company||Method of wafer edge damage inspection|
|US6867406||Mar 23, 2000||Mar 15, 2005||Kla-Tencor Corporation||Confocal wafer inspection method and apparatus using fly lens arrangement|
|US6870612||Jan 17, 2003||Mar 22, 2005||Spectracode, Inc.||Portable spectral imaging microscope system|
|US6870616||Aug 8, 2002||Mar 22, 2005||Jjl Technologies Llc||Spectrometer apparatus for determining an optical characteristic of an object or material having one or more sensors for determining a physical position or non-color property|
|US6870625||Dec 12, 2003||Mar 22, 2005||Arcturus Bioscience, Inc.||Automated laser capture microdissection|
|US6876445 *||Apr 10, 2002||Apr 5, 2005||Hitachi, Ltd.||Method for analyzing defect data and inspection apparatus and review system|
|US6882416||Oct 6, 2000||Apr 19, 2005||Applied Materials, Inc.||Methods for continuous embedded process monitoring and optical inspection of substrates using specular signature analysis|
|US6887703||Feb 16, 2001||May 3, 2005||Arturus Bioscience, Inc.||Transfer film for laser microcapture|
|US6888627||Apr 10, 2003||May 3, 2005||Kla-Tencor Corporation||Optical scanning system for surface inspection|
|US6888634||Nov 22, 2002||May 3, 2005||Jjl Technologies Llc||Apparatus and method for measuring optical characteristics of an object|
|US6900132 *||Oct 22, 2003||May 31, 2005||Semitool, Inc.||Single workpiece processing system|
|US6915955||Jan 4, 2002||Jul 12, 2005||Jjl Technologies Llc||Apparatus for determining multi-bit data via light received by a light receiver and coupled to spectral sensors that measure light in spectral bands|
|US6919958||Mar 26, 2003||Jul 19, 2005||Therma-Wave, Inc.||Wafer metrology apparatus and method|
|US6924889||Nov 25, 2003||Aug 2, 2005||Arcturus Bioscience, Inc.||Laser capture microdissection vacuum hold-down|
|US6937754 *||Jun 7, 2000||Aug 30, 2005||Sony Corporation||Inspection equipment|
|US6950189||Apr 4, 2003||Sep 27, 2005||Jjl Technologies Llc||Apparatus and method for measuring optical characteristics of an object|
|US7012676||Aug 5, 2003||Mar 14, 2006||Arcturus Bioscience, Inc.||Laser capture microdissection translation stage joystick|
|US7012684||Oct 6, 2000||Mar 14, 2006||Applied Materials, Inc.||Method and apparatus to provide for automated process verification and hierarchical substrate examination|
|US7027133||Nov 15, 2004||Apr 11, 2006||Arcturus Bioscience, Inc.||Automated laser capture microdissection|
|US7061600||Mar 18, 2002||Jun 13, 2006||Renesas Technology Corp.||Manufacturing method of semiconductor substrate and method and apparatus for inspecting defects of patterns on an object to be inspected|
|US7075637||Apr 10, 2003||Jul 11, 2006||Kla-Tencor Corporation||Optical scanning system for surface inspection|
|US7084967||Sep 22, 2004||Aug 1, 2006||KLA —Tencor Corporation||Scanning system for inspecting anomalies on surfaces|
|US7084968||Apr 1, 2005||Aug 1, 2006||Hitachi, Ltd.||Method for analyzing defect data and inspection apparatus and review system|
|US7085622||Apr 19, 2002||Aug 1, 2006||Applied Material, Inc.||Vision system|
|US7088852 *||Apr 11, 2001||Aug 8, 2006||Advanced Micro Devices, Inc.||Three-dimensional tomography|
|US7092095||Jan 20, 2004||Aug 15, 2006||Hitachi, Ltd.||Method and apparatus for observing and inspecting defects|
|US7095032||Jun 3, 2005||Aug 22, 2006||Montagu Jean I||Focusing of microscopes and reading of microarrays|
|US7095763||Dec 16, 2002||Aug 22, 2006||Cyberoptics Semiconductor, Inc.||Semiconductor wafer carrier mapping sensor|
|US7095885||Mar 1, 2000||Aug 22, 2006||Micron Technology, Inc.||Method for measuring registration of overlapping material layers of an integrated circuit|
|US7097450||Apr 4, 2003||Aug 29, 2006||Jjl Technologies Llc||Methods for determining color or shade information of a dental object using an image generation device without operator identification of the position of a reference implement in the field of view of the image generation device|
|US7109458||Mar 14, 2005||Sep 19, 2006||Kla-Tencor Corporation||Confocal wafer depth scanning inspection method|
|US7110096||Sep 26, 2005||Sep 19, 2006||Jjl Technologies Llc||Method for determing optical characteristics through a protective barrier|
|US7113283||Nov 22, 2002||Sep 26, 2006||Jjl Technologies Llc||Apparatus and method for measuring color|
|US7142294 *||Dec 19, 2001||Nov 28, 2006||Hitachi, Ltd.||Method and apparatus for detecting defects|
|US7148966||Jan 13, 2006||Dec 12, 2006||Arcturus Bioscience, Inc.||Automated laser capture microdissection|
|US7161671||Jul 7, 2004||Jan 9, 2007||Hitachi, Ltd.||Method and apparatus for inspecting defects|
|US7165973 *||Sep 21, 2001||Jan 23, 2007||Cantor Michael B||Method for non-verbal assessment of human competence|
|US7180584||Oct 17, 2003||Feb 20, 2007||Renesas Technology Corp.||Manufacturing method of semiconductor substrate and method and apparatus for inspecting defects of patterns of an object to be inspected|
|US7199882||Apr 8, 2005||Apr 3, 2007||Gsi Group Corporation||Method and system for high speed measuring of microscopic targets|
|US7205549 *||Jan 29, 2004||Apr 17, 2007||Hitachi High-Technologies Corporation||Pattern defect inspection method and its apparatus|
|US7233841||Mar 11, 2003||Jun 19, 2007||Applied Materials, Inc.||Vision system|
|US7235800 *||May 31, 2000||Jun 26, 2007||Advanced Micro Devices, Inc.||Electrical probing of SOI circuits|
|US7240839||Jul 11, 2005||Jul 10, 2007||Jjl Technologies Llc||Color measurement apparatus operable as a pointing device, a computer display measurement device and a printer output measurement device|
|US7251024 *||Oct 25, 2004||Jul 31, 2007||Hitachi, Ltd.||Defect inspection method and apparatus therefor|
|US7298483||Feb 21, 2003||Nov 20, 2007||Vita Zahnfabrik H. Rauter Gmbh & Co. Kg||Miniaturized system and method for measuring optical characteristics|
|US7299147||Jan 3, 2007||Nov 20, 2007||Hitachi, Ltd.||Systems for managing production information|
|US7308329 *||Dec 22, 2005||Dec 11, 2007||Olympus Corporation||Method and apparatus for inspecting semiconductor wafer|
|US7312919 *||Dec 27, 2001||Dec 25, 2007||Affymetrix, Inc.||Wide field of view and high speed scanning microscopy|
|US7383156||Sep 5, 2001||Jun 3, 2008||Sumco Techxiv Kabushiki Kaisha||Apparatus for inspecting wafer surface, method for inspecting wafer surface, apparatus for judging defective wafer, method for judging defective wafer, and apparatus for processing information on wafer surface|
|US7399950||Sep 15, 2006||Jul 15, 2008||Kla-Tencor Corporation||Confocal wafer inspection method and apparatus using fly lens arrangement|
|US7440092||Nov 21, 2006||Oct 21, 2008||Hitachi, Ltd.||Method and apparatus for detecting defects|
|US7460220||Nov 29, 2006||Dec 2, 2008||Renesas Technology Corporation||Manufacturing method of semiconductor substrate and method and apparatus for inspecting defects of patterns of an object to be inspected|
|US7473401||Jul 20, 1999||Jan 6, 2009||Mds Analytical Technologies (Us) Inc.||Fluidic extraction of microdissected samples|
|US7477364||Oct 2, 2006||Jan 13, 2009||Vita Zahnfabrik H. Rauter Gmbh & Co. Kg||Miniaturized system and method for measuring optical characteristics|
|US7477372||Apr 23, 2007||Jan 13, 2009||Kla-Tencor Technologies Corporation||Optical scanning system for surface inspection|
|US7499162 *||Jun 26, 2006||Mar 3, 2009||Hitachi, Ltd.||Method and apparatus for observing and inspecting defects|
|US7528956||Sep 27, 2007||May 5, 2009||Vita Zahnfabrik H. Rauter Gmbh & Co. Kg||Miniaturized system and method for measuring optical characteristics|
|US7535560||Feb 26, 2007||May 19, 2009||Aceris 3D Inspection Inc.||Method and system for the inspection of integrated circuit devices having leads|
|US7551272||Nov 9, 2005||Jun 23, 2009||Aceris 3D Inspection Inc.||Method and an apparatus for simultaneous 2D and 3D optical inspection and acquisition of optical inspection data of an object|
|US7627395||Dec 28, 2006||Dec 1, 2009||Applied Materials, Inc.||Vision system|
|US7682150||Aug 25, 2006||Mar 23, 2010||Jjl Technologies Llc||Method for preparing a dental prosthesis based on electronically determined image and color/shade data and based on telephone communication|
|US7768644||Apr 1, 2009||Aug 3, 2010||Vita Zahnfabrik H. Rauter Gmbh & Co. Kg||Miniaturized system and method for measuring optical characteristics|
|US7785103||Apr 20, 2008||Aug 31, 2010||Jjl Technologies Llc||Apparatus and method for measuring optical characteristics of teeth|
|US7858911||Jul 11, 2008||Dec 28, 2010||Kla-Tencor Corporation||Confocal wafer inspection system and method|
|US7907281||Jul 26, 2010||Mar 15, 2011||Vita Zahnfabrik H. Rauter Gmbh & Co. Kg||System and method for calibrating optical characteristics|
|US7969465||Dec 19, 2006||Jun 28, 2011||Applied Materials, Inc.||Method and apparatus for substrate imaging|
|US7978317||Dec 23, 2008||Jul 12, 2011||Vita Zahnfabrik H. Rauter Gmbh & Co. Kg||Miniaturized system and method for measuring optical characteristics|
|US8027038||Feb 9, 2011||Sep 27, 2011||Vita Zahnfabrik H. Rauter Gmbh & Co. Kg||System and method for calibrating optical characteristics|
|US8027527||Jun 22, 2006||Sep 27, 2011||Hitachi, Ltd.||Method for analyzing defect data and inspection apparatus and review system|
|US8086422||Dec 22, 2008||Dec 27, 2011||Hitachi, Ltd.||Method for analyzing defect data and inspection apparatus and review system|
|US8131057 *||May 16, 2007||Mar 6, 2012||Tokyo Electron Limited||Defect distribution pattern comparison method and system|
|US8159666||Jul 14, 2008||Apr 17, 2012||Jjl Technologies Llc||Apparatus and method for measuring color|
|US8164743||Jun 6, 2011||Apr 24, 2012||Vita Zahnfabrik H. Rauter Gmbh & Co. Kg||Miniaturized system and method for measuring optical characteristics|
|US8300222||Aug 22, 2011||Oct 30, 2012||Vita Zahnfabrik H. Rauter Gmbh & Co. Kg||System and method for calibrating optical characteristics|
|US8311788||Jul 1, 2009||Nov 13, 2012||Schlumberger Technology Corporation||Method to quantify discrete pore shapes, volumes, and surface areas using confocal profilometry|
|US8319971 *||Aug 6, 2008||Nov 27, 2012||Industrial Technology Research Institute||Scatterfield microscopical measuring method and apparatus|
|US8351026||Apr 21, 2006||Jan 8, 2013||Affymetrix, Inc.||Methods and devices for reading microarrays|
|US8361713||Oct 12, 2007||Jan 29, 2013||Illumina, Inc.||System and apparatus for sequential processing of analytes|
|US8362446 *||Sep 30, 1999||Jan 29, 2013||2C A/S||Apparatus for determining the position of an object|
|US8373857||Mar 21, 2012||Feb 12, 2013||Vita Zahnfabrik H. Rauter Gmbh & Co. Kg||Miniaturized system and method for measuring optical characteristics|
|US8410460||Apr 17, 2007||Apr 2, 2013||Hitachi High-Technologies Corporation||Pattern defect inspection method and its apparatus|
|US8472012||Aug 28, 2012||Jun 25, 2013||Jjl Technologies Llc||Apparatus having a first optical sensor making a first measurement to detect position and a second optical sensor making a second measurement|
|US8497985 *||Oct 22, 2008||Jul 30, 2013||Shibaura Mechatronics Corporation||Inspection method based on captured image and inspection device|
|US8553214 *||Sep 7, 2010||Oct 8, 2013||Hitachi, Ltd.||Method and equipment for detecting pattern defect|
|US8715955||Sep 8, 2005||May 6, 2014||Life Technologies Corporation||Laser microdissection apparatus and method|
|US8722357||Sep 26, 2005||May 13, 2014||Life Technologies Corporation||Automated microdissection instrument|
|US8725477||Apr 8, 2009||May 13, 2014||Schlumberger Technology Corporation||Method to generate numerical pseudocores using borehole images, digital rock samples, and multi-point statistics|
|US8786844||Sep 5, 2012||Jul 22, 2014||511 Innovations, Inc.||Apparatus for measuring optical characteristics including position detection|
|US8792097||May 22, 2009||Jul 29, 2014||511 Innovations, Inc.||Systems for applying pigment to a substrate with a spectrophotometer integral to the system|
|US8817243||Apr 16, 2012||Aug 26, 2014||511 Innovations, Inc.||Apparatus and method for measuring color|
|US8934095||Jan 8, 2013||Jan 13, 2015||Vita Zahnfabrik H. Rauter Gmbh & Co. Kg||Miniaturized system and method for measuring optical characteristics|
|US8948520 *||Mar 25, 2014||Feb 3, 2015||Ebay Inc.||Image categorization based on comparisons between images|
|US8998613||Sep 12, 2012||Apr 7, 2015||511 Innovations Inc.||Apparatus and method for measuring optical characteristics using a camera and a calibration chart imaged with the camera|
|US9019598 *||Aug 8, 2012||Apr 28, 2015||Nikon Corporation||Light stimulus apparatus and observing apparatus with light controlling unit|
|US9075106 *||Jul 30, 2009||Jul 7, 2015||International Business Machines Corporation||Detecting chip alterations with light emission|
|US9132554 *||Feb 27, 2014||Sep 15, 2015||Kabushiki Kaisha Yaskawa Denki||Robot system and method for producing to-be-processed material|
|US9207156 *||Apr 23, 2012||Dec 8, 2015||Mitutoyo Corporation||Hardness tester|
|US9273354||Apr 4, 2014||Mar 1, 2016||Illumina, Inc.||System and apparatus for sequential processing of analytes|
|US9581723||Apr 10, 2009||Feb 28, 2017||Schlumberger Technology Corporation||Method for characterizing a geological formation traversed by a borehole|
|US20020089664 *||Dec 19, 2001||Jul 11, 2002||Yukihiro Shibata||Method and apparatus for detecting defects|
|US20020090122 *||Nov 5, 2001||Jul 11, 2002||Baer Thomas M.||Road map image guide for automated microdissection|
|US20020097393 *||Sep 11, 2001||Jul 25, 2002||Mehrdad Nikoonahad||Scanning system for inspecting anamolies on surfaces|
|US20020154303 *||Mar 18, 2002||Oct 24, 2002||Shunji Maeda||Manufacturing method of semiconductor substrate and method and apparatus for inspecting defects of patterns on an object to be inspected|
|US20020181756 *||Apr 10, 2002||Dec 5, 2002||Hisae Shibuya||Method for analyzing defect data and inspection apparatus and review system|
|US20030057379 *||Jun 13, 2002||Mar 27, 2003||Montagu Jean I.||Focusing of microscopes and reading of microarrays|
|US20030081201 *||Oct 25, 2002||May 1, 2003||Yukihiro Shibata||Method and apparatus for inspecting defects|
|US20030095251 *||Nov 18, 2002||May 22, 2003||Shunji Maeda||Defect inspection method and apparatus therefor|
|US20030095252 *||Nov 20, 2002||May 22, 2003||Leica Microsystems Semiconductor Gmbh||Method and apparatus for defect analysis of wafers|
|US20030141465 *||Dec 16, 2002||Jul 31, 2003||Schuda Felix J.||Semiconductor wafer carrier mapping sensor|
|US20030142302 *||Jan 17, 2003||Jul 31, 2003||Yanan Jiang||Portable spectral imaging microscope system|
|US20030151742 *||Feb 19, 2003||Aug 14, 2003||Regents Of The University Of Minnesota||Confocal macroscope|
|US20030184742 *||Mar 26, 2003||Oct 2, 2003||Stanke Fred E.||Wafer metrology apparatus and method|
|US20030198376 *||Apr 19, 2002||Oct 23, 2003||Iraj Sadighi||Vision system|
|US20030202092 *||Mar 11, 2003||Oct 30, 2003||Applied Materials, Inc.||Vision system|
|US20030206294 *||Apr 10, 2003||Nov 6, 2003||Leslie Brian C.||Optical scanning system for surface inspection|
|US20030227619 *||Apr 10, 2003||Dec 11, 2003||Leslie Brian C.||Optical scanning system for surface inspection|
|US20040002046 *||Sep 21, 2001||Jan 1, 2004||Cantor Michael B.||Method for non- verbal assement of human competence|
|US20040012775 *||Mar 4, 2003||Jan 22, 2004||Kinney Patrick D.||Optical method and apparatus for inspecting large area planar objects|
|US20040027556 *||Aug 5, 2003||Feb 12, 2004||Baer Thomas M.||Laser capture microdissection translation stage joystick|
|US20040036863 *||Sep 5, 2001||Feb 26, 2004||Kouzou Matsusita||Apparatus for inspecting wafer surface, method for inspecting wafer surface, apparatus for judging defective wafer, method for judging defective wafer, and apparatus for processing information on wafer surface|
|US20040057044 *||Sep 19, 2003||Mar 25, 2004||Mehrdad Nikoonahad||Scanning system for inspecting anamolies on surfaces|
|US20040075837 *||Oct 17, 2003||Apr 22, 2004||Shunji Maeda||Manufacturing method of semiconductor substrate and method and apparatus for inspecting defects of patterns of an object to be inspected|
|US20040095638 *||Mar 15, 2002||May 20, 2004||Thomas Engel||Method for evaluating layers of images|
|US20040106206 *||Nov 25, 2003||Jun 3, 2004||Baer Thomas M.||Laser capture microdissection vacuum hold-down|
|US20040112738 *||Oct 22, 2003||Jun 17, 2004||Thompson Raymon F.||Single workpiece processing system|
|US20040150821 *||Jan 20, 2004||Aug 5, 2004||Hitachi, Ltd||Method and apparatus for observing and inspecting defects|
|US20040179207 *||Mar 24, 2004||Sep 16, 2004||Gsi Lumonics Corporation||Method and system for high speed measuring of microscopic targets|
|US20040197850 *||Apr 19, 2004||Oct 7, 2004||Baer Thomas M.||Transfer film for laser microcapture|
|US20040253431 *||May 24, 2002||Dec 16, 2004||Lothar Holz||Supporting substrate used for the deposition, automated recognition and spectroscopic identification of particles|
|US20040257560 *||Jul 7, 2004||Dec 23, 2004||Yukihiro Shibata||Method and apparatus for inspecting defects|
|US20040262529 *||Jan 29, 2004||Dec 30, 2004||Minoru Yoshida||Pattern defect inspection method and its apparatus|
|US20050036137 *||Sep 22, 2004||Feb 17, 2005||Mehrdad Nikoonahad||Scanning system for inspecting anamolies on surfaces|
|US20050083519 *||Oct 25, 2004||Apr 21, 2005||Shunji Maeda||Defect inspection method and apparatus therefor|
|US20050086024 *||Sep 15, 2004||Apr 21, 2005||Cyberoptics Semiconductor Inc.||Semiconductor wafer location sensing via non contact methods|
|US20050110986 *||Dec 21, 2004||May 26, 2005||Mehrdad Nikoonahad||Scanning system for inspecting anamolies on surfaces|
|US20050156098 *||Mar 14, 2005||Jul 21, 2005||Fairley Christopher R.||Confocal wafer inspection method and apparatus|
|US20050174580 *||Apr 8, 2005||Aug 11, 2005||Gsi Lumonics Corporation||Method and system for high speed measuring of microscopic targets|
|US20050285049 *||Jun 3, 2005||Dec 29, 2005||Montagu Jean I||Focusing of microscopes and reading of microarrays|
|US20060078190 *||Aug 4, 2005||Apr 13, 2006||Yukihiro Shibata||Method and apparatus for inspecting defects|
|US20060161284 *||Dec 22, 2005||Jul 20, 2006||Olympus Corporation||Method and apparatus for inspecting semiconductor wafer|
|US20060238755 *||Jun 22, 2006||Oct 26, 2006||Hisae Shibuya||Method for analyzing defect data and inspection apparatus and review system|
|US20060238760 *||Jun 26, 2006||Oct 26, 2006||Hitachi, Ltd.||Method and apparatus for observing and inspecting defects|
|US20060239536 *||Jun 22, 2006||Oct 26, 2006||Hisae Shibuya||Method for analyzing defect data and inspection apparatus and review system|
|US20060274935 *||Aug 15, 2006||Dec 7, 2006||Delarosa Eugene A||Method for measuring registration of overlapping material layers of an integrated circuit|
|US20070007429 *||Sep 15, 2006||Jan 11, 2007||Kla-Tencor Corporation||Confocal wafer inspection method and apparatus using fly lens arrangement|
|US20070019859 *||Jun 5, 2006||Jan 25, 2007||Delarosa Eugene A||Method for measuring registration|
|US20070064225 *||Nov 21, 2006||Mar 22, 2007||Yukihiro Shibata||Method and apparatus for detecting defects|
|US20070070336 *||Nov 29, 2006||Mar 29, 2007||Shunji Maeda|
|US20070085905 *||Dec 19, 2006||Apr 19, 2007||Batson Don T||Method and apparatus for substrate imaging|
|US20070103675 *||Nov 9, 2005||May 10, 2007||Bojko Vodanovic||Method and an apparatus for simultaneous 2D and 3D optical inspection and acquisition of optical inspection data of an object|
|US20070109534 *||Jan 3, 2007||May 17, 2007||Yukihiro Shibata||Systems for managing production information|
|US20070112465 *||Dec 28, 2006||May 17, 2007||Iraj Sadighi||Vision system|
|US20070188744 *||Apr 23, 2007||Aug 16, 2007||Kla-Tencor Technologies Corporation||Optical Scanning System For Surface Inspection|
|US20070195316 *||Apr 17, 2007||Aug 23, 2007||Minoru Yoshida||Pattern defect inspection method and its apparatus|
|US20070223804 *||Apr 20, 2007||Sep 27, 2007||Orbotech Ltd||CAM reference for inspection of contour images|
|US20080144006 *||May 13, 2005||Jun 19, 2008||Schott Ag||Method for Measuring Topographic Structures on Devices|
|US20080204732 *||Feb 26, 2007||Aug 28, 2008||Bojko Vodanovic||Method and system for the inspection of integrated circuit devices having leads|
|US20080273196 *||Jul 11, 2008||Nov 6, 2008||Kla-Tencor Corporation||Confocal wafer inspection system and method|
|US20090105990 *||Dec 22, 2008||Apr 23, 2009||Hisae Shibuya||Method for analyzing defect data and inspection apparatus and review system|
|US20090141264 *||Feb 2, 2009||Jun 4, 2009||Hitachi, Ltd.||Method and Apparatus for Observing and Inspecting Defects|
|US20090161094 *||Apr 3, 2007||Jun 25, 2009||Watkins Cory M||Wafer bevel inspection mechanism|
|US20090236542 *||Jun 1, 2007||Sep 24, 2009||Qinetiq Limited||Optical inspection|
|US20090259446 *||Apr 8, 2009||Oct 15, 2009||Schlumberger Technology Corporation||Method to generate numerical pseudocores using borehole images, digital rock samples, and multi-point statistics|
|US20090316980 *||May 16, 2007||Dec 24, 2009||Tokyo Electron Limited||Method and apparatus for matching defect distribution pattern|
|US20100007881 *||Aug 6, 2008||Jan 14, 2010||Industrial Technology Research Institute||Scatterfield microscopical measuring method and apparatus|
|US20100245810 *||Oct 22, 2008||Sep 30, 2010||Yoshinori Hayashi||Inspection method based on captured image and inspection device|
|US20110001972 *||Sep 7, 2010||Jan 6, 2011||Hiroaki Shishido||Method And Equipment For Detecting Pattern Defect|
|US20110004447 *||Jul 1, 2009||Jan 6, 2011||Schlumberger Technology Corporation||Method to build 3D digital models of porous media using transmitted laser scanning confocal mircoscopy and multi-point statistics|
|US20110026806 *||Jul 30, 2009||Feb 3, 2011||International Business Machines Corporation||Detecting Chip Alterations with Light Emission|
|US20120157350 *||Dec 19, 2011||Jun 21, 2012||Affymetrix, Inc.||Brownian Microbarcodes for Bioassays|
|US20120300295 *||Aug 8, 2012||Nov 29, 2012||Nikon Corporation||Light stimulus apparatus and observing apparatus with light controlling unit|
|US20130047712 *||Apr 23, 2012||Feb 28, 2013||Mitutoyo Corporation||Hardness tester|
|US20130167038 *||Dec 4, 2012||Jun 27, 2013||Satoshi Hirata||File management apparatus, file management method, and computer program product|
|US20140205197 *||Mar 25, 2014||Jul 24, 2014||Ebay Inc.||Image categorization based on comparisons between images|
|US20140277733 *||Feb 27, 2014||Sep 18, 2014||Kabushiki Kaisha Yaskawa Denki||Robot system and method for producing to-be-processed material|
|US20150123014 *||Oct 9, 2014||May 7, 2015||Kla-Tencor Corporation||Determining Information for Defects on Wafers|
|USRE43097||May 18, 2010||Jan 10, 2012||Illumina, Inc.||Massively parallel signature sequencing by ligation of encoded adaptors|
|CN100477142C||Dec 26, 2005||Apr 8, 2009||奥林巴斯株式会社||Method and apparatus for inspecting semiconductor wafer|
|CN100529655C||Apr 9, 2008||Aug 19, 2009||天津大学||Method for measuring corpuscle height on substrate|
|CN101949839A *||Sep 3, 2010||Jan 19, 2011||西安工业大学||Device and method for measuring damage of optical surface subsurface layer|
|CN103091334A *||Jan 29, 2013||May 8, 2013||合肥知常光电科技有限公司||High-resolution detection method and device for optical surface and subsurface absorption defects|
|CN103091334B *||Jan 29, 2013||Jun 24, 2015||合肥知常光电科技有限公司||High-resolution detection method and device for optical surface and subsurface absorption defects|
|DE10127537C1 *||May 31, 2001||Nov 14, 2002||Apsys Advanced Particle System||Carrier substrate used for depositing, automatic recognition and spectroscopic identification of particulate impurities in liquid or gas media consists of a polymeric filter membrane coated with metal|
|DE102004024785A1 *||May 17, 2004||Dec 15, 2005||Schott Ag||Verfahren zur Vermessung topographischer Strukturen auf Bauelementen|
|EP0997729A1 *||Oct 25, 1999||May 3, 2000||Commissariat A L'energie Atomique||Apparatus for determining the concentration of a substance mixed with a fluorophore, and procedure for using the apparatus|
|EP1016126A2 *||Mar 30, 1998||Jul 5, 2000||MicroTherm LLC||Optical inspection module and method for detecting particles and defects on substrates in integrated process tools|
|EP1016126A4 *||Mar 30, 1998||Apr 1, 2009||Microtherm Llc||Optical inspection module and method for detecting particles and defects on substrates in integrated process tools|
|EP1061359A2 *||Jun 8, 2000||Dec 20, 2000||Sony Corporation||Inspection equipment|
|EP1061359A3 *||Jun 8, 2000||Apr 3, 2002||Sony Corporation||Inspection equipment|
|EP1083424A2 *||Sep 7, 2000||Mar 14, 2001||Applied Materials, Inc.||Particle detection and embedded vision system to enhance substrate yield and throughput|
|EP1083424A3 *||Sep 7, 2000||Apr 18, 2001||Applied Materials, Inc.||Particle detection and embedded vision system to enhance substrate yield and throughput|
|EP1235049A2 *||Jan 23, 2002||Aug 28, 2002||Leica Microsystems Heidelberg GmbH||Method and arrangement for imaging and measuring of microscopic three-dimensional structures|
|EP1324022A1 *||Sep 5, 2001||Jul 2, 2003||Komatsu Denshi Kinzoku Kabushiki Kaisha||Apparatus for inspecting wafer surface, method for inspecting wafer surface, apparatus for judging defective wafer, method for judging defective wafer, and apparatus for processing information on wafer surface|
|EP1324022A4 *||Sep 5, 2001||Jun 15, 2005||Komatsu Denshi Kinzoku Kk|
|EP1770451A2||Sep 25, 2006||Apr 4, 2007||Oki Data Corporation||Image forming apparatus|
|EP2932283A4 *||Nov 21, 2013||Aug 24, 2016||Sri Internat Inc||Method and apparatus for conducting automated integrated circuit analysis|
|WO1996041137A1 *||Jun 6, 1996||Dec 19, 1996||Ultrapointe Corporation||Automated surface acquisition for a confocal microscope|
|WO1998035216A1 *||Feb 5, 1998||Aug 13, 1998||Arcturus Engineering, Inc.||Laser capture microdissection method and apparatus|
|WO1998044330A3 *||Mar 30, 1998||Dec 23, 1998||Microtherm Llc|
|WO1999039253A2 *||Jan 28, 1999||Aug 5, 1999||Lockheed Martin Idaho Technologies Company||Optimal segmentation and packaging process|
|WO1999039253A3 *||Jan 28, 1999||Dec 23, 1999||Lockheed Martin Idaho Tech Co||Optimal segmentation and packaging process|
|WO2001048465A2 *||Dec 22, 2000||Jul 5, 2001||Orbotech Ltd.||Cam reference for inspection of multi-color and contour images|
|WO2001048465A3 *||Dec 22, 2000||Feb 21, 2002||Gilat Bernshtein Tally||Cam reference for inspection of multi-color and contour images|
|WO2002075423A1 *||Mar 15, 2002||Sep 26, 2002||Carl Zeiss Microelectronic Systems Gmbh||Method for evaluating layers of images|
|WO2003093795A2 *||May 5, 2003||Nov 13, 2003||Immunivest Corporation||Device and method for analytical cell imaging|
|WO2003093795A3 *||May 5, 2003||Oct 21, 2004||Immunivest Corp||Device and method for analytical cell imaging|
|WO2005114290A1 *||May 13, 2005||Dec 1, 2005||Schott Ag||Method for measuring topographic structures on components|
|WO2007053937A1 *||Nov 7, 2006||May 18, 2007||Aceris 3D Inspection Inc.||A method and an apparatus for simultaneous 2d and 3d optical inspection and acquisition of optical inspection data of an object|
|WO2007120491A2 *||Apr 3, 2007||Oct 25, 2007||Rudolph Technologies, Inc.||Wafer bevel inspection mechanism|
|U.S. Classification||356/237.5, 356/369, 250/559.48, 250/559.42|
|International Classification||G02B21/00, G01R31/311, G01N21/95|
|Cooperative Classification||G01R31/311, G02B21/006, G01N21/9501|
|European Classification||G01R31/311, G02B21/00M4A7F, G01N21/95A|
|Aug 9, 1993||AS||Assignment|
Owner name: ULTRAPOINTE CORPORATION
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:WORSTER, BRUCE W.;CRANE, DALE E.;HANSEN, HANS J.;AND OTHERS;REEL/FRAME:006652/0354;SIGNING DATES FROM 19930730 TO 19930802
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