US5738165A - Substrate holding apparatus - Google Patents

Substrate holding apparatus Download PDF

Info

Publication number
US5738165A
US5738165A US08/462,589 US46258995A US5738165A US 5738165 A US5738165 A US 5738165A US 46258995 A US46258995 A US 46258995A US 5738165 A US5738165 A US 5738165A
Authority
US
United States
Prior art keywords
substrate holding
temperature
substrate
holding unit
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
US08/462,589
Inventor
Yuji Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP10646993A external-priority patent/JP3291832B2/en
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to US08/462,589 priority Critical patent/US5738165A/en
Application granted granted Critical
Publication of US5738165A publication Critical patent/US5738165A/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S269/00Work holders
    • Y10S269/903Work holder for electrical circuit assemblages or wiring systems
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00Chucks or sockets
    • Y10T279/11Vacuum

Definitions

  • the present invention relates to a substrate holding apparatus, and more particularly to a substrate holding apparatus adapted for use in an apparatus for producing integrated circuits, substrates for liquid crystal display panels, thin film magnetic heads or the like.
  • the substrate holding unit is provided therein with a temperature sensor for monitoring the temperature thereof.
  • the substrate holding unit is further provided therein with heating means and cooling means, of which at least either is controlled by a control system, based on the information from said temperature sensor, in such a manner that the substrate holding unit is maintained within a predetermined temperature range.
  • the recent substrate holding apparatus is designed with a reduced contact area with the substrate.
  • the air present between the non-contact portion of the apparatus and the substrate functions as heat-insulating material. For this reason, the heat of the substrate is transmitted only through the contact portions of the substrate holding unit.
  • the substrate holding unit designed with a reduced contact area even if provided therein with a temperature regulating member, is incapable of efficient temperature regulation due to the reduced contact area with the substrate.
  • an object of the present invention is to enable exact and efficient control of the substrate temperature.
  • a substrate holding apparatus comprising:
  • a plate-shaped substrate holding unit provided with a first surface having plural protruding parts to be maintained in contact with a substrate, and a second surface opposed to said first surface;
  • a temperature regulating unit provided in contact with said second surface and adapted to absorb the heat accumulated in said substrate holding unit
  • a temperature control unit for regulating the temperature of said temperature regulating unit.
  • the protruding portions (contact layer) of the substrate holding unit are so limited in height as to realize a very small gap between the substrate and the non-contact areas (other than the protruding portions of the substrate holding unit), so that the heat generated on the substrate can be transmitted not only through the contact layer but also can be efficiently transmitted, by heat convection, to the substrate holding unit.
  • the substrate holding unit is composed of a material of high thermal conductivity and is designed with a reduced thickness, so that the local heat distribution generated in the substrate can be cancelled on substantially real-time basis to attain a uniform temperature over the entire substrate holding unit. Furthermore, the heat uniformly transmitted to the substrate holding unit is transmitted to and absorbed by the temperature regulating unit on which the substrate holding unit is provided. As the temperature regulating unit is composed of a material of high thermal conductivity, it can efficiently absorb the heat generated in said substrate holding unit.
  • said temperature regulating unit is sufficiently larger in volume than said substrate holding unit, the heat is uniformly transmitted to the entire temperature regulating unit, substantially without any temperature increase therein, and is then discharged by temperature-regulating fluid which is precisely temperature controlled.
  • the substrate holding apparatus of the present invention being provided with a thin plate-shaped substrate holding unit having small protruding portions and a temperature regulating unit sufficiently larger in volume than the substrate holding unit, is capable of transmitting the uneven heat distribution, induced by local thermal change on the substrate, through the substrate holding unit and the temperature regulating unit in uniform manner. It is also capable of discharging the heat from the temperature regulating unit substantially without any temperature rise in the substrate holding unit. Furthermore, the separate structure of the substrate holding unit and the temperature regulating unit improves the efficiency of operations such as cleaning. Also, the substrate holding unit and the temperature regulating unit, being mutually fixed by vacuum, are free from the influence of distortion resulting from the difference in thermal expansion coefficients.
  • FIG. 1 is a schematic view of a projection exposure apparatus equipped with a substrate holding unit embodying the present invention
  • FIG. 2 is a cross-sectional view of a substrate holding unit and a temperature regulating unit embodying the present invention.
  • FIG. 3 is a plan view of a substrate holding unit embodying the present invention.
  • FIG. 1 is a schematic view of a projection exposure apparatus equipped with a substrate holding unit embodying the present invention.
  • Exposing light emitted from a light source 1, such as a mercury lamp or an excimer laser, illuminates a mask R with a uniform intensity through a lens system 2 and a mirror 3.
  • the exposing light transmitted by the mask reaches a wafer W through a projection optical system PL, which forms, on said wafer W, an image of the pattern on the mask
  • a temperature regulating unit 8 is placed on a stage 10, and a substrate holding unit 7 holding the wafer W is placed on the temperature regulating unit 8.
  • Said stage 10 is rendered two-dimensionally movable, and the position thereof is measured by an interferometer 12.
  • a control system 13 Based on the position information from said interferometer 12, a control system 13 controls a driving unit M such as a motor. Through such control the stage 10 can be placed at an arbitrary position, and there can be achieved exposures by the step-and-repeat method.
  • a substrate holding control unit 6 which maintains suction holes 20 (cf. FIG. 2) of the substrate holding unit 7 in vacuum state through a vacuum line 6a, whereby the wafer W is supported by suction by the substrate holding unit 7.
  • the substrate holding control unit 6 also causes the substrate holding unit 7 to be supported by suction on the temperature regulating unit 8, through a vacuum line 6b. Said suction holding of the substrate holding unit 7 by the temperature regulating unit 8 through said vacuum line 6b and that of the wafer W by the substrate holding unit 7 through the vacuum line 6a are independently controllable. Consequently it is possible to release the suction holding of the wafer W while the substrate holding unit 7 is supported by suction on the temperature regulating unit 8.
  • the temperature regulating unit 8 is further provided with a circulating path (heat discharge unit) 9 for circulating temperature-controlled fluid (for example water, inert liquid, air, nitrogen etc.), so as to cover the entire substrate holding unit 7.
  • the fluid from a temperature control unit 11 is supplied to the circulating path 9 through a line 11a, and returns to the temperature control unit 11 through a line 11b.
  • the temperature control unit 11 effects precise temperature control so as maintain the fluid at a substantially constant temperature.
  • Said constant temperature of the fluid is determined, for example, by the stage temperature prior to exposure, and is preferably made to coincide with the temperature of the main body of the projection exposure apparatus.
  • the temperature control unit 11 is further provided with a fluid control unit 11A for maintaining the fluid at a substantially constant speed.
  • the fluid temperature may be determined in advance, but it may also be controlled according to the information from a temperature sensor 23, provided for measuring the temperature of the substrate holding unit 7. The details of such temperature control utilizing the temperature sensor will be explained later.
  • FIG. 2 is a cross-sectional view of the temperature regulating unit 8 and the substrate holding unit 7 with the wafer W supported thereon
  • FIG. 3 which is a plan view of the substrate holding unit 7.
  • the substrate holding unit 7 formed as a thin plate is provided with a plurality of protruding portions 22a, 22b, projecting only by a small amount.
  • a vacuum suction hole 20 in each area between the protruding portions (each narrow gap between the protruding portions in FIG. 2), and the wafer W can be fixed by suction to the substrate holding unit 7, as explained before, by sucking air from said vacuum suction holes 20.
  • the surface areas of the substrate holding unit 7 surrounded by plural protruding portions, particularly the wide areas 21a, 21b between the protruding portions, constitute a non-contact portion, which defines a space SP in cooperation with the wafer W.
  • the volume of said space SP is determined by the height of the protruding portions 22 and the area of the non-contact portion 21. If said volume is large, the air in said space SP functions as a heat insulating material. In consideration of the possible contamination by dust, the protruding portions 22 only occupy a small area in comparison with the entire surface area of the substrate holding unit 7, so that the amount of heat that can be transmitted through said protruding portions 22 from the wafer W is quite limited. In the present embodiment, therefore, the height of the protruding portions 22 is made sufficiently small in order to reduce the volume of said space SP, whereby the heat generated in the wafer W is transmitted to the substrate holding unit not only through the protruding portions 22 but also by thermal convection and heat radiation through the air in said space SP.
  • the height of the protruding portions 22 is preferably as small as possible. However, the flatness of the wafer W will be deteriorated if an obstacle of a size not affecting the exposure (a size about tolerance) is present in the space between the wafer W and the non-contact portion 21. For preventing such phenomenon, said height is selected larger than the size of such obstacle around the tolerance. In consideration of this fact, the height of the protruding portion 22 is preferably selected, for example, within a range from 10 to 20 ⁇ m. Heat convection is naturally present also in a space SP1 defined by the wafer and the narrow gap between the protruding portions.
  • the substrate holding unit 7 of thin plate shape, having a thickness several times larger than that of the wafer W, is larger in volume and in heat capacity than the wafer W.
  • the exposures are executed by the step-and-repeat method, and a localized heat distribution is generated on the wafer W by the stepwise successive exposures in the shot areas.
  • the substrate holding unit 7 is composed of a material of a high thermal conductivity and a low thermal expansion (for example a non-metallic material such as SiC) and is provided with small protruding portions 22.
  • the high thermal conductivity allows efficient transmission of the heat of the wafer W through the protruding portions 22, and allows the heat transmitted through said protruding portions 22 and through the space SP to be spread over the entire substrate holding unit 7.
  • the substrate holding unit is composed of a material of a high thermal conductivity and of a low thermal expansion and is constructed as a thin plate with small protruding portions as explained above, the localized heat distribution is dissipated substantially immediately and the entire substrate holding unit 7 reaches a constant temperature.
  • the substrate holding unit 7 is preferably composed of a material with a particularly small linear expansion coefficient.
  • the temperature regulating unit 8 is composed of a material of a high thermal conductivity, for example aluminum. Also, said temperature regulating unit 8 is sufficiently larger, in volume, than the substrate holding unit 7. Consequently, the temperature regulating unit 8 is larger, in heat capacity, than the substrate holding unit 7, so that the heat thereof can be uniformly transmitted to the temperature regulating unit 8 substantially without any temperature rise therein. Also, as the circulating path 9 provided in the temperature regulating unit 8 is so distributed as to cover the entire substrate holding unit 7 (for example, in spiral form substantially same in size to the substrate holding unit 7), the temperature regulating unit 8 can sufficiently discharge the heat from the substrate holding unit 7.
  • the above-explained two-layered structure of the substrate holding unit and the temperature regulating unit is effective to isotropically absorb the heat generated on the wafer W and to precisely and efficiently control the temperature of the substrate holding unit. Also, because of said two-layered structure, the substrate holding unit 7 and the temperature regulating unit 8 need not be composed of the same material. Furthermore, said two-layered structure of the substrate holding unit 7 and the temperature regulating unit 8 with mutual fixation of the two by vacuum suction is effective to eliminate the influence of distortion to said substrate holding unit 7, resulting from the difference in thermal expansion of the materials of said units.
  • the fixation of the substrate holding unit 7 and the temperature regulating unit 8 by vacuum suction allows selection of the materials for these units according to the purposes thereof. For example, it is rendered possible to reduce the cost by constituting the substrate holding unit 7 with a more expensive material for obtaining a high thermal conductivity and a low thermal expansion, and the temperature regulating unit 8 with a less expensive material for obtaining a high thermal conductivity and a larger heat capacity.
  • the mutually separable structure of the substrate holding unit 7 and the temperature regulating unit 8 allows for removal of the substrate holding unit 7 for cleaning thereof, independently from the temperature regulating unit 8. If the substrate holding unit and the temperature regulating unit are integrally constructed as in the prior art, the temperature regulating fluid in the temperature regulating unit has to be taken out at such cleaning operation. On the other hand, the mutually separable structure of the substrate holding unit 7 and the temperature regulating unit 8 as shown in FIG. 1 allows only the substrate holding unit 7 to be taken out and cleaned, without necessity for taking out the fluid, thus improving the efficiency of operation.
  • the heat accumulated in the wafer W is transmitted to the substrate holding unit 7 through the protruding portions 22. Also, since the height of the protruding portions 22 is small as explained before, the heat accumulated in the wafer W is transmitted by thermal convection to the substrate holding unit 7, through the spaces SP, SP1 between the wafer W and the non-contact portion 21.
  • the substrate holding unit 7 is composed of a material of high thermal conductivity and is formed as a thin plate, the temperature distribution on the wafer W becomes substantially uniform within a short time (time until the step motion to the next shot area is completed).
  • the heat accumulated in the substrate holding unit 7 is uniformly transferred to the temperature regulating unit 8, substantially without any temperature rise therein, and is discharged by the fluid circulating within the temperature regulating unit 8.
  • the fluid is controlled at a constant temperature by the temperature regulating unit 8, and the temperature of the fluid is so controlled that the temperature of the substrate holding unit 7 becomes constant.
  • the thermal conductivities of the substrate holding unit 7 and the temperature regulating unit 8, the volume of the spaces SP, SP1, the temperature and speed of the fluid are so determined that the operations of heat absorption by the substrate holding unit 7, heat conduction to the temperature regulating unit 8 and heat discharge therefrom are completed within a time of step motion to the next shot area.
  • the wafer W does not generate localized heat but always maintains a substantially constant temperature, whereby the error in image magnification or in alignment due to heat can be prevented.
  • the heat of the wafer W may not be sufficiently transferred to the substrate holding unit prior to the next exposure, or the heat discharge may not be sufficiently conducted with the fluid of the predetermined temperature prior to the next exposure.
  • plural temperature sensors 23 for measuring the temperature of the substrate holding unit 7, in order to monitor the states of heat conduction and heat discharge, and the exposure of the next shot area may be executed after the completion of heat discharge.
  • a temperature sensor 23 for monitoring the temperature state, thereby controlling the temperature of the fluid.

Abstract

A substrate holding apparatus is provided with a plate-shaped substrated holding unit including a first surface having plural protruding portions coming into contact with a plate-shaped substrate. The apparatus is a substantially flat second surface and adapted to support the substrate on the substrate holding unit by suction and comprises a temperature regulating unit which is composed of a material of a high thermal conductivity and positioned as to contact the second surface, a heat discharging the heat from the substrate holding unit, and a heat discharge control unit for controlling the heat discharging property of the heat discharging unit. The substrate holding unit is composed of a material of a high thermal conductivity and a low thermal expansion coefficient and is formed as a thin plate smaller in volume than the temperature regulating unit, and the protruding portions are formed as small projections in order to transfer the localized heat of the substrate to the substrate holding unit through the protruding portions and a space formed by the substrate and the protruding portions.

Description

This is a continuation of application Ser. No. 08/175,124 filed Dec. 29, 1993, now abandoned.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a substrate holding apparatus, and more particularly to a substrate holding apparatus adapted for use in an apparatus for producing integrated circuits, substrates for liquid crystal display panels, thin film magnetic heads or the like.
2. Related Background Art
In the conventional apparatus of this sort, the substrate holding unit is provided therein with a temperature sensor for monitoring the temperature thereof. The substrate holding unit is further provided therein with heating means and cooling means, of which at least either is controlled by a control system, based on the information from said temperature sensor, in such a manner that the substrate holding unit is maintained within a predetermined temperature range.
Such conventional technology explained above has been associated with a drawback that the entire substrate holding unit does not show uniform temperature distribution. This drawback will be explained in the following, for the exemplary case, of step-and-repeat exposure in which each of plural shot areas is exposed by repetition of exposure and stepping operation. In the course of said step-and-repeat operation, the temperature rises in a part of the shot areas, and, because of the displacement of the exposed shot area in time, there is formed a non-linear temperature distribution within the entire area of the substrate holding unit.
Because the temperature distribution within the area of the substrate holding unit varies with time as a result of the step-and-repeat operation, it is not possible to exactly control the temperature of the substrate holding unit by a single temperature sensor and by a set of heating means and cooling means.
Also, in order to reduce the dust deposition onto the rear face of the substrate, the recent substrate holding apparatus is designed with a reduced contact area with the substrate. In such substrate holding apparatus designed with a reduced contact area, the air present between the non-contact portion of the apparatus and the substrate functions as heat-insulating material. For this reason, the heat of the substrate is transmitted only through the contact portions of the substrate holding unit. As a result, the substrate holding unit designed with a reduced contact area, even if provided therein with a temperature regulating member, is incapable of efficient temperature regulation due to the reduced contact area with the substrate.
Still a further drawback of conventional apparatus is that, the substrate holding unit itself becomes bulky because of the presence of the heating and cooling means therein. For this reason, the method of temperature regulation of the substrate by regulating the temperature of the substrate holding unit is incapable of prompt temperature control, thus resulting in a loss in the throughput.
SUMMARY OF THE INVENTION
In consideration of the foregoing, an object of the present invention is to enable exact and efficient control of the substrate temperature.
The above-mentioned object can be attained, according to the present invention, by a substrate holding apparatus comprising:
a plate-shaped substrate holding unit provided with a first surface having plural protruding parts to be maintained in contact with a substrate, and a second surface opposed to said first surface;
a temperature regulating unit provided in contact with said second surface and adapted to absorb the heat accumulated in said substrate holding unit; and
a temperature control unit for regulating the temperature of said temperature regulating unit.
According to the present invention, the protruding portions (contact layer) of the substrate holding unit are so limited in height as to realize a very small gap between the substrate and the non-contact areas (other than the protruding portions of the substrate holding unit), so that the heat generated on the substrate can be transmitted not only through the contact layer but also can be efficiently transmitted, by heat convection, to the substrate holding unit.
Also, the substrate holding unit is composed of a material of high thermal conductivity and is designed with a reduced thickness, so that the local heat distribution generated in the substrate can be cancelled on substantially real-time basis to attain a uniform temperature over the entire substrate holding unit. Furthermore, the heat uniformly transmitted to the substrate holding unit is transmitted to and absorbed by the temperature regulating unit on which the substrate holding unit is provided. As the temperature regulating unit is composed of a material of high thermal conductivity, it can efficiently absorb the heat generated in said substrate holding unit.
Furthermore, since said temperature regulating unit is sufficiently larger in volume than said substrate holding unit, the heat is uniformly transmitted to the entire temperature regulating unit, substantially without any temperature increase therein, and is then discharged by temperature-regulating fluid which is precisely temperature controlled.
As explained in the foregoing, the substrate holding apparatus of the present invention, being provided with a thin plate-shaped substrate holding unit having small protruding portions and a temperature regulating unit sufficiently larger in volume than the substrate holding unit, is capable of transmitting the uneven heat distribution, induced by local thermal change on the substrate, through the substrate holding unit and the temperature regulating unit in uniform manner. It is also capable of discharging the heat from the temperature regulating unit substantially without any temperature rise in the substrate holding unit. Furthermore, the separate structure of the substrate holding unit and the temperature regulating unit improves the efficiency of operations such as cleaning. Also, the substrate holding unit and the temperature regulating unit, being mutually fixed by vacuum, are free from the influence of distortion resulting from the difference in thermal expansion coefficients.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a schematic view of a projection exposure apparatus equipped with a substrate holding unit embodying the present invention;
FIG. 2 is a cross-sectional view of a substrate holding unit and a temperature regulating unit embodying the present invention; and
FIG. 3 is a plan view of a substrate holding unit embodying the present invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
FIG. 1 is a schematic view of a projection exposure apparatus equipped with a substrate holding unit embodying the present invention.
Exposing light, emitted from a light source 1, such as a mercury lamp or an excimer laser, illuminates a mask R with a uniform intensity through a lens system 2 and a mirror 3. The exposing light transmitted by the mask reaches a wafer W through a projection optical system PL, which forms, on said wafer W, an image of the pattern on the mask
A temperature regulating unit 8 is placed on a stage 10, and a substrate holding unit 7 holding the wafer W is placed on the temperature regulating unit 8. Said stage 10 is rendered two-dimensionally movable, and the position thereof is measured by an interferometer 12. Based on the position information from said interferometer 12, a control system 13 controls a driving unit M such as a motor. Through such control the stage 10 can be placed at an arbitrary position, and there can be achieved exposures by the step-and-repeat method.
In the following there will be explained a substrate holding control unit 6, which maintains suction holes 20 (cf. FIG. 2) of the substrate holding unit 7 in vacuum state through a vacuum line 6a, whereby the wafer W is supported by suction by the substrate holding unit 7. The substrate holding control unit 6 also causes the substrate holding unit 7 to be supported by suction on the temperature regulating unit 8, through a vacuum line 6b. Said suction holding of the substrate holding unit 7 by the temperature regulating unit 8 through said vacuum line 6b and that of the wafer W by the substrate holding unit 7 through the vacuum line 6a are independently controllable. Consequently it is possible to release the suction holding of the wafer W while the substrate holding unit 7 is supported by suction on the temperature regulating unit 8.
The temperature regulating unit 8 is further provided with a circulating path (heat discharge unit) 9 for circulating temperature-controlled fluid (for example water, inert liquid, air, nitrogen etc.), so as to cover the entire substrate holding unit 7. The fluid from a temperature control unit 11 is supplied to the circulating path 9 through a line 11a, and returns to the temperature control unit 11 through a line 11b. The temperature control unit 11 effects precise temperature control so as maintain the fluid at a substantially constant temperature. Said constant temperature of the fluid is determined, for example, by the stage temperature prior to exposure, and is preferably made to coincide with the temperature of the main body of the projection exposure apparatus. The temperature control unit 11 is further provided with a fluid control unit 11A for maintaining the fluid at a substantially constant speed. The fluid temperature may be determined in advance, but it may also be controlled according to the information from a temperature sensor 23, provided for measuring the temperature of the substrate holding unit 7. The details of such temperature control utilizing the temperature sensor will be explained later.
In the following there will be explained the details of the substrate holding unit 7 and the temperature regulating unit 8, with reference to FIG. 2 which is a cross-sectional view of the temperature regulating unit 8 and the substrate holding unit 7 with the wafer W supported thereon, and FIG. 3 which is a plan view of the substrate holding unit 7.
As shown in FIG. 2, the substrate holding unit 7 formed as a thin plate is provided with a plurality of protruding portions 22a, 22b, projecting only by a small amount. On the surface of the substrate holding unit 7, there is provided a vacuum suction hole 20 in each area between the protruding portions (each narrow gap between the protruding portions in FIG. 2), and the wafer W can be fixed by suction to the substrate holding unit 7, as explained before, by sucking air from said vacuum suction holes 20. The surface areas of the substrate holding unit 7 surrounded by plural protruding portions, particularly the wide areas 21a, 21b between the protruding portions, constitute a non-contact portion, which defines a space SP in cooperation with the wafer W. The volume of said space SP is determined by the height of the protruding portions 22 and the area of the non-contact portion 21. If said volume is large, the air in said space SP functions as a heat insulating material. In consideration of the possible contamination by dust, the protruding portions 22 only occupy a small area in comparison with the entire surface area of the substrate holding unit 7, so that the amount of heat that can be transmitted through said protruding portions 22 from the wafer W is quite limited. In the present embodiment, therefore, the height of the protruding portions 22 is made sufficiently small in order to reduce the volume of said space SP, whereby the heat generated in the wafer W is transmitted to the substrate holding unit not only through the protruding portions 22 but also by thermal convection and heat radiation through the air in said space SP. The height of the protruding portions 22 is preferably as small as possible. However, the flatness of the wafer W will be deteriorated if an obstacle of a size not affecting the exposure (a size about tolerance) is present in the space between the wafer W and the non-contact portion 21. For preventing such phenomenon, said height is selected larger than the size of such obstacle around the tolerance. In consideration of this fact, the height of the protruding portion 22 is preferably selected, for example, within a range from 10 to 20 μm. Heat convection is naturally present also in a space SP1 defined by the wafer and the narrow gap between the protruding portions. The substrate holding unit 7 of thin plate shape, having a thickness several times larger than that of the wafer W, is larger in volume and in heat capacity than the wafer W.
In the present embodiment, the exposures are executed by the step-and-repeat method, and a localized heat distribution is generated on the wafer W by the stepwise successive exposures in the shot areas. However, the substrate holding unit 7 is composed of a material of a high thermal conductivity and a low thermal expansion (for example a non-metallic material such as SiC) and is provided with small protruding portions 22. The high thermal conductivity allows efficient transmission of the heat of the wafer W through the protruding portions 22, and allows the heat transmitted through said protruding portions 22 and through the space SP to be spread over the entire substrate holding unit 7.
As the substrate holding unit is composed of a material of a high thermal conductivity and of a low thermal expansion and is constructed as a thin plate with small protruding portions as explained above, the localized heat distribution is dissipated substantially immediately and the entire substrate holding unit 7 reaches a constant temperature. Also, as the low thermal expansion is effective for preventing the positional displacement of the wafer W, the substrate holding unit 7 is preferably composed of a material with a particularly small linear expansion coefficient.
The temperature regulating unit 8 is composed of a material of a high thermal conductivity, for example aluminum. Also, said temperature regulating unit 8 is sufficiently larger, in volume, than the substrate holding unit 7. Consequently, the temperature regulating unit 8 is larger, in heat capacity, than the substrate holding unit 7, so that the heat thereof can be uniformly transmitted to the temperature regulating unit 8 substantially without any temperature rise therein. Also, as the circulating path 9 provided in the temperature regulating unit 8 is so distributed as to cover the entire substrate holding unit 7 (for example, in spiral form substantially same in size to the substrate holding unit 7), the temperature regulating unit 8 can sufficiently discharge the heat from the substrate holding unit 7.
The above-explained two-layered structure of the substrate holding unit and the temperature regulating unit, with a heat capacity of the latter sufficiently larger than that of the former, is effective to isotropically absorb the heat generated on the wafer W and to precisely and efficiently control the temperature of the substrate holding unit. Also, because of said two-layered structure, the substrate holding unit 7 and the temperature regulating unit 8 need not be composed of the same material. Furthermore, said two-layered structure of the substrate holding unit 7 and the temperature regulating unit 8 with mutual fixation of the two by vacuum suction is effective to eliminate the influence of distortion to said substrate holding unit 7, resulting from the difference in thermal expansion of the materials of said units. Furthermore, the fixation of the substrate holding unit 7 and the temperature regulating unit 8 by vacuum suction allows selection of the materials for these units according to the purposes thereof. For example, it is rendered possible to reduce the cost by constituting the substrate holding unit 7 with a more expensive material for obtaining a high thermal conductivity and a low thermal expansion, and the temperature regulating unit 8 with a less expensive material for obtaining a high thermal conductivity and a larger heat capacity.
Furthermore, the mutually separable structure of the substrate holding unit 7 and the temperature regulating unit 8 allows for removal of the substrate holding unit 7 for cleaning thereof, independently from the temperature regulating unit 8. If the substrate holding unit and the temperature regulating unit are integrally constructed as in the prior art, the temperature regulating fluid in the temperature regulating unit has to be taken out at such cleaning operation. On the other hand, the mutually separable structure of the substrate holding unit 7 and the temperature regulating unit 8 as shown in FIG. 1 allows only the substrate holding unit 7 to be taken out and cleaned, without necessity for taking out the fluid, thus improving the efficiency of operation.
In the following there will be explained the mode of temperature regulation in the substrate holding apparatus of the above-explained structure, in an example applied to a projection exposure apparatus.
The projection exposure apparatus equipped with the stage 10, supporting the temperature regulating unit and the substrate holding unit, on which the wafer W is placed, executes the exposure operation by the step-and-repeat method. In this operation, at the exposure of each shot, there is temporarily generated an uneven temperature distribution on the wafer W. The heat accumulated in the wafer W is transmitted to the substrate holding unit 7 through the protruding portions 22. Also, since the height of the protruding portions 22 is small as explained before, the heat accumulated in the wafer W is transmitted by thermal convection to the substrate holding unit 7, through the spaces SP, SP1 between the wafer W and the non-contact portion 21. Since the substrate holding unit 7 is composed of a material of high thermal conductivity and is formed as a thin plate, the temperature distribution on the wafer W becomes substantially uniform within a short time (time until the step motion to the next shot area is completed). The heat accumulated in the substrate holding unit 7 is uniformly transferred to the temperature regulating unit 8, substantially without any temperature rise therein, and is discharged by the fluid circulating within the temperature regulating unit 8. The fluid is controlled at a constant temperature by the temperature regulating unit 8, and the temperature of the fluid is so controlled that the temperature of the substrate holding unit 7 becomes constant. The thermal conductivities of the substrate holding unit 7 and the temperature regulating unit 8, the volume of the spaces SP, SP1, the temperature and speed of the fluid are so determined that the operations of heat absorption by the substrate holding unit 7, heat conduction to the temperature regulating unit 8 and heat discharge therefrom are completed within a time of step motion to the next shot area. In this manner, even during the exposure operations by the step-and-repeat method, the wafer W does not generate localized heat but always maintains a substantially constant temperature, whereby the error in image magnification or in alignment due to heat can be prevented.
If the wafer W generates a heat localization exceeding the tolerance, the heat of the wafer W may not be sufficiently transferred to the substrate holding unit prior to the next exposure, or the heat discharge may not be sufficiently conducted with the fluid of the predetermined temperature prior to the next exposure. In such case there may be provided plural temperature sensors 23 for measuring the temperature of the substrate holding unit 7, in order to monitor the states of heat conduction and heat discharge, and the exposure of the next shot area may be executed after the completion of heat discharge. Otherwise there may be provided a temperature sensor 23, for monitoring the temperature state, thereby controlling the temperature of the fluid. As an example of such monitoring of the temperature state, if the substrate holding unit 7 reaches a predetermined temperature prior to the lapse of a predetermined time, there is judged formation of a large localization of heat, and the temperature of the fluid is lowered to enhance the heat discharge.
As will be understood from the foregoing, it is rendered possible, even in the exposure operation of the step-and-repeat method, to prevent non-linear expansion of the substrate resulting from heat accumulation by the exposures, and to prevent errors in the image magnification and in the alignment, resulting from the thermal expansion of the substrate.

Claims (16)

What is claimed is:
1. An exposure apparatus that forms patterns of a mask in plural shot areas on a substrate by an operating cycle involving repeated exposure and displacement of said substrate, and that includes a substrate holding apparatus comprising:
a) a substrate holding unit having plural protruding portions to support said substrate thereon for exposure and displacement;
b) a temperature regulating unit that absorbs heat accumulated in said substrate holding unit by contact with said substrate holding unit;
c) a temperature control unit that controls temperature of said temperature regulating unit by removing heat from said temperature regulating unit during said operating cycle; and
d) a fixation unit which releasably holds said temperature regulating unit contact with said substrate holding unit;
e) wherein said substrate holding unit is formed as a thin plate effective to ensure that localized heat formed on said substrate upon exposure is dissipated to achieve a substantially uniform thermal distribution.
2. An exposure apparatus according to claim 1, wherein the heat capacity of said temperature regulating unit is larger than that of said substrate holding unit.
3. An exposure apparatus according to claim 1 wherein said substrate holding unit and said temperature regulating unit are made of different materials.
4. An exposure apparatus according to claim 1, wherein said temperature control unit operates such that said substrate holding unit has substantially the same temperature at a start of each exposure.
5. An exposure apparatus according to claim 1, wherein said temperature control unit operates such that said substrate holding unit is maintained at a substantially constant temperature throughout said operating cycle.
6. An exposure apparatus that forms patterns of a mask in plural shot areas on a substrate by an operating cycle involving repeated exposure and displacement of said substrate, and that includes a substrate holding apparatus comprising:
a) a substrate holding unit having plural protruding portions to support said substrate thereon for exposure and displacement;
b) a temperature regulating unit that absorbs heat accumulated in said substrate holding unit by contact with said substrate holding unit;
c) a temperature control unit that controls temperature of said temperature regulating unit by removing heat from said temperature regulating unit during said operating cycle; and
d) a vacuum suction apparatus for holding said temperature regulating unit in contact with said substrate holding unit by vacuum suction.
7. An exposure apparatus according to claim 6, wherein said substrate holding unit is formed as a thin plate effective to ensure that localized heat formed on said substrate upon exposure is dissipated to achieve a substantially uniform thermal distribution.
8. An exposure apparatus according to claim 7, wherein said substrate holding unit is composed of a material having a small linear expansion coefficient.
9. An exposure apparatus according to claim 7, wherein said substrate holding unit is composed of a non-metallic material.
10. An exposure apparatus according to claim 6, wherein said substrate holding unit and said temperature regulating unit are made of different materials.
11. An exposure apparatus according to claim 6, wherein said temperature control unit operates such that said substrate holding unit has substantially the same temperature at a start of each exposure.
12. An exposure apparatus according to claim 6, wherein said temperature control unit operates such that said substrate holding unit is maintained at a substantially constant temperature throughout said operating cycle.
13. An exposure apparatus that forms patterns of a mask in plural shot areas on a substrate by an operating cycle involving repeated exposure and displacement of said substrate, and that includes a substrate holding apparatus comprising:
a) plate-shaped substrate holder having one side provided with plural protruding portions to support said substrate thereon for exposure and displacement, and an opposite side;
b) a temperature regulator having a surface adapted to contact said opposite side of substrate holder to absorb heat from said substrate holder, said temperature regulator having an internal path for passing a heat conducting fluid therethrough and having means for applying vacuum suction to said opposite side of said substrate holder to hold said surface of said temperature regulator in contact with said opposite side of said substrate holder; and
c) a temperature controller that controls temperature of said fluid during said operating cycle such that said fluid removes heat from said temperature regulator.
14. Aan exposure apparatus according to claim 13, wherein said substrate holder and said temperature regulator are made of different materials.
15. An exposure apparatus according to claim 13, wherein said temperature controller operates such that said substrate holder has substantially the same temperature at a start of each exposure.
16. An exposure apparatus according to claim 13, wherein said temperature controller operates such that said substrate holder is maintained at a substantially constant temperature during throughout said operating cycle.
US08/462,589 1993-05-07 1995-06-05 Substrate holding apparatus Expired - Fee Related US5738165A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US08/462,589 US5738165A (en) 1993-05-07 1995-06-05 Substrate holding apparatus

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP5-106469 1993-05-07
JP10646993A JP3291832B2 (en) 1992-05-19 1993-05-07 Substrate holding member and exposure apparatus
US17512493A 1993-12-29 1993-12-29
US08/462,589 US5738165A (en) 1993-05-07 1995-06-05 Substrate holding apparatus

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US17512493A Continuation 1993-05-07 1993-12-29

Publications (1)

Publication Number Publication Date
US5738165A true US5738165A (en) 1998-04-14

Family

ID=26446585

Family Applications (1)

Application Number Title Priority Date Filing Date
US08/462,589 Expired - Fee Related US5738165A (en) 1993-05-07 1995-06-05 Substrate holding apparatus

Country Status (1)

Country Link
US (1) US5738165A (en)

Cited By (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998048074A1 (en) * 1997-04-21 1998-10-29 Brooks Automation, Inc. Metered gas control in a substrate processing apparatus
US5868401A (en) * 1998-01-14 1999-02-09 Xerox Coporation Compliant flange holding apparatus
WO1999034412A2 (en) * 1997-12-31 1999-07-08 Temptronic Corporation Workpiece chuck
US5944329A (en) * 1996-09-06 1999-08-31 The Regents Of The University Of California Reversible micromachining locator
WO2000005750A1 (en) * 1998-07-23 2000-02-03 Applied Materials, Inc. Improved substrate support member
US6022417A (en) * 1995-07-12 2000-02-08 Sumnitsch; Franz Support for wafer-shaped objects, in particular silicon wafers
US6032715A (en) * 1996-06-28 2000-03-07 Sony Corporation Wafer bonding device
US6051074A (en) * 1996-06-21 2000-04-18 Micron Technology, Inc. Thermal conditioning apparatus
US6051815A (en) * 1998-03-05 2000-04-18 Nec Corporation Apparatus for heat-treating substrate and method for separating the substrate from the apparatus
US6053982A (en) * 1995-09-01 2000-04-25 Asm America, Inc. Wafer support system
US6062241A (en) * 1997-05-15 2000-05-16 Tokyo Electron Limited Substrate conveying device and substrate conveying method
US6086680A (en) * 1995-08-22 2000-07-11 Asm America, Inc. Low-mass susceptor
US6099652A (en) * 1995-06-07 2000-08-08 Saint-Gobain Industrial Ceramics, Inc. Apparatus and method for depositing a substance with temperature control
US6113702A (en) * 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
US6129546A (en) * 1998-06-25 2000-10-10 Tokyo Electron Limited Heat process apparatus and heat process method
US6131895A (en) * 1997-11-07 2000-10-17 Automa-Tech Holding device for holding a printed circuit panel
US6161749A (en) * 1998-07-13 2000-12-19 Ericsson, Inc. Method and apparatus for holding a printed circuit board during assembly
US6173948B1 (en) * 1999-01-20 2001-01-16 International Business Machines Corporation Dimensional compensating vacuum fixture
US6328096B1 (en) 1997-12-31 2001-12-11 Temptronic Corporation Workpiece chuck
US20020008858A1 (en) * 1998-02-20 2002-01-24 Christian Wagner Optical arrangement and projection exposure system for microlithography with passive thermal compensation
US6352073B1 (en) * 1998-11-12 2002-03-05 Kabushiki Kaisha Toshiba Semiconductor manufacturing equipment
US6375176B1 (en) * 1997-12-31 2002-04-23 Temptronic Corporation Workpiece chuck with guard layer having vacuum distribution pattern
US6394797B1 (en) 1997-04-02 2002-05-28 Hitachi, Ltd. Substrate temperature control system and method for controlling temperature of substrate
US6454865B1 (en) 1997-11-03 2002-09-24 Asm America, Inc. Low mass wafer support system
US6460437B2 (en) 1998-05-21 2002-10-08 Ophir Optronics Ltd. Precision double-sided aspheric element
US6464795B1 (en) 1999-05-21 2002-10-15 Applied Materials, Inc. Substrate support member for a processing chamber
US6464790B1 (en) 1997-07-11 2002-10-15 Applied Materials, Inc. Substrate support member
WO2002099851A2 (en) * 2001-06-01 2002-12-12 Litrex Corporation Temperature controlled vacuum chuck
US6494984B2 (en) * 1999-01-14 2002-12-17 Semitool, Inc. Flat media processing machine
US20030020891A1 (en) * 2001-07-26 2003-01-30 Canon Kabushiki Kaisha Substrate holding apparatus and exposure apparatus using the same
US20030034341A1 (en) * 2000-04-29 2003-02-20 Ibiden Co., Ltd. Ceramic heater and process for temperature control thereof
US6576064B2 (en) * 1997-07-10 2003-06-10 Sandia Corporation Support apparatus for semiconductor wafer processing
US20030132218A1 (en) * 1999-12-14 2003-07-17 Ibiden Co., Ltd. Ceramic heater and supporting pin
US6617870B1 (en) * 1997-10-06 2003-09-09 Samsung Electronics Co., Ltd. Semiconductor probe station
US6645701B1 (en) 1995-11-22 2003-11-11 Nikon Corporation Exposure method and exposure apparatus
US20040023371A1 (en) * 2002-07-30 2004-02-05 Adrian Fawcett Sample block apparatus and method for maintaining a microcard on a sample block
US6709721B2 (en) 2001-03-28 2004-03-23 Applied Materials Inc. Purge heater design and process development for the improvement of low k film properties
US20040087168A1 (en) * 1996-07-08 2004-05-06 Granneman Ernst Hendrik August Method and apparatus for supporting a semiconductor wafer during processing
US20040140176A1 (en) * 2003-01-09 2004-07-22 Takaaki Inoue Convey device for a plate-like workpiece
US20040175939A1 (en) * 2003-03-04 2004-09-09 Cree Lighting Company. Susceptor apparatus for inverted type MOCVD reactor
US20040178553A1 (en) * 2002-12-20 2004-09-16 Camm David Malcolm Methods and systems for supporting a workpiece and for heat-treating the workpiece
US20040187894A1 (en) * 2003-03-31 2004-09-30 Lam Research Corporation Wafer clamping apparatus and method for operating the same
US20040238522A1 (en) * 2001-06-01 2004-12-02 Edwards Charles O. Temperature controlled vacuum chuck
US20050034675A1 (en) * 2000-03-21 2005-02-17 Sharp Kabushiki Kaisha Susceptor and surface processing method
US20050046819A1 (en) * 2003-05-30 2005-03-03 Asml Holding N.V. Maskless lithography systems and methods utilizing spatial light modulator arrays
US20050067147A1 (en) * 2003-09-02 2005-03-31 Thayer John Gilbert Loop thermosyphon for cooling semiconductors during burn-in testing
US20050067146A1 (en) * 2003-09-02 2005-03-31 Thayer John Gilbert Two phase cooling system method for burn-in testing
US20050067155A1 (en) * 2003-09-02 2005-03-31 Thayer John Gilbert Heat pipe evaporator with porous valve
US20050068734A1 (en) * 2003-09-02 2005-03-31 Thayer John Gilbert Heat pipe with chilled liquid condenser system for burn-in testing
US20050170314A1 (en) * 2002-11-27 2005-08-04 Richard Golden Dental pliers design with offsetting jaw and pad elements for assisting in removing upper and lower teeth and method for removing teeth utilizing the dental plier design
EP1650604A3 (en) * 2004-10-22 2006-05-03 ASML Netherlands B.V. Apparatus and method for supporting and thermally conditioning a substrate, a support table, a chuck and a lithographic apparatus comprising said support table
US20060269390A1 (en) * 2002-05-13 2006-11-30 Cree, Inc. Susceptor for MOCVD reactor
US20070008512A1 (en) * 2005-07-06 2007-01-11 Asml Netherlands B.V. Substrate handler, lithographic apparatus and device manufacturing method
US20070040265A1 (en) * 2005-08-17 2007-02-22 Applied Materials, Inc. Substrate support having brazed plates and resistance heater
US20070128888A1 (en) * 2005-12-06 2007-06-07 Shigehiro Goto Substrate heat treatment apparatus
US20070157886A1 (en) * 2005-09-30 2007-07-12 Applied Materials, Inc. Substrate support assembly with thermal isolating plate
US20080011737A1 (en) * 2006-06-07 2008-01-17 Tokyo Electron Limited Hot plate and process for producing the same
US20080106707A1 (en) * 2004-02-04 2008-05-08 Nikon Corporation Exposure Apparatus, Exposure Method, and Method for Producing Device
CN100390957C (en) * 2005-03-17 2008-05-28 东京毅力科创株式会社 Substrate supporting member and substrate processing apparatus
US20080157452A1 (en) * 2006-11-15 2008-07-03 Mattson Technology Canada, Inc. Systems and methods for supporting a workpiece during heat-treating
US20080225244A1 (en) * 2007-03-12 2008-09-18 Asml Netherlands B.V. Lithographic apparatus and method
US20080278695A1 (en) * 2005-12-06 2008-11-13 Nikon Corporation Exposing method, exposure apparatus, and device fabricating method
US20080309894A1 (en) * 2004-01-20 2008-12-18 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus and measuring device for a projection lens
US20090115977A1 (en) * 2005-04-18 2009-05-07 Nikon Corporation Exposure Apparatus, Exposure Method, and Device Manufacturing Method
US20090135385A1 (en) * 2006-05-09 2009-05-28 Carl Zeiss Smt Ag Optical imaging device with thermal attenuation
US20090156015A1 (en) * 2007-12-18 2009-06-18 Asm Genitech Korea Ltd. Deposition apparatus
US20090194264A1 (en) * 2008-02-06 2009-08-06 Tokyo Electron Limited Substrate mounting table, substrate processing apparatus and substrate temperature control method
US20090279059A1 (en) * 2007-07-31 2009-11-12 Nikon Corporation Exposure apparatus adjusting method, exposure apparatus, and device fabricating method
US20100107973A1 (en) * 2008-10-31 2010-05-06 Asm America, Inc. Self-centering susceptor ring assembly
US20110177624A1 (en) * 2008-05-16 2011-07-21 David Malcolm Camm Workpiece breakage prevention method and apparatus
CN102152969A (en) * 2009-12-28 2011-08-17 精工爱普生株式会社 Non-contact holder and non-contact holding hand
US20120146273A1 (en) * 2009-04-22 2012-06-14 Tiefenboeck Herbert Receiving device for receiving semiconductor substrates
US20140118709A1 (en) * 2012-10-26 2014-05-01 Canon Kabushiki Kaisha Holding apparatus, lithography apparatus, and method of manufacturing article
US20140313493A1 (en) * 2013-04-18 2014-10-23 E I Du Pont De Nemours And Company Exposure apparatus and a method for exposing a photosensitive element and a method for preparing a printing form from the photosensitive element
US20180022044A1 (en) * 2016-07-19 2018-01-25 General Electric Company Retaining plates and disposable build plates for additive manufacturing systems
USD914620S1 (en) 2019-01-17 2021-03-30 Asm Ip Holding B.V. Vented susceptor
USD920936S1 (en) 2019-01-17 2021-06-01 Asm Ip Holding B.V. Higher temperature vented susceptor
USRE49066E1 (en) 2015-10-06 2022-05-10 Asml Holding N.V. Chucks and clamps for holding objects of a lithographic apparatus and methods for controlling a temperature of an object held by a clamp of a lithographic apparatus
US11404302B2 (en) 2019-05-22 2022-08-02 Asm Ip Holding B.V. Substrate susceptor using edge purging
US11764101B2 (en) 2019-10-24 2023-09-19 ASM IP Holding, B.V. Susceptor for semiconductor substrate processing

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3740900A (en) * 1970-07-01 1973-06-26 Signetics Corp Vacuum chuck assembly for semiconductor manufacture
US4361749A (en) * 1980-02-04 1982-11-30 Western Electric Co., Inc. Uniformly cooled plasma etching electrode
GB2114813A (en) * 1982-01-29 1983-08-24 Varian Associates Apparatus for thermal treatment of semiconductor wafers by gas conduction incorporating peripheral gas inlet
US4457359A (en) * 1982-05-25 1984-07-03 Varian Associates, Inc. Apparatus for gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer
JPS60127935A (en) * 1983-12-14 1985-07-08 Fujitsu Ltd Wafer chuck
US4721462A (en) * 1986-10-21 1988-01-26 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Active hold-down for heat treating
JPH01205441A (en) * 1988-02-10 1989-08-17 Nec Yamaguchi Ltd Stage for apparatus for cutting and dividing semiconductor element wafer
JPH01287923A (en) * 1988-05-13 1989-11-20 Mitsubishi Electric Corp Semiconductor wafer cooling device
JPH01319965A (en) * 1988-06-21 1989-12-26 Nikon Corp Sucker for substrate
JPH0395918A (en) * 1989-09-08 1991-04-22 Canon Inc Substrate holding device
US5033538A (en) * 1989-05-08 1991-07-23 Balzers Aktiengesellschaft Workpiece carrier for a disk-shaped workpiece as well as a vacuum process space
JPH03256677A (en) * 1990-03-02 1991-11-15 Sony Corp Thin piece suction holding device
JPH04152512A (en) * 1990-10-16 1992-05-26 Fujitsu Ltd Wafer chuck
US5281794A (en) * 1990-05-25 1994-01-25 Kabushiki Kaisha Shinkawa Heater block for use in a bonder utilizing vacuum suction attachment means

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3740900A (en) * 1970-07-01 1973-06-26 Signetics Corp Vacuum chuck assembly for semiconductor manufacture
US4361749A (en) * 1980-02-04 1982-11-30 Western Electric Co., Inc. Uniformly cooled plasma etching electrode
GB2114813A (en) * 1982-01-29 1983-08-24 Varian Associates Apparatus for thermal treatment of semiconductor wafers by gas conduction incorporating peripheral gas inlet
US4457359A (en) * 1982-05-25 1984-07-03 Varian Associates, Inc. Apparatus for gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer
JPS60127935A (en) * 1983-12-14 1985-07-08 Fujitsu Ltd Wafer chuck
US4721462A (en) * 1986-10-21 1988-01-26 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Active hold-down for heat treating
JPH01205441A (en) * 1988-02-10 1989-08-17 Nec Yamaguchi Ltd Stage for apparatus for cutting and dividing semiconductor element wafer
JPH01287923A (en) * 1988-05-13 1989-11-20 Mitsubishi Electric Corp Semiconductor wafer cooling device
JPH01319965A (en) * 1988-06-21 1989-12-26 Nikon Corp Sucker for substrate
US5033538A (en) * 1989-05-08 1991-07-23 Balzers Aktiengesellschaft Workpiece carrier for a disk-shaped workpiece as well as a vacuum process space
JPH0395918A (en) * 1989-09-08 1991-04-22 Canon Inc Substrate holding device
JPH03256677A (en) * 1990-03-02 1991-11-15 Sony Corp Thin piece suction holding device
US5281794A (en) * 1990-05-25 1994-01-25 Kabushiki Kaisha Shinkawa Heater block for use in a bonder utilizing vacuum suction attachment means
JPH04152512A (en) * 1990-10-16 1992-05-26 Fujitsu Ltd Wafer chuck

Cited By (175)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6099652A (en) * 1995-06-07 2000-08-08 Saint-Gobain Industrial Ceramics, Inc. Apparatus and method for depositing a substance with temperature control
US6022417A (en) * 1995-07-12 2000-02-08 Sumnitsch; Franz Support for wafer-shaped objects, in particular silicon wafers
US6086680A (en) * 1995-08-22 2000-07-11 Asm America, Inc. Low-mass susceptor
US7655093B2 (en) 1995-09-01 2010-02-02 Asm America, Inc. Wafer support system
US6343183B1 (en) 1995-09-01 2002-01-29 Asm America, Inc. Wafer support system
US7186298B2 (en) 1995-09-01 2007-03-06 Asm America, Inc. Wafer support system
US20070131173A1 (en) * 1995-09-01 2007-06-14 Asm America, Inc. Wafer support system
US6491757B2 (en) 1995-09-01 2002-12-10 Asm America, Inc. Wafer support system
US6454866B1 (en) 1995-09-01 2002-09-24 Asm America, Inc. Wafer support system
US6113702A (en) * 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
US20040198153A1 (en) * 1995-09-01 2004-10-07 Halpin Michael W. Wafer support system
US6053982A (en) * 1995-09-01 2000-04-25 Asm America, Inc. Wafer support system
US6203622B1 (en) 1995-09-01 2001-03-20 Asm America, Inc. Wafer support system
US6692576B2 (en) 1995-09-01 2004-02-17 Asm America, Inc. Wafer support system
US6645701B1 (en) 1995-11-22 2003-11-11 Nikon Corporation Exposure method and exposure apparatus
US6090209A (en) * 1996-06-21 2000-07-18 Micron Technology, Inc. Thermal conditioning apparatus
US6150638A (en) * 1996-06-21 2000-11-21 Micron Technology, Inc. Thermal conditioning apparatus
US6051074A (en) * 1996-06-21 2000-04-18 Micron Technology, Inc. Thermal conditioning apparatus
US6171402B1 (en) 1996-06-21 2001-01-09 Micron Technology, Inc. Thermal conditioning apparatus
US6403933B1 (en) 1996-06-21 2002-06-11 Micron Technology, Inc. Thermal conditioning apparatus
US6032715A (en) * 1996-06-28 2000-03-07 Sony Corporation Wafer bonding device
US6805749B2 (en) 1996-07-08 2004-10-19 Asm International, N.V. Method and apparatus for supporting a semiconductor wafer during processing
US20050037619A1 (en) * 1996-07-08 2005-02-17 Granneman Ernst Hendrik August Method and apparatus for supporting a semiconductor wafer during processing
US20040087168A1 (en) * 1996-07-08 2004-05-06 Granneman Ernst Hendrik August Method and apparatus for supporting a semiconductor wafer during processing
US7312156B2 (en) 1996-07-08 2007-12-25 Asm International N.V. Method and apparatus for supporting a semiconductor wafer during processing
US6460436B1 (en) 1996-09-06 2002-10-08 The Regents Of The University Of California Reversible micromachining locator
US5944329A (en) * 1996-09-06 1999-08-31 The Regents Of The University Of California Reversible micromachining locator
US6394797B1 (en) 1997-04-02 2002-05-28 Hitachi, Ltd. Substrate temperature control system and method for controlling temperature of substrate
US6518548B2 (en) 1997-04-02 2003-02-11 Hitachi, Ltd. Substrate temperature control system and method for controlling temperature of substrate
WO1998048074A1 (en) * 1997-04-21 1998-10-29 Brooks Automation, Inc. Metered gas control in a substrate processing apparatus
US5879461A (en) * 1997-04-21 1999-03-09 Brooks Automation, Inc. Metered gas control in a substrate processing apparatus
US6193807B1 (en) * 1997-05-15 2001-02-27 Tokyo Electron Limited Substrate conveying device and substrate conveying method
US6062241A (en) * 1997-05-15 2000-05-16 Tokyo Electron Limited Substrate conveying device and substrate conveying method
US6576064B2 (en) * 1997-07-10 2003-06-10 Sandia Corporation Support apparatus for semiconductor wafer processing
US6464790B1 (en) 1997-07-11 2002-10-15 Applied Materials, Inc. Substrate support member
US6617870B1 (en) * 1997-10-06 2003-09-09 Samsung Electronics Co., Ltd. Semiconductor probe station
US6454865B1 (en) 1997-11-03 2002-09-24 Asm America, Inc. Low mass wafer support system
US6893507B2 (en) 1997-11-03 2005-05-17 Asm America, Inc. Self-centering wafer support system
US20030029571A1 (en) * 1997-11-03 2003-02-13 Goodman Matthew G. Self-centering wafer support system
US6131895A (en) * 1997-11-07 2000-10-17 Automa-Tech Holding device for holding a printed circuit panel
US6073681A (en) * 1997-12-31 2000-06-13 Temptronic Corporation Workpiece chuck
US6328096B1 (en) 1997-12-31 2001-12-11 Temptronic Corporation Workpiece chuck
US20050011768A1 (en) * 1997-12-31 2005-01-20 Stone William M. Workpiece chuck
WO1999034412A2 (en) * 1997-12-31 1999-07-08 Temptronic Corporation Workpiece chuck
WO1999034412A3 (en) * 1997-12-31 1999-12-29 Temptronic Corp Workpiece chuck
US6375176B1 (en) * 1997-12-31 2002-04-23 Temptronic Corporation Workpiece chuck with guard layer having vacuum distribution pattern
US7331097B2 (en) 1997-12-31 2008-02-19 Temptronic Corporation Method of manufacturing a workpiece chuck
US6540014B2 (en) 1997-12-31 2003-04-01 Temptronic Corporation Workpiece chuck
US5868401A (en) * 1998-01-14 1999-02-09 Xerox Coporation Compliant flange holding apparatus
US20020008858A1 (en) * 1998-02-20 2002-01-24 Christian Wagner Optical arrangement and projection exposure system for microlithography with passive thermal compensation
US7274430B2 (en) 1998-02-20 2007-09-25 Carl Zeiss Smt Ag Optical arrangement and projection exposure system for microlithography with passive thermal compensation
US6051815A (en) * 1998-03-05 2000-04-18 Nec Corporation Apparatus for heat-treating substrate and method for separating the substrate from the apparatus
EP0940843A3 (en) * 1998-03-05 2002-10-23 Nec Corporation Apparatus for heat-treating substrate and method for separating the substrate from the apparatus
US6622599B1 (en) * 1998-05-21 2003-09-23 Ophir Optronics Ltd. Precision double-sided aspheric element
US7028595B2 (en) 1998-05-21 2006-04-18 Ophir Otronics Ltd. Precision double-sided aspheric element
US6460437B2 (en) 1998-05-21 2002-10-08 Ophir Optronics Ltd. Precision double-sided aspheric element
US20040058625A1 (en) * 1998-05-21 2004-03-25 Baruch Ben-Menachem Precision double-sided aspheric element
US6129546A (en) * 1998-06-25 2000-10-10 Tokyo Electron Limited Heat process apparatus and heat process method
US6161749A (en) * 1998-07-13 2000-12-19 Ericsson, Inc. Method and apparatus for holding a printed circuit board during assembly
WO2000005750A1 (en) * 1998-07-23 2000-02-03 Applied Materials, Inc. Improved substrate support member
US6739326B2 (en) 1998-11-12 2004-05-25 Kabushiki Kaisha Toshiba Semiconductor manufacturing equipment
US6352073B1 (en) * 1998-11-12 2002-03-05 Kabushiki Kaisha Toshiba Semiconductor manufacturing equipment
US6494984B2 (en) * 1999-01-14 2002-12-17 Semitool, Inc. Flat media processing machine
US6173948B1 (en) * 1999-01-20 2001-01-16 International Business Machines Corporation Dimensional compensating vacuum fixture
US6271503B1 (en) * 1999-01-20 2001-08-07 International Business Machines Corporation Dimensional compensating vacuum fixture
US6464795B1 (en) 1999-05-21 2002-10-15 Applied Materials, Inc. Substrate support member for a processing chamber
US20030132218A1 (en) * 1999-12-14 2003-07-17 Ibiden Co., Ltd. Ceramic heater and supporting pin
US20050034675A1 (en) * 2000-03-21 2005-02-17 Sharp Kabushiki Kaisha Susceptor and surface processing method
US20030034341A1 (en) * 2000-04-29 2003-02-20 Ibiden Co., Ltd. Ceramic heater and process for temperature control thereof
US6709721B2 (en) 2001-03-28 2004-03-23 Applied Materials Inc. Purge heater design and process development for the improvement of low k film properties
US20040238522A1 (en) * 2001-06-01 2004-12-02 Edwards Charles O. Temperature controlled vacuum chuck
US7160105B2 (en) 2001-06-01 2007-01-09 Litrex Corporation Temperature controlled vacuum chuck
WO2002099851A2 (en) * 2001-06-01 2002-12-12 Litrex Corporation Temperature controlled vacuum chuck
WO2002099851A3 (en) * 2001-06-01 2004-01-29 Litrex Corp Temperature controlled vacuum chuck
US6836316B2 (en) * 2001-07-26 2004-12-28 Canon Kabushiki Kaisha Substrate holding apparatus and exposure apparatus using the same
US20030020891A1 (en) * 2001-07-26 2003-01-30 Canon Kabushiki Kaisha Substrate holding apparatus and exposure apparatus using the same
US8372204B2 (en) 2002-05-13 2013-02-12 Cree, Inc. Susceptor for MOCVD reactor
US20060269390A1 (en) * 2002-05-13 2006-11-30 Cree, Inc. Susceptor for MOCVD reactor
EP1539920A4 (en) * 2002-07-30 2009-07-29 Applera Corp Sample block apparatus and method for maintaining a microcard on a sample block
WO2004025247A3 (en) * 2002-07-30 2004-12-23 Applera Corp Sample block apparatus and method for maintaining a microcard on a sample block
US7452712B2 (en) * 2002-07-30 2008-11-18 Applied Biosystems Inc. Sample block apparatus and method of maintaining a microcard on a sample block
US7858365B2 (en) * 2002-07-30 2010-12-28 Applied Biosystems, Llc Sample block apparatus and method for maintaining a microcard on a sample block
US10253361B2 (en) 2002-07-30 2019-04-09 Applied Biosystems, Llc Sample block apparatus and method for maintaining a microcard on a sample block
EP2402427A3 (en) * 2002-07-30 2013-10-16 Life Technologies Corporation Sample block apparatus and method for retaining a microcard on a sample
EP1539920A2 (en) * 2002-07-30 2005-06-15 Applera Corporation Sample block apparatus and method for maintaining a microcard on a sample block
US8247221B2 (en) 2002-07-30 2012-08-21 Applied Biosystems, Llc Sample block apparatus and method for maintaining a microcard on sample block
US20040023371A1 (en) * 2002-07-30 2004-02-05 Adrian Fawcett Sample block apparatus and method for maintaining a microcard on a sample block
US20090029454A1 (en) * 2002-07-30 2009-01-29 Applera Corporation Sample block apparatus and method for maintaining a microcard on a sample block
EP2272944A1 (en) * 2002-07-30 2011-01-12 Life Technologies Corporation Sample block apparatus and method for retaining a microcard on a sample
US20050170314A1 (en) * 2002-11-27 2005-08-04 Richard Golden Dental pliers design with offsetting jaw and pad elements for assisting in removing upper and lower teeth and method for removing teeth utilizing the dental plier design
US8434341B2 (en) 2002-12-20 2013-05-07 Mattson Technology, Inc. Methods and systems for supporting a workpiece and for heat-treating the workpiece
US20040178553A1 (en) * 2002-12-20 2004-09-16 Camm David Malcolm Methods and systems for supporting a workpiece and for heat-treating the workpiece
US9627244B2 (en) 2002-12-20 2017-04-18 Mattson Technology, Inc. Methods and systems for supporting a workpiece and for heat-treating the workpiece
US20040140176A1 (en) * 2003-01-09 2004-07-22 Takaaki Inoue Convey device for a plate-like workpiece
US6968938B2 (en) * 2003-01-09 2005-11-29 Disco Corporation Convey device for a plate-like workpiece
US8366830B2 (en) * 2003-03-04 2013-02-05 Cree, Inc. Susceptor apparatus for inverted type MOCVD reactor
US20040175939A1 (en) * 2003-03-04 2004-09-09 Cree Lighting Company. Susceptor apparatus for inverted type MOCVD reactor
US20040187894A1 (en) * 2003-03-31 2004-09-30 Lam Research Corporation Wafer clamping apparatus and method for operating the same
US7357115B2 (en) * 2003-03-31 2008-04-15 Lam Research Corporation Wafer clamping apparatus and method for operating the same
US7403266B2 (en) * 2003-05-29 2008-07-22 Asml Holding N.V. Maskless lithography systems and methods utilizing spatial light modulator arrays
US20060114438A1 (en) * 2003-05-29 2006-06-01 Asml Holding N.V. Maskless lithography systems and methods utilizing spatial light modulator arrays
US20050046819A1 (en) * 2003-05-30 2005-03-03 Asml Holding N.V. Maskless lithography systems and methods utilizing spatial light modulator arrays
US7129731B2 (en) 2003-09-02 2006-10-31 Thermal Corp. Heat pipe with chilled liquid condenser system for burn-in testing
US20050067155A1 (en) * 2003-09-02 2005-03-31 Thayer John Gilbert Heat pipe evaporator with porous valve
US7143818B2 (en) 2003-09-02 2006-12-05 Thermal Corp. Heat pipe evaporator with porous valve
US20050067147A1 (en) * 2003-09-02 2005-03-31 Thayer John Gilbert Loop thermosyphon for cooling semiconductors during burn-in testing
US20050067146A1 (en) * 2003-09-02 2005-03-31 Thayer John Gilbert Two phase cooling system method for burn-in testing
US7013956B2 (en) 2003-09-02 2006-03-21 Thermal Corp. Heat pipe evaporator with porous valve
US20050068734A1 (en) * 2003-09-02 2005-03-31 Thayer John Gilbert Heat pipe with chilled liquid condenser system for burn-in testing
US8330935B2 (en) 2004-01-20 2012-12-11 Carl Zeiss Smt Gmbh Exposure apparatus and measuring device for a projection lens
US10345710B2 (en) 2004-01-20 2019-07-09 Carl Zeiss Smt Gmbh Microlithographic projection exposure apparatus and measuring device for a projection lens
US20100141912A1 (en) * 2004-01-20 2010-06-10 Carl Zeiss Smt Ag Exposure apparatus and measuring device for a projection lens
US9436095B2 (en) 2004-01-20 2016-09-06 Carl Zeiss Smt Gmbh Exposure apparatus and measuring device for a projection lens
US20080309894A1 (en) * 2004-01-20 2008-12-18 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus and measuring device for a projection lens
US10048602B2 (en) 2004-02-04 2018-08-14 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8605252B2 (en) 2004-02-04 2013-12-10 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US9316921B2 (en) 2004-02-04 2016-04-19 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8208119B2 (en) 2004-02-04 2012-06-26 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20080106707A1 (en) * 2004-02-04 2008-05-08 Nikon Corporation Exposure Apparatus, Exposure Method, and Method for Producing Device
US7532310B2 (en) * 2004-10-22 2009-05-12 Asml Netherlands B.V. Apparatus, method for supporting and/or thermally conditioning a substrate, a support table, and a chuck
EP1650604A3 (en) * 2004-10-22 2006-05-03 ASML Netherlands B.V. Apparatus and method for supporting and thermally conditioning a substrate, a support table, a chuck and a lithographic apparatus comprising said support table
US20060102849A1 (en) * 2004-10-22 2006-05-18 Asml Netherlands B.V. Apparatus, method for supporting and/or thermally conditioning a substrate, a support table, and a chuck
CN100390957C (en) * 2005-03-17 2008-05-28 东京毅力科创株式会社 Substrate supporting member and substrate processing apparatus
US20090115977A1 (en) * 2005-04-18 2009-05-07 Nikon Corporation Exposure Apparatus, Exposure Method, and Device Manufacturing Method
US8724077B2 (en) 2005-04-18 2014-05-13 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8089608B2 (en) 2005-04-18 2012-01-03 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US20090284730A1 (en) * 2005-07-06 2009-11-19 Asml Netherlands B.V. Substrate Handler, Lithographic Apparatus and Device Manufacturing Method
US8174680B2 (en) 2005-07-06 2012-05-08 Asml Netherlands B.V. Substrate handler, lithographic apparatus and device manufacturing method
US20070008512A1 (en) * 2005-07-06 2007-01-11 Asml Netherlands B.V. Substrate handler, lithographic apparatus and device manufacturing method
US7576835B2 (en) * 2005-07-06 2009-08-18 Asml Netherlands B.V. Substrate handler, lithographic apparatus and device manufacturing method
US20070040265A1 (en) * 2005-08-17 2007-02-22 Applied Materials, Inc. Substrate support having brazed plates and resistance heater
US7705275B2 (en) 2005-08-17 2010-04-27 Applied Materials, Inc. Substrate support having brazed plates and resistance heater
WO2007022471A3 (en) * 2005-08-17 2007-06-07 Applied Materials Inc Substrate support having brazed plates and heater
WO2007022471A2 (en) * 2005-08-17 2007-02-22 Applied Materials, Inc. Substrate support having brazed plates and heater
US7470919B2 (en) * 2005-09-30 2008-12-30 Applied Materials, Inc. Substrate support assembly with thermal isolating plate
US20070157886A1 (en) * 2005-09-30 2007-07-12 Applied Materials, Inc. Substrate support assembly with thermal isolating plate
US8003919B2 (en) * 2005-12-06 2011-08-23 Dainippon Screen Mfg. Co., Ltd. Substrate heat treatment apparatus
US20080278695A1 (en) * 2005-12-06 2008-11-13 Nikon Corporation Exposing method, exposure apparatus, and device fabricating method
US8243254B2 (en) 2005-12-06 2012-08-14 Nikon Corporation Exposing method, exposure apparatus, and device fabricating method
US8547520B2 (en) 2005-12-06 2013-10-01 Nikon Corporation Exposing method, exposure apparatus, and device fabricating method
US20070128888A1 (en) * 2005-12-06 2007-06-07 Shigehiro Goto Substrate heat treatment apparatus
US9810996B2 (en) 2006-05-09 2017-11-07 Carl Zeiss Smt Gmbh Optical imaging device with thermal attenuation
US8363206B2 (en) 2006-05-09 2013-01-29 Carl Zeiss Smt Gmbh Optical imaging device with thermal attenuation
US20090135385A1 (en) * 2006-05-09 2009-05-28 Carl Zeiss Smt Ag Optical imaging device with thermal attenuation
US8902401B2 (en) 2006-05-09 2014-12-02 Carl Zeiss Smt Gmbh Optical imaging device with thermal attenuation
US20080011737A1 (en) * 2006-06-07 2008-01-17 Tokyo Electron Limited Hot plate and process for producing the same
US8454356B2 (en) * 2006-11-15 2013-06-04 Mattson Technology, Inc. Systems and methods for supporting a workpiece during heat-treating
US20080157452A1 (en) * 2006-11-15 2008-07-03 Mattson Technology Canada, Inc. Systems and methods for supporting a workpiece during heat-treating
US8760621B2 (en) 2007-03-12 2014-06-24 Asml Netherlands B.V. Lithographic apparatus and method
US20080225244A1 (en) * 2007-03-12 2008-09-18 Asml Netherlands B.V. Lithographic apparatus and method
US20090279059A1 (en) * 2007-07-31 2009-11-12 Nikon Corporation Exposure apparatus adjusting method, exposure apparatus, and device fabricating method
US9025126B2 (en) 2007-07-31 2015-05-05 Nikon Corporation Exposure apparatus adjusting method, exposure apparatus, and device fabricating method
US8747948B2 (en) 2007-12-18 2014-06-10 Asm Genitech Korea Ltd. Deposition apparatus
US8092606B2 (en) 2007-12-18 2012-01-10 Asm Genitech Korea Ltd. Deposition apparatus
US20090156015A1 (en) * 2007-12-18 2009-06-18 Asm Genitech Korea Ltd. Deposition apparatus
US8696862B2 (en) * 2008-02-06 2014-04-15 Tokyo Electron Limited Substrate mounting table, substrate processing apparatus and substrate temperature control method
US20090194264A1 (en) * 2008-02-06 2009-08-06 Tokyo Electron Limited Substrate mounting table, substrate processing apparatus and substrate temperature control method
US9070590B2 (en) 2008-05-16 2015-06-30 Mattson Technology, Inc. Workpiece breakage prevention method and apparatus
US20110177624A1 (en) * 2008-05-16 2011-07-21 David Malcolm Camm Workpiece breakage prevention method and apparatus
US8801857B2 (en) 2008-10-31 2014-08-12 Asm America, Inc. Self-centering susceptor ring assembly
US11387137B2 (en) 2008-10-31 2022-07-12 Asm Ip Holding B.V. Self-centering susceptor ring assembly
US20100107973A1 (en) * 2008-10-31 2010-05-06 Asm America, Inc. Self-centering susceptor ring assembly
US20120146273A1 (en) * 2009-04-22 2012-06-14 Tiefenboeck Herbert Receiving device for receiving semiconductor substrates
US9278433B2 (en) * 2009-04-22 2016-03-08 Ev Group Gmbh Receiving device for receiving semiconductor substrates
CN102152969A (en) * 2009-12-28 2011-08-17 精工爱普生株式会社 Non-contact holder and non-contact holding hand
US20140118709A1 (en) * 2012-10-26 2014-05-01 Canon Kabushiki Kaisha Holding apparatus, lithography apparatus, and method of manufacturing article
US20140313493A1 (en) * 2013-04-18 2014-10-23 E I Du Pont De Nemours And Company Exposure apparatus and a method for exposing a photosensitive element and a method for preparing a printing form from the photosensitive element
USRE49066E1 (en) 2015-10-06 2022-05-10 Asml Holding N.V. Chucks and clamps for holding objects of a lithographic apparatus and methods for controlling a temperature of an object held by a clamp of a lithographic apparatus
US20180022044A1 (en) * 2016-07-19 2018-01-25 General Electric Company Retaining plates and disposable build plates for additive manufacturing systems
US10377126B2 (en) * 2016-07-19 2019-08-13 General Electric Company Retaining plates and disposable build plates for additive manufacturing systems
USD920936S1 (en) 2019-01-17 2021-06-01 Asm Ip Holding B.V. Higher temperature vented susceptor
USD914620S1 (en) 2019-01-17 2021-03-30 Asm Ip Holding B.V. Vented susceptor
USD958764S1 (en) 2019-01-17 2022-07-26 Asm Ip Holding B.V. Higher temperature vented susceptor
US11404302B2 (en) 2019-05-22 2022-08-02 Asm Ip Holding B.V. Substrate susceptor using edge purging
US11764101B2 (en) 2019-10-24 2023-09-19 ASM IP Holding, B.V. Susceptor for semiconductor substrate processing

Similar Documents

Publication Publication Date Title
US5738165A (en) Substrate holding apparatus
US5220171A (en) Wafer holding device in an exposure apparatus
US6098408A (en) System for controlling reflection reticle temperature in microlithography
TWI242697B (en) Lithographic apparatus and device manufacturing method
JP3695000B2 (en) Exposure method and exposure apparatus
KR100706072B1 (en) Lithographic apparatus and device manufacturing method
KR100705497B1 (en) Apparatus, method for supporting and/or thermally conditioning a substrate, a support table, and a chuck
TWI420258B (en) Lithographic apparatus and device manufacturing method
TWI443478B (en) Lithographic apparatus and device manufacturing method
US7191599B2 (en) Cooling apparatus and method, and exposure apparatus having the cooling apparatus
KR101381265B1 (en) Lithographic apparatus and removable member
KR20010067473A (en) Euv reticle thermal management
TWI421644B (en) Lithographic apparatus and method
JP2001244196A (en) Lithography projection system with temperature- controlled heat shield
JPH0992613A (en) Temperature conditioner and scanning aligner
JP2000036449A (en) Aligner
US6753942B2 (en) Environmental control chamber
US6191843B1 (en) Exposure device, method of making and using same, and objects exposed by the exposure device
US20100186942A1 (en) Reticle error reduction by cooling
JP2004080025A (en) Cooling device and method therefor, and aligner therewith
JP3291832B2 (en) Substrate holding member and exposure apparatus
JP3286994B2 (en) Exposure method and exposure apparatus
US7652747B2 (en) Immersion exposure method and immersion exposure apparatus which transfer image of pattern formed on mask onto substrate through immersion medium
JP3214494B2 (en) Holder and exposure system, device
JPH11135407A (en) Method for exposure and aligner

Legal Events

Date Code Title Description
FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

REMI Maintenance fee reminder mailed
LAPS Lapse for failure to pay maintenance fees
LAPS Lapse for failure to pay maintenance fees

Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Lapsed due to failure to pay maintenance fee

Effective date: 20100414