US5762536A - Sensors for a linear polisher - Google Patents
Sensors for a linear polisher Download PDFInfo
- Publication number
- US5762536A US5762536A US08/797,470 US79747097A US5762536A US 5762536 A US5762536 A US 5762536A US 79747097 A US79747097 A US 79747097A US 5762536 A US5762536 A US 5762536A
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- United States
- Prior art keywords
- platen
- pad
- fluid
- polishing
- sensors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
- B24B21/04—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
- B24B21/04—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces
- B24B21/06—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces involving members with limited contact area pressing the belt against the work, e.g. shoes sweeping across the whole area to be ground
- B24B21/08—Pressure shoes; Pressure members, e.g. backing belts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
Definitions
- the present invention relates to the field of semiconductor wafer processing and, more particularly, to the polishing of semiconductor wafers utilizing a linear polisher.
- CMP chemical mechanical polishing
- CMP is a technique in which a chemical slurry is used along with a polishing pad to polish away materials on a semiconductor wafer.
- a substrate is mounted on a polishing head which rotates against a polishing pad placed on a rotating table (see, for example, U.S. Pat. No. 5,329,732).
- the mechanical force for polishing is derived from the rotating table speed and the downward force on the head.
- the chemical slurry is constantly transferred under the polishing head. Rotation of the polishing head helps in the slurry delivery as well in averaging the polishing rates across the substrate surface.
- a linear polisher Instead of a rotating pad, a moving belt is used to linearly move the pad across the wafer surface. The wafer is still rotated for averaging out the local variations, but the global planarity is improved over CMP tools using rotating pads.
- a linear polisher is described in the afore-mentioned parent application.
- linear polishers are capable of using flexible belts, upon which the pad is disposed. This flexibility allows the belt to flex, which can cause a change in the pad pressure being exerted on the wafer. When this flexibility can be controlled, it provides a mechanism for controlling the polishing rate and/or the profile.
- a fluid platen can be readily utilized to control the pad pressure being exerted on a wafer at various locations along the wafer surface. Examples of fluid platens are disclosed in the afore-mentioned related applications and in U.S. Pat. No. 5,558,568.
- fluid platens are utilized or not utilized, it is desirable to control or at least monitor the polishing process during the actual polishing process.
- Prior art techniques typically rely on past performance to estimate the current process, rely on some form of end-point detection for terminating the polishing process or the process is stopped intermittently to evaluate the process. It would be advantageous to provide some form of monitoring during the actual polishing process so that an in-situ measurement can be obtained while the polishing is on-going. It would also be advantageous to utilize such measurements to provide in-situ adjustments during the polishing process.
- the present invention provides for such a monitoring scheme.
- the present invention describes a technique for utilizing sensors to monitor a polishing characteristic of a substrate, such as a wafer, during polishing.
- a linear polisher which employs a fluid platen, is utilized to perform chemical-mechanical polishing on a semiconductor wafer.
- the sensors are distributed along the surface or are coupled to openings along the surface to determine a polishing characteristic of the polishing pad relative to the wafer surface.
- proximity sensors are used at or coupled to various sensing locations along the surface of the platen to measure the proximity of the overlying belt/pad assembly with respect to the platen.
- the sensed proximity values provide information as to the gap separating the belt/pad from the platen when a fluid platen is used.
- sensors are used to sense the actual force being exerted at the corresponding locations.
- a pressure sensor is used to measure the pressure of a fluid distributed along the surface of a fluid platen.
- the measured values from the sensors are utilized to provide useful polishing information during use, as well as providing constant feedback to provide in-situ adjustments of the polishing process.
- the adjustments can be in the manner of controlling the localized areas associated with a given sensor or providing an averaging value for the overall cross-section of the surface.
- FIG. 1 is a pictorial illustration of a linear polisher for practicing the present invention.
- FIG. 2 is a cross-sectional diagram of a portion of the linear polisher of FIG. 1 and showing the inclusion of a number of sensor input locations for sensors of the present invention in a wafer support platen disposed underlying a belt/pad assembly.
- FIG. 3 is a top plan view of the wafer support platen of FIG. 2, in which the sensing locations are shown distributed at various locations across the surface of the platen.
- FIG. 4 is a cross-sectional diagram of the wafer support platen when proximity sensors are employed within the platen to measure the separation between the platen surface and the belt/pad assembly.
- FIG. 5 is a cross-sectional diagram of the wafer support platen when the platen is used as a fluid platen, in which channels are disposed within the platen to couple dispensed fluid to sensors to measure fluid pressure at corresponding sensing locations.
- FIG. 6 is a block schematic diagram of a polishing tool incorporating the sensors in a fluid platen and in which automated feedback adjustment control is utilized in response to sensor measurements to compensate for variations in the polishing performance.
- the present invention is described in reference to performing CMP on a semiconductor wafer (more so to a silicon semiconductor wafer), the invention can be readily adapted to polish other materials as well, such as glass, metal substrates or other semiconductor substrates, including substrates for use in manufacturing flat panel displays.
- FIG. 1 a linear polisher 10 for use in practicing the present invention is shown.
- FIG. 2 shows a cross-section of a portion of the polisher 10.
- the linear polisher 10 is utilized in polishing a semiconductor wafer 11, such as a silicon wafer, to polish away materials on the surface of the wafer.
- the material being removed can be the substrate material of the wafer itself or one of the layers formed on the substrate.
- Such formed layers include dielectric materials (such as silicon dioxide), metals (such as aluminum, copper or tungsten) and alloys, or semiconductor materials (such as silicon or polysilicon).
- CMP chemical-mechanical polishing
- the art of performing CMP to polish away layers on a wafer is known and prevalent practice has been to perform CMP by subjecting the surface of the wafer to a rotating platform (or platen) containing a pad (see for example, the Background section above).
- the linear polisher 10 utilizes a belt 12, which moves linearly in respect to the surface of the wafer 11.
- the belt 12 is a continuous belt rotating about rollers (or spindles) 13 and 14, in which one roller or both is/are driven by a driving means, such as a motor, so that the rotational motion of the rollers 13-14 causes the belt 12 to be driven in a linear motion (as shown by arrow 16) with respect to the wafer 11.
- a polishing pad 15 is affixed onto the belt 12 at its outer surface facing the wafer 11.
- the belt/pad assembly is made to move linearly to polish the wafer 11.
- the wafer 11 typically resides within a wafer carrier 17, which is part of a housing 18.
- the wafer 11 is held in position by a mechanical retaining means, such as a retainer ring 19, and/or by the use of vacuum.
- a mechanical retaining means such as a retainer ring 19, and/or by the use of vacuum.
- the wafer 11 is rotated, while the belt/pad moves in a linear direction 16 to polish the wafer 11.
- the linear polisher 10 also includes a slurry dispensing mechanism 20, which dispenses a slurry 21 onto the pad 15.
- a pad conditioner (not shown in the drawings) is typically used in order to recondition the pad 15 during use. Techniques for reconditioning the pad 15 during use are known in the art and generally require a constant scratching of the pad in order to remove the residue build-up caused by the used slurry and removed waste material.
- a platen 25 is disposed on the underside of belt 12 and opposite from carrier 17, such that the belt/pad assembly resides between platen 25 and wafer 11 (which illustration is more clearly shown in FIG. 2).
- a primary purpose of platen 25 is to provide a supporting platform on the underside of the belt 12 to ensure that the pad 15 makes sufficient contact with wafer 11 for uniform polishing.
- the carrier 17 is pressed downward against the belt 12 and pad 15 with appropriate force, so that the pad 15 makes sufficient contact with the wafer 11 for performing CMP. Since the belt 12 is flexible and will depress when the wafer is pressed downward onto the pad 15, platen 25 provides a necessary counteracting support to this downward force (also referred to as downforce).
- Platen 25 can be a solid platform or it can be a fluid platen (also referred to as a fluid bearing). The preference is to have a fluid platen, so that the fluid flow from the platen can be used to control forces exerted to the underside of the belt 12. By such fluid flow control, pressure variations exerted by the pad on the wafer can be adjusted to provide a more uniform polishing rate of the wafer. Examples of fluid platens are disclosed in the afore-mentioned parent related applications and in U.S. Pat. No. 5,558,568.
- the monitoring of the polishing performance for a linear polisher using a fluid platen is more advantageous, since the monitoring data can be used to adjust the fluid pressure at varying locations of the platen to provide in-situ corrections during the polishing process.
- the present invention describes a scheme of providing sensors to monitor the polishing process.
- the platen 25 incorporates a number of sensors.
- the sensors can be located at the sensing points along the surface of the platen or they can be located elsewhere (even away from the platen itself), in which instance such sensors are coupled to sensing input locations along the surface of the platen.
- the sensing locations 27 are shown disposed along the surface of the platen 25 to monitor a parameter of the polishing medium relative to the surface of the wafer 11.
- the polishing medium in this instance includes the belt/pad assembly and the slurry, which is made to flow over the pad surface.
- the sensors employed can measure a variety of parameters which can provide information related to the polishing profile of the wafer surface.
- sensors are utilized to measure the proximity of the underside of the belt 12 relative to the platen 25. In another embodiment, sensors are used to measure the pressure exerted onto the fluid flowing between the platen and the underside of the belt 12, when a fluid platen is utilized.
- FIG. 3 an example for platen 25 is shown in which five sensor input locations 27 are disposed along the surface.
- One sensor input location 27 is disposed at the center and one each spaced 90 degrees apart along a concentric circle of a predetermined radius.
- the five sensor inputs essentially measure the center location and four quadrant locations of the platen surface. It is appreciated that the number and/or the location of the sensing locations is a design choice.
- Five sensing locations 27 are utilized in the example, since a representative sampling can be obtained across the surface of the platen 25. As will be noted below, the five sensed values will be used also to obtain an average value across the wafer surface.
- the sensing inputs are utilized to measure and determine the gap separation between the belt and the platen and/or the pressure exerted by the pad/belt onto the platen.
- the region underlying the pad or the belt upon which the pad is mounted
- the polishing profile of the wafer surface may not be uniform or may not fit a desired polishing profile for a given polishing process.
- a way of making adjustments to bring the process under tolerance during the actual polishing process is to monitor the gap separation between the platen and the belt and/or the pressure being exerted on the platen (or the fluid when fluid platens are used).
- the monitoring can be done at various locations along the platen surface during the polishing process, as exemplified by sensing locations 27 in FIG. 3.
- the sensors of the present invention will provide in-situ monitoring during the polishing process. Although a variety of sensors can be used to monitor the gap or the pressure, the two preferred techniques are described herein.
- the platen 25 incorporates proximity sensors 28 to measure the separation between each sensor 28 and the underside of the belt 12 at each sensing location 27.
- the proximity sensors 28, as shown, are disposed within openings (or cavities) formed within platen 25 along the platen surface so that the sensor is substantially flush with the platen surface.
- Each proximity sensor 28 measures the gap separating the sensor and the belt.
- An example of such a gap sensor is a Linear Proximity Sensor, Model Type E2CA, manufactured by Omron Corporation.
- proximity sensor used is a design choice.
- inductive sensors can be used when stainless steel (or other metallic material) is used for the belt 12.
- Optical sensors can be used for both metallic and non-metallic belts.
- Each proximity sensor 28 measures the gap separation between it and the underside of the belt/pad assembly. Through experimentation, ideal gap distances at various sensor locations are determined for each type of linear polisher system to achieve a uniform rate of polish across the wafer surface. Once these values are determined for a system, the sensors can be used to adjust various parameters to obtain or assist in obtaining the desired polishing profile.
- each sensing location 27 can be associated to a corresponding fluid dispenser or dispensers. It is appreciated that each sensing location can be associated with one or more fluid dispensing channels, so that monitored data can be used as feedback to control the appropriate dispenser(s). It is also appreciated that the present invention can be made to operate where there may not be one-to-one correspondence with a corresponding fluid dispenser.
- the information corresponds to the thickness of the fluid residing between the platen 25 and the belt 12 at the particular sensor location 27. That is, the fluid thickness is equivalent to the gap distance. Typically, the fluid thickness is in the range of 2-7 mils, however, the actual thickness can vary outside of this range. When the gap separation is zero, the belt is making contact with the platen surface, indicating that there is no longer a fluid presence at that sensed location.
- the gap separation information can be used to identify locations where the fluid thickness locations are out of tolerance. Accordingly, gap information can be used to identify wear on the system (such as the belt), gimbaling or improper gimbaling of the wafer, or improper positioning of the wafer carrier.
- the corresponding fluid dispenser associated with the area of the surface being monitored by that sensor can be adjusted in order to bring the gap distance back into tolerance.
- the sensor inputs can be combined to provide an average value of the gap.
- the five sensed readings are averaged to obtain an average gap distance.
- This average value identifies an average fluid thickness on the surface of the platen.
- the fluid dispensers can be adjusted to increase or decrease the average thickness of the fluid.
- the average value can be used to adjust the average downforce as well.
- the preference is to adjust the fluid flow onto the fluid platen.
- in-situ adjustments can be made during operation of the linear polisher by adjusting the fluid flow onto the fluid platen and/or, in some instance, the downforce exerted by the wafer carrier.
- FIG. 5 Another equivalent monitoring scheme is shown in an alternative embodiment of FIG. 5. Again, fluid dispensing openings and channels are not shown, but it is appreciated that such fluid dispensing schemes are present when fluid platens are utilized.
- sensors are shown not mounted directly in the platen itself at sensing locations 27 (although they could be). Instead, sense openings 30 are formed on the surface of the platen 25. Each of the openings actually forms a channel 31 through the platen 25, which openings 30 can have a pattern equivalent to the sensing locations earlier described.
- the other end of each channel 31 is coupled to a pressure sensor 29, which in this instance is a pressure indicator.
- the fluid flow onto a fluid platen disperses along the surface of the platen 25. Since the belt 12 is within close proximity of the platen surface, the area between the platen 25 and the underside of the belt 12 is also filled with the fluid. The fluid will also flow into openings 30 and fill channels 31 (and any associated coupling lines to sensor 29).
- the variations in the force exerted at a particular location during polishing will cause an increase (or decrease) in the pressure being exerted onto the fluid at that location.
- the increase (or decrease) in the fluid pressure will also occur to the fluid in the channel 31 for the opening 30 in close proximity.
- the fluid pressure variation is sensed and measured by the corresponding pressure sensor 29.
- sensors 29 detect fluid pressure variations of fluid platens corresponding to its sensing location 27.
- the outputs from the sensors 29 are used to adjust corresponding fluid dispensing controls of a fluid platen. Individual adjustments can be made for each sensor 29 when a particular sensor senses an out-of-tolerance condition. Furthermore, the sensor outputs can be combined to provide an average value, as was noted earlier with the gap sensors. Since the pressure is more directly associated with the downforce being exerted by the wafer onto the pad, the average pressure value provides information about the average downforce being exerted by the wafer carrier. When the average pressure value is out of tolerance, the fluid flow can be adjusted to compensate. Alternatively (or in conjunction) the downforce of the wafer carrier can be adjusted to bring the average value back into tolerance. Thus, the pressure sensors allow for a means of adjusting the wafer downforce.
- the outputs from the sensors can be coupled to a processor, which is shown as a central processing unit (CPU) 35.
- the CPU 35 processes the sensor inputs and generates signals to a fluid dispensing control unit 36, which adjusts the appropriate fluid dispenser(s).
- a fluid dispensing control unit 36 which adjusts the appropriate fluid dispenser(s).
- the various techniques for providing fluid platens with separate flow adjustment control are described in the afore-mentioned references, including the parent application.
- the CPU 35 receives the sensed information from the sensors and issues commands to the fluid dispensing control unit 36 to adjust the fluid pressure(s) to compensate the individual fluid dispensers or, if the averaging technique is used, to obtain the desired average profile.
- the CPU 35 can be used to send a control signal to a wafer downforce control unit 37 to adjust the downforce being exerted by the carrier 17 in pressing the wafer 11 down onto the pad 15.
- the sensors of the present invention are described in reference to a linear polisher, however, the sensors can be adapted for use on other tools, including the rotating polishers well know in the art for performing CMP.
- the sensing schemes of the present invention can be used with non-fluid platens as well. For example, when non-fluid (or standard) platens are used, the gap separation between the platen and the belt is generally zero. The belt essentially rides on the platen. In this instance, strain gauges can be disposed at the various locations 27 so that each of the gauges will sense the pressure being exerted by the belt onto the platen. The measured values can be averaged to provide the downforce adjustment as noted earlier.
- the measured values from the sensors are utilized to provide useful polishing information during polishing, as well as providing constant feedback to provide in-situ adjustment of the polishing process.
- the adjustments can be in the manner of adjusting the localized areas associated with a given sensor or providing an averaging value for the overall cross-section of the surface.
- the two techniques described herein utilize proximity sensing and pressure sensing, but it is appreciated that other sensing techniques can be readily used without departing from the spirit and scope of the present invention.
Abstract
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Priority Applications (1)
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US08/797,470 US5762536A (en) | 1996-04-26 | 1997-02-06 | Sensors for a linear polisher |
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US63846296A | 1996-04-26 | 1996-04-26 | |
US08/797,470 US5762536A (en) | 1996-04-26 | 1997-02-06 | Sensors for a linear polisher |
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US63846296A Continuation-In-Part | 1996-04-26 | 1996-04-26 |
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US5762536A true US5762536A (en) | 1998-06-09 |
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Cited By (89)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0920956A2 (en) * | 1997-11-05 | 1999-06-09 | Aplex, Inc. | Polishing apparatus and method |
US5913713A (en) * | 1997-07-31 | 1999-06-22 | International Business Machines Corporation | CMP polishing pad backside modifications for advantageous polishing results |
US5934974A (en) * | 1997-11-05 | 1999-08-10 | Aplex Group | In-situ monitoring of polishing pad wear |
US5957764A (en) * | 1997-11-05 | 1999-09-28 | Aplex, Inc. | Modular wafer polishing apparatus and method |
US6000997A (en) * | 1998-07-10 | 1999-12-14 | Aplex, Inc. | Temperature regulation in a CMP process |
US6042454A (en) * | 1997-06-04 | 2000-03-28 | Ebara Corporation | System for detecting the endpoint of the polishing of a semiconductor wafer by a semiconductor wafer polisher |
WO2000025982A1 (en) * | 1998-10-29 | 2000-05-11 | Lam Research Corporation | Apparatus and method for performing end point detection on a linear planarization tool |
WO2000025983A1 (en) * | 1998-10-29 | 2000-05-11 | Lam Research Corporation | Use of zeta potential during chemical mechanical polishing for end point detection |
US6062961A (en) * | 1997-11-05 | 2000-05-16 | Aplex, Inc. | Wafer polishing head drive |
US6062959A (en) * | 1997-11-05 | 2000-05-16 | Aplex Group | Polishing system including a hydrostatic fluid bearing support |
US6068539A (en) * | 1998-03-10 | 2000-05-30 | Lam Research Corporation | Wafer polishing device with movable window |
US6071818A (en) * | 1998-06-30 | 2000-06-06 | Lsi Logic Corporation | Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material |
US6074517A (en) * | 1998-07-08 | 2000-06-13 | Lsi Logic Corporation | Method and apparatus for detecting an endpoint polishing layer by transmitting infrared light signals through a semiconductor wafer |
US6074287A (en) * | 1996-04-12 | 2000-06-13 | Nikon Corporation | Semiconductor wafer polishing apparatus |
US6077783A (en) * | 1998-06-30 | 2000-06-20 | Lsi Logic Corporation | Method and apparatus for detecting a polishing endpoint based upon heat conducted through a semiconductor wafer |
US6080670A (en) * | 1998-08-10 | 2000-06-27 | Lsi Logic Corporation | Method of detecting a polishing endpoint layer of a semiconductor wafer which includes a non-reactive reporting specie |
US6108091A (en) * | 1997-05-28 | 2000-08-22 | Lam Research Corporation | Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing |
US6111634A (en) * | 1997-05-28 | 2000-08-29 | Lam Research Corporation | Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing |
US6117779A (en) * | 1998-12-15 | 2000-09-12 | Lsi Logic Corporation | Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint |
US6121147A (en) * | 1998-12-11 | 2000-09-19 | Lsi Logic Corporation | Apparatus and method of detecting a polishing endpoint layer of a semiconductor wafer which includes a metallic reporting substance |
US6126527A (en) * | 1998-07-10 | 2000-10-03 | Aplex Inc. | Seal for polishing belt center support having a single movable sealed cavity |
US6135859A (en) * | 1999-04-30 | 2000-10-24 | Applied Materials, Inc. | Chemical mechanical polishing with a polishing sheet and a support sheet |
US6143123A (en) * | 1996-11-06 | 2000-11-07 | Micron Technology, Inc. | Chemical-mechanical planarization machine and method for uniformly planarizing semiconductor wafers |
US6146248A (en) * | 1997-05-28 | 2000-11-14 | Lam Research Corporation | Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher |
US6152808A (en) * | 1998-08-25 | 2000-11-28 | Micron Technology, Inc. | Microelectronic substrate polishing systems, semiconductor wafer polishing systems, methods of polishing microelectronic substrates, and methods of polishing wafers |
US6179709B1 (en) | 1999-02-04 | 2001-01-30 | Applied Materials, Inc. | In-situ monitoring of linear substrate polishing operations |
US6201253B1 (en) | 1998-10-22 | 2001-03-13 | Lsi Logic Corporation | Method and apparatus for detecting a planarized outer layer of a semiconductor wafer with a confocal optical system |
US6217427B1 (en) * | 1999-04-06 | 2001-04-17 | Agere Systems Inc. | Mobius strip belt for linear CMP tools |
US6224461B1 (en) | 1999-03-29 | 2001-05-01 | Lam Research Corporation | Method and apparatus for stabilizing the process temperature during chemical mechanical polishing |
US6241583B1 (en) | 1999-02-04 | 2001-06-05 | Applied Materials, Inc. | Chemical mechanical polishing with a plurality of polishing sheets |
US6241847B1 (en) | 1998-06-30 | 2001-06-05 | Lsi Logic Corporation | Method and apparatus for detecting a polishing endpoint based upon infrared signals |
US6244935B1 (en) | 1999-02-04 | 2001-06-12 | Applied Materials, Inc. | Apparatus and methods for chemical mechanical polishing with an advanceable polishing sheet |
US6261959B1 (en) | 2000-03-31 | 2001-07-17 | Lam Research Corporation | Method and apparatus for chemically-mechanically polishing semiconductor wafers |
US6260272B1 (en) * | 1997-06-16 | 2001-07-17 | Brother Kogyo Kabushiki Kaisha | Method of manufacturing nozzle plate of inkjet printer head |
US6268224B1 (en) | 1998-06-30 | 2001-07-31 | Lsi Logic Corporation | Method and apparatus for detecting an ion-implanted polishing endpoint layer within a semiconductor wafer |
US6285035B1 (en) | 1998-07-08 | 2001-09-04 | Lsi Logic Corporation | Apparatus for detecting an endpoint polishing layer of a semiconductor wafer having a wafer carrier with independent concentric sub-carriers and associated method |
US6293139B1 (en) * | 1999-11-03 | 2001-09-25 | Memc Electronic Materials, Inc. | Method of determining performance characteristics of polishing pads |
US6328642B1 (en) | 1997-02-14 | 2001-12-11 | Lam Research Corporation | Integrated pad and belt for chemical mechanical polishing |
WO2001094076A1 (en) * | 2000-06-08 | 2001-12-13 | Honeywell International Inc. | Chemical-hydrodynamic etch planarization |
US6361414B1 (en) | 2000-06-30 | 2002-03-26 | Lam Research Corporation | Apparatus and method for conditioning a fixed abrasive polishing pad in a chemical mechanical planarization process |
US6379216B1 (en) * | 1999-10-22 | 2002-04-30 | Advanced Micro Devices, Inc. | Rotary chemical-mechanical polishing apparatus employing multiple fluid-bearing platens for semiconductor fabrication |
US6419559B1 (en) | 2000-07-10 | 2002-07-16 | Applied Materials, Inc. | Using a purge gas in a chemical mechanical polishing apparatus with an incrementally advanceable polishing sheet |
US6428394B1 (en) | 2000-03-31 | 2002-08-06 | Lam Research Corporation | Method and apparatus for chemical mechanical planarization and polishing of semiconductor wafers using a continuous polishing member feed |
US6435952B1 (en) | 2000-06-30 | 2002-08-20 | Lam Research Corporation | Apparatus and method for qualifying a chemical mechanical planarization process |
US6451699B1 (en) | 1999-07-30 | 2002-09-17 | Lsi Logic Corporation | Method and apparatus for planarizing a wafer surface of a semiconductor wafer having an elevated portion extending therefrom |
US6475070B1 (en) | 1999-02-04 | 2002-11-05 | Applied Materials, Inc. | Chemical mechanical polishing with a moving polishing sheet |
US6491570B1 (en) | 1999-02-25 | 2002-12-10 | Applied Materials, Inc. | Polishing media stabilizer |
US20020185223A1 (en) * | 2001-06-07 | 2002-12-12 | Lam Research Corporation | Apparatus and method for conditioning polishing pad in a chemical mechanical planarization process |
US6495464B1 (en) | 2000-06-30 | 2002-12-17 | Lam Research Corporation | Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool |
US6500056B1 (en) | 2000-06-30 | 2002-12-31 | Lam Research Corporation | Linear reciprocating disposable belt polishing method and apparatus |
US6503131B1 (en) | 2001-08-16 | 2003-01-07 | Applied Materials, Inc. | Integrated platen assembly for a chemical mechanical planarization system |
US6520841B2 (en) | 2000-07-10 | 2003-02-18 | Applied Materials, Inc. | Apparatus and methods for chemical mechanical polishing with an incrementally advanceable polishing sheet |
US6520834B1 (en) * | 2000-08-09 | 2003-02-18 | Micron Technology, Inc. | Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates |
US6554688B2 (en) * | 2001-01-04 | 2003-04-29 | Lam Research Corporation | Method and apparatus for conditioning a polishing pad with sonic energy |
US6568991B2 (en) * | 2001-08-28 | 2003-05-27 | Speedfam-Ipec Corporation | Method and apparatus for sensing a wafer in a carrier |
US6592439B1 (en) | 2000-11-10 | 2003-07-15 | Applied Materials, Inc. | Platen for retaining polishing material |
US20030139115A1 (en) * | 2001-12-27 | 2003-07-24 | Lam Research Corporation | Method and apparatus for applying downward force on wafer during CMP |
US20030153245A1 (en) * | 2002-01-17 | 2003-08-14 | Homayoun Talieh | Advanced chemical mechanical polishing system with smart endpoint detection |
US6609961B2 (en) | 2001-01-09 | 2003-08-26 | Lam Research Corporation | Chemical mechanical planarization belt assembly and method of assembly |
US6616801B1 (en) | 2000-03-31 | 2003-09-09 | Lam Research Corporation | Method and apparatus for fixed-abrasive substrate manufacturing and wafer polishing in a single process path |
US20030171069A1 (en) * | 2000-08-29 | 2003-09-11 | Applied Materials, Inc. | Web lift system for chemical mechanical planarization |
WO2003074228A1 (en) * | 2002-01-17 | 2003-09-12 | Nutool, Inc. | Advanced chemical mechanical polishing system with smart endpoint detection |
US6626744B1 (en) | 1999-12-17 | 2003-09-30 | Applied Materials, Inc. | Planarization system with multiple polishing pads |
US6626743B1 (en) * | 2000-03-31 | 2003-09-30 | Lam Research Corporation | Method and apparatus for conditioning a polishing pad |
US6645052B2 (en) | 2001-10-26 | 2003-11-11 | Lam Research Corporation | Method and apparatus for controlling CMP pad surface finish |
US20040023607A1 (en) * | 2002-03-13 | 2004-02-05 | Homayoun Talieh | Method and apparatus for integrated chemical mechanical polishing of copper and barrier layers |
US20040029489A1 (en) * | 2000-06-30 | 2004-02-12 | Manabu Tsujimura | Polishing apparatus |
US20040033759A1 (en) * | 2002-08-14 | 2004-02-19 | Schultz Stephen C. | Platen and manifold for polishing workpieces |
US6722950B1 (en) | 2000-11-07 | 2004-04-20 | Planar Labs Corporation | Method and apparatus for electrodialytic chemical mechanical polishing and deposition |
US6752698B1 (en) | 2001-03-19 | 2004-06-22 | Lam Research Corporation | Method and apparatus for conditioning fixed-abrasive polishing pads |
US6752693B1 (en) * | 2002-07-26 | 2004-06-22 | Lam Research Corporation | Afferent-based polishing media for chemical mechanical planarization |
US6773337B1 (en) | 2000-11-07 | 2004-08-10 | Planar Labs Corporation | Method and apparatus to recondition an ion exchange polish pad |
US20040214508A1 (en) * | 2002-06-28 | 2004-10-28 | Lam Research Corporation | Apparatus and method for controlling film thickness in a chemical mechanical planarization system |
US20040219867A1 (en) * | 2002-06-28 | 2004-11-04 | Lam Research Corporation | Apparatus and method for controlling fluid material composition on a polishing pad |
US20040235393A1 (en) * | 2003-05-21 | 2004-11-25 | Kazuto Hirokawa | Substrate polishing apparatus |
US20050006208A1 (en) * | 2003-07-11 | 2005-01-13 | Richard Armstrong | Single sensor press system |
US6857947B2 (en) | 2002-01-17 | 2005-02-22 | Asm Nutool, Inc | Advanced chemical mechanical polishing system with smart endpoint detection |
US6875091B2 (en) * | 2001-01-04 | 2005-04-05 | Lam Research Corporation | Method and apparatus for conditioning a polishing pad with sonic energy |
US6875085B2 (en) | 1998-11-06 | 2005-04-05 | Mosel Vitelic, Inc. | Polishing system including a hydrostatic fluid bearing support |
US6905526B1 (en) | 2000-11-07 | 2005-06-14 | Planar Labs Corporation | Fabrication of an ion exchange polish pad |
US6913518B2 (en) | 2003-05-06 | 2005-07-05 | Applied Materials, Inc. | Profile control platen |
US6942546B2 (en) | 2002-01-17 | 2005-09-13 | Asm Nutool, Inc. | Endpoint detection for non-transparent polishing member |
US7018273B1 (en) | 2003-06-27 | 2006-03-28 | Lam Research Corporation | Platen with diaphragm and method for optimizing wafer polishing |
US7153182B1 (en) | 2004-09-30 | 2006-12-26 | Lam Research Corporation | System and method for in situ characterization and maintenance of polishing pad smoothness in chemical mechanical polishing |
US7751609B1 (en) | 2000-04-20 | 2010-07-06 | Lsi Logic Corporation | Determination of film thickness during chemical mechanical polishing |
US20110106292A1 (en) * | 2009-11-05 | 2011-05-05 | Cone Michael | Method and System for Measuring the Dynamic Response of a Structure During a Machining Process |
US20170348819A1 (en) * | 2016-06-02 | 2017-12-07 | Semiconductor Manufacturing International (Shanghai) Corporation | Chemical mechanical polishing (cmp) apparatus and method |
DE202017105160U1 (en) | 2017-05-18 | 2018-08-22 | Steinemann Technology Ag | Belt grinding device for monitoring an abrasive belt |
CN113182988A (en) * | 2021-05-25 | 2021-07-30 | 陈思源 | High-precision flexible quantitative polishing machine and polishing method |
Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1493779A (en) * | 1921-02-28 | 1924-05-13 | Oliver Machinery Co | Pneumatic sanding pad |
US3363366A (en) * | 1965-06-30 | 1968-01-16 | Barnes Drill Co | Abrading machine |
US3727350A (en) * | 1971-11-16 | 1973-04-17 | Sundstrand Engelberg | Contour grinder |
US3801239A (en) * | 1972-04-03 | 1974-04-02 | Eaton Corp | Controller for fluid operated device |
US4793895A (en) * | 1988-01-25 | 1988-12-27 | Ibm Corporation | In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection |
US5036015A (en) * | 1990-09-24 | 1991-07-30 | Micron Technology, Inc. | Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers |
US5081421A (en) * | 1990-05-01 | 1992-01-14 | At&T Bell Laboratories | In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection |
US5081796A (en) * | 1990-08-06 | 1992-01-21 | Micron Technology, Inc. | Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer |
US5213655A (en) * | 1990-05-16 | 1993-05-25 | International Business Machines Corporation | Device and method for detecting an end point in polishing operation |
US5240552A (en) * | 1991-12-11 | 1993-08-31 | Micron Technology, Inc. | Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection |
US5308438A (en) * | 1992-01-30 | 1994-05-03 | International Business Machines Corporation | Endpoint detection apparatus and method for chemical/mechanical polishing |
US5321304A (en) * | 1992-07-10 | 1994-06-14 | Lsi Logic Corporation | Detecting the endpoint of chem-mech polishing, and resulting semiconductor device |
US5431592A (en) * | 1992-11-16 | 1995-07-11 | Fuji Photo Film Co., Ltd. | Method and apparatus for burnishing magnetic disks |
US5433651A (en) * | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
US5558568A (en) * | 1994-10-11 | 1996-09-24 | Ontrak Systems, Inc. | Wafer polishing machine with fluid bearings |
EP0738561A1 (en) * | 1995-03-28 | 1996-10-23 | Applied Materials, Inc. | Apparatus and method for in-situ endpoint detection and monitoring for chemical mechanical polishing operations |
US5569063A (en) * | 1994-08-05 | 1996-10-29 | Nihon Micro Coating Co., Ltd. | Polishing apparatus |
-
1997
- 1997-02-06 US US08/797,470 patent/US5762536A/en not_active Expired - Fee Related
Patent Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1493779A (en) * | 1921-02-28 | 1924-05-13 | Oliver Machinery Co | Pneumatic sanding pad |
US3363366A (en) * | 1965-06-30 | 1968-01-16 | Barnes Drill Co | Abrading machine |
US3727350A (en) * | 1971-11-16 | 1973-04-17 | Sundstrand Engelberg | Contour grinder |
US3801239A (en) * | 1972-04-03 | 1974-04-02 | Eaton Corp | Controller for fluid operated device |
US4793895A (en) * | 1988-01-25 | 1988-12-27 | Ibm Corporation | In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection |
US5081421A (en) * | 1990-05-01 | 1992-01-14 | At&T Bell Laboratories | In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection |
US5213655A (en) * | 1990-05-16 | 1993-05-25 | International Business Machines Corporation | Device and method for detecting an end point in polishing operation |
US5081796A (en) * | 1990-08-06 | 1992-01-21 | Micron Technology, Inc. | Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer |
US5036015A (en) * | 1990-09-24 | 1991-07-30 | Micron Technology, Inc. | Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers |
US5240552A (en) * | 1991-12-11 | 1993-08-31 | Micron Technology, Inc. | Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection |
US5308438A (en) * | 1992-01-30 | 1994-05-03 | International Business Machines Corporation | Endpoint detection apparatus and method for chemical/mechanical polishing |
US5321304A (en) * | 1992-07-10 | 1994-06-14 | Lsi Logic Corporation | Detecting the endpoint of chem-mech polishing, and resulting semiconductor device |
US5431592A (en) * | 1992-11-16 | 1995-07-11 | Fuji Photo Film Co., Ltd. | Method and apparatus for burnishing magnetic disks |
US5433651A (en) * | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
US5569063A (en) * | 1994-08-05 | 1996-10-29 | Nihon Micro Coating Co., Ltd. | Polishing apparatus |
US5558568A (en) * | 1994-10-11 | 1996-09-24 | Ontrak Systems, Inc. | Wafer polishing machine with fluid bearings |
US5593344A (en) * | 1994-10-11 | 1997-01-14 | Ontrak Systems, Inc. | Wafer polishing machine with fluid bearings and drive systems |
EP0738561A1 (en) * | 1995-03-28 | 1996-10-23 | Applied Materials, Inc. | Apparatus and method for in-situ endpoint detection and monitoring for chemical mechanical polishing operations |
Cited By (151)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6074287A (en) * | 1996-04-12 | 2000-06-13 | Nikon Corporation | Semiconductor wafer polishing apparatus |
US6143123A (en) * | 1996-11-06 | 2000-11-07 | Micron Technology, Inc. | Chemical-mechanical planarization machine and method for uniformly planarizing semiconductor wafers |
US6458015B1 (en) | 1996-11-06 | 2002-10-01 | Micron Technology, Inc. | Chemical-mechanical planarization machine and method for uniformly planarizing semiconductor wafers |
US6656025B2 (en) | 1997-02-14 | 2003-12-02 | Lam Research Corporation | Integrated pad and belt for chemical mechanical polishing |
US6328642B1 (en) | 1997-02-14 | 2001-12-11 | Lam Research Corporation | Integrated pad and belt for chemical mechanical polishing |
US6111634A (en) * | 1997-05-28 | 2000-08-29 | Lam Research Corporation | Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing |
US6621584B2 (en) | 1997-05-28 | 2003-09-16 | Lam Research Corporation | Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing |
US6146248A (en) * | 1997-05-28 | 2000-11-14 | Lam Research Corporation | Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher |
US6108091A (en) * | 1997-05-28 | 2000-08-22 | Lam Research Corporation | Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing |
US6261155B1 (en) | 1997-05-28 | 2001-07-17 | Lam Research Corporation | Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher |
US6042454A (en) * | 1997-06-04 | 2000-03-28 | Ebara Corporation | System for detecting the endpoint of the polishing of a semiconductor wafer by a semiconductor wafer polisher |
US6260272B1 (en) * | 1997-06-16 | 2001-07-17 | Brother Kogyo Kabushiki Kaisha | Method of manufacturing nozzle plate of inkjet printer head |
US5913713A (en) * | 1997-07-31 | 1999-06-22 | International Business Machines Corporation | CMP polishing pad backside modifications for advantageous polishing results |
US6454641B1 (en) | 1997-11-05 | 2002-09-24 | David E. Weldon | Hydrostatic fluid bearing support with adjustable inlet heights |
US6244945B1 (en) | 1997-11-05 | 2001-06-12 | Mosel Vitelic, Inc. | Polishing system including a hydrostatic fluid bearing support |
US5957764A (en) * | 1997-11-05 | 1999-09-28 | Aplex, Inc. | Modular wafer polishing apparatus and method |
US6086456A (en) * | 1997-11-05 | 2000-07-11 | Aplex, Inc. | Polishing method using a hydrostatic fluid bearing support having fluctuating fluid flow |
EP0920956A3 (en) * | 1997-11-05 | 2001-05-23 | Aplex, Inc. | Polishing apparatus and method |
EP0920956A2 (en) * | 1997-11-05 | 1999-06-09 | Aplex, Inc. | Polishing apparatus and method |
US6062959A (en) * | 1997-11-05 | 2000-05-16 | Aplex Group | Polishing system including a hydrostatic fluid bearing support |
US5934974A (en) * | 1997-11-05 | 1999-08-10 | Aplex Group | In-situ monitoring of polishing pad wear |
US6062961A (en) * | 1997-11-05 | 2000-05-16 | Aplex, Inc. | Wafer polishing head drive |
US6254459B1 (en) * | 1998-03-10 | 2001-07-03 | Lam Research Corporation | Wafer polishing device with movable window |
US6068539A (en) * | 1998-03-10 | 2000-05-30 | Lam Research Corporation | Wafer polishing device with movable window |
US6241847B1 (en) | 1998-06-30 | 2001-06-05 | Lsi Logic Corporation | Method and apparatus for detecting a polishing endpoint based upon infrared signals |
US6077783A (en) * | 1998-06-30 | 2000-06-20 | Lsi Logic Corporation | Method and apparatus for detecting a polishing endpoint based upon heat conducted through a semiconductor wafer |
US6258205B1 (en) | 1998-06-30 | 2001-07-10 | Lsi Logic Corporation | Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material |
US6268224B1 (en) | 1998-06-30 | 2001-07-31 | Lsi Logic Corporation | Method and apparatus for detecting an ion-implanted polishing endpoint layer within a semiconductor wafer |
US6071818A (en) * | 1998-06-30 | 2000-06-06 | Lsi Logic Corporation | Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material |
US6285035B1 (en) | 1998-07-08 | 2001-09-04 | Lsi Logic Corporation | Apparatus for detecting an endpoint polishing layer of a semiconductor wafer having a wafer carrier with independent concentric sub-carriers and associated method |
US6074517A (en) * | 1998-07-08 | 2000-06-13 | Lsi Logic Corporation | Method and apparatus for detecting an endpoint polishing layer by transmitting infrared light signals through a semiconductor wafer |
US6000997A (en) * | 1998-07-10 | 1999-12-14 | Aplex, Inc. | Temperature regulation in a CMP process |
US6126527A (en) * | 1998-07-10 | 2000-10-03 | Aplex Inc. | Seal for polishing belt center support having a single movable sealed cavity |
US6080670A (en) * | 1998-08-10 | 2000-06-27 | Lsi Logic Corporation | Method of detecting a polishing endpoint layer of a semiconductor wafer which includes a non-reactive reporting specie |
US6152808A (en) * | 1998-08-25 | 2000-11-28 | Micron Technology, Inc. | Microelectronic substrate polishing systems, semiconductor wafer polishing systems, methods of polishing microelectronic substrates, and methods of polishing wafers |
US6416402B1 (en) | 1998-08-25 | 2002-07-09 | Micron Technology, Inc. | Methods of polishing microelectronic substrates, and methods of polishing wafers |
US6354908B2 (en) | 1998-10-22 | 2002-03-12 | Lsi Logic Corp. | Method and apparatus for detecting a planarized outer layer of a semiconductor wafer with a confocal optical system |
US6201253B1 (en) | 1998-10-22 | 2001-03-13 | Lsi Logic Corporation | Method and apparatus for detecting a planarized outer layer of a semiconductor wafer with a confocal optical system |
WO2000025982A1 (en) * | 1998-10-29 | 2000-05-11 | Lam Research Corporation | Apparatus and method for performing end point detection on a linear planarization tool |
WO2000025983A1 (en) * | 1998-10-29 | 2000-05-11 | Lam Research Corporation | Use of zeta potential during chemical mechanical polishing for end point detection |
US6186865B1 (en) * | 1998-10-29 | 2001-02-13 | Lam Research Corporation | Apparatus and method for performing end point detection on a linear planarization tool |
US6325706B1 (en) * | 1998-10-29 | 2001-12-04 | Lam Research Corporation | Use of zeta potential during chemical mechanical polishing for end point detection |
US6875085B2 (en) | 1998-11-06 | 2005-04-05 | Mosel Vitelic, Inc. | Polishing system including a hydrostatic fluid bearing support |
US6121147A (en) * | 1998-12-11 | 2000-09-19 | Lsi Logic Corporation | Apparatus and method of detecting a polishing endpoint layer of a semiconductor wafer which includes a metallic reporting substance |
US6117779A (en) * | 1998-12-15 | 2000-09-12 | Lsi Logic Corporation | Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint |
US6383332B1 (en) | 1998-12-15 | 2002-05-07 | Lsi Logic Corporation | Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint |
US6379231B1 (en) | 1999-02-04 | 2002-04-30 | Applied Materials, Inc. | Apparatus and methods for chemical mechanical polishing with an advanceable polishing sheet |
US6475070B1 (en) | 1999-02-04 | 2002-11-05 | Applied Materials, Inc. | Chemical mechanical polishing with a moving polishing sheet |
US20040198185A1 (en) * | 1999-02-04 | 2004-10-07 | Redeker Fred C. | Linear polishing sheet with window |
US6796880B2 (en) | 1999-02-04 | 2004-09-28 | Applied Materials, Inc. | Linear polishing sheet with window |
US20030181137A1 (en) * | 1999-02-04 | 2003-09-25 | Applied Materials, Inc., A Delaware Corporation | Linear polishing sheet with window |
US7303467B2 (en) | 1999-02-04 | 2007-12-04 | Applied Materials, Inc. | Chemical mechanical polishing apparatus with rotating belt |
US6991517B2 (en) | 1999-02-04 | 2006-01-31 | Applied Materials Inc. | Linear polishing sheet with window |
US20040209559A1 (en) * | 1999-02-04 | 2004-10-21 | Applied Materials, A Delaware Corporation | Chemical mechanical polishing apparatus with rotating belt |
US7104875B2 (en) | 1999-02-04 | 2006-09-12 | Applied Materials, Inc. | Chemical mechanical polishing apparatus with rotating belt |
US6179709B1 (en) | 1999-02-04 | 2001-01-30 | Applied Materials, Inc. | In-situ monitoring of linear substrate polishing operations |
US20070021043A1 (en) * | 1999-02-04 | 2007-01-25 | Applied Materials, Inc. | Chemical mechanical polishing apparatus with rotating belt |
US6244935B1 (en) | 1999-02-04 | 2001-06-12 | Applied Materials, Inc. | Apparatus and methods for chemical mechanical polishing with an advanceable polishing sheet |
US6241583B1 (en) | 1999-02-04 | 2001-06-05 | Applied Materials, Inc. | Chemical mechanical polishing with a plurality of polishing sheets |
US6585563B1 (en) | 1999-02-04 | 2003-07-01 | Applied Materials, Inc. | In-situ monitoring of linear substrate polishing operations |
US6729944B2 (en) | 1999-02-04 | 2004-05-04 | Applied Materials Inc. | Chemical mechanical polishing apparatus with rotating belt |
US6491570B1 (en) | 1999-02-25 | 2002-12-10 | Applied Materials, Inc. | Polishing media stabilizer |
US7381116B2 (en) | 1999-02-25 | 2008-06-03 | Applied Materials, Inc. | Polishing media stabilizer |
US20030032380A1 (en) * | 1999-02-25 | 2003-02-13 | Applied Materials, Inc. | Polishing media stabilizer |
US7040964B2 (en) | 1999-02-25 | 2006-05-09 | Applied Materials, Inc. | Polishing media stabilizer |
US6224461B1 (en) | 1999-03-29 | 2001-05-01 | Lam Research Corporation | Method and apparatus for stabilizing the process temperature during chemical mechanical polishing |
US6217427B1 (en) * | 1999-04-06 | 2001-04-17 | Agere Systems Inc. | Mobius strip belt for linear CMP tools |
US6135859A (en) * | 1999-04-30 | 2000-10-24 | Applied Materials, Inc. | Chemical mechanical polishing with a polishing sheet and a support sheet |
US6451699B1 (en) | 1999-07-30 | 2002-09-17 | Lsi Logic Corporation | Method and apparatus for planarizing a wafer surface of a semiconductor wafer having an elevated portion extending therefrom |
US6566268B1 (en) | 1999-07-30 | 2003-05-20 | Lsi Logic Corporation | Method and apparatus for planarizing a wafer surface of a semiconductor wafer having an elevated portion extending therefrom |
US6379216B1 (en) * | 1999-10-22 | 2002-04-30 | Advanced Micro Devices, Inc. | Rotary chemical-mechanical polishing apparatus employing multiple fluid-bearing platens for semiconductor fabrication |
US6293139B1 (en) * | 1999-11-03 | 2001-09-25 | Memc Electronic Materials, Inc. | Method of determining performance characteristics of polishing pads |
US6626744B1 (en) | 1999-12-17 | 2003-09-30 | Applied Materials, Inc. | Planarization system with multiple polishing pads |
US20040121710A1 (en) * | 2000-03-31 | 2004-06-24 | Lam Research Corporation | Method and apparatus for conditioning a polishing pad |
US6626743B1 (en) * | 2000-03-31 | 2003-09-30 | Lam Research Corporation | Method and apparatus for conditioning a polishing pad |
US6899601B2 (en) * | 2000-03-31 | 2005-05-31 | Lam Research Corporation | Method and apparatus for conditioning a polishing pad |
US6428394B1 (en) | 2000-03-31 | 2002-08-06 | Lam Research Corporation | Method and apparatus for chemical mechanical planarization and polishing of semiconductor wafers using a continuous polishing member feed |
US6261959B1 (en) | 2000-03-31 | 2001-07-17 | Lam Research Corporation | Method and apparatus for chemically-mechanically polishing semiconductor wafers |
US6616801B1 (en) | 2000-03-31 | 2003-09-09 | Lam Research Corporation | Method and apparatus for fixed-abrasive substrate manufacturing and wafer polishing in a single process path |
US7751609B1 (en) | 2000-04-20 | 2010-07-06 | Lsi Logic Corporation | Determination of film thickness during chemical mechanical polishing |
WO2001094076A1 (en) * | 2000-06-08 | 2001-12-13 | Honeywell International Inc. | Chemical-hydrodynamic etch planarization |
US6733615B2 (en) | 2000-06-30 | 2004-05-11 | Lam Research Corporation | Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool |
US6495464B1 (en) | 2000-06-30 | 2002-12-17 | Lam Research Corporation | Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool |
US6500056B1 (en) | 2000-06-30 | 2002-12-31 | Lam Research Corporation | Linear reciprocating disposable belt polishing method and apparatus |
US20030036274A1 (en) * | 2000-06-30 | 2003-02-20 | Lam Research Corporation | Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool |
US6361414B1 (en) | 2000-06-30 | 2002-03-26 | Lam Research Corporation | Apparatus and method for conditioning a fixed abrasive polishing pad in a chemical mechanical planarization process |
US6679763B2 (en) | 2000-06-30 | 2004-01-20 | Lam Research Corporation | Apparatus and method for qualifying a chemical mechanical planarization process |
US6435952B1 (en) | 2000-06-30 | 2002-08-20 | Lam Research Corporation | Apparatus and method for qualifying a chemical mechanical planarization process |
US6936133B2 (en) | 2000-06-30 | 2005-08-30 | Lam Research Corporation | Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool |
US6843706B2 (en) | 2000-06-30 | 2005-01-18 | Ebara Corporation | Polishing apparatus |
US6746320B2 (en) | 2000-06-30 | 2004-06-08 | Lam Research Corporation | Linear reciprocating disposable belt polishing method and apparatus |
US20040029489A1 (en) * | 2000-06-30 | 2004-02-12 | Manabu Tsujimura | Polishing apparatus |
US6520841B2 (en) | 2000-07-10 | 2003-02-18 | Applied Materials, Inc. | Apparatus and methods for chemical mechanical polishing with an incrementally advanceable polishing sheet |
US6419559B1 (en) | 2000-07-10 | 2002-07-16 | Applied Materials, Inc. | Using a purge gas in a chemical mechanical polishing apparatus with an incrementally advanceable polishing sheet |
US20030096559A1 (en) * | 2000-08-09 | 2003-05-22 | Brian Marshall | Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates |
US7182668B2 (en) * | 2000-08-09 | 2007-02-27 | Micron Technology, Inc. | Methods for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates |
US20060160470A1 (en) * | 2000-08-09 | 2006-07-20 | Micron Technology, Inc. | Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates |
US6974364B2 (en) * | 2000-08-09 | 2005-12-13 | Micron Technology, Inc. | Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates |
US6520834B1 (en) * | 2000-08-09 | 2003-02-18 | Micron Technology, Inc. | Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates |
US20030171069A1 (en) * | 2000-08-29 | 2003-09-11 | Applied Materials, Inc. | Web lift system for chemical mechanical planarization |
US6773337B1 (en) | 2000-11-07 | 2004-08-10 | Planar Labs Corporation | Method and apparatus to recondition an ion exchange polish pad |
US6722950B1 (en) | 2000-11-07 | 2004-04-20 | Planar Labs Corporation | Method and apparatus for electrodialytic chemical mechanical polishing and deposition |
US6905526B1 (en) | 2000-11-07 | 2005-06-14 | Planar Labs Corporation | Fabrication of an ion exchange polish pad |
US6592439B1 (en) | 2000-11-10 | 2003-07-15 | Applied Materials, Inc. | Platen for retaining polishing material |
US6554688B2 (en) * | 2001-01-04 | 2003-04-29 | Lam Research Corporation | Method and apparatus for conditioning a polishing pad with sonic energy |
US6875091B2 (en) * | 2001-01-04 | 2005-04-05 | Lam Research Corporation | Method and apparatus for conditioning a polishing pad with sonic energy |
US6609961B2 (en) | 2001-01-09 | 2003-08-26 | Lam Research Corporation | Chemical mechanical planarization belt assembly and method of assembly |
US6752698B1 (en) | 2001-03-19 | 2004-06-22 | Lam Research Corporation | Method and apparatus for conditioning fixed-abrasive polishing pads |
US6767427B2 (en) | 2001-06-07 | 2004-07-27 | Lam Research Corporation | Apparatus and method for conditioning polishing pad in a chemical mechanical planarization process |
US20020185223A1 (en) * | 2001-06-07 | 2002-12-12 | Lam Research Corporation | Apparatus and method for conditioning polishing pad in a chemical mechanical planarization process |
US6503131B1 (en) | 2001-08-16 | 2003-01-07 | Applied Materials, Inc. | Integrated platen assembly for a chemical mechanical planarization system |
US6837964B2 (en) | 2001-08-16 | 2005-01-04 | Applied Materials, Inc. | Integrated platen assembly for a chemical mechanical planarization system |
US6568991B2 (en) * | 2001-08-28 | 2003-05-27 | Speedfam-Ipec Corporation | Method and apparatus for sensing a wafer in a carrier |
US6939207B2 (en) | 2001-10-26 | 2005-09-06 | Lam Research Corporation | Method and apparatus for controlling CMP pad surface finish |
US20040127144A1 (en) * | 2001-10-26 | 2004-07-01 | Lam Research Corporation | Method and apparatus for controlling CMP pad surface finish |
US6645052B2 (en) | 2001-10-26 | 2003-11-11 | Lam Research Corporation | Method and apparatus for controlling CMP pad surface finish |
US20030139115A1 (en) * | 2001-12-27 | 2003-07-24 | Lam Research Corporation | Method and apparatus for applying downward force on wafer during CMP |
US6712670B2 (en) * | 2001-12-27 | 2004-03-30 | Lam Research Corporation | Method and apparatus for applying downward force on wafer during CMP |
US20040161939A1 (en) * | 2001-12-27 | 2004-08-19 | Lam Research Corporation | Method and apparatus for applying downward force on wafer during CMP |
US20030153245A1 (en) * | 2002-01-17 | 2003-08-14 | Homayoun Talieh | Advanced chemical mechanical polishing system with smart endpoint detection |
US7097538B2 (en) | 2002-01-17 | 2006-08-29 | Asm Nutool, Inc. | Advanced chemical mechanical polishing system with smart endpoint detection |
US6722946B2 (en) * | 2002-01-17 | 2004-04-20 | Nutool, Inc. | Advanced chemical mechanical polishing system with smart endpoint detection |
US6942546B2 (en) | 2002-01-17 | 2005-09-13 | Asm Nutool, Inc. | Endpoint detection for non-transparent polishing member |
US6857947B2 (en) | 2002-01-17 | 2005-02-22 | Asm Nutool, Inc | Advanced chemical mechanical polishing system with smart endpoint detection |
WO2003074228A1 (en) * | 2002-01-17 | 2003-09-12 | Nutool, Inc. | Advanced chemical mechanical polishing system with smart endpoint detection |
US20060063469A1 (en) * | 2002-01-17 | 2006-03-23 | Homayoun Talieh | Advanced chemical mechanical polishing system with smart endpoint detection |
US20040023607A1 (en) * | 2002-03-13 | 2004-02-05 | Homayoun Talieh | Method and apparatus for integrated chemical mechanical polishing of copper and barrier layers |
US20040214508A1 (en) * | 2002-06-28 | 2004-10-28 | Lam Research Corporation | Apparatus and method for controlling film thickness in a chemical mechanical planarization system |
US20040219867A1 (en) * | 2002-06-28 | 2004-11-04 | Lam Research Corporation | Apparatus and method for controlling fluid material composition on a polishing pad |
US7166015B2 (en) * | 2002-06-28 | 2007-01-23 | Lam Research Corporation | Apparatus and method for controlling fluid material composition on a polishing pad |
US6752693B1 (en) * | 2002-07-26 | 2004-06-22 | Lam Research Corporation | Afferent-based polishing media for chemical mechanical planarization |
US7040957B2 (en) * | 2002-08-14 | 2006-05-09 | Novellus Systems Inc. | Platen and manifold for polishing workpieces |
US20040033759A1 (en) * | 2002-08-14 | 2004-02-19 | Schultz Stephen C. | Platen and manifold for polishing workpieces |
US20050186892A1 (en) * | 2003-05-06 | 2005-08-25 | Applied Materials, Inc. A Delaware Corporation | Profile control platen |
US7115024B2 (en) | 2003-05-06 | 2006-10-03 | Applied Materials, Inc. | Profile control platen |
US6913518B2 (en) | 2003-05-06 | 2005-07-05 | Applied Materials, Inc. | Profile control platen |
US20040235393A1 (en) * | 2003-05-21 | 2004-11-25 | Kazuto Hirokawa | Substrate polishing apparatus |
US20070042679A1 (en) * | 2003-05-21 | 2007-02-22 | Kazuto Hirokawa | Substrate polishing apparatus |
US7101257B2 (en) * | 2003-05-21 | 2006-09-05 | Ebara Corporation | Substrate polishing apparatus |
US7547242B2 (en) * | 2003-05-21 | 2009-06-16 | Ebara Corporation | Substrate polishing apparatus |
US7018273B1 (en) | 2003-06-27 | 2006-03-28 | Lam Research Corporation | Platen with diaphragm and method for optimizing wafer polishing |
US7086325B2 (en) * | 2003-07-11 | 2006-08-08 | Casa Herrera, Inc. | Single sensor press system |
US20050006208A1 (en) * | 2003-07-11 | 2005-01-13 | Richard Armstrong | Single sensor press system |
US7153182B1 (en) | 2004-09-30 | 2006-12-26 | Lam Research Corporation | System and method for in situ characterization and maintenance of polishing pad smoothness in chemical mechanical polishing |
US20110106292A1 (en) * | 2009-11-05 | 2011-05-05 | Cone Michael | Method and System for Measuring the Dynamic Response of a Structure During a Machining Process |
US9696710B2 (en) * | 2009-11-05 | 2017-07-04 | Vibration Technologies, Llc | Method and system for measuring the dynamic response of a structure during a machining process |
US20170348819A1 (en) * | 2016-06-02 | 2017-12-07 | Semiconductor Manufacturing International (Shanghai) Corporation | Chemical mechanical polishing (cmp) apparatus and method |
US10099339B2 (en) * | 2016-06-02 | 2018-10-16 | Semiconductor Manufacturing International (Shanghai) Corporation | Chemical mechanical polishing (CMP) apparatus and method |
DE202017105160U1 (en) | 2017-05-18 | 2018-08-22 | Steinemann Technology Ag | Belt grinding device for monitoring an abrasive belt |
DE102017120260A1 (en) | 2017-05-18 | 2018-11-22 | Steinemann Technology Ag | Method for monitoring an abrasive belt |
CN113182988A (en) * | 2021-05-25 | 2021-07-30 | 陈思源 | High-precision flexible quantitative polishing machine and polishing method |
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