Search Images Maps Play YouTube News Gmail Drive More »
Sign in
Screen reader users: click this link for accessible mode. Accessible mode has the same essential features but works better with your reader.

Patents

  1. Advanced Patent Search
Publication numberUS6178082 B1
Publication typeGrant
Application numberUS 09/031,236
Publication dateJan 23, 2001
Filing dateFeb 26, 1998
Priority dateFeb 26, 1998
Fee statusLapsed
Publication number031236, 09031236, US 6178082 B1, US 6178082B1, US-B1-6178082, US6178082 B1, US6178082B1
InventorsMukta S. Farooq, David E. Kotecki, Robert A. Rita, Stephen M. Rossnagel
Original AssigneeInternational Business Machines Corporation
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
High temperature, conductive thin film diffusion barrier for ceramic/metal systems
US 6178082 B1
Abstract
A multilayer ceramic substrate having a thin film structure containing capacitor connected thereto is provided as an interposer capacitor, the capacitor employing platinum as the bottom electrode of the capacitor. In a preferred capacitor, a dielectric material such as barium titanate is used as the dielectric material between the capacitor electrodes. The fabrication of the interposer capacitor requires an in-situ or post deposition high temperature anneal and the use of such dielectrics requires heating of the capacitor structure in a non-reducing atmosphere. A layer of a high temperature, thin film diffusion barrier such as TaSiN on the lower platinum electrode between the electrode and underlying multilayer ceramic substrate prevents or minimizes oxidization of the metallization of the multilayer ceramic substrate to which the thin film structure is connected during the fabrication process. A method is also provided for fabricating an interposer capacitor with a multilayer ceramic substrate base and a thin film multilayer structure having at least one capacitor comprising at least one bottom platinum electrode.
Images(2)
Previous page
Next page
Claims(15)
Thus, having described the invention, what is claimed is:
1. An interposer capacitor comprising:
a multilayer ceramic substrate comprising a plurality of ceramic layers having therein metallized circuitry, interconnecting metallized vias and bottom to top vias;
a thin film structure electrically connected to the multilayer ceramic substrate, the thin film structure containing at least one capacitor comprising at least one lower first electrode comprising a layer of first conductive material and an upper second electrode comprising a layer of second conductive material with a dielectric material therebetween with each electrode layer being connected by wiring to a corresponding pad on the surface of the thin film structure; and a barrier layer on the lower surface of the first conductive material, the barrier layer being between the first conductive material and the vias and metallized circuitry of the multilayer ceramic substrate.
2. The structure of claim 1 wherein the barrier layer comprises conductive materials, silicides or other low resistance inert materials.
3. The structure of claim 1 wherein the barrier layer is selected from the group consisting of tantalum silicon nitride, tantalum aluminum nitride, titanium silicon nitride, titanium nitride, tantalum nitride, tungsten nitride and titanium aluminum nitride.
4. The structure of claim 1 wherein the conductive materials are selected from the group consisting of platinum, iridium, ruthenium, palladium, gold, silver or alloys thereof or conductive oxides RuOx and IrOx.
5. The structure of claim 1 wherein the lower electrode comprises the layer of first conductive material and the barrier layer.
6. The structure of claim 1 wherein the dielectric material is selected from the group consisting of barium titanate, barium strontium titanate, strontium titanate, barium zirconate titanate, lead lanthanum zirconate titanate, lead zirconate titanate or tantalum oxide.
7. The Structure of claim 1 wherein the barrier layer is about 50 to 5000 Å thick.
8. A multilayer electronic component comprising a lower electronic component and an upper electronic component which are electrically connected by the interposer capacitor of claim 1.
9. A method for fabricating an interposer capacitor comprising:
forming a thin film structure on the surface of a multilayer ceramic substrate having metallization therein, metal containing via interconnectings and bottom to top vias, the thin film structure containing at least one capacitor within said thin film structure comprising a first layer of conductive material as a lower first electrode, a dielectric material layer formed on the upper surface of the first electrode and an upper second layer of conductive material on the surface of the dielectric as a second electrode, the first electrode and second electrode being connected to corresponding pads on the surface of the thin film structure by separate wirings from each electrode, the lower first electrode having a barrier layer on the lower surface of the first electrode between the first electrode and the vias and metallization of the multilayer ceramic substrate.
10. The method of claim 9 wherein the barrier layer comprises conductive materials, silicides or other low resistance inert materials.
11. The method of claim 9 wherein the barrier layer is selected from the group consisting of tantalum silicon nitride, tantalum aluminum nitride, titanium silicon nitride, titanium nitride, tantalum nitride, tungsten nitride and titanium aluminum nitride.
12. The method of claim 9 wherein the conductive materials are selected from the group consisting of platinum, iridium, ruthenium, palladium, gold, silver or alloys thereof or conductive oxides RuOx and IrOx.
13. The method of claim 9, wherein the lower first electrode comprises the layer of first conductive material and the barrier layer.
14. The method of claim 8 wherein the dielectric material is selected from the group consisting of barium titanate, barium strontium titanate, strontium titanate, barium zirconate titanate, lead lanthanum zirconate titanate, lead zirconate titanate or tantalum oxide.
15. The method of claim 9 wherein the barrier layer is about 50 to 5000 Å thick.
Description
BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to multilayer electronic components and, in particular, to interposer thin film containing capacitors which use a noble metal such as platinum, iridium, palladium, ruthenium, silver, gold, etc. or alloys thereof as a capacitor electrode and to a diffusion barrier material (such as TaSiN, TiN, TaN, TiAlN, etc.) used in combination with the electrode to minimize circuitry oxidation and to provide an enhanced electronic component.

2. Description of Related Art

Multilayer substrates with capacitors have found wide spread use in electronics as integrated circuit packages. Electronic components are being made smaller in size with a higher circuit density and to meet these requirements it is necessary to use fabrication materials having enhanced properties such as increased conductivity, higher dielectric constant values, etc. Many of these materials however, do not have properties which enable their use with the other components of the multilayer substrate and accordingly, their use is limited in the fabrication of multilayer electronic components.

Ceramics have found widespread use in electronics as a substrate for integrated circuit packages including multilayer ceramic substrates having inner capacitors. In general, a metallized circuit pattern is applied to the ceramic substrate which is in the form of a greensheet, and the greensheet stacked with other metallized greensheets and the stack sintered to create a monolith of substrate and circuitry. Multilayer circuit packages are constructed by combining ceramic particles and organic binders into unfired or “greensheet” tape. Interlayer conductive pads, known as “vias”, are then inserted (punched) through the layer, and the vias filled with metals (Mo, Cu, W, etc.) forming electronic interconnections between the circuits. Metallized circuit patterns are then applied to the punched greensheet as is well known in the art and the layers stacked and sintered.

A capacitor can be formed within the multilayer substrate by sandwiching an inner dielectric layer between a pair of electrodes. Conductive pads are formed on the top sheet and wirings are formed within the substrate to connect the capacitor electrodes to the pads. U.S. Pat. Nos. 4,567,542; 5,065,275; 5,099,388 and 5,144,526 show such multilayer ceramic (MLC) products having internal capacitors and the disclosure of these patents are hereby incorporated by reference.

A capacitor structure can alternately be formed by using thin films of electrodes and dielectrics which are deposited on a prefabricated multilayer ceramic substrate. Typically, the bottom electrode is deposited using such techniques as sputter deposition, evaporation, chemical vapor deposition or sol-gel. The electrode is made from a noble metal (Pt, In, Ru, Pd, Ag—Pd, Au) or a noble metal oxide (IrO2, RuO2, etc.). The electrode may then be subjected to patterning by employing a photoresist stencil to define the pattern followed by wet or dry etching to delineate areas and thus create the pattern. This step is followed by deposition of the dielectric material using a physical or chemical vapor deposition method, or other techniques such as a spin-on technique. An example of films applied wet is a sol-gel film or other organic medium film which is heat treated leaving the inorganic dielectric component. The dielectric film may require one or more heat treatments in specific ambients such as oxidizing atmospheres to arrive at desired stoichiometries. An example of a dielectric film is barium titanate (BT), barium strontium titanate (BST) or barium zirconate titanate (BZT). These films can be deposited using a sputter deposition technique which employs an appropriate target in the presence of argon plasma, metallorganic chemical vapor deposition or sol-gel processing.

The dielectric film may then be patterned using a resist stencil and dry or wet etching methods. The final step is to put down the top electrode, which is typically selected from the above list of materials used for the bottom electrode, using methods such as those described above.

Platinum and other such desirable capacitor electrode materials are not an effective barrier in thin film components to the diffusion of oxygen in the temperature range used to fabricate the component. Oxygen moves readily through the platinum and oxidizes underlying vias and other circuitry wiring in the multilayer ceramic substrate which vias and circuitry may be made of Mo, Cu, W, etc. This oxidization results in either an electrical opening or a higher resistance path for the electrical signal, both of which are unacceptable.

Bearing in mind the problems and deficiencies of the prior art, it is therefore an object of the present invention to provide a multilayer ceramic electronic component containing thereon a thin film postfire capacitor having a noble metal electrode such as platinum, iridium, palladium, ruthenium, silver, gold, etc. which component has enhanced electrical integrity and operating characteristics.

It is another object of the present invention to provide a method for forming an electronic component comprising a multilayer ceramic containing thereon a thin film postfire capacitor having a noble metal electrode which component has enhanced electrical integrity and operating characteristics.

Still other objects and advantages of the invention will in part be obvious and will in part be apparent from the specification.

SUMMARY OF THE INVENTION

The above and other objects and advantages, which will be apparent to one skilled in the art, are achieved in the present invention which is directed, in a first aspect, to an electronic component structure comprising:

a multilayer ceramic substrate comprising a plurality of ceramic layers having thereon metallized circuitry, interconnecting metallized vias and bottom to top vias;

a thin film structure electrically connected to the multilayer ceramic substrate, the thin film structure containing at least one capacitor comprising at least one lower first electrode comprising a layer of platinum or other noble metal and an upper second metal electrode with a dielectric material therebetween with each electrode layer being connected by wiring from the respective electrode to a corresponding pad on the surface of the thin film structure; and

a barrier layer of preferably TaSiN on the lower surface of the lower first electrode which barrier layer is between the platinum or other noble metal and the underlying metallized vias and circuitry.

In another aspect, the present invention relates to a method for fabricating an electronic component structure comprising:

forming a multilayer ceramic substrate by stacking layers of greensheets having metallization thereon and metal containing via interconnections and bottom to top vias and sintering the stack; and

forming a thin film structure on the surface of the multilayer ceramic substrate, the thin film structure containing at least one capacitor within said thin film structure comprising a first layer of platinum or other noble metal as a lower first electrode, a dielectric material layer formed on the surface of the platinum or other noble metal and an upper second layer of conductive metal on the surface of the dielectric as a second electrode, the first electrode and second electrode being connected to respective pads on the surface of the thin film structure by separate wirings from each electrode, the platinum (noble metal) first electrode having a barrier layer of preferably TaSiN deposited on the lower surface of the first electrode between the platinum (noble metal) and the underlying metal vias and metallized circuitry.

BRIEF DESCRIPTION OF THE DRAWINGS

The features of the invention believed to be novel and the elements characteristic of the invention are set forth with particularity in the appended claims. The figures are for illustration purposes only and are not drawn to scale. The invention itself, however, both as to organization and method of operation, may best be understood by reference to the detailed description which:

FIG. 1 shows a schematic of an interposer capacitor connected by C4 solder connections to a chip and to a multilayer ceramic substrate or other electronic component substrate.

FIG. 2 shows a schematic of an interposer capacitor of the invention.

DESCRIPTION OF THE PREFERRED EMBODIMENT(S)

In describing the preferred embodiments of the present invention, reference will be made herein to FIGS. 1-2 of the drawings in which like numerals refer to like features of the inventions. Features of the invention are not necessarily shown to scale in the drawings.

Referring to FIG. 1, an electronic component employing an interposer capacitor of the invention is shown generally as 10. A multilayer ceramic or other electronic component substrate 11 such as a printed wiring board is shown electrically connected to interposer capacitor 13 by C4 solder bumps 12. The interposer capacitor 13 is also electrically connected to chip 15 by C4 solder bumps 14. The electronic component 10 may include microprocessors, SRAMS, DRAMS and chips.

The component 10 may be assembled using known fabrication techniques such as the C4 solder bumps shown in FIG. 1. This technology is very well-known and need not be discussed herein except that the order of fabrication of electronic component 10 will generally be C4 solder connection of the interposer capacitor to the multilayer ceramic substrate 11 followed by C4 solder bump connection of the chip 15 to the interposer capacitor 13.

The fabrication of a multilayer thin film structure is also well known in the art. In general, the multilayer thin film structure comprises a plurality of dielectric layers which include wiring patterns such as pads, straps, vias, electrodes, etc. The multilayer thin film structure is built layer-by-layer and each layer is typically made as follows. A dielectric material such as polyimide or epoxy is applied and a via defined for further interconnection. The via may be formed by laser or by photolithography techniques. A seed plating layer is applied on top thereof and a photoresist material then applied and exposed to define the desired wiring pattern. After developing, a metal such as copper is electroplated to form the wiring. The photoresist material and seed layer is then stripped. This is generally termed a lithography or photolithography process and may be used for additive or subtractive metallization procedures as is well-known in the art, e.g., as described in U.S. Pat. No. 5,258,236, which is incorporated herein by reference. The above procedure is continued for each layer until the thin film structure is completed.

Referring now to FIG. 2, an interposer capacitor of the invention is shown generally as 13. The interposer capacitor 13 comprises a multilayer ceramic substrate base 16 (shown for clarity as a single layer) on which the thin film capacitor is fabricated. The multilayer ceramic substrate 16 has through vias 18, 19 and 20 where 18 is a ground via connection, 19 is a power via connection and 20 is a signal via connection. Pads 17 on the lower surface thereof are used to electrically connect the interposer capacitor 13 to a substrate 11 as in FIG. 1 by C4 solder connectors 12.

The thin film structure containing a capacitor is shown generally as 34 and is carried on the surface of the multilayer ceramic substrate 16. The thin film multilayer structure 34 has a lower bottom electrode 21. The electrode 21 is shown as a single layer but is typically a composite and is preferably platinum having a TaSiN barrier layer 35 on the lower surface thereof. Such a composite layer is disclosed by M. Farooq, et al. in co-pending application Docket No. FI9-97-260 entitled “STRUCTURE AND METHOD FOR A THIN FILM MULTILAYER CAPACITOR”, filed on even date herewith, the disclosure of which is hereby incorporated by reference. A high K dielectric material 22 separates platinum electrode 21 from the top electrode 23 of the capacitor. Top electrode 23 may also be platinum or any other suitable metal such as iridium, ruthenium, palladium, gold silver or alloys thereof or conductive oxides like RuOx and IrOx. The top electrode 23 is overlaid with a polymer layer 24. Pads 31, 32 and 33 which overlay vias 28, 29 and 30, respectively, will be connected by C4 solder bumps to a chip as shown in FIG. 1. Any suitable terminator metallurgy can be used.

In the multilayer ceramic substrate 16, three vias are shown as 18, 19 and 20. These vias go from the bottom of the multilayer ceramic substrate 16 to the top of the multilayer ceramic substrate 16 and interconnect the substrate 11 on which the interposer capacitor will be electrically connected to the thin film structure of the interposer capacitor.

It has been found that the use of a TaSiN barrier layer 35 on the bottom surface of lower electrode 21 of the capacitor is an effective barrier in preventing the oxygen in the ambient from reaching the underlying molybdenum or other metal vias or circuitry below the barrier layer during fabrication of the high K dielectric thin film structure thus preventing or at least minimizing oxidization of the vias such as 18, 19 and 20. This is especially important in thin film structures containing an inner capacitor made using a dielectric such as barium titanate or other such dielectric material layer including BZT (barium zirconiate titanate), BST (barium strontium titanate), PLZT (lead lanthanum zirconate titanate), PZT (lead zirconate titanate), tantalum oxide, etc. for which a reducing atmosphere cannot be used to connect the interposer capacitor structure to the multilayer ceramic substrate. The TaSiN barrier layer material is also conductive which is a requirement for use in such components.

The stoichiometric composition of TaSiN is preferably about 0.3 tantalum, 0.3 silicon and 0.4 nitrogen (atom fractions). The compositions can vary to some extent provided that the silicon fraction remains above about 0.15 and preferably above about 0.27. It has also been found, and is an important aspect of the invention, that the contact resistance of the platinum/TaSiN interface is very low and does not create any significant problem in the signal transmittal at that interface. In some cases the TaSiN barrier layer can be used directly as a bottom electrode eliminating the need for a platinum electrode. However, for most applications, the platinum layer containing a planar TaSiN barrier layer is preferred in forming the inner capacitor of the multilayer ceramic product of the invention. The TaSiN barrier layer may vary in thickness from about 50 Å to 5000 Å, preferably about 1000 Å to 2500 Å, e.g., about 2000 Å. The platinum layer is typically about 2000 Å thick but may also vary widely such as about 500 to 10,000 Å.

The barrier layer may also be any suitable low resistant inert conductive material such as tantalum nitride, silicon nitride, tantalum silicon nitride, titanium nitride and tungsten nitride, silicides, etc. TaAlN is preferred.

While the present invention has been particularly described, in conjunction with a specific preferred embodiment, it is evident that many alternatives, modifications and variations will be apparent to those skilled in the art in light of the foregoing description. It is therefore contemplated that the appended claims will embrace any such alternatives, modifications and variations as falling within the true scope and spirit of the present invention.

Patent Citations
Cited PatentFiling datePublication dateApplicantTitle
US4349862 *Aug 11, 1980Sep 14, 1982International Business Machines CorporationCapacitive chip carrier and multilayer ceramic capacitors
US4407007 *May 28, 1981Sep 27, 1983International Business Machines CorporationProcess and structure for minimizing delamination in the fabrication of multi-layer ceramic substrate
US4567542Apr 23, 1984Jan 28, 1986Nec CorporationAlumina ceramic containing borosilicate-lead-glass and one high dielectric ceramic layer
US4954877 *Aug 2, 1989Sep 4, 1990Hitachi, Ltd.Chip carrier
US5043223Apr 23, 1990Aug 27, 1991Matsushita Electric Industrial Co., Ltd.Multilayer ceramic substrate and method for making the same
US5065275Sep 27, 1990Nov 12, 1991Kyocera CorporationMultilayer substrate with inner capacitors
US5099388Jun 15, 1990Mar 24, 1992Ngk Spark Plug Co., Ltd.Alumina multilayer wiring substrate provided with high dielectric material layer
US5144526Aug 5, 1991Sep 1, 1992Hughes Aircraft CompanyLow temperature co-fired ceramic structure containing buried capacitors
US5177670 *Feb 7, 1992Jan 5, 1993Hitachi, Ltd.Capacitor-carrying semiconductor module
US5258236May 3, 1991Nov 2, 1993Ibm CorporationMulti-layer thin film structure and parallel processing method for fabricating same
US5504041 *Aug 1, 1994Apr 2, 1996Texas Instruments IncorporatedConductive exotic-nitride barrier layer for high-dielectric-constant materials
US5617290 *Jun 7, 1995Apr 1, 1997Texas Instruments IncorporatedBarium strontium titanate (BST) thin films using boron
US5854534 *Nov 16, 1995Dec 29, 1998Fujitsu LimitedFor coupling an integrated circuit chip to a multichip module substrate
US5874369 *Dec 5, 1996Feb 23, 1999International Business Machines CorporationMethod for forming vias in a dielectric film
Non-Patent Citations
Reference
1Applied Surface Science, 53, "Amorphous Ta-Si-N Diffusion Barriers in Si/Al and Si/Cu Metallizations", Apr. 30, 1991, pp. 373-376.
2J. Appl. Physics 70 (5), "Thermal Oxidation of Amorphous Ternary Ta36Si14N50 Thin Films", Sep. 1, 1991, pp. 2828-2832.
3J. Electrochem Soc., "Amorphous Ternary Ta-Si-N Diffusion Barrier Between Si and Au", vol. 138, No. 7, Jul. 1991, pp. 2125-2129.
Referenced by
Citing PatentFiling datePublication dateApplicantTitle
US6274937 *Feb 1, 1999Aug 14, 2001Micron Technology, Inc.Silicon multi-chip module packaging with integrated passive components and method of making
US6329609 *Jun 29, 2000Dec 11, 2001International Business Machines CorporationMethod and structure to prevent distortion and expansion of organic spacer layer for thin film transfer-join technology
US6413645 *Apr 20, 2000Jul 2, 2002Battelle Memorial InstituteUltrabarrier substrates
US6573584 *Oct 27, 2000Jun 3, 2003Kyocera CorporationThin film electronic device and circuit board mounting the same
US6579614 *Mar 23, 2001Jun 17, 2003International Business Machines CorporationStructure having refractory metal film on a substrate
US6624500 *Nov 29, 2001Sep 23, 2003Kyocera CorporationThin-film electronic component and motherboard
US6720096Nov 14, 2000Apr 13, 2004Sanyo Electric Co., Ltd.Dielectric element film comprising insulator film including oxide-based dielectric film and electrode including first conductor film containing at least one selected from nickel, cobalt and molybdenum silicon nitrides
US6762476Feb 1, 2002Jul 13, 2004Sanyo Electric Co., LtdDielectric element including oxide dielectric film and method of manufacturing the same
US6833285 *Sep 12, 2000Dec 21, 2004Micron Technology, Inc.Method of making a chip packaging device having an interposer
US6885541Jun 18, 2004Apr 26, 2005Ngk Spark Plug Co., Ltd.Capacitor, and capacitor manufacturing process
US6888189 *Sep 21, 2001May 3, 2005Sanyo Electric Co., Ltd.Dielectric element including oxide-based dielectric film and method of fabricating the same
US6900991 *Dec 3, 2001May 31, 2005Intel CorporationElectronic assembly with sandwiched capacitors and methods of manufacture
US6962671May 22, 2003Nov 8, 2005Battelle Memorial InstituteMultilayer plastic substrates
US7133294Mar 15, 2005Nov 7, 2006Intel CorporationIntegrated circuit packages with sandwiched capacitors
US7176579 *Dec 12, 2003Feb 13, 2007Renesas Technology Corp.Semiconductor module
US7265448Jan 26, 2004Sep 4, 2007Marvell World Trade Ltd.Interconnect structure for power transistors
US7375412Mar 31, 2005May 20, 2008Intel CorporationiTFC with optimized C(T)
US7405366Jan 26, 2006Jul 29, 2008Fujitsu LimitedInterposer and electronic device fabrication method
US7453144Jun 29, 2005Nov 18, 2008Intel CorporationThin film capacitors and methods of making the same
US7456078Mar 31, 2006Nov 25, 2008Fujitsu LimitedThin-film capacitor and method for fabricating the same, electronic device and circuit board
US7459381Mar 22, 2006Dec 2, 2008Marvell World Trade Ltd.Integrated circuits and interconnect structure for integrated circuits
US7471225Dec 8, 2006Dec 30, 2008Marvell International Ltd.Transmitter digital-to-analog converter with noise shaping
US7522403 *Mar 21, 2006Apr 21, 2009Rinehart Motion Systems, LlcHigh current-load film capacitor assembly
US7538022 *Sep 28, 2006May 26, 2009Nec Electronics CorporationMethod of manufacturing electronic circuit device
US7547957Oct 30, 2007Jun 16, 2009Intel CorporationThin film capacitors and methods of making the same
US7586756 *Aug 8, 2006Sep 8, 2009Intel CorporationSplit thin film capacitor for multiple voltages
US7629269Mar 31, 2005Dec 8, 2009Intel CorporationHigh-k thin film grain size control
US7652338Oct 25, 2006Jan 26, 2010Marvell World Trade Ltd.Efficient transistor structure
US7656644Jan 10, 2008Feb 2, 2010Intel CorporationiTFC with optimized C(T)
US7733626Aug 10, 2007Jun 8, 2010Intel CorporationPassive device structure
US7755165Jan 10, 2008Jul 13, 2010Intel CorporationiTFC with optimized C(T)
US7800002Nov 14, 2005Sep 21, 2010Dai Nippon Printing Co., Ltd.Multilayer wiring board
US7810234Apr 10, 2007Oct 12, 2010Intel CorporationMethod of forming a thin film capacitor
US7821769 *Oct 27, 2009Oct 26, 2010Oh Young JooMetal capacitor and manufacturing method thereof
US7851872Sep 20, 2006Dec 14, 2010Marvell World Trade Ltd.Efficient transistor structure
US7863657Oct 25, 2006Jan 4, 2011Marvell World Trade Ltd.Efficient transistor structure
US7937830Jun 18, 2008May 10, 2011Fujitsu LimitedInterposer and electronic device fabrication method
US7960833Mar 17, 2008Jun 14, 2011Marvell World Trade Ltd.Integrated circuits and interconnect structure for integrated circuits
US7982280May 30, 2008Jul 19, 2011Marvell World Trade Ltd.Integrated circuits and interconnect structure for integrated circuits
US7986532Jul 27, 2009Jul 26, 2011Intel CorporationSplit thin film capacitor for multiple voltages
US7989852May 30, 2008Aug 2, 2011Marvell World Trade Ltd.Integrated circuits and interconnect structure for integrated circuits
US7999711Jul 28, 2010Aug 16, 2011Marvell International Ltd.Transmitter digital-to-analog converter with noise shaping
US8026550May 30, 2008Sep 27, 2011Marvell World Trade Ltd.Integrated circuits and interconnect structure for integrated circuits
US8088502Sep 20, 2007Jan 3, 2012Battelle Memorial InstituteNanostructured thin film optical coatings
US8487400Oct 23, 2007Jul 16, 2013Megica CorporationHigh performance system-on-chip using post passivation process
US8499426Jul 7, 2008Aug 6, 2013Intel CorporationMethods of making thin film capacitors
USRE40531 *Jul 12, 2004Oct 7, 2008Battelle Memorial InstituteUltrabarrier substrates
CN101066005BNov 14, 2005Feb 1, 2012大日本印刷株式会社多层布线基板及其制造方法
EP1727199A2 *Jan 7, 2005Nov 29, 2006Marvell World Trade Ltd.Integrated circuits and interconnect structure for integrated circuits
Legal Events
DateCodeEventDescription
Mar 17, 2009FPExpired due to failure to pay maintenance fee
Effective date: 20090123
Jan 23, 2009LAPSLapse for failure to pay maintenance fees
Aug 4, 2008REMIMaintenance fee reminder mailed
Jul 12, 2004FPAYFee payment
Year of fee payment: 4
Feb 26, 1998ASAssignment
Owner name: INTERNATIONAL BUSINESS MACHINES CORPORATION, NEW Y
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:FAROOQ, MUKTA S.;KOTECKI, DAVID E.;RITA, ROBERT A.;AND OTHERS;REEL/FRAME:009065/0146;SIGNING DATES FROM 19980213 TO 19980217