|Publication number||US6182605 B1|
|Application number||US 09/551,004|
|Publication date||Feb 6, 2001|
|Filing date||Apr 18, 2000|
|Priority date||Apr 19, 1999|
|Also published as||EP1047104A1|
|Publication number||09551004, 551004, US 6182605 B1, US 6182605B1, US-B1-6182605, US6182605 B1, US6182605B1|
|Original Assignee||Advantest Corp.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (2), Referenced by (19), Classifications (18), Legal Events (4)|
|External Links: USPTO, USPTO Assignment, Espacenet|
The invention relates to an apparatus for a particle beam induced modification of a specimen, comprising a source for generating a particle beam, nozzles for supplying a gas in the region of the specimen and electrodes which can be Supplied with a variable voltage.
Particle beam induced processes are well known for precise modification approaches especially in the semiconductor industry. Here, device modification is performed on a micrometre and nanometre scale for chip and mask repair and fast chip prototyping. Two basic modification techniques are applied for local processing with high spatial resolution: material etching and material deposition.
Those techniques are mainly applied in focussed ion beam systems. However equivalent techniques are also known from electron beam systems (D. Winkler et al, “E-beam probe station with integrated tool for electron beam induced etching”, Microelectronic engineering 31 (1996) 141 to 147).
In such a particle beam apparatus a particle beam is generated and focussed onto a specimen to be modified. A deflection system in the particle beam system deflects the beam to or scans the beam in those areas in which the modification is to take place. Additionally, a gas is supplied in the modification area of the specimen by means or a gas nozzle, which creates a gas atmosphere in the beam interaction area of the specimen. Due to the interaction of the particle beam with the gas molecules, chemically active atoms and radicals will be generated, which can interact with the specimen in the area of the beam interaction. Basically, two processes can be performed depending on the gases supplied. The following table shows some examples of materials and corresponding modification gases:
Material to be
Material to be etched
Silicon oxide, Silicon
The gas supply unit has to be placed after the final objective lens very close to the specimen in order to achieve a high-density gas atmosphere for a fast modification process. This placement of the gas supply unit next to the particle beam, however, can cause limitations regarding the beam performance. Especially in high end systems, in which high spatial resolution (fine probe size) is generated by electrical fields, the nozzle generates interferences. Since the nozzle is made of conductive material (in order to avoid charging), it distorts the electrical field and will consequently increase the probe diameter of the particle beam. This will reduce system resolution and, correspondingly, will increase the minimum feature size applicable for modification.
JP-A-01 169 858 discloses an apparatus for a particle beam induced modification of a specimen according to the preamble to claim 1. The deflecting means of this known apparatus is constituted of multiple deflecting electrodes arranged axially symmetrically with the optical axis of the charged particle beam. At least one of the deflecting electrodes is used as a gas pipe to guide the gas to the surface of the specimen.
The object of the invention is to improve the apparatus for particle beam induced modification so that it allows particle beam modification without the restriction of resolution loss due to the presence of the gas supply means.
The object is achieved by the features of claim 1 in that the electrodes are forming a tube and the nozzles, being integrated in the electrodes, are leading into the tube.
By arranging the electrodes in the form of a tube, it is possible to create a homogenous gas atmosphere within the tube which results in a more uniform material edging or material deposition.
This effect can be further improved, if the tube has a cover with an incident opening for the particle beam.
Further embodiments of the invention are the subject matter of the subordinate claims.
Further embodiments and advantages of the invention are explained in greater detail below with reference to the drawings, in which:
FIG. 1 shows a schematic representation of the apparatus,
FIG. 2 shows a schematic top view of the gas supply means and the electrodes and
FIG. 3 shows a sectional view along the line V—V of FIG. 2.
FIG. 1 shows an apparatus for particle beam induced modification of a specimen comprising a source 1 for generating a particle beam 2 and a component having means 3′ f or supplying a gas in the region of a specimen 5 and electrodes 4′ which can be supplied with a variable voltage.
Furthermore, the apparatus comprises a lens system 6 and an objective lens 7. Of course, the apparatus consists of further means which are not illustrated, such as, for instance, a deflector and a detector.
FIGS. 2 and 3 disclose the component, having means 3′ for supplying a gas and having electrodes 4′ which can be supplied with a variable voltage, in greater detail. The electrodes 4′a, 4′b, 4′c, 4′d are not formed by the nozzles themselves. On the contrary, the nozzles 3′a, 3′b, 3′c, 3′d are integrated in the electrodes. The electrodes are formed by parts of a tube as disclosed in FIGS. 2 and 3. Every electrode has integrated a nozzle which leads into the tube formed by all electrodes. By using all nozzles for supplying the same gas in the region of the specimen, it is possible to create a homogeneous gas atmosphere which results in a more uniform material etching or material deposition.
In order to further improve the homogenous gas atmoshpere, it is possible to close the tube with a cover 9 which has an incident opening 9 a for the particle beam (cf. FIG. 3).
In FIGS. 2 and 3 the electrodes are arranged in a quadrupole configuration. However, other multipole configurations as hexapole or octupole configurations are also possible.
According to the invention it is not at all necessary that every electrode is provided with a nozzle.
The electrodes may achieve additional functions or take over functions which are performed by other optical components. Accordingly, the electrodes can be used as a deflector for the particle beam or as a stigmator or both. Furthermore, they may be adapted to generate an axial acceleration or deceleration field.
The means 3′ for supplying a gas and the electrodes 4′ are placed between the objective lens 7 and the specimen 5. Preferably, they should be placed close to the specimen and should have their axis on the optical axis of the particle beam apparatus. By arranging the nozzles together with the electrodes in a multipole configuration a symmetry of the means 3′ for supplying the gas is created which decreases asymmetrical distortions of the particle beam. By arranging the electrodes in combination with the nozzles, it is possible to achieve additional functions or to take over functions which are performed by other optical components. This, in most cases, will reduce the working distance of the objective lens which additionally will improve the optical system performance.
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|Citing Patent||Filing date||Publication date||Applicant||Title|
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|US20150380205 *||Jun 30, 2014||Dec 31, 2015||Fei Company||Integrated light optics and gas delivery in a charged particle lens|
|U.S. Classification||118/723.0EB, 118/723.0FI|
|International Classification||H01J37/317, C23C16/48, H01L21/3065, H01L21/203, H01J37/305, H01L21/027, H01L21/302|
|Cooperative Classification||H01J37/3056, H01J2237/047, H01J2237/12, H01J2237/15, H01J2237/006, H01J2237/1532, H01J37/3178|
|European Classification||H01J37/317C, H01J37/305B2|
|Nov 17, 2000||AS||Assignment|
Owner name: ADVANTEST CORPORATION, JAPAN
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:FROSIEN, JURGEN;REEL/FRAME:011317/0261
Effective date: 20001106
|Aug 25, 2004||REMI||Maintenance fee reminder mailed|
|Feb 7, 2005||LAPS||Lapse for failure to pay maintenance fees|
|Apr 5, 2005||FP||Expired due to failure to pay maintenance fee|
Effective date: 20050206