|Publication number||US6427066 B1|
|Application number||US 09/607,420|
|Publication date||Jul 30, 2002|
|Filing date||Jun 30, 2000|
|Priority date||Jun 30, 2000|
|Also published as||WO2002003555A2, WO2002003555A3|
|Publication number||09607420, 607420, US 6427066 B1, US 6427066B1, US-B1-6427066, US6427066 B1, US6427066B1|
|Inventors||Gary W. Grube|
|Original Assignee||Motorola, Inc.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (160), Non-Patent Citations (104), Referenced by (40), Classifications (15), Legal Events (10)|
|External Links: USPTO, USPTO Assignment, Espacenet|
High speed communications among individual chips within products or among products require interfaces such as high speed buses, I/O (input/output) interfaces for optical links or high speed RF (radio frequency) links, or other interface structures. Integration of the several devices that comprise a product into a unitary structure eliminates the need for some of the interfaces required for signal hand off, buffering and other functions that must be accomplished in a multi-element product. Prior art fabrication techniques available for producing unitary structures involving various semiconductor materials have proven prohibitively costly and space-inefficient to yield significant improvements by unifying structures.
A unitary communication structure reduces the need for individual I/O interfaces for each module transition, and thereby eliminates the need for on-chip “real estate” to accommodate such I/O interfaces. Other advantages realized by a cost-efficient unitary fabrication ability include a significant reduction in size, an increase in operating speed, a reduction of electromagnetic noise and radiation emanations, an increase in performance reliability, a reduction in cost of manufacture and lower operating power requirements with an attendant lower cost of operation.
A capability for truly unitary fabrication employing a variety of semiconductor manufacturing technologies provides opportunities to produce multi-technology unitary structures that meet a wide variety of needs. For example, unitary structures may be fabricated to satisfy a wide variety of standards, such as cellular telephone standards, personal communication system (PCS) standards, “Bluetooth” communication standards, and other industry-wide standards.
There is a need for a communication apparatus manifested in a cost-effective integrated unitary structure appropriate for high speed communications, especially for such communications involving dynamic determination of message routing.
This invention relates generally to semiconductor structures and devices for optical communication signal handling apparatuses and to a method for their fabrication. This invention more specifically relates to compound semiconductor structures and devices and to the fabrication and use of semiconductor structures, devices, and integrated circuits that include a monocrystalline compound semiconductor material.
The preferred embodiment of the present invention is an apparatus for effecting communications by a home station among a plurality of remote stations in at least one communication medium. The apparatus comprises (a) local signal receiving circuitry for receiving an originating signal at the home station, the originating signal contains local intelligence; and (b) local signal processing circuitry coupled with the local signal receiving circuitry for processing the originating signal for conveying the local intelligence via the at least one communication medium to a selected remote station of the plurality of remote stations. The local signal receiving circuitry and the local signal processing circuitry are implemented in a unitary structure borne upon a single silicon substrate. The apparatus may further comprise (c) remote signal receiving circuitry for receiving a transmitted signal at the home station, the transmitted signal containing remote intelligence; and (d) remote signal processing circuitry coupled with the remote signal receiving circuitry for processing the transmitted signal for conveying the remote intelligence to a user. The remote signal receiving circuitry and the remote signal processing circuitry are preferably implemented in the unitary structure.
The method of the present invention preferably comprises the steps of: (a) providing an apparatus according to the unitary structure described above implemented in a unitary structure borne upon a single silicon substrate; (b) providing information processing circuitry for dynamically determining ad hoc network routing among the plurality of remote stations for establishing communications with at least one target remote station of the at least one selected remote stations not in direct communication with the home station. The information processing circuitry is preferably implemented in the unitary structure. The method proceeds with the steps of (c) ascertaining input capabilities and output capabilities of the home station; (d) polling the at least one selected remote station to ascertain network capabilities of the at least one selected remote station; (e) defining at least one primary network route among the at least one selected remote station for communicating with the at least one target remote station; and (f) conveying the local intelligence via the at least one communication medium to the at least one selected remote station using the at least one primary network route.
The vast majority of semiconductor discrete devices and integrated circuits employed for communications, including high-speed communications, are fabricated from silicon, at least in part because of the availability of inexpensive, high quality monocrystalline silicon substrates. Other semiconductor materials, such as the so called compound semiconductor materials, have physical attributes, including wider bandgap and/or higher mobility than silicon, or direct bandgaps that makes these materials advantageous for certain types of semiconductor devices. Unfortunately, compound semiconductor materials are generally much more expensive than silicon and are not available in large wafers as is silicon. Gallium arsenide (GaAs), the most readily available compound semiconductor material, is available in wafers only up to about 150 millimeters (mm) in diameter. In contrast, silicon wafers are available up to about 300 mm and are widely available at 200 mm. The 150 mm GaAs wafers are many times more expensive than are their silicon counterparts. Wafers of other compound semiconductor materials are even less available and are more expensive than GaAs.
Because of the desirable characteristics of compound semiconductor materials, and because of their present generally high cost and low availability in bulk form, for many years attempts have been made to grow thin films of the compound semiconductor materials on a foreign substrate. To achieve optimal characteristics of the compound semiconductor material, however, a monocrystalline film of high crystalline quality is desired. Attempts have been made, for example, to grow layers of a monocrystalline compound semiconductor material on germanium, silicon, and various insulators. These attempts have generally been unsuccessful because lattice mismatches between the host crystal and the grown crystal have caused the resulting thin film of compound semiconductor material to be of low crystalline quality.
If a large area thin film of high quality monocrystalline compound semiconductor material was available at low cost, a variety of semiconductor devices could advantageously be fabricated in that film at a low cost compared to the cost of fabricating such devices on a bulk wafer of compound semiconductor material or in an epitaxial film of such material on a bulk wafer of compound semiconductor material. In addition, if a thin film of high quality monocrystalline compound semiconductor material could be realized on a bulk wafer such as a silicon wafer, an integrated device structure could be achieved that took advantage of the best properties of both the silicon and the compound semiconductor material.
Accordingly, a need exists for a semiconductor structure that provides a high quality monocrystalline compound semiconductor film over another monocrystalline material and for a process for making such a structure.
The present invention is illustrated by way of example and not limitation in the accompanying figures, in which like references indicate similar elements, and in which:
FIGS. 1-3 illustrate schematically, in cross section, device structures in accordance with various embodiments of the invention.
FIG. 4 illustrates graphically the relationship between maximum attainable film thickness and lattice mismatch between a host crystal and a grown crystalline overlayer.
FIG. 5 illustrates a high resolution Transmission Electron Micrograph of a structure including a monocrystalline accommodating buffer layer.
FIG. 6 illustrates an x-ray diffraction spectrum of a structure including a monocrystalline accommodating buffer layer.
FIG. 7 illustrates a high resolution Transmission Electron Micrograph of a structure including an amorphous oxide layer.
FIG. 8 illustrates an x-ray diffraction spectrum of a structure including an amorphous oxide layer.
FIG. 9 is a schematic block diagram of a prior art communication apparatus implemented in discrete components.
FIG. 10 is a schematic block diagram in plan view of a communication apparatus constructed according to the teachings of the present invention.
FIG. 11 is a schematic block diagram in elevation view of the communication apparatus constructed according to the teachings of the present invention illustrated in FIG. 10.
FIG. 12 is a perspective illustration of a representative communication product including the apparatus described in connection with FIGS. 10 and 11.
FIG. 13 is a schematic diagram illustrating dynamic network routing.
FIG. 14 is a flow chart illustrating the preferred embodiment of the method of the present invention.
Skilled artisans will appreciate that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help to improve understanding of embodiments of the present invention.
FIG. 1 illustrates schematically, in cross section, a portion of a semiconductor structure 20 in accordance with an embodiment of the invention. Semiconductor structure 20 includes a monocrystalline substrate 22, accommodating buffer layer 24 comprising a monocrystalline material, and a layer 26 of a monocrystalline compound semiconductor material. In this context, the term “monocrystalline” shall have the meaning commonly used within the semiconductor industry. The term shall refer to materials that are a single crystal or that are substantially a single crystal and shall include those materials having a relatively small number of defects such as dislocations and the like as are commonly found in substrates of silicon or germanium or mixtures of silicon and germanium and epitaxial layers of such materials commonly found in the semiconductor industry.
In accordance with one embodiment of the invention, structure 20 also includes an amorphous intermediate layer 28 positioned between substrate 22 and accommodating buffer layer 24, Structure 20 may also include a template layer 30 between the accommodating buffer layer and compound semiconductor layer 26. As will be explained more fully below, the template layer helps to initiate the growth of the compound semiconductor layer on the accommodating buffer layer. The amorphous intermediate layer helps to relieve the strain in the accommodating buffer layer and by doing so, aids in the growth of a high crystalline quality accommodating buffer layer.
Substrate 22, in accordance with an embodiment of the invention, is a monocrystalline semiconductor wafer, preferably of large diameter. The wafer can be of a material from Group IV of the periodic table, and preferably a material from Group IVA. Examples of Group IV semiconductor materials include silicon, germanium, mixed silicon and germanium, mixed silicon and carbon, mixed silicon, germanium and carbon, and the like. Preferably substrate 22 is a wafer containing silicon or germanium, and most preferably is a high quality monocrystalline silicon wafer as used in the semiconductor industry. Accommodating buffer layer 24 is preferably a monocrystalline oxide or nitride material epitaxially grown on the underlying substrate. In accordance with one embodiment of the invention, amorphous intermediate layer 28 is grown on substrate 22 at the interface between substrate 22 and the growing accommodating buffer layer by the oxidation of substrate 22 during the growth of layer 24. The amorphous intermediate layer serves to relieve strain that might otherwise occur in the monocrystalline accommodating buffer layer as a result of differences in the lattice constants of the substrate and the buffer layer. As used herein, lattice constant refers to the distance between atoms of a cell measured in the plane of the surface. If such strain is not relieved by the amorphous intermediate layer, the strain may cause defects in the crystalline structure of the accommodating buffer layer. Defects in the crystalline structure of the accommodating buffer layer, in turn, would make it difficult to achieve a high quality crystalline structure in monocrystalline compound semiconductor layer 26.
Accommodating buffer layer 24 is preferably a monocrystalline oxide or nitride material selected for its crystalline compatibility with the underlying substrate and with the overlying compound semiconductor material. For example, the material could be an oxide or nitride having a lattice structure matched to the substrate and to the subsequently applied semiconductor material. Materials that are suitable for the accommodating buffer layer include metal oxides such as the alkaline earth metal titanates, alkaline earth metal zirconates, alkaline earth metal hafnates, alkaline earth metal tantalates, alkaline earth metal ruthenates, alkaline earth metal niobates, alkaline earth metal vanadates, perovskite oxides such as alkaline earth metal tin-based perovskites; lanthanum aluminate, lanthanum scandium oxide, and gadolinium oxide. Additionally, various nitrides such as gallium nitride, aluminum nitride, and boron nitride may also be used for the accommodating buffer layer. Most of these materials are insulators, although strontium ruthenate, for example, is a conductor. Generally, these materials are metal oxides or metal nitrides, and more particularly, these metal oxide or nitrides typically include at least two different metallic elements. In some specific applications, the metal oxides or nitride may include three or more different metallic elements.
Amorphous interface layer 28 is preferably an oxide formed by the oxidation of the surface of substrate 22, and more preferably is composed of a silicon oxide. The thickness of layer 28 is sufficient to relieve strain attributed to mismatches between the lattice constants of substrate 22 and accommodating buffer layer 24. Typically, layer 28 has a thickness in the range of approximately 0.5-5 nm.
The compound semiconductor material of layer 26 can be selected, as needed for a particular semiconductor structure, from any of the Group IIIA and VA elements (III-V semiconductor compounds), mixed III-V compounds, Group II (A or B) and VIA elements (II-VI semiconductor compounds), and mixed II-VI compounds. Examples include gallium arsenide (GaAs), gallium indium arsenide (GaInAs), gallium aluminum arsenide (GaAlAs), indium phosphide (InP), cadmium sulfide (CdS), cadmium mercury telluride (CdHgTe), zinc selenide (ZnSe), zinc sulfur selenide (ZnSSe), and the like. Suitable template materials chemically bond to the surface of the accommodating buffer layer 24 at selected sites and provide sites for the nucleation of the epitaxial growth of the subsequent compound semiconductor layer 26. Appropriate materials for template 30 are discussed below.
FIG. 2 illustrates, in cross section, a portion of a semiconductor structure 40 in accordance with a further embodiment of the invention. Structure 40 is similar to the previously described semiconductor structure 20, except that an additional buffer layer 32 is positioned between accommodating buffer layer 24 and layer of monocrystalline compound semiconductor material 26. Specifically, the additional buffer layer is positioned between template layer 30 and the overlying layer of compound semiconductor material. The additional buffer layer, formed of a semiconductor or compound semiconductor material, serves to provide a lattice compensation when the lattice constant of the accommodating buffer layer cannot be adequately matched to the overlying monocrystalline compound semiconductor material layer.
FIG. 3 schematically illustrates, in cross section, a portion of a semiconductor structure 34 in accordance with another exemplary embodiment of the invention. Structure 34 is similar to structure 20, except that structure 34 includes an amorphous layer 36, rather than accommodating buffer layer 24 and amorphous interface layer 28, and an additional semiconductor layer 38.
As explained in greater detail below, amorphous layer 36 may be formed by first forming an accommodating buffer layer and an amorphous interface layer in a similar manner to that described above. Monocrystalline semiconductor layer 26 is then formed (by epitaxial growth) overlying the monocrystalline accommodating buffer layer. The accommodating buffer layer is then exposed to an anneal process to convert the monocrystalline accommodating buffer layer to an amorphous layer. Amorphous layer 36 formed in this manner comprises materials from both the accommodating buffer and interface layers, which amorphous layers may or may not amalgamate. Thus, layer 36 may comprise one or two amorphous layers. Formation of amorphous layer 36 between substrate 22 and semiconductor layer 38 (subsequent to layer 38 formation) relieves stresses between layers 22 and 38 and provides a true compliant substrate for subsequent processing—e.g, compound semiconductor layer 26 formation.
The processes previously described above in connection with FIGS. 1 and 2 are adequate for growing monocrystalline compound semiconductor layers over a monocrystalline substrate. However, the process described in connection with FIG. 3, which includes transforming a monocrystalline accommodating buffer layer to an amorphous oxide layer, may be better for growing monocrystalline compound semiconductor layers because it allows any strain in layer 26 to relax.
Semiconductor layer 38 may include any of the materials described throughout this application in connection with either of compound semiconductor material layer 26 or additional buffer layer 32. For example, layer 38 may include monocrystalline Group IV or monocrystalline compound semiconductor materials.
In accordance with one embodiment of the present invention, semiconductor layer 38 serves as an anneal cap during layer 36 formation and as a template for subsequent semiconductor layer 26 formation. Accordingly, layer 38 is preferably thick enough to provide a suitable template for layer 26 growth (at least one monolayer) and thin enough to allow layer 38 to form as a substantially defect free monocrystalline semiconductor compound.
In accordance with another embodiment of the invention, semiconductor layer 38 comprises compound semiconductor material (e.g., a material discussed above in connection with compound semiconductor layer 26) that is thick enough to form devices within layer 38. In this case, a semiconductor structure in accordance with the present invention does not include compound semiconductor layer 26. In other words, the semiconductor structure in accordance with this embodiment only includes one compound semiconductor layer disposed above amorphous oxide layer 36.
The following non-limiting, illustrative examples illustrate various combinations of materials useful in structures 20, 40, and 34 in accordance with various alternative embodiments of the invention. These examples are merely illustrative, and it is not intended that the invention be limited to these illustrative examples.
In accordance with one embodiment of the invention, monocrystalline substrate 22 is a silicon substrate oriented in the (100) direction. The silicon substrate can be, for example, a silicon substrate as is commonly used in making complementary metal oxide semiconductor (CMOS) integrated circuits having a diameter of about 200-300 mm. In accordance with this embodiment of the invention, accommodating buffer layer 24 is a monocrystalline layer of SrzBa1−zTiO3 where z ranges from 0 to 1 and the amorphous intermediate layer is a layer of silicon oxide (SiOx) formed at the interface between the silicon substrate and the accommodating buffer layer. The value of z is selected to obtain one or more lattice constants closely matched to corresponding lattice constants of the subsequently formed layer 26. The accommodating buffer layer can have a thickness of about 2 to about 100 nanometers (nm) and preferably has a thickness of about 10 nm. In general, it is desired to have an accommodating buffer layer thick enough to isolate the compound semiconductor layer from the substrate to obtain the desired electrical and optical properties. Layers thicker than 100 nm usually provide little additional benefit while increasing cost unnecessarily; however, thicker layers may be fabricated if needed. The amorphous intermediate layer of silicon oxide can have a thickness of about 0.5-5 nm, and preferably a thickness of about 1.5-2.5 nm.
In accordance with this embodiment of the invention, compound semiconductor material layer 26 is a layer of gallium arsenide (GaAs) or aluminum gallium arsenide (AlGaAs) having a thickness of about 1 nm to about 100 micrometers (μm) and preferably a thickness of about 0.5 μm to 10 μm. The thickness generally depends on the application for which the layer is being prepared. To facilitate the epitaxial growth of the gallium arsenide or aluminum gallium arsenide on the monocrystalline oxide, a template layer is formed by capping the oxide layer. The template layer is preferably 1-10 monolayers of Ti—As, Sr—O—As, Sr—Ga—O, or Sr—Al—O. By way of a preferred example, 1-2 monolayers of Ti—As or Sr—Ga—O have been shown to successfully grow GaAs layers.
In accordance with a further embodiment of the invention, monocrystalline substrate 22 is a silicon substrate as described above. The accommodating buffer layer is a monocrystalline oxide of strontium or barium zirconate or hafnate in a cubic or orthorhombic phase with an amorphous intermediate layer of silicon oxide formed at the interface between the silicon substrate and the accommodating buffer layer. The accommodating buffer layer can have a thickness of about 2-100 nm and preferably has a thickness of at least 5 nm to ensure adequate crystalline and surface quality and is formed of a monocrystalline SrZrO3, BaZrO3, SrHfO3, BaSnO3 or BaHfO3. For example, a monocrystalline oxide layer of BaZrO3 can grow at a temperature of about 700 degrees C. The lattice structure of the resulting crystalline oxide exhibits a 45 degree rotation with respect to the substrate silicon lattice structure.
An accommodating buffer layer formed of these zirconate or hafnate materials is suitable for the growth of compound semiconductor materials in the indium phosphide (InP) system. The compound semiconductor material can be, for example, indium phosphide (InP), indium gallium arsenide (InGaAs), aluminum indium arsenide, (AlInAs), or aluminum gallium indium arsenic phosphide (AlGaAs), having a thickness of about 1.0 nm to 10 μm. A suitable template for this structure is 1-10 monolayers of zirconium-arsenic (Zr—As), zirconium-phosphorus (Zr—P), hafnium-arsenic (Hf—As), hafnium-phosphorus (Hf—P), strontium-oxygen-arsenic (Sr—O—As), strontium-oxygen-phosphorus (Sr—O—P), barium-oxygen-arsenic (Ba—O—As), indium-strontium-oxygen (In—Sr—O), or barium-oxygen-phosphorus (Ba—O—P), and preferably 1-2 monolayers of one of these materials. By way of an example, for a barium zirconate accommodating buffer layer, the surface is terminated with 1-2 monolayers of zirconium followed by deposition of 1-2 monolayers of arsenic to form a Zr—As template. A monocrystalline layer of the compound semiconductor material from the indium phosphide system is then grown on the template layer. The resulting lattice structure of the compound semiconductor material exhibits a 45 degree rotation with respect to the accommodating buffer layer lattice structure and a lattice mismatch to (100) InP of less than 2.5%, and preferably less than about 1.0%.
In accordance with a further embodiment of the invention, a structure is provided that is suitable for the growth of an epitaxial film of a II-VI material overlying a silicon substrate. The substrate is preferably a silicon wafer as described above. A suitable accommodating buffer layer material is SrxBa1−xTiO3 where x ranges from 0 to 1, having a thickness of about 2-100 nm and preferably a thickness of about 5-15 nm. The II-VI compound semiconductor material can be, for example zinc selenide (ZnSe) or zinc sulfur selenide (ZnSSe). A suitable template for this material system includes 1-10 monolayers of zinc-oxygen (Zn—O) followed by 1-2 monolayers of an excess of zinc followed by the selenidation of zinc on the surface. Alternatively, a template can be, for example, 1-10 monolayers of strontium-sulfur (Sr—S) followed by the ZnSSe.
This embodiment of the invention is an example of structure 40 illustrated in FIG. 2. Substrate 22, monocrystalline oxide layer 24, and monocrystalline compound semiconductor material layer 26 can be similar to those described in example 1. In addition, an additional buffer layer 32 serves to alleviate any strains that might result from a mismatch of the crystal lattice of the accommodating buffer layer and the lattice of the monocrystalline semiconductor material. Buffer layer 32 can be a layer of germanium or a GaAs, an aluminum gallium arsenide (AlGaAs), an indium gallium phosphide (InGaP), an aluminum gallium phosphide (AlGaP), an indium gallium arsenide (InGaAs), an aluminum indium phosphide (AlInP), a gallium arsenide phosphide (GaAsP), or an indium gallium phosphide (InGaP) strain compensated superlattice. In accordance with one aspect of this embodiment, buffer layer 32 includes a GaAsxP1−x superlattice, wherein the value of x ranges from 0 to 1. In accordance with another aspect, buffer layer 32 includes an InyGa1−yP superlattice, wherein the value of y ranges from 0 to 1. By varying the value of x or y, as the case may be, the lattice constant is varied from bottom to top across the superlattice to create a match between lattice constants of the underlying oxide and the overlying compound semiconductor material. The compositions of other materials, such as those listed above, may also be similarly varied to manipulate the lattice constant of layer 32 in a like manner. The superlattice can have a thickness of about 50-500 nm and preferably has a thickness of about 100-200 nm. The template for this structure can be the same of that described in example 1. Alternatively, buffer layer 32 can be a layer of monocrystalline germanium having a thickness of 1-50 nm and preferably having a thickness of about 2-20 nm. In using a germanium buffer layer, a template layer of either germanium-strontium (Ge—Sr) or germanium-titanium (Ge—Ti) having a thickness of about one monolayer can be used as a nucleating site for the subsequent growth of the monocrystalline compound semiconductor material layer. The formation of the oxide layer is capped with either a monolayer of strontium or a monolayer of titanium to act as a nucleating site for the subsequent deposition of the monocrystalline germanium. The monolayer of strontium or titanium provides a nucleating site to which the first monolayer of germanium can bond.
This example also illustrates material useful in a structure 40 as illustrated in FIG. 2. Substrate material 22, accommodating buffer layer 24, monocrystalline compound semiconductor material layer 26 and template layer 30 can be the same as those described above in example 2. In addition, a buffer layer 32 is inserted between the accommodating buffer layer and the overlying monocrystalline compound semiconductor material layer. The buffer layer, a further monocrystalline semiconductor material, can be, for example, a graded layer of indium gallium arsenide (InGaAs) or indium aluminum arsenide (InAlAs). In accordance with one aspect of this embodiment, buffer layer 32 includes InGaAs, in which the indium composition varies from 0 to about 47%. The additional buffer layer 32 preferably has a thickness of about 10-30 nm. Varying the composition of the buffer layer from GaAs to InGaAs serves to provide a lattice match between the underlying monocrystalline oxide material and the overlying layer of monocrystalline compound semiconductor material. Such a buffer layer is especially advantageous if there is a lattice mismatch between accommodating buffer layer 24 and monocrystalline compound semiconductor material layer 26.
This example provides exemplary materials useful in structure 34, as illustrated in FIG. 3. Substrate material 22, template layer 30, and monocrystalline compound semiconductor material layer 26 may be the same as those described above in connection with example 1.
Amorphous layer 36 is an amorphous oxide layer which is suitably formed of a combination of amorphous intermediate layer materials (e.g., layer 28 materials as described above) and accommodating buffer layer materials (e.g., layer 24 materials as described above). For example, amorphous layer 36 may include a combination of SiOx and SrzBa1−zTiO3 (where z ranges from 0 to 1), which combine or mix, at least partially, during an anneal process to form amorphous oxide layer 36.
The thickness of amorphous layer 36 may vary from application to application and may depend on such factors as desired insulating properties of layer 36, type of semiconductor material comprising layer 26, and the like. In accordance with one exemplary aspect of the present embodiment, layer 36 thickness is about 2 nm to about 100 nm, preferably about 2-10 nm, and more preferably about 5-6 nm.
Layer 38 comprises a monocrystalline compound semiconductor material that can be grown epitaxially over a monocrystalline oxide material such as material used to form accommodating buffer layer 24. In accordance with one embodiment of the invention, layer 38 includes the same materials as those comprising layer 26. For example, if layer 26 includes GaAs, layer 38 also includes GaAs. However, in accordance with other embodiments of the present invention, layer 38 may include materials different from those used to form layer 26. In accordance with one exemplary embodiment of the invention, layer 38 is about 1 monolayer to about 100 nm thick.
Referring again to FIGS. 1-3, substrate 22 is a monocrystalline substrate such as a monocrystalline silicon substrate. The crystalline structure of the monocrystalline substrate is characterized by a lattice constant and by a lattice orientation. In similar manner, accommodating buffer layer 24 is also a monocrystalline material and the lattice of that monocrystalline material is characterized by a lattice constant and a crystal orientation. The lattice constants of the accommodating buffer layer and the monocrystalline substrate must be closely matched or, alternatively, must be such that upon rotation of one crystal orientation with respect to the other crystal orientation, a substantial match in lattice constants is achieved. In this context the terms “substantially equal” and “substantially matched” mean that there is sufficient similarity between the lattice constants to permit the growth of a high quality crystalline layer on the underlying layer.
FIG. 4 illustrates graphically the relationship of the achievable thickness of a grown crystal layer of high crystalline quality as a function of the mismatch between the lattice constants of the host crystal and the grown crystal. Curve 42 illustrates the boundary of high crystalline quality material. The area to the right of curve 42 represents layers that tend to be polycrystalline. With no lattice mismatch, it is theoretically possible to grow an infinitely thick, high quality epitaxial layer on the host crystal. As the mismatch in lattice constants increases, the thickness of achievable, high quality crystalline layer decreases rapidly. As a reference point, for example, if the lattice constants between the host crystal and the grown layer are mismatched by more than about 2%, monocrystalline epitaxial layers in excess of about 20 nm cannot be achieved.
In accordance with one embodiment of the invention, substrate 22 is a (100) or (111) oriented monocrystalline silicon wafer and accommodating buffer layer 24 is a layer of strontium barium titanate. Substantial matching of lattice constants between these two materials is achieved by rotating the crystal orientation of the titanate material by 45° with respect to the crystal orientation of the silicon substrate wafer. The inclusion in the structure of amorphous interface layer 28, a silicon oxide layer in this example, if it is of sufficient thickness, serves to reduce strain in the titanate monocrystalline layer that might result from any mismatch in the lattice constants of the host silicon wafer and the grown titanate layer. As a result, in accordance with an embodiment of the invention, a high quality, thick, monocrystalline titanate layer is achievable.
Still referring to FIGS. 1-3, layer 26 is a layer of epitaxially grown monocrystalline material and that crystalline material is also characterized by a crystal lattice constant and a crystal orientation. In accordance with one embodiment of the invention, the lattice constant of layer 26 differs from the lattice constant of substrate 22. To achieve high crystalline quality in this epitaxially grown monocrystalline layer, the accommodating buffer layer must be of high crystalline quality. In addition, in order to achieve high crystalline quality in layer 26, substantial matching between the crystal lattice constant of the host crystal, in this case, the monocrystalline accommodating buffer layer, and the grown crystal is desired. With properly selected materials this substantial matching of lattice constants is achieved as a result of rotation of the crystal orientation of the grown crystal with respect to the orientation of the host crystal. If the grown crystal is gallium arsenide, aluminum gallium arsenide, zinc selenide, or zinc sulfur selenide and the accommodating buffer layer is monocrystalline SrxBa1−xTiO3, substantial matching of crystal lattice constants of the two materials is achieved, wherein the crystal orientation of the grown layer is rotated by 45° with respect to the orientation of the host monocrystalline oxide. Similarly, if the host material is a strontium or barium zirconate or a strontium or barium hafnate or barium tin oxide and the compound semiconductor layer is indium phosphide or gallium indium arsenide or aluminum indium arsenide, substantial matching of crystal lattice constants can be achieved by rotating the orientation of the grown crystal layer by 45° with respect to the host oxide crystal. In some instances, a crystalline semiconductor buffer layer between the host oxide and the grown compound semiconductor layer can be used to reduce strain in the grown monocrystalline compound semiconductor layer that might result from small differences in lattice constants. Better crystalline quality in the grown monocrystalline compound semiconductor layer can thereby be achieved.
The following example illustrates a process, in accordance with one embodiment of the invention, for fabricating a semiconductor structure such as the structures depicted in FIGS. 1-3. The process starts by providing a monocrystalline semiconductor substrate comprising silicon or germanium. In accordance with a preferred embodiment of the invention, the semiconductor substrate is a silicon wafer having a (100) orientation. The substrate is preferably oriented on axis or, at most, about 0.5° off axis. At least a portion of the semiconductor substrate has a bare surface, although other portions of the substrate, as described below, may encompass other structures. The term “bare” in this context means that the surface in the portion of the substrate has been cleaned to remove any oxides, contaminants, or other foreign material. As is well known, bare silicon is highly reactive and readily forms a native oxide. The term “bare” is intended to encompass such a native oxide. A thin silicon oxide may also be intentionally grown on the semiconductor substrate, although such a grown oxide is not essential to the process in accordance with the invention. In order to epitaxially grow a monocrystalline oxide layer overlying the monocrystalline substrate, the native oxide layer must first be removed to expose the crystalline structure of the underlying substrate. The following process is preferably carried out by molecular beam epitaxy (MBE), although other epitaxial processes may also be used in accordance with the present invention. The native oxide can be removed by first thermally depositing a thin layer of strontium, barium, a combination of strontium and barium, or other alkaline earth metals or combinations of alkaline earth metals in an MBE apparatus. In the case where strontium is used, the substrate is then heated to a temperature of about 750° C. to cause the strontium to react with the native silicon oxide layer. The strontium serves to reduce the silicon oxide to leave a silicon oxide-free surface. The resultant surface, which exhibits an ordered 2×1 structure, includes strontium, oxygen, and silicon. The ordered 2×1 structure forms a template for the ordered growth of an overlying layer of a monocrystalline oxide. The template provides the necessary chemical and physical properties to nucleate the crystalline growth of an overlying layer.
In accordance with an alternate embodiment of the invention, the native silicon oxide can be converted and the substrate surface can be prepared for the growth of a monocrystalline oxide layer by depositing an alkaline earth metal oxide, such as strontium oxide, strontium barium oxide, or barium oxide, onto the substrate surface by MBE at a low temperature and by subsequently heating the structure to a temperature of about 750° C. At this temperature a solid state reaction takes place between the strontium oxide and the native silicon oxide causing the reduction of the native silicon oxide and leaving an ordered 2×1 structure with strontium, oxygen, and silicon remaining on the substrate surface. Again, this forms a template for the subsequent growth of an ordered monocrystalline oxide layer.
Following the removal of the silicon oxide from the surface of the substrate, in accordance with one embodiment of the invention, the substrate is cooled to a temperature in the range of about 200-800° C and a layer of strontium titanate is grown on the template layer by molecular beam epitaxy. The MBE process is initiated by opening shutters in the MBE apparatus to expose strontium, titanium and oxygen sources. The ratio of strontium and titanium is approximately 1:1. The partial pressure of oxygen is initially set at a minimum value to grow stoichiometric strontium titanate at a growth rate of about 0.3-0.5 nm per minute. After initiating growth of the strontium titanate, the partial pressure of oxygen is increased above the initial minimum value. The overpressure of oxygen causes the growth of an amorphous silicon oxide layer at the interface between the underlying substrate and the growing strontium titanate layer. The growth of the silicon oxide layer results from the diffusion of oxygen through the growing strontium titanate layer to the interface where the oxygen reacts with silicon at the surface of the underlying substrate. The strontium titanate grows as an ordered monocrystal with the crystalline orientation rotated by 45° with respect to the ordered 2×1 crystalline structure of the underlying substrate. Strain that otherwise might exist in the strontium titanate layer because of the small mismatch in lattice constant between the silicon substrate and the growing crystal is relieved in the amorphous silicon oxide intermediate layer.
After the strontium titanate layer has been grown to the desired thickness, the monocrystalline strontium titanate is capped by a template layer that is conducive to the subsequent growth of an epitaxial layer of a desired compound semiconductor material. For the subsequent growth of a layer of gallium arsenide, the MBE growth of the strontium titanate monocrystalline layer can be capped by terminating the growth with 1-2 monolayers of titanium, 1-2 monolayers of titanium-oxygen or with 1-2 monolayers of strontium-oxygen. Following the formation of this capping layer, arsenic is deposited to form a Ti—As bond, a Ti—O—As bond or a Sr—O—As bond. Any of these form an appropriate template for deposition and formation of a gallium arsenide monocrystalline layer. Following the formation of the template, gallium is subsequently introduced to the reaction with the arsenic and gallium arsenide forms. Alternatively, gallium can be deposited on the capping layer to form a Sr—O—Ga bond, and arsenic is subsequently introduced with the gallium to form the GaAs.
FIG. 5 is a high resolution Transmission Electron Micrograph (TEM) of semiconductor material manufactured in accordance with the present invention. Single crystal SrTiO3 accommodating buffer layer 24 was grown epitaxially on silicon substrate 22. During this growth process, amorphous interfacial layer 28 is formed which relieves strain due to lattice mismatch. GaAs compound semiconductor layer 26 was then grown epitaxially using template layer 30.
FIG. 6 illustrates an x-ray diffraction spectrum taken on a structure including GaAs compound semiconductor layer 26 grown on silicon substrate 22 using accommodating buffer layer 24. The peaks in the spectrum indicate that both the accommodating buffer layer 24 and GaAs compound semiconductor layer 26 are single crystal and (100) orientated.
The structure illustrated in FIG. 2 can be formed by the process discussed above with the addition of an additional buffer layer deposition step. The additional buffer layer 32 is formed overlying the template layer before the deposition of the monocrystalline compound semiconductor layer. If the buffer layer is a compound semiconductor superlattice, such a superlattice can be deposited, by MBE for example, on the template described above. If instead the buffer layer is a layer of germanium, the process above is modified to cap the strontium titanate monocrystalline layer with a final layer of either strontium or titanium and then by depositing germanium to react with the strontium or titanium. The germanium buffer layer can then be deposited directly on this template.
Structure 34, illustrated in FIG. 3, may be formed by growing an accommodating buffer layer, forming an amorphous oxide layer over substrate 22, and growing semiconductor layer 38 over the accommodating buffer layer, as described above. The accommodating buffer layer and the amorphous oxide layer are then exposed to an anneal process sufficient to change the crystalline structure of the accommodating buffer layer from monocrystalline to amorphous, thereby forming an amorphous layer such that the combination of the amorphous oxide layer and the now amorphous accommodating buffer layer form a single amorphous oxide layer 36. Layer 26 is then subsequently grown over layer 38. Alternatively, the anneal process may be carried out subsequent to growth of layer 26.
In accordance with one aspect of this embodiment, layer 36 is formed by exposing substrate 22, the accommodating buffer layer, the amorphous oxide layer, and semiconductor layer 38 to a rapid thermal anneal process with a peak temperature of about 700° C. to about 1000° C. and a process time of about 1 to about 10 minutes. However, other suitable anneal processes may be employed to convert the accommodating buffer layer to an amorphous layer in accordance with the present invention. For example, laser annealing or “conventional” thermal annealing processes (in the proper environment) may be used to form layer 36. When conventional thermal annealing is employed to form layer 36, an overpressure of one or more constituents of layer 30 may be required to prevent degradation of layer 38 during the anneal process. For example, when layer 38 includes GaAs, the anneal environment preferably includes an overpressure of arsenic to mitigate degradation of layer 38.
As noted above, layer 38 of structure 34 may include any materials suitable for either of layers 32 or 26. Accordingly, any deposition or growth methods described in connection with either layer 32 or 26, may be employed to deposit layer 38.
FIG. 7 is a high resolution Transmission Electron Micrograph (TEM) of semiconductor material manufactured in accordance with the embodiment of the invention illustrated in FIG. 3. In accordance with this embodiment, a single crystal SrTiO3 accommodating buffer layer was grown epitaxially on silicon substrate 22. During this growth process, an amorphous interfacial layer forms as described above. Next, GaAs layer 38 is formed above the accommodating buffer layer and the accommodating buffer layer is exposed to an anneal process to form amorphous oxide layer 36.
FIG. 8 illustrates an x-ray diffraction spectrum taken on a structure including GaAs compound semiconductor layer 38 and amorphous oxide layer 36 formed on silicon substrate 22. The peaks in the spectrum indicate that GaAs compound semiconductor layer 38 is single crystal and (100) orientated and the lack of peaks around 40 to 50 degrees indicates that layer 36 is amorphous.
The process described above illustrates a process for forming a semiconductor structure including a silicon substrate, an overlying oxide layer, and a monocrystalline gallium arsenide compound semiconductor layer by the process of molecular beam epitaxy. The process can also be carried out by the process of chemical vapor deposition (CVD), metal organic chemical vapor deposition (MOCVD), migration enhanced epitaxy (MEE), atomic layer epitaxy (ALE), physical vapor deposition (PVD), chemical solution deposition (CSD), pulsed laser deposition (PLD), or the like. Further, by a similar process, other monocrystalline accommodating buffer layers such as alkaline earth metal titanates, zirconates, haffiates, tantalates, vanadates, ruthenates, and niobates, alkaline earth metal tin-based perovskites, lanthanum aluminate, lanthanum scandium oxide, and gadolinium oxide can also be grown. Further, by a similar process such as MBE, other III-V and II-VI monocrystalline compound semiconductor layers can be deposited overlying the monocrystalline oxide accommodating buffer layer.
Each of the variations of compound semiconductor materials and monocrystalline oxide accommodating buffer layer uses an appropriate template for initiating the growth of the compound semiconductor layer. For example, if the accommodating buffer layer is an alkaline earth metal zirconate, the oxide can be capped by a thin layer of zirconium. The deposition of zirconium can be followed by the deposition of arsenic or phosphorus to react with the zirconium as a precursor to depositing indium gallium arsenide, indium aluminum arsenide, or indium phosphide respectively. similarly, if the monocrystalline oxide accommodating buffer layer is an alkaline earth metal hafnate, the oxide layer can be capped by a thin layer of hafnium. The deposition of hafnium is followed by the deposition of arsenic or phosphorous to react with the hafnium as a precursor to the growth of an indium gallium arsenide, indium aluminum arsenide, or indium phosphide layer, respectively. In a similar manner, strontium titanate can be capped with a layer of strontium or strontium and oxygen and barium titanate can be capped with a layer of barium or barium and oxygen. Each of these depositions can be followed by the deposition of arsenic or phosphorus to react with the capping material to form a template for the deposition of a compound semiconductor material layer comprising indium gallium arsenide, indium aluminum arsenide, or indium phosphide.
FIG. 9 is a schematic block diagram of a prior art communication apparatus implemented in discrete components. In FIG. 9, a communication system 110 includes a user interface section 112, a network interface section 114 and a processing section 116.
User interface section 112 includes signal generating input devices 113, such as a camera (e.g., a video camera) 118, a temperature sensor 120 and a microphone 122. User interface section 112 further includes an analog-to-digital device 124 and a digital-to-analog device 126. In some prior art communication apparatuses, analog-to-digital device 124 and digital-to-analog device 126 may be embodied in a single device. Signal generating input devices 113 are coupled with an analog-to-digital device 124 in order that analog signals received from signal input generating devices 113 may be rendered in digital form for further processing. Analog-to-digital device 124 may be bypassed for a particular signal input generating device 113 if the particular device generates a digital signal. Digital signals representing signals received from individual signal input generating devices 113 are provided from analog-to-digital device 124 to processing section 116.
Processing section 116 includes a processing device 127. Processing device 127 preferably includes a general purpose computing device 128 and a digital signal processing device 130. The term general purpose processing device is employed herein to indicate any microprocessor, CPU (central processing unit) or other semiconductor device that is programmable to carry out a variety of functions.
Processing section 116 is connected with network interface section 114. Network interface section 114 includes an 110 (input/output) device 132. 110 device 132 may establish an appropriate interface between signals received from processing section 116 for transmission as optically coupled signals to other stations in a network (not shown). More than one interface device may be included in network interface section 114. For example, in FIG. 9, a radio transceiver device 134 is connected with I/O device 132 (alternatively, radio transceiver device 134 may be coupled directly with processing device 127). Radio transceiver device 134 provides an appropriate interface for system 110 to communicate with other network stations using RF (radio frequency) coupling.
Network interface section 114 also provides for reception of transmitted signals from other network stations (e.g., via optically coupled or RF coupled communications). Received signals are provided to processing section 116, and thence to digital-to-analog device 126 and user interface 112. In the case of received signals, user interface 112 employs user devices 135, such as a graphic display device 136, an audio speaker 138 or an indicating light 140 (e.g., an LED—light emitting diode). If a user device 135 is a digitally operated device, digital-to-analog device 126 may be bypassed and a digital signal may be provided directly to an individual user device 135 from processing section 116.
An important structural feature is emphasized in FIG. 9 in that various devices are indicated in FIG. 9 as being embodied in “chips”. This distinction is manifested in indications of an analog-to-digital chip 124, a digital-to-analog chip 126, a DSP chip 130, a CPU chip 128, an I/O chip 132 and a radio transceiver chip 134. This characterization is stressed in connection with FIG. 9 to indicate that prior art communication apparatuses of the sort represented by system 110 (FIG. 9) are implemented in discrete chips. The various chips are implemented in various topologies and technologies that are cost effective or otherwise appropriate for their respective operational parameters.
Accordingly, one device may be implemented in silicon, and another device may be implemented in a compound semiconductor material, such as gallium arsenide. An important point in this regard is that there are significant limitations with prior art technology in fabricating devices of such various topologies within one unitary package. Because there is no opportunity with prior art techniques for fabricating the various topologies on a single common substrate, the most “unitary” that a collection of several such devices may achieve is to be contained within a single enclosure, in a “unified packaging” of a plurality of chips in an attempt at a unitary structure.
Substrates employed for such unified packaging, such as alumina substrates, are oriented in a generally planar configuration upon which the various elements (i.e., devices) of the package are arrayed. Variances in the surface of such alumina substrates, measured substantially perpendicular to the plane of the substrate, are quite rough. Such roughness precludes alignment of devices to within micrometer tolerances of vertical displacement from a common plane. Such micrometer tolerances are required, for example, in crafting a unitary collection of optically communicating devices. The alternative available using rough-surfaced prior art substrates, such as alumina substrates, is to fabricate the various optical devices on separate substrates and employ fiber communications, with the attendant required I/O terminations at each end of each fiber connector. Fabricating semiconductor devices on a common substrate during the deposition or other processes used for creating the devices permits vertical placement tolerances on the order of micrometers. Such fine control of vertical placement allows ample latitude for direct optical alignment among devices on a common substrate.
Limitations in placement of devices adjacent each other are also problematic. That is, the spacing between adjacent devices, measured substantially parallel with the plane of the common substrate (e.g., alumina substrate), is limited by the accuracy of placement performed by pick-and-place machinery or similar tools used in manufacturing. As a result, the tolerance of such horizontal proximity placement is on the order of tenths of a millimeter (0.1 mm). Producing semiconductor devices on a common substrate during the deposition or other fabrication processes used for creating the devices involves horizontal placement tolerances on the order of micrometers—a difference by a factor of 100 over prior art production pick-and-place capabilities.
Being able to fabricate semiconductor devices on a common substrate during the deposition or other processes used for creating the devices permits creation of very small, compact devices. Several benefits are realized by such cohesive manufacturing techniques, including: manufacturing costs are reduced; fewer I/O devices are needed; circuit paths are shorter resulting in lower power requirements, lower radiation levels and less electromagnetic noise generation; fewer circuit elements liable to fail means that reliability is increased. Monolithic construction attainable with such unitary structures is more easily sealed against environmental influences. The benefits of such an improved semiconductor manufacturing capability at the fabrication (deposition or other process) level are especially significant in optical systems because various optical elements may be aligned within photolithographical tolerances—on the order of micrometers—to ensure alignment of optical elements such as waveguides, lasers, fibers and other elements. Connecting fibers and I/O terminations intermediate various optical elements are thereby eliminated.
Communication apparatuses constructed in such a process-level unified construction are better aligned, more compact, more reliable and robust, better protectable against environmental influences (including electromagnetic noise), and generally more versatile in their employability for particular applications because of their lower power requirements and smaller size.
FIG. 10 is a schematic block diagram in plan view of a communication apparatus constructed according to the teachings of the present invention. In FIG. 10, a communication apparatus 144 is arrayed upon a substrate 146. Substrate 146 is preferably a common single silicon substrate.
Apparatus 144 includes an input sensor 148 and an output element 150. Input sensor 148 and output element 150 are coupled with a converter circuit 152. Converter circuit 152 performs analog-to-digital conversion and digital-to-analog conversion as needed to present intelligible signals to various elements of communication apparatus 144.
Converter circuit 152 is coupled with a processing unit 154. Processing unit 154 preferably includes a digital signal processor (DSP) 156 and a central processing unit (CPU; e.g., a microprocessor) 158. Digital signal processor 156 and central processing unit 158 are interconnected in order that they may provide mutually supporting operations as required by communication apparatus 144.
Processing unit 154 is coupled with an I/O (input/output) unit 159. I/O unit 159 includes an I/O element 160 and optical elements 162, 164. I/O element 160 performs requisite interface functions to effect proper cooperation and communication between an output element and the remainder of communication apparatus 144. In the embodiment of the present invention illustrated in FIG. 10, I/O element 160 performs interface operations appropriate to facilitate operation of Communication apparatus 144 for reception of optical signals via one of optical elements 162, 164, and to effect transmission of optical signals via the other of optical elements 162, 164.
Respective elements of communication apparatus 144 are illustrated in FIG. 10 as physically displaced in order to facilitate understanding of the invention. In its preferred embodiment, respective elements of communication apparatus 144 are compactly arrayed upon substrate 146 according to the teachings of the present invention. Individual elements of communication apparatus 144 in FIG. 10 are substantially similar to selected elements of apparatus 110 (FIG. 9). For example, input sensor 148 (FIG. 10) may be any one or more of signal generating input devices 113 (FIG. 9), depending upon the particular employment intended for communication apparatus 144. Similarly, output element 150 (FIG. 10) may be any one or more of user devices 135 (FIG. 9), depending upon the particular employment contemplated for communication apparatus 144.
A significant difference between apparatus 110 (FIG. 9 and communication apparatus 144 (FIG. 10) is that the elements of communication apparatus 144 are monolithically fabricated upon a common substrate (preferably a silicon substrate). This feature of communication apparatus 144 is illustrated in FIG. 11.
FIG. 11 is a schematic block diagram in elevation view of the communication apparatus constructed according to the teachings of the present invention illustrated in FIG. 10. In FIG. 11, communication apparatus 144 is comprised of a plurality of elements arrayed upon a common silicon substrate 146. The elements are preferably monolithically fabricated as a unitary structure. Thus, input sensor 148, output element 150, converter circuit 152, digital signal processor 156, central processing unit 158 and I/O unit 159 are substantially intimately situated and connected upon substrate 146.
FIG. 12 is a perspective illustration of a representative communication product including the apparatus described in connection with FIGS. 10 and 11. In FIG. 12, communication apparatus 144 is contained as a unitary structure within an enclosure 145; as a result, only some aspects of communication apparatus 144 are visible in FIG. 12. Enclosure 145 provides power supply input nodes 147, 149 for providing power to apparatus 144 from outside enclosure 145, as by a battery or other power source (not shown). Output element 150 is accessible from outside enclosure 145. Input sensor 148 is accessible from outside enclosure 145. Optical elements 162, 164 are accessible from outside enclosure 145.
FIG. 13 is a schematic diagram illustrating dynamic network routing. In FIG. 13, a plurality of devices D1, D2, D3, D4, D5, D6, D7, D8 are communication capable. Preferably, devices D1, D2, D3, D4, D5, D6, D7, D8 are portable communication devices fabricated according to the teachings of the present invention. Each of devices D1, D2, D3, D4, D5, D6, D7, D8 may communicate with another device, unless there is a communication obstruction of some sort. Such a communication obstruction may be, for example, a large building or a passing truck or bus between devices. In the event that two stations are precluded from communicating, as is the case in FIG. 13 with devices D7, D6, there may be an ad hoc network connection established between device D7 and device D6 via devices D8, D3, D5. A communication apparatus having a capability to poll devices with which one has communications and dynamically establish an ad hoc network communication connection with a desired remote station is a preferred embodiment of the present invention.
FIG. 14 is a flow chart illustrating the preferred embodiment of the method of the present invention. The method illustrated in FIG. 14 is appropriate for employment in the milieu described in connection with FIG. 13. In FIG. 14, a method 170 begins with powering up a home (i.e., one's own) communication device (e.g., communication apparatus 144; FIGS. 10-12), as indicated by a block 172. The method continues by the home device determining its own input sensor capabilities and its own output element capabilities, as indicated by a block 174. That is, the home device determines whether it has, for example, a microphone or a temperature sensor or some other input sensor or sensors. The home device also, for example, determines its output elements, such as an audio speaker, a graphic display, or some other user interface.
Next, the home device polls other devices to ascertain their respective capabilities, including their sensor capabilities, their output capabilities and their networking capabilities, as indicated by a block 176. Among the capabilities ascertained by the polling according to block 176 is the iterative networking capacity of each device polled. That is, to how many subsequent stations, or devices, can a respective device manage network communications. By way of example, in FIG. 13, device D8 manages network communications to three iterations to establish the ad hoc network enabling device D7 to communicate with device D6.
The method continues by posing a query whether the polling operation is complete, as indicated by a query block 178. If the polling operation is not complete, the method proceeds according to “NO” response line 180 and polling continues according to block 176. If the polling operation is complete, the method proceeds according to “YES” response line 182, and the method continues as the home device notifies other devices of its own capabilities, as indicated by a block 184.
Next a query is posed whether the home device has a preset role in its participation in networking operations, as indicated by a query block 186. This query is to determine how the home device is to participate during communications. For example, the home device may be relaying information in participating in an ad hoc network, or the home device may be originating message traffic, or some other role may pertain.
If the home device does not have a preset role, the method proceeds according to “NO” response line 188 and a role is requested, as indicated by a block 190. Another query is posed whether the home device has received a role, as indicated by a query block 192. If the home device has not received a role, the method proceeds according to “NO” response line 194 and a request for a role is repeated according to block 190. If the home device has received a role as a result of the request according to block 190, the method proceeds according to “YES” response line 196 and other devices are notified of the role of the home device, as indicated by a block 198. If the role of the home device is preset, the method proceeds from query block 186 according to “YES” response line 197 directly to block 198, and other devices are notified of the role of the home device.
The method continues by determining a preferred (i.e., primary) network route and alternative (i.e., one or more secondary) networking routes, as indicated by a block 200. At this point in the method, the home device is ready to participate in communication operations, and input is received by the home device from its sensor input, as indicated by a block 202. The method continues with the conversion of the received sensor input signal into a digital signal (if necessary) as indicated by a block 204. The digitized signal is transmitted to an adjacent device, at an adjacent network locus, as indicated by a block 206. The determination of which is the next network locus to which the transmission is made is preferably based upon the role and route determinations ascertained earlier in connection with blocks 184 through 200.
The method provides for periodic testing of the network routes being used, as indicated by a block 208. A query is posed following a route testing whether the routes should be changed, as indicated by a query block 210. If it is determined (according to some predetermined criteria) that the routes should not be changed, the method proceeds according to “NO” response line 212 and a subsequent sensor input is received according to block 202. If it is determined that the routes should be changed, the method proceeds according to “YES” response line 214 and the method continues at block 176.
In the foregoing specification, the invention has been described with reference to specific embodiments. However, one of ordinary skill in the art appreciates that various modifications and changes can be made without departing from the scope of the present invention as set forth in the claims below. Accordingly, the specification and FIGS. are to be regarded in an illustrative rather than a restrictive sense, and all such modifications are intended to be included within the scope of present invention.
Benefits, other advantages, and solutions to problems have been described above with regard to specific embodiments. However, the benefits, advantages, solutions to problems, and any element(s) that may cause any benefit, advantage, or solution to occur or become more pronounced are not to be construed as a critical, required, or essential features or elements of any or all the claims. As used herein, the terms “comprises,” “comprising,” or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US3766370||May 14, 1971||Oct 16, 1973||Hewlett Packard Co||Elementary floating point cordic function processor and shifter|
|US3802967||Aug 27, 1971||Apr 9, 1974||Rca Corp||Iii-v compound on insulating substrate and its preparation and use|
|US4006989||Dec 11, 1974||Feb 8, 1977||Raytheon Company||Laser gyroscope|
|US4174422||Dec 30, 1977||Nov 13, 1979||International Business Machines Corporation||Growing epitaxial films when the misfit between film and substrate is large|
|US4284329||Jun 25, 1979||Aug 18, 1981||Raytheon Company||Laser gyroscope system|
|US4404265||Apr 7, 1978||Sep 13, 1983||Rockwell International Corporation||Epitaxial composite and method of making|
|US4482906||Jun 30, 1982||Nov 13, 1984||International Business Machines Corporation||Gallium aluminum arsenide integrated circuit structure using germanium|
|US4484332||Jun 2, 1982||Nov 20, 1984||The United States Of America As Represented By The Secretary Of The Air Force||Multiple double heterojunction buried laser device|
|US4523211||Mar 8, 1983||Jun 11, 1985||Futaba Denshi Kogyo Kabushiki Kaisha||Semiconductor device|
|US4661176||Feb 27, 1985||Apr 28, 1987||The United States Of America As Represented By The Secretary Of The Air Force||Process for improving the quality of epitaxial silicon films grown on insulating substrates utilizing oxygen ion conductor substrates|
|US4777613||Apr 1, 1986||Oct 11, 1988||Motorola Inc.||Floating point numeric data processor|
|US4793872||Mar 4, 1987||Dec 27, 1988||Thomson-Csf||III-V Compound heteroepitaxial 3-D semiconductor structures utilizing superlattices|
|US4802182||Nov 5, 1987||Jan 31, 1989||Xerox Corporation||Monolithic two dimensional waveguide coupled cavity laser/modulator|
|US4815084||May 20, 1987||Mar 21, 1989||Spectra Diode Laboratories, Inc.||Semiconductor laser with integrated optical elements|
|US4846926||Sep 3, 1987||Jul 11, 1989||Ford Aerospace & Communications Corporation||HcCdTe epitaxially grown on crystalline support|
|US4855249||Mar 16, 1988||Aug 8, 1989||Nagoya University||Process for growing III-V compound semiconductors on sapphire using a buffer layer|
|US4876219||Mar 3, 1989||Oct 24, 1989||Fujitsu Limited||Method of forming a heteroepitaxial semiconductor thin film using amorphous buffer layers|
|US4882300||Oct 6, 1988||Nov 21, 1989||Agency Of Industrial Science And Technology||Method of forming single crystalline magnesia spinel film|
|US4891091||Jun 8, 1987||Jan 2, 1990||Gte Laboratories Incorporated||Method of epitaxially growing compound semiconductor materials|
|US4896194||Jul 8, 1988||Jan 23, 1990||Nec Corporation||Semiconductor device having an integrated circuit formed on a compound semiconductor layer|
|US4912087||Apr 15, 1988||Mar 27, 1990||Ford Motor Company||Rapid thermal annealing of superconducting oxide precursor films on Si and SiO2 substrates|
|US4928154||Mar 20, 1989||May 22, 1990||Daido Tokushuko Kabushiki Kaisha||Epitaxial gallium arsenide semiconductor on silicon substrate with gallium phosphide and superlattice intermediate layers|
|US4963508||Feb 22, 1990||Oct 16, 1990||Daido Tokushuko Kabushiki Kaisha||Method of making an epitaxial gallium arsenide semiconductor wafer using a strained layer superlattice|
|US4963949||Sep 30, 1988||Oct 16, 1990||The United States Of America As Represented Of The United States Department Of Energy||Substrate structures for InP-based devices|
|US4999842||Mar 1, 1989||Mar 12, 1991||At&T Bell Laboratories||Quantum well vertical cavity laser|
|US5060031||Sep 18, 1990||Oct 22, 1991||Motorola, Inc||Complementary heterojunction field effect transistor with an anisotype N+ ga-channel devices|
|US5063166||Apr 9, 1990||Nov 5, 1991||Sri International||Method of forming a low dislocation density semiconductor device|
|US5081062||Jun 14, 1989||Jan 14, 1992||Prahalad Vasudev||Monolithic integration of silicon on insulator and gallium arsenide semiconductor technologies|
|US5116461||Apr 22, 1991||May 26, 1992||Motorola, Inc.||Method for fabricating an angled diffraction grating|
|US5127067||Sep 10, 1990||Jun 30, 1992||Westinghouse Electric Corp.||Local area network with star topology and ring protocol|
|US5141894||Jul 20, 1990||Aug 25, 1992||Thomson-Csf||Method for the manufacture, by epitaxy, of monocrystalline layers of materials with different lattice parameters|
|US5144409||Nov 16, 1990||Sep 1, 1992||Yale University||Isotopically enriched semiconductor devices|
|US5155658||Mar 5, 1992||Oct 13, 1992||Bell Communications Research, Inc.||Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films|
|US5159413||Dec 11, 1990||Oct 27, 1992||Eaton Corporation||Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate|
|US5173474||Mar 11, 1991||Dec 22, 1992||Xerox Corporation||Silicon substrate having an epitaxial superconducting layer thereon and method of making same|
|US5221367||Aug 3, 1988||Jun 22, 1993||International Business Machines, Corp.||Strained defect-free epitaxial mismatched heterostructures and method of fabrication|
|US5225031||Apr 10, 1991||Jul 6, 1993||Martin Marietta Energy Systems, Inc.||Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process|
|US5248564||Dec 9, 1992||Sep 28, 1993||Bell Communications Research, Inc.||C-axis perovskite thin films grown on silicon dioxide|
|US5270298||Aug 4, 1992||Dec 14, 1993||Bell Communications Research, Inc.||Cubic metal oxide thin film epitaxially grown on silicon|
|US5286985||Dec 22, 1992||Feb 15, 1994||Texas Instruments Incorporated||Interface circuit operable to perform level shifting between a first type of device and a second type of device|
|US5293050||Mar 25, 1993||Mar 8, 1994||International Business Machines Corporation||Semiconductor quantum dot light emitting/detecting devices|
|US5310707||Sep 28, 1992||May 10, 1994||Superconductivity Research Laboratory International||Substrate material for the preparation of oxide superconductors|
|US5326721||May 1, 1992||Jul 5, 1994||Texas Instruments Incorporated||Method of fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer|
|US5356831||Oct 28, 1992||Oct 18, 1994||Eaton Corporation||Method of making a monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate|
|US5358925||Aug 10, 1992||Oct 25, 1994||Board Of Trustees Of The Leland Stanford Junior University||Silicon substrate having YSZ epitaxial barrier layer and an epitaxial superconducting layer|
|US5371734 *||Jan 29, 1993||Dec 6, 1994||Digital Ocean, Inc.||Medium access control protocol for wireless network|
|US5391515||Jun 17, 1992||Feb 21, 1995||Texas Instruments Incorporated||Capped anneal|
|US5393352||Sep 27, 1993||Feb 28, 1995||Texas Instruments Incorporated||Pb/Bi-containing high-dielectric constant oxides using a non-P/Bi-containing perovskite as a buffer layer|
|US5404581||Jul 23, 1992||Apr 4, 1995||Nec Corporation||Microwave . millimeter wave transmitting and receiving module|
|US5418216||May 15, 1992||May 23, 1995||Fork; David K.||Superconducting thin films on epitaxial magnesium oxide grown on silicon|
|US5418389||Nov 9, 1993||May 23, 1995||Mitsubishi Chemical Corporation||Field-effect transistor with perovskite oxide channel|
|US5436759||Jun 14, 1994||Jul 25, 1995||The Regents Of The University Of California||Cross-talk free, low-noise optical amplifier|
|US5442191||Jul 5, 1994||Aug 15, 1995||Yale University||Isotopically enriched semiconductor devices|
|US5444016||Jun 25, 1993||Aug 22, 1995||Abrokwah; Jonathan K.||Method of making ohmic contacts to a complementary III-V semiconductor device|
|US5450812||Dec 8, 1993||Sep 19, 1995||Martin Marietta Energy Systems, Inc.||Process for growing a film epitaxially upon an oxide surface and structures formed with the process|
|US5478653||Apr 4, 1994||Dec 26, 1995||Guenzer; Charles S.||Bismuth titanate as a template layer for growth of crystallographically oriented silicon|
|US5480829||Jun 25, 1993||Jan 2, 1996||Motorola, Inc.||Method of making a III-V complementary heterostructure device with compatible non-gold ohmic contacts|
|US5482003||Jul 6, 1993||Jan 9, 1996||Martin Marietta Energy Systems, Inc.||Process for depositing epitaxial alkaline earth oxide onto a substrate and structures prepared with the process|
|US5511238 *||Jun 26, 1987||Apr 23, 1996||Texas Instruments Incorporated||Monolithic microwave transmitter/receiver|
|US5514484||Oct 19, 1993||May 7, 1996||Fuji Xerox Co., Ltd.||Oriented ferroelectric thin film|
|US5528414||May 5, 1994||Jun 18, 1996||Lots Technology||Two dimensional electro-optic modulator array|
|US5556463||Jun 5, 1995||Sep 17, 1996||Guenzer; Charles S.||Crystallographically oriented growth of silicon over a glassy substrate|
|US5576879||Oct 19, 1994||Nov 19, 1996||Fuji Xerox Co., Ltd.||Composite optical modulator|
|US5588995||May 3, 1995||Dec 31, 1996||Midwest Research Institute||System for monitoring the growth of crystalline films on stationary substrates|
|US5606184||May 4, 1995||Feb 25, 1997||Motorola, Inc.||Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making|
|US5614739||Jun 2, 1995||Mar 25, 1997||Motorola||HIGFET and method|
|US5640267||Mar 1, 1995||Jun 17, 1997||Sharp Kabushiki Kaisha||Optical apparatus|
|US5670798||Mar 29, 1995||Sep 23, 1997||North Carolina State University||Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same|
|US5674366||Jun 7, 1995||Oct 7, 1997||Matsushita Electric Industrial Co., Ltd.||Method and apparatus for fabrication of dielectric thin film|
|US5729394||Jan 24, 1996||Mar 17, 1998||Hewlett-Packard Company||Multi-direction optical data port|
|US5729641||May 30, 1996||Mar 17, 1998||Sdl, Inc.||Optical device employing edge-coupled waveguide geometry|
|US5731220||Jun 7, 1995||Mar 24, 1998||Texas Instruments Incorporated||Method of making barium strontium titanate (BST) thin film by erbium donor doping|
|US5733641||May 31, 1996||Mar 31, 1998||Xerox Corporation||Buffered substrate for semiconductor devices|
|US5735949||Sep 13, 1991||Apr 7, 1998||Forschungszentrum Julich Gmbh||Method of producing electronic, electrooptical and optical components|
|US5741724||Dec 27, 1996||Apr 21, 1998||Motorola||Method of growing gallium nitride on a spinel substrate|
|US5764676||Sep 26, 1996||Jun 9, 1998||Xerox Corporation||Transversely injected multiple wavelength diode laser array formed by layer disordering|
|US5777762||Sep 24, 1997||Jul 7, 1998||Canon Kabushiki Kaisha||Network system for performing bidirectional transmission, and node device and transmission control method used in the system|
|US5778018||Sep 15, 1995||Jul 7, 1998||Nec Corporation||VCSELs (vertical-cavity surface emitting lasers) and VCSEL-based devices|
|US5778116||Jan 23, 1997||Jul 7, 1998||Tomich; John L.||Photonic home area network fiber/power insertion apparatus|
|US5790583||May 24, 1996||Aug 4, 1998||Northwestern University||Photonic-well Microcavity light emitting devices|
|US5801105||Jun 14, 1996||Sep 1, 1998||Tdk Corporation||Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film|
|US5810923||May 10, 1996||Sep 22, 1998||Tdk Corporation||Method for forming oxide thin film and the treatment of silicon substrate|
|US5825799||May 25, 1995||Oct 20, 1998||Northwestern University||Microcavity semiconductor laser|
|US5828080||Aug 17, 1995||Oct 27, 1998||Tdk Corporation||Oxide thin film, electronic device substrate and electronic device|
|US5830270||Aug 5, 1996||Nov 3, 1998||Lockheed Martin Energy Systems, Inc.||CaTiO3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class|
|US5846846 *||Nov 20, 1995||Dec 8, 1998||Electronics And Telecommunications Research Institute||Method for making a superconducting field-effect device with grain boundary channel|
|US5857049||May 5, 1997||Jan 5, 1999||Lucent Technologies, Inc.,||Precision alignment of optoelectronic devices|
|US5858814||Dec 12, 1996||Jan 12, 1999||Lucent Technologies Inc.||Hybrid chip and method therefor|
|US5861966||Dec 27, 1995||Jan 19, 1999||Nynex Science & Technology, Inc.||Broad band optical fiber telecommunications network|
|US5874860||Dec 4, 1996||Feb 23, 1999||Motorola, Inc.||High frequency amplifier and control|
|US5883996||Jul 2, 1997||Mar 16, 1999||Motorola, Inc.||Electronic component for aligning a light transmitting structure|
|US5912068||Dec 5, 1996||Jun 15, 1999||The Regents Of The University Of California||Epitaxial oxides on amorphous SiO2 on single crystal silicon|
|US5926496||May 20, 1997||Jul 20, 1999||Northwestern University||Semiconductor micro-resonator device|
|US5937285||May 23, 1997||Aug 10, 1999||Motorola, Inc.||Method of fabricating submicron FETs with low temperature group III-V material|
|US5981400||Sep 18, 1997||Nov 9, 1999||Cornell Research Foundation, Inc.||Compliant universal substrate for epitaxial growth|
|US5987011 *||Aug 30, 1996||Nov 16, 1999||Chai-Keong Toh||Routing method for Ad-Hoc mobile networks|
|US5990495||Jul 18, 1996||Nov 23, 1999||Kabushiki Kaisha Toshiba||Semiconductor light-emitting element and method for manufacturing the same|
|US5995359||May 19, 1997||Nov 30, 1999||U.S. Philips Corporation||Electronic component and method of manufacturing same|
|US6002375||Sep 2, 1997||Dec 14, 1999||Motorola, Inc.||Multi-substrate radio-frequency circuit|
|US6008762||Mar 31, 1997||Dec 28, 1999||Qualcomm Incorporated||Folded quarter-wave patch antenna|
|US6020222||Dec 16, 1997||Feb 1, 2000||Advanced Micro Devices, Inc.||Silicon oxide insulator (SOI) semiconductor having selectively linked body|
|US6028853 *||Jun 6, 1997||Feb 22, 2000||Telefonaktiebolaget Lm Ericsson||Method and arrangement for radio communication|
|US6045626||Jun 23, 1998||Apr 4, 2000||Tdk Corporation||Substrate structures for electronic devices|
|US6049702 *||Dec 4, 1997||Apr 11, 2000||Rockwell Science Center, Llc||Integrated passive transceiver section|
|US6055179||May 17, 1999||Apr 25, 2000||Canon Kk||Memory device utilizing giant magnetoresistance effect|
|US6058131||Nov 17, 1997||May 2, 2000||E-Tek Dynamics, Inc.||Wavelength stabilization of laser source using fiber Bragg grating feedback|
|US6064078||May 22, 1998||May 16, 2000||Xerox Corporation||Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities|
|US6064092||Apr 13, 1999||May 16, 2000||Samsung Electronics Co., Ltd.||Semiconductor-on-insulator substrates containing electrically insulating mesas|
|US6093242 *||Jul 30, 1998||Jul 25, 2000||Ut-Battelle, Llc||Anisotropy-based crystalline oxide-on-semiconductor material|
|US6096584||Mar 12, 1998||Aug 1, 2000||International Business Machines Corporation||Silicon-on-insulator and CMOS-on-SOI double film fabrication process with a coplanar silicon and isolation layer and adding a second silicon layer on one region|
|US6103008||Jul 30, 1998||Aug 15, 2000||Ut-Battelle, Llc||Silicon-integrated thin-film structure for electro-optic applications|
|US6107653||Jun 23, 1998||Aug 22, 2000||Massachusetts Institute Of Technology||Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization|
|US6113690||Jun 8, 1998||Sep 5, 2000||Motorola, Inc.||Method of preparing crystalline alkaline earth metal oxides on a Si substrate|
|US6114996||Mar 31, 1997||Sep 5, 2000||Qualcomm Incorporated||Increased bandwidth patch antenna|
|US6121642||Jul 20, 1998||Sep 19, 2000||International Business Machines Corporation||Junction mott transition field effect transistor (JMTFET) and switch for logic and memory applications|
|US6128178||Jul 20, 1998||Oct 3, 2000||International Business Machines Corporation||Very thin film capacitor for dynamic random access memory (DRAM)|
|US6136666||Dec 30, 1998||Oct 24, 2000||Hyundai Electronics Industries Co., Ltd.||Method for fabricating silicon-on-insulator wafer|
|US6137603||Oct 15, 1997||Oct 24, 2000||Nec Corporation||Optical network, optical division and insertion node and recovery system from network failure|
|US6143072||Apr 6, 1999||Nov 7, 2000||Ut-Battelle, Llc||Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate|
|US6146906||Sep 16, 1999||Nov 14, 2000||Nec Corporation||DC magnetron sputtering method for manufacturing electrode of ferroelectric capacitor|
|US6153454 *||Jul 9, 1997||Nov 28, 2000||Advanced Micro Devices, Inc.||Convex device with selectively doped channel|
|US6173474||Jul 14, 1999||Jan 16, 2001||Fantom Technologies Inc.||Construction of a vacuum cleaner head|
|US6174755||Apr 29, 1999||Jan 16, 2001||Micron Technology, Inc.||Methods of forming SOI insulator layers and methods of forming transistor devices|
|US6180252||Aug 15, 1997||Jan 30, 2001||Energenius, Inc.||Semiconductor supercapacitor system, method for making same and articles produced therefrom|
|US6180486||Feb 16, 1999||Jan 30, 2001||International Business Machines Corporation||Process of fabricating planar and densely patterned silicon-on-insulator structure|
|US6184144||Oct 6, 1998||Feb 6, 2001||Cornell Research Foundation, Inc.||Methods for growing defect-free heteroepitaxial layers|
|US6222654||Aug 4, 1997||Apr 24, 2001||Lucent Technologies, Inc.||Optical node system for a ring architecture and method thereof|
|US6248621 *||Oct 20, 1999||Jun 19, 2001||Texas Instruments Incorporated||Method of growing high-quality crystalline silicon quantum wells for RTD structures|
|US6268269 *||Dec 30, 1999||Jul 31, 2001||United Microelectronics Corp.||Method for fabricating an oxide layer on silicon with carbon ions introduced at the silicon/oxide interface in order to reduce hot carrier effects|
|EP0250171B1||Jun 12, 1987||Nov 11, 1992||Massachusetts Institute Of Technology||Compound semiconductor devices|
|EP0342937B1||May 16, 1989||Jul 27, 1994||Fujitsu Limited||Manufacturing a semiconductor wafer having a III-V group semiconductor compound layer on a silicon substrate|
|EP0455526A1||Apr 3, 1991||Nov 6, 1991||Thomson-Csf||Process for adaptation between two crystallized semiconductor materials, and semiconductor device|
|EP0514018A2||Apr 16, 1992||Nov 19, 1992||AT&T Corp.||Method for making low defect density semiconductor heterostructure and devices made thereby|
|EP0602568A3||Dec 10, 1993||Dec 28, 1994||Eastman Kodak Co||A multilayer structure having a (111)-oriented buffer layer.|
|EP0607435B1||Aug 7, 1992||Nov 3, 1999||Asahi Kasei Kogyo Kabushiki Kaisha||Nitride based semiconductor device and manufacture thereof|
|EP0999600A2||Aug 26, 1999||May 10, 2000||Lockheed Martin Corporation||Multi-band infrared photodetector|
|EP1001468A1||Nov 2, 1999||May 17, 2000||Lucent Technologies Inc.||Rare earth oxide layer on a GaAs- or GaN-based semiconductor body|
|GB1319311A||Title not available|
|GB2335792B||Title not available|
|JP5288354B2||Title not available|
|JP5587424B2||Title not available|
|JP6232126A||Title not available|
|JP6291299A||Title not available|
|JP6334168A||Title not available|
|JP6334994A||Title not available|
|JP10321943A||Title not available|
|JP11238683A||Title not available|
|JP11260835A||Title not available|
|JP54134554U||Title not available|
|JP61108187A||Title not available|
|JP63131104A||Title not available|
|JP63198365U||Title not available|
|JP63278629A||Title not available|
|JPH0548072A||Title not available|
|JPH02306680A||Title not available|
|JPH11260835A||Title not available|
|JPS6334994A||Title not available|
|JPS61108187A||Title not available|
|JPS62216600A||Title not available|
|JPS63131104A||Title not available|
|1||"Epitaxial 3d Structure Using Mixed Spinels," IBM Technical Bulletin, vol. 30, No. 3, Aug. 1987, p. 1271.|
|2||"GaInAs Superconducting FET," IBM Technical Bulletin, vol. 36, No. 8, Aug. 1993, p. 655-656.|
|3||"Integration of GaAs on Si Using a Spinel Buffer Layer", IBM Technical Bulletin, vol. 30, No. 6, Nov. 1987, p. 365.|
|4||"Technical Analysis of Qualcomm QCP-800 Portable Cellular Phone (Transmitter Circuitry)," Talus Corporation, Qualcomm QCP-800 Technical Analysis Report, Dec. 10, 1996, pp. 5-8.|
|5||A. Mansingh et al., "Surface Acoustic Wave Propagation in PZT/YBCO/SrTiO3 and PbTiO3/YBCO/SrTiO3 Epitaxial Heterostructures," Ferroelectric, vol. 224, pp. 275-282, 1999.|
|6||Antonio Mecozzi, et al.; "The Roles of Semiconductor Optical Amplifiers in Optical Newtorks"; Optics & Photonics News; Mar. 2001; pp. 37-42.|
|7||B.A. Block, et al; "Photoluminescence properties of Er3-doped BaTiO3 thin films"; Appl. Phys. Lett. 65 (1), Jul. 4, 1994, pp. 25-27.|
|8||Bean et al., "Silicon Molecular Beam Epitaxy," Materials Research Symposium Proceedings, vol. 220, pp. 595-600, Apr. 29-May 3, 1991.|
|9||Bean et al., "Silicon Molecular Beam Epitaxy," Materials Research Symposium Proceedings, vol. 220, pp. 595-600, Apr. 29—May 3, 1991.|
|10||Brian A. Floyd, et al.; "The projected Power Consumption of a Wireless Clock Distribution System and Comparison to Conventional Distribution Systems"; IEEE, 1999; pp. IITC99-249-IITC99-250.|
|11||Brown et al., "Photodetectors: Materials and Devices II," Intn. Society for Optical Engineering, vol. 2999, pp. 211-214.|
|12||Bruley et al., "Nanostructure and Chemistry of a (100)MgO/(100) GaAs Interface," Appl. Phys Lett, 65(5), Aug. 1994, pp. 564-566.|
|13||Carlin et al., Impact of GaAs Buffer Thickness on Electronic Quality of GaAs Grown on Graded Ge/GeSi/Si Substrates, Appl. Phys. Letter, vol. 76, No. 14, Apr. 2000, pp. 1884-1886.|
|14||Choi et al., "Heteroepitaxy on Silicon: Fundamentals, Structure, and Devices," Mat. Res. Soc., Symposium Proceedings, vol. 116, pp. 369-374, Apr. 5-8, 1988.|
|15||Clem et al., "Investigation of PZT//LSCO//Pt//Aerogel Thin Film Composites for Uncooled Pyroelectric IR Detectors," Mat. Res. Soc. Symp. Proc., vol. 541, pp. 661-666, 1999.|
|16||Cuomo et al., "Substrate Effect on the Superconductivity of YBa2Cu3O7 Thin Films," AIP Conference 1988, pp. 141-148.|
|17||D.A. Francis, et al.; "A single-chip linear optical amplifier"; OFC, 2001; Mar. 17-22, 2001.|
|18||D.E. Aspnes, et al.; "Steps on (001) silicon surfaces"; J. Vac. Sci. Technol. B, vol. 5, No. 4, Jul./Aug. 1987; pp. 939-944.|
|19||D.M. Newns, et al.; "Mott transition field effect transistor"; Applied Physics Letters, vol. 73, No. 6, Aug. 10, 1998; pp. 780-782.|
|20||Douglas B. Chrisey, et al; Pulsed Laser Deposition of Thin Films; pp. 273-285.|
|21||F.M. Buffer, et al.; "Strain-dependence of electron transport in bulk Si and deep-submicron MOSFET's" Computatural Electronics, 2000, Book of Abstracts, IWCE Glasgow 2000, 7th Int'l Workshop on, 2000; pp. 64-65.|
|22||Farrow et al., "Heteroepitaxy of Dissimilar Materials," Mat. Res. Soc. Symposium Proceedings, vol. 221, pp. 29-34, Apr. 29-May 2, 1991.|
|23||Farrow et al., "Heteroepitaxy of Dissimilar Materials," Mat. Res. Soc. Symposium Proceedings, vol. 221, pp. 29-34, Apr. 29—May 2, 1991.|
|24||Fork et al., "Epitaxial MgO On Si(001) for Y-Ba-Cu-O Thin Film Growth by Pulsed Laser Deposition," Appl. Phys Lett., 58(20), May 20, 1991, pp. 2294-2296.|
|25||G. H. Jin, et al.; "PLZT Film Waveguide Mach-Zehnder Electrooptic Modulator"; Journal of Lightwave Technology, vol. 18, No. 6. Jun. 2000; pp. 807-812.|
|26||G. Passiopoulos, et al.; "V-Band Single Chip, Direct Carrier BPSK Modulation Transmitter With Integrated Patch Antenna"; 1998 IEEE MTT-S Digest; pp. 305-308.|
|27||Gentex Corporate Website; Photoelectric Smoke Detectors-How They Work; 2001.|
|28||Gentex Corporate Website; Photoelectric Smoke Detectors—How They Work; 2001.|
|29||Gunapala et al., "Bound-To-Quasi-Bound Quantum-Well Infrared Photodetectors," NASA Tech Brief, vol. 22, No. 9, Sep. 1998.|
|30||H. Nagata, "A Preliminary Consideration of the Growth Behaviour of CeO2, SrTiO3 and SrVO3 Films on Si Substrate," Thin Solid Films, 224, 1993, pp. 1-3.|
|31||H. Shichijo, et al.; "GaAs MESFET and Si CMOS Cointegration and Circuit Techniques"; 1988 IEEE; GaAs IC Symposium-239-242.|
|32||H. Shichijo, et al.; "GaAs MESFET and Si CMOS Cointegration and Circuit Techniques"; 1988 IEEE; GaAs IC Symposium—239-242.|
|33||H. Shichijo, et al.; "Monolithic Process for Co-Integration of GaAs and Silicon Circuits"; 1988 IEEE; pp. 778-781.|
|34||Himpsel et al., "Dialectrics on Semiconductors," Materials Science and Engineering, B1(1988), pp. 9-13.|
|35||Hisashi Shichijo, et al.; "Co-Integration of GaAs MESFET and Si CMOS Circuits"; IEEE Electron Device Letters, vol. 9, No. 9, Sep. 1988; pp. 444-446.|
|36||J.F. Kang, et al., "Epitaxial Growth of CeO2(100) Films on Si(100) Substrates by Dual Ion Beams Reactive Sputtering," Solid State Communications, vol. 108, No. 4, pp. 225-227, 1998.|
|37||J.K. Abrokwah, et al.; "A Manufacturable Complementary GaAs Process"; GaAs IC Symposium, IEEE, 1993; pp. 127-130.|
|38||J.K. Abrokwah, et al.; "A Manufacturable High-Speed Low-Power Complementary GaAs Process"; Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, Yokohama, 1994, pp. 592-594.|
|39||James Schellenberg, et al.; "Low-Loss, Planar Monolithic Baluns for K/Ka-Band Applications"; 1999 IEEE MTT-S Digest; pp. 1733-1736.|
|40||Jayshri Sabarinathat, et al.; "Submicron three-dimensional infrared GaAs/AIxOy-based photonic crystal using single-step epitaxial growth"; Applied Physics Letters, vol. 78, No. 20, May 14, 2001; pp. 3024-3026.|
|41||Jeffrey B. Casady, et al.; "A Hybrid 6H-SiC Temperature Sensor Operational from 25° C to 500° C"; IEEE Transactions On Components, Packaging, And Manufacturing Technology-Part A, vol. 19, No. 3, Sep. 1996; pp. 416-422.|
|42||Jeffrey B. Casady, et al.; "A Hybrid 6H-SiC Temperature Sensor Operational from 25° C to 500° C"; IEEE Transactions On Components, Packaging, And Manufacturing Technology—Part A, vol. 19, No. 3, Sep. 1996; pp. 416-422.|
|43||Jo-Ey Wong, et al.; "An Electrostatically-Actuated Mems Switch For Power Applications"; IEEE, 2000; pp. 633-638.|
|44||John D. Joannopoulos, et al.; "Molding the Flow of Light"; Photonic Crystals; Princeton University Press, 1995.|
|45||K. Sreenivas et al., "Surface Acoustic Wave Propagation on Lead Zirconate Titanate Thin Films," Appl. Phys. Lett. 52 (9), Feb. 29, 1998, pp. 709-711.|
|46||Kado et al., "Heteroepitaxial Growth of SrO Films on Si Substrates," J. Appl. Phys., 61(6), Mar. 15, 1987, pp. 2398-2400.|
|47||Kihong Kim, et al."On-Chip Wireless Interconnection with Integrated Antennas"; 2000 IEEE; pp. 20.2.1-20.3.4.|
|48||Kurt Eisenbeiser, et al.; "Metamorphic InAlAs/InGaAs Enhancement Mode HEMT's on GaAs Substrates"; IEEE Electron Device Letters, vol. 20, No. 10, Oct. 1999; pp. 507-509.|
|49||Leonard J. Brillson; "Stable and Epitaxial Contacts to III-V Compound Semiconductors"; Semiconductors Fundamentals and Technology; Noyles Publications, 1993; pp. 67-150.|
|50||Li et al., "Epitaxial La 0.67Sr0.33MnO3 Magnetic Tunnel Junctions," J. Appl. Phys. 81(8), Apr. 15, 1997, pp. 5509-5511.|
|51||Lucent Technologies, Inc. "Arrayed Waveguide Grating Multiplexer/Demultiplexer"; Jan. 2000; 4 pages.|
|52||M. Rotter et al., "Nonlinear Acoustoelectric Interactions in GaAs/LiNbO3 Structures", Applied Physics Letters, vol. 75(7), Aug. 16, 1999, pp. 965-967.|
|53||M. Rotter et al., "Single Chip Fused Hybrids for Acousto-Electric and Acousto-Optic Applications," 1997 Applied Physics Letters, vol. 70(16), Apr. 21, 1997, pp. 2097-2099.|
|54||Mau-Chung Frank Chang, et al.; "RF/Wireless Interconnect for Inter- and Intra-Chip Communications"; Proceedings of the IEEE, vol. 89, No. 4, Apr. 2001; pp. 456-466.|
|55||McKee et al., "BaSi2 and Thin Film Alkaline Earth Silicides on Silicon," Appl. Phys. Lett., 63 (20), Nov. 1993, pp. 2818-2820.|
|56||McKee et al., "Crystalline Oxides on Silicon: The First Five Monolayers," Physical Review Letters, vol. 81, No. 14, Oct. 1998, pp. 3014-3017.|
|57||McKee et al., "Molecular Beam Epitaxy Growth of Epitaxial Barium Silicide, Barium Oxide, and Barium Titanate on Silicon," 1991 American Institute of Physics, pp. 782-784, Aug. 13, 1991.|
|58||McKee et al., "Surface Structures and the Orthorhombic Transformation of Thin Film BaSi2 on Silicon," Mat. Res. Soc. Symp. Proc., vol. 221, pp. 131-136.|
|59||McKee et al., "The MBE Growth and Optical Quality of BaTiO3 and SrTiO3 Thin Films on MgO," Mat. Res. Soc. Symp. Proc., vol. 341, Apr. 1994, pp. 309-314.|
|60||Mikami et al., "Formation of Si Epi/MgO-Al2O3Epi./SiO3/Si and Its Epitaxial Film Quality," Fundamental Research Laboratories and Microelectronics Laboratories, pp. 31-34, 1983.|
|61||Moon et al., "Growth of Crystalline SrTiO3 Films on Si Substrates Using Thin Fluoride Buffer Layers and Their Electrical Properties," Jpn. J. of Appl. Phys., vol. 33, (1994), pp. 5911-5916.|
|62||Moon et al., "Roles of Buffer Layers in Epitaxial Growth of SrTiO3 Films on Silicon Substrates," Japan J of Appl. Phys., vol. 33, Mar. 1994, pp. 1472-1477.|
|63||Mori et al., "Epitaxial Growth of SrTiO3 Films on Si(100) Substrates Using a Focused Electron Beam Evaporation Method," Jpn. J. of Apl. Phys., vol. 30, No. 8A, Aug. 1991, pp. L1415-L1417.|
|64||Nagata et al., "Heteroepitaxial Growth of CeO2(001) Films on Si(001) Substrates by Pulsed Laser Deposition in Ultrahigh Vacuum," Jpn. Jour. Appl. Phys., vol. 30, No. 6B, Jun. 1991, pp. L1136-L1138.|
|65||Nakagawara et al., Effects of Buffer Layers in Epitaxial Growth of SrTiO3 Thin Film on Si(100), J. Appl. Phys., 78 (12), Dec. 15, 1995, pp. 7226-7230.|
|66||O'Donnell et al., "Colossal Magnetoresistance Magnetic Tunnel Junctions Grown by Molecular-Beam Epitaxy," Appl. Physics Letters, vol. 76, No. 14, Apr. 3, 2000, pp. 1914-1916.|
|67||Patent Abstracts of Japan, vol. 010, No. 289, Oct. 2, 1986 & JP 61 108187, May 26, 1986.|
|68||Patent Abstracts of Japan, vol. 012, No. 077, Mar. 10, 1988 & JP 62 216600, Sep. 24, 1987.|
|69||Patent Abstracts of Japan, vol. 012, No. 246, Jul. 12, 1988 & JP 63 034994, Feb. 15, 1988.|
|70||Patent Abstracts of Japan, vol. 012, No. 388, Oct. 17, 1988 & JP 63 131104, Jun. 3, 1988.|
|71||Patent Abstracts of Japan, vol. 015, No. 098, Mar. 8, 1991 & JP 02 306680. Dec. 20, 1990.|
|72||Patent Abstracts of Japan, vol. 017, No. 344 & JP 05 048072, Feb. 26, 1993.|
|73||Patent Abstracts of Japan, vol. 1999, No. 14, Dec. 22, 1999 & JP 11 260835, Sep. 24, 1999.|
|74||Peter S. Guilfoyle, et al.; "Optoelectronic Architecture for High-Speed Switching and Processing Applications"; 1998 The Photonics Design and Applications Handbook; pp. H-399-H-406.|
|75||Philip Ball; "The Next Generation of Optical Fibert"; Technology Review, May 2001; pp. 55-61.|
|76||R. Houdre et al., "Properties of GaAs on Si Grown by Molecular Beam Epitaxy," Solid State and Materials Sciences, vol. 16, Issue 2, 1990, pp. 91-114.|
|77||R.A. Morgan et al., "Vertical-Cavity Surface-Emitting Lasers Come of Age," SPIE, vol. 2683, pp. 18-29.|
|78||R.D. Vispute; "High quality optoelectronic grade epitaxial AIN films on alpha-Al203, Si and 6H-SiC by pulsed laser deposition"; Thin Solid Films 299 (1997), pp. 94-103.|
|79||R.D. Vispute; "High quality optoelectronic grade epitaxial AIN films on α-Al203, Si and 6H-SiC by pulsed laser deposition"; Thin Solid Films 299 (1997), pp. 94-103.|
|80||Ringel et al., "Epitaxial Integration of III-V Materials and Devices with Si Using Graded GeSi Buffers," 27th International Symposium on Compound Semiconductors, Oct. 2000.|
|81||Ronald W. Waynant, et al.; "Optoelectronic Integrated Circuits"; Electro-Optics Handbook, McGraw-Hill, Inc., 1994; Chapter Twenty Seven.|
|82||S. F. Fang et al., "Gallium Arsenide and Other Compound Semiconductors on Silicon," J. Appl. Phys., 68(7), Oct. 1, 1990, pp. R31-R58.|
|83||S. Mathews et al., "Ferroelectric Field Effect Transisitor Based on Epitaxial Perovskite Heterostructures", Science, vol. 276, Apr. 11, 1997, pp. 238-240.|
|84||S.S. Lu, et al.; "Piezoelectric field effect transistor (PEFET) using In0.2Ga0.8As/Al0.35Ga0.65As/In0.2Ga0.8As/GaAs Strained layer structure on (111)B GaAs substrate"; Electronics Letters, 12TH Ma 1994, vol. 30, No. 10; pp. 823-825.|
|85||Suzuki et al., "A Proposal of Epitaxial Oxide Thin Film Structures For Future Oxide Electronics," Materials Science and Engineering B41, (1996), pp. 166-173.|
|86||T. Asano et al., "An Epitaxial Si/Insulator/Si Structure Prepared by Vacuum Deposition of CaF2 and Silicon," Thin Solid Films, vol. 93 (1982), pp. 143-150.|
|87||T. Chikyow et al., "Reaction and Regrowth Control of CeO2 on Si(111) Surface for the Silicon-On-Insulator Structure," Appl. Phys. Lett., vol. 65, No. 8, Aug. 22, 1994, pp. 1030-1032.|
|88||T. Mizuno, et al.; "Electron and Hole Mobility Enhancement in Strained-Si MOSFET's on SiGe-on-Insulator Substrates Fabricated by SIMOX Technology"; IEEE Electron Device Letters, vol. 21. No. 5, May 2000; pp. 230-232.|
|89||T. Warren Weeks, et al.; "GaN thin films deposited via organometallic vapor phase epitaxy on alpha(6H)-SiC(0001) using high-temperature monocrystalline AIN buffer layers" 320 Applied Physics Letters, vol. 67, No. 3, Jul. 17, 1995, pp401-403.|
|90||T. Warren Weeks, et al.; "GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)-SiC(0001) using high-temperature monocrystalline AIN buffer layers" 320 Applied Physics Letters, vol. 67, No. 3, Jul. 17, 1995, pp401-403.|
|91||Tambo et al., Molecular Beam Epitaxy Growth of SrTiO3 Films on Si(100)-2×1 with SrO Buffer Layer, Jpn. J. Appl. Phys., vol. 37, 1998, pp. 4454-4459.|
|92||Tambo et al., Molecular Beam Epitaxy Growth of SrTiO3 Films on Si(100)-2x1 with SrO Buffer Layer, Jpn. J. Appl. Phys., vol. 37, 1998, pp. 4454-4459.|
|93||The Electronics Industry Report; Prismark; 2001; pp. 111-120.|
|94||Thomas F. Krauss, et al.; "Photonic crystals in the optical regime-past, present and future"; Progress in Quantum Electronics 23 (1999) 51-96.|
|95||Thomas F. Krauss, et al.; "Photonic crystals in the optical regime—past, present and future"; Progress in Quantum Electronics 23 (1999) 51-96.|
|96||Tomonori Nagashima, et al.; "Three-Terminal Tandem Solar Cells With a Back-Contact Type Bottom Cell" Higashifuji Technical Center, Toyota Motor Corporation; 4 pages.|
|97||W. F. Egelhoff et al., "Optimizing GMR Spin Valves: The Outlook for Improved Properties", 1998 Int'l Non Volatile Memory Technology Conference, pp. 34-37.|
|98||Wang et al., "Processing and Performance of Piezoelectric Films", Univ. Of MD, Wilcoxon Research Col, and Motorola Labs, May 11, 2000.|
|99||Xiong et al., "Oxide Defined GaAs Vertical-Cavity Surface-Emitting Lasers on Si Substrates," IEEE Photonics Technology Letters, vol. 12, No. 2, Feb. 2000, pp. 110-112.|
|100||Yodo et al., GaAs Heteroepitaxial Growth on Si Substrates with Thin Si Interlayers in situ Annealed at High Temperatures, 8257b Journal of Vacuum Science & Technology, May/Jun. 1995, vol. 13, No. 3, pp. 1000-1005.|
|101||Z. Yu, et al.; "Epitaxial oxide thin films on SI(001)*"; J. Vac. Sci. Technol. B. vol. 18, No. 4, Jul./Aug. 2000; pp. 2139-2145.|
|102||Z.H. Zhu, et al. "Growth of InGaAs multi-quantum wells at 1.3mum wavelength on GaAs compliant substrates"; Applied Physics Letters, vol. 72, No. 20, May 18, 1998; pp. 2598-2600.|
|103||Z.H. Zhu, et al. "Growth of InGaAs multi-quantum wells at 1.3μm wavelength on GaAs compliant substrates"; Applied Physics Letters, vol. 72, No. 20, May 18, 1998; pp. 2598-2600.|
|104||Zogg et al., "Progress in Compound-Semiconductor-on-Silicon-Heteroepitaxy with Fluoride Buffer Layers," J. Electrochem Soc., vol. 136, No. 3, Mar. 1998, pp. 775-779.|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US6555946||Jul 24, 2000||Apr 29, 2003||Motorola, Inc.||Acoustic wave device and process for forming the same|
|US6589856||Aug 6, 2001||Jul 8, 2003||Motorola, Inc.||Method and apparatus for controlling anti-phase domains in semiconductor structures and devices|
|US6638838||Oct 2, 2000||Oct 28, 2003||Motorola, Inc.||Semiconductor structure including a partially annealed layer and method of forming the same|
|US6639249||Aug 6, 2001||Oct 28, 2003||Motorola, Inc.||Structure and method for fabrication for a solid-state lighting device|
|US6646293||Jul 18, 2001||Nov 11, 2003||Motorola, Inc.||Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates|
|US6667196||Jul 25, 2001||Dec 23, 2003||Motorola, Inc.||Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method|
|US6673646||Feb 28, 2001||Jan 6, 2004||Motorola, Inc.||Growth of compound semiconductor structures on patterned oxide films and process for fabricating same|
|US6673667||Aug 15, 2001||Jan 6, 2004||Motorola, Inc.||Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials|
|US6693033 *||Oct 26, 2001||Feb 17, 2004||Motorola, Inc.||Method of removing an amorphous oxide from a monocrystalline surface|
|US6693298||Jul 20, 2001||Feb 17, 2004||Motorola, Inc.||Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same|
|US6709989||Jun 21, 2001||Mar 23, 2004||Motorola, Inc.||Method for fabricating a semiconductor structure including a metal oxide interface with silicon|
|US6714768 *||Aug 6, 2001||Mar 30, 2004||Motorola, Inc.||Structure and method for fabricating semiconductor structures and polarization modulator devices utilizing the formation of a compliant substrate|
|US6813293||Nov 21, 2002||Nov 2, 2004||Finisar Corporation||Long wavelength VCSEL with tunnel junction, and implant|
|US6895256 *||Dec 7, 2000||May 17, 2005||Nokia Mobile Phones Ltd.||Optimized camera sensor architecture for a mobile telephone|
|US6992321 *||Jul 13, 2001||Jan 31, 2006||Motorola, Inc.||Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials|
|US7313399||Jun 4, 2004||Dec 25, 2007||Millennial Net, Inc.||Protocol for configuring a wireless network|
|US7522563||Nov 26, 2002||Apr 21, 2009||Millennial Net, Inc.||Network protocol|
|US7606572||Oct 31, 2007||Oct 20, 2009||Millennial Net, Inc.||Protocol for configuring a wireless network|
|US7684909 *||Jan 13, 2006||Mar 23, 2010||Paul Ortais||Data transmission method and device|
|US7844308||May 31, 2006||Nov 30, 2010||Millennial Net, Inc.||Communicating over a wireless network|
|US7948930||Nov 4, 2008||May 24, 2011||Millennial Net, Inc.||Network protocol|
|US8098615||Apr 15, 2011||Jan 17, 2012||Millennial Net, Inc.||Network protocol|
|US8271058||Oct 21, 2010||Sep 18, 2012||Millennial Net, Inc.||Communicating over a wireless network|
|US8389995 *||Sep 17, 2008||Mar 5, 2013||Centre National De La Recherche Scientifique (C.N.R.S.)||Epitaxial solid-state semiconducting heterostructures and method for making same|
|US8504028||Jun 24, 2011||Aug 6, 2013||Huawei Device Co., Ltd.||Method, user equipment, and system for network selection|
|US20040066819 *||Jul 10, 2003||Apr 8, 2004||Johnson Ralph H.||Versatile method and system for single mode VCSELs|
|US20040066820 *||Jul 11, 2003||Apr 8, 2004||Johnson Ralph H.||Versatile method and system for single mode VCSELs|
|US20040101009 *||Nov 21, 2002||May 27, 2004||Honeywell International Inc.||Long wavelength VCSEL with tunnel junction, and implant|
|US20040213311 *||May 20, 2004||Oct 28, 2004||Johnson Ralph H||Single mode vertical cavity surface emitting laser|
|US20040222363 *||May 7, 2003||Nov 11, 2004||Honeywell International Inc.||Connectorized optical component misalignment detection system|
|US20040247250 *||Jun 3, 2003||Dec 9, 2004||Honeywell International Inc.||Integrated sleeve pluggable package|
|US20040264530 *||Jun 27, 2003||Dec 30, 2004||Honeywell International Inc.||VCSEL having thermal management|
|US20040264536 *||Jun 27, 2003||Dec 30, 2004||Honeywell International Inc.||Dielectric VCSEL gain guide|
|US20050013539 *||Jul 17, 2003||Jan 20, 2005||Honeywell International Inc.||Optical coupling system|
|US20050013553 *||Jul 16, 2003||Jan 20, 2005||Honeywell International Inc.||Optical coupling system|
|US20050014390 *||Jul 18, 2003||Jan 20, 2005||Honeywell International Inc.||Edge bead control method and apparatus|
|US20050031011 *||Jan 29, 2004||Feb 10, 2005||Biard James R.||Electron affinity engineered VCSELs|
|US20050037789 *||Jun 4, 2004||Feb 17, 2005||Sokwoo Rhee||Protocol for configuring a wireless network|
|US20050092710 *||Oct 29, 2003||May 5, 2005||Biard James R.||Long wavelength VCSEL device processing|
|US20100289063 *||Sep 17, 2008||Nov 18, 2010||Centre Natinal De La Recherche Scientifique (C.N.R.S)||Epitaxial solid-state semiconducting heterostructures and method for making same|
|U.S. Classification||455/73, 455/347, 257/295, 438/2, 455/90.1, 370/338, 455/556.1, 257/347, 455/66.1, 438/478, 438/488, 455/81|
|Aug 23, 2000||AS||Assignment|
|Apr 13, 2004||CC||Certificate of correction|
|May 7, 2004||AS||Assignment|
Owner name: FREESCALE SEMICONDUCTOR, INC.,TEXAS
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MOTOROLA, INC.;REEL/FRAME:015698/0657
Effective date: 20040404
|Dec 28, 2005||FPAY||Fee payment|
Year of fee payment: 4
|Feb 2, 2007||AS||Assignment|
Owner name: CITIBANK, N.A. AS COLLATERAL AGENT,NEW YORK
Free format text: SECURITY AGREEMENT;ASSIGNORS:FREESCALE SEMICONDUCTOR, INC.;FREESCALE ACQUISITION CORPORATION;FREESCALE ACQUISITION HOLDINGS CORP.;AND OTHERS;REEL/FRAME:018855/0129
Effective date: 20061201
|Dec 22, 2009||FPAY||Fee payment|
Year of fee payment: 8
|May 13, 2010||AS||Assignment|
Owner name: CITIBANK, N.A., AS COLLATERAL AGENT,NEW YORK
Free format text: SECURITY AGREEMENT;ASSIGNOR:FREESCALE SEMICONDUCTOR, INC.;REEL/FRAME:024397/0001
Effective date: 20100413
Owner name: CITIBANK, N.A., AS COLLATERAL AGENT, NEW YORK
Free format text: SECURITY AGREEMENT;ASSIGNOR:FREESCALE SEMICONDUCTOR, INC.;REEL/FRAME:024397/0001
Effective date: 20100413
|Jun 18, 2013||AS||Assignment|
Owner name: CITIBANK, N.A., AS NOTES COLLATERAL AGENT, NEW YOR
Free format text: SECURITY AGREEMENT;ASSIGNOR:FREESCALE SEMICONDUCTOR, INC.;REEL/FRAME:030633/0424
Effective date: 20130521
|Nov 6, 2013||AS||Assignment|
Owner name: CITIBANK, N.A., AS NOTES COLLATERAL AGENT, NEW YOR
Free format text: SECURITY AGREEMENT;ASSIGNOR:FREESCALE SEMICONDUCTOR, INC.;REEL/FRAME:031591/0266
Effective date: 20131101
|Jan 30, 2014||FPAY||Fee payment|
Year of fee payment: 12