|Publication number||US6518168 B1|
|Application number||US 09/029,317|
|Publication date||Feb 11, 2003|
|Filing date||Aug 16, 1996|
|Priority date||Aug 18, 1995|
|Also published as||WO1997007429A1|
|Publication number||029317, 09029317, PCT/1996/13223, PCT/US/1996/013223, PCT/US/1996/13223, PCT/US/96/013223, PCT/US/96/13223, PCT/US1996/013223, PCT/US1996/13223, PCT/US1996013223, PCT/US199613223, PCT/US96/013223, PCT/US96/13223, PCT/US96013223, PCT/US9613223, US 6518168 B1, US 6518168B1, US-B1-6518168, US6518168 B1, US6518168B1|
|Inventors||Paul G. Clem, Noo-Li Jeon, Milan Mrksich, Ralph G. Nuzzo, David A. Payne, George M. Whitesides, Younan Xia|
|Original Assignee||President And Fellows Of Harvard College, Board Of Trustees Of The University Of Illinois|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (52), Non-Patent Citations (15), Referenced by (345), Classifications (42), Legal Events (6)|
|External Links: USPTO, USPTO Assignment, Espacenet|
This application claims priority to U.S. Provisional Patent Application Ser. No. 60/007,058, filed Aug. 18, 1995 by Clem, et al., and entitled “Patterned Materials Deposition Effected With Microcontact Printing”, incorporated herein by reference.
The present invention relates generally to the derivatization of surfaces with self-assembled monolayers using microcontact printing, and more particularly to selective derivatization of raised portions of substrates, selective derivatization of indentations in substrates, and chemical vapor deposition and sol-gel deposition on substrates in patterns dictated by patterns of self-assembled monolayers.
In the fields of microfabrication for microelectronic devices, microoptical devices, and microbiological devices, precision, reproducibility, and small feature size is important. The development of devices that are small relative to the state of the art and conveniently and relatively inexpensively reproduced is a goal. A well-known method of production of such devices is photolithography. In this technique a negative or positive resist (photoresist) is coated onto an exposed surface of a material. The resist then is irradiated in a predetermined pattern, and irradiated (positive resist) or nonirradiated (negative resist) portions of the resist are removed from the surface to produce a predetermined resist pattern on the surface. This can be followed by one or more procedures such as etching, plating, and the like. X-ray and electron-beam lithography have found similar use.
While irradiative lithographic methods may be advantageous in many circumstances, all require relatively sophisticated and expensive apparatus to reproduce a particular pattern, and are relatively time-consuming. Additionally, these techniques are not easily employed with nonplanar surfaces. In the field of electronic circuitry, an attempt is often made to save space by stacking planar circuit boards or chips, the boards or chips interconnected with auxiliary contacts. Alternately, a board or chip may be bent or otherwise formed in a nonplanar manner so as to save space, auxiliary contacts connecting components on different sides of the bend. All too often these auxiliary contacts are the cause of circuitry failure, and the attempt to move from the two-dimensional domain to a three-dimensional domain fails. Irradiative lithography provides no remedy to this complication, nor does it provide a method of conveniently and inexpensively reproducing an existing microelectronic circuit pattern, or the surface morphological features of other objects of interest.
U.S. Pat. No. 5,512,131 (Kumar and Whitesides) entitled “Formation of Microstamped Patterns on Surfaces and Derivative Articles”, issued Oct. 4, 1993, describes a technique for patterning a material surface with an elastomeric stamp. The stamping surface of the stamp is coated with a self-assembled monolayer-forming species having a functional group selected to bind to a particular material. The stamping surface is placed against a surface of the material and, when removed, a self-assembled monolayer of the species is created on the surface according to the stamping surface pattern. Etching and plating can follow.
Microfabrication of patterned materials such as metals and oxides is a very important area of current research and development. Integration of oxide thin films with semiconductor substrates is a critical technology for a variety of microelectronic memory and circuit applications. Current technology of patterning oxides typically involves uniform deposition followed by post-deposition etching. This processing can present difficulties with respect to nonuniform etch rates and ill-defined typography and large index gradients. In particular, LiNbO3 is especially inert and etch-resistant and these obstacles have led to the use of in-diffusion and ion-exchange techniques to fabricate waveguides.
Copper, prized for its high conductivity and resistance to electromigration, is difficult to pattern as fine lines using conventional techniques such as reactive ion etching. Low throughout of ion-milling processes further complicates the design of a practical commercial process. Chemical vapor deposition is widely used for deposition of metals and ceramics on surfaces, but a simple, convenient technique for patterning a surface using chemical vapor deposition is lacking.
Accordingly, it is an object of the present invention to provide a convenient technique for creating patterned features of metals, oxides, and other materials on surfaces in a manner that minimizes process steps, reduces fabrication costs, and eases environmental concerns by reducing the quantity of chemical process waste. It is another object to provide a technique for selective deposition of such materials in indentations of articles having contoured surfaces.
The present invention provides techniques for depositing material, in a pattern, on a substrate surface while leaving regions contiguous with the patterned region free of the material or removing material from regions to leave the material in the pattern. A blocking agent is applied to the surface in a pattern and material is deposited in a pattern complementary to the blocking agent pattern, or material is deposited at all regions but removed from the blocking agent pattern. According to one aspect, the method involves effecting chemical vapor deposition on a substrate in a predetermined pattern. The method involves forming on a substrate a blocking agent such as a polymeric agent or a self-assembled monolayer (SAM) of a molecular species in a pattern which acts to block chemical vapor deposition (CVD) where the self-assembled monolayer is formed, and exposing the surface to chemical vapor deposition conditions. Chemical vapor deposition is thereby allowed to occur selectively at regions not covered by the blocking agent. Thus, the method involves allowing a SAM to dictate a pattern in which CVD occurs at a surface. In one embodiment, the method involves transferring a SAM-forming molecular species from an applicator to the surface in a pattern so as to transfer a SAM to a first portion of the surface, while leaving a second portion contiguous with the first portion free of SAM, effecting chemical vapor deposition at the portion of the substrate not covered by the SAM, and removing the SAM. In this and/or other techniques of the invention, the applicator can be a stamp having a conformable surface that is used to transfer the SAM-forming species to the substrate surface. The stamp can have a patterned surface with protrusions and indentations, the outward-facing surfaces of the protrusions defining a stamping surface, or can be essentially flat. The applicator can be an elastomeric polymer.
The present invention provides, according to another aspect, a method involving depositing a pattern of a material such as a metal or metal oxide on a substrate. According to one embodiment, the method involves forming a blocking agent such in a pattern on a substrate and exposing the substrate to a sol-gel precursor of the material and allowing the material to form on the substrate in a pattern dictated by the pattern of the blocking agent. The technique can involve applying a SAM-forming molecular species to a surface of an applicator such as a stamping surface of stamp, contacting a first portion of a substrate with the applicator surface to transfer a SAM to the first portion while leaving a second portion of the substrate contiguous with the first portion free of SAM, applying a sol-gel precursor to the substrate and depositing the material at the second region of the substrate, and removing the oxide from the first portion of the substrate leaving the deposited material at the second portion. In one embodiment, the sol-gel precursor is a precursor of a metal oxide, including a metal or metals selected from the group consisting of Bi, Zr, Sr, Sc, Ta, Li, Nb, Pb, Ti, Ba, and combination thereof. For example, the sol-gel precursor can be a precursor of lead zirconium titanate, barium strontium titanate, lead scandium tantalate, lithium niobate, lead lanthanum titanate, lead zirconium titanate, barium strontium titanate, barium titanate, tantalum oxide, or a combination of any of the above.
The invention provides, according to another aspect, a method that involves providing an article having a surface including a plurality of protrusions having outward-facing surfaces contiguous with regions that intervene the outward-facing surfaces, and forming on at least one outward-facing surface a SAM-forming molecular species while leaving regions that intervene the outward-facing surfaces essentially free of the molecular species.
The invention provides, according another aspect, a method that involves providing an article having a surface including at least one indentation and a region contiguous with the indentation, and forming on the surface at the region contiguous with the indentation a SAM-forming molecular species while leaving the surface at the indentation essentially free of the molecular species.
In each of the methods described herein, one or any number of protrusions, or one or any number of indentations can be included in the surface. In addition, planar or nonplanar surfaces can be derivatized. Techniques of the invention can further include applying, via chemical vapor deposition or solution deposition such as sol-gel deposition, material to regions of the surface of the substrate dictated by the SAM pattern. The present invention also provides articles formed in accordance with methods described herein.
The invention also provides a method involving providing an article having a contoured surface including at least one indentation and a region contiguous with the indentation, and forming a self-assembled monolayer at the region contiguous with the indentation while leaving the indentation essentially free of the self-assembled monolayer.
Also provided is a method involving applying to at least one portion of a surface of an article a CVD blocking agent from an applicator, and exposing the surface to chemical vapor deposition conditions.
The invention also involves exposing a nonplanar surface to chemical vapor deposition conditions and allowing material to be deposited on a first portion of the surface while blocking a second, contiguous portion of the surface from deposition.
Also provided is a method involving exposing a surface, on at least a first portion of which is a blocking agent, to a sol-gel precursor of a material to be deposited at the surface.
The invention also provides a method involving depositing, from a sol-gel precursor solution, a metal oxide on a first portion of a surface of a substrate while allowing second portions of the substrate surface contiguous with the first portion to remain free of the metal oxide, the first portion of the substrate surface having a lateral dimension of less than about 5 μm.
A method of exposing a substrate surface to CVD conditions is provided as well, and involves depositing material on a first portion of the substrate surface selectively at a rate of at least about 300 Angstroms per minute growth of material while preventing material from being deposited at a second portion of the substrate surface contiguous with the first portion.
The invention also provides a method involving depositing, via CVD or sol-gel processing, material proximate first and second portions of a substrate surface, and removing the material from the first portion while allowing the material to remain at the second portion.
Other advantages, novel features and objects of the invention will become apparent from the following detailed description of the invention when considered in conjunction with the accompanied drawings which are schematic and which are not intended to be drawn to scale. In the Figures, each identical or nearly identical component that is illustrated in various Figures is represented by a single numeral. For purposes of clarity, not every component is labeled in every Figure.
FIGS. 1a-1 d illustrate schematically microcontact printing of a SAM on a surface followed by sol-gel deposition and removal of the oxide;
FIGS. 2a-2 c illustrate patterning a SAM on a planar surface using microcontact printing followed by CVD of metal;
FIGS. 3a-3 c illustrate patterning a SAM on a nonplanar surface followed by CVD of metal on regions of the surface not protected by the SAM;
FIG. 4 illustrates application of a SAM to a nonplanar surface that can be further modified via CVD or solution deposition;
FIGS. 5a and 5 b illustrate (a) a photocopy of an optical micrograph of patterned LiNbO3 on a silicon surface in accordance with the invention, and (b) Auger electron spectroscopy (AES) line scans across the lines of FIG. 5a;
FIGS. 6a-6 c are photocopies of (a) strip waveguides of LiNbO3, with widths from 4 μm to 40 μm, (b) illumination of patterned strip waveguides 4 μm to 120 μm in width, and © excitation of TEo mode in 120 μm wide, 80 nm strip waveguides;
FIGS. 7a and 7 b are (a) Cu, K∞0-20 x-ray diffraction patterns of LiNbO3 on sapphire and (b) a rocking curve of (00.L) LiNbO3;
FIGS. 8a-8 c are photocopies of (a) patterned Pb1−3x/2LaxTiO3 (PLT) pads with 200 μm widths fabricated in accordance with the invention suitable for decoupling capacitor applications, (b) x-ray data of PLT (1%) on ITO indicating tetragonal ferroelectric phase, and © x-ray data of PLT (28%) on ITO indicating a cubic paraelectric phase with diffuse phase transformation;
FIGS. 9a-9 c are photocopies of (a) a SEM of a patterned SAM on an alumina surface, (b) lines of copper deposited by selective CVD on the surface illustrated in FIG. 9a, the copper pattern complementary to the SAM pattern, and © corresponding AES line scan on the sample of FIG. 9b in the direction perpendicular to the lines of copper;
FIGS. 10a-10 c are photocopies of SEMs of copper applied by CVD to substrates whose surfaces were (a) underivatized, and (b, c) derivatized by a monolayer of SAM at the outward-facing surfaces of protrusions (b) or on an essentially planar surface at regions with the exception of indentations (c);
FIG. 11 is a photocopy of a micrograph of a pattern of copper deposited via low-throughput CVD on a substrate patterned with a SAM, in a pattern complementary to the SAM pattern;
FIGS. 12a and 12 b are photocopies of (a) a micrograph of a pattern of copper deposited via high-throughput CVD on a substrate patterned with a SAM, and (b) a micrograph of the surface of FIG. 12a after mild abrasion to remove copper from SAM-protected regions; and
FIG. 13 is a photocopy of an SEM image of a polyurethane blocking agent formed on a substrate.
The following documents are incorporated herein by references for all purposes:
U.S. Pat. No. 5,512,131, filed Oct. 4, 1993, issued Apr. 30, 1996, by Kumar et al.;
Commonly-owned, co-pending U.S. patent application Ser. No. 08/397,635, filed Mar. 1, 1995 by Whitesides et al., and its CIP, U.S. patent application Ser. No. 08/676,951, filed Jul. 8, 1996;
“Chemical Vapor Deposition of Copper for Multi Level Metalization” by A. E. Kaloyeros and M. A. Fury, MRS Bulletin, June, 1993 pages 22-29;
“LiNbO3 Waveguide Devices” by M. Kondo, Journal of the Ceramics Society of Japan, 101, 38-42 (1993);
“Efficient Direct Diode-Laser Frequency Doubling and Quasi-Phase-Matched LiNbO3 Waveguides” by X. Chao et al., Optics Letter, 17:11, Jun. 1, 1992;
“Ferroelectric Thin Films IV”, B. A. Tuttle, et al., Materials Research Society Symposium Proceeding Volume 361 pager 155-167, 269-287;
“The Chemistry of Metal CVD”, T. P. Kodas, M. J. Hampden-Smith, VCH (New York) 1994.
The present invention involves the use of a blocking agent formed in a pattern on a substrate surface for directing materials deposition in the micron and submicron range. Lithography-free methods can be carried out using this technology for depositing patterned metals via CVD, metal oxides, and the like without the need for extensive subsequent processing. The need for high vacuum, complicated and expensive electronics, high temperatures for processing, and a cleanroom environment thereby is avoided. Significant expense is saved.
For purposes of illustration, much of the description of the invention below in conjunction with the drawings describes a process in which a SAM is the blocking agent. However, as discussed further below, a variety of blocking agents can be used, and the invention lies in using a blocking agent at a surface to direct deposition of material and/or to facilitate removal of deposited material from selected areas of the surface. A blocking agent such as a SAM is applied to surfaces serve to control nucleation and adhesion of overlayers of material from a precursor source, such as a CVD environment or a fluid precursor such as a sol-gel. Material from such precursor sources adheres loosely and poorly to the blocking agent, or is formed thereon with poor structural characteristics, and can be removed from the blocking agent easily by thermal and/or mechanical agitation. In this manner, the blocking agents direct material growth in a predetermined pattern. Materials such as copper, LiNbO3, lead-lanthanum-titanate (PLT) and the like can be used as components of integrated optical and DRAM devices, large substrate devices such as flat panel displays, and the like. The methods eliminate many levels of processing, reduce waste, allow new applications for which conventional projection lithography is inappropriate, and can be used on nonplanar (such as a fiber, etc.) or planar substrates. Many commercial devices can be processed, such as waveguides.
FIGS. 1a-d illustrate schematically formation of a pattern of material on a substrate in accordance with the invention. In FIG. 1a an applicator 10 includes a surface 12 including indentations 14 and protrusions 15. The protrusions have outward-facing surfaces 16. Surface 12, at least outward-facing portions 16 thereof, is coated with a SAM-forming species 17. When the applicator is applied to substrate 18 and removed, a SAM is formed at regions 20 of the substrate contacted by outward-facing surfaces 16 (defining a stamping surface) of the protrusions, as illustrated in FIG. 1b. Intervening regions 22 of the substrate, which are not contacted by the stamping surface, are free of SAM. A sol-gel precursor then is applied to the surface of the substrate by, for example, dip coating or spin-casting. After heat treatment amorphous oxide 19 forms at regions 22 and adheres well to the substrate, but above regions 20 oxide is poorly adhered and easily removed by thermal and/or mechanical agitation, resulting in the substrate 18 including oxide 19 patterned at portions 22 of the substrate surface, that is, deposited on the substrate surface in a pattern complementary to the SAM pattern (FIG. 1d). The resulting article then can be exposed to conditions under which the oxide is crystallized.
The resulting article includes well-defined features and can serve as waveguide, decoupling capacitor, thin-film optical switch, optical modulator, optical matrix switch or the like. Waveguides having high index gradients and other devices can be fabricated in this manner to include well-defined features of a wide range of lateral dimensions. For example, waveguides result having index gradients of greater than 0.1, greater than 0.25, greater than 0.5, or greater than 1 at 850 nanometers can be produced. A frequency doubling waveguide resulting in blue light for optical communication can be produced according to the method.
Essentially any material that can be deposited via sol-gel techniques can be amenable for processing according to the method of the invention. Ferroelectric and electrooptic materials and sol-gel processing of a variety of precursors to form a variety of species is well known to those of ordinary skilled in the art and can be applied and exploited by the method of the invention. For example, materials such as PbScTaO3, (Pb, La)TiO3 (PLT), LiNbO3, KNbO3, LiTaO3, potassium diphosphate, potassium triphosphate, PbMoO4, TeO2, Ta2O5 BaTiO3, BBO crystals, Ba1−xSrxTiO3, Pb(Zr,Ti)O3, SrTiO3, bismuth strontium tantalate, and the like.
FIGS. 2a-2 c illustrate schematically one embodiment of the invention in which a SAM dictates a pattern in which material is applied to a surface via CVD. In FIG. 2a an applicator 10, including protrusions 15 having outward-facing surfaces 16, is used to transfer a SAM-forming species 17 from outward-facing surfaces 16 and thereby to apply a SAM 21 in a pattern to portions 20 of substrate 18, leaving complementary portions 22 of the substrate free of the SAM. Then, the surface is exposed to CVD conditions, whereby material 23 is deposited selectively at portions 22. Gentle thermal, mechanical, or chemical agitation of the surface can be used to remove the SAM, with or without any overlying material deposited via CVD onto the SAM. The result is material 23, deposited in a pattern complementary to the SAM pattern. Those of ordinary skill in the art will recognize that the term “CVD conditions”, as used herein, involves subjecting a surface of a substrate to those conditions of temperature, pressure (including vacuum), and chemical vapor at which CVD occurs at the substrate surface.
CVD precursors suitable for use in accordance with the invention included inorganic precursors, metal-organic precursors, organometallic precursors, and any others capable of leading to CVD. Precursors of metals such as silver, aluminum, gold, cobalt, chromium, copper, manganese, nickel, lead, palladium, platinum, titanium, zirconium, and the like, or of multi-metallic compounds of interest, can be used to produce a variety of CVD products. These species, and others, can be provided with a variety of organic or inorganic ligands or in inorganic form without ligands. Such are well known in the art. Any CVD apparatus, such as hot and cold-wall reactors, can be used.
A particular SAM to be used with a particular CVD precursor can be selected, or screened, as follows. A variety of SAMs can be formed on a substrate, the substrate can be exposed to conditions of temperature and/or pressure (and/or vacuum) commensurate with a desired CVD process, and the durability of the SAMs evaluated. SAMs durable under a desired CVD condition will be suitable for use in methods of the invention involving CVD. The combination should also be evaluated to assure that gentle thermal, chemical, or mechanical agitation will remove the SAM along with the material deposited via CVD thereupon. CVD materials and processes suitable for use in accordance with the invention are described in “Chemical Vapor Deposition of Metals: Part 1. An Overview of CVD Processes” by M. J. Hampden-Smith and T. T. Kodas, Chemical Vapor Deposition 1995, No. 1, pages 8-22. A similar screening test can be used to evaluate combinations of particular SAMs and sol-gel precursors.
FIGS. 3a-3 c illustrate an aspect of the invention that involves applying to outward-facing surfaces of protrusions of an article, selectively, a SAM. In FIG. 3a, an applicator 24 having a substantially planar stamping surface 26 carries a SAM-forming molecular species 17 at surface 26. Article 28 includes a surface 30 including protrusions 32 having outward-facing surfaces 34 contiguous with regions 36 that intervene the outward-facing surfaces 34. Described alternatively, article 28 includes a surface 30 having indentations 36 contiguous with remaining portions 34.
When stamping surface 26 is brought into contact with outward-facing surfaces 34, a SAM 21 is transferred, selectively, to outward-facing surfaces 34. (FIG. 3b). Then, if article 28 is exposed to CVD conditions, a CVD product 27 is deposited selectively at intervening regions 36. The SAM can then be removed, resulting in a pattern of material deposited via CVD at intervening regions 36 not protected by the SAM. As in the above-discussed arrangement, CVD may result also in deposition atop SAM 21, but the material deposited thereon will be weakly adhered and easily removed via agitation.
The sol-gel process described above with reference to FIGS. 1a-1 d can be carried out on a contoured surface as illustrated in FIGS. 3a-3 c. In such an arrangement, material will be deposited at indentations 36 selectively (with or without some weakly adhered material deposition at SAMs 21). Following removal of SAMs 21 with or without overlying material, material will remain at indentation 36. Where indentations 36 define channels in electronic circuitry, such as passageways from one side of a circuit board to another, an advantageous electrical connection pathway results. Although not illustrated in FIG. 1, 2, or 3, this embodiment can be envisioned with reference to FIG. 3c. Where article 28 is a flat article, holes passing from one side of the article to another can be envisioned as indentation 36 passing completely through the article. Application of a SAM to one or both sides of the article, followed by exposure to CVD conditions, will result in deposition within the holes while one or both outer surfaces remain free of deposition or can be cleaned easily of deposition atop SAMs.
In another embodiment of the invention a combination of patterned SAMs and CVD, at various throughput rates of CVD, results in selective CVD only at regions not protected by the blocking agent (e.g.SAM), or CVD essentially at all locations. At higher throughput rates, CVD can be made to occur on the substrate both at unprotected locations, and at some or all locations protected by the blocking agent, and a subsequent lift-off procedure removed material deposited at locations other than the originally-unprotected regions. Lift-off can be accomplished in most instances by mild, abrasive-free mechanical polishing to remove material deposited atop SAMs with or without the SAMs. Lift-off also can involve applying Scotch™ tape to the surface and peeling off the material atop the SAMs, mild polishing on a cotton felt wetted with isopropanol, or the like. The technique has been used to successfully deposit metal in a pattern including features (portions with lateral dimensions) with sizes ranging from about 5 to about 250 μm, on a variety of technologically important substrates including ITO, titanium nitride, thermal and plasma-grown SiO2, Al2O3 and glass.
Although not specifically illustrated, this embodiment can be envisioned easily with reference to FIGS. 2 and 3. FIGS. 2 and 3 are illustrative of embodiments of the invention in which CVD occurs selectively only at those regions not protected by SAM blocking agents or masks. At higher throughput rates, CVD occurs not only at regions 22 of the substrate (FIG. 2c) or at indentations 36 (FIG. 3c), but occurs as well on SAMs 21. Following mild agitation, material deposited atop the SAMs is removed, but material deposited elsewhere remains. Thus, highly-selective CVD can be carried out at very high throughput rates. In particular, throughput rates involving growth of material such as copper at a rate greater than about 300 Angstroms per minute, at a higher rate about 500 Angstroms per minute, and in a still higher rate greater than about 800 Angstroms per minute, can be achieved. At lower throughput rates, selective deposition can occur (no deposition at SAMs). for example at approximately 100 Angstroms per minute or approximately 200 Angstroms per minute.
Thus, the invention involves a technique for area-selective CVD at a surface that is throughput-rate dependent, and a technique for CVD at a surface followed by mechanical lift-off at selective regions that had been pre-treated with a blocking agent.
FIG. 4 illustrates an embodiment of the invention that involves rolling a curved substrate 40 having a surface 42 over a surface 44 of an applicator 46, which surface includes protrusions 48 having outward-facing surfaces 50 coated with SAM-forming species 52. An article 48, which can be fabricated from material identical to that of stamp 46, can aid in the process. A patterned SAM on nonplanar surface 42 results, and CVD or sol-gel processing as described herein can be carried out at surface 42 in a pattern on surface 42 dictated by the SAM pattern imprinted thereon which corresponds to the pattern of protrusions 48 of applicator 46. Alternatively, surface 42 can be contoured, that is, included protrusions and intervening regions, and be rolled by a substantially planar stamp 48 so that SAM is applied selectively at outward-facing surfaces of the protrusions, alternatively followed by CVD or sol-gel deposition as described. Either arrangement can be reversed, that is, article 40 can be an applicator and article 46 can be a surface for receiving a SAM. The surface that transfers the SAM and the surface that receives the SAM will be dictated first by the surface to which the SAM is first applied, and by considerations such as adhesion of SAM to the surface that is designed to receive the SAM. A discussion of SAM-forming species and surfaces to which such species adhere is provided below.
In another technique for patterning on a nonplanar substrate, applicator 10 or 24 is flexible (e.g. made entirely of an elastomer such as PDMS), and is bent or otherwise made to conform to a nonplanar surface. This technique is applicable to any of the embodiments described herein.
The ability to transfer SAMs to nonplanar surfaces is particularly advantageous in the preparation of microelectronic devices on curved surfaces (see FIG. 10), for example microconnections between various circuit regions, the connections conforming to a bend to conserve space in an overall circuit-containing region.
In addition to sol-gel processing and CVD, application of SAMs to contoured surfaces, that is, those including protrusions (indentations) finds use in biological arenas. A SAM formed at outward-facing surfaces of protrusions of an article as illustrated in FIG. 3b, where the SAM includes an exposed functionality that is of biological interest, can be useful. For example, cytophilic SAMs allow individual cells or groups of cells to be immobilized, cultured and studied at protrusions. Alternatively, proteins or the like can be immobilized at protrusions.
A variety of different SAMs can be utilized in the techniques of the invention. For example, with reference to FIG. 3b, a SAM having a different exposed functionalities can be applied to intervening regions 36 (not shown) resulting in alternate regions of hydrophilicity and hydrophobicity, cytophilicity and cytophobicity, and the like. Alternatively, also with reference to FIG. 3b, following introduction of a different SAM (not shown) into intervening regions 36, the SAM shown could be removed from outward facing surfaces 34 via physical means, and the SAM-coated region 36 could serve as a resist to CVD or sol-gel processing, resulting in deposition selectively at outward-facing surfaces 34. Alternatively, such an arrangement could result in cell culturing, protein adsorption, or the like in intervening regions. Cells confined in intervening regions of a surface can be thereby stabilized to fluid flow over the surface.
Articles having features with very small dimensions can be fabricated in accordance with the invention. For example, a waveguide fabricated of material such as LiNbO3 on a substrate such as silicon can be fabricated to have line widths smaller than 100 microns, smaller than 50 microns, smaller than 10 microns, smaller than 5 microns, smaller than 4 microns, smaller than 2 microns, smaller than 1 micron, smaller than 0.5 micron, smaller than 0.2 micron, most preferably smaller than 0.1 micron. Heights of features formed on surfaces in accordance with the invention of the above dimensions can be achieved as well, including an embodiment with lines of height smaller than 0.08 micron. The invention allows creation of material on a substrate surface with edge resolution of at least about 500 nm, preferably at least about 100 nm. As used herein, the term “edge resolution” is meant to define that an intended linear portion of a patterned material feature will deviate from a straight line in an amount less than or equal to the edge resolution value. Waveguides can be fabricated in accordance with methods of the invention that have an index gradient of greater than 0.1, 0.25, 0.5, or most preferably greater than 1 at 850 nm.
The following substrates, SAMs, applicators dimensions, other articles and features, and processes are applicable to all aspects of the invention. Selection of components and parameters can be made with reference to U.S. Pat. No. 5,512,131. The surface of the article to which a SAM of the invention is to be applied and the SAM-forming species should be selected together such that the SAM-forming species terminates at one end in a functional group that binds to the surface. In embodiments of the present invention involving CVD and sol-gel deposition it is the general physical instability of articles deposited on a SAM which allows selective patterning. Is these cases the exposed functionality of the SAM (functionality facing away from the surface) is not as important as in other embodiments such as patterning of surfaces for biological studies. However, for sol-gel processing SAMs exposing hydrophobic functionalities are preferred.
A substrate and SAM-forming molecular species are selected such that the molecular species terminates at a first end in a functional group that binds to the desired surface (substrate or film). As used herein, the terminology “end” of a molecular species, and “terminates” is meant to include both the physical terminus of a molecule as well as any portion of a molecule available for forming a bond with a surface in a way that the molecular species can form a SAM, or any portion of a molecule that remains exposed when the molecule is involved in SAM formation. A molecular species may comprise a molecule having first and second terminal ends, separated by a spacer portion, the first terminal end comprising a functional group selected to bond to a surface, and the second terminal group optionally including a functional group selected to provide a SAM on the surface having a desirable exposed functionality. The spacer portion of the molecule may be selected to provide a particular thickness of the resultant SAM, as well as to facilitate SAM formation. Although SAMs of the present invention may vary in thickness, as described below, SAMs having a thickness of less than about 50 Angstroms are generally preferred, more preferably those having a thickness of less than about 30 Angstroms and more preferably those having a thickness of less than about 15 Angstroms. These dimensions are generally dictated by the selection of the SAM-forming molecular species and in particular the spacer portion thereof.
A wide variety of surfaces (exposing surfaces on which a SAM will form) and SAM-forming molecular species are suitable for use in the present invention. A nonlimiting exemplary list of combinations of surface material and functional groups included in molecular species, such functional groups selected so as to bind to material, follows. It is to be understood, however, that any electrically conductive, electrically nonconductive, or electrically semiconductive material surface may be used in the present invention, as long as a functional group attachable to or contained within a molecular species, the functional group binding to the material, is available. Although the following list categorizes certain preferred materials for surfaces with certain preferred functional groups which firmly bind thereto, many of the following functional groups would be suitable for use with exemplary materials with which they are not categorized, and any and all such combinations are within the scope of the present invention. Preferred surface materials include metals such as gold, silver, copper, cadmium, zinc, palladium, platinum, mercury, lead, iron, chromium, manganese, tungsten, and any alloys of the above with sulfur-containing functional groups such as thiols, sulfides, disulfides, and the like; doped or undoped silicon with silanes and chlorosilanes; metal oxides such as silica, indium tin oxide (ITO), magnesium oxide, alumina, quartz, glass, and the like with carboxylic acids; platinum and palladium with nitrites and isonitriles; and copper with hydroxamic acids. Additional suitable functional groups include acid chlorides, anhydrides, sulfonyl groups, phosphoryl groups, hydroxyl groups and amino acid groups. Additional surface materials include germanium, gallium, arsenic, and gallium arsenide. Additionally, epoxy compounds, polysulfone compounds, plastics and other polymers may find use. Additional materials and functional groups suitable for use in the present invention can be found in U.S. Pat. No. 5,079,600, issued Jan. 7, 1992, and incorporated herein by reference. In one embodiment, a combination of gold as a surface material and a SAM-forming molecular species having at least one sulfur-containing functional group such as a thiols, sulfide, or disulfide is selected. The interaction between gold and such sulfur-containing functional groups is a well-studied science, and a nonlimiting representative exemplary list of such sulfur-containing functionalities may be found in an article entitled “Wet Chemical Approaches to the Characterization of Organic Surfaces: Self-Assembled Monolayers, Wetting and the Physical-Organic Chemistry of the Solid-Liquid Interface”, by G. W. Whitesides and Paul E. Laibinis, Langmuir, 6, 87 (1990), incorporated herein by reference.
A SAM-forming molecular species may terminate in a second end opposite the end bearing the functional group selected to bind to particular material in any of a variety of functionalities. That is, the molecular species may include a functionality that, when the molecular species forms a SAM on a surface of the material, is exposed. Thus, according to the some embodiments the functional group would literally define a terminus of the molecular species, while according to other embodiments the functional group would not literally define a terminus of the molecular species, but would be exposed.
Such functionality may be selected to create a SAM that is hydrophobic, hydrophilic, amphipathic, that selectively binds various biological or other chemical species such as proteins, antibodies, antigens, sugars and other carbohydrates, and the like. For example, ionic, nonionic, polar, nonpolar, halogenated, alkyl, aryl or other functionalities may exist at the exposed portion of the SAM. A nonlimiting, exemplary list of such functional groups includes those described above with respect to functional group attachment to the surface in addition to: —OH, —CONH—, —CONHCO—, —NH2, —NH—, —COOH, —COOR, —CSNH—, —NO2 −, —SO2 −, —RCOR—, —RCSR—, —RSR, —ROR—, —PO4 −3, —OSO3 −2, —SO3 −, —NHxR4−x +, —COO−, —SOO−, —RSOR—, —CONR2, —(OCH2CH2)nOH (where n=1-20, preferably 1-8), —CH3, —PO3H−, -2-imidazole, —N(CH3)2, —NR2, —PO3H2, —CN, —(CF2)nCF3 (where n=1-20, preferably 1-8), olefins, and the like. In the above list, R is hydrogen or an organic group such as a hydrocarbon or fluorinated hydrocarbon. As used herein, the term “hydrocarbon” includes alkyl, alkenyl, alkynyl, cycloalkyl, aryl, alkaryl, aralkyl, and the like. The hydrocarbon group may, for example, comprise methyl, propenyl, ethynyl, cyclohexyl, phenyl, tolyl, and benzyl groups. The term “fluorinated hydrocarbon” is meant to refer to fluorinated derivatives of the above-described hydrocarbon groups. Additionally, R may be a biologically active species such as an antigen, antibody, hapten, etc. Such embodiments are described below, and attachment of such biologically active groups to molecular species 28 is known to those of ordinary skill in the art.
As noted above, a molecular species may form a SAM having exposed functionality including hydrophobic, hydrophilic, and amphipathic functionality, that selectively binds various biological or other chemical species such as proteins, antibodies, antigens, sugars and other carbohydrates, and the like. The exposed functionality may comprise a member of any specific or non-specific binding pair, such as either member of the following non-limiting list: antibody/antigen, antibody/hapten, enzyme/substrate, enzyme/inhibitor, enzyme/cofactor, binding protein/substrate, carrier protein/substrate, lectin/carbohydrate, receptor/hormone, receptor/effector, complementary strands of nucleic acid, repressor/inducer, or the like.
The central portion of molecules comprising SAM-forming molecular species generally includes a spacer functionality connecting the functional group selected to bind to a surface and the exposed functionality. Alternately, the spacer may essentially comprise the exposed functionality, if no particular functional group is selected other than the spacer. Any spacer that does not disrupt SAM packing and that allows the SAM layer to be somewhat impermeable to various reagents such as etching and plating reagents, as described below, in addition to organic or aqueous environments, is suitable. The spacer may be polar, nonpolar, positively charged, negatively charged, or uncharged. For example, a saturated or unsaturated, linear or branched alkyl, aryl, or other hydrocarbon spacer may be used, as well as corresponding halogenated hydrocarbons, especially fluorinated hydrocarbons.
Thus, the molecular species generally comprises a species having the generalized structure R′—A—R″, where R′ is selected to bind to a particular surface of material, A is a spacer, and R″ is a group that is exposed when the species forms a SAM. Also, the molecular species may comprises a species having the generalized structure R″—A′—R′—A—R″, where A′ is a second spacer or the same as A, or R′″—A′—R′—A—R″, where R′″ is the same or different exposed functionality as R″. Additionally, species such as R′—A—R″—B and B—R′″—A′—R′—A—R″—B″ may be chosen, where B and B′ are similar to A, do not prevent exposure of R′″ and R″ to the surrounding environment, and may be the same or different. It is to be understood that, in the above generalized formulas, A and R″ or R′″ may not be distinguishable, but may be continuous. For example, when A comprises an alkyl chain, and R″ or R′″ comprises an alkyl functionality, A and R″ or R′″ together may simply define an alkyl chain. One class of molecules suitable for use as a SAM-forming molecular species, when to be SAM-derivatized comprises gold, silver, and copper, are the omega-functionalized thiols, that is, those having the generalized structure R′—A—R″, where R′=—SH, A=—(CH2)n— where n=1-30, preferably 1-20, and R″=—CH3; —OH; —O(CH2)nH, where n=1-15, preferably 1-7; —CONH(CH2)nH, where n=1-15, preferably 1-7; —NHCO(CH2)nH, where n=1-15, preferably 1-7; —(OCH2CH2)nH, where n=1-15, preferably 1-7; and —COOH.
A surface to be coated with SAM may comprise its own substrate, or may be a thin film deposited upon a substrate. Where a separate substrate is employed, it may comprise any biological, nonbiological, organic, or inorganic material, or a combination of any of these. The substrate can be formed of a conductive, nonconductive, semiconducting material, or the like, and may comprise glass, silica, alumina, plastic or other organic polymers for example acrylonitrile-butadiene-styrene copolymers, polysulfone, polystyrene, metals, or any of the above materials described with respect to other material of the present invention. The substrate may also comprise a bioerodable material such as, for example, poly(glycolic acid), polyanhydrides, polyorthoesters, polylactic acid, or combinations thereof. The substrate may include a bonding layer, for example a thin titanium film, to promote adhesion between a layer of material to be SAM-coated and the substrate.
SAM-forming molecular species may be coated onto the stamping surface by any convenient method. For example, the molecular species can be absorbed into a piece of paper, and the stamping surface of applicators 10, 24, 40, or 46 then pressed against the piece of paper. A cotton swab or the like also may be used to transfer the molecular species to the stamping surface. Alternatively, the stamping surface can be coated followed by shearing off excess, that is, the SAM-forming molecular species can be spin coated on the stamping surface. The molecular species may be very rapidly transferred to the stamping surface. For example, contacting the stamping surface with a molecular species for a period of time of approximately 2 seconds is adequate to effect the sufficient transfer where a relatively concentrated solution of SAM-forming molecular species in solvent is used. Where a more dilute solution is used, longer times may be required.
Generally, the molecular species is dissolved in a solvent for transfer to a stamping surface. The concentration of the molecular species in such a solvent for transfer should be selected to be low enough that the species is well-absorbed into the stamping surface, and high enough that a well-defined SAM may be transferred to a material surface without blurring. Typically, the species will be transferred to a stamping surface in a solvent at a concentration of less than 100 mM, preferably from about 0.5 to about 20.0 mM, and more preferably from about 1.0 to about 10.0 mM. Any solvent within which the molecular species dissolves, and which may be carried (e.g. absorbed) by the stamping surface, is suitable. In such selection, if a stamping surface is relatively polar, a relatively polar and/or protic solvent may be advantageously chosen. If a stamping surface is relatively nonpolar, a relatively nonpolar solvent may be advantageously chosen. For example, toluene, ethanol, THF, acetone, isooctane, diethyl ether, and the like may be employed. When a siloxane polymer is selected for fabrication of a stamp, and in particular stamping surface, toluene ethanol, acetone, and diethyl ether are preferred solvents. The use of such an organic solvent generally aids in the absorption of SAM-forming molecular species by a stamping surface. When the molecular species is transferred to the stamping surface, either near or in a solvent, the stamping surface should be dried before the stamping process is carried out. If a stamping surface is not dry when the SAM is stamped onto the material surface, that is, if gross liquid remains on the stamping surface, blurring of the SAM can result from dispersion of the liquid from under the stamping surface. The stamping surface may be air dried, blow dried, or dried in any other convenient manner. The drying manner should simply be selected so as not to degrade the SAM-forming molecular species.
According to embodiments of the present invention in which a self-assembled monolayer is formed on silicon dioxide or glass, including aspects of the invention involving the preparation of surfaces of biological interest, a flat or contoured surface such as a silicon dioxide or glass slide or petri dish can be patterned with a self-assembled monolayer of alkylsiloxane that exposes a chemical functionality of interest (for example biological interest, facilitating biological studies at that surface for example at protrusions if the surface is contoured). For example, a self-assembled monolayer of alkylsiloxane terminating in a cytophilic functionality can be patterned onto a silicon dioxide or glass surface in accordance with the invention, followed by adherence or inmmobilization of a cell or cells to the cytophilic functionality. Biological, specifically cytophilic, functionalities in association with self-assembled monolayers are described in copending, commonly-owned application Ser. No. 08/131,841 and in an article entitled “Engineering Cell Shape and Function”, by Singhvi, R., et al. Science, 264, 696 (1994), both incorporated herein by reference. This article describes the formation of islands of self-assembled monolayer terminating in a non-polar functionality (—CH3) surrounded by regions of polyethylene glycol-terminating self-assembled monolayer. The non-polar terminal functionality of the islands is protein adherent, while the polyethylene glycol functionality is not protein-adherent. Exposure of a surface derivatized as such to a protein matrix such as the purified extracellular matrix protein laminin results in cytophilic, protein-coated islands surrounded by cytophobic regions. Exposure of this surface to cells results in cell attachment preferentially to the adhesive (cytophilic), laminin-coated islands and the cells are prevented from extending onto surrounding non-adhesive (cytophobic) regions. Alternatively, a surface derivatized as described above with a patterned, self-assembled monolayer terminating in non-polar, such as methyl, functionality can be contacted with a cell or cells without first treating the surface with a protein matrix such as laminin. According to some embodiments, the cell or cells will secrete a protein matrix such as laminin that will coat the exposed non-polar functionality, and the cell or cells then will adhere thereto.
According to some embodiments of the invention the above-described techniques involving patterning glass or silicon dioxide can be applied to other polar surfaces including polar polymeric surfaces such as oxidized polyethylene or polystyrene. According to these embodiments alkylsiloxane can be patterned onto a polymeric surface oxidized for example via plasma etch to expose polar functionalities such as hydroxyl, carboxylic acid, aldehyde, or the like. These surfaces can form the basis for all embodiments of the invention described herein, including the biological aspects described above.
Patterning of alkylsiloxane onto glass, silicon dioxide, or polar polymeric surfaces can be carried out according to chemistry known to those of skill in the art. For example, trichlorosilane or trialkoxysilane such as triethoxysilane, when applied to these surfaces in essentially any solvent in which they can be carried (such as water, hexane, toluene, and the like) will form alkylsiloxane on that surface.
The techniques described above involving patterning of alkylsiloxane on glass, silicon dioxide, or polar polymeric surfaces can be carried out on planar or non-planar surfaces, as described herein, and can be combined with techniques described herein involving allowing alkylsiloxane or its precursor to spread onto the surface while contacting the surface simultaneously with a species that is not compatible with the alkylsiloxane or precursor, and involving deforming a stamp from which the alkylsiloxane or precursor is transferred, or both.
According to some embodiments of the invention, features (such as outward-facing surfaces of protrusions of a stamp or substrate, or lateral dimension of a SAM or CVD or sol-gel product) have a lateral dimension of less than about 10 microns. According to other embodiments, features may have a lateral dimension of less than about 5, 2, 1, 0.5, or 0.25 microns. According to a particularly preferred embodiment, features have a lateral dimension of less than 0.2 microns. As used herein, the term “lateral dimension” is meant to define the distance across any portion of a SAM surface that differs in any way from its surrounding environment, or corresponding dimensions of CVD or sol-gel products. Such differences may be chemical, physical, or biological. When viewing a surface directly, a lateral dimension would be a dimension of a SAM perpendicular to the line of sight.
According to another embodiment of the invention, the area of such features is relevant. For example, a feature area of less than about 10,000 square microns can be provided, although areas of much more than this are within the scope of the present invention. Such a feature may have an area of less than 1,000, 100, 40, 25, 2, 1 or 0.06 square microns.
The applicators 10, 24, 40, or 46 can be formed in a variety of ways. A stamp can be formed by contacting a mold surface with a hardenable material, typically a fluid, which serves as a precursor of the stamp. The fluid is hardened, for example by ionic, nonionic, or free-radical polymerization to form a stamp having a surface contacting the mold surface. The mold surface can be selected to include at least one protrusion, and when the stamp is removed from mold surface, a stamp having a stamping surface including an indentation corresponding to the mold surface protrusion results (or a plurality of indentations corresponding to a plurality of protrusions results). According to other embodiments, a flat mold surface results in a flat stamp.
The particular material chosen for formation of the stamp should satisfy certain physical characteristics. The stamp can be elastic, such that the stamping surface may very closely conform to minute irregularities in a surface of material so as to completely transfer SAM-forming molecular species thereto, and so as to be amenable to transferring SAMs of molecular materials to nonplanar surfaces. In another embodiment, the applicator has a surface that contacts the substrate that is conformable, but the remainder of the applicator is not elastic or conformable.
The applicator should also be formed such that the stamping surface is made of absorbent material selected to absorb SAM-forming molecular species to be transferred to a surface to form a SAM thereon. The stamping surface preferably swells to absorb SAM-forming molecular species, and/or to absorb the molecular species dissolved or suspended in a carrier such as an organic solvent. Such swelling and absorbing characteristics serve the important function of providing good definition of an isolated SAM on a surface. For example, if a dimensional feature of a stamping surface or surface to be coated with SAM includes a substantially square-shaped feature, the stamping surface should transfer SAM-forming molecular species to the surface of the substrate material so as to form SAMs mirroring the substantially square features of the stamping surface, without blurring. Such blurring can result from selection of a stamp which does not absorb the SAM-forming molecular species or its carrier. According to the stamp of the present invention, SAM-forming molecular species, optionally in a carrier, is absorbed into the stamping surface, and when the stamping surface contacts a substrate surface, the molecular species is not dispersed, but binds to the surface, and removal of the stamping surface from the substrate surface results in well-defined SAM features.
Additionally, the stamp should be fabricated such that the stamping surface is free of any leachable materials such as plasticizers that would interfere with or contaminate the SAM. For example, if additives are included in the material used to fabricate the stamp, such additives should be bound to the internal structure of the stamp.
According to a preferred embodiment, the stamp is formed from a polymeric material. Polymeric materials suitable for use in fabrication of the stamp may have linear or branched backbones, and may be crosslinked or noncrosslinked, depending upon the particular polymer and the degree of formability desired of the stamp. A variety of elastomeric polymeric materials are suitable for such fabrication, especially polymers of the general classes of silicone polymers, epoxy polymers, and acrylate polymers. Epoxy polymers are characterized by the presence of a three-member cyclic ether group commonly referred to as an epoxy group, 1, 2-epoxide, or oxirane. For example, diglycidyl ethers of bisphenol A may be used, in addition to compounds based on aromatic amine, triazine, and cycloaliphatic backbones. Another example includes the well-known Novolac polymers. Materials which may not be suitable for fabrication of a stamping surface according to preferred embodiments include polyethylene and polystyrene, which are generally too brittle, and polybutadiene, which is generally too elastic.
Examples of silicone elastomers suitable for use as a stamp include those formed from precursors including the chlorosilanes such as methylchlorosilanes, ethylchlorosilanes, and phenylchlorosilanes, and the like. A particularly preferred silicone elastomer is polydimethylsiloxane. Exemplary polydimethylsiloxane polymers include those sold under the trademark Sylgard by the Dow Chemical Company, Midland Michigan, and particularly Sylgard 182, Sylgard 184, and Sylgard 186.
The invention involves, as one aspect, forming a blocking agent pattern on a substrate surface that serves as a mask to CVD, sol-gel processing, or the like. The blocking agent can be a SAM, as described above, or another species such as a polymeric material. SAMs can become polymeric materials when selected appropriately. For example, where organosilanes that are polymerizable are selected to form patterned SAMs on a surface, they can be made to crosslink at the surface. For example, a polymerizable organosilane can be applied to a stamping surface of an applicator and the stamping surface of the applicator held in contact with a surface to be derivatized for an extended period of time. Especially at high concentrations of cross-linkable organosilane, and long contact times between applicator and the surface, multi-layer, polymeric material can result. Thus, the invention involves applying a blocking agent, or mask, directly to a substrate surface in a pattern, and depositing the material in a surface complementary to the pattern via CVD, sol-gel processing, or the like. The blocking agent can be applied in a pattern corresponding to an applicator stamping surface pattern, as illustrated in FIGS. 1 and 2, or in a pattern dictated by the contoured surface of the substrate to receive the blocking agent, as illustrated in FIG. 3.
U.S. patent application Ser. No. 08/616,929 of Kim, et al., entitled “Method of Forming Articles and Patterning Surfaces via Capillary Micromolding” incorporated herein by reference, describes a number of techniques for patterning surfaces with materials that can serve useful in the present invention as blocking agents or masks for pattern-selective CVD and/or sol-gel processing. Such species, or precursors of such species (which may require additional chemical reactions to form blocking agents) can be transferred from an applicator via the technique illustrated in FIGS. 1-4 to a flat, curved, or contoured surface, or can be transferred from indentations in a contoured stamping surface of the applicator where a precursor of the blocking agent is contained in a fluid state that can be carried in the indentations. Alternatively, in a technique described in the above-referenced Kim, et al. application, an applicator having indentations can be placed against a surface of a substrate whereby channels are defined in a pattern at the surface by portions of the surface and the indentations of the applicator. These channels can be filled via capillary action by a fluid precursor of a blocking agent or a fluid containing a precursor of a blocking agent. Following formation of the blocking agent at the surface via polymerization, concentration and hardening by solvent or carrier diffusion, or the like, the applicator (serving as a micromold in this arrangement) can be removed. Alternatively, the applicator can be removed and the blocking agent formed or hardened, if not already in final, blocking form. Pressure or vacuum can be used to facilitate flow of fluid into such channels. In this embodiment, the precursor must be of a viscosity allowing flow of the precursor into the channels. Those of ordinary skill in the art can determine, without undue experimentation, which fluids will readily flow into such channels based upon dimension of the channels and viscosity of the fluid. In most instances, the viscosity of the fluid can be adjusted, for example by diluting or concentrating the fluid, to achieve a level of viscosity suitable for flow into the channels at a desired rate. The polarity of the fluid can be tailored as well, with reference to the chemical characteristic of the substrate surface or applicator, to facilitate fluid carrier flow.
In one example of such an technique, and with reference to FIG. 1a, a fluid precursor of a blocking agent is a solution of monomer in a fluid carrier and is polymerized at the surface of substrate 18 with article 10 in place upon the substrate. Article 10 then is removed, resulting in a polymeric blocking agent on the surface of substrate 18 in a pattern corresponding to the pattern of indentations of the applicator. The pattern can be linear or non-linear, can differ in cross-section, and can include isolated regions and/or connected regions. The pattern can be formed on a nonplanar surface by bending the applicator to conform to the surface or, where a fluid precursor of the blocking agent is contained in channels of the applicator and transferred to the surface, the applicator can be rolled over the surface (or the surface rolled over the applicator. This structure can be thermally polymerized on the substrate surface by heat, photopolymerized if the substrate 18 or applicator 10 is transparent to polymerizing radiation, or polymerized following removal of applicator 10 via heat or photolysis. Free-radical polymerization can be carried out as well. These and other forms of polymerization, including cationic, anionic, copolymerization, chain polymerization, cross-linking, and the like can be employed, and essentially any type of polymer or copolymer formable from a fluid precursor can be patterned on the surface of a substrate in accordance with the invention.
An exemplary, non-limiting list of polymers that are suitable for forming blocking agents include urethane polymers, polyamides, polycarbonates, polyacetylenes and polydiacetylenes, polyphosphazenes, polysiloxanes, polyolefins, polyesters, polyethers, poly(ether ketones), poly(alkylene oxides), poly(ethylene terephthalate), poly(methyl methacrylate), polystyrene, and derivatives and block, random, radial, linear, or teleblock copolymers, cross-linkable materials such as proteinaceous material and/or blends of the above. Gels are suitable where dimensionally stable enough to maintain structural integrity upon removal of applicator 10 from the surface of substrate 18. The particular polymer, copolymer, blend, or gel selected is not critical to the invention, and those of skill in the art can tailor a particular material for any of a wide variety of applications.
Alternatively, a blocking agent precursor such as a polymerizable or cross-linkable species can entirely coat the surface of substrate 18, and applicator 10 then can be pressed against the surface of substrate 18 (and/or rolled against a curved substrate) to form the precursor into a pattern corresponding to the indentation pattern of the applicator.
According to another embodiment, the blocking agent or mask is not a polymer or cross-linked organic species as described above, but is a non-polymerized organic or inorganic species that is dissolved or dispersed in a fluid carrier to form a fluid precursor introduced into channels created between applicator 10 and the surface of substrate 18, whereupon the fluid carrier or solvent dissipates (e.g., is removed via evaporation from the channels and/or absorption into the applicator 10).
Where it is desired to pattern the surface of the substrate with a material via CVD or sol-gel processing and subsequently to remove the blocking agent or mask from the surface, the blocking agent or mask should be selected in conjunction with the substrate surface and the material to be deposited via CVD or sol-gel processing such that the blocking agent can be removed selectively. For example, where a polymerizable material is deposited on a substrate surface in a pattern and polymerized thereon, followed by CVD or sol-gel deposition of a material in a pattern complementary to the blocking agent pattern, the polymerized blocking agent can be selected so as to be removable by a solvent to which the material pattern on the substrate is inert, or degraded and removed via radiation that does not destroy the material pattern. Photoresist can be used as the blocking agent in this embodiment and, following CVD or sol-gel processing, irradiated and removed. Selection of such materials and conditions is within the level of ordinary skill in the art.
In another embodiment, a SAM is applied to a surface in a pattern, a blocking agent precursor (a prepolymer, for purposes of illustration) is applied to the surface in a pattern dictated by the SAM pattern, the prepolymer is crosslinked or polymerized at the surface, and the resulting polymer thereby defines a blocking agent that dictates a pattern of deposition via CVD or sol-gel processing. The use of a SAM to direct patterned deposition of a polymer at a surface is described in U.S. patent application Ser. No. 08/676,951, referenced above, and its counterpart, international application no. PCT/US96/03073, filed Mar. 1, 1996 and incorporated herein by reference. In this arrangement, the self-assembled monolayer is patterned onto the substrate surface using any method described herein or other method known to those of ordinary skill in the art. A prepolymer solution then is applied to the surface and, where the prepolymer solution is compatible with the exposed functionality of the self-assembled monolayer and incompatible with the surface of the substrate, the prepolymer solution assembles on the SAM in a pattern that corresponds to the SAM pattern. The prepolymer then can be polymerized. Where the prepolymer is compatible with the substrate surface, but incompatible with the functionality exposed by the SAM, the prepolymer will assemble in a pattern complementary to the pattern of the SAM, and can be polymerized as such. Where the prepolymer is polymerized in a pattern complementary to that of the SAM, the polymer is selected to be robust under conditions in which the SAM is removed and the prepolymer thereby directs deposition of material, via CVD or sol-gel processing, in a pattern complementary to that of the polymeric blocking agent, and in a pattern corresponding to the original SAM pattern. In this arrangement, if the chemical functionality exposed by the SAM is significantly polar, then the prepolymer should be relatively polar if it is desired that the blocking agent be formed on the SAM. Polar/nonpolar characteristics of a particular surface, SAM, and prepolymer can be selected and tailored in this technique to direct a blocking agent as desired. As in the above arrangement in which a polymeric blocking agent is formed in a pattern on the surface, in this arrangement if it is desired to provide a surface carrying solely a material deposited via CVD or sol-gel processing, the polymeric blocking agent is selected to be removable under conditions in which the deposited material remains.
The function and advantage of these and other embodiments of the present invention will be more fully understood from the examples below. The following examples are intended to illustrate the benefits of the present invention, but do not exemplify the full scope of the invention.
Sol-gel precursor solutions were synthesized from metal alkoxides in alcoholic solutions. Two previously-investigated chemical systems were used in this example: (1) a lithium niobium ethoxide solution in ethanol as a precursor for LiNbO3 (Eichorst, et al., Inorg Chem. 29, 1458 (1990)), and (2) a lead lanthanum titanium precursor in propanediol as a precursor for PLT (Ali et al., J. Mat. Sci. Lett. (1995)). LiNb(OCH2CH3)6 was synthesized and dissolved in absolute ethanol to form 0.3 M solutions suitable for spin casting on sapphire and SiO2/Si substrates. PLT films were derived from a dihydroxy alcohol route and diluted to 0.3 M in isopropanol for deposition on SiO2/Si and ITO/SiO2/Si.
With reference to FIG. 1 a polydimethylsiloxane (PDMS) applicator 10 was fabricated as described in U.S. Pat. No. 5,512,131, incorporated by reference above. The stamp had a contoured surface as illustrated in FIG. 1a. The stamp was coated with a solution of octadecyltrichlorosilane (OTS) in hexane (0.2-25 mM). A photoresist spinner used to coat the stamp was found to provide consistent, nearly defect-free transfer of the pattern. The details of the patterning process and the nature of the SAMs obtained have been reported previously (Kumar, et al., Appl. Phys. Lett. 63, 2002 (1993); Kumar, et al., Langmuir 10, 1498 (1994); Wilbur, et al., Adv. Mat. 6, 600 (1994)).
Inert substrates such as sapphire were modified with a water plasma before SAM formation to promote adhesion of the SAM. The substrates were treated in DC water plasma for 15 seconds at 50 Watts and 1,000 mtorr.
Sol-gel solutions were spun cast on OTS patterned substrates at 3,000 rpm for 30 seconds. Pyrolysis of thin layers at 350° C. allowed removal of organic species, yielding 80 nm LiNbO3 and 300 nm PLT amorphous oxide thin layers, as determined by surface profilometry and SEM.
After pyrolysis, regions of a amorphous layers above the SAM were severely cracked and showed poor adhesion. In contrast, well-bound continuous layers 19 were formed above underivatized regions 22. The loosely-adhered layers were selectively removed by mild mechanical abrasion with cotton felt wetted with isopropanol. The remaining patterned material was crystallized at 600° C.
FIG. 5a is a photocopy of an optical micrograph of patterned LiNbO3 on a Si substrate surface (lines 60 μm in width separated by 80 μm). Selectivity of the deposition is clearly demonstrated by Auger electron spectroscopy (AES) line scans made across the imaged region (FIG. 5b).
FIG. 6a is a photocopy of an optical micrograph of patterned LiNbO3 lines on Si substrates. The line widths present in this structure range from 120 μm to 4 μm. The same pattern was used to form LiNbO3 strip waveguides on sapphire as shown in FIGS. 6b and 6 c. Fast firing of the LiNbO3 strips developed heteroepitaxial (00.6) oriented LiNbO3 on (00.1) sapphire substrates, as demonstrated by the x-ray data of FIG. 7a. Rocking curve half widths of below 1° further indicate the high degree of orientation achieved (FIG. 7b).
Pads of Pb1−3x/2 Lax TiO3 (PLT) with x=1% and 28% were patterned on Si substrates (the Si substrates were p-type, (110) orientation with 20-25 angstrom native oxide). Patterning was carried out as illustrated schematically in FIGS. 1a-1 d. As described in U.S. Pat. No. 5,512,131, a stamp including protrusions of parallel lines was first applied to the surface, removed and rotated 90°, and reapplied. Sol-gel deposition was carried out as described above. A photocopy of an optical micrograph of the resulting pattern appears in FIG. 8a. For capacitance measurements PLT listed positive on ITO/Si substrates. X-ray analysis of these samples show the presence of PLT and ITO peaks only (FIGS. 8b and 8 c). PLT (1% La) is a ferroelectric, tetragonal unit cell material which exhibits splitting of the (100) and (001) peaks. In contrast, PLT (28% La) is a paraelectric, cubic cell material with a single cubic (100) peak. PLT (28%) is a candidate material for DRAM applications because of a low leakage current and a high dielectric constant. Dielectric characterization was performed after application of gold top electrodes by sputtering. The article showed good electrical properties.
This example demonstrates the formation of patterned structures of copper, using CVD from a source gas of (hexafluoroacetylacetonato)copper(I)vinyltrimethylsilane) on substrates whose surfaces have been patterned by a monolayer of alkylsiloxane. The procedure is illustrated schematically in FIGS. 2a-2 c and 3 a-3 c. PDMS applicators 10 and 24 were coated with a solution of OTS in hexane or toluene (0.2-2 mM). High-quality SAMs were successfully formed by printing on a range of substrates including materials (Al Si, and TiN) bearing a native oxide overlayer, glasses (glass microscope slides, ITO, and polymers (pyromellitic dianhydride oxydianiline polyamide) whose surfaces had been modified by plasma treatment.
FIG. 9a is a photocopy of an SEM image of a patterned SAM of OTS on a planar surface of Al/Al2O3, achieved using the technique as illustrated in FIGS. 2a-2 b. (Lopez, et al., Langmuir, 9, 1513-1516 (1993)).
Following deposition of copper via CVD as illustrated schematically in FIG. 2c, copper lines in a pattern complementary to the SAM pattern resulted, as shown in FIG. 9b which is a photocopy of a SEM image of this copper pattern. The selectivity of the deposition is evidenced by the AES line scan shown in FIG. 9c of the pattern of FIG. 9b.
CVD deposition of copper in a pattern dictated by a SAM pattern on a surface including a plurality of indentations, as illustrated schematically in FIGS. 3a-3 c, was carried out. FIG. 10a is a photocopy of an SEM image of CVD of copper on a surface as illustrated in FIG. 3a, without SAM protection. FIG. 10b is a photocopy of an SEM image of CVD of copper on a similar structure, the outward-facing surface of protrusions of which was protected with a SAM as illustrated in FIGS. 3b and 3 c.
FIG. 10c is a photocopy of an SEM image of a flat substrate through which 0.7 μm holes were drilled. A flat PDMS applicator coated with OTS in hexane was applied to the flat substrate, resulting in protection of the exposed surface of the substrate by the SAM, but without protection of the holes. Exposure to CVD conditions resulted in copper depositions selectively in the holes.
A copper CVD precursor, copper hexafluoroacetylacetonate vinyltrimethylsilane was obtained from Schumacher Company (Carlsbad, Calif.). ITO substrates were obtained from Donnelly Applied Films (Denver, Colo.). Titanium nitride substrates (600 Angstroms thick sputtered TiN on Si) were obtained from Hyundai Electronics, Ltd. Octadecyltrichlorosilane (OTS) was obtained from Aldrich and used without further purification.
PDMS applicators used for microcontact printing were fabricated according to U.S. Pat. No. 5,512,131, referenced above. Substrates (TiN, ITO, SiO2, Al2O3 and glass) were washed with deionized water, acetone, isopropanol, and dried with a stream of argon. The dried substrates were placed in a UV/ozone generator for five to ten minutes to remove trace organic contaminants (and in some instances to effect very thin oxide growth) immediately prior to microcontact printing with OTS. A solution of OTS in dry hexane (10 mM) was used as “ink” to be applied to the applicator. The OTS solution was applied to the PDMS stamp using a photoresist spinner (3000 rpm for 30 seconds) and dried in a stream of argon for approximately 30 seconds. The stamp was brought into contact with the substrate (by hand) and held in place for about 30 seconds. This procedure routinely yielded OTS thin films with approximately 25-30 Angstroms mass coverages on the substrates examined.
After printing, copper thin films were deposited via CVD. The chemical vapor deposition experiment was carried out in a home-built, cold-wall reactor. The reactor included a stainless steel chamber pumped by a diffusion pump to a base pressure of less than or equal to 1×10−7 Torr. Copper films were typically deposited on one square inch substrates. The substrates were cleaned with deionized water and isopropanol and finally dried with a stream of argon before loading into the reactor. The copper precursor was carried into the reactor using argon as the carrier gas (flow rate of 5-150 sccm) and delivered to the susceptor region where the substrate was held between 150-300° C. The temperature of the susceptor was regulated to within + or −2° C. using a programmable power supply. A typical deposition took approximately 10-20 minutes to carry out. The chamber pressure was maintained at a pressure value between 100 mTorr and 1 Torr using a throttle valve. Film thicknesses were determined by profilometry. Patterned copper films were characterized by electron and optical microscopy, energy dispersive X-ray analysis, X-ray photoelectron and Auger electron spectroscopies.
At CVD conditions of 175° C. with low source pressure (300 mTorr) and at a deposition rate of approximately 200 Angstroms per minute, 3,000 Angstroms thick copper film, deposited selectively in a pattern complementary to that of the SAM pattern resulted. FIG. 11 is a photocopy of a microscopic image of a 1 square inch ITO substrate patterned as described. The process routinely yielded high resolution features (as small as 0.5 microns) over large areas. The sizes of the copper features deposited in the demonstration of FIG. 1 range from 5 to 250 microns.
A procedure was carried out as described above, but at high throughput values of 250° C. and chamber pressure of 1 Torr. The deposition rate was approximately 800 Angstroms per minute. After application of an SAM and exposure to CVD conditions, copper was essentially blanket-deposited on the surface as illustrated in FIG. 12a. It is evident from FIG. 12a that the coherence of the copper film was poor above the SAMs, with many features of the SAMs being visible. This illustrates significant heterogeneity of the activated nucleation rates for deposition on this surface. Profilometry revealed that copper film in the non-SAM bearing regions was 1 micron thick. A mild polishing on a cotton felt wetted with isopropanol removed material deposited atop the SAMs, to reveal the intricate patterns of copper features as illustrated in the photocopy of the micrograph of FIG. 12b. Features with dimensions ranging from 5 to 250 microns are clearly visible.
FIG. 13 is a photocopy of an SEM image of a polymeric structures formed on a substrate according to the method described above with respect to “blocking agents”. A fluid polymeric precursor of polyurethane was allowed to fill channels formed by indentations in applicator 10 and regions of the surface of Si/SiO2 substrate 18. The polymeric structure was formed by capillary filling of channels defined by indentations in article 10 and the substrate surface. A liquid polyurethane prepolymer was placed adjacent openings of channels and filled the channels via capillary action. The applicator 10 was PDMS, formation of which is referenced above.
Those skilled in the art would readily appreciate that all parameters listed herein are meant to be exemplary and actual parameters will depend upon the specific application for which the methods and apparatus of the present invention are being used. It is, therefore, to be understood that the foregoing embodiments are presented by way of example only and that, within the scope of the appended claims and equivalents thereto, the invention may be practiced otherwise than as specifically described.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US4433417 *||May 29, 1981||Feb 21, 1984||Xerox Corporation||Nonplanar substrate injection lasers grown in vapor phase epitaxy|
|US4728591 *||Mar 7, 1986||Mar 1, 1988||Trustees Of Boston University||Self-assembled nanometer lithographic masks and templates and method for parallel fabrication of nanometer scale multi-device structures|
|US4793676 *||Dec 23, 1987||Dec 27, 1988||The Board Of Trustees Of The Leland Stanford Junior University||Optical fiber acousto-optic amplitude modulator|
|US4802951 *||Dec 23, 1987||Feb 7, 1989||Trustees Of Boston University||Method for parallel fabrication of nanometer scale multi-device structures|
|US4908299 *||Dec 30, 1988||Mar 13, 1990||Matsushita Electric Industrial Co., Ltd.||Pattern forming method|
|US4948629 *||Feb 10, 1989||Aug 14, 1990||International Business Machines Corporation||Deposition of diamond films|
|US4964972 *||Mar 30, 1989||Oct 23, 1990||Yeda Research And Development Company Limited||Ionic recognition and selective response in self assembling monolayer membranes on electrodes|
|US4968524 *||Oct 12, 1988||Nov 6, 1990||Matsushita Electric Industrial Co., Ltd.||Process for producing a polyacetylene|
|US5077085 *||Mar 6, 1987||Dec 31, 1991||Schnur Joel M||High resolution metal patterning of ultra-thin films on solid substrates|
|US5079600 *||Apr 14, 1988||Jan 7, 1992||Schnur Joel M||High resolution patterning on solid substrates|
|US5093154 *||Sep 5, 1989||Mar 3, 1992||Matsushita Electric Industrial Co., Ltd.||Process for preparing a monomolecular built-up film|
|US5198269 *||Aug 28, 1989||Mar 30, 1993||Battelle Memorial Institute||Process for making sol-gel deposited ferroelectric thin films insensitive to their substrates|
|US5234850 *||Sep 4, 1990||Aug 10, 1993||Industrial Technology Research Institute||Method of fabricating a nitride capped MOSFET for integrated circuits|
|US5243202 *||Jan 12, 1993||Sep 7, 1993||Casio Computer Co., Ltd.||Thin-film transistor and a liquid crystal matrix display device using thin-film transistors of this type|
|US5324974 *||Apr 14, 1993||Jun 28, 1994||Industrial Technology Research Institute||Nitride capped MOSFET for integrated circuits|
|US5352485 *||Apr 8, 1993||Oct 4, 1994||Case Western Reserve University||Synthesis of metal oxide thin films|
|US5455072 *||Nov 18, 1992||Oct 3, 1995||Bension; Rouvain M.||Initiation and bonding of diamond and other thin films|
|US5512131 *||Oct 4, 1993||Apr 30, 1996||President And Fellows Of Harvard College||Formation of microstamped patterns on surfaces and derivative articles|
|US5635327 *||May 24, 1995||Jun 3, 1997||Fuji Xerox Co., Ltd.||Electrophotographic photoreceptor and process for preparing the same|
|US5641709 *||Aug 30, 1995||Jun 24, 1997||Lg Semicon Co., Ltd.||Method of manufacturing a conductive micro bridge|
|US5669303 *||Mar 4, 1996||Sep 23, 1997||Motorola||Apparatus and method for stamping a surface|
|US5674783 *||Apr 1, 1996||Oct 7, 1997||Taiwan Semiconductor Manufacturing Company, Ltd.||Method for improving the chemical-mechanical polish (CMP) uniformity of insulator layers|
|US5725788 *||Mar 4, 1996||Mar 10, 1998||Motorola||Apparatus and method for patterning a surface|
|US5766784 *||Apr 8, 1996||Jun 16, 1998||Battelle Memorial Institute||Thin films and uses|
|US5776748 *||Jun 6, 1996||Jul 7, 1998||President And Fellows Of Harvard College||Method of formation of microstamped patterns on plates for adhesion of cells and other biological materials, devices and uses therefor|
|US5801092 *||Sep 4, 1997||Sep 1, 1998||Ayers; Michael R.||Method of making two-component nanospheres and their use as a low dielectric constant material for semiconductor devices|
|US5817242 *||Aug 1, 1996||Oct 6, 1998||International Business Machines Corporation||Stamp for a lithographic process|
|US5933741 *||Aug 18, 1997||Aug 3, 1999||Vanguard International Semiconductor Corporation||Method of making titanium silicide source/drains and tungsten silicide gate electrodes for field effect transistors|
|US5939150 *||Apr 25, 1997||Aug 17, 1999||Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V.||Method for treating a substrate surface|
|US5946551 *||Mar 25, 1997||Aug 31, 1999||Dimitrakopoulos; Christos Dimitrios||Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric|
|US5948621 *||Sep 30, 1997||Sep 7, 1999||The United States Of America As Represented By The Secretary Of The Navy||Direct molecular patterning using a micro-stamp gel|
|US5951881 *||Jul 22, 1996||Sep 14, 1999||President And Fellows Of Harvard College||Fabrication of small-scale cylindrical articles|
|US5959735 *||Oct 17, 1997||Sep 28, 1999||Brown University Research Foundation||Optical stress generator and detector|
|US5976952 *||Mar 5, 1997||Nov 2, 1999||Advanced Micro Devices, Inc.||Implanted isolation structure formation for high density CMOS integrated circuits|
|US5980983 *||Apr 17, 1998||Nov 9, 1999||The President And Fellows Of Harvard University||Liquid precursors for formation of metal oxides|
|US5981383 *||Mar 11, 1997||Nov 9, 1999||United Microelectronics Corporation||Method of fabricating a salicide layer of a device electrode|
|US5981970 *||Mar 25, 1997||Nov 9, 1999||International Business Machines Corporation||Thin-film field-effect transistor with organic semiconductor requiring low operating voltages|
|US6015990 *||Feb 26, 1998||Jan 18, 2000||Kabushiki Kaisha Toshiba||Semiconductor memory device and method of manufacturing the same|
|US6020047 *||Sep 4, 1996||Feb 1, 2000||Kimberly-Clark Worldwide, Inc.||Polymer films having a printed self-assembling monolayer|
|US6027595 *||Jul 2, 1998||Feb 22, 2000||Samsung Electronics Co., Ltd.||Method of making optical replicas by stamping in photoresist and replicas formed thereby|
|US6033774 *||May 15, 1997||Mar 7, 2000||Northwestern University||Self-assembled superlattices and waveguides prepared for use therewith|
|US6048632 *||Aug 22, 1997||Apr 11, 2000||Nec Research Institute||Self-biasing, non-magnetic, giant magnetoresistance sensor|
|US6096386 *||Sep 6, 1996||Aug 1, 2000||International Business Machines Corporation||Method of oriented depositing chemically defined bodies|
|US6114099 *||Nov 19, 1997||Sep 5, 2000||Virginia Tech Intellectual Properties, Inc.||Patterned molecular self-assembly|
|US6180239 *||Jul 8, 1996||Jan 30, 2001||President And Fellows Of Harvard College||Microcontact printing on surfaces and derivative articles|
|US6180288 *||Mar 21, 1997||Jan 30, 2001||Kimberly-Clark Worldwide, Inc.||Gel sensors and method of use thereof|
|US6368877 *||Jun 25, 1997||Apr 9, 2002||Massachusetts Institute Of Technology||Self-assembling peptide surfaces for cell patterning and interactions|
|US6375870 *||Nov 17, 1999||Apr 23, 2002||Corning Incorporated||Replicating a nanoscale pattern|
|US6380101 *||Apr 18, 2000||Apr 30, 2002||International Business Machines Corporation||Method of forming patterned indium zinc oxide and indium tin oxide films via microcontact printing and uses thereof|
|US6403286 *||Nov 4, 1999||Jun 11, 2002||Corning Incorporated||High aspect ratio patterning of glass film|
|US6413587 *||Mar 2, 1999||Jul 2, 2002||International Business Machines Corporation||Method for forming polymer brush pattern on a substrate surface|
|WO1996029629A2||Mar 1, 1996||Sep 26, 1996||President And Fellows Of Harvard College||Microcontact printing on surfaces and derivative articles|
|1||A.E. Kaloyeros & M.A. Fury, "Chemical Vapor Deposition of Copper for Multilevel Metallization," MRS Bulletin, pp. 22-29, Jun. 1993.|
|2||A.J. Moulson & J.M. Herbert, Electroceramics Materials;properties;applications, Chapman & Hall, Publishers, Capt. 8.3.5 "Thin-film optical switch", pp. 366-369, 1990.|
|3||A.J. Moulson & J.M. Herbert, Electroceramics Materialspropertiesapplications, Chapman & Hall, Publishers, Capt. 8.3.5 "Thin-film optical switch", pp. 366-369, 1990.|
|4||Abstract J.K. Schoer et al., "Scanning Probe Lithography. 2. Selective Chemical Vapor Deposition of Copper into Scanning Tunneling Microscope-Defined Patterns," Langmuir, 10(3), 615-18 (1994).|
|5||B.A. Tuttle et al. Editors, Ferroelectric Thin Films IV, Materials Research Society Symposium Proceedings, vol. 361, pp. 155-166; 269-274; 281-286, Symposium held Nov. 29-Dec. 2, 1994.|
|6||E. Kim et al., "Combining Patterned Self-Assembled Monolayers of Alkanethiolates on Gold with Anisotropic Etching of Silicon to Generate Controlled Surface Morphologies," J. Electrochem. Soc., vol. 142, No. 2, pp. 628-633, Feb. 1995.|
|7||E.A. Dobisz et al., "Self-Assembled Monolayer Films for Nanofabrication," Mat. Res. Soc. Symp. Proc., vol. 380, pp. 23-33, 1995.|
|8||M. J. Hampden-Smith & T.T. Kodas, "Chemical Vapor Deposition of Metals: Part 1. An Overview of CVD Processes," Chem. Vap. Deposition, 1, No. 1, pp. 8-23, 1995.|
|9||M. Kondo, "LiNbO3 Waveguide Devices," Journal of the Ceramic Society of Japan, 101 (1), pp. 38-42. 1993.|
|10||N.L. Jeon et al. "Patterning of dielectric oxide thin layers by microcontact printing of self-assembled monolayers," J. Mater. Res., vol. 10, No. 12, pp. 2996-2999, Dec. 1995.|
|11||N.L. Jeon et al., "Patterned Self-Assembled Monolayers Formed by Microcontact Printing Direct Selective Metalization by Chemical Vapor Deposition on Planar and Nonplanar Substrates," Langmuir, vol. 11, No. 8, pp. 3024-3026, 1995.|
|12||P. Doppelt & T.H. Baum, "Chemical Vapor Deposition of Copper for IC Metallization: Precursor Chemistry and Molecular Structure," MRS Bulletin, pp. 41-48, Aug. 1994.|
|13||S.J. Potochnik et al., "Selective Copper Chemical Vapor Deposition Using Pd-Activated Organosilane Films," Langmuir, vol. 11, No. 6, pp. 1841-1845, Jun. 1995.|
|14||T.P. Moffat and H. Yang, "Patterned Metal Electrodeposition Using an Alkanethiolate Mask," J. Electrochem. Soc., vol. 142, No. 11, pp. 220-222, Nov. 1995.|
|15||X. Cao et al. "Efficient direct diode-laser frequency doubling in quasi-phase-matched LiNbO3 waveguides," Optics Letters, vol. 17, No. 11, pp. 795-797, Jun. 1, 1992.|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US6764768 *||Feb 28, 2001||Jul 20, 2004||Arch Development Corporation||Controlled release composition|
|US6776094 *||Oct 1, 1998||Aug 17, 2004||President & Fellows Of Harvard College||Kit For Microcontact Printing|
|US6790476 *||May 21, 2002||Sep 14, 2004||Sandia Corporation||Method of adhesion between an oxide layer and a metal layer|
|US6845788||Jun 3, 2003||Jan 25, 2005||Entegris, Inc.||Fluid handling component with ultraphobic surfaces|
|US6852390||Jun 3, 2003||Feb 8, 2005||Entegris, Inc.||Ultraphobic surface for high pressure liquids|
|US6875704 *||Sep 30, 2003||Apr 5, 2005||Lg.Philips Lcd Co., Ltd.||Method for forming pattern using printing process|
|US6893966 *||Nov 27, 2002||May 17, 2005||International Business Machines Corporation||Method of patterning the surface of an article using positive microcontact printing|
|US6897015||May 30, 2002||May 24, 2005||Bioforce Nanosciences, Inc.||Device and method of use for detection and characterization of pathogens and biological materials|
|US6905958 *||Jul 25, 2003||Jun 14, 2005||Intel Corporation||Protecting metal conductors with sacrificial organic monolayers|
|US6911276||Sep 15, 2003||Jun 28, 2005||Entegris, Inc.||Fuel cell with ultraphobic surfaces|
|US6911385||Aug 22, 2002||Jun 28, 2005||Kovio, Inc.||Interface layer for the fabrication of electronic devices|
|US6913937 *||Jul 15, 2003||Jul 5, 2005||Seiko Epson Corporation||Memory cell array having ferroelectric capacity, method of manufacturing the same and ferroelectric memory device|
|US6923216||Aug 29, 2003||Aug 2, 2005||Entegris, Inc.||Microfluidic device with ultraphobic surfaces|
|US6936181||Sep 20, 2002||Aug 30, 2005||Kovio, Inc.||Methods for patterning using liquid embossing|
|US6938774||Jun 3, 2003||Sep 6, 2005||Entegris, Inc.||Tray carrier with ultraphobic surfaces|
|US6957608 *||Nov 4, 2002||Oct 25, 2005||Kovio, Inc.||Contact print methods|
|US6976585||Jun 3, 2003||Dec 20, 2005||Entegris, Inc.||Wafer carrier with ultraphobic surfaces|
|US6989290||Nov 15, 2003||Jan 24, 2006||Ari Aviram||Electrical contacts for molecular electronic transistors|
|US6998228||Jun 25, 2002||Feb 14, 2006||Bioforce Nanosciences, Inc.||Method and apparatus for solid state molecular analysis|
|US7008769||Aug 14, 2001||Mar 7, 2006||Bioforce Nanosciences, Inc.||Nanoscale molecular arrayer|
|US7027163||Jan 24, 2003||Apr 11, 2006||General Dynamics Advanced Information Systems, Inc.||Grating sensor|
|US7042488||Sep 26, 2002||May 9, 2006||Fujinon Corporation||Electronic endoscope for highlighting blood vessel|
|US7060448||Oct 4, 2004||Jun 13, 2006||Bioforce Nanosciences, Inc.||Evaluating binding affinities by force stratification and force panning|
|US7067306||Dec 21, 2001||Jun 27, 2006||President & Fellows Of Harvard College||Device containing cytophilic islands that adhere cells separated by cytophobic regions|
|US7068430||May 6, 2004||Jun 27, 2006||Semrock, Inc.||Method of making highly discriminating optical edge filters and resulting products|
|US7087444 *||Dec 16, 2002||Aug 8, 2006||Palo Alto Research Center Incorporated||Method for integration of microelectronic components with microfluidic devices|
|US7123416||Oct 11, 2005||Oct 17, 2006||Semrock, Inc.||Method of making high performance optical edge and notch filters and resulting products|
|US7132225||Nov 13, 2002||Nov 7, 2006||Molecular Imprints, Inc.||Methods of inspecting a lithography template|
|US7150622||Jul 9, 2003||Dec 19, 2006||Molecular Imprints, Inc.||Systems for magnification and distortion correction for imprint lithography processes|
|US7178378||Aug 28, 2003||Feb 20, 2007||Bioscale, Inc.||Resonant sensor and sensing system|
|US7179079||Jul 7, 2003||Feb 20, 2007||Molecular Imprints, Inc.||Conforming template for patterning liquids disposed on substrates|
|US7220452||May 18, 2003||May 22, 2007||Massachusetts Institute Of Technology||Multilayer transfer patterning using polymer-on-polymer stamping|
|US7261830||Oct 16, 2003||Aug 28, 2007||Molecular Imprints, Inc.||Applying imprinting material to substrates employing electromagnetic fields|
|US7288394 *||Sep 23, 2003||Oct 30, 2007||President & Fellows Of Harvard College||Selective deposition of materials on countoured surfaces|
|US7307118||Feb 28, 2005||Dec 11, 2007||Molecular Imprints, Inc.||Composition to reduce adhesion between a conformable region and a mold|
|US7309658 *||Nov 22, 2005||Dec 18, 2007||Intermolecular, Inc.||Molecular self-assembly in substrate processing|
|US7315068||Mar 9, 2005||Jan 1, 2008||Kovio Inc.||Interface layer for the fabrication of electronic devices|
|US7323130||Dec 12, 2003||Jan 29, 2008||Molecular Imprints, Inc.||Magnification correction employing out-of-plane distortion of a substrate|
|US7344832||Dec 30, 2003||Mar 18, 2008||Bioforce Nanosciences, Inc.||Method and apparatus for molecular analysis in small sample volumes|
|US7364675||Nov 4, 2003||Apr 29, 2008||The Ohio State University Research Foundation||Self-folding polymer microparticles|
|US7368377 *||Dec 7, 2005||May 6, 2008||Interuniversitair Microelektronica Centrum (Imec) Vzw||Method for selective deposition of a thin self-assembled monolayer|
|US7442336||Aug 21, 2003||Oct 28, 2008||Molecular Imprints, Inc.||Capillary imprinting technique|
|US7455667||Oct 26, 2005||Nov 25, 2008||Microchips, Inc.||Controlled release device and method using electrothermal ablation|
|US7465678||Jan 17, 2006||Dec 16, 2008||The Trustees Of Princeton University||Deformable organic devices|
|US7491286 *||Jan 21, 2004||Feb 17, 2009||International Business Machines Corporation||Patterning solution deposited thin films with self-assembled monolayers|
|US7491892||Mar 28, 2003||Feb 17, 2009||Princeton University||Stretchable and elastic interconnects|
|US7618510 *||May 20, 2004||Nov 17, 2009||The Regents Of The University Of Michigan||Imprinting polymer film on patterned substrate|
|US7648844||May 2, 2006||Jan 19, 2010||Bioscale, Inc.||Method and apparatus for detection of analyte using an acoustic device|
|US7649196||Nov 3, 2005||Jan 19, 2010||Massachusetts Institute Of Technology||Light emitting device|
|US7650050||Dec 8, 2005||Jan 19, 2010||Alstom Technology Ltd.||Optical sensor device for local analysis of a combustion process in a combustor of a thermal power plant|
|US7682817||Dec 23, 2004||Mar 23, 2010||Kimberly-Clark Worldwide, Inc.||Microfluidic assay devices|
|US7728436||Jan 9, 2008||Jun 1, 2010||Imec||Method for selective deposition of a thin self-assembled monolayer|
|US7741014||Apr 10, 2006||Jun 22, 2010||President And Fellows Of Harvard College||Patterning and alteration of molecules|
|US7749445||Dec 19, 2006||Jul 6, 2010||Bioscale, Inc.||Method and apparatus for analyzing bioprocess fluids|
|US7759407||Jul 22, 2005||Jul 20, 2010||Molecular Imprints, Inc.||Composition for adhering materials together|
|US7781555 *||Aug 13, 2008||Aug 24, 2010||Shin-Etsu Chemical Co., Ltd.||Microcontact printing stamp|
|US7790631 *||Nov 21, 2006||Sep 7, 2010||Intel Corporation||Selective deposition of a dielectric on a self-assembled monolayer-adsorbed metal|
|US7799422||Nov 3, 2005||Sep 21, 2010||Massachusetts Institute Of Technology||Absorbing film|
|US7807082 *||Jun 19, 2006||Oct 5, 2010||Lg Display Co., Ltd.||Apparatus for fabricating flat panel display device and method for fabricating thereof|
|US7875197||Aug 6, 2008||Jan 25, 2011||President And Fellows Of Harvard College||Methods of etching articles via microcontact printing|
|US7875313||Apr 5, 2007||Jan 25, 2011||E. I. Du Pont De Nemours And Company||Method to form a pattern of functional material on a substrate using a mask material|
|US7906180||Aug 23, 2006||Mar 15, 2011||Molecular Imprints, Inc.||Composition for an etching mask comprising a silicon-containing material|
|US7910151||Oct 27, 2005||Mar 22, 2011||Microchips, Inc.||Method for making device for controlled reservoir opening by electrothermal ablation|
|US7939131||Aug 16, 2004||May 10, 2011||Molecular Imprints, Inc.||Method to provide a layer with uniform etch characteristics|
|US7943089||Dec 19, 2003||May 17, 2011||Kimberly-Clark Worldwide, Inc.||Laminated assay devices|
|US7968804||Dec 20, 2006||Jun 28, 2011||3M Innovative Properties Company||Methods of patterning a deposit metal on a substrate|
|US7981481||Dec 8, 2006||Jul 19, 2011||Molecular Imprints, Inc.||Method for controlling distribution of fluid components on a body|
|US7993905||Jul 1, 2008||Aug 9, 2011||President And Fellows Of Harvard College||Device containing cytophilic islands that adhere cells separated by cytophobic regions|
|US8017183 *||Sep 26, 2007||Sep 13, 2011||Eastman Kodak Company||Organosiloxane materials for selective area deposition of inorganic materials|
|US8049183||Nov 7, 2008||Nov 1, 2011||Carnegie Mellon University||Apparatuses and methods for control and self-assembly of particles into adaptable monolayers|
|US8076386||Feb 23, 2004||Dec 13, 2011||Molecular Imprints, Inc.||Materials for imprint lithography|
|US8097535||Aug 31, 2007||Jan 17, 2012||Nxp B.V.||Fabrication of self-assembled nanowire-type interconnects on a semiconductor device|
|US8120114||Dec 27, 2006||Feb 21, 2012||Intel Corporation||Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate|
|US8182982||Apr 1, 2009||May 22, 2012||Rolith Inc||Method and device for patterning a disk|
|US8192920 *||Apr 24, 2009||Jun 5, 2012||Rolith Inc.||Lithography method|
|US8211092||Oct 1, 2008||Jul 3, 2012||Microchips, Inc.||Containment device with multi-layer reservoir cap structure|
|US8232722||Feb 15, 2006||Jul 31, 2012||Massachusetts Institute Of Technology||Light emitting devices including semiconductor nanocrystals|
|US8242011 *||Jan 11, 2011||Aug 14, 2012||Taiwan Semiconductor Manufacturing Company, Ltd.||Method of forming metal pillar|
|US8334217||Jun 8, 2009||Dec 18, 2012||Rolith Inc.||Material deposition over template|
|US8349241||Oct 4, 2002||Jan 8, 2013||Molecular Imprints, Inc.||Method to arrange features on a substrate to replicate features having minimal dimensional variability|
|US8354280||Sep 5, 2008||Jan 15, 2013||Bioscale, Inc.||Reusable detection surfaces and methods of using same|
|US8361546||Oct 27, 2009||Jan 29, 2013||Molecular Imprints, Inc.||Facilitating adhesion between substrate and patterned layer|
|US8399317||Oct 14, 2011||Mar 19, 2013||Intel Corporation||Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate, and method therefor|
|US8414962||Oct 28, 2005||Apr 9, 2013||The Penn State Research Foundation||Microcontact printed thin film capacitors|
|US8425102 *||May 2, 2005||Apr 23, 2013||Modilis Holdings Llc||Ultrathin lighting element|
|US8425789||Oct 1, 2009||Apr 23, 2013||Rolith, Inc.||Method and apparatus for anisotropic etching|
|US8434793||Jul 21, 2008||May 7, 2013||Swagelok Company||Coated seals|
|US8470617||Oct 6, 2008||Jun 25, 2013||Qd Vision, Inc.||Composition including material, methods of depositing material, articles including same and systems for depositing material|
|US8518633||Apr 1, 2009||Aug 27, 2013||Rolith Inc.||Large area nanopatterning method and apparatus|
|US8525022||Jan 9, 2009||Sep 3, 2013||Massachusetts Institute Of Technology||High efficiency multi-layer photovoltaic devices|
|US8536667||Dec 23, 2011||Sep 17, 2013||Mc10, Inc.||Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy|
|US8536776||May 7, 2010||Sep 17, 2013||Massachusetts Institute Of Technology||Light emitting device including semiconductor nanocrystals|
|US8557351||Jul 22, 2005||Oct 15, 2013||Molecular Imprints, Inc.||Method for adhering materials together|
|US8610232||Sep 22, 2008||Dec 17, 2013||Qd Vision, Inc.||Hyperspectral imaging device|
|US8643058||Jul 31, 2007||Feb 4, 2014||Massachusetts Institute Of Technology||Electro-optical device including nanocrystals|
|US8647522||Jun 17, 2010||Feb 11, 2014||3M Innovative Properties Company||Methods of wet etching a self-assembled monolayer patterned substrate and metal patterned articles|
|US8679888||Sep 24, 2009||Mar 25, 2014||The Board Of Trustees Of The University Of Illinois||Arrays of ultrathin silicon solar microcells|
|US8697562||Jun 23, 2011||Apr 15, 2014||Richard L. McCreery||Metal contacts for molecular device junctions and surface-diffusion-mediated deposition|
|US8729460||Sep 28, 2011||May 20, 2014||Carnegie Mellon University||Apparatuses and methods for control and self-assembly of particles into adaptable monolayers|
|US8764996 *||Oct 18, 2006||Jul 1, 2014||3M Innovative Properties Company||Methods of patterning a material on polymeric substrates|
|US8808808||Apr 12, 2007||Aug 19, 2014||Molecular Imprints, Inc.||Method for imprint lithography utilizing an adhesion primer layer|
|US8809876||Feb 14, 2007||Aug 19, 2014||Massachusetts Institute Of Technology||Absorbing film|
|US8828480||Mar 12, 2013||Sep 9, 2014||The Penn State Research Foundation||Microcontact printed thin film capacitors|
|US8835941||Feb 8, 2007||Sep 16, 2014||Qd Vision, Inc.||Displays including semiconductor nanocrystals and methods of making same|
|US8846195||Dec 2, 2008||Sep 30, 2014||Canon Nanotechnologies, Inc.||Ultra-thin polymeric adhesion layer|
|US8852526||Jul 10, 2009||Oct 7, 2014||Monash University||Method of fabricating microfluidic systems|
|US8858813||Dec 2, 2009||Oct 14, 2014||3M Innovative Properties Company||Patterning process|
|US8864359||Nov 30, 2012||Oct 21, 2014||Modilis Holdings Llc||Ultrathin lighting element|
|US8878162 *||Jan 31, 2008||Nov 4, 2014||Imperial Innovations Limited||Method of depositing organic layers onto a substrate|
|US8886334||Dec 11, 2009||Nov 11, 2014||Mc10, Inc.||Systems, methods, and devices using stretchable or flexible electronics for medical applications|
|US8891575||Nov 29, 2005||Nov 18, 2014||Massachusetts Institute Of Technology||Optical feedback structures and methods of making|
|US8901263||Dec 2, 2009||Dec 2, 2014||3M Innovative Properties Company||Amide-linked perfluoropolyether thiol compounds and processes for their preparation and use|
|US8906804||Jun 24, 2013||Dec 9, 2014||Qd Vision, Inc.||Composition including material, methods of depositing material, articles including same and systems for depositing materials|
|US8941299||May 18, 2007||Jan 27, 2015||Massachusetts Institute Of Technology||Light emitting device including semiconductor nanocrystals|
|US8950324||Dec 17, 2010||Feb 10, 2015||3M Innovative Properties Company||Apparatus and method for microcontact printing using a pressurized roller|
|US8969127 *||Oct 17, 2008||Mar 3, 2015||Novalia Ltd||Apparatus for and method of fabricating an electronic device by transfer of material onto a substrate|
|US9011798||Aug 10, 2009||Apr 21, 2015||Monash University||Switches for microfluidic systems|
|US9027480||Dec 15, 2008||May 12, 2015||3M Innovative Properties Company||Ink solutions for microcontact printing|
|US9034669||Oct 6, 2008||May 19, 2015||Qd Vision, Inc.||Methods of depositing nanomaterial and methods of making a device|
|US9054329||Nov 24, 2008||Jun 9, 2015||Qd Vision, Inc.||Light-emitting devices and displays with improved performance|
|US9069244||Feb 14, 2013||Jun 30, 2015||Rolith, Inc.||Mask for near-field lithography and fabrication the same|
|US9105782 *||Feb 5, 2014||Aug 11, 2015||The Board Of Trustees Of The University Of Illinois||Arrays of ultrathin silicon solar microcells|
|US9120149||Dec 19, 2008||Sep 1, 2015||Qd Vision, Inc.||Methods and articles including nanomaterial|
|US9159635||May 27, 2012||Oct 13, 2015||Mc10, Inc.||Flexible electronic structure|
|US9168094||Mar 15, 2013||Oct 27, 2015||Mc10, Inc.||Catheter device including flow sensing|
|US9171794||Mar 15, 2013||Oct 27, 2015||Mc10, Inc.||Embedding thin chips in polymer|
|US9223202||Jul 9, 2007||Dec 29, 2015||Board Of Regents, The University Of Texas System||Method of automatic fluid dispensing for imprint lithography processes|
|US9289132||Oct 7, 2009||Mar 22, 2016||Mc10, Inc.||Catheter balloon having stretchable integrated circuitry and sensor array|
|US9295842||Jan 3, 2014||Mar 29, 2016||Mc10, Inc.||Catheter or guidewire device including flow sensing and use thereof|
|US9390920||Dec 8, 2014||Jul 12, 2016||Qd Vision, Inc.||Composition including material, methods of depositing material, articles including same and systems for depositing material|
|US9431623||Aug 5, 2010||Aug 30, 2016||Qd Vision, Inc.||Flexible devices including semiconductor nanocrystals, arrays, and methods|
|US9525148||Apr 6, 2012||Dec 20, 2016||Qd Vision, Inc.||Device including quantum dots|
|US9550614||Jun 1, 2012||Jan 24, 2017||Massachusetts Institute Of Technology||Light emitting device including semiconductor nanocrystals|
|US9574134 *||May 7, 2010||Feb 21, 2017||Massachusetts Institute Of Technology||Light emitting device including semiconductor nanocrystals|
|US9629586||Oct 20, 2014||Apr 25, 2017||Mc10, Inc.||Systems, methods, and devices using stretchable or flexible electronics for medical applications|
|US9640686||Jan 29, 2014||May 2, 2017||Massachusetts Institute Of Technology||Electro-optical device|
|US20020076927 *||Aug 14, 2001||Jun 20, 2002||Eric Henderson||Nanoscale molecular arrayer|
|US20020094572 *||Dec 21, 2001||Jul 18, 2002||Rahul Singhvi||Method of formation of microstamped patterns of plates for adhesion of cells and other biological materials, devices and uses therefor|
|US20020098426 *||Jul 16, 2001||Jul 25, 2002||Sreenivasan S. V.||High-resolution overlay alignment methods and systems for imprint lithography|
|US20020119305 *||Feb 28, 2001||Aug 29, 2002||Milan Mrksich||Controlled release composition|
|US20020123135 *||Apr 22, 2002||Sep 5, 2002||Eric Henderson||Nanoscale molecular arrayer|
|US20020172943 *||May 30, 2002||Nov 21, 2002||Henderson Eric R.||Device and method of use for detection and characterization of pathogens and biological materials|
|US20020197854 *||May 16, 2002||Dec 26, 2002||Bard Allen J.||Selective deposition of materials for the fabrication of interconnects and contacts on semiconductor devices|
|US20030013111 *||Jun 25, 2002||Jan 16, 2003||Eric Henderson||Method and apparatus for solid state molecular analysis|
|US20030070569 *||Dec 4, 2001||Apr 17, 2003||Colin Bulthaup||Micro-stencil|
|US20030071895 *||Sep 26, 2002||Apr 17, 2003||Fuji Photo Optical Co., Ltd.||Electronic endoscope for highlighting blood vessel|
|US20030073250 *||Aug 21, 2002||Apr 17, 2003||Eric Henderson||Method and apparatus for solid state molecular analysis|
|US20030082485 *||Sep 20, 2002||May 1, 2003||Colin Bulthaup||Methods for patterning using liquid embossing|
|US20030134273 *||Jul 17, 2002||Jul 17, 2003||Eric Henderson||Combined molecular binding detection through force microscopy and mass spectrometry|
|US20030152703 *||Oct 31, 2002||Aug 14, 2003||Hammond Paula T.||Production of chemically patterned surfaces using polymer-on-polymer stamping|
|US20030186311 *||Apr 30, 2003||Oct 2, 2003||Bioforce Nanosciences, Inc.||Parallel analysis of molecular interactions|
|US20030196987 *||Oct 14, 2002||Oct 23, 2003||Moriss Kung||Ultra fine patterning process for multi-layer substrate|
|US20030205657 *||May 1, 2002||Nov 6, 2003||Voisin Ronald D.||Methods of manufacturing a lithography template|
|US20030205658 *||Nov 13, 2002||Nov 6, 2003||Molecular Imprints, Inc.||Methods of inspecting a lithography template|
|US20040014247 *||Jul 15, 2003||Jan 22, 2004||Seiko Epson Corporation||Memory cell array having ferroelectric capacity, method of manufacturing the same and ferroelectric memory device|
|US20040021254 *||Aug 1, 2002||Feb 5, 2004||Sreenivasan Sidlgata V.||Alignment methods for imprint lithography|
|US20040038552 *||Aug 23, 2002||Feb 26, 2004||Watts Michael P.C.||Method for fabricating bulbous-shaped vias|
|US20040048316 *||Aug 8, 2003||Mar 11, 2004||Haffner Curt Dale||Assays for ligands for nuclear receptors|
|US20040065976 *||Oct 4, 2002||Apr 8, 2004||Sreenivasan Sidlgata V.||Method and a mold to arrange features on a substrate to replicate features having minimal dimensional variability|
|US20040086709 *||May 18, 2003||May 6, 2004||Hammond Cunningham Paula T.||Multilayer transfer patterning using polymer-on-polymer stamping|
|US20040089979 *||Nov 13, 2002||May 13, 2004||Molecular Imprints, Inc.||Method of reducing pattern distortions during imprint lithography processes|
|US20040090611 *||Nov 13, 2002||May 13, 2004||Molecular Imprints, Inc.||Chucking system for modulating shapes of substrates|
|US20040102050 *||Nov 27, 2002||May 27, 2004||International Business Machines Corporation||Method of patterning the surface of an article using positive microcontact printing|
|US20040106190 *||Dec 3, 2002||Jun 3, 2004||Kimberly-Clark Worldwide, Inc.||Flow-through assay devices|
|US20040112861 *||Dec 11, 2002||Jun 17, 2004||Molecular Imprints, Inc.||Method for modulating shapes of substrates|
|US20040115279 *||Sep 5, 2003||Jun 17, 2004||The Ohio State University||Microfabrication of polymer microparticles|
|US20040115861 *||Dec 16, 2002||Jun 17, 2004||Palo Alto Research Center Incorporated||Method for integration of microelectronic components with microfluidic devices|
|US20040121614 *||Sep 30, 2003||Jun 24, 2004||Lg. Philips Lcd Co., Ltd.||Method for forming pattern using printing process|
|US20040124566 *||Jul 11, 2002||Jul 1, 2004||Sreenivasan Sidlgata V.||Step and repeat imprint lithography processes|
|US20040145752 *||Jan 24, 2003||Jul 29, 2004||David Angeley||Grating sensor|
|US20040146792 *||Dec 12, 2003||Jul 29, 2004||Molecular Imprints, Inc.||Magnification correction employing out-of-plane distortion of a substrate|
|US20040156988 *||Aug 12, 2003||Aug 12, 2004||Mehenti Neville Z.||Selective and alignment-free molecular patterning of surfaces|
|US20040159633 *||Feb 11, 2004||Aug 19, 2004||President & Fellows Of Harvard University||Methods of etching articles via micro contact printing|
|US20040163758 *||Jan 21, 2004||Aug 26, 2004||International Business Machines Corporation||Patterning solution deposited thin films with self-assembled monolayers|
|US20040168613 *||Feb 27, 2003||Sep 2, 2004||Molecular Imprints, Inc.||Composition and method to form a release layer|
|US20040171135 *||Sep 23, 2003||Sep 2, 2004||President And Fellows Of Harvard College||Selective deposition of materials on countoured surfaces|
|US20040188381 *||Mar 25, 2003||Sep 30, 2004||Molecular Imprints, Inc.||Positive tone bi-layer imprint lithography method|
|US20040191321 *||Nov 4, 2003||Sep 30, 2004||Ohio State University||Self-folding polymer microparticles|
|US20040192082 *||Mar 28, 2003||Sep 30, 2004||Sigurd Wagner||Stretchable and elastic interconnects|
|US20040206410 *||Jun 3, 2003||Oct 21, 2004||Entegris, Inc.||Fluid handling component with ultraphobic surfaces|
|US20040206663 *||Jun 3, 2003||Oct 21, 2004||Entegris, Inc.||Carrier with ultraphobic surfaces|
|US20040208791 *||Jun 3, 2003||Oct 21, 2004||Entegris, Inc.||Ultraphobic surface for high pressure liquids|
|US20040209047 *||Aug 29, 2003||Oct 21, 2004||Extrand Charles W.||Microfluidic device with ultraphobic surfaces|
|US20040209139 *||Sep 15, 2003||Oct 21, 2004||Entegris, Inc.||Fuel cell with ultraphobic surfaces|
|US20040211754 *||Apr 25, 2003||Oct 28, 2004||Molecular Imprints, Inc.||Method of forming stepped structures employing imprint lithography|
|US20040250945 *||Sep 29, 2003||Dec 16, 2004||Industrial Technology Research Institute||Method for and apparatus for bonding patterned imprint to a substrate by adhering means|
|US20040256311 *||Apr 14, 2004||Dec 23, 2004||Extrand Charles W.||Ultralyophobic membrane|
|US20040256764 *||Jun 17, 2003||Dec 23, 2004||University Of Texas System Board Of Regents||Method to reduce adhesion between a conformable region and a pattern of a mold|
|US20050005676 *||Aug 28, 2003||Jan 13, 2005||Bioscale, Inc.||Resonant sensor and sensing system|
|US20050006343 *||Jul 9, 2003||Jan 13, 2005||Molecular Imprints, Inc.||Systems for magnification and distortion correction for imprint lithography processes|
|US20050020058 *||Jul 25, 2003||Jan 27, 2005||Gracias David H.||Protecting metal conductors with sacrificial organic monolayers|
|US20050028618 *||Aug 20, 2004||Feb 10, 2005||Molecular Imprints, Inc.||System for determining characteristics of substrates employing fluid geometries|
|US20050051698 *||Jul 7, 2003||Mar 10, 2005||Molecular Imprints, Inc.||Conforming template for patterning liquids disposed on substrates|
|US20050059091 *||Oct 4, 2004||Mar 17, 2005||Bioforce Nanosciences, Inc.||Evaluating binding affinities by force stratification and force panning|
|US20050061773 *||Aug 21, 2003||Mar 24, 2005||Byung-Jin Choi||Capillary imprinting technique|
|US20050067379 *||Sep 25, 2003||Mar 31, 2005||Molecular Imprints, Inc.||Imprint lithography template having opaque alignment marks|
|US20050082253 *||Oct 16, 2003||Apr 21, 2005||Molecular Imprints, Inc.||Applying imprinting material to substrates employing electromagnetic fields|
|US20050084804 *||Oct 16, 2003||Apr 21, 2005||Molecular Imprints, Inc.||Low surface energy templates|
|US20050106321 *||Nov 14, 2003||May 19, 2005||Molecular Imprints, Inc.||Dispense geometery to achieve high-speed filling and throughput|
|US20050106804 *||Nov 15, 2003||May 19, 2005||Ari Aviram||Electrical contacts for molecular electronic transistors|
|US20050118338 *||May 3, 2004||Jun 2, 2005||Johns Hopkins University||Control of the spatial distribution and sorting of micro-or nano-meter or molecular scale objects on patterned surfaces|
|US20050127515 *||Dec 11, 2003||Jun 16, 2005||Andreas Knorr||Sidewall sealing of porous dielectric materials|
|US20050136500 *||Dec 19, 2003||Jun 23, 2005||Kimberly-Clark Worldwide; Inc.||Flow-through assay devices|
|US20050136529 *||Dec 19, 2003||Jun 23, 2005||Kimberly-Clark Worldwide, Inc.||Laminated assay devices|
|US20050136550 *||Dec 19, 2003||Jun 23, 2005||Kimberly-Clark Worldwide, Inc.||Flow control of electrochemical-based assay devices|
|US20050145285 *||Oct 29, 2004||Jul 7, 2005||Entegris, Inc||Fluid handling component with ultraphobic surfaces|
|US20050156353 *||Jan 15, 2004||Jul 21, 2005||Watts Michael P.||Method to improve the flow rate of imprinting material|
|US20050160011 *||Jan 20, 2004||Jul 21, 2005||Molecular Imprints, Inc.||Method for concurrently employing differing materials to form a layer on a substrate|
|US20050160934 *||Jan 23, 2004||Jul 28, 2005||Molecular Imprints, Inc.||Materials and methods for imprint lithography|
|US20050164480 *||Mar 9, 2005||Jul 28, 2005||Scott Haubrich||Interface layer for the fabrication of electronic devices|
|US20050187339 *||Feb 23, 2004||Aug 25, 2005||Molecular Imprints, Inc.||Materials for imprint lithography|
|US20050189676 *||Feb 27, 2004||Sep 1, 2005||Molecular Imprints, Inc.||Full-wafer or large area imprinting with multiple separated sub-fields for high throughput lithography|
|US20050192421 *||Feb 27, 2004||Sep 1, 2005||Molecular Imprints, Inc.||Composition for an etching mask comprising a silicon-containing material|
|US20050208268 *||Feb 8, 2005||Sep 22, 2005||Extrand Charles W||Article with ultraphobic surface|
|US20050221081 *||Mar 17, 2005||Oct 6, 2005||Liu Gang-Yu||Stabilization of self-assembled monolayers|
|US20050236739 *||Feb 22, 2005||Oct 27, 2005||Board Of Regents, The University Of Texas System||Step and flash imprint lithography|
|US20050239193 *||Oct 29, 2004||Oct 27, 2005||Bioforce Nanosciences, Inc.||Device and method of use for detection and characterization of microorganisms and microparticles|
|US20050274219 *||Jun 1, 2004||Dec 15, 2005||Molecular Imprints, Inc.||Method and system to control movement of a body for nano-scale manufacturing|
|US20050275311 *||Jun 1, 2004||Dec 15, 2005||Molecular Imprints, Inc.||Compliant device for nano-scale manufacturing|
|US20050276919 *||Jun 1, 2004||Dec 15, 2005||Molecular Imprints, Inc.||Method for dispensing a fluid on a substrate|
|US20060032781 *||Sep 6, 2005||Feb 16, 2006||Entegris, Inc.||Tray carrier with ultraphobic surfaces|
|US20060035029 *||Aug 16, 2004||Feb 16, 2006||Molecular Imprints, Inc.||Method to provide a layer with uniform etch characteristics|
|US20060035234 *||Dec 30, 2003||Feb 16, 2006||Eric Henderson||Method and apparatus for molecular analysis in small sample volumes|
|US20060062922 *||Sep 23, 2004||Mar 23, 2006||Molecular Imprints, Inc.||Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor|
|US20060070880 *||Aug 31, 2005||Apr 6, 2006||Applera Corporation||Methods and apparatus for manipulating separation media|
|US20060100608 *||Oct 26, 2005||May 11, 2006||Uhland Scott A||Controlled release device and method using electrothermal ablation|
|US20060108320 *||Nov 22, 2005||May 25, 2006||Lazovsky David E||Molecular self-assembly in substrate processing|
|US20060108710 *||Feb 28, 2005||May 25, 2006||Molecular Imprints, Inc.||Method to reduce adhesion between a conformable region and a mold|
|US20060111454 *||Feb 28, 2005||May 25, 2006||Molecular Imprints, Inc.||Composition to reduce adhesion between a conformable region and a mold|
|US20060114960 *||Nov 29, 2005||Jun 1, 2006||Snee Preston T||Optical feedback structures and methods of making|
|US20060121199 *||Aug 11, 2005||Jun 8, 2006||Industrial Technology Research Institute||Method of forming a metal thin film in a micro hole by ink-jet printing|
|US20060128142 *||Dec 7, 2005||Jun 15, 2006||Caroline Whelan||Method for selective deposition of a thin self-assembled monolayer|
|US20060137434 *||Dec 23, 2004||Jun 29, 2006||Kimberly-Clark Worldwide, Inc.||Microfluidic assay devices|
|US20060138083 *||Sep 8, 2005||Jun 29, 2006||Declan Ryan||Patterning and alteration of molecules|
|US20060159901 *||Nov 3, 2005||Jul 20, 2006||Jonathan Tischler||Absorbing film|
|US20060169989 *||Jan 17, 2006||Aug 3, 2006||Rabin Bhattacharya||Deformable organic devices|
|US20060196253 *||Feb 17, 2006||Sep 7, 2006||Bioscale, Inc.||Resonant sensor and sensing system|
|US20060196375 *||Oct 20, 2005||Sep 7, 2006||Seth Coe-Sullivan||Method and system for transferring a patterned material|
|US20060228828 *||Apr 11, 2005||Oct 12, 2006||Miller Seth A||Versatile system for selective organic structure production|
|US20060234499 *||Mar 27, 2006||Oct 19, 2006||Akira Kodera||Substrate processing method and substrate processing apparatus|
|US20060286685 *||Jul 18, 2005||Dec 21, 2006||Bioscale, Inc.||Method and apparatus for detection of analyte using a flexural plate wave device and magnetic particles|
|US20070000866 *||Apr 10, 2006||Jan 4, 2007||Declan Ryan||Patterning and alteration of molecules|
|US20070017631 *||Jul 22, 2005||Jan 25, 2007||Molecular Imprints, Inc.||Method for adhering materials together|
|US20070020392 *||Sep 26, 2006||Jan 25, 2007||Applied Microstructures, Inc.||Functional organic based vapor deposited coatings adhered by an oxide layer|
|US20070021520 *||Jul 22, 2005||Jan 25, 2007||Molecular Imprints, Inc.||Composition for adhering materials together|
|US20070056680 *||May 20, 2004||Mar 15, 2007||The Regents Of The University Of Michigan||Imprinting polymer film on patterned substrate|
|US20070103068 *||Feb 15, 2006||May 10, 2007||Bawendi Moungi G||Light emitting devices including semiconductor nanocrystals|
|US20070133921 *||Dec 8, 2005||Jun 14, 2007||Haffner Ken Y||Optical Sensor Device for Local Analysis of a Combustion Process in a Combustor of a Thermal Power Plant|
|US20070141271 *||Dec 8, 2006||Jun 21, 2007||Molecular Imprints, Inc.||Method for controlling distribution of fluid components on a body|
|US20070165181 *||Jun 19, 2006||Jul 19, 2007||Lg.Philips Lcd Co., Ltd.||Apparatus for fabricating flat panel display device and method for fabricating thereof|
|US20070166479 *||Sep 30, 2004||Jul 19, 2007||Robert Drake||Deposition of thin films|
|US20070178658 *||Jun 20, 2005||Aug 2, 2007||Kelley Tommie W||Patterning and aligning semiconducting nanoparticles|
|US20070224700 *||Dec 19, 2006||Sep 27, 2007||Bioscale, Inc.||Method and apparatus for analyzing bioprocess fluids|
|US20070227383 *||Jun 27, 2005||Oct 4, 2007||Koninklijke Philips Electronics, N.V.||Soft Lithographic Stamp with a Chemically Patterned Surface|
|US20070254169 *||Apr 28, 2006||Nov 1, 2007||Kamins Theodore I||Structures including organic self-assembled monolayers and methods of making the structures|
|US20070281371 *||Feb 21, 2007||Dec 6, 2007||Bioscale, Inc.||Method and apparatus for detection of analyte using a flexural plate wave device and magnetic particles|
|US20080001167 *||Oct 20, 2005||Jan 3, 2008||Seth Coe-Sullivan||Light emitting device including semiconductor nanocrystals|
|US20080047930 *||Aug 23, 2006||Feb 28, 2008||Graciela Beatriz Blanchet||Method to form a pattern of functional material on a substrate|
|US20080074050 *||May 18, 2007||Mar 27, 2008||Jianglong Chen||Light emitting device including semiconductor nanocrystals|
|US20080075668 *||Sep 27, 2006||Mar 27, 2008||Goldstein Alan H||Security Device Using Reversibly Self-Assembling Systems|
|US20080083484 *||Sep 28, 2006||Apr 10, 2008||Graciela Beatriz Blanchet||Method to form a pattern of functional material on a substrate|
|US20080095985 *||Oct 18, 2006||Apr 24, 2008||3M Innovative Properties Company||Methods of patterning a material on polymeric substrates|
|US20080095988 *||Oct 18, 2006||Apr 24, 2008||3M Innovative Properties Company||Methods of patterning a deposit metal on a polymeric substrate|
|US20080105979 *||Jan 9, 2008||May 8, 2008||Interuniversitair Microelektronica Centrum (Imec)||Method for selective deposition of a thin self-assembled monolayer|
|US20080110557 *||Nov 15, 2006||May 15, 2008||Molecular Imprints, Inc.||Methods and Compositions for Providing Preferential Adhesion and Release of Adjacent Surfaces|
|US20080116481 *||Nov 21, 2006||May 22, 2008||Sharma Ajay K||Selective deposition of a dielectric on a self-assembled monolayer-adsorbed metal|
|US20080157365 *||Dec 27, 2006||Jul 3, 2008||Andrew Ott||Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate, and method therefor|
|US20080168921 *||Oct 27, 2005||Jul 17, 2008||Uhland Scott A||Method for making device for controlled reservoir opening by electrothermal ablation|
|US20080199816 *||Jul 9, 2007||Aug 21, 2008||The University Of Texas Board Of Regents||Method of Automatic Fluid Dispensing for Imprint Lithography Processes|
|US20080248205 *||Apr 5, 2007||Oct 9, 2008||Graciela Beatriz Blanchet||Method to form a pattern of functional material on a substrate using a mask material|
|US20080266863 *||May 2, 2005||Oct 30, 2008||Oy Modilis Ltd.||Ultrathin Lighting Element|
|US20090001049 *||Aug 6, 2008||Jan 1, 2009||President And Fellows Of Harvard College||Methods of etching articles via microcontact printing|
|US20090011493 *||Jul 1, 2008||Jan 8, 2009||President And Fellows Of Harvard College||Device containing cytophilic islands that adhere cells separated by cytophobic regions|
|US20090030404 *||Oct 1, 2008||Jan 29, 2009||Microchips, Inc.||Containment device with multi-layer reservoir cap structure|
|US20090037004 *||Sep 11, 2008||Feb 5, 2009||Molecular Imprints, Inc.||Method and System to Control Movement of a Body for Nano-Scale Manufacturing|
|US20090062499 *||Aug 13, 2008||Mar 5, 2009||Hiroshi Mogi||Microcontact printing stamp|
|US20090068759 *||Sep 5, 2008||Mar 12, 2009||Bioscale, Inc.||Reusable detection surfaces and methods of using same|
|US20090074594 *||Sep 6, 2005||Mar 19, 2009||Gunther Strasser||Arrangement with a ventilator and a pump|
|US20090081374 *||Sep 26, 2007||Mar 26, 2009||Cheng Yang||Organosiloxane materials for selective area deposition of inorganic materials|
|US20090148856 *||May 2, 2006||Jun 11, 2009||Bioscale, Inc.||Methods and apparatus for therapeutic drug monitoring using an acoustic device|
|US20090148857 *||May 2, 2006||Jun 11, 2009||Bioscale, Inc.||Method and apparatus for detection of analyte using an acoustic device|
|US20090155583 *||Dec 2, 2008||Jun 18, 2009||Molecular Imprints, Inc.||Ultra-thin Polymeric Adhesion Layer|
|US20090174022 *||Sep 22, 2008||Jul 9, 2009||Seth Coe-Sullivan||Hyperspectral imaging device|
|US20090181478 *||Oct 6, 2008||Jul 16, 2009||Marshall Cox||Methods of depositing nanomaterial & methods of making a device|
|US20090215208 *||Oct 6, 2008||Aug 27, 2009||Seth Coe-Sullivan||Composition including material, methods of depositing material, articles including same and systems for depositing material|
|US20090215209 *||Oct 7, 2008||Aug 27, 2009||Anc Maria J||Methods of depositing material, methods of making a device, and systems and articles for use in depositing material|
|US20090251759 *||Dec 9, 2008||Oct 8, 2009||Domash Lawrence H||Materials, thin films, optical filters, and devices including same|
|US20090269705 *||Apr 24, 2009||Oct 29, 2009||Rolith, Inc||Lighography method|
|US20090278141 *||Nov 24, 2008||Nov 12, 2009||Seth Coe-Sullivan||Light-emitting devices and displays with improved performance|
|US20090283742 *||Dec 19, 2008||Nov 19, 2009||Seth Coe-Sullivan||Methods and articles including nanomaterial|
|US20090297989 *||Apr 1, 2009||Dec 3, 2009||Rolith, Inc||Method and device for patterning a disk|
|US20090298296 *||Dec 12, 2005||Dec 3, 2009||Koninklijke Philips Electronics, N.V.||Surface patterning and via manufacturing employing controlled precipitative growth|
|US20090305513 *||Jun 8, 2009||Dec 10, 2009||Rolith, Inc.||Material deposition over template|
|US20090320909 *||Jun 25, 2007||Dec 31, 2009||Alexi Arango||Electro-optical device|
|US20100025595 *||Jul 31, 2007||Feb 4, 2010||Moungi Bawendi||Electro-optical device|
|US20100051901 *||May 21, 2009||Mar 4, 2010||Kazlas Peter T||Light emitting devices and displays with improved performance|
|US20100051967 *||Feb 14, 2007||Mar 4, 2010||Massachusetts Institute Of Technology||Absorbing film|
|US20100052116 *||Aug 31, 2007||Mar 4, 2010||Nxp, B.V.||Fabrication of self-assembled nanowire-type interconnects on a semiconductor device|
|US20100112236 *||Oct 27, 2009||May 6, 2010||Molecular Imprints, Inc.||Facilitating Adhesion Between Substrate and Patterned Layer|
|US20100123885 *||Apr 1, 2009||May 20, 2010||Rolith, Inc||Large area nanopatterning method and apparatus|
|US20100134520 *||Feb 8, 2007||Jun 3, 2010||Seth Coe-Sullivan||Displays including semiconductor nanocrystals and methods of making same|
|US20100140527 *||Jul 21, 2008||Jun 10, 2010||Swagelok Company||Coated seals|
|US20100173494 *||Oct 1, 2009||Jul 8, 2010||Rolith, Inc||Method and apparatus for anisotropic etching|
|US20100203248 *||Apr 26, 2010||Aug 12, 2010||3M Innovative Properties Company||Methods of patterning a deposit metal on a polymeric substrate|
|US20100219401 *||Jan 31, 2008||Sep 2, 2010||Donal Bradley||Deposition of Organic Layers|
|US20100233031 *||May 25, 2010||Sep 16, 2010||Bioscale, Inc.||Method and Apparatus for Analyzing Bioprocess Fluids|
|US20100295028 *||Oct 17, 2008||Nov 25, 2010||Novalia Ltd||Method of Fabricating an Electronic Device|
|US20100298169 *||Aug 5, 2010||Nov 25, 2010||Sony Deutschland Gmbh||Method of patterning molecules on a substrate using a micro-contact printing process|
|US20100298895 *||Dec 11, 2009||Nov 25, 2010||Roozbeh Ghaffari||Systems, methods, and devices using stretchable or flexible electronics for medical applications|
|US20110025224 *||May 7, 2010||Feb 3, 2011||Massachusetts Institute Of Technology||Light emitting device including semiconductor nanocrystals|
|US20110036971 *||Jan 9, 2009||Feb 17, 2011||Massachusetts Institute Of Technology||Photovoltaic devices|
|US20110079273 *||Jan 9, 2009||Apr 7, 2011||Massachusetts Institute Of Technology||Photovoltaic devices|
|US20110080090 *||May 7, 2010||Apr 7, 2011||Massachusetts Institute Of Technology||Light emitting device including semiconductor nanocrystals|
|US20110165412 *||Nov 24, 2010||Jul 7, 2011||Molecular Imprints, Inc.||Adhesion layers in nanoimprint lithograhy|
|US20110210480 *||Apr 14, 2011||Sep 1, 2011||Rolith, Inc||Nanostructures with anti-counterefeiting features and methods of fabricating the same|
|US20110215931 *||Dec 22, 2010||Sep 8, 2011||Mc10, Inc.||Methods and apparatus for assessing head trauma based on conformal sensing of force and/or change in motion of a person's head|
|US20110218756 *||Dec 17, 2010||Sep 8, 2011||Mc10, Inc.||Methods and apparatus for conformal sensing of force and/or acceleration at a person's head|
|US20110218757 *||Dec 22, 2010||Sep 8, 2011||Mc10, Inc.||Methods and apparatus having power control features for conformal sensing of change in motion of a body part|
|US20110226733 *||Dec 2, 2009||Sep 22, 2011||Lijun Zu||Patterning process|
|US20110237765 *||Dec 2, 2009||Sep 29, 2011||Iyer Suresh S||Amide-linked Perfluoropolyether Thiol Compounds and Processes for their Preparation and Use|
|US20120178251 *||Jan 11, 2011||Jul 12, 2012||Taiwan Semiconductor Manufacturing Company, Ltd.||Method of forming metal pillar|
|US20140216524 *||Feb 5, 2014||Aug 7, 2014||John A. Rogers||Arrays of ultrathin silicon solar microcells|
|US20150022731 *||Jan 17, 2014||Jan 22, 2015||Samsung Display Co., Ltd.||Touch screen panel and fabricating method thereof|
|CN1863853B||Sep 30, 2004||Jun 16, 2010||陶氏康宁公司||Deposition of thin films|
|CN102593044A *||Dec 21, 2011||Jul 18, 2012||台湾积体电路制造股份有限公司||Method of forming metal pillar|
|CN102593044B *||Dec 21, 2011||Feb 18, 2015||台湾积体电路制造股份有限公司||Method of forming metal pillar|
|DE102013111372A1 *||Oct 15, 2013||Apr 16, 2015||Technische Universität Braunschweig||Verfahren zur Herstellung eines oberflächenstrukturierten Gegenstands und Verwendung einer adhäsiven Folie|
|DE102013111372B4 *||Oct 15, 2013||Jun 30, 2016||Technische Universität Braunschweig||Verfahren zur Herstellung eines oberflächenstrukturierten Gegenstands|
|EP2254393A1||Oct 21, 2005||Nov 24, 2010||Massachusetts Institute Of Technology||Light emitting device including semiconductor nanocrystals|
|EP2442181A2||May 21, 2007||Apr 18, 2012||Massachusetts Institute Of Technology||Optical structures including nanocrystals|
|EP2498274A1||Oct 21, 2005||Sep 12, 2012||Massachusetts Institute of Technology||Method and system for transferring a patterned material|
|EP2546192A2||Feb 15, 2006||Jan 16, 2013||Massachusetts Institute Of Technology||Light emitting device including semiconductor nanoscrystals|
|WO2004107403A2 *||May 20, 2004||Dec 9, 2004||The Regents Of The University Of Michigan||Imprinting polymer film on patterned substrate|
|WO2004107403A3 *||May 20, 2004||Mar 10, 2005||Yen-Peng Kong||Imprinting polymer film on patterned substrate|
|WO2005033189A1 *||Sep 30, 2004||Apr 14, 2005||Dow Corning Corporation||Deposition of thin films|
|WO2006047215A2||Oct 21, 2005||May 4, 2006||Massachusetts Institute Of Technology||Method and system for transferring a patterned material|
|WO2006047215A3 *||Oct 21, 2005||Jun 15, 2006||Massachusetts Inst Technology||Method and system for transferring a patterned material|
|WO2008127835A1 *||Mar 19, 2008||Oct 23, 2008||Molecular Imprints, Inc.||Method for imprint lithography utilizing an adhesion primer layer|
|WO2009012479A1 *||Jul 21, 2008||Jan 22, 2009||Swagelok Company||Coated seals|
|WO2009143378A1 *||May 21, 2009||Nov 26, 2009||Northwestern University||Generation of photomasks by dip-pen nanolithography|
|WO2010068535A1||Dec 2, 2009||Jun 17, 2010||3M Innovative Properties Company||Patterning process|
|WO2010129887A2||May 7, 2010||Nov 11, 2010||Massachusetts Institute Of Technology||Light emitting device including semiconductor nanocrystals|
|WO2010129889A2||May 7, 2010||Nov 11, 2010||Massachusetts Institute Of Technology||Light emitting device including semiconductor nanocrystals|
|WO2010151471A1||Jun 17, 2010||Dec 29, 2010||3M Innovative Properties Company||Methods of wet etching a self-assembled monolayer patterned substrate and metal patterned articles|
|WO2012089934A1 *||Dec 26, 2011||Jul 5, 2012||Onera (Office National D'etudes Et De Recherches Aerospatiales)||Process for fabricating high-precision objects by high-resolution lithography and dry deposition and objects thus obtained|
|U.S. Classification||438/623, 257/E21.171, 257/E21.597, 438/624, 257/E21.586, 438/778|
|International Classification||C40B60/14, B41M3/00, B05D1/28, G03F7/00, C23C16/04, C23C16/01, H01L21/768, H01L21/285|
|Cooperative Classification||B01J2219/00382, B01J2219/00659, H01L21/76898, C23C16/042, H01L21/76879, B01J2219/00317, B82Y30/00, H01L21/28562, B82Y40/00, G03F7/0002, C23C16/01, B41M3/003, B82Y10/00, C23C16/04, B05D1/283, C40B60/14|
|European Classification||B82Y30/00, B82Y10/00, B41M3/00F, C23C16/04, B82Y40/00, H01L21/768C4B, B05D1/28C, C23C16/01, C23C16/04B, H01L21/285B4H2, G03F7/00A, H01L21/768T|
|Nov 3, 1998||AS||Assignment|
Owner name: PRESIDENT AND FELLOWS OF HARVARD COLLEGE, MASSACHU
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Owner name: BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS, T
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CLEM, PAUL G.;NUZZO, RALPH G.;PAYNE, DAVID A.;REEL/FRAME:009569/0127;SIGNING DATES FROM 19980902 TO 19980922
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