|Publication number||US6587794 B1|
|Application number||US 09/568,286|
|Publication date||Jul 1, 2003|
|Filing date||May 10, 2000|
|Priority date||Jul 30, 1999|
|Also published as||EP1144981A2, EP1144981A3, WO2001009586A2, WO2001009586A3|
|Publication number||09568286, 568286, US 6587794 B1, US 6587794B1, US-B1-6587794, US6587794 B1, US6587794B1|
|Original Assignee||Koninklijke Philips Electronics N.V.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (23), Non-Patent Citations (5), Referenced by (7), Classifications (11), Legal Events (7)|
|External Links: USPTO, USPTO Assignment, Espacenet|
This application claims the benefit of Provisional Application No. 60/146,398 filed Jul. 30, 1999.
The present invention relates generally to the field of measurement methods and devices. More particularly, the present invention relates to the measurement of material properties using optically induced phonons.
Due to a growing need to the semiconductor and other industries to accurately measure properties (e.g., thickness, composition) of structures such as thin films, Impulsive Stimulated Thermal Scattering (ISTS) arose as a useful measurement technique. ISTS is described, for example, in U.S. Pat. Nos. 5,633,711 (entitled MEASUREMENTS OF MATERIAL PROPERTIES WITH OPTICALLY INDUCED PHONONS); 5,546,811 (entitled OPTICAL MEASUREMENT OF STRESS IN THIN FILM SAMPLES); and 5,812,261 (entitled METHOD AND DEVICE FOR MEASURING THE THICKNESS OF OPAQUE AND TRANSPARENT FILMS), the contents of which are herein incorporated by reference.
In measurement systems using ISTS, a pair of laser pulses overlap on the surface of a structure to form an optical interference pattern. The structure absorbs the interference pattern to initiate a response, such as a sound wave (e.g., an acoustic mode), that propagates in a plane of the structure. A second laser pulse or beam diffracts off the acoustic mode to generate a signal beam whose amplitude is modulated. A detector detects the signal beam to generate a signal waveform, which is then sent to a processor that processes the signal waveform to generate a Fourier Transform spectrum that includes a spectral feature (e.g., a Gaussian or Lorentzian peak) that corresponds to a frequency of the fundamental acoustic mode. The frequency of the peak relates to a physical property (e.g., thickness) of the sample.
The accuracy to which the frequency can be measured depends on properties of the signal waveform, as well as other aspects of the reflected and diffracted probe beam. For example, the measured frequency of the fundamental peak in the Fourier Transform spectrum is especially sensitive to parasitically scattered light from the probe beam. This can result in errors in the frequency measured during ISTS, thereby affecting the performance (e.g., repeatability and reproducibility) of the measurement. In addition, measurement of just the fundamental peak only allows one property (e.g., a single thickness) to be measured at a time. This, of course, is a disadvantage, as semiconductor devices typically include multiple thin films, and in these samples it is usually desirable to simultaneously measure the thickness of more than one film, or thickness and another property of interest (e.g., resistivity).
There thus exists in the art a need for systems and methods that can improve the performance and repeatability of thickness measurements, as well as to simultaneously measure more than one property of the sample at a time.
It is an object of the present invention to address the limitations of the conventional systems discussed above.
It is another object of the invention to provide improved methods and systems for measuring properties of samples, particularly those containing thin films and used in the semiconductor industry.
On aspect of the present invention is directed to an ISTS method that initiates, measures, and analyzes both the fundamental acoustic mode and higher-order acoustic modes of a sample under inspection.
Another aspect of the present invention relates to the ability to measure more than one property of a sample by measuring more than one mode of a Fourier transform spectrum simultaneously. Analysis of more than one mode can generate multiple property measurements simultaneously, for example, simultaneously measuring the thickness of two layers of a multilayer structure.
Another aspect of the invention relates to improved measurement repeatability resulting from measuring peaks corresponding to, e.g., a higher-order mode. Compared to the fundamental peak, this higher-order peak typically has a relatively narrow frequency bandwidth; it can therefore be measured with relative precision to improve properties such as measurement repeatability, reproducibility, and accuracy. In addition, the fundamental mode is affected adversely when light is scattered randomly off the surface of the sample. This light broadens the frequency bandwidth of the fundamental peak, thereby reducing the precision to which it can be measured. The frequency corresponding to a harmonic frequency (e.g., 2ω1) is less sensitive to parasitically scattered light than the fundamental frequency (e.g., ω1) and can therefore be measured with better precision.
Yet another aspect of the invention relates to measuring a frequency component of the Fourier transform spectrum, and a decay constant of the time-domain waveform. The decay constant can be related to the resistivity of the measured film, and thus this measurement yields both a thickness and resistivity of the measured sample. In other embodiments the decay constant can be related to the thickness of a second film in the sample.
One preferred embodiment of the present invention is directed to a method for determining properties of a multilayer structure. The method includes the steps of generating at least two excitation pulses, overlapping the two pulses to form an excitation pattern on or in the structure that modulates a probe beam to generate a signal beam, and detecting the modulation-induced signal beam. The signal includes at least two sub-component frequency values (e.g., a fundamental mode and a higher-order mode). The method also includes the step of analyzing the signal to determine at least two properties of the structure.
In a related embodiment, the signal includes a frequency component and a decay constant. The frequency component can be analyzed to determine a thickness of the structure, and the decay constant can be analyzed to determine a sructure's resistivity.
Another embodiment of the present invention is directed to an apparatus for determining a property of a structure. The apparatus includes at least one source of excitation radiation; a measurement system that forms an excitation pattern on or in the structure, using the excitation radiation, that causes a modulation response by at least a portion of the structure; and a detector that detects a signal based upon the modulation response. The signal includes at least one frequency value and at least one harmonic value of the frequency value. Alternatively, the signal is characterized by at least one frequency value and at least one decay constant. The apparatus also includes an analyzer that analyzes the harmonic value or decay constant to determine a property of the structure.
These and other embodiments and aspects of the present invention are exemplified in the following detailed disclosure.
The features and advantages of the present invention can be understood by reference to the detailed description of the preferred embodiments set forth below taken with the drawings, in which:
FIG. 1 is a schematic side view of a system for performing an ISTS measurement;
FIG. 2A is a graph of a time-domain signal waveform generated from more than one acoustic mode;
FIG. 2B is a graph of a Fourier Transform spectrum generated from the signal waveform of FIG. 2A characterized by peaks corresponding to several higher-order modes;
FIG. 3 is a chart of acoustic velocity (m/s) versus acoustic wavenumber (m−1) for a multilayer sample;
FIGS. 4A and 4B are graphs, respectively, of the thickness (Å) of gold and tantalum films contained in a multilayer sample measured across the sample's diameter (mm);
FIG. 5A is a graph of a time-domain signal waveform that is fit with an exponential decay function characterized by an exponential decay constant;
FIG. 5B is a graph of a Fourier Transform spectrum generated from the signal waveform of FIG. 5A; and
FIG. 6 is a graph of the exponential decay constant (ns) similar to that used to fit the data of FIG. 5A versus electrical resistivity (ohm*cm) as measured from a set of copper/oxide/silicon samples.
Referring to FIG. 1, a measurement system 10 (e.g., an ISTS measurement system) is shown. In the system 10 excitation pulses 11, 11′ are overlapped on the surface of a sample 12 to form an excitation pattern 13 that contains alternating light 13A and dark 13B regions. When absorbed by the sample 12, the excitation pattern 13 launches multiple acoustic modes 14. The acoustic modes cause the surface of the sample 12 to ripple. A probe beam 15 then impinges sample 12 and reflects off the surface to form a reflected beam 15′. Portions of probe beam 15 diffract off the surface of sample 12 to form a pair of diffracted beams 16 and 16′. A photodetector 17 collects one or both of the diffracted beams 16 or 16′ to generate an electrical signal 18 characterizing a signal waveform (as depicted in FIG. 2A). An analyzer 19 connected to the photodetector 17 receives the electrical signal 18 and processes it to generate a Fourier transform spectrum (as depicted in FIG. 2B). The processing, for example, can include taking a mathematical derivative of the signal waveform, and then taking a Fourier transform of the mathematical derivative.
Similar ISTS measurement systems and methods are described, for example, U.S. Pat. Nos. 5,633,711 (entitled MEASUREMENTS OF MATERIAL PROPERTIES WITH OPTICALLY INDUCED PHONONS); 5,546,811 (entitled OPTICAL MEASUREMENT OF STRESS IN THIN FILM SAMPLES); and 5,812,261 (entitled METHOD AND DEVICE FOR MEASURING THE THICKNESS OF OPAQUE AND TRANSPARENT FILMS), the contents of which have been previously incorporated by reference.
The analyzer 19 typically includes a processor/controller (e.g., a computer), a memory for storing data and an interface unit for receiving the electrical signal. The analyzer 19 may also include a network connection for interfacing to a data network, such as a variable-bandwidth network or the Internet, a display for displaying information to a user, a keyboard for inputting text and user commands, a mouse for positioning a cursor on the display and for inputting user commands, a disk drive for reading from and writing to floppy disks installed therein, and a CD-ROM drive for accessing information stored on CD-ROM.
In a preferred embodiment, the computations/operations performed by the analyzer 19 are implemented by computer-readable code executed by the analyzer 19. The code may be stored in a memory or read/downloaded from a memory medium such as a CD-ROM or floppy disk. In other embodiments, hardware circuitry may be used in place of, or in combination with, software instructions to implement the invention.
Referring to FIG. 2A, the signal waveform generated from the measurement system 10 in FIG. 1 is a time-domain signal waveform 20. The time-domain signal waveform 20 features oscillations 21 that correspond to the acoustic modes initiated in the sample by the excitation pattern. In some cases, multiple acoustic modes are simultaneously generated and then measured, resulting in a time-domain waveform characterized by a phenomenon called “signal beating”. Signal beating occurs when more than one frequency is included in the time-domain signal waveform. This phenomenon generates additive and subtractive components, and accounts for the fluctuations of the peak amplitudes in time-domain signal waveform 20.
FIG. 2B is a Fourier transform 25 of the time-domain signal waveform 20 in FIG. 2A. The Fourier transform 25 depicts the different frequencies (ω1, ω2, ω1+2, ω1−2, 2ω1) that are contained in the time-domain signal waveform 20 of FIG. 2A. The method for generating a Fourier transform spectrum from a time-domain signal waveform is well known in the art and not described herein in detail.
As shown in FIG. 2B, the Fourier transform spectrum 25 displays five peaks, each of which corresponds to a different frequency. Peaks 26 and 27 corresponds, respectively, to a fundamental acoustic mode (sometimes called a “Rayleigh” mode) of frequency ω1 and a second-order acoustic mode (sometimes called a “Sezawa” mode) of frequency ω2. Peak 29 corresponds to the sum of these two frequencies, i.e., ω1+ω2. Peak 30 corresponds to the difference between those two frequencies, i.e., ω2-ω1. Peak 28 represents the second harmonic of peak 26, i.e., 2ω1.
It is known in the art to generate a single measurement of film thickness from the frequency corresponding to a fundamental acoustic mode, i.e., ω1. This method is described, for example, in U.S. Pat. No. 5,633,711 (entitled MEASUREMENT OF MATERIAL PROPERTIES WITH OPTICALLY INDUCED PHONONS).
It has been unexpectedly discovered that the thickness of two films in a multilayer sample can be determined by analyzing more than one acoustic mode, e.g., ω1 and ω2. Additionally, different peaks of the Fourier transform spectrum 25 can be used to improve upon convention, single-frequency measurements. For example, the frequency corresponding to the second harmonic peak 28 (2ω1) can be divided by a factor of two to find ω1. This operation has the unexpected functional advantage of producing sample measurements with a higher precision than by simply measuring the peak 26 corresponding to ω1. This is because the frequency 2ω1 of peak 28 is less sensitive to parasitically scattered light than the frequency ω1 of peak 26.
It has also been unexpectedly discovered that, for some samples, a time constant describing the decay of the signal waveform relates to the resistivity of the outer film in the sample. Thus, for this measurement, a frequency (e.g., ω1) can be determined to measure the thickness of a film in the sample, and a decay constant can be determined to measure a resitivity of an outer film in the sample.
In a similar fashion, a single frequency (e.g., ω1) can be measured to determine the thickness of a total stack of films (e.g., both a copper and a tantalum film deposited on a silicon wafer). The decay constant can then be measured and related to just the copper film, thereby allowing the thickness of both films to be determined.
Referring again to FIG. 1, two crossed excitation beams 11 and 11′ are used to initiate acoustic waves 14, which in turn can be measured to generate time-dependent signal waveforms (such as those depicted in FIG. 2A). One way to generate the crossed excitation beams 11, 11′ is to pass a single excitation beam (not shown in the figure) through a pattern on an optical element called a “phase mask” (also not shown in the figure). The phase mask selectively diffracts the incident excitation beam into the two excitation beams 11, 11′. Phase masks are described in U.S. Pat. No. 5,734,470 (entitled DEVICE AND METHOD FOR TIME-RESOLVED OPTICAL MEASUREMENTS), the contents of which are incorporated by reference.
When the excitation beams 11, 11′ are overlapped on the sample, they optically interfere to form a spatially and temporally varying excitation pattern 13 on the surface of the sample 12. The excitation pattern 13 contains light 13A and dark 13B regions that are spaced by a well-defined distance (typically between about 5 and 20 microns). The inverse of the spacing multiplied by a factor of 2π is the “wavevector” (typically indicated by the symbol “q”) of the excitation pattern.
Translating the phase mask from one pattern to another adjusts the angle between the two excitation beams 11, 11′. This, in turn, adjusts the fringe spacing and the wavevector of the excitation pattern 13 on the surface of the sample 12. The acoustic frequency depends on the wavevector. Acoustic velocity (v) is defined as the frequency divided by the wavevector, and thus it too depends on the wavevector. Acoustic frequencies measured at multiple wavevectors is called the “dispersion” of the sample.
In a preferred embodiment, ISTS measurements like those described above are made at a single wavevector, and fundamental (ω1) and higher-order modes (ω2) are generated. The frequencies corresponding to these modes are determined by analyzing the Fourier transform spectrum. The thickness of two layers (h1, h2) in the sample is then determined using the linear equations:
where v1 and v2 are the acoustic velocities corresponding to the fundamental and higher-order modes.
Based on these equations, values for h1, h2 can be derived from an analytical model, such as that described in U.S. Pat. No. 5,812,261 (entitled METHOD AND DEVICE FOR MEASURING THE THICKNESS OF OPAQUE AND TRANSPARENT FILMS, the contents of which have been previously incorporated herein by reference) or can be determined empirically using calibration standards.
In another embodiment, ω1 and ω2 are measured at multiple wavevectors to generate dispersion curves of these two modes. The resulting dispersion curves can then be fit by the model functions:
to determine the values of h1 and h2.
As an example of this, FIG. 3 shows a pair of dispersion curves 40, 41 measured from a multilayer sample featuring tantalum/gold/oxide films deposited on an silicon wafer. Each dispersion curve shows a plot of acoustic velocity verses acoustic wavevector. The upper dispersion curve 41 corresponds to the dispersion of the higher-order mode ω2, while the lower dispersion curve 40 corresponds to the dispersion of the fundamental mode ω1. Each circle on the two curves corresponds to a measurement made at a different phase mask (corresponding to a different wavevector). For example, measurement points 42 and 43 represent two data points, generated using two separate phase masks, included in the lower dispersion curve 40 corresponding to ω1. Measurement points 42′, 43′ are included in the upper dispersion curve 41 corresponding to ω2. Both curves are fitted to the “best fit” dispersion curve (40 for ω1; 41 for ω2), shown as a solid line, that is described by a function shown in equations 3 and 4, above. The two thickness values of the sample are derived from the fitting function.
FIGS. 4A and 4B are plots that show data resulting from analysis of fundamental and higher-order modes measured at a single wavevector. The sample used for these measurements is the same as that used to generate the data for FIG. 3. The resulting data, in this case the thickness of both the gold (curve 60 in FIG. 4A) and tantalum (curve 62 in FIG. 4B) layers, are measured across the diameter of the sample. To generate the data points in FIGS. 4A and 4B, a measurement was made and the sample was translated; this process was repeated until measurements were made across the sample's diameter. As shown by the plots, the overlying gold film has a slight, inverted curvature, while the tantalum film is relatively flat.
In addition to higher-order modes, other properties of both the time-domain waveforms, such as decay time, can be analyzed to determine additional properties of the sample, such as electrical resistivity. To illustrate this point, FIGS. 5A and 5B show, respectively, a time-domain waveform 100 and the corresponding Fourier transform 104 measured from a copper/oxide/silicon structure. The time-domain waveform 100 has been fit with a dashed line 102 that represents the following mathematical function f(t):
where A is the amplitude of the function, γ is its decay time, and t represents the variable for time.
It can be shown that for some samples (e.g., those containing copper films) measured with ISTS, like that described above, the decay time γ is related to the electrical resistivity of the copper film. In this model, the outer metal film (typically 1000 Å to 1 micron) is assumed to be very thin compared to the acoustic wavelength (typically 5-20 microns), and the thermal conductivity of the oxide can be disregarded. In this case, only the lateral heat transport in the metal film is relevant. For this model, the decay time γ of the ISTS signal is given by
where τ is the thermal conductivity of the metal and q is the acoustic wavevector. In good electrical conductors such as copper, the ratio of the thermal conductivity to electrical conductivity σ at a given temperature T is a material-independent constant (this is sometimes called the Wiedemann-Franz law):
where L is a constant called Lorentz number. Thus, for copper, the signal decay time can be expected to be approximately proportional to the electrical resistivity:
Equations 6-8 are verified by the data shown in FIG. 6. Here, a set (6 samples) of copper/oxide/silicon structure, each having an outer film of copper with a different thickness and a constant oxide thickness, were measured using ISTS to determine the decay constant (in units of ns). The same films were also measured with a combination of a 4-point probe (which measures sheet resistivity in units of Ω per area) and Grazing Incidence X-ray reflection (which measures absolute thickness). The resistivity (in units of Ω*cm) of the copper films was determined by multiplying the film thickness by the sheet resistivity. The decay time measured from the copper films using ISTS was then plotted as a function of the resistivity.
The data plotted in FIG. 6 clearly indicates that the decay time increases in a nearly linear fashion with the electrical resistivity. In this plot, data points 114 correspond to each of the 6 samples. A dashed line 112 is drawn through the data to indicate the linear dependence of the data.
To make an actual measurement, data like that shown in the figure can be stored in a “look-up” table; when an actual measurement is made, the decay time g can be determined by fitting the signal waveform to a function similar to that shown in equation 5. This value can then be compared to the look-up table to determine electrical resistivity. Alternatively, the relationship between decay time and resistivity could be represented by a mathematical function coded into a computer program. Once determined, the decay constant could be input to the computer program to determine the resistivity. In both cases, this means that in a single measurement the film thickness can be determined by analyzing the acoustic frequency, and the resistivity can be determined by analyzing the decay time.
Similar measurements of thickness and resistivity can be made on patterned copper “Damascene” features, as described in pending U.S. Patent Application Ser. No. 09/067,411 (entitled METHOD AND DEVICE FOR MEASURING THE THICKNESS OF THIN FILMS NEAR A SAMPLES'S EDGE AND IN A DAMASCENE-TYPE STRUCTURE), the contents of which are incorporated herein by reference.
While the present invention has been described above in terms of specific embodiments, it is to be understood that the invention is not intended to be confined or limited to the embodiments disclosed herein. On the contrary, the present invention is intended to cover various methods, structures and modifications thereof included within the spirit and scope of the appended claims.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US4952061 *||Jun 27, 1988||Aug 28, 1990||Infrared Engineering Limited||Method and apparatus for sensing or determining one or more properties or the identity of a sample|
|US5442676 *||Dec 16, 1993||Aug 15, 1995||U.S. Philips Corporation||Method of determining a given characteristic of a material sample|
|US5490728 *||Jan 12, 1994||Feb 13, 1996||Luxtron Corporation||Non-contact optical techniques for measuring surface conditions|
|US5546811 *||Jan 24, 1995||Aug 20, 1996||Massachusetts Instittue Of Technology||Optical measurements of stress in thin film materials|
|US5633711 *||Dec 5, 1994||May 27, 1997||Massachusettes Institute Of Technology||Measurement of material properties with optically induced phonons|
|US5672830 *||Dec 11, 1996||Sep 30, 1997||Massachusetts Institute Of Technology||Measuring anisotropic mechanical properties of thin films|
|US5734470 *||Apr 22, 1997||Mar 31, 1998||Massachusetts Institute Of Technology||Device and method for time-resolved optical measurements|
|US5812261 *||Jan 15, 1997||Sep 22, 1998||Active Impulse Systems, Inc.||Method and device for measuring the thickness of opaque and transparent films|
|US5982482 *||Jul 31, 1997||Nov 9, 1999||Massachusetts Institute Of Technology||Determining the presence of defects in thin film structures|
|US6016202 *||Jun 30, 1997||Jan 18, 2000||U.S. Philips Corporation||Method and apparatus for measuring material properties using transient-grating spectroscopy|
|US6052185 *||Jun 30, 1997||Apr 18, 2000||Active Impulse Systems Inc.||Method and apparatus for measuring the concentration of ions implanted in semiconductor materials|
|US6069703 *||May 28, 1998||May 30, 2000||Active Impulse Systems, Inc.||Method and device for simultaneously measuring the thickness of multiple thin metal films in a multilayer structure|
|US6075602 *||May 25, 1999||Jun 13, 2000||Active Impulse Systems, Inc.||Method and apparatus for measuring material properties using transient-grating spectroscopy|
|US6081330 *||Sep 18, 1998||Jun 27, 2000||Active Impulse Systems, Inc.||Method and device for measuring the thickness of opaque and transparent films|
|US6118533 *||Sep 10, 1997||Sep 12, 2000||Active Impulse Systems, Inc.||Method and apparatus for measuring the concentration of ions implanted in semiconductor materials|
|US6122064 *||May 28, 1999||Sep 19, 2000||Philips Electronics North America Corporation||Method for measuring thickness of films|
|US6174739 *||Jun 30, 1999||Jan 16, 2001||Advanced Micro Devices, Inc.||Method of monitoring via and trench profiles during manufacture|
|US6175421 *||May 25, 1999||Jan 16, 2001||Active Impulse Systems||Method and apparatus for measuring material properties using transient-grating spectroscopy|
|US6188478 *||Oct 21, 1998||Feb 13, 2001||Philips Electronics North America Corporation||Method and apparatus for film-thickness measurements|
|US6256100 *||Apr 27, 1998||Jul 3, 2001||Active Impulse Systems, Inc.||Method and device for measuring the thickness of thin films near a sample's edge and in a damascene-type structure|
|US6348967 *||May 11, 2000||Feb 19, 2002||Active Impulse Systems, Inc.||Method and device for measuring the thickness of opaque and transparent films|
|US6366861 *||Apr 25, 1997||Apr 2, 2002||Applied Materials, Inc.||Method of determining a wafer characteristic using a film thickness monitor|
|US6393915 *||Jul 29, 1999||May 28, 2002||Koninklijke Philips Electronics N.V.||Method and device for simultaneously measuring multiple properties of multilayer films|
|1||*||"Thermal Conductivity"; American Institute Of Physics Handbook; Third Edition, 1972, pp. 4-142-4-148.|
|2||*||Banet, M; Fuchs, M; Logan, R A; Nelson, K A; Rogers, J A; "Noncontact Inspection Of Opaque Film Thickness In Single Layer And Multilayer Structures And Edge-Exclusion Zones"; IEEE 1997 Int'nl Symposium on Semiconductor Manufacturing Conf, 1997, pp. 35-37.*|
|3||*||Banet,M; Allen, L P; Nelson, K A; Fuchs, M; Rogers, J A; Akthukal, A ; Maznev A A;"Noncontact Acoustic Wave Metrology Of SOI Substrates"; Proceedings of the IEEE 1998 International Conference on SOI, 1998, pp. 45-46.*|
|4||*||Gostein, M; Bailey, T C; Emesh, I; Diebold, A C; Maznev, A A; Banet, M; Sacco, R;"Thickness Measurement For Cu And Ta Thin Films Using Optoacoustics"; Proceedings of the IEEE 2000 International Conference on Interconnect Technology, 2000, pp. 176-178.*|
|5||*||Rogers, J A; Nelson, K A; "Photoacoustic Determination Of The Residual Stress And Transverse Elastic Moduli In Thin Films Of The Polyimide PMDA/ODA"; IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, vol. 4, Jul. 1995, pp. 555-556.*|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US6882956 *||Oct 30, 2002||Apr 19, 2005||International Business Machines Corporation||Lapping plate topography system|
|US7365864 *||Dec 10, 2003||Apr 29, 2008||Advanced Metrology Systems Llc||Method of determining properties of patterned thin film metal structures using transient thermal response|
|US7499183 *||Jun 23, 2004||Mar 3, 2009||Advanced Metrology Systems, Llc||Method of measuring sub-micron trench structures|
|US20040088137 *||Oct 30, 2002||May 6, 2004||International Business Machines Corporation||Lapping plate topography system|
|US20050128473 *||Jan 21, 2005||Jun 16, 2005||Applied Materials, Inc.||Method and apparatus for article inspection including speckle reduction|
|US20060203876 *||Dec 10, 2003||Sep 14, 2006||Michael Gostein||Method of determining properties of patterned thin film meatal structures using transient thermal response|
|US20080123080 *||Jun 23, 2004||May 29, 2008||Advanced Metrology Systems Llc||Method of Measuring Sub-Micron Trench Structures|
|U.S. Classification||702/28, 702/84|
|International Classification||G01N21/00, G01N21/17, G01B11/06, G01N29/00, G01R27/02|
|Cooperative Classification||G01N21/1702, G01B11/0666|
|European Classification||G01N21/17B, G01B11/06C8|
|May 10, 2000||AS||Assignment|
Owner name: PHILIPS ELECTRONICS NORTH AMERICA, NEW YORK
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MAZNEV, ALEX;REEL/FRAME:010800/0765
Effective date: 20000509
|Apr 3, 2003||AS||Assignment|
Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., NETHERLANDS
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:PHILIPS ELECTRONICS NORTH AMERICA CORPORATION;REEL/FRAME:013536/0664
Effective date: 20030402
|Oct 30, 2006||AS||Assignment|
Owner name: ADVANCED METROLOGY SYSTEMS LLC, MASSACHUSETTS
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:KONINKLIJKE PHILIPS ELECTRONICS N.V.;REEL/FRAME:018454/0090
Effective date: 20061005
|Jan 2, 2007||FPAY||Fee payment|
Year of fee payment: 4
|Feb 7, 2011||REMI||Maintenance fee reminder mailed|
|Jul 1, 2011||LAPS||Lapse for failure to pay maintenance fees|
|Aug 23, 2011||FP||Expired due to failure to pay maintenance fee|
Effective date: 20110701