|Publication number||US6903391 B2|
|Application number||US 10/851,416|
|Publication date||Jun 7, 2005|
|Filing date||May 24, 2004|
|Priority date||Sep 10, 2003|
|Also published as||EP1519416A2, EP1519416A3, US20050051860|
|Publication number||10851416, 851416, US 6903391 B2, US 6903391B2, US-B2-6903391, US6903391 B2, US6903391B2|
|Inventors||Yutaka Takeuchi, Masako Sato, Mariko Nakamura|
|Original Assignee||Fuji Photo Film Co., Ltd.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (9), Referenced by (16), Classifications (13), Legal Events (6)|
|External Links: USPTO, USPTO Assignment, Espacenet|
This application is based on and claims priority of Japanese Patent Applications No. 2003-318355 and No. 2003-318356 both filed on Sep. 10, 2003, the entire contents of which are incorporated herein by reference.
A) Field of the Invention
The present invention relates to a solid state image pickup device, and more particularly to a solid state image pickup device having a wide dynamic range.
B) Description of the Related Art
Solid state image pickup devices are widely used which has a number of photodiode pixels on a semiconductor substrate. As the number of pixels is increased by high integration, the resolution becomes high. Some solid image pickup devices surpass the resolution of silver salt cameras. If a chip area is suppressed from being broadened and the number of pixels is increased, the area occupied by one pixel can be reduced. In order to avoid a low S/N ratio and obtain a high sensitivity, it is desired to efficiently use incidence light.
A light reception area of the semiconductor substrate is required to form not only photodiodes but also charge transfer CCDs for a CCD type, and an image signal forming circuit and an image signal transfer unit for a MOS type. Light incident upon an area excepting the photodiode area is unavailable. In order to efficiently use incidence light, on-chip micro lenses have been formed above pixels.
On-chip micro lenses MLs are formed on a planarizing layer PL formed above the substrate. Each on-chip micro lens has its optical axis aligned with the center of a corresponding photodiode. The micro lenses are formed contacting each other to converge most of incidence light upon photodiodes. By using the on-chip micro lenses, incident light can be used efficiently irrespective of that the light shielding layer exists.
A photodiode accumulates signal charges by an amount corresponding to the incidence light amount. As the charges in the photodiode saturate, the charges generated thereafter by photoelectric conversion of incidence light cannot be accumulated. If the opening through which light becomes incident upon a photodiode is made narrow, although the dynamic range can be increased because of the reduced amount of charges generated by a unit light amount, the sensitivity lowers. If the sensitivity is to be retained, the dynamic range of a solid state image pickup device having photodiode pixels becomes narrower than that of a silver salt film.
A combination of a high sensitivity photoelectric conversion element and a low sensitivity photoelectric conversion element formed in one pixel area has been proposed in order to broaden the dynamic range.
Light not incident upon the on-chip micro lens ML and the narrow opening SA is not used. If an on-chip micro lens covering most of the pixel area such as shown in
The present applicant submitted the application proposing the structure that two photodiodes, a main and a subsidiary photodiode formed in each pixel area, are exposed in a common opening (refer to Japanese Patent Laid-open Publication No. 2003-218343).
In the honeycomb pixel layout shown, pixels on the upper and lower sides of the two pixels shown are disposed at positions shifted by a half pitch in the lateral direction. Polysilicon electrode 24, 25, 28 and 29 (collectively indicated by EL) for four-phase drive are disposed above VCCD 8. For example, the transfer electrodes 24 and 28 are made of a first polysilicon layer and the transfer electrodes 25 and 29 are made of a second polysilicon layer. The transfer electrode 25 also controls reading charges from the subsidiary photodiode 4, and the transfer electrode 28 also controls reading charges from the main photodiode 3.
As shown in the cross sectional views of
An insulating layer of silicon oxide or the like is formed on the surface of the semiconductor substrate, and the transfer electrodes EL of polysilicon are formed on the insulating layer. The transfer electrodes EL are disposed covering the area above the VCCD channel 8. An insulating layer of silicon oxide or the like is formed covering the transfer electrodes EL. A light shielding film 12 of tungsten or the like is formed on the insulating layer. The light shielding film 12 covers the constituent elements of pixels such as VCCDs and has openings above the photodiodes. An interlayer insulating film 13 of phosphosilicate glass or the like is formed covering the light shielding film 12, the interlayer insulating film 13 having a planarized surface.
A color filter 15 is formed on the interlayer insulating film 13. On-chip micro lenses 16 of resist or the like are formed on the color filter 15 at positions corresponding to the pixels. One on-chip micro lens 16 is formed above each pixel, and an opening 18 of the light shielding film 12 is disposed under the on-chip micro lens 16. The on-chip micro lens 16 has a function of converging downward incident light toward the opening 18.
It is desired to improve the light convergence efficiency because of recent device miniaturization and high integration. It is said that the convergence effect of the on-chip micro lens is now almost at its limit, and various proposals have been made to inserting an in-layer (inner) lens under the on-chip micro lens (for example, refer to Japanese Patent Laid-open Publication No. HEI-11-40787).
An object of this invention is to provide a solid state image pickup device having a broad dynamic range while good device characteristics are retained.
Another object of this invention is to provide a solid state image pickup device having a high incidence light use efficiency and a broad dynamic range.
Still another object of this invention is to provide a solid state image pickup device having a novel structure.
According to one aspect of the present invention, there is provided a solid state image pickup device including: a semiconductor substrate defining light receiving areas; a number of pixels formed in the light receiving areas of the semiconductor substrate, each pixel including a high sensitivity photoelectric conversion element and a low sensitivity photoelectric conversion element; a light shielding film formed above the light receiving areas and having an opening above each pixel, the opening exposing at least a partial area of the high sensitivity photoelectric conversion element and at least a partial area of the low sensitivity photoelectric conversion element; an on-chip micro lens formed above each opening of the light shielding film, the on-chip micro lens converging incidence light; and an inner lens formed between the light shielding film and the on-chip micro lens and above the opening, the inner lens being disposed so that the inner lens receives light converged by the on-chip micro lens, excluding a portion of the light, and further converges the received light to make the portion of the light propagate toward the opening without passing through the inner lens.
A use efficiency of incidence light is maintained high by using the on-chip micro lens. The characteristics of the high sensitivity photoelectric conversion element are maintained good and the use efficiency of incidence light is maintained high, by using the inner lens. One opening per pixel is formed, and a portion of light converged by the on-chip micro lens is made incident upon the low sensitivity photoelectric conversion element without passing it through the inner lens to thereby improve also the characteristics of the low sensitivity photoelectric conversion element.
Embodiments of the invention will be described with reference to the accompanying drawings.
Polysilicon transfer electrodes 10 and 11 are formed on an insulating layer 9 made of an oxide-nitride-oxide (ONO) film or the like formed on the semiconductor substrate surface. A light shielding film 12 of tungsten or the like is formed on an insulating layer covering the transfer electrodes 10 and 11. The light shielding film 12 has an opening 18 in an area corresponding to the central area of each pixel including a main photodiode 3 and a subsidiary photodiode 4. A partial area of the main photodiode 3 and a partial area of the subsidiary photodiode 4 are exposed in the opening to receive incidence light. An aperture ratio of the main photodiode 3 is set larger than that of the subsidiary photodiode 4. Therefore, the subsidiary photodiode has a lower sensitivity than that of the main photodiode, and the subsidiary photodiode is hard to be saturated.
An insulating layer 13 made of a phosphorus glass layer or the like is formed on the light shielding film, the insulating layer having a planarized surface. Inner lenses 14 are formed on the planarized surface of the insulating layer 13. The optical axis of the inner lens 14 is shifted to the right of the center of the opening 18 of the light shielding film, i.e., toward the direction departing from the subsidiary photodiode area 4. The inner lens 14 is formed by depositing a silicon nitride film having a reflectivity of, for example, 1.8 to 2.4, forming a resist pattern on the silicon nitride film, softening and melting the resist pattern to form lens shapes, and thereafter transferring the lens shapes of the resist pattern to the silicon nitride film through anisotropical etching.
After the inner lens 14 is formed, a planarizing film 13 a is formed burying the irregular surface of the inner lenses 14. The planarizing film 13 a has a planarized surface and is made of an organic resin film, a phosphorus glass film, a boron-phosphorus glass film or the like. A color filter 15 is formed on the planarized surface. The color filter 15 includes color filters of three or more colors. A planarizing film 13 b of an organic resin film or the like is formed burying the irregular surface of the color filter 15 and forming a planarized surface.
On-chip micro lenses 16 are formed on the planarized surface of the planarizing film 13 b. For example, the on-chip micro lens 16 is formed by pattering a photoresist layer, softening and melting the patterned photoresist layer to form spherical surfaces, and thereafter curing the photoresist. The optical axis of the on-chip micro lens 16 is aligned approximately to the center of the opening 18 of the light shielding film 12. A light flux converged by the on-chip micro lens 16 propagates toward the opening 18.
The subsidiary photodiode area 4 extends from near the left end of the pixel, via the left end of the opening 18, partially into the opening area 18. The aperture ratio of the subsidiary photodiode 4, the ratio of the subsidiary photodiode area 4 to the area exposed to the opening 18, is set smaller than that of the main photodiode 3.
The larger the aperture ratio of a photodiode, the larger the amount of incidence light is, and hence the higher the sensitivity is. Assuming that the charge accumulation capability per unit area is constant, the saturation light amount can be set higher the lower the aperture ratio is. An effective aperture ratio can be changed by converging incidence light with the on-chip micro lens and inner lens.
The inner lens 14 is shifted to the right of the center of the opening 18 in such a manner that the focal point thereof is positioned in the main photodiode area 3. For example, if the left side of the main photodiode area 3 is spaced from the left side of the opening 18 by a distance d, the inner lens 14 is shifted by d/4 or more, e.g., d/2 or more and d or less from the center of the opening in the same direction.
As shown in
Light converged by the on-chip micro lens 16 but not transmitted through the inner lens 14 passes through the opening 18 and becomes incident upon the surface of the subsidiary photodiode area 4. All of the light not passed through the inner lens 14 may not be incident upon the subsidiary photodiode area 4, but a portion thereof may be incident upon the main photodiode area 3 or upon the separation region 5 between the main and subsidiary photodiode. Since the light converged by the inner lens 14 becomes incident upon the main photodiode area 3, the main photodiode is set to a higher sensitivity and the subsidiary photodiode is set to a lower sensitivity (i.e., to a higher saturation light amount), than those corresponding to the actual aperture ratios.
As shown in
The layout of pixels is not limited to a square matrix.
Four-phase drive electrodes 24, 25, 28 and 29 are disposed along the row direction. A pixel is disposed in a space defined by these drive electrodes. A light shielding film above the transfer electrodes has an opening 18 in an area corresponding to the central area of each pixel. A partial area of the main photodiode area 3 and a partial area of the subsidiary photodiode area 4 are exposed in each opening 18. The aperture ratio of the main photodiode area 3 is set larger than that of the subsidiary photodiode area 4. Therefore, when light at the same intensity becomes incident, the main photodiode area 3 saturates first and then the subsidiary photodiode area 4 saturates.
As shown in
The subsidiary photodiode area 4 is used so as to broaden the dynamic range at a high illuminance, and is used mainly for obtaining image information after the main photodiode area 3 is saturated. The subsidiary photodiode may have a lower precision than the main photodiode. The substrate surface area occupied by the subsidiary photodiode area 4 is set narrower than that of the main photodiode area so as not to lower the performance of the main photodiode.
As shown in
The light incidence angle is constant at each pixel. In order to make light be reliably incident upon the subsidiary photodiode, it is desired to adjust the position of at least the photodiode area at each pixel position.
As shown in
The present invention has been described in connection with the preferred embodiments. The invention is not limited only to the above embodiments. It will be apparent to those skilled in the art that other various modifications, improvements, combinations, and the like can be made.
The solid state image pickup device of this invention is applicable to various apparatuses such as digital cameras and portable terminals, particularly to the apparatuses requiring a wide dynamic range.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US4667092||Dec 22, 1983||May 19, 1987||Nec Corporation||Solid-state image device with resin lens and resin contact layer|
|US6388278 *||Sep 26, 2000||May 14, 2002||Fuji Photo Film Co., Ltd.||Solid state image pickup device and its driving method|
|US6528831 *||Feb 1, 2002||Mar 4, 2003||Fuji Photo Film Co., Ltd.||Solid-state image pickup device|
|US6806904 *||Aug 17, 2000||Oct 19, 2004||Fuji Photo Film Co., Ltd.||Solid-state image pickup device|
|US20030141564||Jan 23, 2003||Jul 31, 2003||Fuji Photo Film Co., Ltd.||Solid state image pickup device with two photosensitive fields per one pixel|
|JP2003218343A||Title not available|
|JPH0455028A||Title not available|
|JPH1140787A||Title not available|
|JPH09205589A||Title not available|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US7297919 *||Nov 1, 2006||Nov 20, 2007||Sony Corporation||Solid-state image pickup device and image pickup camera having shifted wiring openings|
|US7450161||Dec 2, 2004||Nov 11, 2008||Magnachip Semiconductor Ltd.||System and method to enhance the uniformity of intensity distribution on digital imaging sensors|
|US7564629||Jul 21, 2009||Crosstek Capital, LLC||Microlens alignment procedures in CMOS image sensor design|
|US7612318 *||Oct 1, 2004||Nov 3, 2009||Dongbu Electronics Co., Ltd.||Complementary metal oxide semiconductor image sensor having cross talk prevention and method for fabricating the same|
|US7763918 *||Jul 27, 2010||Chen Feng||Image pixel design to enhance the uniformity of intensity distribution on digital image sensors|
|US8068284||Jun 22, 2009||Nov 29, 2011||Intellectual Ventures Ii Llc||Microlens alignment procedures in CMOS image sensor design|
|US8119965||Jan 23, 2007||Feb 21, 2012||Kyocera Corporation||Image sensor having two light receiving elements and camera module having the image sensor|
|US8350952 *||Jun 4, 2008||Jan 8, 2013||Omnivision Technologies, Inc.||Image sensors with improved angle response|
|US9029749 *||Mar 4, 2011||May 12, 2015||Kabushiki Kaisha Toshiba||Solid-state imaging device|
|US20050263676 *||Oct 1, 2004||Dec 1, 2005||Dongbu Electgronics Co., Ltd.||Complementary metal oxide semiconductor image sensor and method for fabricating the same|
|US20070045518 *||Nov 1, 2006||Mar 1, 2007||Sony Corporation||Solid-state image pickup device and image pickup camera|
|US20070181923 *||Feb 2, 2007||Aug 9, 2007||Nagataka Tanaka||Solid-state image sensor comprising plural lenses|
|US20090008532 *||Jan 23, 2007||Jan 8, 2009||Image Sensor And Camera Module||Image Sensor and Camera Module|
|US20090303377 *||Jun 4, 2008||Dec 10, 2009||Meisenzahl Eric J||Image sensors with improved angle response|
|US20100146477 *||Jun 22, 2009||Jun 10, 2010||Crosstek Capital, LLC||Microlens alignment procedures in cmos image sensor design|
|US20110215223 *||Sep 8, 2011||Unagami Naoko||Solid-state imaging device|
|U.S. Classification||257/233, 257/222, 257/E27.152, 257/E27.156|
|Cooperative Classification||H01L27/14623, H01L27/14621, H01L27/14843, H01L27/1463, H01L27/14812, H01L27/14627|
|European Classification||H01L27/146A10M, H01L27/148C4|
|May 24, 2004||AS||Assignment|
Owner name: FUJI PHOTO FILM CO., LTD., JAPAN
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:TAKEUCHI, YUTAKA;SATO, MASAKO;NAKAMURA, MARIKO;REEL/FRAME:015379/0867
Effective date: 20040402
|Mar 5, 2007||AS||Assignment|
Owner name: FUJIFILM HOLDINGS CORPORATION, JAPAN
Free format text: CHANGE OF NAME;ASSIGNOR:FUJI PHOTO FILM CO., LTD.;REEL/FRAME:018951/0599
Effective date: 20061001
Owner name: FUJIFILM CORPORATION, JAPAN
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:FUJIFILM HOLDINGS CORPORATION;REEL/FRAME:018951/0733
Effective date: 20070219
|Nov 6, 2008||FPAY||Fee payment|
Year of fee payment: 4
|Jan 21, 2013||REMI||Maintenance fee reminder mailed|
|Jun 7, 2013||LAPS||Lapse for failure to pay maintenance fees|
|Jul 30, 2013||FP||Expired due to failure to pay maintenance fee|
Effective date: 20130607