|Publication number||US6928878 B1|
|Application number||US 10/952,310|
|Publication date||Aug 16, 2005|
|Filing date||Sep 28, 2004|
|Priority date||Sep 28, 2004|
|Also published as||EP1640697A1, US7404247, US20060076855|
|Publication number||10952310, 952310, US 6928878 B1, US 6928878B1, US-B1-6928878, US6928878 B1, US6928878B1|
|Inventors||Odd Harald Steen Eriksen, Shuwen Guo|
|Original Assignee||Rosemount Aerospace Inc.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (11), Non-Patent Citations (9), Referenced by (42), Classifications (16), Legal Events (3)|
|External Links: USPTO, USPTO Assignment, Espacenet|
The present invention is directed to a pressure sensor, and more particularly, to a heat resistant pressure sensor.
Pressure sensors are widely used to sense the pressure of various fluids. Many existing pressure sensors utilize a flexible diaphragm having a piezoresistor located thereon such that flexure of the diaphragm causes a change in the resistance of the piezoresistor. However, many piezoresistive materials are unable to withstand high temperatures. The limited temperature range of such piezoresistive materials limits the environments in which the pressure sensor can be used and also limits the processing or manufacturing steps (i.e. when manufacturing the sensor) which may take place after the piezoresistive materials are deposited. Accordingly, there is a need for a pressure sensor utilizing improved, heat resistant sensing materials.
In one embodiment, the present invention is a pressure sensor utilizing heat resistant sensing materials. In particular, the pressure sensor utilizes two piezoelectric materials, one of which is doped to form an electron donor material, to create an electrically conductive electron gas at the interface of the piezoelectric material and the electron donor material. The materials selected for the electron donor material and piezoelectric material are preferably heat resistant to provide a heat resistant pressure sensor.
In one embodiment the invention is a pressure sensor including a movable component that is configured to move when the pressure sensor is exposed to differential pressure thereacross, and a pressure sensing component located on the movable component. The pressure sensing component includes an electrically conductive electron gas which changes its electrical resistance thereacross upon movement of the movable component. The pressure sensor is configured such that leads can be coupled to the pressure sensing component and the pressure sensing component can output a signal via the leads, the signal being related to a pressure to which the pressure sensor is exposed.
Other objects and advantages of the present invention will be apparent from the following description and the accompanying drawings.
As shown in
The diaphragm 16 is relatively thin and flexible such that the diaphragm 16 can flex upwardly or downwardly from its position shown in
The pressure sensor 10 includes at least one pressure sensing component 20 located on the diaphragm 16 (with
In the embodiment shown in
The layer of piezoelectric material 22 is a standard piezoelectric material in which an electric polarity is induced when the material is stressed. The piezoelectric material 22 is preferably gallium nitride (GaN), although as will be described in greater detail below, the piezoelectric material 22 could be made of a variety of other materials including but not limited to GaAs, InGaAs, or InP. In a preferred embodiment the piezoelectric material 22 has a thickness greater than about 0.5 microns, and in a more preferred embodiment has a thickness greater than about 1 micron, and in a most preferred embodiment has a thickness between about 0.5 microns and about 10 microns.
The electron donor material 24 is a layer of material having free electrons; that is, a material having electrons in addition to the normal valence electrons of the material. The electron donor material 24 is preferably a piezoelectric material that is doped to provide additional free electrons, although the electron donor material 24 need not necessarily be doped. The electron donor material 24 is preferably aluminum gallium nitride (AlGaN), although as will be described below, the electron donor material 24 could be made of a variety of materials, including but not limited to AlGaAs or InAlAs. In a preferred embodiment the electron donor material 24 has a thickness between about 200 Angstroms and about 500 Angstroms.
In the embodiment illustrated in
Due to the inherent nature of the piezoelectric layer 22 and the electron donor material 24, those materials 22, 24 establish a two dimensional electron gas (“2DEG”) at their interface 26. In particular, both the piezoelectric layer 22 and the electron donor material 24 have the same lattice structure (i.e. a hexagonal lattice structure when the piezoelectric material 22 is gallium nitride and the electron donor material 24 is aluminum gallium nitride). The lattice structures of the piezoelectric layer 22 and the electron donor material 24 are of the same basic (hexagonal) shape, but of different lattice sizes. Thus, at the interface 26 of the piezoelectric layer 22 and the electron donor layer 24, the lattice structures of the electron donor layer 24 adjusts (i.e. either stretches or compresses) to match the lattice structure of the piezoelectric layer 22. This adjustment in lattice structure at the interface 26 causes the lattice structure of the electron donor layer 26 to be adjusted through its entire thickness. When in this condition, the electron donor layer 24 is in a pseudomorphic state wherein the lattice structure of the entire electron donor layer 24 is adjusted or forced to move beyond its normal state. The electron donor material 24 should have a relatively small thickness (i.e. less than about 500 Angstroms) so that the electron donor layer 24 is placed in its strained pseudomorphic condition throughout its entire thickness when deposited on the piezoelectric material 22.
When the lattice structure of the electron donor layer 24 is in its pseudomorphic state, the lattice structure of the electron donor layer 24 is strained. As is well known, when a piezoelectric material (such as the electron donor material 24) is strained, each individual lattice unit cell in the piezoelectric material creates a dipole moment such that a polarization field across the material 24 as a whole is created. Thus, the permanent strain in the electron donor layer 24 creates a permanent polarization field which drives the free electrons of the electron donor layer 24 to the interface 26. In other words, the electron donor material, 24, by virtue of its piezoelectrically induced charge density and its free electrons, provides electrons to the interface 26.
In this manner the piezoelectric material 22 and electron donor material 24 cooperate to generate the electron gas at the interface 26. The electron gas is essentially a thin (i.e. less than about 50 Angstroms) layer of electrons that migrate to the interface 26. This electron gas is electrically conductive, and is a layer of free flowing electrons that are not bound to any particular nucleus but are retained at or around the interface 26 by electrical forces.
A pair of electrically conductive (i.e., metal) contacts 28 are located at either side or end of each pressure sensing component 20 and are electrically coupled to the electron gas at the interface 26. Each of the contacts 28 can be coupled to a controller, processor, computer, CPU or the like (together, a “processor,” not shown) by wires, leads or the like such that the processor can apply a potential across each pressure sensing component 20 to thereby cause a current to flow in each pressure sensing component 20. When a voltage is applied across each pressure sensing component 20, a current flows thereacross by virtue of the electron gas present at the interface 26.
In operation, the pressure sensor 10 is immersed in a fluid whose pressure is to be sensed such that the fluid to be sensed is located on the top side A of the pressure sensor 10. The pressure in the cavity 18 may be set at a predetermined level to provide a reference pressure (or a vacuum) by sealing the port 21 (by means not shown) to maintain the reference pressure in the cavity 18. Alternately, if a differential pressure is desired to be measured between fluids on the top and bottom sides, A and B respectively, of the sensor 10, a first fluid is introduced onto the top side A of the sensor 10 and a second fluid is introduced into the side B and into the cavity 18 via the port 21.
Differential pressure across the diaphragm 16 causes the diaphragm 16 to flex upwardly or downwardly. The flexure of the diaphragm 16 strains the pressure sensing components 20 which alters the strain in the electron donor material 24 and modulates the number of electrons donated to the electron gas by the electron donor material 24. For example, when the diaphragm 16 is moved in a first direction such that a strain sensing component 20 is compressed, such compression varies the electron mobility (i.e. the number of available free electrons and their ability to carry a current) of the electron gas. The change in electron mobility in turn varies the conductivity of the electron gas. In contrast, movement of the diaphragm 16 in an opposite direction places the pressure sensing component 20 in tension and varies the conductivity of the electron gas in an opposite manner to that caused by compression. Thus, an applied strain changes the band structure of the electron donor layer 24 and the sheet concentration of the electron gas, therefore modifying its conductivity/resistance.
The change in current flow across the pressure sensing component 20 is proportional to the deflection of the diaphragm 16. Thus, the deflection of the diaphragm 16 can be measured by detecting the current flow across the pressure sensing components 20 for a given voltage or electrical potential when the diaphragm 16 is not deflected, detecting the current flow across the pressure sensing component 20 for the given voltage when the diaphragm 16 is deflected, and comparing the two measured current flows. The processor can then determine the deflection of the diaphragm 16 and calculate the measured pressure by formulas and/or lookup tables and the like.
The electrical potential applied across the length of the pressure sensing component 20 causes the electrons donated by the electron donor material 24 to migrate lengthwise along the interface 26. In this sense, each pressure sensing component 20 could be considered to be a high electron mobility transistor (“HEMT”) providing a current flow analogous to the current in a metal oxide semiconductor field effect transistor (“MOSFET”). The piezoelectric material 22 and electron donor material 24 are analogous to a MOSFET gate electrode applied at the center of the field of electrons to modulate the current flow across the pressure sensing components 20. Thus, the pressure sensing components 20 are strain gages that operate as high electron mobility transistors, and the electron flow thereacross is modulated by a change in the electron density at the interface 26.
As shown in
When the diaphragm 16 is deflected the resistance of the two inner sensing components 20 b, 20 c increases or decreases, and the resistance of the two outer sensing components 20 a, 20 d increases or decreases in an opposite manner than the charge of the inner sensing components 20 b, 20 c (illustrated in one scenario by the arrows of
Rather than having the linear shape shown in
The piezoelectric material 22 and electron donor material 24 should be relatively robust, i.e., sufficiently robust that the diaphragm 16 can flex to a degree that causes significant stress in the pressure sensing components 20 without causing the pressure sensing component 20 to crack. For example, the pressure sensing structure 10 should be able to accommodate a pressure which generates a stress in pressure sensing components 20 of at least about 10 kPa, or further preferably at least about 100 kPa, or most preferably at least about 100 Mpa without causing cracking in the piezoelectric material 22 and/or electron donor material 24. The piezoelectric material 22 and electron donor material 24 should be free of cracks in normal operation. The piezoelectric material 22 and electron donor material 24 (and the pressure sensing component as a whole 20) preferably have a resistivity, in an unstressed condition, of less than about 30 ohm-centimeters, although this resistivity may be varied if desired.
As shown in
In the preferred embodiment, the piezoelectric material 22 is gallium nitride (GaN) and the electron donor material 24 is N-doped aluminum gallium nitride (AlGaN). However, besides GaN/AlGaN, various combinations of materials for the piezoelectric material 22 and electron donor material 24 may be utilized, for example: GaAs as a piezoelectric material 22 in combination with AlGaAs as an electron donor material 24; InGaAs as a piezoelectric material 22 in combination with InAlAs as an electron donor material 24; and InP as a piezoelectric material 22 in combination with InAlAs as an electron donor material 24. However, due to various performance advantages discussed below GaN/AlGaN are preferred materials for the piezoelectric material 22 and electron donor material 24. Thus it is noted that for discussion purposes the piezoelectric material 22 and electron donor material 24 may be referred to herein as the “gallium nitride layer 22,” and “aluminum gallium nitride layer 24,” respectively. However, this convention is included for ease of discussion purposes only and is not intended to convey that the layers 22, 24 are limited to those particular materials.
Gallium nitride theoretically retains its piezoelectric properties to well over 900° C. Above temperatures of 900° C., the gallium nitride begins to sublime and lose nitrogen, thereby decomposing and ceasing to function as a piezoelectric material. Aluminum gallium nitride is stable to even higher temperatures (about 1,100° C.). Thus, the use of gallium nitride as the piezoelectric material 22 and aluminum gallium nitride as the electron donor material 24 provides a pressure sensing component 20 having a relatively high operating temperature of at least about 900° C.
A limiting factor in the operating range of the pressure sensor 10 may lie in the materials of the contacts 28. In order to ensure that the pressure sensor 10, as a whole, can withstand high temperatures, the contacts 28 should be made of materials which are stable at high temperatures. Thus, the contacts 28 may be made of titanium, nickel, platinum or gold, all of which are stable at temperatures up to about 400° C. or as high as about 600° C. However the contacts 28 may be made of any metal or series of metals having a sufficiently large enough work function to establish good ohmic contact (i.e. the voltage/current relationship of the contacts 28 should preferably be linear in the range of as high as positive ten volts to as low as negative ten volts, or further preferably over a range of +/−20 volts, or most preferably over range of +/−100 volts depending on operating conditions). Under the current state of knowledge of materials used as contacts 28, thermodynamic and chemical interactions of the contact materials at temperatures above 600° C. may restrict the use of the sensor 10 at temperatures higher than 600° C. Thus, the pressure sensing component 20 and pressure sensor 10 as a whole should be able to withstand temperatures of at least about 400° C., or as high as about 600° C.
In order to manufacture the pressure sensor 10 of
The upper substrate portion 12 a is preferably made of (111) silicon. Silicon having an (111) orientation is preferred because such (111) silicon has a hexagonal lattice or crystalline structure that matches gallium nitride having a hexagonal lattice structure (also known as a wurtzite lattice structure) and encourages gallium nitride to adhere thereto and epitaxially grow thereon. In contrast, (100) silicon has a cubic lattice structure and therefore gallium nitride having a hexgonal lattice structure cannot be easily grown on (100) silicon.
The upper substrate portion 12 a may have an etch stop layer 23 located therein which divides the upper substrate portion 12 a into an upper layer or device layer 25 and a lower layer 27. The etch stop layer 23 can include or be made from a variety of materials, including silicon dioxide. Thus the upper substrate portion 12 a may be a semiconductor-on-insulator wafer, and more particularly, a silicon-on-insulator wafer which can be acquired from commercial wafer manufacturers.
Alternately, the upper substrate portion 12 a can be made of a single monolithic or bulk material which lacks the etch stop layer 23. Further alternately, the upper layer 25 may be made of a different material than the lower layer 27. In this case the upper layer 25 and a lower layer 27 are formed separately but directly bonded together. For example, the lower layer 27 may be made of (100) silicon and the upper layer 25 may be made of (111) silicon. When the upper substrate portion 12 a is constructed in this manner the etch stop layer 23 may be omitted, as the junction between the two different types of silicon may provide an effective etch stop, particularly for anisotropic etching. However, if desired one or more of the upper 25 or lower 27 layers may include an etch stop layer, such as silicon dioxide, located thereon before the upper 25 and lower 27 layers are joined together to provide the buried oxide layer 23 to the upper substrate portion 12 a.
The gallium nitride 22 is then desired to be deposited onto the upper substrate portion 12 a. However, due to differing coefficients of thermal expansion and the difference in lattice constant (distance between adjacent atoms) between silicon and gallium nitride, it may be difficult to directly deposit gallium nitride 22 onto the silicon substrate 12. Thus, a transition layer 36 may be located between the silicon substrate 12 and the gallium nitride 22 layer to allow the gallium nitride 22 to be stably and securely adhered to the substrate 12, and to avoid cracking of the gallium nitride 22 layer after the deposition process.
The transition layer 36 can be nearly any material which allows the gallium nitride 22 (or other material used in place of the gallium nitride 22) to adhere to the substrate 12 and grow epitaxially thereon in a relatively low stress state. For example, the transition layer 36 may be a compositionally-graded layer which has a composition which varies across its thickness to provide strain relief to limit or to prevent formation of cracks in the gallium nitride layer 22. The transition layer 36 may be compositionally graded such that gallium nitride, gallium, or alloys of gallium nitride increase in concentration along the transition layer 36 toward the side of the transition layer 36 which faces the gallium nitride layer 22 (i.e., in the upward direction in
If desired, instead of or in addition to the compositionally-graded transition layer described above, a layer of silicon carbide can be located between the substrate 12 and the gallium nitride 22. The silicon carbide layer acts as an epitaxial template (i.e. a material having a lattice structure that encourages epitaxial growth thereon) and as a transition layer by reducing lattice mismatch between the gallium nitride 22 and the substrate 12. This silicon carbide layer may be bonded to the substrate 12 or grown as a conversion layer. In addition to the compositionally graded layer and silicon carbide discussed above, the transition layer 36 may be a mixture of nitrides and amorphous films, or various other appropriate materials.
The transition layer 36 is deposited on the upper substrate portion 12 a, such as by metal-organic chemical vapor deposition (“MOCVD”), molecular beam epitaxy (“MBE”), plasma enhanced molecular beam epitaxy (“PEMBE”), vapor phase epitaxy, pulsed laser physical vapor deposition, or any other deposition technique known to those skilled in the art. The piezoelectric material 22 and electron donor material 24 are then deposited on the transition layer 36, such as by MOCVD, MBE, PEMBE, vapor phase epitaxy, pulsed laser physical vapor deposition, or any other suitable deposition technique known to those skilled in the art.
The transition layer 36, piezoelectric material 22 and electron donor material 24 are then patterned into the shapes shown in
Next, the passivation layer 30 is deposited over the entire upper surface of the upper substrate portion 12 a and the electron donor material 24. After depositing the passivation layer 30, openings 29 are created in the passivation layer 30 (
As shown in
The cavity 18 should be formed in the upper substrate portion 12 a after deposition of the gallium nitride and/or aluminum gallium nitride. In particular, if the cavity 18 were to be formed in the upper substrate portion 12 a prior to deposition of the gallium nitride/piezoelectric material 22 and/or the aluminum gallium nitride/electron donor material 24, during the deposition process the upper substrate portion 12 a will heat unevenly across its upper surface due to its non-uniform cross section or thickness. The uneven heating can lead to uneven deposition, poor thickness controls, and poor stoichiometry controls of the deposited gallium nitride 22 and/or the aluminum gallium nitride 24. Such poor stoichiometric controls may in turn lead to cracking of the gallium nitride layer 22 and/or aluminum gallium nitride 24 and degraded electronic properties of the sensing components 20. In contrast, if the cavity 18 is not present during deposition of the gallium nitride 22, aluminum gallium nitride 24 and/or other materials, the upper substrate portion 12 a has a uniform cross section to eliminate the cause of uneven heating.
After the cavity 18 is formed in the upper substrate portion 12 a, the lower substrate portion 12 b is provided. It is preferred to make the lower substrate portion 12 b of (100) silicon (rather than, for example (111) silicon) because (100) silicon may be more readily available, cheaper and easier to process. For example, (100) silicon can be either anisotropically etched or reactively ion etched, whereas (111) silicon must be etched by reactive ion etching. However, if desired, both the upper substrate portion 12 a and lower substrate portion 12 b may be made of (111) silicon.
The upper and lower substrate portions 12 a, 12 b are then coupled together utilizing conventional wafer bonding methods, such as silicon direct fusion bonding, oxide bonding, metal bonding, or other bonding methods well known in the art. At this time the fabrication of the sensor 10 shown in
As shown in
Having described the invention in detail and by reference to the preferred embodiments, it will be apparent that modifications and variations thereof are possible without departing from the scope of the invention.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US4730496||Jun 23, 1986||Mar 15, 1988||Rosemount Inc.||Capacitance pressure sensor|
|US4777826||Mar 10, 1987||Oct 18, 1988||Rosemount Inc.||Twin film strain gauge system|
|US4799088 *||Jul 27, 1981||Jan 17, 1989||Fujitsu Limited||High electron mobility single heterojunction semiconductor devices and methods for production thereof|
|US4922310 *||Oct 1, 1986||May 1, 1990||Telefunken Electronic Gmbh||Field-effect transistor|
|US5365078 *||Oct 4, 1993||Nov 15, 1994||Mitsubishi Denki Kabushiki Kaisha||Semiconductor device and method of making it|
|US5515732||Jun 6, 1995||May 14, 1996||Rosemount Inc.||Capacitive pressure sensor and reference with stress isolating pedestal|
|US5677553||Dec 19, 1994||Oct 14, 1997||Mitsubishi Denki Kabushiki Kaisha||Semiconductor device strucutre having a two-dimensional electron gas and contact thereto|
|US6611002||Feb 23, 2001||Aug 26, 2003||Nitronex Corporation||Gallium nitride material devices and methods including backside vias|
|US6617060||Jul 2, 2002||Sep 9, 2003||Nitronex Corporation||Gallium nitride materials and methods|
|US6649287||Dec 14, 2000||Nov 18, 2003||Nitronex Corporation||Gallium nitride materials and methods|
|US20030119220||Oct 29, 2002||Jun 26, 2003||Boston Microsystems, Inc.||Micromechanical piezoelectric device|
|1||Akasaki, I., "The Evolution of Nitride Semiconductors," Materials Research Society Symp. Proc., vol. 482, pp. 3-14 (1998).|
|2||Bykhovski, A. D. et al., "Piezoresistive effect in wurtzite n-type GaN," Applied Physics Letters, vol. 68, No. 6, pp. 818-819 (Feb. 5, 1996).|
|3||Eickhoff, M. et al., "Novel Sensor Applications of group-III nitrides," Materials Research Society Symp. Proc., vol. 693, pp. 781-792 (2002).|
|4||Gaska, R. et al., "Piezoresistive effect in GaN-AIN-GaN structures," Applied Physics Letters, (1997).|
|5||Gaska, R. et al., "Piezoresistive effect in metal-semiconductor-metal structures on p-type GaN," Applied Physics Letters, vol. 76, No. 26, pp. 3956-3958 (Jun. 26, 2000).|
|6||Gaska, R. et al., "The influence of the deformation on the two-dimensional electron gas density in GaN-AlGaN heterostructures," Applied Physics Letters, vol. 72, No. 1, pp. 64-66 (Jan. 5, 1998).|
|7||Hickman, R. et al., "Uniformity and High Temperature Performance of X-Band Nitride Power HEMTs Fabricated from 2-inch Epitaxy," Solid State Electronics, vol. 42, Issue 12, pp. 2183-2185 (Dec. 1998).|
|8||Statement by Applicant with Attachment A.|
|9||Vescan, A. et al., "MBE grown AIGaN/GaN MODFETs with high breakdown voltage," International MBE Conference (1998); Journal of Crystal Growth (1999).|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US7181972 *||Dec 27, 2004||Feb 27, 2007||General Electric Company||Static and dynamic pressure sensor|
|US7313965 *||Aug 25, 2006||Jan 1, 2008||General Electric Company||High-temperature pressure sensor|
|US7400042||May 3, 2005||Jul 15, 2008||Rosemount Aerospace Inc.||Substrate with adhesive bonding metallization with diffusion barrier|
|US7538401||Sep 19, 2006||May 26, 2009||Rosemount Aerospace Inc.||Transducer for use in harsh environments|
|US7571650 *||Jul 30, 2007||Aug 11, 2009||Hewlett-Packard Development Company, L.P.||Piezo resistive pressure sensor|
|US7628309||May 3, 2005||Dec 8, 2009||Rosemount Aerospace Inc.||Transient liquid phase eutectic bonding|
|US7642115||Apr 20, 2009||Jan 5, 2010||Rosemount Aerospace Inc.||Method for making a transducer|
|US7665305||Feb 23, 2010||Delavan Inc||Valve assembly for modulating fuel flow to a gas turbine engine|
|US7723720 *||Nov 9, 2005||May 25, 2010||University Of Florida Research Foundation, Inc.||Methods and articles incorporating local stress for performance improvement of strained semiconductor devices|
|US7775052||Nov 17, 2006||Aug 17, 2010||Delavan Inc||Active combustion control system for gas turbine engines|
|US7952154||May 31, 2011||Rosemount Aerospace Inc.||High temperature resistant solid state pressure sensor|
|US8013405||Nov 20, 2009||Sep 6, 2011||Rosemount Aerospsace Inc.||Transducer with fluidly isolated connection|
|US8162287||Apr 24, 2012||Delavan Inc||Valve assembly for modulating fuel flow to a gas turbine engine|
|US8200410||Jun 12, 2012||Delavan Inc||Active pattern factor control for gas turbine engines|
|US8239114||Aug 7, 2012||Delavan Inc||Methods and systems for modulating fuel flow for gas turbine engines|
|US8417434||Apr 9, 2013||Delavan Inc||Active pattern factor control for gas turbine engines|
|US8434310||Dec 3, 2009||May 7, 2013||Delavan Inc||Trim valves for modulating fluid flow|
|US8460961||Jun 11, 2013||Rosemount Aerospace Inc.||Method for forming a transducer|
|US8483931||May 22, 2012||Jul 9, 2013||Delavan Inc.||Active pattern factor control for gas turbine engines|
|US8546817||Nov 30, 2011||Oct 1, 2013||Honeywell International Inc.||High temperature strain sensor|
|US8567255 *||May 17, 2011||Oct 29, 2013||Alps Electric Co., Ltd.||Semiconductor pressure sensor having a recess with a larger area than a planar shape of a diaphragm|
|US20060137456 *||Dec 27, 2004||Jun 29, 2006||Samhita Dasgupta||Static and dynamic pressure sensor|
|US20060249847 *||May 3, 2005||Nov 9, 2006||Rosemount Aerospace Inc.||Substrate with bonding metallization|
|US20060283255 *||Aug 25, 2006||Dec 21, 2006||General Electric Company||High-temperature pressure sensor|
|US20070013014 *||Sep 19, 2006||Jan 18, 2007||Shuwen Guo||High temperature resistant solid state pressure sensor|
|US20070119147 *||Nov 17, 2006||May 31, 2007||Cornwell Michael D||Active combustion control system for gas turbine engines|
|US20070120208 *||Nov 28, 2005||May 31, 2007||General Electric Company||Wide bandgap semiconductor based field effect transistors|
|US20090026398 *||Sep 22, 2008||Jan 29, 2009||Delavan Inc||Valve assembly for modulating fuel flow to a gas turbine engine|
|US20090031818 *||Jul 30, 2007||Feb 5, 2009||Hewlett-Packard Development Company Lp||Pressure sensor|
|US20090072371 *||Nov 9, 2005||Mar 19, 2009||University Of Florida Research Foundation, Inc.||Methods And Articles Incorporating Local Stress For Performance Improvement Of Strained Semiconductor Devices|
|US20090077945 *||Aug 21, 2008||Mar 26, 2009||Delavan Inc||Variable amplitude double binary valve system for active fuel control|
|US20090108382 *||Sep 19, 2006||Apr 30, 2009||Odd Harald Steen Eriksen||Transducer for use in harsh environments|
|US20090203163 *||Apr 20, 2009||Aug 13, 2009||Odd Harald Steen Eriksen||Method for making a transducer|
|US20090204306 *||Feb 10, 2009||Aug 13, 2009||Delavan Inc||Methods and systems for modulating fuel flow for gas turbine engines|
|US20090234555 *||Mar 12, 2008||Sep 17, 2009||Williams Brandon P||Active pattern factor control for gas turbine engines|
|US20100047491 *||Feb 25, 2010||Rosemount Aerospace Inc.||Transient liquid phase eutectic bonding|
|US20100065934 *||Mar 18, 2010||Odd Harald Steen Eriksen||Transducer|
|US20110131947 *||Dec 3, 2009||Jun 9, 2011||Delavan Inc.||Trim valves for modulating fluid flow|
|US20110214505 *||Sep 8, 2011||Daigo Aoki||Semiconductor pressure sensor|
|DE102009012914A1||Mar 12, 2009||Sep 17, 2009||Delavan Inc||Aktive Musterfaktorsteuerung/regelung für Gasturbinenmotoren|
|EP2477019A1 *||Jan 14, 2011||Jul 18, 2012||Honeywell International Inc.||Harsh environment pressure sensor|
|EP2597442A1 *||Nov 28, 2011||May 29, 2013||Honeywell Romania SRL||Pressure sensors and methods of sensing pressure|
|International Classification||G01L9/00, H01L41/113|
|Cooperative Classification||Y10T29/42, H01L41/1132, Y10T29/4908, G01L9/0055, Y10T29/49007, Y10T29/49, G01L9/008, G01L9/0042, Y10T29/49005, Y10S439/936|
|European Classification||G01L9/00D2B4, G01L9/00D10, G01L9/00D1|
|Sep 28, 2004||AS||Assignment|
Owner name: ROSEMOUNT AEROSPACE INC., MINNESOTA
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:ERIKSEN, ODD HARALD STEEN;GUO, SHUWEN;REEL/FRAME:015847/0456
Effective date: 20040927
|Feb 17, 2009||FPAY||Fee payment|
Year of fee payment: 4
|Feb 19, 2013||FPAY||Fee payment|
Year of fee payment: 8