|Publication number||US6953519 B2|
|Application number||US 10/651,526|
|Publication date||Oct 11, 2005|
|Filing date||Aug 29, 2003|
|Priority date||Aug 30, 2002|
|Also published as||US7337656, US20040074288, US20060011467, US20060011830, US20070278405|
|Publication number||10651526, 651526, US 6953519 B2, US 6953519B2, US-B2-6953519, US6953519 B2, US6953519B2|
|Inventors||Yoshiharu Shirakawabe, Hiroshi Takahashi, Tadashi Arai|
|Original Assignee||Sii Nanotechnology Inc.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (2), Referenced by (15), Classifications (36), Legal Events (4)|
|External Links: USPTO, USPTO Assignment, Espacenet|
1. Field of the Invention
The present invention relates to a scanning probe microscope according to the four-tip probe method which the microscope is to be used in, for example, semiconductor process evaluation, and also to a probe suitable for analyzing an ultra-surface region of a sample when used in the scanning probe microscope.
2. Description of Related Art
The invention of the transistor evolved from studies of the electrical characteristics of a semiconductor surface, particularly the surface electron state. However, with respect to electrical conduction due to the state of surface electrons themselves, many points have been left unanalyzed until today. This “surface state conduction” is extremely difficult to measure because electricity runs only in one or two electron layers of a crystal surface. However, thanks to the development of new measuring and inspecting techniques, such as a four-tip probe scanning tunnel microscope operating in an ultra-high vacuum and a microscopic four-tip probe, direct measurement of the surface state conduction has become possible and very interesting conduction characteristics have become revealed as a result. To this end, it has been determined that the electron state of a semiconductor surface has a unique characteristic totally different from that of the bulk state. In the electron device field, apparatuses of this type will play an important role in research and development of electron devices.
In an evaluating apparatus using a scanning tunnel microscope according to the four-tip probe method, four probe tips are arranged linearly at regular distances, a current is caused to flow into a sample from the outer two of the probe tips, and a voltage drop caused due to the electrical resistance of the sample is measured by the inner two of the probe tips. At such time, because there is only a very slight current flowing in these probe tips, only a voltage drop V on the sample can be measured without influence of the contact resistance at a point of contact of the probe tips with the sample. An electrical resistance according to the four-tip probe method is obtained by R=V/I where I is a measured current. As shown in
Conventionally, four-tip probes whose inter-tip distance is in the order of millimeters to centimeters have been used, and many studies on this type of probe were carried out. However, these conventional probes cannot be applied to surface analysis of semiconductor devices. Recently, an undergraduate research group of Tokyo University released a report (Applied Physics, 70th Volume, 10th Issue, 2001) on measurement of electrical resistance of a silicon crystal surfaces using a microscopic four-tip probe of a several
m pitch manufactured utilizing silicon micro-processing technology, such as ordinary lithography. For analyzing the outermost or uppermost device-surface, however, this several μm inter-tip distance is inadequate to achieve proper performance. An inter-tip distance of at most 1 μm or less is needed for doing so. Even if the above-mentioned silicon micro-processing technology is employed, it is difficult to manufacture a four-tip probe having an inter-tip distance of a such a sub-micron order.
In a further related art study, positioning of measuring points on an object surface is carried out using an optical microscope. However, because a required measuring region for analyzing the outermost or uppermost device-surface is extremely small, it is difficult to achieve positioning using the conventional optical microscope and, as an alternative means, a new observation technique, such as a scanning electron microscope (SEM) and an atomic force microscope (AFM) has been required. When an SEM is used, a sample is always irradiated with electrons during observation. This may produce noise and render accurate measurement of electricity impossible. On the other hand, in the case of an AFM, observation can be realized either in an ordinary atmospheric environment or a special atmospheric environment. However, when a multi-tip probe itself is used also as an image-obtaining probe, this may be a hindrance to accurate measurement for reasons such as (1) it is difficult to perform image analysis from signals detected by a plurality of probe tips arranged in a row and (2) the image is contaminated or otherwise damaged by scanning. Further, in the conventional AFM, it is a common practice to employ the light leverage method in which a mirror is mounted on a cantilever to detect displacement. In this case, a sample is irradiated with laser light. Because laser light serves as an excitation energy source to cause surface atoms to enter an excited state, this has a considerable effect on the movement of electrons on a device surface and therefore also impedes accurate measurement of electricity. Alternatively, waves serving as excitation light can be removed by wavelength cutoff using a filter. However, this alternative cannot realize observation in a perfect dark field and would often encounter problems, such as decreases in sensitivity due to attenuation of light intensity.
It is accordingly an object of the present invention to provide a a processing method to form a microscopic multi-tip probe whose inter-tip distance is on a sub-micron order, and to thereby provide such a microscopic multi-tip probe. Another object of the present invention is to provide an ultra-surface analyzing apparatus for analyzing the ultra-surface of a semiconductor device, the apparatus of having a function of positioning that does not influence electricity measurement in an extremely small region using the microscopic multi-tip probe.
The multi-tip probe manufacturing method of the present invention comprises the steps of making a cantilever using lithographic techniques and forming microscopic electrodes at a distal end of the cantilever by sputtering and gas-assisted etching processing using a focused charge particle beam.
This method of manufacturing a multi-tip probe of the present invention comprises the steps of, after making a cantilever using lithographic techniques, performing separation so as to form a plurality of lead portions using lithographic techniques on the cantilever and forming a shunt area at the distal end, and processing the shunt area of the distal end using a focused charged particle beam using sputtering or gas-assisted etching, exposure to X-rays using a stopper, mask aligner, and Synchrotron Orbital Radiation (SOR), or by electron beam rendering and etching so as to form microscopic electrodes.
Further, the method of manufacturing a multi-tip probe of the present invention comprises the steps of, after making a cantilever using lithographic techniques, performing separation so as to form a plurality of lead portions using lithographic techniques on the cantilever, and blasting the distal end of the cantilever with a source gas and irradiating with a focused charged particle beam so as to form microscopic electrodes.
In order to provide the surface characteristic analysis device of the present invention with functions where the microscopic multi-tip probes are put into a non-contact state and an observed image is obtained for a sample surface using an AFM function, a measurement region is specified from the observed image, and the multi-tip probes are positioned at the specified regions and contact is made, drive means are provided for positioning probe positions of a cantilever having a microscopic multi-tip probe of a pitch of 1□m or less at a distal end and a cantilever for AFM use having a dedicated probe at a distal end with a known prescribed gap there between and driving the probes independently so as to be in contact/non-contact states with respect to the sample surface.
One of a bi-metal actuator, a comb-shaped electrostatic actuator, or a piezoelectric microactuator is adopted as the mesas for driving in a contact/non-contact state.
A self-detecting method where a strain gauge is installed at the cantilever is adopted to enable measurement in a dark field state.
A multi-tip probe of the present invention comprises a cantilever formed using lithographic techniques, a plurality of lead portions formed on the cantilever, and a plurality of electrodes connected to each of the lead portions so that the pitch between the electrodes is narrower than pitch between the lead portions.
The multi-tip probe of the present invention may have a configuration provided with a convex bank at the region where the electrode of the cantilever are formed or may be provided with probes at the electrodes.
In a scanning tunnel microscope according to the four-tip probe method to be used for semiconductor process evaluation, there is the correlation shown in
For example, according to one technique, a single micro cantilever is fabricated by coating a substrate of silicon with a conductive thin film or by implanting ions into a substrate to make the substrate conductive. The resulting micro cantilever has a multi-tip conductive portion whose tips are spaced one from another and a shunt area formed on a distal end portion of the cantilever into which area the tips of the conductive portion merge. In order to obtain a less than 1 μm tip pitch, comb-shaped electrodes that are separated from each other are formed in the shunt area of the distal end portion of the cantilever by an etching process, such as sputter etching or gas assist etching using, for example, a focused ion beam (FIB) apparatus. The comb-shaped electrodes are used as a multi-tip probe. According to another technique, a single cantilever having a multi-tip conductive portion whose tips are spaced one from another and a non-conductive area formed at a distal end portion of the cantilever is fabricated using photolithographic processes. Further, the above-described structure is obtained by depositing metal or carbon on the distal end portion of the cantilever, which is wired by a patch process, at desired distances by chemical vapor deposition (CVD) using an FIB apparatus. The microscopic multi-tip conductive portions may be formed by making the silicon, i.e. the cantilever, conductive using ion implantation techniques through irradiation with a beam rather than by CVD. It is possible to make processing time shorter by making lead portions that are not required in the microscopic processing as conductors for use with the multi-tip probe etc. in advance.
In another alternative, a needle-shaped electrode may be manufactured which is comprised of not only the comb-shaped electrode, but also by laminating or depositing a conductive substance (such as carbon or tungsten) on the distal end portion of the electrode. This electrode can make contact with a sample in an improved manner. In the manufacture of the electrode by processing the deposited metal using an FIB apparatus, an ultra-microscopic multi-tip probe whose inter-tip distance is several hundreds to several nm can be formed with ease, depending on the metal film thickness. In the foregoing description, an FIB is used as a source of a charged particle beam. Alternatively, however, the processing, which is gas assist etching or CVD, may be realized using an apparatus using an electron beam.
Further, for analyzing the outermost or uppermost surface of a device, it is essential to specify the position of the device surface. Conventionally, the positioning is carried out by obtaining an observed image of the device surface of a sample on an optical microscope. However, because a measuring region is extremely small, specifying the device surface position using an optical microscope is difficult to achieve, requiring, as an alternative means, a new observation technique, such as a high-resolution scanning electron microscope (SEM) or an atomic force microscope (AFM). When an SEM is used, electrons are irradiated to a sample always during observation as mentioned above. This would be a cause for noise so that accurate measurement of electricity cannot be performed. For this reason, this type of surface observation apparatus is inconvenient to use. When an observed image is obtained by an AFM, a laser to be used for measurement of displacement and serving as an excitation energy source would cause surface atoms to take on an excited state. In the present invention, as a solution to this problem, an AFM not using a laser, namely, a method of detecting displacement of a device surface using a cantilever with a strain gauge adhered thereto. As a solution to the above-mentioned problem that impedes accurate measurement for reasons, such as (1) it is difficult to perform image analysis from signals detected by a plurality of probe tips arranged in a row and (2) the image is contaminated or otherwise damaged by scanning, the present invention provides a single-tip probe dedicated to surface observation, in addition to a multi-tip probe dedicated to surface analysis, and also provides such a mechanism that, during scanning with the surface-observation-dedicated single-tip probe to obtain an observed image, a multi-tip probe serving as the surface-analysis dedicated probe assumes a non-contact state to prevent adhesion of contaminant or other damage, and it is possible for both probes to independently adopt contact or non-contact positions. As this mechanism, a cantilever may be moved upwards and downwards by a temperature-controlled bimetal-type actuator, a comb-shaped electrostatic actuator, or a piezoelectric micro-actuator.
One embodiment will now be described in which a four-tip probe is manufactured by a technique according to the present invention. Using a silicon substrate as a starting material, an elongated cantilever 1 of a 16 μm width, which is shown in
The basic construction of an FIB apparatus to be used in the present embodiment is shown in FIG. 11. The FIB apparatus focuses ions, which are derived from an ion source 71, into a focused ion beam by an ion optical system 73 and irradiates a sample surface 79 with the focused ion beam 72. As the position to be irradiated is controlled by a deflector 77, electrons or secondary ions are emitted from the irradiated sample surface 79 and then detected by a secondary charged particle detector 78. The detected secondary charged particles are dependent on the sample surface material of an FIM-irradiated beam spot. Therefore, when the irradiated position is scanned two-dimensionally, a microscopic image of the sample surface can be obtained by combining the position information and the detection information by a computer 76 and displaying the result of this combining on a display 75. This is the function of a scanning microscope according to an FIB apparatus. The process in which the material of a sample surface is etched by irradiating the sample surface with the FIB is a sputter etching function, and the process in which the material of a sample surface is etched as a chemical reaction is facilitated by irradiating the FIB to the sample surface while spraying an assist gas from a gas gun 74 is a gas assist etching function. Further, the process in which a material is deposited on a sample surface by irradiating with the FIB while spraying a raw material gas from a gas gun is a Chemical Vapor Deposition (CVD) function.
In the present invention, using an FIB apparatus equipped with these functions, a microscopic image of the distal end portion of the above-mentioned cantilever 1 is obtained. As a result, the microscopic image shown in
It is possible for the pattern-forming process of the shunt area 4 to be carried out using exposure to X-rays using a stopper, mask aligner, and SOR, or by electron beam rendering and etching.
Another embodiment will now be described in which a four-tip probe is manufactured by another deposition technique of the present invention using an FIB apparatus. Using a silicon substrate as a starting material, an elongated cantilever 1 of a 16 μm width, which is shown in
In the present embodiment, using an FIB apparatus, a microscopic image of the distal end portion of the above-mentioned cantilever 1 is obtained. As a result, the microscopic image shown in
Another embodiment, unlike the previously mentioned embodiment using only a comb-shaped electrode, will now be described in which, in order to improve the ease of contact with a sample, a needle-shaped electrode is formed by laminating and depositing a conductive substance (such as carbon or tungsten) on the distal end portion of each electrode by the CVD process using an FIB apparatus.
However, the needles 61 of the thus formed four microscopic electrodes 6 would tend to cause erroneous conduction as they cannot uniformly contact a sample due to their various heights, and would tend to cause different contact resistances due to various contact pressures. To avoid these problems, in the present embodiment, the resilient probe 62 is formed in a bow shape shown as electrode in
A still further embodiment will now be described in which, when an elongated cantilever 1 is fabricated by lithography, a convex bank 11 is formed on the distal end portion of the cantilever 1 and four-probe-tip lead paths 3 are patterned in platinum film on the resulting cantilever 1, thereby causing uniform contact pressure to be exerted on every probe tip.
An embodiment of a surface characteristic analysis apparatus according to the present invention will now he described in which the apparatus is equipped with a probe of an atomic force microscope (AFM) so as to have a function of positioning the measuring point on an object surface. As shown in
The operation of the apparatus according to the present embodiment will now be described. Firstly, the cantilevers assume a non-heated state, namely, the distal end portion of the AFM probe tip 9 are brought into contact with a sample surface and the distal end portions of the four microscopic probe tips 6 are brought away from the sample surface. In this state, the sample surface is scanned two-dimensionally to obtain a three-dimensional image of the sample surface. This operation is similar to that of the ordinary scanning probe microscope. The sample's position to be measured is selected and specified from the obtained three-dimensional image in such a manner that the distal end portions of the four probe tips 6 comes to a designated position. Because the distal end portions of the four microscopic probe tips 6 are spaced a predetermined distance from the distal end portion of the AFM probe tip 9, such drift has to be corrected on the coordinate. The sample stage is driven in X and Y directions in such a manner that the distal end portion of the AFM probe tip 9 comes to a position deviated from the specified measured position by the amount of the drift. As a result, the distal end portions of the four probe tips 6 come to the designated position. Subsequently, the pads 10, 10′ are heated as shown in
The micro cantilever manufacturing method according to one aspect of the present invention comprises the steps of fabricating a cantilever having a plurality of lead portions spaced one from another and a shunt area formed at a distal end portion of the cantilever by a micro cantilever fabrication technique utilizing lithography, and forming a probe on the cantilever by processing the shunt area of the distal end portion of the cantilever by sputtering or gas assist etching using a beam of focusing charged particles. According to another aspect of the present invention, the method comprises the steps of fabricating a cantilever having a plurality of lead portions spaced one from another, by a micro cantilever fabrication technique utilizing lithography, and forming a probe on the cantilever by CVD which irradiates a beam of focused charged particles to the distal end portion of the cantilever while spraying a gas of raw material thereto. Therefore, it is possible to easily obtain electrical information of microscopic portions and ultra-surface, which was impossible in the conventional art. In the method of manufacturing a microscopic multi-probe according to the present invention, because the probe tips are formed into a resilient structure by CVD, some variation in height of the probe tips are allowed, thereby increasing the easiness of the probe tip fabrication drastically.
The surface characteristic analyzing apparatus according one aspect of the present invention comprises first a micro cantilever having on its distal end portion a microscopic multi-tip probe, an AFM-dedicated micro cantilever having on its distal end portion a dedicated microscopic multi-tip probe; the AFM-dedicated micro cantilever being spaced by a known, predetermined distance from the first micro-cantilever, and means for driving the two micro cantilevers independently of each other into contact/non-contact states with respect to a sample. Therefore, the apparatus has the functions of obtaining an observed imaged of a sample surface by an AFM with the microscopic multi-tip probe in a non-contact state, determining a measuring region from the observed image, positioning the microscopic multi-tip probe in the determined measuring region and bringing the microscopic multi-tip probe into contact with the determined measuring region. Even in electricity measurement at an arbitrary position (e.g., a wiring portion) where positioning was difficult to take place on a conventional optical microscope, accurate measurement of electricity can be achieved by an array probe that can be combined with AFM. Further, the means for driving the cantilevers between a contact state and a non-contact state can be achieved with ease by employing a temperature-controlled bimetal-type actuator, a comb-shaped electrostatic actuator, or a piezoelectric micro-actuator. Furthermore, by using the self-detection method in which a strain gauge is mounted on the cantilever, electricity measurement in perfect dark field can be realized.
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|U.S. Classification||204/192.32, 204/192.34, 216/94, 427/526, 216/66, 427/523, 427/531, 427/595|
|International Classification||G01R3/00, G01R1/073, H01L21/66, G01Q60/32, G01Q70/06, G01Q10/04, G01Q20/04, G01Q60/38, G01Q60/16, G01Q60/24, G01Q60/10|
|Cooperative Classification||Y10T29/49007, B82Y35/00, B82Y15/00, G01R3/00, G01N23/00, G01Q70/16, G01N23/225, G01Q70/06, G01Q70/12|
|European Classification||B82Y15/00, G01N23/225, G01N23/00, B82Y35/00, G01R3/00, G01Q70/06, G01Q70/12, G01Q70/16|
|Aug 30, 2005||AS||Assignment|
Owner name: SII NANO TECHNOLOGY INC., JAPAN
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SHIRAWAWABE, YOSHIHARU;TAKAHASHI, HIROSHI;ARAI, TADASHI;REEL/FRAME:016930/0011
Effective date: 20050706
|Mar 20, 2009||FPAY||Fee payment|
Year of fee payment: 4
|Mar 6, 2013||FPAY||Fee payment|
Year of fee payment: 8
|Sep 25, 2014||AS||Assignment|
Owner name: HITACHI HIGH-TECH SCIENCE CORPORATION, JAPAN
Free format text: CHANGE OF NAME;ASSIGNOR:SII NANOTECHNOLOGY INC.;REEL/FRAME:033817/0078
Effective date: 20130101