|Publication number||US6967154 B2|
|Application number||US 10/229,338|
|Publication date||Nov 22, 2005|
|Filing date||Aug 26, 2002|
|Priority date||Aug 26, 2002|
|Also published as||US7279732, US7872291, US8362576, US8816447, US20040038525, US20040217410, US20080251828, US20110108929, US20130140646|
|Publication number||10229338, 229338, US 6967154 B2, US 6967154B2, US-B2-6967154, US6967154 B2, US6967154B2|
|Inventors||Shuang Meng, Garo J. Derderian, Gurtej Singh Sandhu|
|Original Assignee||Micron Technology, Inc.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (106), Non-Patent Citations (99), Referenced by (87), Classifications (40), Legal Events (4)|
|External Links: USPTO, USPTO Assignment, Espacenet|
The present application is generally related to U.S. application Ser. No. 10/137,058, titled ATOMIC LAYER DEPOSITION AND CONVERSION, filed May 2, 2002.
The present application is generally related to U.S. application Ser. No. 09/782,207, titled SEQUENTIAL PULSE DEPOSITION, filed Feb. 13, 2001.
All of the above listed applications are hereby incorporated by reference for any purpose.
The present invention relates to deposition techniques and, more particularly, to enhanced atomic layer deposition techniques for forming layers on wafers or substrates and to resulting structures and devices for performing the atomic layer techniques.
Integrated circuit devices continue to be reduced in size in order to create smaller devices that consume less power and operate faster. However, the reduction in size has increased the need for more precise layers that form the integrated circuits. More precise layers require excellent step coverage to prevent unwanted shorts between layers in an integrated circuit. That is, the stoichiometry of the layers must continue to be improved. Moreover, the purity of the layers becomes more important on the smaller scale integrated circuits as a single impurity may cause a layer to fail or short two adjacent layers.
As an example, modern integrated circuit design has advanced to the point where line width may be 0.25 microns or less. As a result, repeatability and uniformity of processes and their results is becoming increasingly important. Generally, it is desired to have thin films deposited on the wafer to save space. Yet reducing the thickness of films can result in pinholes and reduced mechanical strength, both of which may lead to shorts through the film.
Another development in the field of thin film technology for coating substrates is atomic layer deposition (ALD). A description of ALD is set forth in U.S. Pat. No. 5,879,459, which is herein incorporated by reference in its entirety. ALD operates by confining a wafer in a reaction chamber at a typical temperature of less than 300 degrees Celsius. Precursor gas is pulsed into the chamber, wherein the pulsed precursor forms a monolayer on the substrate by chemisorption. The low temperature limits the bonding of the precursor to chemisorption, thus only a single layer, usually only one atom or molecule thick, is grown on the wafer. Each pulse is separated by a purge pulse which completely purges all of the precursor gas from the chamber before the next pulse of precursor gas begins. Each injection of precursor gas provides a new single atomic layer on the previously deposited layers to form a layer of film. Obviously, this significantly increases the time it takes to deposit a layer having adequate thickness on the substrate.
These and other embodiments, aspects, advantages, and features of the present invention will be set forth in part in the description which follows, and in part will become apparent to those skilled in the art by reference to the following description of the invention and referenced drawings or by practice of the invention. The aspects, advantages, and features of the invention are realized and attained by means of the instrumentalities, procedures, and combinations particularly pointed out in the appended claims.
The present invention includes methods for forming a layer in an integrated circuit using enhanced atomic layer deposition as described herein and structures resulting from the methods. A method includes providing energy to disassociate components of a precursor gas to further enhance atomic layer deposition (“ALD”). In an embodiment, a plasma disassociates components of a precursor gas. In an embodiment, a thermal energy disassociates components of a precursor gas. The disassociated component reacts with another precursor gas to form an ALD layer in the integrated circuit.
In an embodiment, the present method includes purging a first gas and starting a plasma during the purging the first gas. In an embodiment, the method further includes flowing the first gas as a first precursor to the ALD reaction. A portion of the first gas remains adjacent the substrate. The method further includes flowing a second gas as a second precursor to the ALD reaction. The method further includes reacting the first and second gases according to ALD principles to form a layer on a substrate. In an embodiment, the plasma is maintained during a portion of the flowing of the second gas. In an embodiment, the plasma disassociates a component of the second gas. In an embodiment, the plasma is formed by applying about 300 Watts of RF power. The component reacts with the first gas to form the ALD layer. In an embodiment, the plasma ends prior to ending the flow of the second gas. In an embodiment, the process repeats the cycle of flowing a first gas, flowing a second gas, disassociating, and reacting to form multiple sub-layers. In an embodiment, the first precursor gas includes TaF5. In an embodiment, the second precursor gas includes NH3. In an embodiment the layer is TaN.
In an embodiment, the present method includes heating one of the reaction chamber and the substrate to a temperature of about 400 degrees Celsius. In an embodiment, the present method includes heating one of the reaction chamber and the substrate to a temperature above about 350 degrees Celsius. The precursor gases then sequentially flow into the chamber according to ALD principles and react at the substrate to form the layer of the present invention. The thermal energy disassociates a component of at least one of the precursor gases to enhance the ALD reaction. In an embodiment, a first precursor gas of TaF5 flows into the reaction chamber. A portion of the TaF5 gas remains at the surface of the substrate. In an embodiment, a second precursor gas including at least one of SiH4 and NH3 flows into the chamber. In an embodiment, a layer of TaN is formed.
In an embodiment, the ALD layer of the present invention is a metal layer. In an embodiment, the metal layer includes tantalum. In an embodiment, the ALD layer is TaN. The ALD layer is adapted to be used as a barrier layer in an integrated circuit device. Integrated circuit devices include memory cells, capacitors, and transistors. The integrated circuit devices are adapted to be used in memory devices, memory systems, computing systems and electronic devices. In an embodiment, the ALD layer of the present invention is in a substrate, wafer, or die. In an embodiment, the TaN layer has a ratio of Ta:N of about 1:1. In an embodiment, the TaN layer has a resistivity of about 2500 μOhms-cm. In an embodiment, the TaN layer has a resistivity of about 2000 μOhms-cm.
In the following detailed description of the invention, reference is made to the accompanying drawings which form a part hereof, and in which is shown, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. Other embodiments may be utilized and structural, logical, and electrical changes may be made without departing from the scope of the present invention. The terms wafer and substrate used in the following description include any structure having an exposed surface onto which a layer is deposited according to the present invention, for example to form the integrated circuit (IC) structure. The term substrate is understood to include semiconductor wafers. The term substrate is also used to refer to semiconductor structures during processing, and may include other layers that have been fabricated thereupon. Both wafer and substrate include doped and undoped semiconductors, epitaxial semiconductor layers supported by a base semiconductor or insulator, as well as other semiconductor structures well known to one skilled in the art. The term conductor is understood to include semiconductors, and the term insulator is defined to include any material that is less electrically conductive than the materials referred to as conductors. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims, along with the full scope of equivalents to which such claims are entitled.
According to the teachings of the present invention, fabrication of films on substrates, devices and systems for such fabrication, media containing instructions therefor, and integrated circuit devices produced according to the present invention are described.
In an example of process 100, a TaN film is formed. A purge gas evacuates the air from the reaction chamber that encloses at least one substrate. A first precursor gas, which includes tantalum (Ta), is pulsed into the reaction chamber for two seconds. In an embodiment, the first precursor gas includes TaF5. An amount of the Ta in the precursor gas adheres to the surface of the substrate according to ALD principles. An inert purge gas, e.g., argon, is pulsed into the chamber for four seconds to exhaust the first precursor gas except for the portion that adheres to the substrate surface. During the purge gas pulse, a plasma energy is delivered to the reaction chamber. The purge gas forms a plasma as it exhausts the precursor gas. The plasma energy is about 300 Watts. After the first precursor gas is purged, the second precursor gas, which includes nitrogen (N), is pulsed into the reaction chamber for two seconds. In an embodiment, the second precursor gas include NH3 The plasma energy continues to form a plasma out of the second precursor gas. The portion of the first precursor gas that is at the substrate surface reacts with the second precursor gas to form an ALD TaN layer on the substrate. The plasma energy is turned off. The second precursor pulse ends. If the TaN layer has the desired thickness, then the process ends. If the TaN layer does not have the desired thickness, then the process repeats.
The first precursor gas containing a first element to be deposited on the substrate now flows into the reaction chamber, 212. In an embodiment, the first element is conductive. In an embodiment, the conductive first element is a metal. In an embodiment, the metal includes, for example, tantalum. The metals can also include alloys that include tantalum. The metal, in an embodiment, is one element of a compound. The first precursor gas flow continues until a volume closely adjacent the surface of the substrate on which the first element will be deposited is saturated by the first precursor gas, 214. According to the teachings of the present invention, the first precursor gas saturates the topology of the substrate so that adequate precursor material is adjacent the substrate surface by the first precursor gas entering and/or coating the steps, trenches, and holes. The first precursor gas flow, as well as purge gas flow, if present, continues until the required saturation occurs depending on the processing conditions dictated by the type of substrate and precursor gas, and the topology of the substrate, 216. A substrate having numerous or high aspect steps may require a longer first precursor gas flow period than a substrate which has few steps or relative low aspect steps.
The first precursor gas flow ends once the first precursor gas saturates adjacent the substrate according to the processing conditions of the present deposition, 218. After the first precursor gas flow is stopped, energy to create a plasma in the reaction chamber begins, 219. The energy forms a plasma out of the gas remaining in the reaction chamber. In an embodiment, the purge gas begins forming the plasma. After the energy for forming the plasma is turned on, a second precursor gas flows in the reaction chamber, 220. The second precursor gas continues to flow into the reaction chamber until the second precursor gas saturates the volume adjacent the surface of the substrate on which the substance in the first precursor gas has been deposited, 222. The second precursor gas includes an element that will combine with the first precursor gas that remains adjacent the substrate surface. The plasma energy disassociates the elements of the second precursor. Accordingly, a disassociated element from the second precursor gas is free to form the desired ALD deposited layer with an element of the first precursor gas. The first precursor gas and the disassociated element of second precursor gas chemically react and deposit the desired compound in a ALD layer, e.g., monolayer, on the substrate. In an embodiment, the deposited monolayer is about one atomic layer thick. In an embodiment, the deposited ALD layer is less than one atomic layer thick. The monolayer and the ALD layer are an essentially pure layer of a single compound. In an embodiment, the disassociated element from the second precursor is N. In an embodiment, the layer formed by the present process is TaN.
The present process may continue the purge gas flow while the second precursor gas flows into the reaction chamber, 224. Once a sufficient quantity of second precursor gas is present to complete the reaction with the first precursor gas to deposit a layer on the substrate, the second precursor gas flow ends, 226. Purge gas flow may continue to at least partially flush the residual reaction and precursor gases and the by-product gas of the first and second precursors and reactant reaction from the reaction chamber.
At step 229, it is determined if the ALD layer formed by the previous steps has the desired layer thickness. If the layer now formed by one or a plurality of the ALD step iterations of the present invention has the desired thickness, then the ALD process proceeds to process end steps. If purge gas is still flowing, then the purge gas flow ends (231) usually after the remnants of the precursor, reactant, and by-product gases are purged from the chamber. The process of the present invention terminates at box 232. The reader should note that process termination comprises initiation of further processing and does not necessarily require shutdown of the reactor, e.g. the above sequence of steps can be repeated or additional fabrication steps are performed. While one embodiment of the invention includes all of the above steps, the present invention includes other embodiments which do not include all of the above steps.
If the layer now formed by the one or plurality of ALD step iterations does not have the desired thickness, then the process returns to step 210 or step 212 and begins another cycle. The process then completes the above sequence/process until step 229 determines that the converted layer has the desired thickness and thus the method proceeds to its end steps 231, 232.
An embodiment of the present inventive process is shown in FIG. 3. The process begins with flowing a pulse of the first precursor gas containing the first element into the reaction chamber. The first precursor gas flows into the chamber until a sufficient quantity of the element that will form the monolayer is adjacent the substrate as determined by stoichiometry and the particular reaction needed to deposit the desired film on the substrate. The first precursor gas must include a certain minimum amount of the first element to be deposited on a substrate and other reactive components that assist in the depositing the first element on the substrate. In an embodiment, the first element includes tantalum. The precursor gas may flow into the reactor in a quantity greater than determined by the stoichiometry of the reaction. The first precursor gas pulse is in the range of about one to two seconds. A pulse of purge gas now flows into the reaction chamber. The purge gas removes the first precursor gas from the reaction chamber except for a portion of the first precursor gas that remains at the substrate surface according to ALD principles. The purge gas is selected so that it is essentially inert with respect to both the first precursor gas and a second precursor gas. In an embodiment, the purge gas includes argon. The purge gas pulse is in the range of about one to four seconds. While the purge gas pulse is flowing into the reaction chamber, the energy required to form a plasma is turned on. Thus, the purge gas begins forming a plasma in the reaction chamber. A pulse of the second precursor gas flows into the chamber until a sufficient quantity of the second element that will form part of the desired layer on the substrate surface is adjacent the substrate surface. Thus, the second precursor gas is available to react with the first precursor at the surface of the substrate to deposit the desired film. In an embodiment, the second precursor gas pulse is about one to two seconds. The plasma energy continues to be applied to the gases in the reaction chamber during at least part of the pulse of the second precursor. Thus, the energy forms a plasma of the elements of the second precursor gas. The plasma energy disassociates the second element from the other components of the second precursor gas. The second element reacts with the first element to form a layer containing the first and second elements on the substrate surface. In an embodiment, the second element includes nitrogen. In an embodiment, the resulting layer is a metal nitride. In an embodiment, the layer is tantalum nitride. While the ALD reaction is nearing its conclusion, the plasma energy pulse ends. The second precursor gas pulse ends. A further purge gas pulse removes the remaining gases from the chamber and the substrate surface. The process is repeated until the layer formed according to the above steps has the desired thickness.
The amounts of the first precursor gas and the second precursor gas meets or exceeds the amount of material required by the stoichiometry of the particular reaction. That is, the amount of the first and second precursors in certain embodiments, provides excess mass in the reactor. The excess mass is provided to ensure an adequate reaction at the surface of the wafer. In this embodiment, the ratio of first precursor and the second precursor components in the gas phase is different than the stoichiometry of the film.
An example of a TaN layer formed according to plasma enhanced ALD was formed on a wafer. The plasma energy for this example was 300 Watts. The TaN layer has an average resistance of about 1300 μOhms-cm as determined by Creative Design Engineering's resistivity mapping system. In an embodiment, the average resistance is about 2,000 μOhms-cm. Further, a film deposited according to the present invention using TaF5 as a first precursor and NH3 as the second precursor results in less than 10% fluorine in the TaN layer. A film deposited according to the present invention using TaF5 as a first precursor and NH3 as the second precursor results in less than 5% fluorine in the TaN layer. In an embodiment, the fluorine contaminant in the TaN layer is less than about 10%. In an embodiment, the fluorine contaminant in the TaN layer is less than about 5%. Further, the ratio of Ta to N is about 1:1.
Another example of a layer that is formed according to the present invention is a tantalum nitride (TaN) layer formed on a copper layer. The TaN is formed according to the teachings herein on a copper layer in an integrated circuit structure. An example of a copper structure is a signal line. In an embodiment, the copper structure is a trench capacitor. The copper layer lines the capacitor and the TaN is formed directly adjacent the Cu layer. In an embodiment, the copper layer is a hemispherical grain (“HSG”) sidewall of an IC capacitor. The TaN layer provides excellent coverage of the HSG layer. The TaN reacts with the Cu layer to form copper tantalum nitride.
If the ALD deposited layer does not have the desired thickness, 425, then the process returns to the prior steps 417, 418, 421 to complete another ALD cycle. This will deposit another sub-layer on the previous layer until the ALD deposited layer/sub-layers have the desired thickness. The desired thickness is predetermined by the stoichiometry and purpose of the layer in the integrated circuit.
In an example of the process 400, a TaN film is fabricated. The TaN film is used as a conductive, barrier layer in a variety of IC devices. The substrate is prepared and positioned in a reaction chamber. The substrate is heated to a temperature of about 400 degrees Celsius. A first precursor gas of TaF5 flows into the chamber. In an embodiment, the TaF5 flows into the chamber for about one to three seconds. A portion of the TaF5 gas adheres to the substrate surface. The ambient portion of the first precursor gas that remains in the chamber is purged. A purge pulse of inert gas, e.g., argon, flows into the chamber for about three seconds. A second precursor gas of SiH4 and NH3 flows into the chamber. In an embodiment, the second precursor gas flows into the chamber for about four seconds. The TaF5 and SiH4/NH3 gases react at the substrate surface to form a TaN film at a rate of about 1.3 angstroms per cycle. The ALD reaction by-product gases are purged from the reaction chamber by a purge gas pulse. The purge gas pulse is another three second pulse of an inert gas, e.g., argon. The by-product gases of this example include SiF4 and SiHF3. The cycle is repeated until the TaN film has the predetermined thickness. The TaN film has a Ta:N ratio of about 1:1. That is, there is essentially no unreacted compounds, impurities or reaction byproducts in the TaN film. The addition of the heat to the reaction assists in disassociating the precursor gas compounds. The TaN film does not have significant amounts of Si or F as these two elements tend to strongly bond and not as strongly bond to Ta or N. That is, the silane effectively captures the fluorine released from the TaF5 gas. In an embodiment, Si impurities in the TaN film are less than 5%. In an embodiment, Si impurities in the TaN film are less than 3%. In an embodiment, Si impurities in the TaN film are in a range of about 2% to about 3%. It can be expected that Si is found in the TaN film in the quantity of one to two percent. This will not adversely effect the performance of the Ta N film in a significant way. The TaN film has a resistivity of about 2500 μohms-cm. In an embodiment, the TaN film has a resistivity in the range of 2250 μohms-cm to 2750 μohms-cm.
A bottom electrode 511 is formed overlying the trench 507 and insulating layer 509. Bottom electrode 511 is a conductive material. For one embodiment, bottom electrode 511 contains a metal. For another embodiment, the metal component of the bottom electrode 511 is a refractory metal. Bottom electrode 511, in an embodiment, contains more than one conductive layer, e.g., a first metal layer overlying a metal silicide layer. For additional embodiments, the conductive material of bottom electrode 511 contains a metal or conductive metal oxides, including platinum (Pt), titanium (Ti), ruthenium (Ru) or ruthenium oxide (RuOx). Bottom electrode 511 is formed by any of a plurality of methods, such as collimated sputtering, chemical vapor deposition (CVD) or other deposition techniques. Bottom electrode 511 forms the bottom conductive layer or electrode of the capacitor 502. For one embodiment, the bottom conductive layer has a closed bottom and sidewalls extending up from the closed bottom as shown in FIG. 5. For another embodiment, the bottom conductive layer has a substantially planar surface as in a parallel plate capacitor. In an embodiment, the bottom electrode 511 has a roughened or non-smooth surface. In an embodiment, the bottom electrode 511 has a hemispherical grain surface.
The bottom electrode 511, in an embodiment, is formed over a barrier layer that is on the conductive line. In an embodiment, the barrier layer include TaN. In an embodiment, the conductive line is a conductive polysilicon. Thus, this barrier layer is under the bottom electrode.
A first barrier layer 514 is formed overlying the bottom electrode 511 according to the teachings of the present invention. The first barrier layer 514 is shown to be directly adjoining the bottom electrode 511, but there is no prohibition to forming additional conductive layers interposed between the first barrier layer 514 and the bottom electrode 511 described above. The first barrier layer 514 is a conductive layer formed according to the enhanced ALD processes described herein. In an embodiment, the first barrier layer 514 includes a metal nitride material. In an embodiment, the first barrier layer 514 includes a refractory metal nitride material. The refractory metals of chromium (Cr), cobalt (Co), hafnium (Hf), molybdenum (Mo), niobium (Nb), tantalum (Ta), titanium (Ti), tungsten (W), vanadium (V) and zirconium (Zr) are included in this definition. For one embodiment, first barrier layer 511 contains a tantalum nitride material (TaN). The metal nitride act as a diffusion barrier to protect the underlying electrode layer 511 from subsequent oxygen ambient or metal oxide dielectrics. In an embodiment, the metal component of the metal nitride barrier layer 514 is selected to be the same as the metal component of adjacent electrode layer 511. In an embodiment, the barrier layer 514 formed according to the present invention effectively coats the hemispherical grain bottom electrode layer 511.
A dielectric layer 513 is formed overlying the first barrier layer 514. The dielectric layer 514 is shown to be adjoining the first barrier layer 511, but there is no prohibition to forming additional layers interposed between the dielectric layer 513 and the first barrier layer 514 described above. Note, however, that the nature of any additional layer may affect performance of the resulting capacitor such as creating an undesirable series capacitance. Dielectric layer 513 contains a dielectric material. For one embodiment, dielectric layer 513 contains at least one metal oxide dielectric material. For another embodiment, dielectric layer 513 contains at least one dielectric material such as BazSr(1−z)TiO3 [BST; where 0<x<1], BaTiO3, SrTiO3, PbTiO3, Pb(Zr,Ti)O3 [PZT], (Pb,La)(Zr,Ti)O3 [PLZT], (Pb,La)TiO3 [PLT], Ta2O5, KNO3, Al2O3 or LiNbO3. In an embodiment, dielectric layer includes a lanthanide oxide. In an embodiment, the dielectric layer includes LiFO2, ZrO2, or combinations thereof. In an embodiment, the dielectric layer includes a high k oxide. In an embodiment, the barrier layer has ∈ value of greater than 10. For a further embodiment, dielectric layer 513 contains Ta2O5. The dielectric layer 513 is deposited, in various embodiment, by any deposition technique, e.g., RF-magnetron sputtering, chemical vapor deposition (CVD), ALD, or other suitable deposition technique. As one example, a metal oxide, e.g., tantalum oxide, may be formed by depositing a layer of the metal component, e.g., tantalum, followed by annealing in an oxygen-containing ambient. As another example, the metal oxide may be deposited by metal organic chemical vapor deposition (MOCVD). Subsequent to formation, dielectric layer 513 may be annealed in an oxygen-containing ambient, such as an ambient containing O2 or ozone, at a temperature within the range of approximately 200 to 800° C. The actual oxygen-containing ambient, concentration of oxygen species and annealing temperature may vary for the specific dielectric deposited. The bottom electrode 511 is generally not oxidized, or is only marginally oxidized, during formation or subsequent processing of the dielectric layer 513 due to the protection from the oxygen-containing ambient as provided by first barrier layer 514.
A second barrier layer 516 is formed overlying the dielectric layer 513. The second barrier layer 516 is shown to be directly adjoining the dielectric layer 513, but there is no prohibition to forming additional layers interposed between the second barrier layer 516 and the dielectric layer 513. Note, however, that the nature of any additional layer may affect performance of the resulting capacitor such as creating an undesirable series capacitance. The second barrier layer 516 is a conductive layer formed according to the enhanced ALD processes described herein. In an embodiment, the second barrier layer 516 includes a metal nitride material. In an embodiment, the second barrier layer 516 includes a refractory metal nitride material. The refractory metals of chromium (Cr), cobalt (Co), hafnium (Hf), molybdenum (Mo), niobium (Nb), tantalum (Ta), titanium (Ti), tungsten (W), vanadium (V) and zirconium (Zr) are included in this definition. For one embodiment, second barrier layer 516 contains a tantalum nitride material (TaN).
A top electrode 515 is deposited to form the top conductive layer or electrode of the capacitor. The top electrode 515 is shown to be directly adjoining the second barrier layer 516, but there is no prohibition to forming additional conductive layers interposed between the top electrode 515 and the second barrier layer 516. Top electrode 515 may be of any conductive material and generally follows the same guidelines as bottom electrode 511. Layers 511, 514, 513, 516, and 515 are patterned by techniques to a define capacitor 502 for a memory cell 500.
In the foregoing embodiments, the capacitor structures included a barrier layer interposed between the dielectric layer and each electrode. An example from these embodiments includes a a metal layer/TaN/Ta2O5/TaN/a metal layer structure for bottom electrode/barrier layer/dielectric layer/barrier layer/top electrode. In an embodiment, only a single barrier layer is formed. That is, there is no requirement to use a barrier layer on each side of the dielectric layer as described above. As an example, where the bottom electrode is not susceptible to oxidation, the first barrier layer could be eliminated. An example of this embodiment includes a Pt/TaN/Ta2O5/metal layer structure for bottom electrode/barrier layer/dielectric layer/top electrode. Similarly, where the dielectric and layers beneath the dielectric are not susceptible to oxidation, the second (top in
In an embodiment, at least one of the electrode layers 511 and 515 is formed according to the present invention. In this embodiment, there is no barrier layer intermediate the at least one electrode layer 511 or 515 formed according to the invention. If both of the electrode layers 511 and 515 are formed according to the present invention, then the capacitor is a metal-insulator-metal (MIM) capacitor. In an embodiment, the MIM capacitor has at least one TaN layer as an electrode layer, a dielectric layer and another electrode layer.
While the foregoing embodiments of capacitor structures may be used in a variety of integrated circuit devices, they are particularly suited for use as storage capacitors of memory cells found in dynamic memory devices.
In an embodiment, a further barrier layer 631 is formed according to the present invention over the gate electrode 629. A line or interconnect 633 is formed on the barrier layer 631. The line 633 is adapted to control the gate electrode 629 and hence operation of the transistor 600 by conducting a control signal from a control circuit (not shown) to the gate. Barrier layer 631 is adapted to prevent diffusion of elements from either the line 633 or gate electrode 629 to the other of the line 633 and gate electrode 629.
ALD reactor 700 includes means for supplying energy to the reactable constituents or compounds in the process gases in chamber 701 on the surface of the substrate 702. The supplied energy causes the reactable constituents to react or decompose and deposit a thin film onto an upper surface of substrate 702. In one embodiment, the supplied energy includes thermal energy supplied by heat lamps 706. Heat lamps 706 are adapted to heat the substrate and/or chamber 701 according to the teachings of the present invention. In the illustrated example, lamps 706 are positioned in the base of chamber 701. Heat lamps 706 emit a significant amount of near-infra red radiation that passes through susceptor 707 to heat substrate 702. Alternatively, susceptor 707 is heated by heat lamps 706 and substrate 702 is heated by conduction from susceptor 707. The heat lamps 706 may be placed at alternate locations according to the parameters of the specific deposition process being performed according to the present invention.
Another embodiment supplies reaction energy by a radio frequency (RF) generator 708 as shown in FIG. 7. RF generator 708 creates a RF field between substrate 702 and an anode. In the embodiment shown in
In general, the energy sources 706 and 708 are intended to provide sufficient reaction energy in a region near the surface of substrate 702 to cause decomposition and/or reaction of the constituents of the present gas to deposit the first element, e.g., the metal species, in the process gases onto a surface of the substrate. One of ordinary skill in the art will understand upon reading the disclosure that any one, combination, or equivalent of the above can be employed to provide the necessary reaction energy.
ALD reactor 700 is illustrated as a single wafer reactor, but it should be understood that the invention is applicable to batch reactors.
Furthermore, ALD reactor 700 includes associated control apparatus (not shown) for detecting, measuring and controlling process conditions within ALD reactor 700. Associated control apparatus include, as examples, temperature sensors, pressure transducers, flow meters, control valves, and control systems. Control systems include computational units such as programmable logic controls, computers and processors. Associated control apparatus further include other devices suitable for the detection, measurement and control of the various process conditions described herein.
One of ordinary skill in the art will comprehend other suitable reactors for practicing the invention described in this application, for example the reactors described in U.S. Pat. Nos. 5,879,459 and 6,305,314, herein incorporated by reference.
The control system 810 includes, integrally or separable therefrom, a machine readable media 835 which contains instructions for performing the present invention. Media 835, in various embodiments, includes electrical, magnetic, optical, mechanical, etc. storage device(s) that stores instructions that are read by control system 810. Such storage devices include magnetic disks and tape, optical disks, computer memory, etc. Control system 810 may also include a processor (not shown) for issuing instructions to control reactor 700 based upon instructions read from machine readable media 835.
It will be understood that the above description of a memory device is intended to provide a general understanding of the memory and is not a complete description of all the elements and features of a specific type of memory, such as DRAM (Dynamic Random Access Memory). Further, the invention is equally applicable to any size and type of memory circuit and is not intended to be limited to the DRAM described above. Other alternative types of devices include SRAM (Static Random Access Memory) or Flash memories. Additionally, the DRAM could be a synchronous DRAM commonly referred to as SGRAM (Synchronous Graphics Random Access Memory), SDRAM (Synchronous Dynamic Random Access Memory), SDRAM II, and DDR SDRAM (Double Data Rate SDRAM), as well as Synchlink or Rambus DRAMs and other emerging DRAM technologies.
With reference to
As shown in
Some examples of a circuit module include memory modules, device drivers, power modules, communication modems, processor modules and application-specific modules, and may include multilayer, multichip modules. Circuit module 1100 may be a subcomponent of a variety of electronic systems, such as a clock, a television, a cell phone, a personal computer, an automobile, an industrial control system, an aircraft and others. Circuit module 1100 will have a variety of leads 1110 extending therefrom and coupled to the dies 1010 providing unilateral or bilateral communication and control.
The present invention includes methods for producing improved IC structures as discussed herein. The present method uses enhanced atomic layer deposition. In an embodiment, the enhancement is the use of plasma energy during ALD. In an embodiment, the enhancement is the use of thermal energy during ALD.
The ALD uses a first precursor gas and purges the first precursor gas according to ALD processes. A plasma is created during the purging step to enhance the ALD process. A second precursor gas is provided to react with the remaining portion of the first precursor gas. The plasma disassociates the elements of the second precursor gas. This allows a disassociated element from the second precursor gas to react with at least one component of the first precursor gas at the substrate surface. The result is a layer with fewer impurities, e.g., unwanted elements, than would be formed by conventional PVD or CVD. Further, using the plasma to enhance the ALD process reduces the amount of impurities in an ALD layer formed according to the present invention. The plasma is initiated during the purge step as the second precursor pulse is of such a short duration that is the plasma is initiated during the second precursor gas pulse, the plasma will not be created fast enough to achieve the desired energy level to disassociate a component of the second precursor gas from the other components thereof. Initiating the plasma energy during the purge step results in an initial plasma of the purge gas, which in turn creates a plasma as soon as the second precursor gas flows into the chamber. Starting the plasma during the purge allows the plasma to stabilize before the second precursor flows in to the reaction chamber. The resulting structure has fewer impurities than conventional PVD, CVD, and ALD.
The structures that have metal layers formed according to the present invention do not have the depletion layers that are formed according to conventional PVD techniques. The depletion layer reduces capacitance of a capacitor, for example in a memory cell. Further, a TaN layer according to the present invention is an effective barrier layer, which allows the use of high work function materials, e.g., noble metals, platinum, rhodium, that are ineffective diffusion barriers. An ineffective diffusion barrier allows oxygen, silicon or other unwanted elements to diffuse through the layer during IC processing to change the chemical structure of layers below the barrier layer. An effective barrier layer prevents diffusion through the barrier layer during IC processing. Still further, it is believed that conventional IC processes do not teach an effective process for creating a TaN layer during IC processing.
In an embodiment, thermal energy is used to enhance ALD. The thermal energy assists in disassociating components of the precursor gases. The thermally enhanced ALD layer results in improved step coverage over PVD and CVD layers in both contact structures and hemispherical grain (“HSG”) surfaces and containers. Further, the thermally enhanced ALD provides for greater thickness control over PVD. The thermally enhanced ALD layer is more thermodynamically stable than the PVD layers. Still further, PVD of TaN, i.e., sputter Ta and add ammonia (NH3), results in a layer that has approximately 90% Ta and 10% N. Conventional processes that use only tantalum and silane result in a non-conductive layer of tantalum silicide. Thus, the present process provides for the formation of a conductive TaN layer using silane and ammonia as reactant gases.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US3381114||Dec 18, 1964||Apr 30, 1968||Nippon Electric Co||Device for manufacturing epitaxial crystals|
|US4058430||Nov 25, 1975||Nov 15, 1977||Tuomo Suntola||Method for producing compound thin films|
|US4215156||Aug 26, 1977||Jul 29, 1980||International Business Machines Corporation||Method for fabricating tantalum semiconductor contacts|
|US4333808||Feb 13, 1981||Jun 8, 1982||International Business Machines Corporation||Method for manufacture of ultra-thin film capacitor|
|US4389973||Dec 11, 1981||Jun 28, 1983||Oy Lohja Ab||Apparatus for performing growth of compound thin films|
|US4399424||Oct 5, 1981||Aug 16, 1983||Itt Industries, Inc.||Gas sensor|
|US4413022||Jun 21, 1979||Nov 1, 1983||Canon Kabushiki Kaisha||Method for performing growth of compound thin films|
|US4590042||Dec 24, 1984||May 20, 1986||Tegal Corporation||Plasma reactor having slotted manifold|
|US4647947||Sep 13, 1985||Mar 3, 1987||Tokyo Shibaura Denki Kabushiki Kaisha||Optical protuberant bubble recording medium|
|US4757360||Jul 6, 1983||Jul 12, 1988||Rca Corporation||Floating gate memory device with facing asperities on floating and control gates|
|US4767641||Jul 3, 1986||Aug 30, 1988||Leybold-Heraeus Gmbh||Plasma treatment apparatus|
|US4815962||Dec 11, 1987||Mar 28, 1989||Polaroid Corporation||Process for coating synthetic optical substrates|
|US4920071||Aug 18, 1987||Apr 24, 1990||Fairchild Camera And Instrument Corporation||High temperature interconnect system for an integrated circuit|
|US4947221||Dec 10, 1986||Aug 7, 1990||General Electric Company||Memory cell for a dense EPROM|
|US4993358||Jul 28, 1989||Feb 19, 1991||Watkins-Johnson Company||Chemical vapor deposition reactor and method of operation|
|US5006192||Nov 21, 1988||Apr 9, 1991||Mitsubishi Denki Kabushiki Kaisha||Apparatus for producing semiconductor devices|
|US5080928||Oct 5, 1990||Jan 14, 1992||Gte Laboratories Incorporated||Method for making moisture insensitive zinc sulfide based luminescent materials|
|US5091207||Jul 19, 1990||Feb 25, 1992||Fujitsu Limited||Process and apparatus for chemical vapor deposition|
|US5198029||Feb 19, 1992||Mar 30, 1993||Gte Products Corporation||Apparatus for coating small solids|
|US5262199||Apr 17, 1992||Nov 16, 1993||Center For Innovative Technology||Coating porous materials with metal oxides and other ceramics by MOCVD|
|US5429966||Jul 22, 1993||Jul 4, 1995||National Science Council||Method of fabricating a textured tunnel oxide for EEPROM applications|
|US5595606||Apr 18, 1996||Jan 21, 1997||Tokyo Electron Limited||Shower head and film forming apparatus using the same|
|US5698022||Aug 14, 1996||Dec 16, 1997||Advanced Technology Materials, Inc.||Lanthanide/phosphorus precursor compositions for MOCVD of lanthanide/phosphorus oxide films|
|US5735960||Apr 2, 1996||Apr 7, 1998||Micron Technology, Inc.||Apparatus and method to increase gas residence time in a reactor|
|US5795808||Nov 12, 1996||Aug 18, 1998||Hyundai Electronics Industries C., Ltd.||Method for forming shallow junction for semiconductor device|
|US5801105||Jun 14, 1996||Sep 1, 1998||Tdk Corporation||Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film|
|US5810923||May 10, 1996||Sep 22, 1998||Tdk Corporation||Method for forming oxide thin film and the treatment of silicon substrate|
|US5822256||Mar 5, 1997||Oct 13, 1998||Intel Corporation||Method and circuitry for usage of partially functional nonvolatile memory|
|US5828080||Aug 17, 1995||Oct 27, 1998||Tdk Corporation||Oxide thin film, electronic device substrate and electronic device|
|US5840897||Jun 7, 1995||Nov 24, 1998||Advanced Technology Materials, Inc.||Metal complex source reagents for chemical vapor deposition|
|US5855675||Mar 3, 1997||Jan 5, 1999||Genus, Inc.||Multipurpose processing chamber for chemical vapor deposition processes|
|US5879459||Aug 29, 1997||Mar 9, 1999||Genus, Inc.||Vertically-stacked process reactor and cluster tool system for atomic layer deposition|
|US5916365 *||Aug 16, 1996||Jun 29, 1999||Sherman; Arthur||Sequential chemical vapor deposition|
|US5950925||Oct 10, 1997||Sep 14, 1999||Ebara Corporation||Reactant gas ejector head|
|US5972430||Nov 26, 1997||Oct 26, 1999||Advanced Technology Materials, Inc.||Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer|
|US6013553||Jul 15, 1998||Jan 11, 2000||Texas Instruments Incorporated||Zirconium and/or hafnium oxynitride gate dielectric|
|US6015590||Nov 28, 1995||Jan 18, 2000||Neste Oy||Method for growing thin films|
|US6020024||Aug 4, 1997||Feb 1, 2000||Motorola, Inc.||Method for forming high dielectric constant metal oxides|
|US6027961||Jun 30, 1998||Feb 22, 2000||Motorola, Inc.||CMOS semiconductor devices and method of formation|
|US6057271||Jun 7, 1995||May 2, 2000||Sumitomo Electric Industries, Ltd.||Method of making a superconducting microwave component by off-axis sputtering|
|US6059885||Dec 16, 1997||May 9, 2000||Toshiba Ceramics Co., Ltd.||Vapor deposition apparatus and method for forming thin film|
|US6110529||Jun 7, 1995||Aug 29, 2000||Advanced Tech Materials||Method of forming metal films on a substrate by chemical vapor deposition|
|US6161500||Sep 30, 1997||Dec 19, 2000||Tokyo Electron Limited||Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions|
|US6171900||Apr 15, 1999||Jan 9, 2001||Taiwan Semiconductor Manufacturing Company||CVD Ta2O5/oxynitride stacked gate insulator with TiN gate electrode for sub-quarter micron MOSFET|
|US6174377||Jan 4, 1999||Jan 16, 2001||Genus, Inc.||Processing chamber for atomic layer deposition processes|
|US6200893||Mar 11, 1999||Mar 13, 2001||Genus, Inc||Radical-assisted sequential CVD|
|US6203613||Oct 19, 1999||Mar 20, 2001||International Business Machines Corporation||Atomic layer deposition with nitrate containing precursors|
|US6206972||Jul 8, 1999||Mar 27, 2001||Genus, Inc.||Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes|
|US6211035||Sep 9, 1999||Apr 3, 2001||Texas Instruments Incorporated||Integrated circuit and method|
|US6225168||Jun 4, 1998||May 1, 2001||Advanced Micro Devices, Inc.||Semiconductor device having metal gate electrode and titanium or tantalum nitride gate dielectric barrier layer and process of fabrication thereof|
|US6281144||Jul 15, 1999||Aug 28, 2001||Novellus Systems, Inc.||Exclusion of polymer film from semiconductor wafer edge and backside during film (CVD) deposition|
|US6297539||Jul 6, 2000||Oct 2, 2001||Sharp Laboratories Of America, Inc.||Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same|
|US6302964||Mar 16, 2000||Oct 16, 2001||Applied Materials, Inc.||One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system|
|US6303481||Dec 29, 2000||Oct 16, 2001||Hyundai Electronics Industries Co., Ltd.||Method for forming a gate insulating film for semiconductor devices|
|US6325017||Aug 25, 1999||Dec 4, 2001||Micron Technology, Inc.||Apparatus for forming a high dielectric film|
|US6342277||Apr 14, 1999||Jan 29, 2002||Licensee For Microelectronics: Asm America, Inc.||Sequential chemical vapor deposition|
|US6348386||Apr 16, 2001||Feb 19, 2002||Motorola, Inc.||Method for making a hafnium-based insulating film|
|US6360685||May 5, 1998||Mar 26, 2002||Applied Materials, Inc.||Sub-atmospheric chemical vapor deposition system with dopant bypass|
|US6368941||Nov 8, 2000||Apr 9, 2002||United Microelectronics Corp.||Fabrication of a shallow trench isolation by plasma oxidation|
|US6380579||Apr 11, 2000||Apr 30, 2002||Samsung Electronics Co., Ltd.||Capacitor of semiconductor device|
|US6383955||Jun 7, 1999||May 7, 2002||Asm Japan K.K.||Silicone polymer insulation film on semiconductor substrate and method for forming the film|
|US6387712||Dec 3, 1999||May 14, 2002||Tdk Corporation||Process for preparing ferroelectric thin films|
|US6391769||Mar 14, 2000||May 21, 2002||Samsung Electronics Co., Ltd.||Method for forming metal interconnection in semiconductor device and interconnection structure fabricated thereby|
|US6410432||Apr 27, 1999||Jun 25, 2002||Tokyo Electron Limited||CVD of integrated Ta and TaNx films from tantalum halide precursors|
|US6420279||Jun 28, 2001||Jul 16, 2002||Sharp Laboratories Of America, Inc.||Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate|
|US6432779||Jan 30, 2001||Aug 13, 2002||Motorola, Inc.||Selective removal of a metal oxide dielectric|
|US6444039||Mar 7, 2000||Sep 3, 2002||Simplus Systems Corporation||Three-dimensional showerhead apparatus|
|US6444895||Sep 24, 1999||Sep 3, 2002||Nec Corporation||Device and method for nondestructive inspection on semiconductor device|
|US6445023||Mar 16, 1999||Sep 3, 2002||Micron Technology, Inc.||Mixed metal nitride and boride barrier layers|
|US6448192||Apr 16, 2001||Sep 10, 2002||Motorola, Inc.||Method for forming a high dielectric constant material|
|US6458701||Oct 12, 2000||Oct 1, 2002||Samsung Electronics Co., Ltd.||Method for forming metal layer of semiconductor device using metal halide gas|
|US6465334||Oct 5, 2000||Oct 15, 2002||Advanced Micro Devices, Inc.||Enhanced electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors|
|US6468924 *||May 31, 2001||Oct 22, 2002||Samsung Electronics Co., Ltd.||Methods of forming thin films by atomic layer deposition|
|US6475276 *||Oct 13, 2000||Nov 5, 2002||Asm Microchemistry Oy||Production of elemental thin films using a boron-containing reducing agent|
|US6482733 *||Apr 26, 2001||Nov 19, 2002||Asm Microchemistry Oy||Protective layers prior to alternating layer deposition|
|US6482740||May 15, 2001||Nov 19, 2002||Asm Microchemistry Oy||Method of growing electrical conductors by reducing metal oxide film with organic compound containing -OH, -CHO, or -COOH|
|US6486047 *||May 31, 2001||Nov 26, 2002||Electronics And Telecommunications Research Institute||Apparatus for forming strontium-tantalum-oxide thin film|
|US6495436||Feb 9, 2001||Dec 17, 2002||Micron Technology, Inc.||Formation of metal oxide gate dielectric|
|US6514828||Apr 20, 2001||Feb 4, 2003||Micron Technology, Inc.||Method of fabricating a highly reliable gate oxide|
|US6521911||Jul 19, 2001||Feb 18, 2003||North Carolina State University||High dielectric constant metal silicates formed by controlled metal-surface reactions|
|US6524952 *||Jun 20, 2000||Feb 25, 2003||Applied Materials, Inc.||Method of forming a titanium silicide layer on a substrate|
|US6534395 *||Mar 6, 2001||Mar 18, 2003||Asm Microchemistry Oy||Method of forming graded thin films using alternating pulses of vapor phase reactants|
|US6534420||Jul 18, 2001||Mar 18, 2003||Micron Technology, Inc.||Methods for forming dielectric materials and methods for forming semiconductor devices|
|US6551399 *||Jan 10, 2000||Apr 22, 2003||Genus Inc.||Fully integrated process for MIM capacitors using atomic layer deposition|
|US6576053 *||Oct 6, 2000||Jun 10, 2003||Samsung Electronics Co., Ltd.||Method of forming thin film using atomic layer deposition method|
|US6590251 *||Jul 23, 2001||Jul 8, 2003||Samsung Electronics Co., Ltd.||Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitors|
|US6605549 *||Sep 29, 2001||Aug 12, 2003||Intel Corporation||Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectrics|
|US6617634 *||Feb 12, 2002||Sep 9, 2003||Micron Technology, Inc.||RuSixOy-containing adhesion layers and process for fabricating the same|
|US6620670 *||Jan 18, 2002||Sep 16, 2003||Applied Materials, Inc.||Process conditions and precursors for atomic layer deposition (ALD) of AL2O3|
|US6630201 *||Oct 24, 2001||Oct 7, 2003||Angstron Systems, Inc.||Adsorption process for atomic layer deposition|
|US6656282 *||Oct 11, 2001||Dec 2, 2003||Moohan Co., Ltd.||Atomic layer deposition apparatus and process using remote plasma|
|US6723642 *||Feb 27, 2003||Apr 20, 2004||Electronics And Telecommunications Research Institute||Method for forming nitrogen-containing oxide thin film using plasma enhanced atomic layer deposition|
|US6727169 *||Aug 23, 2000||Apr 27, 2004||Asm International, N.V.||Method of making conformal lining layers for damascene metallization|
|US20010009695||Jan 18, 2001||Jul 26, 2001||Saanila Ville Antero||Process for growing metalloid thin films|
|US20010048981||Dec 11, 1998||Dec 6, 2001||Nobumasa Suzuki||Method of processing substrate|
|US20010050039||Jun 5, 2001||Dec 13, 2001||Park Chang-Soo||Method of forming a thin film using atomic layer deposition method|
|US20020089023||Jan 5, 2001||Jul 11, 2002||Motorola, Inc.||Low leakage current metal oxide-nitrides and method of fabricating same|
|US20020146916||Mar 29, 2002||Oct 10, 2002||Kiyoshi Irino||Semiconductor device having a high-dielectric gate insulation film and fabrication process thereof|
|US20020155688||Apr 20, 2001||Oct 24, 2002||Ahn Kie Y.||Highly reliable gate oxide and method of fabrication|
|US20020155689||Feb 11, 2002||Oct 24, 2002||Ahn Kie Y.||Highly reliable gate oxide and method of fabrication|
|US20020160125||Feb 15, 2002||Oct 31, 2002||Johnson Wayne L.||Pulsed plasma processing method and apparatus|
|US20020192974||Jun 13, 2001||Dec 19, 2002||Ahn Kie Y.||Dielectric layer forming method and devices formed therewith|
|US20030017717||Jul 18, 2001||Jan 23, 2003||Ahn Kie Y.||Methods for forming dielectric materials and methods for forming semiconductor devices|
|JP2001332546A||Title not available|
|JPH0590169A||Title not available|
|JPS62199019A||Title not available|
|1||Aarik, Jaan , et al., "Atomic layer growth of epitaxial TiO/sub 2/thin films from TiCI/sub 4/ and H/sub 2/O on alpha -AI/sub 2/O/sub 3/ substrates", Journal of Crystal Growth, 242(1-2). (2002),189-198.|
|2||Aarik, Jaan , et al., "Influence of substrate temperature on atomic layer growth and properties of HfO/sub 2/ thin films", Thin Solid Films. 340(1-2), (1999), 110-116.|
|3||Aarik, Jaan , et al., "Phase transformations in hafnium dioxide thin films grown by atomIc layer doposition at high temperatures", Applied Surface Science, 173(1-2), (Mar. 2001),15-21.|
|4||Aarik, Jaan , et al., "Texture Development in nanocrystalline hafnium dioxide thin films grown by atomic layer deposition", Journal of Crystal Growth, 220, (2000),105-113.|
|5||Ahn, Kie Y., et al., "Highly Reliable Amorphous High-K Gate Oxide ZrO2", Micron Docket No. 01-0516, (May 17, 2001 ),3 pages.|
|6||Alen, Petra , "Atomic Layer deposition of Ta(AI)N(C) thin films using trimethylaluminum as a reducing agent", Journal of the Electrochemical Society, 148(10), (Oct. 2001),G566-G571.|
|7||Bendoraitis, J G., et al., "Optical energy gaps in the monoclinic oxides of hafnium and zirconium and their solid solutions", Journal of Physical Chemistry, 69(10), (1965),3666-3667.|
|8||Bright, A A., et al., "Low-rate plasma oxidation of Si in a dilute oxygen/helium plasma for low-temperature gate quality Si/Sio2 interfaces", Applied Physics Letters, 58(6), (Feb. 1991 ),619-621.|
|9||Bunshah, Rointan F., et al., "Deposition Technologies for Films and Coatings: Developments and Applications", Park Ridge, N.J., U.S.A.: Noyes Publications, (1982),102-103.|
|10||Cava, R J., et al, "Improyament of the dielectric properties of Ta/sub 2/O/sub 5/ through substitution with Al/sub 2/O/sub 3/", Applied Physics Letters, 70(11), (Mar. 1997),1396-8.|
|11||Cheng, Baohong , et al., "The Impact of High-k Gate Dielectrics and Metal Gate Electrodes on Sub-100nm MOSFET's", IEEE Transactions on Electron Devices, 46(7), (Jul. 1999),1537-1544.|
|12||Copel, M. , et al., "Structure and stability of ultrathin zirconium oxide layers on Si(001)", Applied Physics Letters, 76(4), (Jan. 2000),436-438.|
|13||De Flaviis, Franco , et al., "Planar microwave integrated phase-shifter design with high purity ferroelectric material", IEEE Transactions on Microwave Theory & Techniques, 45(6), (Jun. 1997),963-969.|
|14||Desu, S B., "Minimization of Fatigue in Ferroelectric Films", Physica Status Solidi A, 151(2), (1995),467-480.|
|15||Dusco, C , et al., "Deposition of tin oxide into porous silicon by atomic layer epitaxy", Journal of the Electrochemical Society, 143, (1996),683-687.|
|16||El-Kareh, B , et al., "The evolution of DRAM cell technology", Solid State Technology, 40(5), (1997),89-90, 92, 95-6, 98, 100-1.|
|17||Engelhardt, M., "Modern Applications of Plasma Etching and Patterning in Silicon Process Technology", Contributions to Plasma Physics, 39(5), (1999),473-478.|
|18||Fong, Y. , et al., "Oxides Grown on Textured Single-Crystal Silicon-Dependence on Process and Application in EEPROMs", IEEE Transactions on Electron Devices, 37(3), (Mar. I990),pp. 583-590.|
|19||Fuyuki, Takashi , et al., "Electronic Properties of the Interface between Si and TiO2 Deposited at Very Low Temperatures", Japanese Journal of Applied Physics, vol. 25, No. 9, (1986),1288-1291.|
|20||Fuyuki, Takashi, et al., "Initial stage of ultra-thin SiO/sub 2/ formation at low temperatures using activated oxygen", Applied Surface Science, 117-118, (Jun. 1997),123-126.|
|21||Gartner, M , et al., "Spectroellipsometric characterization of lanthanide-doped TiO2 films obtained via the sol-gel technique", Thin Solid Films, 234(1-2), (1993),561-565.|
|22||Gasser, Werner , et al., "Quasi-monolayer deposition of silicon dioxide", ThIn Solid Films, 250(1-2), (1994),213-218.|
|23||Geller, S. , et al., "Crystallographic Studies of Perovskite-like Compounds. II. Rare Earth Aluminates", Acta Cryst. vol. 9, (May 1956),1019-1025.|
|24||Geusic, J. , et al., "Structured Silicon Surfaces and Tunnel Oxides for Flash Memory Devices", Micron Disclosure, (Sep. 25, 1997).|
|25||Giess, E. A., et al., "Lanthanide gallate perovskite-type substrates fot epitaxial, high-T/sub c/ superconducting Ba/sub 2/YCu/sub 3/O/sub 7- delta / films", IBM Journal of Research and Development, 34(6), (Nov. 1990),916-926.|
|26||Gusev, E P., et al., "Ultrathin High-K Dielectrics Grown by Atomic Layer Deposition: A Comparative Study of ZrO2, HfO2, Y2O3 and Al2O3", Electrochemical Society Proceedings vol. 2001-9, (2001),189-195.|
|27||Gutowski, M J., "Thermodynamic stability of high-K dielectric metal oxides ZrO/sub 2/ and HfO/sub 2/ in contact with Si and SiO/sub 2/", Applied Physics Letters, 80(11), (Mar. 18, 2002),1897-1899.|
|28||Hao, M. Y., et al., "Electrical Characteristics of Oxynitrides Grown on Textured Single-Crystal Silicon", Appl. Phys. Lett., 60, (Jan. 1992),445-447.|
|29||Hirayama, Masaki , et al., "Low-Temperature Growth of High-Integrity Silicon Oxide Films by Oxygen Radical Generated in High Density Krypton Plasma", International Electron Devices Meeting 1999, Technical Digest, (1999),249-252.|
|30||Hubbard, K. J., et al., "Thermodynamic stability of binary oxides In contact with silicon", Journal of Materials Research, 11(11), (Nov. 1996),2757-2776.|
|31||Hunt, C. E., et al:, "Direct bonding of micromachined silicon waters for laser diode heat exchanger applications", Journal of Micromechanics and Microengineering, 1(3), (Sep. 1991),152-156.|
|32||Iddles, D M., et al., "Relationships between dopants, microstructure and the microwave dielectric properties of ZrO2-TiO2-SnO2 ceramics", Journal of Materials Science, 27(23), (Dec. 1992),6303-6310.|
|33||International Technology for Semiconductor Roadmap, Industry Association, http://public.itrs.net/Files/2001ITRS/Links/1999_SIA_Roadmap/,(1999).|
|34||Jeon, Sanghun , et al., "Excellent electrical characteristics of lanthanide (Pr, Nd, Sm, Gd, and Dy) oxide and lanthanide-doped oxide for MOS gate dielectric applications", Electron Devices Meeting, 2001. IEDM Technical Digest. International, (2001),471-474.|
|35||Jeong, Chang-Wook , et al., "Plasma-Assisted Atomic layer Growth of High-Quality Aluminum Oxide Thin Films", Japanese Journal of Applied Physics, 40, (Jan. 2001),285-289.|
|36||Kawai, Y , et al., "Ultra-low-temperature growth of high-integrity gate oxide films by low-energy Ion-assisted oxidation", Applied Physics Letters, 64(17), (Apr. 1994),2223-2225.|
|37||Keomany, D , et al., "Sol gel preparation of mixed cerium-titanium oxide thin films", Solar Energy Materials and Solar Cells, 33(4), (Aug. 1994),429-441.|
|38||Kim, Byoung-Youp , et al., "Comparison study for TiN films deposited from different method: chemical vapor deposition and atomic layer deposition", Mechanisms of Surface and Microstructure Evolution in Deposited Films and Film Structures Symposium (Materials Research Society Symposium Proceedings vol. 672), (2001),7.8.1-7.8.6.|
|39||Kim, C T., et al. "Application of Al2O3 Grown by Atomic Layer Deposition to DRAM and FeRAM", International Symposium in Integrated Ferroelectrics, (Mar. 2000),316.|
|40||Kim, D. , et al., "Atomic Control of Substrate Termination and Heteroepitaxial Growth of SrTiO3/LaAlO3 Films", Journal of the Korean Physical Society, 36(6), (Jun. 2000),444-448.|
|41||Kim, Taeseok, et al., "Correlation between strain and dielectric properties in ZrTiO/sub 4/thin films", Applied Physics Letters, 76(21), (May 2000),3043-3045.|
|42||Kim, Taeseok, et al., "Dielectric properties and strain analysis in paraelectric ZrTiO/sub 4/ thin films deposited by DC magnetron sputtering", Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 39, No. 7A, (2000),4153-4157.|
|43||Kim, Y , et al., "Substrate dependence on the optical properties of Al/sub 2/O/sub 3/ films grown by atomic layer deposition", Applied Physics Letters, 71(25, 22 ), (Dec. 1997),3804-3606.|
|44||Kim, Yongjo , et al., "Effect of microstructures on the microwave dielectric properties of ZrTiO/sub 4/thin films", Applied Physics Letters, 78(16), (Apr. 2001),2363-2365.|
|45||Klaus, et al., "Atomic Layer Controlled Growth of SiO2 Films Using Binary Reaction Sequence Chemistry", Applied Physics Lett. 70(9), (Mar. 3, 1997),1092-94.|
|46||Krauter, G. , et al., "Room Temperature Silicon Wafer Bonding with Ultra-Thin Polymer Films", Advanced Materials, 9(5), (1997),417-420.|
|47||Kukli, K , et al., "Controlled growth of yttrium oxysulphide thin films by atomic layer deposition", Materials Science Forum, 315-317, (1999),216-221.|
|48||Kukli, K J., et al., "Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen", Journal of Applied Physics, 92(10), (Nov. 15, 2002),5698-5703.|
|49||Kukli, K, et al., "Comparison of hafnium oxide films grown by atomic layer deposition from iodide and chloride precursors", Thin Solid Films, 416, (2002),72-79.|
|50||Kukli, Kaupo , "Atomic Layer Deposition of Titanium Oxide from TiI4 and H2O2", Chemical Vapor Deposition, 6(6), (2000),303-310.|
|51||Kukli, Kaupo , et al., "Dielectric Properties of Zirconium Oxide Grown by Atomic Layer Deposition from Iodide Precursor", Journal of The Electrochemical Society, 148(12),(2001),F227-F232.|
|52||Kukli, Kaupo , et al., "Influence of thickness and growth temperature on the properties of zirconium oxide films growth by atomic layer deposition on silicon", Thin Solid Films, 410(1-2), (2002),53-80.|
|53||Kukli, Kaupo , et al., "Low-Temperature Deposition of Zirconium Oxide-Based Nanocrystalline Films by Alternate Supply of Zr[OC(CH3)3]4 and H2O", Chemical Vapor Deposition, 6(6), (2000),297-302.|
|54||Lee, A E., et al., "Epitaxially grown sputtered LaAlO3 films", Applied Physics Letters, 57(19), (Nov. 1990),2019-2021.|
|55||Lee, Byoung H., et al., "Ultrathin Hafnium Oxide with Low Leakage and Excellent Reliability for Alternative Gate Dielectric Application", Technical Digest of IEDM, (1999),133-136.|
|56||Lee, C H., et al., "MOS Devices with High Quality Ultra Thin CVD ZrO2 Gate Dielectrics and Self-Aligned TaN and TaN/Poly-Si Gate electrodes", 2001 Symposium on VLSI, Technology Digest of Technical Papers, (2001),137-138.|
|57||Lee, C. H., et al., "MOS Characteristics of Ultra Thin Rapid Thermal CVD ZrO2 and Zr Silicate Gate Dielectrics", Electron Devices Meeting, 2000. IEDM Technical Digest International, (2000),27-30.|
|58||Lee, Cheng-Chung , et al., "Ion-assisted deposition of silver thin films", Thin Solid Films, 359(1), (Jan. 2000),95-97.|
|59||Lee, Dong H., et al., "Metalorganic chemical vapor deposition of TiO2:N anatase thin film on Si substrate", Appl. Phys. Lett., 66(7), (Feb. 1995),815-816.|
|60||Lee, LP., et al., "Monolithic 77 K dc SQUID magnetometer", Applied Physics-Letters, 59(23), (Dec. 1991 ),3051-3053.|
|61||Leskela, M. , et al., "ALD precursor chemistry: Evolution and future-challenges", J. Phys. IV France, 9, (1999),837-852.|
|62||Liu, C. T., "Circuit Requirement and Integration Challenges of Thin Gate Dielectrics for Ultra SmalI MOSFETs", lnternational Electron Devices Meeting 1998. Technical Digest, (1998),747-750.|
|63||Liu, V C., at al., "Growth of ultrathln SiO/sub 2/ on Si by surface irradiation with an O/sub 2/+Ar electron cyclotron resonance microwave plasma at low temperatutes", Journal of Applied Physics, 85(3), (Feb. 1999),1911-1915.|
|64||Lucovsky, G et al., "Microscopic model for enhanced dielectric constants in low concentration SiO/sub 2/-rich noncrystalline Zr and Hf silicate alloys", Applied Physics Letters, 77(18), (Oct. 2000),2912-2914.|
|65||Luo, Z J., et al., "Ultra-thin ZrO2 (or Silicate) with High Thermal Stability for CMOS GAte Applications", 2001 Symposium on VLSI Technology Digest of Technical Papers, (2001),135-136.|
|66||Martin, P J., et al., "Ion-beam-assisted deposition of thin films", Applied Optics, 22(1), (Jan.1983),178-184.|
|67||Molodyk, A A., et al., "Volatile Surfactant-Assisted MOCVD: Application to LaAI03 Thin Film Growth", Chemical Vapor Deposition, 6(3), (Jun. 2000),133-138.|
|68||Molsa, Heini , et al., "Growth of yttrium oxide thin films from beta -diketonate precursor", Advanced Materials for Optics and Electronics, 4(6), (Nov.-Dec. 1994),389-400.|
|69||Muller, D. A., "The Electronic Structure at the Atomic Scale of Ultrathin Gate Oxides", Nature, 399, (Jun. 1999),758-761.|
|70||Muller, D. A., et al., "The electronic structure at the atomic scale of ultrathin gate oxides", Nature, 399(6738), (Jun. 24, 1999),758-61.|
|71||Nakagawara, Osamu , et al., "Electrical properties of (Zr, Sn)TiO4 dielectric thin film prepared by pulsed laser deposition", Journal of Applied Physics, 80(1), (Jul. 1996),388-392.|
|72||Nakajima, Anri , et al., "Atomic-layer deposition of ZrO/sub 2/ with a Si nitride barrier layer", Applied Physics Letters, vol. 81, No. 15, (Oct. 2002),2824-2826.|
|73||Nakajima, Anri , et al., "NH/sub 3/-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability", Applied Physics Letters, 80(7), (Feb. 2002),1252-1254.|
|74||Neumayer, D A., et al., "Materials characterization of ZrO/sub 2/-SiO/sub 2/ and HfO/sub 2/-SiO/sub 2/ binary oxides deposited by chemical solution deposition", Journal of Applied Physics, 90(4), (Aug. 15, 2001),1801-1808.|
|75||Nieminen, Minna, et al., "Formation and stability of lanthanum oxide thin films deposited from B-diketonate precursor", Applied Surface Science, 174(2), (Apr. 16, 2001),155-165.|
|76||Niilisk, A , "Atomic-scale optical monitoring of the initial growth of TiO2 thin films", Proceedings of the SPIE-The International Society for Optical Engineering, 4318, (2001),72-77.|
|77||Oates, D E., et al., "Surface impedance measurements of YBa/sub 2/Cu/sub 3/O/sub 7-x/ thin films in stripline resonators", IEEE Transactions on Magnetics, vol. 27, No. 2, pt.2, (Mar, 1991),867-871.|
|78||Ohring, Milton, "The Materials Science of Thin Films", Boston : Academic Press, (1992),118,121,125.|
|79||Osten, H. J., et al., "High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide", International Electron Devices Meeting 2000. Technical Digest. IEDM, (2000),653-656.|
|80||Ott, A W., et al., "Al3O3 Thin Film Growth on Si(100) Using Binary Reaction Sequence Chemistry", Thin Solid Films, vol. 292, (1997),135-44.|
|81||Pan, Tung M., et aI., "High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films", Applied Physics Letters, 78(10), (Mar. 5, 2001),1439-1441.|
|82||Pan, Tung M., et al., "High quality ultrathin CoTiO/sub 3/ high-k gate dielectrics", Electrochemical and Solid-State Letters, 3(9), (Sep. 2000),433-434.|
|83||Park, Byung-Eun , el al., "Electrical properties of LaAIO3/Si and Sr0.8Bi2.2Ta2O9/LaAIO3/Si structures", Applied Physics Letters, 79(6), (Aug. 2001),806-808.|
|84||Perkins, Charles M., et al., "Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition", Applied Physics Letters, 78(16), (Apr. 2001),2357-2359.|
|85||Poveshchenko, V P., et al., "Investigation of the phas composition of films of zirconium, hafnium and yttrium oxides", Soviet Journal of Optical Technology, 51(5), (1984),277-279.|
|86||Qi, Wen-Jie , et al., "MOSCAP and MOSFET characteristics using Zr02 gate dielectric deposited directly on Si", Electron Devices Meeting, 1999. IEDM Technical Digest, International, (1999),145-148.|
|87||Qi, Wen-Jie , et al., "Performance of MOSFETs with ultra thin ZrO/sub 2/and Zr silicate gate dielectrics", 2000 Symposium on VLSI Technology, Digest of Technical Papers, (2000),40-41.|
|88||Rahtu, Antti, et al., "Atomic Layer Deposition of Zirconium Titanium Oxide from Titanium Isopropoxide and Zirconium Chloride", Chemistry of Materials, 13(5), (May 2001),1528-1532.|
|89||Ramakrishnan, E S., et al., "Dielectric properties of radio frequency magnetron sputter deposited zirconium titanate-based thin films", Journal of the Electrochemical Society, 145(1), (Jan. 1998),358-362.|
|90||Rayner Jr., G , et al., "The structure of plasma-deposited and annealed pseudo-binary ZrO2-SiO2 alloys", Materials Research Society Symposium-Proceedings, 611, (2000),C131-C139.|
|91||Ritala, Mikko , et al., "Zirconium dioxide thin films deposited by ALE using zirconium tetrachioride as precursor", Applied Surface Science, 75, (Jan. 1994),333-340.|
|92||Ritala, Mikko, "Atomic Layer Epitaxy Growth of Titanium, Zirconium and. Hafnium Dioxide Thin Films", Annales Academiae Scientiarum Fennicae, (1994),24-25.|
|93||Robertson, J. , "Band offsets of wide-band-gap oxides and implications for future electronic devices", Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), 18(3), (May-Jun. 2000),1785-1791.|
|94||Rossnagel, S M., et al., "Plasma-enhanced atomic layer deposition of Ta and Ti for Interconnect diffusion barriers", Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), 18(4), (Jul. 2000),2016-2020.|
|95||Rotondaro, A L., et al., "Advanced CMOS Transistors with a Novel HfSiON Gate Dielectric", Symposium on VLSI Technology Digest of Technical Papers, (2002),148-149.|
|96||Saito, Yuji , et al., "Advantage of Radical Oxidation for Improving Reliability of Ultra-Thin Gate Oxide", 2000 Symposium on VLSI Technology Digest of Technical Papers, (2000),176-177.|
|97||Saito, Yuji , et al., "High-Integrity Silicon Oxide Grown at Low-Temperature by Atomic Oxygen Generated in High-Density Krypton Plasma", Extended Abstracts of the 1999 InternatIonal Conference on Solid State Devices and Materials, (1999),152-153.|
|98||Shanware, A , et al., "Reliability evaluation of HfSiON gate dielectric film with 12.8 A SiO2 equivalent thickness", International Electron Devices Meeting. Technical DIgest, (2001),137-140.|
|99||Shin, Chang H., et al., "Fabriation and Characterization of MFISFET usingAl2O3 Insulating Layer for Non-Volatile Memory", 12<SUP>th </SUP>International Symposium in Integrated Ferroelectrics, (Mar. 2000),1-9.|
|Citing Patent||Filing date||Publication date||Applicant||Title|
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|US7256094 *||May 24, 2005||Aug 14, 2007||Atmel Corporation||Method for changing threshold voltage of device in resist asher|
|US7279732||May 26, 2004||Oct 9, 2007||Micron Technology, Inc.||Enhanced atomic layer deposition|
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|US7393736 *||Aug 29, 2005||Jul 1, 2008||Micron Technology, Inc.||Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics|
|US7465627||Jul 21, 2006||Dec 16, 2008||Micron Technology, Inc.||Methods of forming capacitors|
|US7495277 *||Jul 5, 2006||Feb 24, 2009||Micron Technology, Inc.||Memory circuitry|
|US7544604 *||Aug 31, 2006||Jun 9, 2009||Micron Technology, Inc.||Tantalum lanthanide oxynitride films|
|US7601604||Oct 12, 2006||Oct 13, 2009||Atmel Corporation||Method for fabricating conducting plates for a high-Q MIM capacitor|
|US7662729||Feb 16, 2010||Micron Technology, Inc.||Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer|
|US7678838||Aug 2, 2007||Mar 16, 2010||University Of Memphis Research Foundation||Nanothin polymer films with selective pores and method of use thereof|
|US7692222||Nov 7, 2006||Apr 6, 2010||Raytheon Company||Atomic layer deposition in the formation of gate structures for III-V semiconductor|
|US7709402||Feb 16, 2006||May 4, 2010||Micron Technology, Inc.||Conductive layers for hafnium silicon oxynitride films|
|US7713868 *||Mar 30, 2007||May 11, 2010||Tokyo Electron Limited||Strained metal nitride films and method of forming|
|US7727908||Aug 3, 2006||Jun 1, 2010||Micron Technology, Inc.||Deposition of ZrA1ON films|
|US7759747||Jul 20, 2010||Micron Technology, Inc.||Tantalum aluminum oxynitride high-κ dielectric|
|US7776765 *||Aug 17, 2010||Micron Technology, Inc.||Tantalum silicon oxynitride high-k dielectrics and metal gates|
|US7789319||May 17, 2006||Sep 7, 2010||Micron Technology, Inc.||System and method for recirculating fluid supply for an injector for a semiconductor fabrication chamber|
|US7829155||Nov 9, 2010||The University Of Memphis Research Foundation||Nanothin polymer coatings containing thiol and methods of use thereof|
|US7837797||Nov 23, 2010||Micron Technology, Inc.||Systems and methods for forming niobium and/or vanadium containing layers using atomic layer deposition|
|US7872291||Jan 18, 2011||Round Rock Research, Llc||Enhanced atomic layer deposition|
|US7875912||Jan 25, 2011||Micron Technology, Inc.||Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics|
|US7902582||Mar 8, 2011||Micron Technology, Inc.||Tantalum lanthanide oxynitride films|
|US7915174||Jul 22, 2008||Mar 29, 2011||Micron Technology, Inc.||Dielectric stack containing lanthanum and hafnium|
|US7923322||Apr 12, 2011||Micron Technology, Inc.||Method of forming a capacitor|
|US7923381||Jul 11, 2008||Apr 12, 2011||Micron Technology, Inc.||Methods of forming electronic devices containing Zr-Sn-Ti-O films|
|US8022548||Sep 29, 2009||Sep 20, 2011||Atmel Corporation||Method for fabricating conducting plates for a high-Q MIM capacitor|
|US8067794||May 3, 2010||Nov 29, 2011||Micron Technology, Inc.||Conductive layers for hafnium silicon oxynitride films|
|US8084370||Oct 19, 2009||Dec 27, 2011||Micron Technology, Inc.||Hafnium tantalum oxynitride dielectric|
|US8114763||Jul 19, 2010||Feb 14, 2012||Micron Technology, Inc.||Tantalum aluminum oxynitride high-K dielectric|
|US8168502 *||May 1, 2012||Micron Technology, Inc.||Tantalum silicon oxynitride high-K dielectrics and metal gates|
|US8227322 *||Jul 24, 2012||Sensor Electronic Technology, Inc.||Methods of growing nitride-based film using varying pulses|
|US8278225||Oct 2, 2012||Micron Technology, Inc.||Hafnium tantalum oxide dielectrics|
|US8362576||Jan 14, 2011||Jan 29, 2013||Round Rock Research, Llc||Transistor with reduced depletion field width|
|US8445952||May 21, 2013||Micron Technology, Inc.||Zr-Sn-Ti-O films|
|US8466016||Dec 20, 2011||Jun 18, 2013||Micron Technolgy, Inc.||Hafnium tantalum oxynitride dielectric|
|US8497542||Jan 18, 2011||Jul 30, 2013||Micron Technology, Inc.||ZrXHfYSn1-X-YO2 films as high K gate dielectrics|
|US8519015||Mar 9, 2010||Aug 27, 2013||University Of Memphis Research Foundation||Nanothin polymer films with selective pores and method of use thereof|
|US8519466||Apr 27, 2012||Aug 27, 2013||Micron Technology, Inc.||Tantalum silicon oxynitride high-K dielectrics and metal gates|
|US8524618||Sep 13, 2012||Sep 3, 2013||Micron Technology, Inc.||Hafnium tantalum oxide dielectrics|
|US8557672||Feb 7, 2012||Oct 15, 2013||Micron Technology, Inc.||Dielectrics containing at least one of a refractory metal or a non-refractory metal|
|US8633110||Nov 14, 2011||Jan 21, 2014||Micron Technology, Inc.||Titanium nitride films|
|US8747964||Sep 23, 2011||Jun 10, 2014||Novellus Systems, Inc.||Ion-induced atomic layer deposition of tantalum|
|US8759170||Jun 11, 2013||Jun 24, 2014||Micron Technology, Inc.||Hafnium tantalum oxynitride dielectric|
|US8772851||Oct 11, 2013||Jul 8, 2014||Micron Technology, Inc.||Dielectrics containing at least one of a refractory metal or a non-refractory metal|
|US8785312||Nov 28, 2011||Jul 22, 2014||Micron Technology, Inc.||Conductive layers for hafnium silicon oxynitride|
|US8816447||Jan 28, 2013||Aug 26, 2014||Round Rock Research, Llc||Transistor with reduced depletion field width|
|US8951880||Jul 3, 2014||Feb 10, 2015||Micron Technology, Inc.||Dielectrics containing at least one of a refractory metal or a non-refractory metal|
|US8993455||May 28, 2010||Mar 31, 2015||Micron Technology, Inc.||ZrAlON films|
|US9236245||Mar 20, 2015||Jan 12, 2016||Micron Technology, Inc.||ZrA1ON films|
|US9255329||Jul 28, 2009||Feb 9, 2016||Novellus Systems, Inc.||Modulated ion-induced atomic layer deposition (MII-ALD)|
|US20040036129 *||Aug 22, 2002||Feb 26, 2004||Micron Technology, Inc.||Atomic layer deposition of CMOS gates with variable work functions|
|US20040140513 *||Jan 9, 2004||Jul 22, 2004||Micron Technology, Inc.||Atomic layer deposition of CMOS gates with variable work functions|
|US20040175926 *||Mar 7, 2003||Sep 9, 2004||Advanced Micro Devices, Inc.||Method for manufacturing a semiconductor component having a barrier-lined opening|
|US20040217410 *||May 26, 2004||Nov 4, 2004||Micron Technology, Inc.||Enhanced atomic layer deposition|
|US20040224485 *||Jun 7, 2004||Nov 11, 2004||Michael Nuttall||Methods of forming capacitors|
|US20050032342 *||Aug 30, 2004||Feb 10, 2005||Micron Technology, Inc.||Atomic layer deposition of CMOS gates with variable work functions|
|US20050054196 *||Sep 8, 2003||Mar 10, 2005||Taiwan Semiconductor Manufacturing Co.,||Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology|
|US20050124175 *||Jan 13, 2005||Jun 9, 2005||Kie Ahn||Lanthanide oxide/zirconium oxide atomic layer deposited nanolaminate gate dielectrics|
|US20050168915 *||Apr 23, 2003||Aug 4, 2005||Hans-Joachim Mussig||Semiconductor capacitor with praseodymium oxide as dielectric|
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|US20060019475 *||Sep 23, 2005||Jan 26, 2006||Michael Nuttall||Method of depositing polysilicon|
|US20060033140 *||Aug 13, 2004||Feb 16, 2006||Graettinger Thomas M||Memory circuitry|
|US20060148180 *||Jan 5, 2005||Jul 6, 2006||Micron Technology, Inc.||Atomic layer deposited hafnium tantalum oxide dielectrics|
|US20060249772 *||Jul 5, 2006||Nov 9, 2006||Graettinger Thomas M||Memory circuitry|
|US20060258085 *||Jul 21, 2006||Nov 16, 2006||Derderian Garo J||Methods of forming capacitors|
|US20060270172 *||May 24, 2005||Nov 30, 2006||Wang Chungdar D||Method for changing threshold voltage of device in resist asher|
|US20070049051 *||Aug 29, 2005||Mar 1, 2007||Micron Technology, Inc.||Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics|
|US20070141258 *||Feb 6, 2007||Jun 21, 2007||Qhalid Fareed||Methods of growing nitride-based film using varying pulses|
|US20070266941 *||May 17, 2006||Nov 22, 2007||Marsh Eugene P||System and method for recirculating fluid supply for an injector for a semiconductor fabrication chamber|
|US20070298331 *||Oct 3, 2006||Dec 27, 2007||Gudeng Precision Industrial Co., Ltd.||Gas filling apparatus for photomask box|
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|US20080105901 *||Nov 7, 2006||May 8, 2008||Kamal Tabatabaie||Atomic layer deposition in the formation of gate structures for iii-v semiconductor|
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|US20100019349 *||Sep 29, 2009||Jan 28, 2010||Atmel Corporation||Method for fabricating conducting plates for a high-q mim capacitor|
|US20100157286 *||Mar 9, 2010||Jun 24, 2010||University Of Memphis Research Foundation||Nanothin polymer films with selective pores and method of use thereof|
|US20100183825 *||Jul 22, 2010||Cambridge Nanotech Inc.||Plasma atomic layer deposition system and method|
|US20100301428 *||Aug 12, 2010||Dec 2, 2010||Leonard Forbes||Tantalum silicon oxynitride high-k dielectrics and metal gates|
|US20120083134 *||Sep 15, 2011||Apr 5, 2012||Hui-Jung Wu||Method of mitigating substrate damage during deposition processes|
|WO2011049816A2 *||Oct 14, 2010||Apr 28, 2011||Asm International N.V.||Processes for passivating dielectric films|
|WO2011049816A3 *||Oct 14, 2010||Oct 13, 2011||Asm International N.V.||Processes for passivating dielectric films|
|U.S. Classification||438/622, 438/674, 438/641, 257/E21.013, 257/E21.168, 257/E21.021, 257/E21.171|
|International Classification||H01L21/285, H01L21/28, C23C16/455, C23C16/44, H01L21/02, H01L21/314, C23C16/515, H01L21/768, H01L29/51|
|Cooperative Classification||C23C16/515, H01L29/513, H01L21/28194, H01L29/518, H01L21/28202, H01L29/517, H01L29/511, H01L28/84, H01L21/28185, H01L21/28568, H01L21/76843, H01L21/28562, H01L21/3141, H01L28/75, C23C16/45542|
|European Classification||H01L29/51N, H01L21/768C3B, C23C16/515, H01L29/51B2, H01L21/285B4H2, H01L21/28E2C2D, H01L29/51M, H01L21/28E2C2C, C23C16/455F2B8F|
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