|Publication number||US7041537 B2|
|Application number||US 10/723,127|
|Publication date||May 9, 2006|
|Filing date||Nov 25, 2003|
|Priority date||Aug 23, 2002|
|Also published as||US6891248, US7002248, US20040036157, US20040115865, US20040238957|
|Publication number||10723127, 723127, US 7041537 B2, US 7041537B2, US-B2-7041537, US7041537 B2, US7041537B2|
|Inventors||Salman Akram, Mike Brooks|
|Original Assignee||Micron Technology, Inc.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (36), Referenced by (12), Classifications (35), Legal Events (4)|
|External Links: USPTO, USPTO Assignment, Espacenet|
This application is a division of Ser. No. 10/226,472, filed Aug. 23, 2002, U.S. Pat. No. 6,891,248 B2.
This application is related to Ser. No. 10/887,255, filed Jul. 7, 2004.
This invention relates generally to semiconductor manufacture and packaging. More particularly, this invention relates to a semiconductor component having an on board capacitor, to a method for fabricating the component, and to systems incorporating the component.
One type of semiconductor package includes several semiconductor components in a single package module. The semiconductor components can be in the form of semiconductor dice, semiconductor packages, or semiconductor wafers. This type of package is sometimes referred to as a multi chip module (MCM) package, or as a system in a package (SIP).
Typically, the MCM package is constructed to provide a system level of functionality, such as a control or memory function. As such, the MCM package can include different types of semiconductor components configured to perform different functions in the system. For example, a MCM package configured as a micro controller can include a microprocessor component, and one or more memory components, such as SRAMs, DRAMs, or flash memories.
MCM packages offer increased system performance, because the integrated circuits on the semiconductor components can be operated more efficiently. This is largely a result of decreasing the interconnection length between the components. In addition, system performance is improved because the input/output ports for the MCM package can be configured to access the whole system, which can be organized to reduce signal delays and access times. The power requirements are also reduced due to a reduction in the driver requirements.
One problem that occurs in the MCM packages results from parasitic inductance. For example, parasitic inductance can result from switching transients and cross coupling between the conductors (e.g., wires or traces) that electrically connect the different components in the MCM package. Parasitic inductance can cause transient voltages, spurious signals, and power supply noise, which degrade the operation of the semiconductor components, and adversely affect the performance of the system. Parasitic inductance can also make testing of the MCM packages more difficult because false readings are obtained, making electrical evaluation of the packages more difficult. Parasitic inductance is particularly a problem at clocking speeds of 500 mHz or more.
One technique for overcoming parasitic inductance is by filtering the transient voltages, spurious signals and power supply noise. For example, external de coupling capacitors can be surface mounted within the MCM packages or on a substrate, such as a circuit board or test board, containing the MCM packages. One problem with these external capacitors is that they are susceptible to shorting, and also to mechanical damage due to their surface mounting. In addition, the conductive paths between the capacitors and the components, or the integrated circuits on the components, can also produce parasitic inductance. As MCM packages, and other systems containing multiple semiconductor components, become more densely populated with components, problems associated with parasitic inductance are increased.
The present invention reduces the problems associated with parasitic inductance by incorporating an on board capacitor into the structure of a component. In addition, the on board capacitor is more durable than conventional surface mount capacitors, is protected by the structure of the component, and is closer to the integrated circuits contained on the component. The present invention is also directed to a novel method for fabricating components with on board capacitors, and to improved systems incorporating the components.
In accordance with the present invention, a semiconductor component, a method for fabricating the component, and systems incorporating the component are provided. In an illustrative embodiment, the component comprises a semiconductor package containing a single die. The die includes integrated circuits, and die contacts, such as bond pads, in electrical communication with the integrated circuits.
In addition to the die, the component includes an array terminal contacts, and an on board capacitor in electrical communication with selected terminal contacts and selected die contacts. The capacitor is configured to filter transient voltages, spurious signals, and power supply noise resulting from parasitic inductance. The capacitor includes a first electrode and a second electrode separated by a dielectric layer. In the illustrative embodiment, the first electrode is in electrical communication with a ground (Vss) die contact, and with a ground (Vss) terminal contact. The second electrode is in electrical communication with a power (Vcc) die contact, and with a power (Vcc) terminal contact.
The fabrication method is preferably performed on a wafer containing multiple semiconductor dice which are made into the components, and then singulated into the separate components. The fabrication method includes the steps of forming the first electrodes on the dice using a first metal layer in contact with the ground (Vss) die contacts, forming a dielectric layer on the first electrodes, and then forming second electrodes on the dice using a second metal layer in contact with the power (Vcc) die contacts. The first metal layer can comprise a portion of a first redistribution layer (RDL1) formed on an electrically insulating layer such as a passivation layer. The dielectric layer can comprise a deposited and cured polymer, and the second metal layer can comprise a portion of a second redistribution layer (RDL2).
The component can be used to construct systems such as MCM packages, and multi chip modules. In an alternate embodiment a wafer component comprises a semiconductor wafer containing multiple dice, with each die having an on board capacitor. The wafer component can be used to construct systems such as circuit boards and modules.
As used herein, the term “semiconductor component” refers to an electronic element that includes a semiconductor die. Exemplary semiconductor components include semiconductor dice, semiconductor packages, semiconductor wafers, BGA devices, multi chip modules and circuit boards.
The component 10P includes a semiconductor die 12, and a plurality of terminal contacts 14. The die 12 can comprise a conventional semiconductor die having a desired electrical configuration. For example, the die 12 can be a memory device, such as a DRAM, SRAM or flash memory. In the illustrative embodiment, the component 10P and the die 12 are generally rectangular in shape, but other shapes such as square can be utilized. In addition, the component 10P and the die 12 are substantially the same size, and have matching peripheral outlines.
The die 12 includes a pattern of die contacts 16, such as bond pads embedded within an electrically insulating passivation layer 18 (
The component 10P also includes an outer protective layer 28. As shown in
The terminal contacts 14 can comprise solder bumps, or balls, bonded to under bump metallization layers 30. The terminal contacts 14 provide electrical connection points from the outside world to the integrated circuits 24 and other electrical devices on the component 10P. In the illustrative embodiment, the terminal contacts 14 are arranged in a ball grid array composed of six rows and sixteen columns. However, as is apparent, other dense area arrays, or patterning arrangements, can be used for locating the terminal contacts 14. The terminal contacts 14 permit the component 10P to be flip chip mounted circuit side down to mating electrodes on a supporting substrate, such as a circuit board. Accordingly the component 10P can be referred to as a “flip chip” component.
The component 10P also includes an on board capacitor 32 configured to filter transient voltages and spurious signals, such as those produced by parasitic inductance, and to reduce power supply noise. The capacitor 32 thus improves the performance of the component 10P and improves test procedures, such as burn-in conducted on the component 10P. The capacitor 32 is in electrical communication with a ground terminal contact 14Vss, and in electrical communication with a power terminal contact 14Vcc for the component 10P.
As shown in
The on board capacitors 32 contained on the components 10P-1, 10P-2, 10P-3 improve the performance of the MCM package 50 by filtering transient voltages, spurious signals and power supply noise. In addition, the on board capacitors 32 are located close to the integrated circuits 24 (
The MCM package 50 also includes a substrate 52 wherein the components 10P-1, 10P-2, 10P-3 are mounted using flip chip technology. The substrate 52 includes electrodes and conductors which electrically connect the components 10P-1, 10P-2, 10P-3 in a required electrical configuration. The substrate 52 also includes external leads 54 in electrical communication with the components 10P-1, 10P-2, 10P-3. The MCM package 50 also includes a package body 56 formed of a cured plastic or other suitable material, which encapsulates the substrate 52 and the components 10P-1, 10P-2, 10P-3.
Following fabrication, the dice will be singulated into a plurality of separate components 10P. The die 12 includes integrated circuits 24 formed in a semiconducting substrate using techniques that are known in the art. The die 12 also includes internal conductors 22 in electrical communication with the integrated circuits 24. In addition, the die 12 includes the die contacts 16 in electrical communication with the integrated circuits 24. The die contacts 16 can comprise a thin film aluminum layer, or another electrically conductive material. In addition, the die contacts 16 can have a conventional shape (e.g., square or rectangular), a conventional size (e.g., 25 to 200 μm on a side), and can be arranged in a conventional configuration. As shown in
Initially as shown in
Preferably, the first (lower) electrode 34 and the ground conductor 40Vss, are formed from a first redistribution layer RDL1. Specifically, the first (lower) electrode 34 and the ground conductor 40Vss comprise portions of the first redistribution layer RDL1. Redistribution layers are typically used in semiconductor manufacture to “fan out” the signals from standard die contacts 16, to contacts of a dense area array, such as a ball grid array (BGA). In an ideal situation, the die 12 would be designed to have the die contacts 16 in a pattern that does not require the redistribution layer RDL1 to be added. For example, a semiconductor manufacturer can design the die 12 and the die contacts 16 such that the die contacts 16 are already in a grid array, for attaching solder balls of a ball grid array (BGA). However, as this ideal situation does not always exist, redistribution layers are widely used in semiconductor manufacture.
In addition to forming the first (lower) electrode 34 and the ground conductor 40Vss, the redistribution layer RDL1 can be used to form the conductors 44 (
Next, as shown in
The dielectric layer 38 can comprise a thin film dielectric material having a desired dielectric constant (E). Suitable dielectric materials include polymers, oxides, nitrides, ceramics or other high dielectric materials. For example, polyimide, tantalum pentoxide (Ta2O5) and polyvinylidenefluoride (PVDF) are suitable dielectric materials. Depending on the material a suitable process such as deposition through a nozzle, spatuling, screen printing, or stenciling can be used to form the dielectric layer 38. Also depending on the material, a curing step, such as heating at a selected temperature for a selected time period, may also be required.
Next, as shown in
Preferably, the second (upper) electrode 36 and the power conductor 42Vcc, are formed from a second redistribution layer RDL2. Specifically, the second (upper) electrode 36 and the power conductor 42Vcc comprise portions of the second redistribution layer RDL2. As shown in
Next, as shown in
As shown in
Next, as shown in
The terminal contacts 14 can be formed of a metal, such as a solder alloy. For example, the terminal contacts 14 can comprise a solder alloy, such as 95% Pb/5% Sn, 60% Pb/40% Sn, 63% In/37% Sn, or 62% Pb/36% Sn/2% Ag. Alternately, the terminal contacts 14 can comprise a conductive polymer such as an isotropic or anisotropic adhesive, or a relatively hard metal such as nickel, copper, beryllium copper, alloys of nickel, alloys of copper, alloys of beryllium copper, nickel-cobalt-iron alloys and iron-nickel alloys.
The terminal contacts 14 can be formed using a reflow process, or by electrolytic deposition or electroless deposition. Another method for forming the terminal contacts 14 is by bonding pre-fabricated balls to the under bump metallization layers 30. A ball bumper can also be employed to bond pre-fabricated balls. A suitable ball bumper is manufactured by Pac Tech Packaging Technologies of Falkensee, Germany. The terminal contacts 14 can also be formed using a conventional wire bonder apparatus adapted to form a ball bond, and then to sever the attached wire.
In addition, the number of terminal contacts 14, the diameter D (
Thus the invention provides improved semiconductor components having on board capacitors, a method for fabricating the components, and systems incorporating the components. While the invention has been described with reference to certain preferred embodiments, as will be apparent to those skilled in the art, certain changes and modifications can be made without departing from the scope of the invention as defined by the following claims.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US4260444||May 14, 1979||Apr 7, 1981||Gene Fowler And Friends, Inc.||Method of producing free-standing newspaper inserts with a tissue sample attached|
|US4322778||Jan 25, 1980||Mar 30, 1982||International Business Machines Corp.||High performance semiconductor package assembly|
|US4758926||Mar 31, 1986||Jul 19, 1988||Microelectronics And Computer Technology Corporation||Fluid-cooled integrated circuit package|
|US4803595||Nov 25, 1987||Feb 7, 1989||International Business Machines Corporation||Interposer chip technique for making engineering changes between interconnected semiconductor chips|
|US5177594||Dec 13, 1991||Jan 5, 1993||International Business Machines Corporation||Semiconductor chip interposer module with engineering change wiring and distributed decoupling capacitance|
|US5739045 *||Oct 15, 1996||Apr 14, 1998||International Business Machines Corporation||Semiconductor device with increased on chip decoupling capacitance|
|US5807762||Mar 12, 1996||Sep 15, 1998||Micron Technology, Inc.||Multi-chip module system and method of fabrication|
|US5844419||May 14, 1996||Dec 1, 1998||Micron Technology, Inc.||Method for testing semiconductor packages using decoupling capacitors to reduce noise|
|US5959310||Aug 7, 1997||Sep 28, 1999||Micron Technology, Inc.||Multi-chip module system|
|US5994759||Nov 6, 1998||Nov 30, 1999||National Semiconductor Corporation||Semiconductor-on-insulator structure with reduced parasitic capacitance|
|US6002180||Apr 23, 1998||Dec 14, 1999||Micron Technology, Inc.||Multi chip module with conductive adhesive layer|
|US6011314||Feb 1, 1999||Jan 4, 2000||Hewlett-Packard Company||Redistribution layer and under bump material structure for converting periphery conductive pads to an array of solder bumps|
|US6043109||Feb 9, 1999||Mar 28, 2000||United Microelectronics Corp.||Method of fabricating wafer-level package|
|US6077723||Apr 1, 1998||Jun 20, 2000||Micron Technology, Inc.||Method for fabricating a multi chip module with alignment member|
|US6118179||Aug 27, 1999||Sep 12, 2000||Micron Technology, Inc.||Semiconductor component with external contact polymer support member and method of fabrication|
|US6175241||Feb 19, 1999||Jan 16, 2001||Micron Technology, Inc.||Test carrier with decoupling capacitors for testing semiconductor components|
|US6184568||Nov 7, 1997||Feb 6, 2001||Micron Technology, Inc.||Integrated circuit module having on-chip surge capacitors|
|US6258623||Jul 8, 1999||Jul 10, 2001||Micron Technology, Inc.||Low profile multi-IC chip package connector|
|US6274937||Feb 1, 1999||Aug 14, 2001||Micron Technology, Inc.||Silicon multi-chip module packaging with integrated passive components and method of making|
|US6281578||Aug 15, 2000||Aug 28, 2001||Siliconware Precision Industries, Co., Ltd.||Multi-chip module package structure|
|US6285080||Nov 23, 1998||Sep 4, 2001||International Business Machines Corporation||Planar metallized substrate with embedded camber control material and method thereof|
|US6512298||Oct 29, 2001||Jan 28, 2003||Matsushita Electric Industrial Co., Ltd.||Semiconductor device and method for producing the same|
|US6555921||Oct 17, 2001||Apr 29, 2003||Samsung Electronics Co., Ltd.||Semiconductor package|
|US6586273||May 30, 2001||Jul 1, 2003||Fujitsu Limited||Semiconductor device manufacturing method having a step of applying a copper foil on a substrate as a part of a wiring connecting an electrode pad to a mounting terminal|
|US6590295||Jun 11, 2002||Jul 8, 2003||Taiwan Semiconductor Manufacturing Co., Ltd.||Microelectronic device with a spacer redistribution layer via and method of making the same|
|US6623985||Jul 28, 2000||Sep 23, 2003||Oki Electric Industry Co., Ltd.||Structure of and manufacturing method for semiconductor device employing ferroelectric substance|
|US6706584 *||Jun 29, 2001||Mar 16, 2004||Intel Corporation||On-die de-coupling capacitor using bumps or bars and method of making same|
|US6771786||Jul 7, 2000||Aug 3, 2004||Oticon A/S||Hearing aid including an integrated circuit|
|US6794098 *||Jan 22, 2002||Sep 21, 2004||Ronald M. Kubacki||Capacitor with plasma deposited dielectric|
|US6800930||Jul 31, 2002||Oct 5, 2004||Micron Technology, Inc.||Semiconductor dice having back side redistribution layer accessed using through-silicon vias, and assemblies|
|US6891248||Aug 23, 2002||May 10, 2005||Micron Technology, Inc.||Semiconductor component with on board capacitor|
|US20040012081||Jun 18, 2003||Jan 22, 2004||Kwon Heung Kyu||Semiconductor wafer having electrically connected passive device chips, passive devices and semiconductor package using the same|
|US20040036157||Aug 23, 2002||Feb 26, 2004||Salman Akram||Semiconductor component with on board capacitor and method of fabrication|
|US20040212099||May 21, 2004||Oct 28, 2004||Klein Dean A.||Semiconductor components having stacked dice and methods of fabrication|
|USRE36469||Sep 26, 1995||Dec 28, 1999||Micron Technology, Inc.||Packaging for semiconductor logic devices|
|USRE36613||Feb 29, 1996||Mar 14, 2000||Micron Technology, Inc.||Multi-chip stacked devices|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US7723831||Jun 25, 2007||May 25, 2010||Micron Technology, Inc.||Semiconductor package having die with recess and discrete component embedded within the recess|
|US7807502||Apr 19, 2010||Oct 5, 2010||Micron Technology, Inc.||Method for fabricating semiconductor packages with discrete components|
|US7964946||Jun 21, 2011||Micron Technology, Inc.||Semiconductor package having discrete components and system containing the package|
|US8174105||May 8, 2012||Micron Technology, Inc.||Stacked semiconductor package having discrete components|
|US8319354 *||Jul 12, 2011||Nov 27, 2012||Megica Corporation||Semiconductor chip with post-passivation scheme formed over passivation layer|
|US8766418 *||Jan 9, 2014||Jul 1, 2014||Panasonic Corporation||Semiconductor device|
|US20060145350 *||Dec 30, 2004||Jul 6, 2006||Harald Gross||High frequency conductors for packages of integrated circuits|
|US20080284003 *||Jun 25, 2007||Nov 20, 2008||Chua Swee Kwang||Semiconductor Packages And Method For Fabricating Semiconductor Packages With Discrete Components|
|US20100203677 *||Aug 12, 2010||Chua Swee Kwang||Method for fabricating semiconductor packages with discrete components|
|US20110012253 *||Jan 20, 2011||Chua Swee Kwang||Semiconductor Package Having Discrete Components And System Containing The Package|
|US20110215438 *||Sep 8, 2011||Chua Swee Kwang||Stacked Semiconductor Package Having Discrete Components|
|US20110266669 *||Nov 3, 2011||Megica Corporation||Semiconductor chip with post-passivation scheme formed over passivation layer|
|U.S. Classification||438/127, 257/E23.052, 438/239, 438/393, 438/110, 257/E25.023, 257/E23.036|
|International Classification||H01L25/10, H01L23/31, H01L21/8242, H01L23/522, H01L21/44, H01L21/20, H01L23/495|
|Cooperative Classification||H01L2225/1023, H01L2225/1029, H01L23/49531, H01L2924/19041, H01L2224/16, H01L23/49575, H01L25/0655, H01L23/5223, H01L2924/01079, H01L2924/01078, H01L2924/01046, H01L25/105, H01L2924/01004, H01L23/3114, H01L2924/01077|
|European Classification||H01L23/495C8, H01L23/31H1, H01L25/10J, H01L23/522C4, H01L23/495L, H01L25/065N|
|Oct 7, 2009||FPAY||Fee payment|
Year of fee payment: 4
|Dec 20, 2013||REMI||Maintenance fee reminder mailed|
|May 9, 2014||LAPS||Lapse for failure to pay maintenance fees|
|Jul 1, 2014||FP||Expired due to failure to pay maintenance fee|
Effective date: 20140509