|Publication number||US7060590 B2|
|Application number||US 10/753,172|
|Publication date||Jun 13, 2006|
|Filing date||Jan 6, 2004|
|Priority date||Jan 24, 2003|
|Also published as||US20040166649|
|Publication number||10753172, 753172, US 7060590 B2, US 7060590B2, US-B2-7060590, US7060590 B2, US7060590B2|
|Inventors||SÚverine Bressot, Olivier Rayssac, Bernard Aspar|
|Original Assignee||S.O.I. Tec Silicon On Insulator Technologies S.A., Commissariat Ó l'Energie Atomique (CEA)|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (36), Non-Patent Citations (1), Referenced by (14), Classifications (18), Legal Events (5)|
|External Links: USPTO, USPTO Assignment, Espacenet|
This application claims the benefit of U.S. provisional application No. 60/472,437 filed May 22, 2003, the entire content of which is expressly incorporated herein by reference thereto.
The method of the invention relates to transferring a layer of material from a source substrate onto a support substrate for the purpose of fabricating a composite substrate for use in applications in the fields of optics, opto-electronics, or electronics.
Fabrication of a composite substrate for use in applications in the fields of optics, opto-electronics, or electronics often involves the need for transferring a layer of a material from a source substrate onto a support substrate. The methods for transferring a layer of material from a source substrate to a support substrate generally include applying the source substrate and support substrate against each other by molecular bonding, i.e., without using adhesive or an adhesive film. The transfer of the layer is possible provided that the mechanical retention of the layer on the source substrate is lower than the mechanical retention of the layer on the support substrate. This often is achieved by providing a weakened or detachment zone between the transferable layer and the source substrate, which zone allows detachment of the transferable layer without loss of the molecular bond between the transferable layer and the support substrate.
When adhesive is used for applying the source substrate to the support substrate, however, transferring the layer becomes more difficult since the exact volume of adhesive deposited on the substrate is difficult to control. Thus, the adhesive very often projects out beyond the respective side faces or sides of the substrates to form a flash so that the periphery of the area adjacent the detachment zone is covered at least partially and often completely by the adhesive. This occurs because the transferable layer is relatively thin. In addition, since the adhesive is cured to obtain the desired adhesive strength, the adhesive flash is also cured and hardened
When this occurs, it becomes very difficult to properly detach and transfer the transferable layer. For example, the mechanical force to be applied to detach the layer becomes very high, and this may result in cleavage of one of the substrates in areas where not intended. In particular, cleavage or splitting of the support substrate may occur along fracture lines which no longer extend in a uniform plane, such as that provided by the detachment zone, but instead in a random and unpredictable manner. This causes additional polishing or other treatment steps before the surface of the transferable layer or source substrate can be used in further processing steps to form the optic, opto-electronic, or electronic component.
Thus, a need exists for an improved method for transferring a layer from a source substrate to a support substrate when adhesive is used for joining the substrates.
The invention relates to a method for transferring a transferable layer of material onto a support substrate by joining a source substrate that includes a transferable layer to a support substrate that is to receive the transferable layer by depositing an adhesive onto a surface of at least one of the substrates to create a connection zone between the substrates which connection zone includes the adhesive; treating the connection zone to increase adhesion properties of the adhesive; and detaching the transferable layer from the source substrate to provide the support substrate with the transferable layer and the connection zone.
Advantageously, the adhesive is deposited in an amount such that a peripheral zone of adhesive is formed at a periphery of at least one of the source substrate or the support substrate. This peripheral zone of adhesive may be created when the adhesive is deposited or when the connection zone is created. This assures that sufficient adhesive is present between the facing surfaces of the substrates so that a secure and complete bond can be obtained. The method includes removing the peripheral zone of adhesive from the periphery of the at least one substrate before adhering the substrates together.
When the adhesive is photocurable, at least one of the source or support substrates is transparent to light radiation to facilitate photocuring of the adhesive. In this embodiment, the treating step includes exposing the connection zone to light rays, and placing a mask between the light rays and the peripheral zone of adhesive to prevent photocuring of the adhesive in the peripheral zone. The mask substantially corresponds in size to the peripheral zone of adhesive so that it is not cured and can be easily removed. The adhesive also may be a thermoset material, and in this case, the treating step comprises heating the connection zone to set and cure the adhesive. A laser beam can be applied to locally heat the connection zone of adhesive for a sufficient amount of time to increase the adhesion properties of the adhesive.
In a preferred embodiment, the source substrate further includes a detachment zone between the transferable layer and source substrate to facilitate detachment of the transferable layer. This detachment zone can be a porous layer, a releasable bonding interface, or a stop layer that forms a barrier against chemical or mechanical attack. A convenient way to form the detachment zone is by implantation of atomic species to a predetermined depth beneath the surface of the source substrate. This can be achieved by the use of an ion beam implanter or a plasma implanter, using, for example, ions of hydrogen or rare gases. The detaching step generally comprises applying stress to the detachment zone in an amount sufficient to detach the transferable layer from the source substrate. The transferable layer and the source substrate each preferably comprise silicon, and further wherein the detachment zone includes a releasable bonding interface comprising silicon oxide.
Other characteristics and advantages of the invention become apparent from the following description of a preferred implementation of the invention. This description is made with reference to the accompanying drawings in which:
These figures are schematic diagrams in which the various layers and their thicknesses are not shown to scale and some have been deliberately enlarged for the purposes of clarification.
A novel method has now been developed for transferring a layer of a material, particularly an optionally processed semiconductor material, from a first or “source” substrate onto a second or “support” substrate.
The method of the invention includes removing a peripheral zone of adhesive while using a layer of adhesive in the process of assembling and transferring a layer of material from a source substrate onto a support substrate for the purpose of fabricating a composite substrate for use in applications in the fields of optics, opto-electronics, or electronics.
The term “processed layer” designates a layer of material that has undergone some or all of the steps of a technical method for forming electronic components.
The source substrate may include a detachment zone, wherein an interface is created between a layer to be transferred and the remainder of the substrate. The detachment zone may be defined by implanting atomic species on the substrate, providing a porous zone on the substrate, or providing a substrate with two layers bonded to each other by means of a bonding interface with controlled bonding energy so that the bonding is not definitive, or any combination thereof. Also included in accordance with the method is providing any substrate having a zone that is weaker than the substrate proper.
The source substrate is brought into contact with a support substrate, thereafter a layer to be transferred is detached from the remainder of the source substrate along the detachment zone and is transferred to the support substrate. The transferable layer may be detached along the detachment zone by, for example, application of a stress, such as mechanical or electrical, or any other type of stress known in the art.
The mechanical stresses for example and not limitation are generally tension and/or bending and/or shear stresses. Such stresses can be applied, for example, by a pulling rig, a blade such as a guillotine, or by a plurality of blades introduced to the side of the stack of layers, at the detachment zone 13, or by a jet of fluid (liquid or gas) applied laterally at the detachment zone. Application of the mechanical stresses encourages the propagation of a crack at the detachment zone 13 and subsequent detachment of the layer to be transferred.
One advantage of the present invention is to overcome those disadvantages, and in particular to improve methods for layer transfer, and to prevent excess adhesive deposited at the bonding interface between a source substrate and a support substrate from masking the attack edge of the detachment zone and thereby making it more difficult to detach the transferable layer.
To that end, the method of the invention includes removing a peripheral zone of excess adhesive when adhesive is used in the process of assembling and transferring a layer of material from a source substrate onto a support substrate for the purpose of fabricating a composite substrate for use in applications in the fields of electronics, optics, or opto-electronics. As mentioned above, the source substrate may include a detachment zone interposed between the layer of material to be transferred and the remainder of the source substrate.
According to the invention, the method generally comprises the steps of: depositing a layer of adhesive on the free surface referred to as the “front face” of the transferable layer of material or on the “front” face of the support substrate or on both front faces; applying the source substrate and the support substrate against each other, wherein the front face of the support substrate is applied against the front face of the transferable layer; treating a connection zone of the adhesive layer, wherein the connection zone is defined by adhesive which extends facing the front face of the transferable layer, and the treating step increases its mechanical holding properties; detaching the transferable layer from the remainder of the source substrate along the detachment zone; and removing a peripheral zone of excess adhesive situated at the periphery of the connection zone, or any of the substrates, wherein the removing step is optionally performed on one or more occasions between the applying step and the reacting step, or between the reacting step and the detaching step, or after the removing step, and possibly if it is performed on a plurality of occasions, in part between steps the depositing step and the applying step.
In accordance with the invention, the adhesive includes a photocurable adhesive or alternatively a thermosetting adhesive. In which the adhesive is photocurable on being exposed to light radiation, Preferably if a photocurable adhesive is utilized, then at least one of the substrates i.e., the support substrate or the source substrate, is transparent to the light radiation, and preferably the reacting step comprises causing exclusively the connection zone of the adhesive layer to be cured from the rear face of the source substrate or from the rear face of the support substrate by being exposed to light rays through a mask for protecting from exposure the zone of the layer of adhesive that extends at the periphery of the connection zone.
Alternatively, if the adhesive is thermosetting, preferably the treating or reacting step causes only the connection zone of adhesive to be set by heating. For example by using localized heating means such as a laser beam, and then returning to a lower temperature.
The transferable layer preferably includes at least a portion of an electronic or an opto-electronic component.
The detachment zone on the source substrate may be defined by a number of methods including but not limited to creating a zone of weakness formed by for example, implanting atomic species or alternatively, formed by a porous layer. As another example, the detachment zone may be formed by a releasable bonding interface. Another alternative is the detachment zone is a stop layer comprising a barrier to chemical and/or mechanical attack.
The transferable layer and the remaining the source substrate are both made of silicon, and the releasable bonding interface is within or at the surface of a layer of silicon oxide.
In the remainder of the description, the various substrates described are considered to be in the shape of a disk or a cylinder since that is the shape most frequently encountered. However, that feature is not limiting and the substrates could have other shapes.
The invention relates to a method for transferring a transferable layer of material 41, derived from a source substrate 4, onto a support substrate 5. For example, such transferring of the transferable layer of material onto a support substrate may be for the fabrication of a composite substrate for applications in the fields of electronics, optics, and opto-electronics (see
In the remainder of the description and claims, the terms “source substrate” 4 and “support substrate” 5 should be interpreted as encompassing both a singular substrate of a given material and a stack of layers of materials which may be of different kinds.
The source substrate 4 of the invention comprises a side face 45, which may be but not necessarily cylindrical, a front face 43 and a rear face 44, opposite to the front face. The source substrate further comprises an internal zone 40 termed the “detachment zone”, which delineates the transferable layer 41 of material to be transferred, from the remainder 42 of the source substrate.
The layer 41 of material to be transferred is located beside the front face 43 of the source substrate. In accordance with the invention, the transferable layer may comprise all or part of an electronic or opto-electronic component, for example a component known as a microelectronic mechanical system (MEMS) or a micro-opto-electronic mechanical system (MOEMS).
The term “detachment zone” generally means a zone of the source substrate 4 along in which the two layers situated on either side thereof, i.e., the transferable layer 41 and the remainder of the source substrate 42, will subsequently detach more easily from each other, particularly on the application of a stress.
The detachment zone 40 generally comprises either a zone of weakness (
When the zone of weakness 401 is obtained by implanting atomic species within the source substrate 4, the transferable layer 41 material and the remainder of the substrate 42 material may be the same material or different materials. For example, the transferable layer 41 may comprise one or more layers obtained by epitaxial growth. Alternatively, the transferable layer may comprise a buffer layer, likewise obtained by epitaxial growth. The skilled artisan is aware of how to obtain such layers.
The detachment zone defined by the implantation of atomic species is preferably carried out on the front face 43 of the layer 41 to be transferred, which is also the front face of the source substrate 4. The term “implanting atomic species” means any bombardment of atomic, molecular, or ionic species that is capable of introducing the species into a material at a certain depth with respect to the bombarded surface 43, with a concentration maximum of the species in the vicinity of the certain depth, wherein the depth is determined by the implantation energy of the species.
Alternatively, atomic species can be implanted in the source substrate 4 using an ion beam implanter or a plasma immersion implanter, or other methods that are generally known in the art.
Preferably, the implantation is accomplished by ionic bombardment and preferably the implanted ionic species is hydrogen. However, other ionic species can advantageously be used alone or in combination with hydrogen, such as for example rare gases (e.g., helium). By way of example, reference can be made to the literature concerning the method known under the trade name SMART-CUT«.
The zone of weakness 401 can also be comprised of a porous layer obtained, for example, during one of the steps of the method known under the trade name ELTRAN« filed by Canon, described in particular in U.S. Pat. No. 6,100,166, the content of which is expressly incorporated herein by reference thereto.
In this case, the source substrate 4 comprises a stack of layers comprising at least one layer of material 41 obtained by epitaxial growth on a porous layer 401, which layer rests on the remainder 42 of the source substrate.
When the detachment zone 40 comprises a “releasable” bonding interface 402, the interface is interposed between the transferable layer 41 and the remainder 42 of the source substrate comprising one or more layers. The term “releasable” as used herein means that bonding is not definitive so that the layer 41 can subsequently be released from the remainder 42. In this regard, reference can, for example, be made to published application WO02/084722 which describes a release method, and the content of which is expressly incorporated herein by reference thereto.
In a manner similar to that described above for the source substrate 4, the support substrate 5 has a side face 55, which may be cylindrical, a front face 53, and a rear face 54. The support substrate 5 acts to hold the assembly together mechanically.
As shown in
The adhesive 6 is preferably a curable adhesive and the above-mentioned treatment comprises curing it the curable adhesive.
In one embodiment of the invention, the adhesive 6 is a photocurable adhesive, i.e. an adhesive suitable for curing and setting under the action of light radiation, for example ultraviolet (UV) radiation. By way of example, mention can be made of a UV adhesive such as the adhesive known under the name VITRALIT 6127N and sold by the supplier ELECO PRODUITS, or a so-called “negative” resin.
Curing is performed by exposure (arrows I) through a mask 7, preferably having an annular shape, and having an inside diameter corresponding at most to the diameter of the transferable layer 41. This inside diameter could equally be slightly smaller than the diameter of the layer 41. The mask 7 protects from exposure the zone 62 of the layer of adhesive 6 extending to the outer periphery of the transferable layer 41.
The mask 7 is placed substantially in the same plane as the rear face 54 of the support substrate 5. The width L of the section of the annular mask 7 should be not less than and is preferably greater than the thickness or width of the excess adhesive 60 on the side faces 45 and 55 of the two substrates.
The shape of the mask 7 is naturally adapted to the shape of the outer outline of the layer 41 to be transferred.
Exposure takes place from the rear face 54 of the support substrate 5, the substrate being transparent to light radiation of the kind suitable for curing the adhesive, and in particular ultraviolet radiation if the adhesive is UV-curable.
After exposure, only the connection zone 61 of the layer of adhesive 6 that extends facing the front face 43 of the transferable layer 41 is cured and set. Alternatively, the exposure could equally well be performed through the source substrate 4, providing that the source substrate is transparent to rays suitable for causing the adhesive 6 to react, in which case the mask 7 should be placed substantially in the same plane as the rear face 44 of the source substrate.
Thereafter, the mask 7 is withdrawn and the non-cured peripheral annular zone 62 of the adhesive 6 is removed (arrows E in
The transferable layer 41 is detached from the remainder 42 of the source substrate 4 along the detachment zone or zone of weakness 401. Such detachment may be achieved by for example applying stress of mechanical origin (see
For purpose of illustration and not limitation, the stress of mechanical origin may be traction stress and/or bending stress and/or shear stress and it may be applied, for example, by means of a pulling rig, or by a blade, such as a guillotine, inserted from the side face 45 of the source substrate 4 into the zone of weakness 401, or indeed by a jet of fluid (liquid or gas) applied laterally against the zone 401.
By way of example, reference can be made to U.S. Pat. No. 6,100,166 and published application WO01/04933, the content of which is expressly incorporated herein by reference thereto. These publications describe methods of detaching two layers one from the other, respectively by means of a jet of gas such as air and by means of a jet of liquid such as water.
Detachment could also be performed by other methods which can be used singly or in combination with one another or with mechanical detachment, namely applying stresses of electrical origin (applying an electrostatic or an electromagnetic field); or applying heat energy (radiation, convection, conduction, increasing pressure in microcavities), etc.
It should also be observed that the step of removing the peripheral zone 62 of the non-cured adhesive could equally well be performed as a single step or in a plurality of steps after the substrates 4 and 5 have been applied one against the other and prior to the step of exposing the adhesive through the mask 7, or on the contrary after the detachment step of
In this last case, detachment is possible since even if adhesive remains at the intersection between the detachment zone or zone of weakness 401 and the side face 45 of the source substrate, this adhesive 62 is not cured and it therefore does not impede access of a guillotine blade, for example, and it does not perform any mechanical holding function.
It should be observed that it would also be possible to remove a portion of the adhesive 6, e.g. a portion of adhesive which has flowed over the sides of the substrate, prior to applying the substrates 4 and 5 against each other.
The material comprising all or part of the source substrate 4 can be any material, in particular a semi-conductor material, suitable for use in applications in the optical, electronic, and opto-electronic fields. Purely by way of illustrative example, mention can be made of silicon; silicon germanium, germanium; silicon carbide (SiC), and III-V materials, i.e., compounds in which one of the elements comes from column IIIa of the periodic table of elements, and the other comes from column Va, e.g., gallium arsenide (AsGa) or indium phosphide (InP).
As mentioned above, exposure may takes place through the source substrate 4. If so, then the source substrate must be transparent to the rays used. For example, when using ultraviolet radiation, the source substrate may comprise for example, glass, fused silica, quartz, or a plastics material.
The support substrate 5 provides mechanical support. When exposure is performed through the support substrate, it is made of a material that is transparent to the rays.
In the example shown in
During the step of depositing the layer of adhesive 6 or the step of applying the support substrate 5 against the SOI type substrate 4, the excess adhesive 60 flows not only towards the side faces 45 and 55 of the substrates 4 and 5, but also over the peripheral zone ring 46 (
During the exposure step shown in
After exposure, and after the peripheral zone 62 of non-cured adhesive has been removed (see arrow E in
As for the method described above with reference to
In another embodiment of the method, the rear layer 42 is withdrawn by lapping and/or by chemical attack. The oxide layer 402 then acts as a stop layer for the lapping and/or as a selective barrier for chemical or chemical-mechanical attack. By way of example, tetramethyl hydroxylamine (TMAH) can be used for selectively etching a silicon layer 42 and not a silicon oxide layer 402.
In general, the method of the invention can be applied to a source substrate 4 presenting an intermediate layer having a surface or a volume that acts as a releasable bonding interface or as a stop barrier against chemical and/or mechanical attack.
In another aspect of the invention, the adhesive 6 is a thermosetting adhesive, such as but not limited to a wax or an epoxy adhesive.
Under such circumstances, the steps of the method described with reference to
By way of example, excess adhesive 60 is initially wiped off (
The adhesive 6 is cured by localized heating of the zone 61 of the layer of adhesive 6 that is situated facing the front face 43 of the layer 41 to be transferred, followed by cooling (return to ambient temperature).
Localized heating can be performed, for example, by scanning using a laser beam 8 from the rear face 54 of the support substrate 5 (see
The localized heating may also be implemented by heating the entire stack of layers while simultaneously cooling its sides so that their temperature does not rise enough to enable the zone 62 of the layer of adhesive to cure. The heating can also be performed using a lamp.
Detachment of the transferable layer (see
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US5374564 *||Sep 15, 1992||Dec 20, 1994||Commissariat A L'energie Atomique||Process for the production of thin semiconductor material films|
|US5391257||Dec 10, 1993||Feb 21, 1995||Rockwell International Corporation||Method of transferring a thin film to an alternate substrate|
|US5863830 *||Sep 18, 1995||Jan 26, 1999||Commissariat A L'energie Atomique||Process for the production of a structure having a thin semiconductor film on a substrate|
|US6177359||Jun 7, 1999||Jan 23, 2001||Agilent Technologies, Inc.||Method for detaching an epitaxial layer from one substrate and transferring it to another substrate|
|US6287891||Apr 5, 2000||Sep 11, 2001||Hrl Laboratories, Llc||Method for transferring semiconductor device layers to different substrates|
|US6316333 *||Jan 26, 1998||Nov 13, 2001||Commissariat A L'energie Atomique||Method for obtaining a thin film in particular semiconductor, comprising a protected ion zone and involving an ion implantation|
|US6335258 *||Nov 4, 1997||Jan 1, 2002||Commissariat A L'energie Atomique||Method for making a thin film on a support and resulting structure including an additional thinning stage before heat treatment causes micro-cavities to separate substrate element|
|US6376332||Feb 1, 2000||Apr 23, 2002||Canon Kabushiki Kaisha||Composite member and separating method therefor, bonded substrate stack and separating method therefor, transfer method for transfer layer, and SOI substrate manufacturing method|
|US6406636||Jun 2, 1999||Jun 18, 2002||Megasense, Inc.||Methods for wafer to wafer bonding using microstructures|
|US6448155||Jun 12, 2000||Sep 10, 2002||Canon Kabushiki Kaisha||Production method of semiconductor base material and production method of solar cell|
|US6465327 *||Jun 29, 2000||Oct 15, 2002||Commissariat A L'energie Atomique||Method for producing a thin membrane and resulting structure with membrane|
|US6534380 *||Jul 17, 1998||Mar 18, 2003||Denso Corporation||Semiconductor substrate and method of manufacturing the same|
|US6534382 *||Aug 8, 2000||Mar 18, 2003||Canon Kabushiki Kaisha||Process for producing semiconductor article|
|US6548338||Jan 17, 2001||Apr 15, 2003||International Business Machines Corp.||Integrated high-performance decoupling capacitor and heat sink|
|US6562648||Aug 23, 2000||May 13, 2003||Xerox Corporation||Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials|
|US6673694||Jan 2, 2002||Jan 6, 2004||The Charles Stark Draper Laboratory, Inc.||Method for microfabricating structures using silicon-on-insulator material|
|US6700631||Feb 23, 1999||Mar 2, 2004||Seiko Epson Corporation||Method of separating thin-film device, method of transferring thin-film device, thin-film device, active matrix substrate, and liquid crystal display device|
|US6727549||Feb 29, 2000||Apr 27, 2004||Intel Corporation||Method of delaminating a pre-fabricated transistor layer from a substrate for placement on another wafer|
|US6767763 *||Oct 27, 2000||Jul 27, 2004||Seiko Epson Corporation||Component mounting method and method of producing electro-optical device|
|US6809009 *||Feb 6, 2001||Oct 26, 2004||Commissariat A L'energie Atomique||Method of producing a thin layer of semiconductor material|
|US20010055854||Mar 29, 2001||Dec 27, 2001||Shoji Nishida||Process for producing semiconductor member, and process for producing solar cell|
|US20020042189||Sep 25, 2001||Apr 11, 2002||Kazuyasu Tanaka||Manufacturing method of semiconductor chip with adhesive agent|
|US20020081822||Feb 21, 2002||Jun 27, 2002||Kazutaka Yanagita||Composite member and separating method therefor, bonded substrate stack and separating method therefor, transfer method for transfer layer, and SOI substrate manufacturing method|
|US20020096717||Jan 25, 2001||Jul 25, 2002||International Business Machines Corporation||Transferable device-containing layer for silicon-on-insulator applications|
|US20020132451||May 13, 2002||Sep 19, 2002||Yutaka Akino||Semiconductor substrate and method of manufacturing the same|
|US20030234075||Jul 11, 2001||Dec 25, 2003||Bernard Aspar||Method for cutting a block of material and forming a thin film|
|EP0106566B1||Sep 21, 1983||Nov 15, 1989||Xerox Corporation||System and method for controlling a machine including a plurality of operating components|
|EP0977252A1||Jul 26, 1999||Feb 2, 2000||Commissariat A L'energie Atomique||Selective transfer of elements from one support to another support|
|EP1059663A2||Jun 7, 2000||Dec 13, 2000||Canon Kabushiki Kaisha||Process for producing a semiconductor thin film with a bonding and separating steps, solar cell fabrication and anodizing apparatus|
|FR2811807A1||Title not available|
|JPH03106052A||Title not available|
|JPH10320851A||Title not available|
|JPS62229849A||Title not available|
|WO2001004933A1||Jul 12, 2000||Jan 18, 2001||Commissariat A L'energie Atomique||Method for separating two elements and device therefor|
|WO2002005344A1||Jul 11, 2001||Jan 17, 2002||Commissariat A L'energie Atomique||Method for cutting a block of material and for forming a thin film|
|WO2003081664A2||Mar 21, 2003||Oct 2, 2003||Commissariat A L'energie Atomique||Method for transferring elements between substrates|
|1||S. Kodama et al., XP-00035156 "Variable Threshold A1GaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gated Gabricated Using the Wafer-Bonding Technique", vol. 241ga, p. 434-435 (1999).|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US7927975||Feb 4, 2009||Apr 19, 2011||Micron Technology, Inc.||Semiconductor material manufacture|
|US8114754||Sep 24, 2010||Feb 14, 2012||S.O.I.Tec Silicon On Insulator Technologies||Methods of fabricating semiconductor structures and devices using glass bonding layers, and semiconductor structures and devices formed by such methods|
|US8389385||Apr 18, 2011||Mar 5, 2013||Micron Technology, Inc.||Semiconductor material manufacture|
|US8431966||May 11, 2009||Apr 30, 2013||Nxp B.V.||Method of manufacturing a bipolar transistor semiconductor device and semiconductor devices obtained thereby|
|US8461014||Jan 4, 2012||Jun 11, 2013||Soitec||Methods of fabricating semiconductor structures and devices with strained semiconductor material|
|US8487295||Jan 4, 2012||Jul 16, 2013||Soitec||Semiconductor structures and devices including semiconductor material on a non-glassy bonding layer|
|US8524572||Oct 6, 2011||Sep 3, 2013||Micron Technology, Inc.||Methods of processing units comprising crystalline materials, and methods of forming semiconductor-on-insulator constructions|
|US8697228||May 3, 2010||Apr 15, 2014||Corning Incorporated||Carrier for glass substrates|
|US8765508||Jul 23, 2009||Jul 1, 2014||Soitec||Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters|
|US9481566||Jul 8, 2013||Nov 1, 2016||Soitec||Methods of forming semiconductor structures including MEMS devices and integrated circuits on opposing sides of substrates, and related structures and devices|
|US9793360||Jun 25, 2014||Oct 17, 2017||Soitec||Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters|
|US20110111194 *||May 3, 2010||May 12, 2011||Carre Alain R E||Carrier for glass substrates|
|US20110114965 *||Sep 24, 2010||May 19, 2011||S.O.I.Tec Silicon On Insulator Technologies||Methods of fabricating semiconductor structures and devices using glass bonding layers, and semiconductor structures and devices formed by such methods|
|US20110156212 *||Jul 23, 2009||Jun 30, 2011||S.O.I.Tec Silicon On Insulator Technologies||Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters|
|U.S. Classification||438/455, 257/E21.568, 438/459, 257/E21.57, 438/464|
|International Classification||H01L21/46, H01L21/30, C09J5/00, H01L21/762, B81C1/00|
|Cooperative Classification||H01L21/76254, C09J5/00, H01L21/76259, B81C1/0038|
|European Classification||B81C1/00D99, H01L21/762D8F, H01L21/762D8B, C09J5/00|
|Sep 7, 2004||AS||Assignment|
Owner name: COMMISSARIAT A L ENERGIE ATOMIQUE (CEA), FRANCE
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BRESSOT, SEVERINE;RAYSSAC, OLIVIER;ASPAR, BERNARD;REEL/FRAME:015109/0568;SIGNING DATES FROM 20040709 TO 20040831
Owner name: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES S.A.,
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BRESSOT, SEVERINE;RAYSSAC, OLIVIER;ASPAR, BERNARD;REEL/FRAME:015109/0568;SIGNING DATES FROM 20040709 TO 20040831
|Aug 29, 2006||CC||Certificate of correction|
|Sep 5, 2006||CC||Certificate of correction|
|Dec 8, 2009||FPAY||Fee payment|
Year of fee payment: 4
|Nov 25, 2013||FPAY||Fee payment|
Year of fee payment: 8