|Publication number||US7071532 B2|
|Application number||US 10/605,440|
|Publication date||Jul 4, 2006|
|Filing date||Sep 30, 2003|
|Priority date||Sep 30, 2003|
|Also published as||CN1856872A, CN100466219C, EP1668692A2, EP1668692A4, EP1668692B1, US7358148, US20050067673, US20060202302, WO2005034200A2, WO2005034200A3|
|Publication number||10605440, 605440, US 7071532 B2, US 7071532B2, US-B2-7071532, US7071532 B2, US7071532B2|
|Inventors||Robert M. Geffken, William T. Motsiff|
|Original Assignee||International Business Machines Corporation|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (16), Non-Patent Citations (1), Referenced by (32), Classifications (20), Legal Events (5)|
|External Links: USPTO, USPTO Assignment, Espacenet|
1. Field of the Invention
The present invention relates to semiconductor devices and, in particular, to an adjustable, self-aligned air gap dielectric for low capacitance wiring in semiconductor devices.
2. Description of Related Art
Because of continuing decreases in size of circuit components in semiconductor chips, there are a number of interconnect wiring challenges facing the technical community over the next few technology generations. Among these challenges is the problem of undesirable capacitance in dielectric materials between circuit wiring. One avenue being pursued to lower interconnect capacitance is by the use of porous dielectrics. However, because these materials generally have reduced mechanical strength and thermal conductivity, it is more difficult to build the chip and dissipate heat during chip operation. Another challenge in the next few technology generations is presented by the expectation that the resistivity of copper wiring will begin to rise as the wire line width starts to approach its electron mean free path. This resistivity rise is exacerbated by surface and interface roughness of the copper. Dual damascene trench and via sidewalls may also intersect the voids in adjacent porous dielectric areas and contribute to the copper resistivity rise.
An additional challenge expected by the 65 nm line width generation is that physical vapor deposition (PVD), or sputtered, barriers will need to be replaced with chemical vapor deposition (CVD) or atomic layer deposition (ALD) barriers to meet ongoing thickness reductions and improved conformality requirements. If the porous low k dielectric material used is an open cell type, i.e., with connected pores, then the CVD or ALD precursors can diffuse into the dielectric and degrade its low k characteristics. Also, depending upon the maximum pore size of the porous low k dielectric material, the thinner liners may not be able to provide continuous coverage to prevent copper diffusion into the adjacent dielectric material. For example, some current porous low k materials still have 200 Å max pore size when the barrier needs to be about 50 Å at the 65 nm technology node.
Bearing in mind the problems and deficiencies of the prior art, it is therefore an object of the present invention to provide a dielectric having low capacitance for use in a semiconductor device.
It is another object of the present invention to provide a low capacitance dielectric that does not provide problems with porosity as copper line widths decrease in semiconductor circuits.
A further object of the invention is to provide a low capacitance dielectric that does not contribute to rise of copper resistivity as copper line widths decrease in semiconductor circuits.
It is yet another object of the present invention to provide a low capacitance dielectric that is compatible with conductor liner deposition processes.
The above and other objects, which will be apparent to those skilled in art, are achieved in the present invention which is directed to an adjustable self aligned low capacitance integrated circuit air gap structure. In one aspect, the present invention provides a semiconductor device comprising a first interconnect adjacent a second interconnect on an interconnect level, spacers formed along adjacent sides of the first and second interconnects, and an air gap formed between the first and second interconnects. The air gap extends above an upper surface of at least one of the first and second interconnects and below a lower surface of at least one of the first and second interconnects, and the distance between the spacers defines the width of the air gap. The air gap may be self-aligned to the adjacent sides of the first and second interconnects.
The semiconductor device preferably further includes, beneath the at least one of the first and second interconnects, an etch stop layer positioned over an underlying via insulator level, such that the air gap extends below the lower surface of the at least one of the first and second interconnects by a distance corresponding to a thickness of the etch stop layer.
Preferably, the spacers adjacent the sides of the first and second interconnects comprise silicon dioxide or silicon nitride, the etch stop layer comprises silicon carbide, and the underlying via insulator level comprises silicon dioxide or fluorinated silicon dioxide.
The semiconductor device preferably includes at least one insulative layer above the interconnect level and the air gap, such that the air gap extends into the insulative layer. The at least one insulative layer above the interconnect level and the air gap may comprise silicon nitride or silicon carbon nitride as a capping layer for the interconnect and silicon dioxide or fluorinated silicon dioxide as an insulative layer above the capping layer.
The semiconductor device may further include silicon dioxide or silicon nitride hardmask spacers self-aligned to either side of an upper portion of the air gap, as well as an insulative layer above the interconnect level, the air gap and the hardmask spacers. The air gap extends between the hardmask spacers and upward into the insulative layer.
The first and second interconnects may be formed by a damascene or dual damascene process, and may comprise copper, aluminum, tungsten or gold. Over each of the first and second interconnects there may be a selective metal deposition layer comprising a selective tungsten layer or a selective cobalt tungsten phosphide layer.
The semiconductor device may further include, beneath one of the first and second interconnects, an etch stop layer positioned over at least one underlying via insulator level, and below the underlying via insulator, a second interconnect level. Between the at least one underlying via insulator level and the second interconnect level, there may be disposed a selective metal deposition layer comprising a selective tungsten layer or a selective cobalt tungsten phosphide layer.
In another aspect, the present invention provides a method for forming an air gap between a pair of interconnects on an interconnect level of a semiconductor device comprising depositing a plurality of insulative layers of a semiconductor device, depositing a first hardmask insulative layer over the plurality of insulative layers, and removing portions of the first hardmask insulative layer to expose regions of the uppermost of the plurality of insulative layers over which interconnects are to be formed, wherein the regions of over which interconnects are to be formed are spaced apart. The method then includes depositing a second hardmask insulator layer over the first hardmask layer and exposed regions of the uppermost of the plurality of insulative layers, and removing portions of the second hardmask insulative layer over the first hardmask insulative layer to expose regions of the uppermost of the plurality of insulative layers over which interconnects are to be formed. This leaves second hardmask spacers adjacent to the regions of the uppermost of the plurality of insulative layers over which interconnects are to be formed. The method further includes using the first hardmask insulative layer and second hardmask spacers to etch the at least one of the underlying plurality of insulative layers to form interconnect openings, depositing a conformal insulative layer to form spacers on sidewalls of the interconnect openings, and depositing conductive metal adjacent the conformal insulative layer spacers to form interconnects in the interconnect openings. The method then continues by etching portions of the first hardmask insulative layer and underlying plurality of insulative layers between the interconnects and conformal insulative layer spacers, and leaving second hardmask spacers adjacent to the interconnects and conformal insulative layer spacers, to form an air gap extending below at least one of the interconnects, and subsequently depositing at least one insulative layer over the air gap and over the interconnects and conformal insulative layer spacers to seal the air gap. Preferably, the air gap extends above the interconnects, into the at least one insulative layer.
The step of depositing plurality of insulative layers of a semiconductor device may comprise depositing a first insulative capping layer of a semiconductor device, depositing a second insulative layer over the first insulative capping layer, depositing a third insulative layer etch stop layer over the second insulative layer, and depositing a fourth insulative layer over the third insulative etch stop layer. In such case, the removing of portions of the first hardmask insulative layer exposes regions of the fourth insulative layer over which the interconnects are to be formed. This also results in etched portions of the first hardmask insulative layer, fourth insulative layer and third insulative etch stop layer between the interconnects and conformal insulative layer spacers, to leave the second hardmask spacers adjacent to the interconnects and conformal insulative layer spacers, and to form the air gap extending below at least one of the interconnects.
The at least one insulative layer over the interconnects may comprise a fifth insulative capping layer for the interconnect and a sixth insulative layer above the capping layer, such that the air gap extends completely through the fifth capping layer and into a portion of the sixth insulative layer.
The features of the invention believed to be novel and the elements characteristic of the invention are set forth with particularity in the appended claims. The figures are for illustration purposes only and are not drawn to scale. The invention itself, however, both as to organization and method of operation, may best be understood by reference to the detailed description which follows taken in conjunction with the accompanying drawings in which:
In describing the preferred embodiment of the present invention, reference will be made herein to
Next, a conformal deposition of a second insulator layer 60, e.g., SiO2 or Si3N4, is applied over the exposed layers and into via openings 52, 54, and trenches 56, 58 of the existing structure, as shown in
Conventional barrier-seed layer and copper deposition processes are used to fill the dual damascene structure, so that the trench and vias are first completely lined with a barrier (such as TaN/Ta) and seed layer 62, and then filled with copper 64, and then the excess material is removed by chemical mechanical polishing (CMP), as depicted in
In the structure of the semiconductor device depicted in
Another embodiment, shown in completion in
Thus, the present invention provides a self aligned and adjustable air gap dielectric to reduce capacitance between adjacent, closely spaced conductive wires or vias. The height of the air gap above and below the adjacent copper line can be selected to cut off fringing capacitance and increase the effective electrical resistance (k) of the structure. The preferred via dielectric employed is an oxide such as USG or FSG with relatively good mechanical properties and thermal conductivity. A sacrificial trench dielectric and etch stop layer may be used to create the air gap, and these may be made of higher thermal conductivity and mechanical strength materials. A block mask may be used so that only areas on the chip with minimum spaces and a need for low capacitance receives the air gap. This maximizes the thermal conductance and mechanical stability of the chip. Since the trench and via are defined by an oxide or nitride spacer, problems associated with liner/barrier precursors entering a porous, low-k dielectric are eliminated, as are issues of barrier integrity causing Cu contamination of the dielectric and issues of sidewall roughness causing Cu resistivity increase.
While the present invention has been particularly described, in conjunction with a specific preferred embodiment, it is evident that many alternatives, modifications and variations will be apparent to those skilled in the art in light of the foregoing description. It is therefore contemplated that the appended claims will embrace any such alternatives, modifications and variations as falling within the true scope and spirit of the present invention.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US5117276 *||Nov 8, 1990||May 26, 1992||Fairchild Camera And Instrument Corp.||High performance interconnect system for an integrated circuit|
|US5324683||Jun 2, 1993||Jun 28, 1994||Motorola, Inc.||Method of forming a semiconductor structure having an air region|
|US5510645 *||Jan 17, 1995||Apr 23, 1996||Motorola, Inc.||Semiconductor structure having an air region and method of forming the semiconductor structure|
|US6150232||Feb 5, 1999||Nov 21, 2000||Chartered Semiconductor Manufacturing Ltd.||Formation of low k dielectric|
|US6200900||Oct 8, 1999||Mar 13, 2001||National Semiconductor Corporation||Method for formation of an air gap in an integrated circuit architecture|
|US6211057 *||Sep 3, 1999||Apr 3, 2001||Taiwan Semiconductor Manufacturing Company||Method for manufacturing arch air gap in multilevel interconnection|
|US6281585||Nov 12, 1999||Aug 28, 2001||Philips Electronics North America Corporation||Air gap dielectric in self-aligned via structures|
|US6329279||Mar 24, 2000||Dec 11, 2001||United Microelectronics Corp.||Method of fabricating metal interconnect structure having outer air spacer|
|US6413852 *||Aug 31, 2000||Jul 2, 2002||International Business Machines Corporation||Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder material|
|US6423629||May 31, 2000||Jul 23, 2002||Kie Y. Ahn||Multilevel copper interconnects with low-k dielectrics and air gaps|
|US6472266||Jun 18, 2001||Oct 29, 2002||Taiwan Semiconductor Manufacturing Company||Method to reduce bit line capacitance in cub drams|
|US6545361 *||Apr 16, 2001||Apr 8, 2003||Matsushita Electric Industrial Co., Ltd.||Semiconductor device having multilevel interconnection structure and method for fabricating the same|
|US6838354 *||Dec 20, 2002||Jan 4, 2005||Freescale Semiconductor, Inc.||Method for forming a passivation layer for air gap formation|
|US20010023123||Dec 21, 2000||Sep 20, 2001||Kim Jin-Woong||Method for forming semiconductor device having low parasite capacitance using air gap and self-aligned contact plug|
|US20020127844||May 13, 2002||Sep 12, 2002||International Business Machines Corporation||Multilevel interconnect structure containing air gaps and method for making|
|US20040097065 *||Nov 15, 2002||May 20, 2004||Water Lur||Air gap for tungsten/aluminum plug applications|
|1||V. Arnal, J. Torres, P. Gayet, R. Gonella, P. Spinelli, M. Guillermet, J-P Reynard, GC. Verove; "Integration of a 3 Level CuSiO2 Air Gap Interconnect for Sub 0.1 micron DMOS Technologies;" IEEE, Jun. 2001, pp. 298-300.|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US7514793 *||Dec 4, 2006||Apr 7, 2009||Dongbu Electronics Co., Ltd.||Metal interconnection lines of semiconductor devices and methods of forming the same|
|US7602038 *||Dec 27, 2006||Oct 13, 2009||Shanghai Ic R&D Center||Damascene structure having a reduced permittivity and manufacturing method thereof|
|US8003516||Aug 26, 2009||Aug 23, 2011||International Business Machines Corporation||BEOL interconnect structures and related fabrication methods|
|US8163658||Aug 24, 2009||Apr 24, 2012||International Business Machines Corporation||Multiple patterning using improved patternable low-k dielectric materials|
|US8202783||Sep 29, 2009||Jun 19, 2012||International Business Machines Corporation||Patternable low-k dielectric interconnect structure with a graded cap layer and method of fabrication|
|US8241992||Aug 14, 2012||International Business Machines Corporation||Method for air gap interconnect integration using photo-patternable low k material|
|US8367540||Feb 5, 2013||International Business Machines Corporation||Interconnect structure including a modified photoresist as a permanent interconnect dielectric and method of fabricating same|
|US8373271||Feb 12, 2013||International Business Machines Corporation||Interconnect structure with an oxygen-doped SiC antireflective coating and method of fabrication|
|US8415248||May 17, 2012||Apr 9, 2013||International Business Machines Corporation||Self-aligned dual damascene BEOL structures with patternable low-k material and methods of forming same|
|US8461039||Jun 15, 2012||Jun 11, 2013||International Business Machines Corporation||Patternable low-K dielectric interconnect structure with a graded cap layer and method of fabrication|
|US8487411||Feb 28, 2012||Jul 16, 2013||International Business Machines Corporation||Multiple patterning using improved patternable low-κ dielectric materials|
|US8497203||Aug 13, 2010||Jul 30, 2013||International Business Machines Corporation||Semiconductor structures and methods of manufacture|
|US8519540||Jun 16, 2009||Aug 27, 2013||International Business Machines Corporation||Self-aligned dual damascene BEOL structures with patternable low- K material and methods of forming same|
|US8629561||Jul 3, 2012||Jan 14, 2014||International Business Machines Corporation||Air gap-containing interconnect structure having photo-patternable low k material|
|US8637395||Nov 16, 2009||Jan 28, 2014||International Business Machines Corporation||Methods for photo-patternable low-k (PPLK) integration with curing after pattern transfer|
|US8642252||Mar 10, 2010||Feb 4, 2014||International Business Machines Corporation||Methods for fabrication of an air gap-containing interconnect structure|
|US8659115||Jun 17, 2009||Feb 25, 2014||International Business Machines Corporation||Airgap-containing interconnect structure with improved patternable low-K material and method of fabricating|
|US8753979 *||Mar 15, 2013||Jun 17, 2014||International Business Machines Corporation||Hybrid interconnect structure for performance improvement and reliability enhancement|
|US8754526 *||Mar 15, 2013||Jun 17, 2014||International Business Machines Corporation||Hybrid interconnect structure for performance improvement and reliability enhancement|
|US8796854 *||Mar 15, 2013||Aug 5, 2014||International Business Machines Corporation||Hybrid interconnect structure for performance improvement and reliability enhancement|
|US8822137||Aug 3, 2011||Sep 2, 2014||International Business Machines Corporation||Self-aligned fine pitch permanent on-chip interconnect structures and method of fabrication|
|US8890318||Apr 15, 2011||Nov 18, 2014||International Business Machines Corporation||Middle of line structures|
|US8896120||Apr 27, 2010||Nov 25, 2014||International Business Machines Corporation||Structures and methods for air gap integration|
|US8900988||Apr 15, 2011||Dec 2, 2014||International Business Machines Corporation||Method for forming self-aligned airgap interconnect structures|
|US8916936||Jan 28, 2013||Dec 23, 2014||Samsung Electronics Co., Ltd.||Transistor structure of a semiconductor device|
|US8952539||Jan 16, 2014||Feb 10, 2015||International Business Machines Corporation||Methods for fabrication of an air gap-containing interconnect structure|
|US9054160||Apr 15, 2011||Jun 9, 2015||International Business Machines Corporation||Interconnect structure and method for fabricating on-chip interconnect structures by image reversal|
|US9059249||Sep 1, 2012||Jun 16, 2015||International Business Machines Corporation||Interconnect structures containing a photo-patternable low-k dielectric with a curved sidewall surface|
|US20090181537 *||Mar 26, 2009||Jul 16, 2009||Advanced Micro Devices, Inc.||Semiconductor structure comprising an electrical connection and method of forming the same|
|US20130221529 *||Mar 15, 2013||Aug 29, 2013||International Business Machines Corporation||Hybrid interconnect structure for performance improvement and reliability enhancement|
|US20130228925 *||Mar 15, 2013||Sep 5, 2013||International Business Machines Corporation||Hybrid interconnect structure for performance improvement and reliability enhancement|
|US20130230983 *||Mar 15, 2013||Sep 5, 2013||International Business Machines Corporation||Hybrid interconnect structure for performance improvement and reliability enhancement|
|U.S. Classification||257/522, 257/E21.581, 257/E23.144, 257/758, 257/E21.579, 438/619|
|International Classification||H01L29/00, H01L23/532, H01L23/522, H01L21/768|
|Cooperative Classification||H01L21/76831, H01L23/5222, H01L21/76811, H01L2924/0002, H01L21/7682, H01L23/53295|
|European Classification||H01L21/768B2D6, H01L21/768B10B, H01L21/768B6, H01L23/522C|
|Sep 30, 2003||AS||Assignment|
Owner name: INTERNATIONAL BUSINESS MACHINES CORPORATION, NEW Y
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:GEFFKEN, ROBERT M.;WILLIAM, T. MOTSIFF;REEL/FRAME:014010/0399
Effective date: 20030929
|Oct 21, 2009||FPAY||Fee payment|
Year of fee payment: 4
|Feb 14, 2014||REMI||Maintenance fee reminder mailed|
|Apr 11, 2014||SULP||Surcharge for late payment|
Year of fee payment: 7
|Apr 11, 2014||FPAY||Fee payment|
Year of fee payment: 8