|Publication number||US7086147 B2|
|Application number||US 10/768,836|
|Publication date||Aug 8, 2006|
|Filing date||Jan 29, 2004|
|Priority date||Apr 30, 2001|
|Also published as||US6686664, US7703199, US20020158110, US20040183094, US20060208030|
|Publication number||10768836, 768836, US 7086147 B2, US 7086147B2, US-B2-7086147, US7086147 B2, US7086147B2|
|Inventors||David Vincent Caletka, Krishna Darbha, Donald W. Henderson, Lawrence P. Lehman, George Henry Thiel|
|Original Assignee||International Business Machines Corporation|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (9), Referenced by (30), Classifications (77), Legal Events (3)|
|External Links: USPTO, USPTO Assignment, Espacenet|
This application is a divisional application of application Ser. No. 09/845,448, now U.S. Pat. No. 6,686,664, filed Apr. 30, 2001.
1. Field of the Invention
The present invention relates to methods and structures for attaching a semiconductor chip or chip carrier to a substrate and, more particularly, to methods and structures for attaching a semiconductor chip or chip carrier to a substrate using solder ball technology.
2. Background and Related Art
In the fabrication of electronic devices as, for example, during ball attach or card attach, low melt C4 (controlled collapsed chip connection) solder balls on a chip carrier will reach their melting temperature and become liquid. Typically, for solder with a high tin content, the volume expansion associated with this phase change can range between 3 and 6%. If the C4 solder balls have been encapsulated prior to this volume change, as is typically the case, the volume expansion is constrained and the resulting pressure may result in the squeezing of this expanding volume of liquid into voids present in the surrounding underfill and its associated interfaces. This volume expansion of solder may also result in opening any weak interfaces, like underfill to chip passivation (for example polyimide) or underfill to solder mask interfaces. It is clear that the effect of such action could result in device failure.
In accordance with the present invention, structures are provided on the chip carrier to relieve pressure created by volume expanding solder upon heating and reflow. The structures are formed directly beneath the solder balls or bumps. The pressure relief structure may be in the form of microchannels or vias, an air cushioned diaphragm, or porous or compressible medium, like foam. The various structures act in a manner to accept or accommodate the expanding or excess volume of solder created during melting to thereby minimize or avoid the creation of pressure that may affect the region adjoining or surrounding the solder balls and the various material interfaces.
Accordingly, it is an object of the present invention to provide improved methods of making connections in electronic devices, to enhance overall reliability of the product.
It is another object of the present invention to provide structures which act to accommodate expanding solder when it changed to the liquid phase.
It is yet another object of the present invention to provide a method of attaching enclosed solder balls to connection pads by providing structures that accommodate expanding solder upon reflow.
It is a further object of the present invention to provide structures that relieve internal pressures in an enclosed electronic packaging environment caused by the expansion of solder when going from the solid to liquid phase.
It is yet a further object of the present invention to provide methods and structures that relieve pressure from solder reflow to thereby prevent damage to material interfaces in electronic devices.
These foregoing and other objects, features and advantages of the invention will be apparent from the following more particular description of a preferred embodiment of the invention, as illustrated in the accompanying drawings, wherein like reference members represent like parts of the invention.
With reference to
As further shown in
Whatever technique is used to make connections and encapsulate same, it is clear that when encapsulated there is little room for expansion of the solder balls or connections on subsequent single or multiple reflow. Subsequent reflow may occur, for example, when there is subsequent attachment to a PCB, where substrate 3 is a single or MCM, or subsequent attachment to a card. It can also occur during preconditioning. This problem is particularly severe for low melt single alloy solders. Typically, the volume expansion associated with high tin content solders in going to the liquid phase is 3 to 6%. However, the problem may exist for any of a variety of solder alloys that exhibit high volume expansion (e.g. >3%) on melting and that will encounter additional reflow (melt) temperatures during assembly or preconditioning of the package.
With such volume expansion in an encapsulated environment, the phase change instantaneously produces pressure that may result in the squeezing of the excess volume into voids present in the surrounding underfill or spacer, or produce a hydraulic force acting on the semiconductor chip thus opening or delaminating any weak interfaces, such as, the underfill-polyimide and underfill-solder mask interfaces. In addition, solder bridging, solder migration to interfaces and solder depletion within joints may occur. In this regard, it should be understood that the problems caused by solder volume expansion on reflow also exist with second and subsequent levels of solder interconnects, such as, BGA solder joints that have been underfilled or encapsulated. Accordingly, the teachings of the present invention to solve such problems are equally applicable to second and subsequent levels of packaging. The teachings help in mitigating the above related problems and provides for improving reliability of the electronic product.
In accordance with the present invention, several structural arrangements are provided to relieve pressure created by volume expansion of solder during reflow.
Representative dimensions for a 5% volume expansion of C4 solder balls might be A=140 μm, B=100 μm, C=45 μm and D=25 μm. Such dimensions would typically approximate the maximum volume of the microchannel that is needed to accommodate 5% volume expansion of solder. It should be understood, however, that, in general, the microchannel volume need not necessarily be large enough to accommodate the total volume expansion of the solder but rather the microchannel volume may be optimized to be large enough to sufficiently relieve pressure and limit stress build-up so that it is below the interfacial adhesion strength of the underfill. This, in turn, will depend on the type of underfill and passivation on the die and the choice of solder mask material on the laminate.
Microchannel or via 13, in
Employment of multiple microchannels or vias, as shown in
To ensure that the porous area under solder ball 5 is isolated from the porous areas under adjacent solder balls, isolation trench or region 33 may be formed. Isolation region 33 may be made by forming a trench in rigid layer 31 around the region beneath solder ball 5. The trench may then be backfilled with an isolating material, such as, polyimide or an oxide. The trench may be etched or laser profiled through layer 31 to substrate 3. Isolation region 33 prevents unwanted migration of the solder, absorbed during reflow, from interacting with the solder absorbed during reflow of an adjacent site. Rigid layer 31 may be made of a conventional ceramic material fabricated to exhibit voids. Layer 31 may be 75 μm to 100 μm thick.
Rather than form isolation region 33 in the porous rigid layer 31, the substrate, itself, may be used to form an isolation region. This may be achieved by masking a region of substrate 3 around the site of the solder ball that is to act as the isolation region, and then etching back the substrate inside the region. Thereafter the etched region is backfilled with the porous, rigid material.
It will be understood from the foregoing description that various modifications and changes may be made in the preferred embodiment of the present invention without departing from its true spirit. It is intended that this description is for purposes of illustration only and should not be construed in a limiting sense. The scope of this invention should be limited only by the language of the following claims.
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|U.S. Classification||29/840, 257/E23.068, 228/179.1, 257/E21.503, 29/855, 257/778, 29/843, 257/E23.077, 228/180.22|
|International Classification||H05K1/11, H05K3/28, H01L23/498, H05K3/34, H01L21/56, H01L23/48|
|Cooperative Classification||Y02P70/613, H01L2924/12042, H01L2224/81385, H01L2924/15787, H01L2224/0401, H01L2924/0002, Y10T29/49171, Y10T29/49149, Y10T29/49146, Y10T29/49144, H01L2224/05026, H01L2224/05551, H01L2224/05568, H01L2224/05017, H01L2224/05078, H05K2201/09036, H05K2201/0116, H05K2201/0382, H05K3/3436, H05K2201/0133, H05K2201/0969, H01L24/13, H01L2224/92125, H01L2224/81815, H01L2224/83102, H01L2224/32225, H05K2201/10977, H01L2924/01005, H01L2224/73203, H01L23/49811, H01L2224/73204, H01L2924/01033, H01L2224/16225, H01L24/81, H01L2924/01029, H05K2201/068, H05K2201/10674, H05K1/113, B23K3/0623, H01L23/49894, H01L23/49838, H01L2224/13099, H01L2924/014, H01L2224/8121, H01L2924/01006, H05K3/284, H01L24/16, H01L23/13, H05K2201/09509, B23K2201/40, H01L21/563, H01L2924/00013, H01L2224/131|
|European Classification||H01L24/16, H01L23/498G, H01L23/13, H01L24/10, B23K3/06B4, H01L21/56F, H05K3/34C4B, H01L23/498C, H01L23/498M8|
|Mar 15, 2010||REMI||Maintenance fee reminder mailed|
|Aug 8, 2010||LAPS||Lapse for failure to pay maintenance fees|
|Sep 28, 2010||FP||Expired due to failure to pay maintenance fee|
Effective date: 20100808