|Publication number||US7176513 B2|
|Application number||US 10/985,182|
|Publication date||Feb 13, 2007|
|Filing date||Nov 9, 2004|
|Priority date||Jun 21, 2002|
|Also published as||US6756625, US6797573, US6921935, US7034351, US20030234414, US20040052139, US20040219742, US20050082588, US20050082594|
|Publication number||10985182, 985182, US 7176513 B2, US 7176513B2, US-B2-7176513, US7176513 B2, US7176513B2|
|Inventors||Kris K. Brown|
|Original Assignee||Micron Technology, Inc.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (18), Referenced by (6), Classifications (24), Legal Events (3)|
|External Links: USPTO, USPTO Assignment, Espacenet|
This application is a divisional of U.S. patent application Ser. No. 10/855,705, filed May 26, 2004 now U.S. Pat. No. 6,921,935, which is a continuation of U.S. patent application Ser. No. 10/643,269, filed Aug. 18, 2003, now U.S. Pat. No. 6,797,573, which is divisional of U.S. patent application Ser. No. 10/177,228, filed Jun. 21, 2002, now U.S. Pat. No. 6,756,625.
The present invention relates in general to memory circuits, and more particularly, to dynamic random access memory cells and a method for forming the same.
Random access memory (“RAM”) cell densities have increased dramatically with each generation of new designs and have served as one of the principal technology drivers for ultra large scale integration (“ULSI”) in integrated circuit (“IC”) manufacturing. However, in order to accommodate continuing consumer demand for integrated circuits that perform the same or additional functions and yet have a reduced size as compared with available circuits, circuit designers continually search for ways to reduce the size of the memory arrays within these circuits without sacrificing array performance.
With respect to memory ICs, the area required for each memory cell in a memory array partially determines the capacity of a memory IC. This area is a function of the number of elements in each memory cell and the size of each of the elements. For example,
In some state-of-the-art memory devices, the memory cells for megabit DRAM have cell areas approaching 6F2. Although this is approximately a 25% improvement in memory cell area relative to conventional 8F2 memory cells, as previously described, a further reduction in memory cell size is still desirable. Therefore, there is a need for a compact memory cell structure and method for forming the same.
The present invention is directed to a semiconductor memory cell structure. The memory cell is formed on a surface of a substrate and includes an active region formed in the substrate, an epitaxial post formed on the surface of the substrate over the active region. The epitaxial post has at least one surface extending outwardly from the surface of the substrate and another surface opposite of the surface of the substrate. A vertical transistor is formed in the epitaxial post having a gate structure that is formed adjacent to at least a portion of all the outwardly extending surfaces of the epitaxial post. The memory cell further includes a memory cell capacitor formed on an exposed surface of the epitaxial post.
As is conventional in the field of integrated circuit representation, the lateral sizes and thicknesses of the various layers are not drawn to scale, and portions of the various layers may have been arbitrarily enlarged or reduced to improve drawing legibility.
Although embodiments of the present invention have been described as including container shaped memory cell capacitors 280, it will be appreciated that alternative capacitor structures can also be used as well without departing from the scope of the present invention. For example, conventional stacked capacitor structures electrically coupled to the epitaxial posts 220, 222 could be used in an alternative embodiment of the present invention. Alternatively, capacitors having a first capacitor plate with multiple polysilicon layers, that is, a “finned” capacitor, could also be used. Moreover, other modifications can be made to the memory cell capacitors 280 as well and still remain within the scope of the present invention. An example of such a modification includes forming memory cell capacitors 280 having a rough surface such as a hemispherical silicon grain (HSG) layer (not shown). Consequently, the present invention is not limited to the specific embodiments described herein.
It will be appreciated that the description provided herein is sufficient to enable those of ordinary skill in the art to practice the invention. Selecting specific process parameters, including temperature, doping levels, thicknesses, and the like, are well within the understanding of those ordinarily skilled in the art. Particular details such as these have been omitted from herein in order to avoid unnecessarily obscuring the present invention. It will be further appreciated that additional processing steps can be performed in fabricating the memory cells 200 without departing from the scope of the present invention. For example, in forming the isolation regions 202, an implant process can be performed to create a junction region below the isolation region 202 to minimize leakage currents between adjacent active regions. Another example of such a modification is performing an implant step prior to deposition of the conductive material 272 to create a highly doped region in the active region 206 to promote conductivity to the digit line contact.
The memory circuit 60 includes an address register 64, which receives an address from an ADDRESS bus. A control logic circuit 66 receives a clock (CLK) signal receives clock enable (CKE), chip select (CS), row address strobe (RAS), column address strobe (CAS), and write enable (WE) signals from the COMMAND bus, and communicates with the other circuits of the memory device 60. A row-address multiplexer 68 receives the address signal from the address register 64 and provides the row address to the row-address latch-and-decode circuits 70 a and 70 b for the memory bank 62 a or the memory bank 62 b, respectively. During read and write cycles, the row-address latch-and-decode circuits 70 a and 70 b activate the word lines of the addressed rows of memory cells in the memory banks 62 a and 62 b, respectively. Read/write circuits 72 a and 72 b read data from the addressed memory cells in the memory banks 62 a and 62 b, respectively, during a read cycle, and write data to the addressed memory cells during a write cycle. A column-address latch-and-decode circuit 74 receives the address from the address register 64 and provides the column address of the selected memory cells to the read/write circuits 72 a and 72 b. For clarity, the address register 64, the row-address multiplexer 68, the row-address latch-and-decode circuits 70 a and 70 b, and the column-address latch-and-decode circuit 74 can be collectively referred to as an address decoder.
A data input/output (I/O) circuit 76 includes a plurality of input buffers 78. During a write cycle, the buffers 78 receive and store data from the DATA bus, and the read/write circuits 72 a and 72 b provide the stored data to the memory banks 62 a and 62 b, respectively. The data I/O circuit 76 also includes a plurality of output drivers 80. During a read cycle, the read/write circuits 72 a and 72 b provide data from the memory banks 62 a and 62 b, respectively, to the drivers 80, which in turn provide this data to the DATA bus.
A refresh counter 82 stores the address of the row of memory cells to be refreshed either during a conventional auto-refresh mode or self-refresh mode. After the row is refreshed, a refresh controller 84 updates the address in the refresh counter 82, typically by either incrementing or decrementing, the contents of the refresh counter 82 by one. Although shown separately, the refresh controller 84 may be part of the control logic 66 in other embodiments of the memory device 60. The memory device 60 may also include an optional charge pump 86, which steps up the power-supply voltage VDD to a voltage VDDP. In one embodiment, the pump 86 generates VDDP approximately 1–1.5 V higher than VDD. The memory circuit 60 may also use VDDP to conventionally overdrive selected internal transistors.
From the foregoing it will be appreciated that, although specific embodiments of the invention have been described herein for purposes of illustration, various modifications may be made without deviating from the spirit and scope of the invention. For example, the memory cell 200 has been illustrated as having epitaxial posts with a rectangular or quadrilateral cross-sectional area. However, the epitaxial posts can be formed having a generally circular cross-sectional area or a generally polygonal cross-sectional area as well. Accordingly, the invention is not limited except as by the appended claims.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US4881105||Jun 13, 1988||Nov 14, 1989||International Business Machines Corporation||Integrated trench-transistor structure and fabrication process|
|US5158901||Sep 30, 1991||Oct 27, 1992||Motorola, Inc.||Field effect transistor having control and current electrodes positioned at a planar elevated surface and method of formation|
|US5497017||Jan 26, 1995||Mar 5, 1996||Micron Technology, Inc.||Dynamic random access memory array having a cross-point layout, tungsten digit lines buried in the substrate, and vertical access transistors|
|US5753555||Oct 24, 1996||May 19, 1998||Nec Corporation||Method for forming semiconductor device|
|US5945707||Apr 7, 1998||Aug 31, 1999||International Business Machines Corporation||DRAM cell with grooved transfer device|
|US5970352||Apr 23, 1998||Oct 19, 1999||Kabushiki Kaisha Toshiba||Field effect transistor having elevated source and drain regions and methods for manufacturing the same|
|US6097065||Mar 30, 1998||Aug 1, 2000||Micron Technology, Inc.||Circuits and methods for dual-gated transistors|
|US6100123||Jan 20, 1998||Aug 8, 2000||International Business Machines Corporation||Pillar CMOS structure|
|US6388282||Nov 24, 2000||May 14, 2002||Kabushiki Kaisha Toshiba||Semiconductor memory device and method of manufacture the same|
|US6477080||Aug 8, 2001||Nov 5, 2002||Micron Technology, Inc.||Circuits and methods for a static random access memory using vertical transistors|
|US6492662||Apr 16, 2001||Dec 10, 2002||Ibm Corporation||T-RAM structure having dual vertical devices and method for fabricating the same|
|US6504201||Aug 30, 2000||Jan 7, 2003||Micron Technology, Inc.||Memory cell having a vertical transistor with buried source/drain and dual gates|
|US6511884||Oct 9, 2001||Jan 28, 2003||Chartered Semiconductor Manufacturing Ltd.||Method to form and/or isolate vertical transistors|
|US6518112||Jul 6, 2001||Feb 11, 2003||International Business Machines Corporation||High performance, low power vertical integrated CMOS devices|
|US6570200||Dec 12, 2001||May 27, 2003||Samsung Electronics Co., Ltd.||Transistor structure using epitaxial layers and manufacturing method thereof|
|US6602748||Apr 15, 2002||Aug 5, 2003||Fujitsu Limited||Method for fabricating a semiconductor device|
|US6756625||Jun 21, 2002||Jun 29, 2004||Micron Technology, Inc.||Memory cell and method for forming the same|
|US7034351 *||Nov 9, 2004||Apr 25, 2006||Micron Technology, Inc.||Memory cell and method for forming the same|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US7518174||Jan 2, 2008||Apr 14, 2009||Micron Technology, Inc.||Memory cell and method for forming the same|
|US7825452 *||Jul 27, 2007||Nov 2, 2010||Micron Technology, Inc.||Memory cell with buried digit line|
|US8183615||Oct 29, 2010||May 22, 2012||Micron Technology, Inc.||Memory cell with a vertically oriented transistor coupled to a digit line and method of forming the same|
|US20080017905 *||Jul 27, 2007||Jan 24, 2008||Micron Technology, Inc.||Memory cell with buried digit line|
|US20080099816 *||Jan 2, 2008||May 1, 2008||Brown Kris K||Memory cell and method for forming the same|
|US20110042734 *||Oct 29, 2010||Feb 24, 2011||Micron Technology, Inc.||Memory cell with a vertically oriented transistor coupled to a digit line and method of forming the same|
|U.S. Classification||257/300, 257/407, 257/E21.41, 257/412|
|International Classification||H01L21/8242, H01L21/02, H01L21/336, H01L29/94, H01L31/119, H01L29/76, H01L27/108|
|Cooperative Classification||H01L29/6653, H01L29/66553, H01L27/10873, H01L29/66666, H01L28/90, H01L27/10852, H01L27/10808|
|European Classification||H01L29/66M6T6F9, H01L29/66M6T6F12, H01L29/66M6T6F6, H01L27/108F2, H01L27/108M4B2, H01L27/108M4C|
|Jul 14, 2010||FPAY||Fee payment|
Year of fee payment: 4
|Dec 16, 2011||AS||Assignment|
Effective date: 20111214
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MICRON;REEL/FRAME:027396/0123
Owner name: NANYA, TAIWAN
|Aug 13, 2014||FPAY||Fee payment|
Year of fee payment: 8