|Publication number||US7305935 B1|
|Application number||US 10/925,499|
|Publication date||Dec 11, 2007|
|Filing date||Aug 25, 2004|
|Priority date||Aug 25, 2004|
|Publication number||10925499, 925499, US 7305935 B1, US 7305935B1, US-B1-7305935, US7305935 B1, US7305935B1|
|Original Assignee||The United States Of America As Represented By The Administration Of Nasa|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (20), Non-Patent Citations (1), Referenced by (6), Classifications (25), Legal Events (5)|
|External Links: USPTO, USPTO Assignment, Espacenet|
The invention described herein was made by an employee of the United States Government and may be manufactured and used by or for the Government for Government purposes without the payment of any royalties thereon or therefore.
The present invention relates to a plasma producing microwave antennas used for producing plasmas for use in ion thrusters, ion etching of surfaces, the embedding of ions within surfaces, production of electrons, and the like.
Plasmas consist of gaseous complexes in which atoms or molecules are dissociated into free electrons, ions, free radicals, and neutral particles; stars, for instance, consist predominantly of plasmas. On earth, plasma occurs naturally in lightning bolts, flames, and similar phenomena, or may be manufactured by heating a gas to high temperatures, or by applying a strong electric field to a gas. Plasmas are called the “fourth state of matter” because their physical properties make them physically distinct from solids, liquids, and gases.
Ions, as well as electrons, from various kinds of plasma generators can be used in such industrial processes as etching, ashing (as with photoresist material or surfaces being chemically machined), deposition of materials such as oxides or nitrides, oxidation, sputtering, polymerization, ion implantation within surfaces and in high-specific-impulse thrusters for use on satellites and other space vehicles.
Drawbacks of existing direct current (DC) ion sources include erosion, short service life of plasma generators, and plasma non-uniformity. Erosion derives from the impacting of high-speed ions on the surfaces of the machines that produce plasmas. For example, DC ion sources eject erosion products into the discharge plasma as a consequence of the fact that the discharge cathode is constantly being bombarded by the ions of the plasma in which it is immersed. This is an undesirable attribute from the standpoint of materials processing, as contamination of the work product can result. DC ion sources (and DC electron sources) have limited lifetimes due to being constantly subjected to erosion, and the cathodes that drive such plasma sources typically, over time, lose their ability to emit electrons so that eventually the cathodes fail. Typically, DC ion sources (ion thrusters in particular) utilize a single on axis discharge cathode. This arrangement gives rise to peaked, non-uniform plasma density profiles at the exit plane. Such non-uniform profiles give rise to non-uniform wear of the ion extraction grids—thereby leading to failure by structural degradation or by electron backstreaming.
Disk shaped multi-slotted antenna designs have been used in the past to circumvent issues described above. These sources require, however, an insulating window for operation, i.e., for impedance matching and shielding. The insulating window, typically boron nitride makes such devices impractical for ion sources or ion thruster applications because the insulating window will acquire a coating over time due to wear of the extraction grids. The coating will ultimately prevent microwaves form penetrating the source and thus plasma production will cease.
Prior art U.S. patents include U.S. Pat. No. 6,376,796 issued to Sato, et al entitled “Plasma processing system”; U.S. Pat. No. 6,190,496 issued to DeOrnellas, et al entitled “Plasma etch reactor and method for emerging films”; U.S. Pat. No. 6,033,481 issued to Yokogawa et al entitled “Plasma processing”; and U.S. Pat. No. 5,891,252 issued to Yokogawa et al entitled “Plasma processing apparatus.”
Sato, et al., U.S. Pat. No. 6,376,796 relates to a plasma processing system utilizing an antenna supplying high power generating high density plasma for performing processing on the surface of a substrate. A slotted antenna supplies high frequency power. Sato has a disk-shaped conductor that performs impedance matching. A magnetic circuit using permanent magnets is provided close to the electromagnetic wave emitter.
DeOrnellas U.S. Pat. No. 6,190,496 claims a plasma etch reactor with a reactor chamber, two electrodes and power sources connected to the electrodes generate power at two different frequencies. A third electrode generates power at a low frequency. Magnetic confinement is utilized with the reactor chamber. The reactor is useful in etching the new class of films used in chip designs. The magnets can be permanent or electromagnets and are designed to concentrate the plasma which can reduce erosion to the electrodes and also protect the process chamber parts.
Yokogawa U.S. Pat. No. 6,033,481 discusses generation of uniform plasma over a large range for use in etching processing. High density plasma is generated in a vacuum vessel housing an electron cyclotron resonance device. An electromagnetic wave is radiated from a planar conductive plate arranged opposite to the surface of the sample being processed inside the vacuum vessel. The same patent also claims an electromagnetic wave radiation antenna consisting of strip-lines provided on an earth electrode opposite the processed sample.
Yokogawa U.S. Pat. No. 5,891,252 is similar to U.S. Pat. No. 6,033,481 and is cited because it too discusses antennas with a plasma source. The earlier patent provides a plasma processing apparatus which does not require large power consumption. It also discusses supplying an electromagnetic wave from a power source to a conductive plate in a planar shape and radiating the electromagnetic wave for forming plasma from the conductive plate.
The above-cited references do not disclose the particular combination of innovative features of present invention described hereinbelow. In Sato, et al., the design of the plasma generation antenna is the main part of the invention.
It is an aspect of the present invention to provide methods and apparatus as defined in one or more of the appended claims and, as such, having the capability of accomplishing one or more of the following subsidiary aspects.
In accordance with the foregoing, one aspect of the present electrodeless slotted antenna rectangular waveguide plasma source invention is to provide a plasma source that produces a distributed, uniform plasma density profile such as to make the plasma applicable for plasma processing applications.
Another aspect is to provide a plasma source that can be operated with permanent magnets only.
Another aspect of the present invention is to provide a plasma source that is capable of operating at low flow rates and low background pressures.
Another aspect of the present invention is to provide a plasma source that can be used as either an electron or an ion source.
Another aspect of the present invention is to provide a plasma source in which the plasma current densities produced at the exit plane of the device are large so as to yield high etch rates or material deposition rates.
Yet another aspect of the present invention is to provide a plasma source that does not require a microwave window.
And a final aspect of the present invention is to provide a microwave antenna approach that is straightforward to scale up to larger areas and higher powers.
The present invention is a slotted antenna waveguide plasma source that uses microwaves to drive electron cyclotron resonance (ECR) so as to create a plasma. The slotted antenna waveguide source is comprised of a waveguide having a primary axis; parallel mounted, spaced-apart bar magnets disposed along one outer wall of the waveguide; a series of matched radiating slot pairs machined in one wall of the waveguide between the externally mounted, parallel, spaced-apart, magnets; and a discharge chamber equipped with a first plasma containment ring of magnets disposed around a central perimeter of the discharge chamber and a second plasma containment/secondary ECR production ring of magnets disposed around a far perimeter of the discharge chamber. The parallel mounted, spaced-apart magnets are permanent magnets, and their magnetic poles are oriented in the same direction. All magnets are permanent magnets. The parallel, spaced-apart magnets comprise three magnets. The slots comprising the series of matched radiating slot pairs are arranged in two mutually parallel linear rows of uniformly spaced slots, each row being parallel to the primary axis or the waveguide. Each slot of each slot pair is offset from its mate in a direction parallel to the major axis of the waveguide. The uniformly spaced slots are spaced according to wavelength of microwaves being used. And each of the slots comprising the series of matched radiating slot pairs has rounded ends.
The present invention is a slotted antenna waveguide plasma source that uses microwaves to drive electron cyclotron resonance (ECR) so as to create a plasma. The slotted antenna waveguide source is comprised of a waveguide having a primary axis; parallel, spaced-apart bar magnets disposed along one outer wall of the waveguide; a single row of radiating slots machined in one wall of the waveguide between the externally mounted, parallel, spaced-apart, magnets; and a discharge chamber equipped with a first plasma containment ring of magnets disposed around a central perimeter of the discharge chamber and a second plasma containment/secondary ECR production ring of magnets disposed around a far perimeter of the discharge chamber.
The present invention is a method for producing a plasma by means of electron cyclotron resonance (ECR), the method being characterized by the steps of acquiring a microwave waveguide, determining its primary axis of the microwave waveguide and then modifying the microwave waveguide by machining a series of matched radiating slot pairs in one wall of the waveguide at regular intervals in a direction parallel to the primary axis of the waveguide; mounting parallel, spaced-apart magnets on one external wall of the waveguide in parallel alignment with the waveguide's primary axis; and mating to the waveguide a discharge chamber having an open side away from the waveguide, and then distributing a first plasma containment ring of magnets around a central perimeter of the discharge chamber, and distributing a second plasma containment/secondary ECR production ring of magnets around a far perimeter of the discharge chamber followed by situating the mated waveguide and discharge chamber inside of an evacuated enclosure, supplying a material to be ionized into a plasma into the enclosure and finally radiating microwaves into an opening at one end of the waveguide. The waveguide's physical dimensions and characteristics are matched with microwave wavelength to be used. The poles of the parallel, spaced apart magnets are oriented in the same direction, and all the magnets are permanent magnets. Each slot within each matched radiating slot pair is offset from one another in a direction parallel to the major axis of the waveguide. The slots are all machined so as to have rounded ends.
The structure, operation, and advantages of the present invention will become apparent upon consideration of the description hereinbelow taken in conjunction with the accompanying FIGURES. The figures are intended to be illustrative, not limiting. Certain elements in some of the FIGURES may be omitted, or illustrated not-to-scale, for illustrative clarity. The cross-sectional views may be in the form of “slices”, or “near-sighted” cross-sectional views, omitting certain background lines which would otherwise be visible in a “true” cross-sectional view, for illustrative clarity.
Although the invention is generally described in the context of these preferred embodiments, it should be understood that the FIGURES are not intended to limit the spirit and scope of the invention to these particular embodiments.
Certain elements in selected ones of the FIGURES may be illustrated not-to-scale, for illustrative clarity. The cross-sectional views, if any, presented herein may be in the form of “slices”, or “near-sighted” cross-sectional views, omitting certain background lines which would otherwise be visible in a true cross-sectional view, for illustrative clarity.
Elements of the FIGURES can be numbered such that similar (including identical) elements may be referred to with similar numbers in a single FIGURE. For example, each of a plurality of elements collectively referred to as 199 may be referred to individually as 199 a, 199 b, 199 c, etc. Or, related but modified elements may have the same number but are distinguished by primes. For example, 109, 109′, and 109″ are three different elements which are similar or related in some way, but have significant modifications, e.g., a tire 109 having a static imbalance versus a different tire 109′ of the same design, but having a couple imbalance. Such relationships, if any, between similar elements in the same or different figures will become apparent throughout the specification, including, if applicable, in the claims and abstract.
The structure, operation, and advantages of the present preferred embodiment of the invention will become further apparent upon consideration of the following description taken in conjunction with the accompanying FIGURES, wherein:
Substrate refers to a material or workpiece that is to be etched by exposure to a plasma.
Contactor refers to a virtual “grounding rod” which serves to control charge buildup by generating a conductive plasma bridge so that excess charge can be discharged to the ambient potential.
Electrodeless electron cyclotron resonance (ECR) is the means employed in this slotted antenna waveguide plasma source invention. ECR is a commercially used technology primarily in the fields of high energy research and, at lower power, semiconductor wafer processing equipment for etching and material deposition.
This present invention has two factors that make it superior to any commercial ECR systems on the market.
It is electrodeless, and permanent magnets are used to generate the plasma as opposed to present-day commercial systems that use electromagnets and electrodes that are consumable. In wafer processing the electrode slowly erodes and results in some level of contamination on the wafer surface. Contaminated wafer areas are waste, thereby reducing processing throughput, efficiency, and yield. The technology eliminates the electrode and the subsequent contamination resulting in improved processing.
The configuration of the magnets above the slotted grid allows maintenance of a relatively constant power/slot ratio. Long bar-like spaced-apart parallel magnets above the slots create a series of channels. When a higher power design is required, slots are added to the grid in the channels and the input power can be increased. A full scale prototype has been operated with performance verified.
The purpose of this slotted antenna source invention is to electrodelessly generate uniform discharge plasma at reduced input powers and gas flow rates. This slotted antenna plasma source invention provides a source of ions as well as electrons in a completely electrodeless manner using ECR. It features a series of matched radiating slot pairs that are distributed at regular intervals along the length of the waveguide portion of this plasma source. This arrangement allows the plasma production to take place in a distributed fashion thereby giving rise to a uniform plasma profile. A uniform plasma profile is necessary for ion (electron) extraction optics uniformity. The slotted antenna design makes the approach scalable to much high powers. All that is required is the adding of additional matched radiating slot pairs along the length of the discharge chamber. In order for the power/slot ratio to remain constant, input microwave power must increase accordingly. Another key attribute of the slotted antenna approach described here is that it is designed so that an insulating window is not necessary. This allows the slotted antenna source to be used for ion beam and electron beam applications. The source is designed so that ECR takes place above each slot and the magnetic field at each slot provides a strong gradient to prevent plasmas backflow. The windowless nature of this invention gives it a distinct advantage over other slotted plasma source geometries which can only be used in non ion beam, non-deposition type plasma applications.
This invention produces high current densities and uniform discharge plasma. Additionally, it does not require cumbersome, energy-hungry electromagnets. The source has operated at 2.45 GHz but can be designed to operate at virtually any microwave frequency (915 MHZ to 6 GHz is a typical practical range of operation). Also, it does not require a microwave window which would otherwise be a contamination source. For ion beam applications this window could also be coated thereby preventing microwaves from coupling into the source and producing a discharge plasma.
The present electrodeless slotted antenna plasma source invention provides a uniform plasma density profile. Being an electrodeless plasma source, it has a long service life. It operates on the principle of electron cyclotron resonance (ECR). It does not require an insulating window, allowing it to be used for ion beam and electron beam applications. Thus this slotted antenna plasma source invention produces high current densities and uniform discharge plasma. This electrodeless slotted antenna plasma source invention can operate at virtually any microwave frequency, a typical range being 915 MHz to 6 Ghz. It has the potential to be used for ion thruster applications on spacecraft, including satellites, or as a source for plasmas appropriate for use in materials processing. Moreover it does not require electromagnets, as it operates with permanent magnets.
The primary advantage of this invention is the use of a slotted waveguide and a rectangular discharge that permits direct scalability to larger areas and higher power generators. As a source of ions or electrons, it can be scaled up simply by adding slots to the waveguide antenna. It is somewhat analogous to the slotted antennas used in microwave communication technologies.
Referring now to
Referring now specifically to
Three permanent magnets 16 is the maximum number envisioned. In this case the slots 14 are bounded by lines of magnets 16 on either side. This configuration has been validated. It is possible to use only two magnet row 16 as well. This too has been validated, especially at the higher frequencies where the spacing between slots 14 is too small to place a magnet of adequate field strength between slots. Additionally, it has been found that this configuration tends to reduce the magnetic field between slots 14 thereby allowing case of diffusion of plasma from the slotted antenna region into the plasma volume. Again, this approach has found best utility at the higher frequencies where the required field strengths are large and can thus reduce diffusion of plasma from the ECR zone.
The purpose of the lines of permanent magnets 16 is to establish the necessary magnetic field in the region above the slot (i.e., outside of the waveguide 12) to ensure ECR. The magnets 16 also generate a field profile that prevents the backflow of plasma in the slot 14. In this respect, at least two and no more than three magnet rows are used.
It is possible to utilize a single row of slots 14, in which case only two permanent bar magnets 16 would be needed or required. The main requirement is that the slots 14 radiate in phase. In this regard, at most only two rows 17 a,17 b of alternating slots 14 can be utilized.
It is worth noting that the slots may not necessarily be uniformly spaced perpendicular to the waveguide centerline, but they must be uniformly spaced along the axis.
During operation of this slotted antenna invention, plasma forms in the region of the desired electron cyclotron resonance (ECR) takes place on magnetic contours of sufficient magnetic field strength that satisfies the conditions for ECR. I.e., plasma production takes place at locations (plasma production sites) that are volumes of space disposed just outside of the waveguide 12 around the edges and centered on the middle of each slot 14. During normal operation, the separate plasma productions sites associated with each slot 14 coalesce to become a single lines of plasma production that fill the channels 17 a and 17 b. That is to say, the series of matched radiating slot pairs are located below the plasma production regions or sites which are more or less ellipsoidal until they coalesce or merge into single long strips of plasma filling, respectively, the channels 17 a, 17 b.
The slots 14 are not rectangular, rather each of the slots 14 comprising the series of matched radiating slot pairs (shown as 13, 13′ and 13″ in
Waveguide sizes are standardized such that the waveguide's characteristics are matched with the wavelength of microwave radiation to be used. The waveguide 12 used with this invention is WR 159 for 5.85 GHz operation, or WR 340 for 2.45 GHz operation. For each size, there is a specific frequency range over which the waveguide will operate.
When the present invention is used in the applications described above in relation to the
A window, made of a dielectric material through which microwaves are emitted prior to producing plasmas, is used in some microwave plasma sources. No window is needed, used, or required in the present invention. And example of the use of such a dielectric window is taught in U.S. Pat. No. 6,376,796, to Sato, et al., who describe a disk-shaped multi-slotted antenna design.
In general, the function of the dielectric window is to aide in impedance matching of the microwaves from the waveguide to the vacuum. Additionally, the dielectric window can serve as a physical barrier to backflowing plasma which could potentially give rise to breakdowns and arcing that would disrupt microwave flow. In the present slotted antenna plasma source invention, the magnetic circuit in the near the waveguide slots allows for gas breakdown and well-matched plasma production downstream of the slots. The well-matched plasma produced as a consequence of the optimized magnetic circuit eliminates the need for dielectrics to aid in impedance matching. Additionally, the magnetic field profile at each slot prevents plasma from backflowing into the slots and causing breakdowns there. Additionally, the magnetic field at and inside the slots is not sufficient to produce ECR so no plasma production can take place in the waveguide. Finally, the use of multiple slots reduces the electric field at each slot and thereby minimizes slot arcing which could be caused by the presence of the plasma. This is how the dielectric window was eliminated.
The invention of Sato, et al., utilizes a dielectric window that is described in the second paragraph, column 7, of the patent. The window covers the antenna disk comprising a hypothetical plane from which the microwaves emerge from the dielectric disk (20). In contrast, and as noted supra, the slotted antenna source according to the present invention does not utilize a microwave window of any kind. The microwave excitation emerges from the slots in the waveguide itself. No dielectric is required for microwave transport or matching. It should be pointed out that the device in Sato's invention is subject to coatings which could extinguish the discharge if they are conductive. That is to say, the present waveguide plasma source invention is designed so that no microwave dielectric window is not needed, and since there is no window, the issue of window coatings is thereby eliminated. Window coatings can prevent microwave flow (if the coating is metallic) or effect matching (if the coating is dielectric). The present windowless slotted antenna design can be used to generate plasma for materials processing applications where there are condensable dielectric or metal vapors present, because there is no dielectric window to coat over or otherwise fail. The dense plasma generated by this approach can be used for ion or electron extraction. In this respect it can serve as either an ion or an electron source.
This invention as applications in the semiconductor manufacturing sector as well as the broader area of plasma processing. Because of the unique ease of scaling to larger areas, work piece size is not a factor. The large uniform plasma produced by the above described source makes ideal for the processing of silicon wafers, implanting ions in various materials or controlling the chemistry of a deposition plasma. The scalable rectangular discharge shape is easily adaptable to commercial processes in semiconductor manufacturing and larger scale ion deposition processes that are currently limited to comparatively small work pieces. Erosion products are virtually eliminated as the plasma production is a purely electrodeless process. Manufacturers of semiconductor products either develop or utilize plasma sources for silicon wafer processing, implantation, or deposition processing.
This plasma source invention could also be used for long life ion thruster applications on commercial satellites. Additionally, satellite manufacturers may be interested in the source for satellite charge control. The slotted antenna source could also serve as a plasma contactor for such applications. Also, since no windows are used or required, the device can operate in environments of condensable metal vapors.
Although the invention has been shown and described with respect to a certain preferred embodiment or embodiments, certain equivalent alterations and modifications will occur to others skilled in the art upon the reading and understanding of this specification and the annexed drawings. In particular regard to the various functions performed by the above described components (assemblies, devices, circuits, etc.) the terms (including a reference to a “means”) used to describe such components are intended to correspond, unless otherwise indicated, to any component which performs the specified function of the described component (i.e., that is functionally equivalent), even though not structurally equivalent to the disclosed structure which performs the function in the herein illustrated exemplary embodiments of the invention. In addition, while a particular feature of the invention may have been disclosed with respect to only one of several embodiments, such feature may be combined with one or more features of the other embodiments as may be desired and advantageous for any given or particular application.
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|U.S. Classification||118/723.0MA, 156/345.42, 156/345.41, 118/723.0MW|
|International Classification||C23C16/00, C23F1/00, H01L21/306|
|Cooperative Classification||H01J2237/3114, H01J37/32422, H01J37/077, H01J37/08, H01J37/32678, H01J2237/0041, H05H1/46, H01J2237/31701, H01J2237/06366, C23C14/357, H01J27/18|
|European Classification||H01J37/32M26, H01J37/32O10D, C23C14/35F4, H01J37/077, H01J37/08, H01J27/18, H05H1/46|
|Jun 23, 2011||SULP||Surcharge for late payment|
|Jun 23, 2011||FPAY||Fee payment|
Year of fee payment: 4
|Jul 24, 2015||REMI||Maintenance fee reminder mailed|
|Dec 11, 2015||LAPS||Lapse for failure to pay maintenance fees|
|Feb 2, 2016||FP||Expired due to failure to pay maintenance fee|
Effective date: 20151211