|Publication number||US7420222 B2|
|Application number||US 11/842,350|
|Publication date||Sep 2, 2008|
|Filing date||Aug 21, 2007|
|Priority date||Feb 1, 2001|
|Also published as||CA2433541A1, CA2769808A1, CN1552103A, CN100524848C, CN101976717A, CN101976717B, CN104835886A, EP1382073A2, EP1382073B1, US6791119, US7026659, US8426881, US8692277, US20020123164, US20040217362, US20060131599, US20070284604, US20090166658, US20100283077, WO2002061847A2, WO2002061847A3|
|Publication number||11842350, 842350, US 7420222 B2, US 7420222B2, US-B2-7420222, US7420222 B2, US7420222B2|
|Inventors||David B. Slater, Jr., Robert C. Glass, Charles M. Swoboda, Bernd Keller, James Ibbetson, Brian Thibeault, Eric J. Tarsa|
|Original Assignee||Cree, Inc.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (99), Non-Patent Citations (24), Referenced by (28), Classifications (25), Legal Events (2)|
|External Links: USPTO, USPTO Assignment, Espacenet|
This application is a divisional of application Ser. No. 11/338,918, filed Jan. 25, 2006, entitled Light Emitting Diodes Including Pedestals, which itself is a continuation of application Ser. No. 10/859,635, filed Jun. 3, 2004, entitled Light Emitting Diodes Including Pedestals, now U.S. Pat. No. 7,026,659, which itself is a divisional of application Ser. No. 10/057,821, filed Jan. 25, 2002, entitled Light Emitting Diodes Including Modifications for Light Extraction and Manufacturing Methods Therefor, now U.S. Pat. No. 6,791,119, and claims the benefit of Provisional Application Ser. No. 60/265,707, filed Feb. 1, 2001 entitled Light Emitting Diode With Optically Transparent Silicon Carbide Substrate, and Provisional Application Ser. No. 60/307,235, filed Jul. 23, 2001, entitled Light Emitting Diodes Including Modifications for Light Extraction and Manufacturing Methods Therefor, the disclosures of all of which are hereby incorporated herein by reference in their entirety as if set forth fully herein.
This invention was made possible with government support under grant number 70NANB8H4022 from the National Institute of Standards and Technology (Advanced Technology Program). The United States government has certain rights to this invention.
This invention relates to microelectronic devices and fabrication methods therefor, and more particularly to light emitting diodes (LEDs) and manufacturing methods therefor.
Light emitting diodes are widely used in consumer and commercial applications. As is well known to those having skill in the art, a light emitting diode generally includes a diode region on a microelectronic substrate. The microelectronic substrate may comprise, for example, gallium arsenide, gallium phosphide, alloys thereof, silicon carbide and/or sapphire. Continued developments in LEDs have resulted in highly efficient and mechanically robust light sources that can cover the visible spectrum and beyond. These attributes, coupled with the potentially long service life of solid state devices, may enable a variety of new display applications, and may place LEDs in a position to compete with the well entrenched incandescent and fluorescent lamps.
One measure of efficiency of LEDs is the cost per lumen. The cost per lumen for an LED may be a function of the manufacturing cost per LED chip, the internal quantum efficiency of the LED material and the ability to couple or extract the generated light out of the device. An overview of light extraction issues may be found in the textbook entitled High Brightness Light Emitting Diodes to Stringfellow et al., Academic Press, 1997, and particularly Chapter 2, entitled Overview of Device Issues in High-Brightness Light Emitting Diodes, to Craford, at pp. 47-63.
Light extraction has been accomplished in many ways, depending, for example, on the materials that are used to fabricate the diode region and the substrate. For example, in gallium arsenide and gallium phosphide material systems, a thick, p-type, topside window layer may be used for light extraction. The p-type window layer may be grown because high epitaxial growth rates may be possible in the gallium arsenide/gallium phosphide material systems using liquid and/or vapor phase epitaxy. Moreover, current spreading may be achieved due to the conductivity of the p-type topside window layer. Chemical etching with high etch rates and high etch selectivity also may be used to allow the removal of at least some of the substrate if it is optically absorbent. Distributed Bragg reflectors also have been grown between an absorbing substrate and the diode region to decouple the emitting and absorbing regions.
Other approaches for light extraction may involve mechanical shaping or texturing of the diode region and/or the substrate. However, it may be desirable to provide other light extraction techniques that can allow further improvements in extraction efficiency. Moreover, it may be desirable to increase the area of an LED chip from about 0.1 mm2 to larger areas, to thereby provide larger LEDs. Unfortunately, the effectiveness of these shaping techniques may not be maintained as the chip dimensions are scaled up for higher power/intensity and/or other applications.
Much development interest and commercial activity recently has focused on LEDs that are fabricated in or on silicon carbide, because these LEDs can emit radiation in the blue/green portions of the visible spectrum. See, for example, U.S. Pat. No. 5,416,342 to Edmond et al., entitled Blue Light-Emitting Diode With High External Quantum Efficiency, assigned to the assignee of the present application, the disclosure of which is hereby incorporated herein by reference in its entirety as if set forth fully herein. There also has been much interest in LEDs that include gallium nitride-based diode regions on silicon carbide substrates, because these devices also may emit light with high efficiency. See, for example, U.S. Pat. No. 6,177,688 to Linthicum et al., entitled Pendeoepitaxial Gallium Nitride Semiconductor Layers On Silicon Carbide Substrates, the disclosure of which is hereby incorporated herein by reference in its entirety as if set forth fully herein.
In such silicon carbide LEDs or gallium nitride LEDs on silicon carbide, it may be difficult to use conventional techniques for light extraction. For example, it may be difficult to use thick p-type window layers because of the relatively low growth rate of gallium nitride. Also, although such LEDs may benefit from the use of Bragg reflectors and/or substrate removal techniques, it may be difficult to fabricate a reflector between the substrate and the gallium nitride diode region and/or to etch away at least part of the silicon carbide substrate.
U.S. Pat. No. 4,966,862 to Edmond, entitled Method of Production of Light Emitting Diodes, assigned to the assignee of the present application, the disclosure of which is hereby incorporated herein by reference in its entirety as if set forth fully herein, describes a method for preparing a plurality of light emitting diodes on a single substrate of a semiconductor material. The method is used for structures where the substrate includes an epitaxial layer of the same semiconductor material that in turn comprises layers of p-type and n-type material that define a p-n junction therebetween. The epitaxial layer and the substrate are etched in a predetermined pattern to define individual diode precursors, and deeply enough to form mesas in the epitaxial layer that delineate the p-n junctions in each diode precursor from one another. The substrate is then grooved from the side of the epitaxial layer and between the mesas to a predetermined depth to define side portions of diode precursors in the substrate while retaining enough of the substrate beneath the grooves to maintain its mechanical stability. Ohmic contacts are added to the epitaxial layer and to the substrate and a layer of insulating material is formed on the diode precursor. The insulating layer covers the portions of the epitaxial layer that are not covered by the ohmic contact, any portions of the one surface of the substrate adjacent the mesas, and the side portions of the substrate. As a result, the junction and the side portions of the substrate of each diode are insulated from electrical contact other than through the ohmic contacts. When the diodes are separated they can be conventionally mounted with the junction side down in a conductive epoxy without concern that the epoxy will short circuit the resulting diode. See the abstract of U.S. Pat. No. 4,966,862.
U.S. Pat. No. 5,210,051 to Carter, Jr., entitled High Efficiency Light Emitting Diodes From Bipolar Gallium Nitride, assigned to the assignee of the present application, the disclosure of which is hereby incorporated herein by reference in its entirety as if set forth fully herein, describes a method of growing intrinsic, substantially undoped single crystal gallium nitride with a donor concentration of 7×1017 cm3 or less. The method comprises introducing a source of nitrogen into a reaction chamber containing a growth surface while introducing a source of gallium into the same reaction chamber and while directing nitrogen atoms and gallium atoms to a growth surface upon which gallium nitride will grow. The method further comprises concurrently maintaining the growth surface at a temperature high enough to provide sufficient surface mobility to the gallium and nitrogen atoms that strike the growth surface to reach and move into proper lattice sites, thereby establishing good crystallinity, to establish an effective sticking coefficient, and to thereby grow an epitaxial layer of gallium nitride on the growth surface, but low enough for the partial pressure of nitrogen species in the reaction chamber to approach the equilibrium vapor pressure of those nitrogen species over gallium nitride under the other ambient conditions of the chamber to thereby minimize the loss of nitrogen from the gallium nitride and the nitrogen vacancies in the resulting epitaxial layer. See the abstract of U.S. Pat. No. 5,210,051.
In view of the above discussion, improved light extraction techniques may be desirable for LEDs, especially LEDs that are fabricated from silicon carbide, that are fabricated from gallium nitride on silicon carbide and/or that have a relatively large area.
Light emitting diodes according to some embodiments of the invention include a substrate having first and second opposing faces that is transparent to optical radiation in a predetermined wavelength range and that is patterned to define, in cross-section, a plurality of pedestals that extend into the substrate from the first face towards the second face. As used herein, the term “transparent” refers to an element, such as a substrate, layer or region that allows some or all optical radiation in a predetermined wavelength range to pass therethrough, i.e., not opaque. A diode region on the second face is configured to emit light in the predetermined wavelength range, into the substrate upon application of voltage across the diode region. In other embodiments, a mounting support on the diode region, opposite the substrate is configured to support the diode region, such that the light that is emitted from the diode region into the substrate, is emitted from the first face upon application of voltage across the diode region. In some embodiments, the light emitting diode on a transparent substrate with pedestals is flip-mounted on a mounting support, with the diode region adjacent to the mounting support and a substrate opposite the mounting support, for light emission through the substrate. In other embodiments, the light emitting diode on a transparent substrate with pedestals is mounted on a mounting support, with the substrate adjacent to the mounting support and the diode region opposite the mounting support. Thus, non-flip-chip mounting also may be provided.
In yet other embodiments of the invention, a reflector also is provided between the mounting support and the diode region or the substrate. The reflector may be configured to reflect light that is emitted from the diode region back through the diode region, through the substrate and from the pedestals, upon application of voltage across the diode region. In other embodiments, a transparent electrode also may be provided between the diode region and the reflector. In still other embodiments, a solder preform and/or other bonding region may be provided between the reflector and the mounting support and/or an optical element such as a window or lens may be provided adjacent the first face opposite the diode region. In yet other embodiments, the diode region includes a peripheral portion and at least one central portion that is enclosed by the peripheral portion, and the light emitting diode further comprises at least one electrode on the diode region, that is confined to within the at least one central portion and does not extend onto the peripheral portion. It will be understood that the central portion need not be centered on the diode region.
In other embodiments of the invention, a contact structure for the substrate and/or the diode region of an LED includes a transparent ohmic region, a reflector, a barrier region and a bonding region. The transparent ohmic region provides electrical contact and/or current spreading. The reflector reflects at least some incident radiation and also may provide current spreading. The barrier region protects the reflector and/or the ohmic region. The bonding region bonds the LED package to a mounting support. In some embodiments, the functionality of the transparent ohmic region and the reflector can be combined in a single ohmic and reflector region. Contact structures according to these embodiments of the invention also may be used with conventional silicon carbide LEDs, gallium nitride on silicon carbide LEDs and/or other LEDs.
In still other embodiments of the present invention, the first face of the substrate may include therein at least one groove that defines a plurality of pedestals, such as triangular pedestals, in the substrate. The grooves may include tapered sidewalls and/or a beveled floor. The first and second faces of the substrate may have square perimeters, and/or the first face of the substrate may be textured. The light emitting diode may further include a plurality of emission regions and/or electrodes on the diode region, a respective one of which is confined to within a respective one of the pedestals and does not extend beyond the respective one of the pedestals.
In yet other embodiments of the present invention, the first face of the substrate includes therein an array of via holes. The via holes may include tapered sidewalls and/or a floor. The via holes preferably extend only part way through the substrate, but in other embodiments they can extend all the way through the substrate. The first and second substrate faces may have square perimeters, and/or the first face may be textured. The light emitting diodes may further include at least one electrode on the diode region that does not overlap the array of via holes.
The pedestals and/or array of via holes also may be used with light emitting diodes that include silicon carbide or non-silicon carbide substrates, to allow improved light extraction therefrom. Moreover, electrodes as described above also may be used with light emitting diodes that include a non-silicon carbide substrate. For example, when the first face of the substrate has smaller surface area than the second face, and the diode region is on the second face, an emission region may be provided on the diode region that is confined to within the smaller surface area of the first face.
In other embodiments of the present invention, light emitting diodes include a compensated, colorless silicon carbide substrate having first and second opposing faces and a gallium nitride-based diode region on the second face that is configured to emit light into the substrate upon application of voltage across the diode region. Mounting supports, reflectors, contact structures, grooves, pedestals, texturing and/or confined emission areas/electrodes may be provided according to any of the embodiments that were described above.
Accordingly, many of the above-described embodiments comprise embodiments of means for extracting from the substrate at least some of the light that is emitted into the substrate by the diode region. Examples of these means for extracting include compensating dopants in the silicon carbide substrate to provide a colorless silicon carbide substrate, patterning the substrate to define, in cross-section, a plurality of pedestals that extend into the substrate from the first face toward the second face and/or many of the other embodiments that were described above, including mounting supports, reflectors, contact structures, grooves, pedestals, texturing and/or confined emission areas/electrodes.
Light emitting diodes may be manufactured, according to some embodiments of the invention, by forming a diode region that is configured to emit light in a predetermined wavelength range on a second face of a substrate having first and second opposing faces, and that is transparent to the optical radiation in the predetermined wavelength range. The substrate is patterned before, during and/or after forming the diode region to define, in cross-section, a plurality of pedestals that extend into the substrate from the first face towards the second face. In other embodiments, the diode region is mounted onto a mounting substrate that is configured to support the diode region such that the light that is emitted from the diode region into the substrate is emitted from the first face upon application of voltage across the diode region. The mounting may be preceded by forming a reflector on the diode region such that the reflector is configured to reflect light that is emitted from the diode region back into the diode region through the substrate and from the first face, upon application of voltage across the diode region. Prior to forming the reflector, a transparent ohmic electrode also may be formed on the diode region opposite the substrate. A barrier region and/or an adhesion region also may be formed after forming the reflector. In other embodiments, a mounting support is placed adjacent the reflector with the barrier region and/or the adhesion region therebetween, and the LED is joined to the mounting support. In still other embodiments, an electrode is formed on the diode region that is confined to within the central portion thereof and does not extend onto the peripheral portion thereof.
Other method embodiments include forming a plurality of intersecting grooves into the first face of the substrate to define the plurality of pedestals, such as triangular pedestals, in the substrate. The grooves may include tapered sidewalls and/or a beveled floor. The first face of the substrate also may be textured. A plurality of electrodes also may be formed on the diode region. In some embodiments, a respective one of the electrodes is confined to within a respective one of the pedestals and does not extend beyond the respective one of the pedestals.
Still other method embodiments according to the present invention include reactive ion etching an array of via holes in the first face of the substrate. The via holes may include tapered sidewalls and/or a floor. The first face also may be textured. An electrode may be formed on the diode region that does not overlap the array of via holes.
Sawing a plurality of intersecting grooves and/or reactive etching an array of via holes into the first face may be used for light emitting diodes that include a silicon carbide or non-silicon carbide substrate to allow improved light extraction therefrom. Moreover, the formation of an emission region on the diode region that is confined to within the smaller surface area of the first face also may be used for other conventional light emitting diodes, to allow improved light extraction therefrom.
The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the thickness of layers and regions are exaggerated for clarity. Like numbers refer to like elements throughout. It will be understood that when an element such as a layer, region or substrate is referred to as being “on” or extending “onto” another element, it can be directly on or extend directly onto the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” or extending “directly onto” another element, there are no intervening elements present. Moreover, each embodiment described and illustrated herein includes its complementary conductivity type embodiment as well.
Embodiments of the invention now will be described, generally with reference to gallium nitride-based light emitting diodes on silicon carbide-based substrates. However, it will be understood by those having skill in the art that many embodiments of the invention may be employed with any combination of a substrate that is non-absorbing or transparent to the emitted light and an index matched light emitting diode epitaxial layer. In some embodiments, the refractive index of the substrate is greater than that of the diode. Accordingly, combinations can include an AlGaInP diode on a GaP substrate; an InGaAs diode on a GaAs substrate; an AlGaAs diode on a GaAs substrate; an SiC diode on an SiC Substrate, an SiC diode on a sapphire (Al2O3) substrate; and/or a nitride-based diode on a gallium nitride, silicon carbide, aluminum nitride, zinc oxide and/or other substrate.
Still referring to
The active region 130 may comprise a single layer of n-type, p-type or intrinsic gallium nitride-based materials, another homostructure, a single heterostructure, a double heterostructure and/or a quantum well structure, all of which are well known to those having skill in the art. Moreover, the active region 130 may comprise a light emitting layer bounded by one or more cladding layers. Preferably, the n-type gallium nitride layer 120 comprises silicon-doped gallium nitride, while the p-type gallium nitride layer 130 comprises magnesium-doped gallium nitride. In addition, the active region 130 preferably includes at least one indium gallium nitride quantum well.
In some embodiments, the ohmic contact 150 for the p-type gallium nitride layer 140 comprises platinum, nickel and/or titanium/gold. In other embodiments, a reflective ohmic contact comprising, for example, aluminum and/or silver, may be used. The ohmic contact 160 to the n-type gallium nitride 120 preferably comprises aluminum and/or titanium. Other suitable materials that form ohmic contacts to p-type gallium nitride and n-type gallium nitride may be used for ohmic contacts 150 and 160, respectively. Examples of ohmic contacts to n-type gallium nitride and p-type gallium nitride are shown, for example in U.S. Pat. No. 5,767,581, the disclosure of which is hereby incorporated herein by reference in its entirety as if set forth fully herein.
Still referring to
In other embodiments, the silicon carbide substrate 110 is a compensated, colorless silicon carbide substrate, as described in the above-cited U.S. Pat. No. 5,718,760. As described therein, colorless silicon carbide may be fabricated by sublimation of silicon carbide in the presence of compensating amounts of p-type and n-type dopants. Naturally-occurring silicon carbide typically is black, due to high impurity levels. Conventional microelectronic silicon carbide wafers have a translucent blue, amber or green hue depending upon the controlled doping level in the crystal. As described in U.S. Pat. No. 5,718,760, it was found that by carefully controlling the doping of silicon carbide crystals with compensating levels of n-type and p-type dopants at low doping concentrations, colorless single crystals of silicon carbide may be obtained. In particular, it may be desirable to reduce and preferably minimize the unintentional nitrogen (n-type) doping in the material and to introduce low levels of compensating p-type dopants, to thereby create colorless silicon carbide.
As seen in
In accordance with some embodiments of the present invention, colorless boules of silicon carbide grown, for example, according to processes described in U.S. Pat. No. 5,718,760 and references cited therein, may be cut into wafers for processing. Gallium nitride-based epitaxial layers may be formed on the wafers, for example, as described in U.S. Pat. No. 6,177,688, which then can be processed to produce structures such as are shown in
In LEDs having silicon carbide substrates, it previously may have been preferable to prevent light generated in the active region from entering the substrate, for a number of reasons. For example, although silicon carbide may be highly transparent compared to gallium arsenide, conventional silicon carbide substrates can absorb some light in portions of the visible spectrum. Moreover, since conventional silicon carbide devices are vertical devices that are mounted with the substrates facing down, some light entering the substrate can be reflected back through the substrate before it is extracted from the device, thereby increasing absorption losses in the substrate. Reflection losses also may reduce the overall efficiency of the device.
Gallium nitride and silicon carbide have similar indices of refraction. In particular, gallium nitride has an index of refraction of about 2.5, while silicon carbide has an index of refraction of about 2.6-2.7. In that sense, gallium nitride and silicon carbide may be said to be optically matched. Thus, very little internal reflection may occur at a boundary between gallium nitride and silicon carbide. Consequently, it may be difficult to prevent light generated in a gallium nitride-based layer from passing into a silicon carbide substrate.
By providing a compensated, colorless silicon carbide substrate that is grown, for example, in accordance with methods described in U.S. Pat. No. 5,718,760, absorption of visible light in the silicon carbide substrate may be reduced. As is well known to one skilled in the art, absorption losses may increase as doping increases due to the so-called “Biedermann Effect”. Consequently, extraction of visible light from the substrate may be enhanced when doping is reduced and preferably minimized, thereby improving the overall efficiency of the device. In contrast to silicon carbide, sapphire has an index of refraction of about 1.8. Thus, in a sapphire-based gallium nitride LED, a large portion of light generated in the gallium nitride active layer may not pass into the substrate but will be reflected away from the substrate.
In other embodiments of the present invention, the doping of the silicon carbide substrate may be controlled such that light in the wavelength range generated in the diode region 170 of the device is not absorbed by the substrate 110, although other wavelengths may be absorbed. Thus, the absorption characteristics of the silicon carbide substrate may be adjusted to pass desired wavelengths of light. For example, the active region 130 may be designed to emit blue light in the vicinity of 450 nm. The doping of the silicon carbide substrate 110 may be controlled such that light rays having a wavelength of approximately 450 nm are not substantially absorbed by the substrate 110. Thus, although the substrate may not be entirely colorless, and other wavelengths may be absorbed, it nevertheless may be transparent to the wavelengths of interest, namely those generated in the LED region 170. In preferred embodiments, the bandgap and/or doping of the silicon carbide substrate 110 is controlled such that the substrate is transparent to light within the range of about 390-550 nm.
Thus, in some embodiments, the substrate 110 may be thought of as a filter which may improve the spectral purity of light output by the device. For example, it is known to those skilled in the art that gallium nitride-based blue LEDs may produce unwanted emission in the ultraviolet (UV) spectrum in addition to the desired emission. Such UV emissions may be undesirable at even moderately low power levels since they may degrade the plastic materials in which LEDs are packaged, which may result in reliability problems and/or reduced lifetimes. It is also known that 6H silicon carbide absorbs UV light. Thus, it may be preferable to extract light through a 6H silicon carbide substrate, which filters out unwanted UV emissions.
Instead of discouraging or inhibiting light from entering the substrate, as may be done conventionally, embodiments of the present invention can encourage light generated in the diode region 170 to enter the substrate 110, where it can be most efficiently extracted. Thus, some embodiments of the invention can provide means for extracting from the substrate, at least some of the light that is emitted into the substrate by the diode region. Accordingly, some embodiments of the present invention may be particularly suited for use in a so-called “flip-chip” or “upside-down” packaging configuration as will now be described in connection with
Referring now to
Still referring to
The reflector 240 may comprise an aluminum gallium nitride (AlGaN) layer and/or a distributed Bragg reflector that can reflect light from the active region 130 back towards the substrate 110. The design and fabrication of Bragg reflectors is well known to those having skill in the art and is described, for example, in U.S. Pat. No. 6,045,465, the disclosure of which is hereby incorporated herein by reference in its entirety as if set forth fully herein. It also will be understood that the reflector also can modify the pattern of photon emission from the active region 130 itself, thereby directing more photons to escape the device. Other conventional reflector structures also may be used.
Still referring to
LEDs 200 according to embodiments of the invention may be packaged in conventional dome structures 280 that include an optical element such as a lens 282 for light emission. The entire dome 280 may function as an optical element. An anode lead 260 and a cathode lead 270 also may be provided for external connections. The dome structure 280 may comprise plastic, glass and/or other materials and also may include silicone gel and/or other materials therein.
Referring now to
LEDs according to other embodiments of the present invention are illustrated in
Accordingly, light emitting diodes according to some embodiments of the invention include a substrate and a gallium nitride-based diode region. The substrate comprises single crystal, transparent silicon carbide for an emission range of interest, preferably fabricated via sublimation. The substrate may be between about 100 μm and about 1000 μm thick. External efficiency of the diode can be enhanced due to increased light extraction from the substrate. In some embodiments of the invention, the diode includes a reflector that reflects light generated in the diode region back into the substrate for subsequent extraction from the device. The reflector may comprise a layer of material with a relatively low index of refraction (such as AlGaN) on the active region opposite the substrate. Alternatively, the reflector may comprise a Bragg reflector within the structure and/or a coating layer of aluminum and/or silver on a transparent ohmic contact. Other embodiments will be described below. In yet other embodiments, a portion of the sidewalls of the substrate may be tapered and/or roughened to allow improved light extraction. Diodes according to embodiments of the present invention may be particularly suited for use in a flip-chip mounting structure. However, non-flip-chip mounting also may be used.
Embodiments of the invention that were described in
Referring now to
As also shown in
Finally, as also shown in
As shown in
As shown in
As shown in
As will be described in detail below, the grooves 720 of
Light extraction through LEDs of
The pedestals, via holes, sidewalls and/or grooves can improve light extraction because the vertical edges of the chip generally play a role in light extraction. Furthermore, for purposes of light extraction, the best shape for an LED chip may not be a square or rectangular perimeter. However, LED chips generally have square perimeters for reasons of packing density within a wafer. In a square chip, a ray striking a sidewall from any direction at an angle greater than the critical angle, and less than the complement of this angle, generally will be lost to internal reflections and subsequent absorption. Cylindrical chips may reduce internal reflections, but their manufacturability and packing density may be poor. Moreover, light generated at points further from the center of a cylindrical die may increasingly produce rays that strike the vertical sidewalls tangentially. More rays are once again lost to internal reflections and absorption. The overall die area then may need to be large compared to the active central area, which may be an inefficient use of wafer area, and may lead to higher cost.
In sharp contrast, some embodiments of the present invention can form pedestals, such as equilateral or non-equilateral triangular pedestals 730, in the substrate. Excellent wafer utilization may be maintained. In particular, a generated ray may have no more than one incidence and reflection at a sidewall 724, at an angle greater than the critical angle. Angles of incidence greater than the critical angle are reflected, but they may strike the next wall at less than the critical angle in all cases, assuming that the index of refraction for the encapsulating material is about 1.5 or greater. Thus, unlike die with sides at right angles or smooth continuous arcs, no ray may be lost in its entirety to internal reflection and absorption.
LEDs having a triangular shape versus a square LED with the same chip area, running at identical currents and having smooth vertical sidewalls can, for example, yield a 15% improvement in light output. In addition, tapered sidewalls or channels can be used with the triangular pedestals, to access even more of the trapped light in the substrate. Finally, triangular pedestals that may be formed using grooves cut at 45° angles or other angles relative to the square die can allow for standard die handling and separation techniques, but can provide for the extra light extraction advantage of a non-square-shaped chip. Standard edge shaping and die separation may be used. Similar effects may be provided using an array of via holes 820.
It will be understood that the LEDs of
Additional discussion of the use of solder preforms in the bonding regions 220/230 now will be provided. Small area LEDs may require exceptional care to prevent the silver epoxy that is used in attaching the die to the lead frame from contacting the sidewall of the chip and/or the conducting substrate. Such a contact may form a Schottky diode, which may be detrimental to the performance of vertical LED structures. The Schottky diode can shunt current around the LED because it has a lower forward turn-on voltage. The use of silver epoxy on a large chip may be more manageable than on a small chip, since over-dispensing may not cause the epoxy to come out from under the chip and possibly reach the vertical sidewall of the diode region and/or substrate. According to embodiments of the invention, a solder preform may be formed on or attached to the reflector or other layer, as will be described below. The preform may comprise a low temperature eutectic alloy, such as lead-tin, indium-gold, gold-tin and/or silver-tin solder. The preform shape can be well defined and the outward creep can be controlled by the pressure and/or temperature employed in the die attach process. Moreover, the thermal conductivity of a preform may be superior to silver epoxy, which can be advantageous for high-power devices.
Referring now to
It may be preferable for the exposed surface of the packaged LED chip to be textured and not polished. Conventional chips are packaged with a polished epitaxial side up, which can reduce light extraction therefrom. Texturing the exposed surface can provide a random probability that incident light can be transmitted instead of being internally reflected. It also will be understood that texturing the substrate backside need not preclude the formation of an ohmic contact to this substrate face. More particularly, vertical LEDs may have one contact to the active diode region and a backside contact to the backside of the substrate that is textured. Texturing of the sidewalls can provide up to 20% or more light emission compared to a polished surface.
Moreover, in the configurations shown in
Stated differently, the substrate 1310 has first and second opposing faces 1310 a and 1310 b, respectively. The first face 1310 a has smaller surface area than the second face. A diode region 1320 is on the second face 1310 b. An emission region 1320 a is included in the diode region 1320 and is confined to within the smaller surface area of the first face 1310 a. This configuration can make the chip look more like a point source at a focal point of a lens. Conventionally, light generated at the edges of the chip does not obtain much of a benefit of the shaped edges, since a smaller solid surface of emitted light interacts with those surfaces, compared to light generated in the center of the chip. Simulations show that about 20% more light output can be obtained by bringing the emission region in from the chip edges. This increased extraction efficiency of a reduced emission area also can make the light output less sensitive to losses in the substrate and at the substrate surface, since more light can escape on the first pass out of the active region. Embodiments of
Thus, efficiency of LEDs can be improved by reducing the emission area to be confined more in the central portions of the back-shaped regions. For a back-shaped device with a uniform emission area, much of the emission occurs over the shaped regions of the chip which may be less efficient. In contrast, in
It will be understood that embodiments according to the present invention can be used to improve sapphire-based nitride LEDs as well as LEDs based on other material systems, as was described above. However, in sapphire-based nitride LEDs, most of the light may remained trapped in the higher index nitride diode region. The gains may be greater for silicon carbide, gallium nitride, aluminum nitride, zinc oxide and/or other substrates where the index of refraction of the substrate is higher than that of sapphire. Thus, embodiments of the invention may not be limited to the use of silicon carbide as a substrate. It will be understood that when sapphire is used as a substrate, the insulating layer of sapphire may use two contacts to the diode region, such as was illustrated in
More specifically, referring to
Still referring to
As shown in
Still referring to
Still referring to
Finally, still referring to
Referring now to
Flip-chip mounting, as shown in
In sharp contrast, embodiments of the invention as illustrated in
Moreover, as also shown in
Still referring to
Still referring to
Still referring to
Flip-chip mounted ATON chips according to embodiments of
For example, as shown in
To allow enhanced scalability, the n-contact structure 1730 can be an interconnected grid structure that is matched in surface coverage and current spreading resistant to the conductivity of the underlying semiconductor material 1310. By reducing and preferably minimizing the surface coverage of the n-contact structures 1730 and employing silver and/or aluminum reflectors 1732, the absorption of the completed n-contact structures 1730 can be reduced and preferably minimized.
It will be understood that, in other embodiments, both the n- and p-electrodes may be formed on the side of the chip, for example, as described in U.S. Pat. No. 5,952,681 to Chen. This may further reduce the light absorption in the ohmic contacts for the n-electrode.
It also will be understood that flip-chip mounting and/or contact structures of
More specifically, referring to
Still referring to
Referring now to
Referring now to
Referring now to Block 1930, a contact structure is formed, for example as was described in connection with
Referring now to Block 1940, dicing is performed to separate individual LED chips. It will be understood that dicing need not be performed if a wafer size LED is being fabricated and dicing may be performed prior to forming the electrode structure of Block 1930 and/or prior to sawing the grooves and/or reactive ion etching at Block 1920.
Then, referring to Block 1950, the diode is joined to a mounting support, for example using a solder preform and/or other joining techniques, for example as was described in connection with
In the drawings and specification, there have been disclosed typical preferred embodiments of the invention and, although specific terms are employed, they are used in a generic and descriptive sense only and not for purposes of limitation, the scope of the invention being set forth in the following claims.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US3894919||May 9, 1974||Jul 15, 1975||Bell Telephone Labor Inc||Contacting semiconductors during electrolytic oxidation|
|US4238764||Jun 13, 1978||Dec 9, 1980||Thomson-Csf||Solid state semiconductor element and contact thereupon|
|US4441187||Jul 15, 1981||Apr 3, 1984||Bouley Jean Claude||A semiconductor laser light source|
|US4918497||Dec 14, 1988||Apr 17, 1990||Cree Research, Inc.||Blue light emitting diode formed in silicon carbide|
|US4966862||Aug 28, 1989||Oct 30, 1990||Cree Research, Inc.||Method of production of light emitting diodes|
|US5006908||Feb 12, 1990||Apr 9, 1991||Nippon Telegraph And Telephone Corporation||Epitaxial Wurtzite growth structure for semiconductor light-emitting device|
|US5027168||Aug 28, 1989||Jun 25, 1991||Cree Research, Inc.||Blue light emitting diode formed in silicon carbide|
|US5087949||Mar 5, 1991||Feb 11, 1992||Hewlett-Packard Company||Light-emitting diode with diagonal faces|
|US5162878||Dec 12, 1991||Nov 10, 1992||Eastman Kodak Company||Light-emitting diode array with projections|
|US5187547||Nov 19, 1990||Feb 16, 1993||Sanyo Electric Co., Ltd.||Light emitting diode device and method for producing same|
|US5210051||Jun 5, 1991||May 11, 1993||Cree Research, Inc.||High efficiency light emitting diodes from bipolar gallium nitride|
|US5237182||Nov 26, 1991||Aug 17, 1993||Sharp Kabushiki Kaisha||Electroluminescent device of compound semiconductor with buffer layer|
|US5247533||Dec 26, 1991||Sep 21, 1993||Toyoda Gosei Co., Ltd.||Gallium nitride group compound semiconductor laser diode|
|US5338994||Jun 4, 1993||Aug 16, 1994||General Electric Company||Method and apparatus for achieving current balance in parallel connected switching devices|
|US5369289||Oct 30, 1992||Nov 29, 1994||Toyoda Gosei Co. Ltd.||Gallium nitride-based compound semiconductor light-emitting device and method for making the same|
|US5393993||Dec 13, 1993||Feb 28, 1995||Cree Research, Inc.||Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices|
|US5416342||Jun 23, 1993||May 16, 1995||Cree Research, Inc.||Blue light-emitting diode with high external quantum efficiency|
|US5513204||Apr 12, 1995||Apr 30, 1996||Optical Concepts, Inc.||Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump|
|US5523589||Sep 20, 1994||Jun 4, 1996||Cree Research, Inc.||Vertical geometry light emitting diode with group III nitride active layer and extended lifetime|
|US5563422 *||Apr 28, 1994||Oct 8, 1996||Nichia Chemical Industries, Ltd.||Gallium nitride-based III-V group compound semiconductor device and method of producing the same|
|US5585648||Feb 3, 1995||Dec 17, 1996||Tischler; Michael A.||High brightness electroluminescent device, emitting in the green to ultraviolet spectrum, and method of making the same|
|US5604135||Aug 12, 1994||Feb 18, 1997||Cree Research, Inc.||Method of forming green light emitting diode in silicon carbide|
|US5627851||Feb 1, 1996||May 6, 1997||Ricoh Company, Ltd.||Semiconductor light emitting device|
|US5631190||Oct 7, 1994||May 20, 1997||Cree Research, Inc.||Method for producing high efficiency light-emitting diodes and resulting diode structures|
|US5718760||Feb 5, 1996||Feb 17, 1998||Cree Research, Inc.||Growth of colorless silicon carbide crystals|
|US5739554||May 8, 1995||Apr 14, 1998||Cree Research, Inc.||Double heterojunction light emitting diode with gallium nitride active layer|
|US5760479||Feb 28, 1997||Jun 2, 1998||Texas Instruments Incorporated||Flip-chip die attachment for a high temperature die to substrate bond|
|US5767581||Jun 17, 1996||Jun 16, 1998||Nichia Chemical Industries, Ltd.||Gallium nitride-based III-V group compound semiconductor|
|US5777350||Nov 30, 1995||Jul 7, 1998||Nichia Chemical Industries, Ltd.||Nitride semiconductor light-emitting device|
|US5779924||Mar 22, 1996||Jul 14, 1998||Hewlett-Packard Company||Ordered interface texturing for a light emitting device|
|US5846694||Feb 13, 1996||Dec 8, 1998||The Regents Of The University Of California||Microminiature optical waveguide structure and method for fabrication|
|US5912477||May 20, 1997||Jun 15, 1999||Cree Research, Inc.||High efficiency light emitting diodes|
|US5917202||Dec 21, 1995||Jun 29, 1999||Hewlett-Packard Company||Highly reflective contacts for light emitting semiconductor devices|
|US5952681||Nov 24, 1997||Sep 14, 1999||Chen; Hsing||Light emitting diode emitting red, green and blue light|
|US6015719||Apr 24, 1998||Jan 18, 2000||Hewlett-Packard Company||Transparent substrate light emitting diodes with directed light output|
|US6031243||Oct 14, 1997||Feb 29, 2000||Geoff W. Taylor||Grating coupled vertical cavity optoelectronic devices|
|US6046465||Apr 17, 1998||Apr 4, 2000||Hewlett-Packard Company||Buried reflectors for light emitters in epitaxial material and method for producing same|
|US6091085||Feb 19, 1998||Jul 18, 2000||Agilent Technologies, Inc.||GaN LEDs with improved output coupling efficiency|
|US6097041||Aug 24, 1998||Aug 1, 2000||Kingmax Technology Inc.||Light-emitting diode with anti-reflector|
|US6118259||Apr 27, 1999||Sep 12, 2000||U.S. Philips Corporation||Controlled current generator for operating light emitting diodes|
|US6120600||Apr 13, 1998||Sep 19, 2000||Cree, Inc.||Double heterojunction light emitting diode with gallium nitride active layer|
|US6121636||May 5, 1998||Sep 19, 2000||Sony Corporation||Semiconductor light emitting device|
|US6121637||Oct 2, 1998||Sep 19, 2000||Rohm Co., Ltd.||Semiconductor light emitting device with increased luminous power|
|US6133589||Jun 8, 1999||Oct 17, 2000||Lumileds Lighting, U.S., Llc||AlGaInN-based LED having thick epitaxial layer for improved light extraction|
|US6139166||Jun 24, 1999||Oct 31, 2000||Lumileds Lighting B.V.||Luminaire having beam splitters for mixing light from different color ' LEDs|
|US6147458||Jun 29, 1999||Nov 14, 2000||U.S. Philips Corporation||Circuit arrangement and signalling light provided with the circuit arrangement|
|US6169294||Sep 8, 1998||Jan 2, 2001||Epistar Co.||Inverted light emitting diode|
|US6177688||Nov 24, 1998||Jan 23, 2001||North Carolina State University||Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates|
|US6187606||Sep 20, 1999||Feb 13, 2001||Cree, Inc.||Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure|
|US6194742||Jun 5, 1998||Feb 27, 2001||Lumileds Lighting, U.S., Llc||Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices|
|US6201264||Jan 14, 1999||Mar 13, 2001||Lumileds Lighting, U.S., Llc||Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials|
|US6204523||Nov 6, 1998||Mar 20, 2001||Lumileds Lighting, U.S., Llc||High stability optical encapsulation and packaging for light-emitting diodes in the green, blue, and near UV range|
|US6222207||May 24, 1999||Apr 24, 2001||Lumileds Lighting, U.S. Llc||Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip|
|US6229160||Jun 3, 1997||May 8, 2001||Lumileds Lighting, U.S., Llc||Light extraction from a semiconductor light-emitting device via chip shaping|
|US6346771||Nov 19, 1998||Feb 12, 2002||Unisplay S.A.||High power led lamp|
|US6410942||Nov 14, 2000||Jun 25, 2002||Cree Lighting Company||Enhanced light extraction through the use of micro-LED arrays|
|US6455878||May 15, 2001||Sep 24, 2002||Lumileds Lighting U.S., Llc||Semiconductor LED flip-chip having low refractive index underfill|
|US6459100||Sep 16, 1998||Oct 1, 2002||Cree, Inc.||Vertical geometry ingan LED|
|US6504180||Jul 26, 1999||Jan 7, 2003||Imec Vzw And Vrije Universiteit||Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom|
|US6657236||Nov 28, 2000||Dec 2, 2003||Cree Lighting Company||Enhanced light extraction in LEDs through the use of internal and external optical elements|
|US6791119||Jan 25, 2002||Sep 14, 2004||Cree, Inc.||Light emitting diodes including modifications for light extraction|
|US6803243||Oct 31, 2001||Oct 12, 2004||Cree, Inc.||Low temperature formation of backside ohmic contacts for vertical devices|
|US6821804||Sep 17, 2003||Nov 23, 2004||Cree, Inc.||Enhanced light extraction in LEDs through the use of internal and external optical elements|
|US6884644||Sep 16, 1999||Apr 26, 2005||Cree, Inc.||Low temperature formation of backside ohmic contacts for vertical devices|
|US20020121642||Sep 16, 1998||Sep 5, 2002||Kathleen Marie Doverspike||Vertical geometry ingan led|
|US20020179910||Oct 31, 2001||Dec 5, 2002||Slater David B.||Low temperature formation of backside ohmic contacts for vertical devices|
|US20030006418||May 7, 2002||Jan 9, 2003||Emerson David Todd||Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures|
|US20030025212||May 9, 2001||Feb 6, 2003||Bhat Jerome Chandra||Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa|
|US20040149999||Jun 3, 2002||Aug 5, 2004||Toshiya Uemura||lll group nitride based semiconductor luminescent element|
|EP0051172A1||Oct 12, 1981||May 12, 1982||Siemens Aktiengesellschaft||Ohmic contact on a transparent substrate of a device|
|EP0951055A2||Nov 10, 1998||Oct 20, 1999||Hewlett-Packard Company||Epitaxial material grown laterally within a trench|
|EP0961328A2||May 27, 1999||Dec 1, 1999||Sumitomo Electric Industries, Limited||Gallium nitride-type semiconductor device|
|EP1168460A2||Jun 29, 2001||Jan 2, 2002||Kabushiki Kaisha Toshiba||Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element|
|GB2346480A||Title not available|
|JP2000077713A||Title not available|
|JP2000195827A||Title not available|
|JP2001291899A||Title not available|
|JPH0982587A||Title not available|
|JPH01225377A||Title not available|
|JPH06232510A||Title not available|
|JPH07235729A||Title not available|
|JPH08321660A||Title not available|
|JPH09223846A||Title not available|
|JPH10163530A||Title not available|
|JPH10233549A||Title not available|
|JPH10256604A||Title not available|
|JPH11121803A||Title not available|
|JPH11150302A||Title not available|
|JPH11191641A||Title not available|
|JPH11220168A||Title not available|
|JPH11317548A||Title not available|
|JPH11340514A||Title not available|
|JPS56131977A||Title not available|
|JPS61110476A||Title not available|
|WO2000033365A1||Nov 23, 1999||Jun 8, 2000||North Carolina State University||Fabrication of gallium nitride layers by lateral growth|
|WO2001047039A1||Dec 21, 2000||Jun 28, 2001||Lumileds Lighting, U.S., Llc||Method of making a iii-nitride light-emitting device with increased light generating capability|
|WO2002075819A2||Mar 15, 2002||Sep 26, 2002||Osram Opto Semiconductors Gmbh||Radiation-emitting optical component|
|WO2002101841A1||Jun 3, 2002||Dec 19, 2002||Toyoda Gosei Co., Ltd.||Iii group nitride based semiconductor luminescent element|
|WO2003010817A2||Jul 23, 2002||Feb 6, 2003||Cree, Inc.||Light emitting diodes including modifications for submount bonding and manufacturing methods therefor|
|1||Biederman, The Optical Absorption Bands and Their Anisotrophy in the Various Modifications of SiC, Solid State Communications, vol. 3, 1965, pp. 343-346.|
|2||Craford, Outlook for AlinGaP Technology, Presentation, Strategies in Light 2000.|
|3||Craford, Overview of Device Issues in High-Brightness Light-Emitting Diodes, Chapter 2, High Brightness Light Emitting Diodes: Semiconductors and Semimetals, vol. 48, Stringfellow et al. ed., Academic Press, 1997, pp. 47-63.|
|4||Honma et al., Evaluation of Barrier Metals of Solder Bumps for Flip-Chip Interconnection, Electronic Manufacturing Technology Symposium, 1995, Proceedings of 1995 Japan International, 18<SUP>th </SUP>IEEE/CPMT, Dec. 4, 1995, pp. 113-116.|
|5||International Search Report, PCT/US02/02849, Dec. 2, 2002.|
|6||International Search Report, PCT/US02/23266, May 22, 2003.|
|7||International Search Report, PCT/US03/21909, Aug. 10, 2004.|
|8||Invitation to Pay Additional Fees, Annex to Form PCT/ISA/206, Communication Relating to the Results of the Partial International Search, PCT/US02/02849, Aug. 26, 2002.|
|9||Krames et al., High-Power Truncated-Inverted-Pyramid (Al<SUB>x</SUB>Ga<SUB>1-x</SUB>)<I/><SUB>0.5</SUB>In<SUB>0.5</SUB>P/GaP Light-Emitting Diodes Exhibiting >50% External Quantum Efficiency, Applied Physics Letters, vol. 75, No. 16, Oct. 18, 1999, pp. 2365-2367.|
|10||Lambrecht et al., Band Structure Interpretation of the Optical Transitions Between Low-Lying Conduction Bands in n-Type Doped SiC Polytypes, Materials Science Forum, vols. 264-268, 1998, pp. 271-274.|
|11||Lee et al., Bonding of InP Laser Diodes by Au-Sn Solder and Tungsten-Based Barrier Metallization Schemes, Semiconductor Science and Technology, vol. 9, No. 4, Apr. 1994, pp. 379-386.|
|12||Mensz et al., In<SUB>x</SUB>Ga<SUB>1-x</SUB>N/Al<SUB>y</SUB>Ga<SUB>1-y</SUB>N Violet Light Emitting Diodes With Reflective p-Contacts for High Single Sided Light Extraction, Electronics Letters, vol. 33, No. 24, Nov. 20, 1997, pp. 2066-2068.|
|13||Official Action with English language translation, JP Application No. 2002-561291, Dec. 15, 2006.|
|14||OSRAM Enhances Brightness of Blue InGaN LEDs, Compound Semiconductor, vol. 7, No. 1, Feb. 2001, p. 7.|
|15||U.S. Appl. No. 09/154,363, entitled Vertical Geometry InGaN LED.|
|16||U.S. Appl. No. 09/787,189, filed Mar. 15, 2001, Low Temperature Formation of Backside Ohmic Contacts for Vertical Devices.|
|17||U.S. Appl. No. 10/003,331, filed Oct. 31, 2001, Low Temperature Formation of Backside Ohmic Contacts for Vertical Devices.|
|18||U.S. Appl. No. 60/265,707, filed Feb. 1, 2001, entitled Light Emitting Diode With Optically Transparent Silicon Carbide Substrate.|
|19||U.S. Appl. No. 60/294,308, filed May 30, 2001, Light Emitting Diode Structure With Superlattice Structure.|
|20||U.S. Appl. No. 60/294,378, filed May 30, 2001, Light Emitting Diode Structure With Multi-Quantum Well and Superlattice Structure.|
|21||U.S. Appl. No. 60/294,445, filed May 30, 2001, Multi-Quantum Well Light Emitting Diode Structure.|
|22||U.S. Appl. No. 60/307,235, filed Jul. 23, 2001, Light Emitting Diodes Including Modifications for Light Extraction and Manufacturing Methods Therefor.|
|23||U.S. Appl. No. 60/411,980, filed Sep. 19, 2002, Phosphor-Coated Light Emitting Diodes Including Tapered Sidewalls, and Fabrication Methods.|
|24||Yoo et al., Bulk Crystal Growth of 6H-SiC on Polytype-Controlled Substrates Through Vapor Phase and Characterization, Journal of Crystal Growth, vol. 115, vol. 1991, pp. 733-739.|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US8012257||Mar 30, 2007||Sep 6, 2011||Crystal Is, Inc.||Methods for controllable doping of aluminum nitride bulk crystals|
|US8080833||Apr 21, 2010||Dec 20, 2011||Crystal Is, Inc.||Thick pseudomorphic nitride epitaxial layers|
|US8088220||May 23, 2008||Jan 3, 2012||Crystal Is, Inc.||Deep-eutectic melt growth of nitride crystals|
|US8096671||Apr 6, 2009||Jan 17, 2012||Nmera, Llc||Light emitting diode illumination system|
|US8123859||Jul 22, 2010||Feb 28, 2012||Crystal Is, Inc.||Method and apparatus for producing large, single-crystals of aluminum nitride|
|US8222650||Nov 12, 2009||Jul 17, 2012||Crystal Is, Inc.||Nitride semiconductor heterostructures and related methods|
|US8323406||Jan 17, 2008||Dec 4, 2012||Crystal Is, Inc.||Defect reduction in seeded aluminum nitride crystal growth|
|US8586963||Dec 8, 2010||Nov 19, 2013||Lehigh University||Semiconductor light-emitting devices having concave microstructures providing improved light extraction efficiency and method for producing same|
|US8698183||Jul 2, 2013||Apr 15, 2014||Lg Innotek Co., Ltd.||Light emitting diode and method for manufacturing the same|
|US8747552||Dec 18, 2009||Jun 10, 2014||Crystal Is, Inc.||Doped aluminum nitride crystals and methods of making them|
|US8834630||Nov 6, 2012||Sep 16, 2014||Crystal Is, Inc.||Defect reduction in seeded aluminum nitride crystal growth|
|US8912565||Jan 28, 2014||Dec 16, 2014||Lg Innotek, Co., Ltd.||Light emitting diode and method for manufacturing the same|
|US8962359||Jul 19, 2012||Feb 24, 2015||Crystal Is, Inc.||Photon extraction from nitride ultraviolet light-emitting devices|
|US9028612||Jun 30, 2011||May 12, 2015||Crystal Is, Inc.||Growth of large aluminum nitride single crystals with thermal-gradient control|
|US9034103||Jun 30, 2010||May 19, 2015||Crystal Is, Inc.||Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them|
|US9105761||Nov 13, 2014||Aug 11, 2015||Lg Innotek Co., Ltd.||Light emitting diode and method for manufacturing the same|
|US9196797 *||Oct 26, 2012||Nov 24, 2015||Genesis Photonics Inc.||Light emitting diode device and flip-chip packaged light emitting diode device|
|US9299880||Mar 13, 2014||Mar 29, 2016||Crystal Is, Inc.||Pseudomorphic electronic and optoelectronic devices having planar contacts|
|US9437430||Jan 25, 2008||Sep 6, 2016||Crystal Is, Inc.||Thick pseudomorphic nitride epitaxial layers|
|US9447519||Apr 16, 2015||Sep 20, 2016||Crystal Is, Inc.||Aluminum nitride bulk crystals having high transparency to untraviolet light and methods of forming them|
|US9447521||Oct 22, 2014||Sep 20, 2016||Crystal Is, Inc.||Method and apparatus for producing large, single-crystals of aluminum nitride|
|US9525032||Mar 26, 2014||Dec 20, 2016||Crystal Is, Inc.||Doped aluminum nitride crystals and methods of making them|
|US9580833||Apr 15, 2015||Feb 28, 2017||Crystal Is, Inc.||Growth of large aluminum nitride single crystals with thermal-gradient control|
|US9624601||Aug 13, 2014||Apr 18, 2017||Crystal Is, Inc.||Defect reduction in seeded aluminum nitride crystal growth|
|US9670591||Aug 13, 2014||Jun 6, 2017||Crystal Is, Inc.||Defect reduction in seeded aluminum nitride crystal growth|
|US20080182092 *||Jan 17, 2008||Jul 31, 2008||Crystal Is, Inc.||Defect reduction in seeded aluminum nitride crystal growth|
|US20110155999 *||Dec 8, 2010||Jun 30, 2011||Lehigh University||Semiconductor light-emitting devices having concave microstructures providing improved light extraction efficiency and method for producing same|
|US20130134464 *||Oct 26, 2012||May 30, 2013||Genesis Photonics Inc.||Light emitting diode device and flip-chip packaged light emitting diode device|
|U.S. Classification||257/98, 257/E33.064, 257/99, 257/E33.072|
|International Classification||H01L33/40, H01L33/22, H01L33/62, H01L33/10, H01L33/20, H01L33/60|
|Cooperative Classification||H01L2924/12032, H01L2924/12041, H01L2224/73265, H01L33/10, H01L33/62, H01L2924/01322, H01L33/60, H01L2224/32014, H01L33/20, H01L2924/01079, H01L33/405, H01L2224/48091, H01L2924/10253|
|European Classification||H01L33/40C, H01L33/20|
|Sep 22, 2011||FPAY||Fee payment|
Year of fee payment: 4
|Feb 17, 2016||FPAY||Fee payment|
Year of fee payment: 8