|Publication number||US7610502 B2|
|Application number||US 11/493,422|
|Publication date||Oct 27, 2009|
|Filing date||Jul 25, 2006|
|Priority date||Nov 13, 2003|
|Also published as||US7065666, US7275172, US7278045, US7308594, US7350093, US7610503, US8127171, US20050108590, US20060117204, US20060265618, US20060265619, US20060265620, US20060265621, US20060277427, US20100023793, WO2005050842A2, WO2005050842A3|
|Publication number||11493422, 493422, US 7610502 B2, US 7610502B2, US-B2-7610502, US7610502 B2, US7610502B2|
|Inventors||Leel S. Janzen|
|Original Assignee||Micron Technology, Inc.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (32), Classifications (18), Legal Events (4)|
|External Links: USPTO, USPTO Assignment, Espacenet|
This application is a divisional of pending U.S. patent application Ser No. 11/331,300, filed Jan. 11, 2006, which is a divisional of U.S. patent application Ser. No. 10/713,587, filed Nov. 13, 2003, issued Jun. 20, 2006 as U.S. Pat. No. 7,065,666 B2.
The present invention relates generally to generating clock signals, and more specifically, to generating a delayed clock signal for use in synchronizing output circuitry of a synchronous device.
In synchronous integrated circuits, the integrated circuit is clocked by an external clock signal and performs operations at predetermined times relative the rising and falling edges of the applied clock signal. Examples of synchronous integrated circuits include synchronous memory devices such as synchronous dynamic random access memories (SDRAMs), synchronous static random access memories (SSRAMs), and packetized memories like SLDRAMs and RDRAMs, and include other types of integrated circuits as well, such as microprocessors. The timing of signals external to a synchronous memory device is determined by the external clock signal, and operations within the memory device typically must be synchronized to external operations. For example, data are placed on a data bus by the memory device in synchronism with the external clock signal, and consequently, the memory device must provide the data to the bus at the proper times. To provide the data at the correct times, an internal clock signal is developed in response to the external clock signal, and is typically applied to latches contained in the memory device to thereby clock the data onto the data bus. The internal clock signal and external clock must be synchronized to ensure the internal clock signal clocks the latches at the proper times to successfully output the data at the proper times.
To synchronize external and internal clock signals in modern synchronous memory devices, a number of different approaches have been considered and utilized, including delay-locked loops (DLLs), phased-locked loops (PLLs), and synchronous mirror delays (SMDs), as will be appreciated by those skilled in the art. As used herein, the term synchronized includes signals that are coincident and signals that have a desired delay relative to one another. Additionally, in the present description, “external” is used to refer to signals and operations outside of the memory device, and “internal” to refer to signals and operations within the memory device. Moreover, although the present description is directed to synchronous memory devices, the principles described herein are equally applicable to other types of synchronous integrated circuits.
The trimmable delay 108 is included in the output circuitry 100 to take advantage of device performance exceeding the published timing specifications for the device, typically in order to increase internal timing margins. In conventional SDRAM devices, the time from when a read command is first latched by the memory device to when data is latched by the output driver 102 and ready to be output in response to the CLKDEL signal, is generally a fixed time that is inherent to the memory device. The time is typically referenced as tAA. Another timing characteristic inherent to a memory device, which will be referenced herein as tOUT, is the time from when a transition of the CLKDEL signal is detected by the output driver 102 and when the DQ and DQS are made available at the external terminal for reading. A common timing specification related to tOUT is tAC, which is defined as the access window of the DQ relative to a transition of the external CLK signal. That is, valid DQ is guaranteed to be present at the external data terminal no later than tAC after a transition of the CLK signal. As generally known in the art, the actual performance of the memory device, as measured by tOUT, exceeds the published performance, which is guaranteed to be no longer than tAC.
As previously mentioned, where the performance of the memory device exceeds the published timing specifications of the memory device, internal timing margins for the memory device can be improved. One approach is to use internal delays, such as the trimmable delay 108, to increase timing margins for related internal timing parameters. In the specific case of data output circuitry, such as the output circuitry 100, the excess performance of the memory device provided by tOUT over the published performance specification of tAC is often taken advantage of to increase the timing margin for tAA. The trimmable delay 108 is trimmed to set the time delay tTRIM for the CLKDEL signal relative to the CLKDLL signal. With more time delay tTRIM, the margin for tAA is increased. That is, the time for data to be provided to the output driver 102 after a read command is registered is increased. For example, with respect to
Although DLLs are assumed to be stable and frequency independent, in many designs the DLL has a delay component that varies with the frequency of the input clock signal. For example, the delay of a DLL may be proportionate with clock frequency, resulting in an output clock signal, which ideally is synchronized with the input clock signal, that increasingly lags the input clock signal as the frequency of the input clock signal increases. In applications in memory devices that can operate at different clock frequencies, which many conventional memory devices can do, the varying delay introduced by a non-ideal DLL will affect the timing of internal circuitry that relies on the clock signal generated by the DLL. With respect to the output circuitry 100, the varying delay of the DLL 106 will ultimately affect the timing of when the DQ and DQS signals will be output by the data driver 102. For memory devices operating at higher frequencies, unless the skew added by the DLL 106 is accommodated, the memory device may fail to meet published timing specifications.
Further complicating the timing restrictions of a memory device is that memory devices that can operate at different clock frequencies have CAS (read) latency restrictions for operations at the various external clock frequencies, as well known. CAS latency is typically defined as the delay, in number of clock cycles, between the registration of a read command and the availability of the first bit of output data. Generally, CAS latency is a lower value for lower external clock frequencies (e.g., a CAS latency value of 2 for an external clock frequency of 133 MHz) and a higher value for higher external clock frequencies (e.g., a CAS latency value of 3 for an external clock frequency of 200 MHz). In this manner, the total time which a memory device has to complete a read operation can be maintained, to some extent, for operation at the different clock frequencies.
Typically, the varying delay introduced by the DLL 106 is accommodated by setting the delay of the trimmable delay 108 based on a “worst-case” timing scenario that still meets published timing specifications. That is, assuming that the DLL 106 introduces a delay that varies as described above, the delay of the trimmable delay 108 is set assuming the memory device is operated at the highest published clock frequency and having the shortest tAC specification. More specifically, in order for the memory device to still meet the shortest published tAC when operated at the highest published clock frequency, the delay of the trimmable delay 108 must be reduced to compensate for the increasing delay of the non-ideal DLL 106. However, as a result of reducing the delay time of the trimmable delay 108, the overall timing margin for tAA is decreased. Where the memory device is operated at a lower maximum operating clock frequency, such as for memory devices categorized in slower speed-grades, the margin is further decreased because the time delay introduced by the DLL 106 is less for lower external clock frequencies. As previously discussed, having greater tAA margin can have a positive affect on the yield of memory devices that meet published timing parameters. By decreasing the delay of the trimmable delay 108, memory devices that would have otherwise been acceptable under a more relaxed tAA requirement may now no longer meet the published timing specifications because of the shorter delay of the trimmable delay 108. Consequently, the yield of acceptable memory devices can be negatively affected by setting the trimmable delay 108 to a shorter delay time.
The relationship between the previously discussed internal timing for the various signals is illustrated in
Categorizing the same memory device at a slower speed-grade (i.e., having lower maximum operating frequency and relaxed tAC) also does not result in a memory device meeting the published specifications, as illustrated by
As illustrated by the timing diagrams of
According to one aspect of the present invention, a clock signal generator is provided. The clock signal generator includes a synchronizing circuit having an input terminal at which an input clock signal is applied and an output terminal at which a first delayed clock signal is provided. The clock signal generator further includes a delay circuit having an input coupled to the output of the synchronizing circuit, an output at which an output clock signal is provided, and a selection terminal for receiving a selection signal. The delay circuit provides an output clock signal having a delay with respect to the first delayed clock signal according to one of a plurality of programmable time delays selected in accordance with the selection signal. In another aspect of the invention a method of generating a clock signal is provided which includes synchronizing an internal clock signal to an external clock signal, and delaying the internal clock signal different amounts based on a selection value indicative of external clock frequency to provide the clock signal.
The memory device 300 includes a control logic and command decoder 334 receives a plurality of command and clocking signals over a control bus CONT, typically from an external circuit such as a memory controller (not shown). The command signals include a chip select signal CS*, a write enable signal WE*, a column address strobe signal CAS*, and a row address strobe signal RAS*, while the clocking signals include a clock enable signal CKE* and complementary clock signals CLK, CLK*, with the “*” designating a signal as being active low. The command signals CS*, WE*, CAS*, and RAS* are driven to values corresponding to a particular command, such as a read, write, or auto-refresh command. In response to the clock signals CLK, CLK*, the command decoder 334 latches and decodes an applied command, and generates a sequence of clocking and control signals that control the components 302-332 to execute the function of the applied command. The clock enable signal CKE enables clocking of the command decoder 334 by the clock signals CLK, CLK*. The command decoder 334 latches command and address signals at positive edges of the CLK, CLK* signals (i.e., the crossing point of CLK going high and CLK* going low), while the input registers 330 and data drivers 324 transfer data into and from, respectively, the memory device 300 in response to both edges of the data strobe signal DQS and thus at double the frequency of the clock signals CLK, CLK*. This is true because the DQS signal has the same frequency as the CLK, CLK* signals. The memory device 300 is referred to as a double-data-rate device because the data words DQ being transferred to and from the device are transferred at double the rate of a conventional SDRAM, which transfers data at a rate corresponding to the frequency of the applied clock signal. The detailed operation of the control logic and command decoder 334 in generating the control and timing signals is conventional, and thus, for the sake of brevity, will not be described in more detail.
Also included in the control logic 334 are mode registers 335. The mode registers 335 are programmed with values that define the mode of operation of the memory device 300. For example, the different modes of operation include the selection of a burst length, burst type, and an operating mode, as well known. A CAS latency value is also programmed in the mode registers 335. As previously discussed, the CAS latency is the delay, in clock cycles, between the registration of a read command and the availability of the first bit of output data. The CAS latency is generally related to the operating clock frequency in that a recommended CAS latency value is defined for the various operating clock frequencies of the memory device. As will be explained in more detail below, in one embodiment of the present invention the CAS latency value programmed in the mode registers 335 is used for selecting one of a plurality of different time delays to use in timing the output of data onto a data bus. In this manner, internal timing margins can be adjusted based on the clock frequency of operation, as indicated by the CAS latency value.
Further included in the memory device 300 is an address register 302 that receives row, column, and bank addresses over an address bus ADDR, with a memory controller (not shown) typically supplying the addresses. The address register 302 receives a row address and a bank address that are applied to a row address multiplexer 304 and bank control logic circuit 306, respectively. The row address multiplexer 304 applies either the row address received from the address register 302 or a refresh row address from a refresh counter 308 to a plurality of row address latch and decoders 310A-D. The bank control logic 306 activates the row address latch and decoder 310A-D corresponding to either the bank address received from the address register 302 or a refresh bank address from the refresh counter 308, and the activated row address latch and decoder latches and decodes the received row address. In response to the decoded row address, the activated row address latch and decoder 310A-D applies various signals to a corresponding memory bank 312A-D to thereby activate a row of memory cells corresponding to the decoded row address. Each memory bank 312A-D includes a memory-cell array having a plurality of memory cells arranged in rows and columns, and the data stored in the memory cells in the activated row is stored in sense amplifiers in the corresponding memory bank. The row address multiplexer 304 applies the refresh row address from the refresh counter 308 to the decoders 310A-D and the bank control logic circuit 306 uses the refresh bank address from the refresh counter when the memory device 300 operates in an auto-refresh or self-refresh mode of operation in response to an auto-refresh or self-refresh command being applied to the memory device 300, as will be appreciated by those skilled in the art.
A column address is applied on the ADDR bus after the row and bank addresses, and the address register 302 applies the column address to a column address counter and latch 314 which, in turn, latches the column address and applies the latched column address to a plurality of column decoders 316A-D. The bank control logic 306 activates the column decoder 316A-D corresponding to the received bank address, and the activated column decoder decodes the applied column address. Depending on the operating mode of the memory device 300, the column address counter and latch 314 either directly applies the latched column address to the decoders 316A-D, or applies a sequence of column addresses to the decoders starting at the column address provided by the address register 302. In response to the column address from the counter and latch 314, the activated column decoder 316A-D applies decode and control signals to an I/O gating and data masking circuit 318 which, in turn, accesses memory cells corresponding to the decoded column address in the activated row of memory cells in the memory bank 312A-D being accessed.
During data read operations, data being read from the addressed memory cells is coupled through the I/O gating and data masking circuit 318 to a read latch 320. The I/O gating and data masking circuit 318 supplies N bits of data to the read latch 320, which then applies two N/2 bit words to a multiplexer 322. In the embodiment of
During data write operations, an external circuit such as a memory controller (not shown) applies N/2 bit data words DQ, the strobe signal DQS, and corresponding data masking signals DM0-X on the data bus. A data receiver 328 receives each DQ word and the associated DM0-X signals, and applies these signals to input registers 330 that are clocked by the DQS signal. In response to a rising edge of the DQS signal, the input registers 330 latch a first N/2 bit DQ word and the associated DM0-X signals, and in response to a falling edge of the DQS signal the input registers latch the second N/2 bit DQ word and associated DM0-X signals. The input register 330 provides the two latched N/2 bit DQ words as an N-bit word to a write FIFO and driver 332, which clocks the applied DQ word and DM0-X signals into the write FIFO and driver in response to the DQS signal. The DQ word is clocked out of the write FIFO and driver 332 in response to the CLK signal, and is applied to the I/O gating and masking circuit 318. The I/O gating and masking circuit 318 transfers the DQ word to the addressed memory cells in the accessed bank 312A-D subject to the DM0-X signals, which may be used to selectively mask bits or groups of bits in the DQ words (i.e., in the write data) being written to the addressed memory cells.
The trimmable delays 411, 412, 413 can be trimmed to set respective time delays tTRIM1, tTRIM2, tTRIM3. When activated, the trimmable delays 411, 412, 413 provide an output clock signal having a respective delay relative to the CLKDLL signal. The resulting clock signal can be used as the delayed clock signal CLKDEL for triggering the output driver 102 to output data signals DQ and DQS signals. Selection of which one of the trimmable delays 411, 412, 413 to activate is through the use of the CAS latency value LAT(A), LAT(B), LAT(C) programmed in the mode register 335 of the control logic 334 (
The delay clock generator 400 provides the flexibility to tailor a time delay for the CLKDEL signal to accommodate different external clock frequencies at which a memory device in which the delay clock generator 400 is located can be operated. As previously discussed, the external clock frequency at which a memory device is operated is typically related to the CAS latency value that is programmed in the mode register 335. By selecting which trimmable delay 411, 412, 413 to activate based on the CAS latency value, a different time delay can be added to the CLKDLL signal for different external clock frequencies. In one embodiment, the time delays are trimmed such that for lower CAS latency values (i.e., lower external clock frequencies), longer time delays are provided. As will be explained in more detail below, providing different time delays can increase the yield of memory devices categorized for slower speed-grades; which are limited to lower maximum external clock frequencies and have relaxed tAC timing. Since the amount of delay between the CLKDLL signal and the CLKDEL signal is not limited to the “Worst-case” scenario, which assumes the highest possible external clock frequency and the shortest tAC, the relaxed timing resulting from the lower maximum external clock frequency can be advantageously used to improve the internal timing margin of the memory device. As a result, those memory devices that marginally fail the published timing specifications under the trimmed delay for the worst-case timing situation may be able to meet the published timing specifications under more relaxed internal timing, as provided by using a different time delay between the CLKDEL signal with respect to the CLK signal for the lower maximum operating clock frequency.
The delay clock generator 400 operates in much the same manner as the DLL 106, and the trimmable delay 108 previously described with respect to the output circuitry 100 of
Advantages provided by the delay clock generator 400 will be explained with reference to
In contrast to the conventional memory devices, the delay clock generator 400 can adjust to provide greater internal timing margin through the use of the plurality of trimmable delays which can be selected based on the CAS latency value programmed in the mode register 335.
As a result of the time delay tTRIM2 being longer than the time delay tTRIM1, by the time the CLKDEL signal makes its positive transition at the time T3, a valid DATA signal is already latched at the input of the output driver 102 at a previous time T2. Valid DQ signals will be provided by the output driver 102 at a time T4, which is a time tOUT after the CLKDEL signal transitions. As shown in
It will be appreciated that the design and operation of the functional blocks described herein can be conventional, and are well known to those ordinarily skilled in the art. Moreover, various modifications can be made to the specific embodiment described herein without departing from the scope of the present invention. For example, in one embodiment of the present invention, the number of trimmable delays included in the delay clock generator corresponds to the number of different latencies available for a memory device. Additionally, the trimming mechanism used for the trimmable delays can be through the use of antifuses, or alternatively, through the use of fuses trimmed or programmed according to conventional methods. Another example is modifying the trimmable delay structure of the delay clock generator such that instead of several parallel delay paths, one of which is selected for operation based on the CAS latency value, a series of delays can be trimmed and then selected time delay can be increased or decreased based on the CAS latency value. The scope of the present invention is not limited to the particular embodiments described herein.
From the foregoing it will be appreciated that, although specific embodiments of the invention have been described herein for purposes of illustration, various modifications may be made without deviating from the spirit and scope of the invention. Accordingly, the invention is not limited except as by the appended claims.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US5560000||Jun 7, 1995||Sep 24, 1996||Texas Instruments Incorporated||Time skewing arrangement for operating memory in synchronism with a data processor|
|US5751655||Jan 23, 1997||May 12, 1998||Mitsubishi Denki Kabushiki Kaisha||Synchronous type semiconductor memory device having internal operation timings determined by count values of an internal counter|
|US5754838||Dec 21, 1995||May 19, 1998||Hitachi, Ltd.||Synchronous dynamic memory device capable of operating over wide range of operation frequencies|
|US5771264||Jan 7, 1997||Jun 23, 1998||Altera Corporation||Digital delay lock loop for clock signal frequency multiplication|
|US5835956||Mar 17, 1997||Nov 10, 1998||Samsung Electronics Co., Ltd.||Synchronous dram having a plurality of latency modes|
|US5886918||Jul 27, 1998||Mar 23, 1999||Hitachi, Ltd.||Semiconductor integrated circuit device having synchronous function with a plurality of external clocks|
|US6011732 *||Aug 20, 1997||Jan 4, 2000||Micron Technology, Inc.||Synchronous clock generator including a compound delay-locked loop|
|US6020773||Apr 29, 1998||Feb 1, 2000||Mitsubishi Denki Kabushiki Kaisha||Clock signal generator for generating a plurality of clock signals with different phases, and clock phase controller using the same|
|US6026050||Feb 10, 1999||Feb 15, 2000||Micron Technology, Inc.||Method and apparatus for adaptively adjusting the timing of a clock signal used to latch digital signals, and memory device using same|
|US6061296||Aug 17, 1998||May 9, 2000||Vanguard International Semiconductor Corporation||Multiple data clock activation with programmable delay for use in multiple CAS latency memory devices|
|US6151270||Aug 14, 1998||Nov 21, 2000||Samsung Electronics Co., Ltd.||Integrated circuit memory devices having programmable latency periods and methods of operating same|
|US6262938||Mar 3, 2000||Jul 17, 2001||Samsung Electronics Co., Ltd.||Synchronous DRAM having posted CAS latency and method for controlling CAS latency|
|US6359579||Feb 17, 2000||Mar 19, 2002||Advanced Micro Devices, Inc.||Digital logic correction circuit for a pipeline analog to digital (A/D) converter|
|US6415339||Dec 28, 1998||Jul 2, 2002||Rambus Inc.||Memory device having a plurality of programmable internal registers and a delay time register|
|US6426900||Jul 19, 2001||Jul 30, 2002||Mitsubishi Denki Kabushiki Kaisha||Synchronous semiconductor memory device performing data output in synchronization with external clock|
|US6438067||Feb 2, 2001||Aug 20, 2002||Mitsubishi Denki Kabushiki Kaisha||Clock generating circuit ensuring a wide lock-allowing frequency range and allowing reduction in layout area as well as a semiconductor device provided with the same|
|US6493829||Sep 22, 1999||Dec 10, 2002||Mitsubishi Denki Kabushiki Kaisha||Semiconductor device enable to output a counter value of an internal clock generation in a test mode|
|US6529423||Feb 22, 2000||Mar 4, 2003||Samsung Electronics Co., Ltd.||Internal clock signal delay circuit and method for delaying internal clock signal in semiconductor device|
|US6542416||Nov 2, 2001||Apr 1, 2003||Rambus Inc.||Methods and arrangements for conditionally enforcing CAS latencies in memory devices|
|US6552955||Oct 30, 2001||Apr 22, 2003||Mitsubishi Denki Kabushiki Kaisha||Semiconductor memory device with reduced power consumption|
|US6553472||Jan 12, 2001||Apr 22, 2003||Sun Microsystems, Inc.||Method for programming clock delays, command delays, read command parameter delays, and write command parameter delays of a memory controller in a high performance microprocessor|
|US6570800||Jan 10, 2001||May 27, 2003||Hitachi, Ltd.||High speed clock synchronous semiconductor memory in which the column address strobe signal is varied in accordance with a clock signal|
|US6621315||May 1, 2002||Sep 16, 2003||Samsung Electronics Co., Ltd.||Delay locked loop circuit and method having adjustable locking resolution|
|US6625242 *||Dec 17, 1999||Sep 23, 2003||Samsung Electronics Co., Ltd.||Delay locked loops and methods that shift the phase of a delayed clock signal based on a reference phase value|
|US6920080||Nov 6, 2003||Jul 19, 2005||Samsung Electronics Co., Ltd.||Methods for generating output control signals in synchronous semiconductor memory devices and related semiconductor memory devices|
|US6958658||Mar 25, 2003||Oct 25, 2005||Intel Corporation||Circuit and method for generating a clock signal|
|US7035366||Jun 11, 2002||Apr 25, 2006||Renesas Technology Corp.||Delay locked loop circuit and its control method|
|US7068084||Nov 6, 2003||Jun 27, 2006||Samsung Electronics, Co., Ltd.||Delay locked loop capable of compensating for delay of internal clock signal by variation of driving strength of output driver in semiconductor memory device|
|US7134034 *||Oct 15, 2003||Nov 7, 2006||Integrated Device Technology, Inc.||Data paths with receiver timing fixable to a downstream stage and methods of operation thereof|
|US7137022||Oct 23, 2003||Nov 14, 2006||Elpida Memory, Inc.||Timing adjustment circuit and semiconductor device including the same|
|US20030218921||Feb 26, 2003||Nov 27, 2003||Peter Schrogmeier||Latency time switch for an S-DRAM|
|US20040260961||Jun 23, 2003||Dec 23, 2004||Chengting Zhao||Synchronized serial interface|
|U.S. Classification||713/401, 713/400|
|International Classification||G11C7/10, G06F1/04, G06F1/12|
|Cooperative Classification||G11C7/1072, G06F1/10, G06F1/04, G11C2207/2254, G11C7/1066, G11C7/222, G06F1/12|
|European Classification||G06F1/04, G11C7/10S, G11C7/10R7, G11C7/22A, G06F1/12, G06F1/10|
|Jan 4, 2010||AS||Assignment|
Owner name: ROUND ROCK RESEARCH, LLC,NEW YORK
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:023786/0416
Effective date: 20091223
Owner name: ROUND ROCK RESEARCH, LLC, NEW YORK
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:023786/0416
Effective date: 20091223
|Jan 12, 2010||CC||Certificate of correction|
|Mar 7, 2013||FPAY||Fee payment|
Year of fee payment: 4
|Jun 9, 2017||REMI||Maintenance fee reminder mailed|