|Publication number||US7639345 B2|
|Application number||US 11/252,230|
|Publication date||Dec 29, 2009|
|Filing date||Oct 18, 2005|
|Priority date||Oct 18, 2005|
|Also published as||US20070085987|
|Publication number||11252230, 252230, US 7639345 B2, US 7639345B2, US-B2-7639345, US7639345 B2, US7639345B2|
|Inventors||Joost Jeroen Ottens, Aschwin Lodewijk Hendricus Johannes Van Meer, Wim Tjibbo Tel, Jacob Willem Vink, Rene Theodorus Petrus Compen, Petrus Johannes Gerrits|
|Original Assignee||Asml Netherlands B.V.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (16), Classifications (12), Legal Events (2)|
|External Links: USPTO, USPTO Assignment, Espacenet|
The present invention relates to a lithographic apparatus and a height detecting apparatus for a lithographic apparatus.
A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that instance, a patterning device, which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the IC. This pattern can be transferred onto a target portion (e.g. comprising part of one, one, or several dies) on a substrate (e.g. a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. In general, a single substrate will contain a network of adjacent target portions that are successively patterned. Known lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion at one time, and so-called scanners, in which each target portion is irradiated by scanning the pattern through a radiation beam in a given direction (the “scanning”-direction) while synchronously scanning the substrate parallel or anti-parallel to this direction. It is also possible to transfer the pattern from the patterning device to the substrate by imprinting the pattern onto the substrate.
In current designs, a lack of wafer flatness and contamination on a wafer or generally on an object to be placed in a radiation beam, including but not restricted to substrates, wafers, fiducials and masks, negatively affects the imaging quality of the micropatterns that are imaged on target locations of the substrate. Likewise, contamination between the objects and supports that support the object while being irradiated can seriously impact imaging quality and cause deflection of the substrate.
Another problem affecting image resolution may be a damaged support structure, which, through wear or incidents, may have zones or specific spot locations that are not within specification for providing a flat support. However, the detection of such unflatnesses may be very difficult and time consuming.
Conventionally, a height map is used to drive the plane of focus of an imaging beam to provide well focused imaging at a desired height level. However, the height map created from a top surface of a (test) substrate can also be used to detect impurities as is illustrated in published European Patent Application Nos. EP1457828 or EP1093022. However, certain small impurities on the support structure can not be detected because they cause insufficient height variation. Yet, these impurities can cause distortion of the wafer which affects overlay accuracy and imaging quality.
U.S. Pat. No. 5,559,582 discusses a cleaning tool for cleaning impurities from a support structure. U.S. Pat. No. 6,198,982 discusses an impurity detection method by sensing a height deviation from a reference plane. Published Japanese Patent Application No. JP2000/252187 discusses placement of a wafer at a reduced clamping pressure level for mitigating the generation of dust.
It is desirable to provide a system and method to be better able to detect impurities on objects or a support that could affect image quality and overlay. To this end, the invention provides a height detecting apparatus for a lithographic apparatus. The height mapping apparatus includes a height mapping unit for providing at least one height map of a top surface of an object to be placed in a radiation beam of the lithographic apparatus, the object to be clamped by a clamping force applied thereto on a support constructed to support the object. The height mapping apparatus also includes a control unit for controlling the mapping unit to provide the at least one height map of the object relative to at least two different clamping pressure levels.
Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which:
The illumination system IL may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, for directing, shaping, or controlling radiation.
The support structure MT supports, i.e. bears the weight of, the patterning device MA. It holds the patterning device in a manner that depends on the orientation of the patterning device, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning device is held in a vacuum environment. The support structure can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device. The support structure may be a frame or a table, for example, which may be fixed or movable as required. The support structure may ensure that the patterning device is at a desired position, for example with respect to the projection system. Any use of the terms “reticle” or “mask” herein may be considered synonymous with the more general term “patterning device.”
The term “patterning device” as used herein should be broadly interpreted as referring to any device that can be used to impart a radiation beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the radiation beam may not exactly correspond to the desired pattern in the target portion of the substrate, for example if the pattern includes phase-shifting features or so called assist features. Generally, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
The patterning device may be transmissive or reflective. Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in a radiation beam which is reflected by the mirror matrix.
The term “projection system” as used herein should be broadly interpreted as encompassing any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic and electrostatic optical systems, or any combination thereof, as appropriate for the exposure radiation being used, or for other factors such as the use of an immersion liquid or the use of a vacuum. Any use of the term “projection lens” herein may be considered as synonymous with the more general term “projection system”.
As here depicted, the apparatus is of a transmissive type (e.g. employing a transmissive mask). Alternatively, the apparatus may be of a reflective type (e.g. employing a programmable mirror array of a type as referred to above, or employing a reflective mask).
The lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In such “multiple stage” machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
The lithographic apparatus may also be of a type wherein at least a portion of the substrate may be covered by a liquid having a relatively high refractive index, e.g. water, so as to fill a space between the projection system and the substrate. An immersion liquid may also be applied to other spaces in the lithographic apparatus, for example, between the mask and the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems. The term “immersion” as used herein does not mean that a structure, such as a substrate, must be submerged in liquid, but rather only means that liquid is located between the projection system and the substrate during exposure.
The illuminator IL may comprise an adjuster AD for adjusting the angular intensity distribution of the radiation beam. Generally, at least the outer and/or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted. In addition, the illuminator IL may comprise various other components, such as an integrator IN and a condenser CO. The illuminator may be used to condition the radiation beam, to have a desired uniformity and intensity distribution in its cross-section.
The radiation beam B is incident on the patterning device (e.g., mask MA), which is held on the support structure (e.g., mask table MT), and is patterned by the patterning device. Having traversed the mask MA, the radiation beam B passes through the projection system PS, which focuses the beam onto a target portion C of the substrate W. With the aid of the second positioner PW and position sensor IF (e.g. an interferometric device, linear encoder or capacitive sensor), the substrate table WT can be moved accurately, e.g. so as to position different target portions C in the path of the radiation beam B. Similarly, the first positioner PM and another position sensor (which is not explicitly depicted in
The depicted apparatus could be used in at least one of the following modes:
1. In step mode, the mask table MT and the substrate table WT are kept essentially stationary, while an entire pattern imparted to the radiation beam is projected onto a target portion C at one time (i.e. a single static exposure). The substrate table WT is then shifted in the X and/or Y direction so that a different target portion C can be exposed. In step mode, the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure.
2. In scan mode, the mask table MT and the substrate table WT are scanned synchronously while a pattern imparted to the radiation beam is projected onto a target portion C (i.e. a single dynamic exposure). The velocity and direction of the substrate table WT relative to the mask table MT may be determined by the (de-)magnification and image reversal characteristics of the projection system PS. In scan mode, the maximum size of the exposure field limits the width (in the non-scanning direction) of the target portion in a single dynamic exposure, whereas the length of the scanning motion determines the height (in the scanning direction) of the target portion.
3. In another mode, the mask table MT is kept essentially stationary holding a programmable patterning device, and the substrate table WT is moved or scanned while a pattern imparted to the radiation beam is projected onto a target portion C. In this mode, generally a pulsed radiation source is employed and the programmable patterning device is updated as required after each movement of the substrate table WT or in between successive radiation pulses during a scan. This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning device, such as a programmable mirror array of a type as referred to above.
As further demonstrated in
Thus, at a lower clamping level, the wafer flatness tends to be less, specifically, the high frequency height variations tend to indicate impurities on the object 7 or support 9.
The invention is also applicable as a difference measurement detecting a relative height variation of the wafer on at least two differing clamping levels. Since the wafer deformation is depending on the stiffness, the variation of clamping pressure will result in a local height variation where the stiffness is locally changed. Such stiffness changes, especially the high frequency part thereof, indicate the presence of impurities. High-frequency variations, in contrast to low-frequency variations, indicate variations that are small compared to the object dimension, typically, in the order of object thickness. For a wafer, a typical bending length can be ˜3 mm, i.e ˜4× the object thickness. The factor 4 is dependent on the E-modulus and the thickness of the substrate and of the stiffness of the supporting burls.
Regarding the difference variation, the stiffness measurement may be indicative of the type of impurity and the position thereof. That is, a height variation indicating a relative high local stiffness is indicative of an impurity located at the backside of the support structure 9, that is, the side that is facing the lower support structure 11. In contrast, a height variation indicating a relative low local stiffness indicates an impurity located on the front side of the support structure 9, that is, the side facing the backside of the object 7. It will be appreciated that even for backside impurities, the detected local stiffness will also be lower than a generally clean area.
Also, the spot size of the impurity may also be indicative of the presence thereof, wherein larger spot sizes will be typically located on the backside, and smaller spot sizes will be present on the front side.
Furthermore, different stiffnesses may be indicative of the presence of a physical impurity particle (relative low stiffness), or the presence of an object defect or support defect (relative high stiffness).
As shown in
At this reduced clamping pressure level, impurities tend to be enlarged in diameter with a factor 2 to 5, thus, being able to be detected far more easily. The height maps were made with an Zygo interferometer. Using various levels of vacuum and analyzing the change in behavior of the various spots, analysis software can be constructed to estimate whether contamination is present on top- or back side of the wafer table. The spot-size will vary differently as a function of vacuum level because the influence of contamination on back-side will influence the height map via a different stiffness (wafer+wafer table) as contamination on top-side (wafer table only). Typical reduced clamping force levels will be 70% or less, for instance, in ranges of vacuum pressure levels between 0 and 450 mbar below ambient pressure.
Combinations and/or variations on the above described modes of use or entirely different modes of use may also be employed.
Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat-panel displays, liquid-crystal displays (LCDs), thin-film magnetic heads, etc. The skilled artisan will appreciate that, in the context of such alternative applications, any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion”, respectively. The substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist), a metrology tool and/or an inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.
Although specific reference may have been made above to the use of embodiments of the invention in the context of optical lithography, it will be appreciated that the invention may be used in other applications, for example imprint lithography, and where the context allows, is not limited to optical lithography. In imprint lithography a topography in a patterning device defines the pattern created on a substrate. The topography of the patterning device may be pressed into a layer of resist supplied to the substrate whereupon the resist is cured by applying electromagnetic radiation, heat, pressure or a combination thereof. The patterning device is moved out of the resist leaving a pattern in it after the resist is cured.
The terms “radiation” and “beam” as used herein encompass all types of electromagnetic radiation, including ultraviolet (UV) radiation (e.g. having a wavelength of or about 365, 355, 248, 193, 157 or 126 nm) and extreme ultra-violet (EUV) radiation (e.g. having a wavelength in the range of 5-20 nm), as well as particle beams, such as ion beams or electron beams.
The term “lens”, where the context allows, may refer to any one or combination of various types of optical components, including refractive, reflective, magnetic, electromagnetic and electrostatic optical components.
While specific embodiments of the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. For example, the invention may take the form of a computer program containing one or more sequences of machine-readable instructions describing a method as disclosed above, or a data storage medium (e.g. semiconductor memory, magnetic or optical disk) having such a computer program stored therein.
The descriptions above are intended to be illustrative, not limiting. Thus, it will be apparent to one skilled in the art that modifications may be made to the invention as described without departing from the scope of the claims set out below.
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|JP2000058494A||Title not available|
|JP2000252187A||Title not available|
|JP2003022993A||Title not available|
|JP2004141704A||Title not available|
|KR20010066292A||Title not available|
|KR20010083591A||Title not available|
|U.S. Classification||355/75, 355/72|
|International Classification||G03B27/58, G03B27/62|
|Cooperative Classification||G03F7/70916, G03F9/7003, G03F7/7065, G03F7/707|
|European Classification||G03F7/70L10H, G03F7/70N2, G03F9/70B, G03F7/70P8B|
|Jan 20, 2006||AS||Assignment|
Owner name: ASML NETHERLANDS B.V., NETHERLANDS
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:OTTENS, JOOST JEROEN;VAN MEER, ASCHWIN LODEWIJK HENRICUSJOHANNES;TEL, WIM TJIBBO;AND OTHERS;REEL/FRAME:017489/0070
Effective date: 20051212
|Mar 7, 2013||FPAY||Fee payment|
Year of fee payment: 4