US7672648B1 - System for linear amplitude modulation - Google Patents
System for linear amplitude modulation Download PDFInfo
- Publication number
- US7672648B1 US7672648B1 US11/167,943 US16794305A US7672648B1 US 7672648 B1 US7672648 B1 US 7672648B1 US 16794305 A US16794305 A US 16794305A US 7672648 B1 US7672648 B1 US 7672648B1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C1/00—Amplitude modulation
- H03C1/02—Details
- H03C1/06—Modifications of modulator to reduce distortion, e.g. by feedback, and clearly applicable to more than one type of modulator
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
- H03F1/0216—Continuous control
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
- H03F3/45085—Long tailed pairs
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
- H03F3/45098—PI types
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers without distortion of the input signal
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
- H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/324—An amplitude modulator or demodulator being used in the amplifier circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/435—A peak detection being used in a signal measuring circuit in a controlling circuit of an amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45362—Indexing scheme relating to differential amplifiers the AAC comprising multiple transistors parallel coupled at their gates and drains only, e.g. in a cascode dif amp, only those forming the composite common source transistor
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0491—Circuits with frequency synthesizers, frequency converters or modulators
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
Description
where Imax is the maximum collector current of transistor Q1. The maximum current is important because, in practice, the active device (Q1) should operate at a nominal level that is about one-half the maximum level to ensure linear operation.
where Pout(pk) is the instantaneous peak output power.
where PRF is the RF output power and Pdc is the dc power used. The described linear amplifier—with continuous output current flow—achieves at best 50% efficiency. It's possible to lower the dc power used and thereby improve efficiency by limiting the time the output current flows.
where Vam is the amplitude modulation (AM) signal. This relationship is extremely linear—even more so than the gain relationship of class A/AB amplifiers. Unfortunately, as the amplitude modulation voltage Vam is reduced, the gain stage and active device eventually saturate. This proves problematic for bipolar transistors (because it forward biases the base-collector junction which may harm the device) and for field effect transistors (since the device pushes into its linear region where its gain drops). Therefore the collector voltage for bipolar transistors and the drain voltage of field affect transistors must be limited. Severe phase shifts to the signal also occur near saturation and must be avoided because these produce spectral re-growth. As a result, the useful range for this type of amplitude modulation is approximately 20 dB.
P 2 =P MAX −ΔP 2
where PMAX identifies the maximum output power level and ΔP2 corresponds to the detector range.
which essentially describes the AM signal in the range of P1 to P2.
where μ is the scaling factor. It's possible that the scaling factor better fits a logarithmic function whereby the VGA* signal becomes;
μ(PA*)→(PA*)μ
In either case, the scaling factor μ is always less than one.
where k is the power amplifier control gain, α is the detector gain, and p1-p2 are the pole frequencies of the
where vrf(pk) is the peak transmit signal, less any coupling loss. Likewise, the detector is characterized by;
which is a linear relationship. Note that the pole frequency p2 of the detector (and any other circuit) is intentionally set much higher than the pole frequency p1 of the low pass filter. As a result, the transfer function for the feedback loop simplifies to;
where β is the dc gain equal to;
and p1(1+αk) is the effective or dominant pole frequency of the system. With these conditions, the low pass filter not only stabilizes the feedback loop but also removes the carrier signal extracted by the detector. Furthermore, this effective pole frequency sets the delay of the amplitude modulation signal.
where the 3 dB bandwidth (f3 dB) is necessarily greater than the carrier frequency. This results in an insignificant delay compared to the rate of the amplitude modulation signal. Simultaneously, the amplitude modulation signal (in analog form) is also applied to the analog signal processing circuit and power amplifier control loop.
where p3 represents the pole frequency and equals p1 (1+αfl ). This also corresponds to the pole frequency for the
V be1 =I Tx R 1 +V be2
where ITx is the power control signal (and is proportional to the required gain). This equation can be rewritten as;
where VT is the thermal voltage.
where iC1 and IS1 are the collector and saturation currents of the transistor, respectively, vrf is the input signal with amplitude A, VB is the base bias voltage, and vdet is the output voltage developed across capacitor C1. The peaks of the input signal are held by capacitor C1, although some droop Δv occurs between these peaks, with;
as shown in the graph provided by
i 3 =I 3 +i det i 4 =I 4 −i det
where i3 and i4 are the collector currents of transistors Q3 and Q4, respectively. The current idet is described by;
for vdet less than or equal to I4R3.
which is cross-coupled to the previous outputs (i3 and i4). Since current source I5 is significantly smaller than current sources I3 and I4, the cross-coupled currents actually reduce the transconductance amplifier's gain at low input levels. This in turn effectively reduces the offset produced by the detector and extends its range beyond 30 dB to approximately 35 dB as illustrated by the graph shown in
Claims (42)
VGA*=AM for AM<(P2−TX);
VGA*=P2+u(PA*) for (P2−TX)>=AM<=(P1−TX); and
VGA*=P2+u(Delta P2)+(AM−P1) for AM>(P1−TX); and
PA*=P2 for AM<(P2−TX)
PA*=AM+TX for (P2−TX)>=AM<=(P1−TX); and
PA*=P1 for AM>(P1−TX); and
VGA*=AM for AM<(P2−TX);
VGA*=P2+u(PA*) for (P2−TX)>=AM<=(P1−TX); and
VGA*=P2+u(Delta P2)+(AM−P1) for AM>(P1−TX); and
PA*=P2 for AM<(P2−TX)
PA*=AM+TX for (P2−TX)>=AM<=(P1−TX); and
PA*=P1 for AM>(P1−TX); and
Priority Applications (1)
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US11/167,943 US7672648B1 (en) | 2004-06-26 | 2005-06-27 | System for linear amplitude modulation |
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US58343104P | 2004-06-26 | 2004-06-26 | |
US11/167,943 US7672648B1 (en) | 2004-06-26 | 2005-06-27 | System for linear amplitude modulation |
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US7672648B1 true US7672648B1 (en) | 2010-03-02 |
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Cited By (30)
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US20070178859A1 (en) * | 2004-10-22 | 2007-08-02 | Parkervision, Inc. | Systems and methods of RF power transmission, modulation, and amplification, including cartesian 4-branch embodiments |
US20080285681A1 (en) * | 2007-05-18 | 2008-11-20 | Sorrells David F | Systems and Methods of RF Power Transmission, Modulation, and Amplification |
US20090203334A1 (en) * | 2008-02-13 | 2009-08-13 | Broadcom Corporation | Rf polar transmitter with controlled amplitude modulation and methods for use therewith |
US20090207896A1 (en) * | 2008-02-14 | 2009-08-20 | Broadcom Corporation | Configurable load impedance for power amplifier predistortion calibration |
US20090207936A1 (en) * | 2008-02-14 | 2009-08-20 | Broadcom Corporation | Real and complex spectral shaping for spectral masks improvements |
US20100075623A1 (en) * | 2007-06-19 | 2010-03-25 | Parkervision, Inc. | Systems and Methods of RF Power Transmission, Modulation, and Amplification, Including Embodiments for Controlling a Transimpedance Node |
US20100201438A1 (en) * | 2005-10-12 | 2010-08-12 | Stmicroelectronics S.R.I. | Notch filter and apparatus for receiving and transmitting radio-frequency signals incorporating same |
US20100253426A1 (en) * | 2007-12-17 | 2010-10-07 | Huawei Technologies Co., Ltd. | High-Efficiency Power Amplifier |
US20110193630A1 (en) * | 2007-06-19 | 2011-08-11 | Sorrells David F | Systems and Methods of RF Power Transmission, Modulation, and Amplification, Including Blended Control Embodiments |
WO2012047814A1 (en) | 2010-10-07 | 2012-04-12 | Apple Inc. | Wireless transceiver with amplifier bias adjusted based on modulation scheme and transmit power feedback |
US8233858B2 (en) | 2004-10-22 | 2012-07-31 | Parkervision, Inc. | RF power transmission, modulation, and amplification embodiments, including control circuitry for controlling power amplifier output stages |
US8334722B2 (en) | 2007-06-28 | 2012-12-18 | Parkervision, Inc. | Systems and methods of RF power transmission, modulation and amplification |
US20130324062A1 (en) * | 2012-06-01 | 2013-12-05 | Qualcomm Incorporated | Power detector with temperature compenstation |
US8755454B2 (en) | 2011-06-02 | 2014-06-17 | Parkervision, Inc. | Antenna control |
US8897729B1 (en) * | 2010-11-19 | 2014-11-25 | Marvell International Ltd. | Closed-loop power control using multiple feedback loops |
US8913970B2 (en) | 2010-09-21 | 2014-12-16 | Apple Inc. | Wireless transceiver with amplifier bias adjusted based on modulation scheme |
US20150188501A1 (en) * | 2013-12-30 | 2015-07-02 | Samsung Electro-Mechanics Co., Ltd. | Power amplifying apparatus |
US9106500B2 (en) | 2006-04-24 | 2015-08-11 | Parkervision, Inc. | Systems and methods of RF power transmission, modulation, and amplification, including embodiments for error correction |
US9106316B2 (en) | 2005-10-24 | 2015-08-11 | Parkervision, Inc. | Systems and methods of RF power transmission, modulation, and amplification |
US9467095B2 (en) | 2014-10-13 | 2016-10-11 | Intel Corporation | Switchable dual core power amplifier |
US9608677B2 (en) | 2005-10-24 | 2017-03-28 | Parker Vision, Inc | Systems and methods of RF power transmission, modulation, and amplification |
US10278131B2 (en) | 2013-09-17 | 2019-04-30 | Parkervision, Inc. | Method, apparatus and system for rendering an information bearing function of time |
US10651876B1 (en) * | 2019-06-12 | 2020-05-12 | Innophase Inc. | System and method for dividing the carrier center frequency of an RF modulated signal by a non-integer divisor |
US10826738B2 (en) | 2019-01-07 | 2020-11-03 | Innophase Inc. | Systems and methods for maximizing power efficiency of a digital power amplifier in a polar transmitter |
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