|Publication number||US7687807 B2|
|Application number||US 11/834,044|
|Publication date||Mar 30, 2010|
|Filing date||Aug 6, 2007|
|Priority date||Sep 29, 2006|
|Also published as||US20080080221|
|Publication number||11834044, 834044, US 7687807 B2, US 7687807B2, US-B2-7687807, US7687807 B2, US7687807B2|
|Inventors||Jae Bon KOO, Seong Hyun Kim, Kyung Soo Suh, Chan Hoe KU, Sang Chul Lim, Jung Hun Lee|
|Original Assignee||Electronics And Telecommunications Research Institute|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (34), Non-Patent Citations (10), Referenced by (19), Classifications (8), Legal Events (4)|
|External Links: USPTO, USPTO Assignment, Espacenet|
This application claims priority to and the benefit of Korean Patent Application No. 2006-96247, filed Sep. 29, 2006, the disclosure of which is incorporated herein by reference in its entirety.
1. Field of the Present Invention
The present invention relates to an inverter comprising a single type transistor, and more particularly, to an organic semiconductor inverter which can be manufactured using an organic semiconductor transistor on a plastic substrate.
2. Discussion of Related Art
Organic field effect transistors have attracted attention as a next generation device because they can be manufactured through a simple process compared to that for the conventional silicon transistors and manufactured on a plastic substrate which is flexible due to its low processing temperature. The organic field effect transistors are mainly used as a switching element of a flexible display or in a circuit such as an RF-ID circuit. When the organic field effect transistor is used as a pixel driving switch of a display, a single polar transistor (for example, a p-type transistor) may just be appropriate, but when it is used as a circuit device, a CMOS transistor which is a combination of p-type and n-type transistors may be mostly appropriate in aspects of power consumption and operating speed.
However, since organic semiconductors have not had stable characteristics and reliability with respect to an n-type device so far, inverters are generally formed to have p-type single characteristics.
The D-inverter type of
Accordingly, to embody the devices having different threshold voltage characteristics by locations in the structure of
Moreover, a depletion load makes width/length (W/L) of a transistor large, and an enhancement driver makes the W/L thereof small, and thereby current may be controlled by transistor size effect. Furthermore, passivation of an organic semiconductor still remains as a problem that has to be solved for commercialization.
The present invention is directed to a D-inverter structure having a simple process and improved characteristics.
In particular, the present invention is directed to a stable D-inverter structure comprising an organic semiconductor transistor.
The present invention is also directed to a D-inverter structure comprising an organic semiconductor transistor having excellent depletion characteristics.
The present invention is drastically improving a conventional method of manufacturing an inverter comprising a depletion load and an enhancement driver using transistor width/length (W/L). According to the conventional method, the inverter can be designed and manufacture after all transistor characteristics by W/Ls are obtained to optimally ensure conditions because a transistor having large W/L is used as the depletion load since large current flows on a gate voltage condition of VG=0V, and a transistor having small W/L is used as the enhancement driver, and there is a limit to a degree of integration because the depletion load is generally designed large. Thus, the present invention proposes new structure and manufacturing method of an inverter using a p-type organic semiconductor transistor.
One aspect of the present invention provides an inverter comprising a driver transistor having a bottom gate transistor structure and a load transistor having a top gate transistor structure.
Another aspect of the present invention provides an inverter comprising: a gate electrode of a driver transistor formed on a substrate; a first insulating layer covering the gate electrode of the driver transistor; a source electrode of a driver transistor, a single electrode forming a drain electrode of the driver transistor and a source electrode of a load transistor, and a drain electrode of the load transistor, all of them being formed on the first insulating layer; an organic semiconductor layer formed on the first insulating layer exposed between the source and drain electrodes; a second insulating layer covering the source and drain electrodes and the organic semiconductor layer; and a top gate electrode of the load transistor formed on the second insulating layer.
The above and other features and advantages of the present invention will become more apparent to those of ordinary skill in the art by describing in detail exemplary embodiments thereof with reference to the attached drawings in which:
The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the present invention are shown. The present invention may be embodied in various forms and not be limited to the exemplary embodiments described herein.
The inverter illustrated in
The driver transistor formed on the left side of
Meanwhile, the load transistor formed on the right side of
The inverter of
Here, the drain electrode of the driver transistor in the illustrated structure is formed of the same layer 44 as the source electrode of the load transistor, and the gate electrode 62 of the load transistor is electrically and directly connected to the drain electrode of the driver transistor according to a manufacturing process. Thus, a separate connection process for constituting a D-inverter is not necessary. To this end, a proper contact hole may be formed to be electrically connected to the single layer 44 which is the source electrode of the load transistor and the drain electrode of the driver transistor during deposition of the top gate electrode 62 of the load transistor when the second insulating layer 50 is patterned.
The structure in which the drain electrode of the driver transistor and the source electrode of the load transistor are formed of the same layer 44 may easily set width/length (W/L) of the driver and load transistors equal to each other.
Expanding the idea described above, it is possible to make a double gate structure having more excellent characteristics as illustrated in
A stack structure of the inverter illustrated in
The driver transistor of
The gate electrode 22′ of the driver transistor is formed together with the bottom gate electrode 24′ of the load transistor, and the bottom gate electrode 24′ is covered by the first insulating layer 30′. Then, the first insulating layer 30′ is patterned to make a transistor having a desired configuration. Here, a proper contact hole is formed to electrically connect the single layer 44′ which will be the source electrode of the load transistor and the drain electrode of the driver transistor with the bottom gate electrode 24′ during deposition. The process of forming the contact hole for a top gate electrode 62′ of the load transistor is the same as that of
As such, when the top gate electrode 62′ is electrically and directly connected to the bottom gate electrode 24′, the load transistor requiring the depletion characteristic may simultaneously turn on or off a bottom gate organic semiconductor transistor and a top gate organic semiconductor transistor, and thus has twice more excellent depletion characteristics.
In order to form the structure described above, processes of forming a second insulating layer 50′ and the bottom gate electrode 62′ are further added to a conventional organic semiconductor process. However, these layers also function as passivation layers that have to be formed as an upper thin film in a stack structure of an organic semiconductor, and thus it can be noted that there is almost no additional process load caused by these layers.
According to details newly proposed by the present invention in an aspect of materials for manufacturing the structures of
And, the source and drain electrodes 42, 44, 46, 42′, 44′ and 46′ of the driver and load transistors may be formed of at least one of Au, platinum (Pt), nickel (Ni) and palladium (Pd), a conductive oxide layer such as ITO or IZO, or a conductive polymer layer such as PEDOT.
Also, in the case of
As described above, a structure of a D-inverter which has a simple manufacturing process, in particular, a stable structure of a D-inverter composed of an organic semiconductor transistor may be provided.
Also, the D-inverter composed of the organic semiconductor transistor has an excellent turn-on current characteristic, that is, an excellent depletion characteristic.
The D-inverter in which a depletion type transistor and an enhancement type transistor are connected to each other may be more easily embodied compared to a method using a conventional transistor size effect.
When a double gate structure is applied, the D-inverter may be embodied even with the same W/L, and thus a degree of integration may be improved, and both a second insulating layer and a top gate electrode function as a passivation layer, and thus life span and stability of the inverter device may increase.
While the present invention has been shown and described with reference to certain exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the appended claims.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US3903431||Dec 28, 1973||Sep 2, 1975||Teletype Corp||Clocked dynamic inverter|
|US3946245||Feb 12, 1975||Mar 23, 1976||Teletype Corporation||Fast-acting feedforward kicker circuit for use with two serially connected inverters|
|US4384220||Jan 29, 1981||May 17, 1983||Tokyo Shibaura Denki Kabushiki Kaisha||MOS Transistor circuit with a power-down function|
|US4417162||Sep 9, 1981||Nov 22, 1983||Bell Telephone Laboratories, Incorporated||Tri-state logic buffer circuit|
|US4714840||Dec 30, 1982||Dec 22, 1987||Thomson Components - Mostek Corporation||MOS transistor circuits having matched channel width and length dimensions|
|US5699007 *||Jan 11, 1996||Dec 16, 1997||Cascade Design Automation Corporation||High-speed solid state buffer circuit and method for producing the same|
|US5705413||Oct 8, 1996||Jan 6, 1998||U.S. Philips Corporation||Method of manufacturing an electronic device using thermally stable mask|
|US5744823||Oct 9, 1996||Apr 28, 1998||U.S. Philips Corporation||Electronic devices comprising thin-film circuitry|
|US5998103 *||Apr 6, 1998||Dec 7, 1999||Chartered Semiconductor Manufacturing, Ltd.||Adhesion promotion method employing glycol ether acetate as adhesion promoter material|
|US6462723 *||Jun 11, 1999||Oct 8, 2002||Semiconductor Energy Laboratory Co., Ltd.||Semiconductor device and method for manufacturing the same|
|US6683333 *||Jul 12, 2001||Jan 27, 2004||E Ink Corporation||Fabrication of electronic circuit elements using unpatterned semiconductor layers|
|US6852995||Nov 9, 2000||Feb 8, 2005||The University Of Liverpool||Field effect transistor (FET) and FET circuitry|
|US7030666||Feb 27, 2004||Apr 18, 2006||Motorola, Inc.||Organic semiconductor inverting circuit|
|US7122398||Mar 25, 2004||Oct 17, 2006||Nanosolar, Inc.||Manufacturing of optoelectronic devices|
|US20020139978 *||Apr 19, 2001||Oct 3, 2002||Shunpei Yamazaki||Semiconductor device and manufacturing method thereof|
|US20040119504||Dec 23, 2002||Jun 24, 2004||3M Innovative Properties Company||AC powered logic circuitry|
|US20040169176||Feb 28, 2003||Sep 2, 2004||Peterson Paul E.||Methods of forming thin film transistors and related systems|
|US20050260803||May 23, 2005||Nov 24, 2005||Marcus Halik||Thin film field effect transistor with gate dielectric made of organic material and method for fabricating the same|
|US20060033086||Oct 20, 2005||Feb 16, 2006||Gerlach Christopher P||Acene-thiophene semiconductors|
|US20060197092 *||Jun 22, 2005||Sep 7, 2006||Randy Hoffman||System and method for forming conductive material on a substrate|
|US20070272948 *||Mar 30, 2007||Nov 29, 2007||Koo Jae Bon||Inverter with dual-gate organic thin-film transistor|
|US20080135947 *||Oct 31, 2007||Jun 12, 2008||Koo Jae Bon||Organic inverter including surface-treated layer and method of manufacturing the same|
|US20080246095 *||Apr 6, 2007||Oct 9, 2008||Xerox Corporation||Ambipolar transistor design|
|JP2003273228A||Title not available|
|JP2005079549A||Title not available|
|JP2005166713A||Title not available|
|JP2006013108A||Title not available|
|JPH05152560A||Title not available|
|JPH06151307A||Title not available|
|KR19990073642A||Title not available|
|KR20020001169A||Title not available|
|KR20020096743A||Title not available|
|KR20040063325A||Title not available|
|KR20060070350A||Title not available|
|1||Annie Wang, et al; "Tunable threshold voltage and flatband voltage in pentacene field effect transistors", Applied Physics Letters 89, pp. 112109-1-112109-3, Sep. 12, 2006.|
|2||Gelinck, G.H. et al. "Dual-gate organic thin-film transistors." Applied Physics Letters 87, 073508 (2005). © 2005 American Institute of Physics.|
|3||Hagen Klauk, et al; "Fast Organic Thin-Film Transistor Circuits", IEEE Electron Device Letters, vol. 20, No. 6, pp. 289-291, Jun. 1999 (exact date not available).|
|4||Hagen Klauk, et al; "Flexible Organic Complementary Circuits", IEEE Transactions on Electron Devices, vol. 52, No. 4, pp. 618-622, Apr. 2005, (exact date not available).|
|5||Shingo Iba, et al; "Control of threshold voltage of organic field-effect transistors with double-gate structures", Applied Physics Letters 87, Jul. 8, 2005, pp. 023509-1-023509-3.|
|6||USPTO Office Action mailed Feb. 3, 2009 for Co-Pending U.S. Appl. No. 11/931,461.|
|7||USPTO Office Action mailed Feb. 4, 2009 for Co-Pending U.S. Appl. No. 11/693,830.|
|8||USPTO Office Action mailed Jun. 9, 2009 for Co-Pending U.S. Appl. No. 11/693,830.|
|9||USPTO Office Action mailed Mar. 30, 2009 for Co-Pending U.S. Appl. No. 11/931,461.|
|10||USPTO Office Action mailed Sep. 29, 2009 for Co-Pending U.S. Appl. No. 11/931,461.|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US8373443||May 26, 2011||Feb 12, 2013||Semiconductor Energy Laboratory Co., Ltd.||Logic circuit|
|US8502225||Aug 30, 2010||Aug 6, 2013||Semiconductor Energy Laboratory Co., Ltd.||Light-emitting device and method for manufacturing the same|
|US8744038||Sep 27, 2012||Jun 3, 2014||Semiconductor Energy Laboratory Co., Ltd.||Shift register circuit|
|US8916915 *||Nov 26, 2012||Dec 23, 2014||Lg Display Co., Ltd.||Thin film transistor substrate and method for manufacturing the same and organic light emitting device using the same|
|US8957411||Jul 25, 2013||Feb 17, 2015||Semiconductor Energy Laboratory Co., Ltd.||Light-emitting device and method for manufacturing the same|
|US9000431||Jan 5, 2012||Apr 7, 2015||Semiconductor Energy Laboratory Co., Ltd.||Semiconductor device|
|US9029851||Nov 22, 2011||May 12, 2015||Semiconductor Energy Laboratory Co., Ltd.||Semiconductor device comprising an oxide semiconductor layer|
|US9083334||Feb 7, 2013||Jul 14, 2015||Semiconductor Energy Laboratory Co., Ltd.||Logic circuit|
|US9178048 *||Nov 18, 2014||Nov 3, 2015||Lg Display Co., Ltd.||Thin film transistor substrate and method for manufacturing the same and organic light emitting device using the same|
|US9219158||Apr 2, 2015||Dec 22, 2015||Semiconductor Energy Laboratory Co., Ltd.||Semiconductor device|
|US9318512||Apr 23, 2015||Apr 19, 2016||Semiconductor Energy Laboratory Co., Ltd.||Method for manufacturing semiconductor device|
|US9324874||Sep 28, 2009||Apr 26, 2016||Semiconductor Energy Laboratory Co., Ltd.||Display device comprising an oxide semiconductor|
|US9431465||Jan 6, 2015||Aug 30, 2016||Semiconductor Energy Laboratory Co., Ltd.||Light-emitting device and method for manufacturing the same|
|US9472559||Dec 22, 2010||Oct 18, 2016||Semiconductor Energy Laboratory Co., Ltd.||Memory device and semiconductor device|
|US9548133||Jun 2, 2014||Jan 17, 2017||Semiconductor Energy Laboratory Co., Ltd.||Shift register circuit|
|US20110221475 *||May 26, 2011||Sep 15, 2011||Semiconductor Energy Laboratory Co., Ltd.||Logic circuit|
|US20140042395 *||Nov 26, 2012||Feb 13, 2014||Lg Display Co., Ltd.||Thin Film Transistor Substrate and Method for Manufacturing the Same and Organic Light Emitting Device Using the Same|
|US20150072483 *||Nov 18, 2014||Mar 12, 2015||Lg Display Co., Ltd.||Thin Film Transistor Substrate and Method for Manufacturing the Same and Organic Light Emitting Device Using the Same|
|EP2768141A1||Feb 15, 2013||Aug 20, 2014||Technische Universität Darmstadt||Active loads, especially for use in inverter circuits|
|U.S. Classification||257/59, 257/348, 257/E29.29|
|Cooperative Classification||H01L27/283, H01L27/281|
|European Classification||H01L27/28D, H01L27/28B|
|Aug 6, 2007||AS||Assignment|
Owner name: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTIT
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KOO, JAE BON;KIM, SEONG HYUN;SUH, KYUNG SOO;AND OTHERS;REEL/FRAME:019648/0975;SIGNING DATES FROM 20070721 TO 20070725
Owner name: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTIT
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KOO, JAE BON;KIM, SEONG HYUN;SUH, KYUNG SOO;AND OTHERS;SIGNING DATES FROM 20070721 TO 20070725;REEL/FRAME:019648/0975
|Nov 8, 2013||REMI||Maintenance fee reminder mailed|
|Mar 30, 2014||LAPS||Lapse for failure to pay maintenance fees|
|May 20, 2014||FP||Expired due to failure to pay maintenance fee|
Effective date: 20140330