|Publication number||US7732010 B2|
|Application number||US 11/406,136|
|Publication date||Jun 8, 2010|
|Filing date||Apr 18, 2006|
|Priority date||May 9, 2003|
|Also published as||CN1551326A, CN100385640C, EP1475460A1, US20040221959, US20060185795|
|Publication number||11406136, 406136, US 7732010 B2, US 7732010B2, US-B2-7732010, US7732010 B2, US7732010B2|
|Inventors||Soo Young Choi, Beom Soo Park, Quanyuan Shang, Robert I. Greene, John M. White, Dong-Kil Yim, Chung-Hee Park, Kam Law|
|Original Assignee||Applied Materials, Inc.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (87), Non-Patent Citations (22), Classifications (26), Legal Events (2)|
|External Links: USPTO, USPTO Assignment, Espacenet|
This application is a continuation of U.S. patent application Ser. No. 10/435,182, filed May 9, 2003 now abandoned.
1. Field of the Invention
Embodiments of the invention generally provide a substrate support utilized in semiconductor processing and a method of fabricating the same.
2. Description of the Background Art
Liquid crystal displays or flat panels are commonly used for active matrix displays such as computer and television monitors, personal digital assistants (PDAs), cell phones and the like. Generally, flat panels comprise two glass plates having a layer of liquid crystal material sandwiched therebetween. At least one of the glass plates includes at least one conductive film disposed thereon that is coupled to a power supply. Power supplied to the conductive film from the power supply changes the orientation of the crystal material, creating a pattern such as text or graphics seen on the display. One fabrication process frequently used to produce flat panels is plasma enhanced chemical vapor deposition (PECVD).
Plasma enhanced chemical vapor deposition is generally employed to deposit thin films on a substrate such as a flat panel or semiconductor wafer. Plasma enhanced chemical vapor deposition is generally accomplished by introducing a precursor gas into a vacuum chamber that contains a substrate. The precursor gas is typically directed through a distribution plate situated near the top of the chamber. The precursor gas in the chamber is energized (e.g., excited) into a plasma by applying RF power to the chamber from one or more RF sources coupled to the chamber. The excited gas reacts to form a layer of material on a surface of the substrate that is positioned on a temperature controlled substrate support. In applications where the substrate receives a layer of low temperature polysilicon, the substrate support may be heated in excess of 400 degrees Celsius. Volatile by-products produced during the reaction are pumped from the chamber through an exhaust system.
Generally, large area substrates utilized for flat panel fabrication are large, often exceeding 550 mm×650 mm, and are envisioned up to and beyond 4 square meters in surface area. Correspondingly, the substrate supports utilized to process large area substrates are proportionately large to accommodate the large surface area of the substrate. The substrate supports for high temperature use typically are casted, encapsulating one or more heating elements and thermocouples in an aluminum body. Due to the size of the substrate support, one or more reinforcing members are generally disposed within the substrate support to improve the substrate support's stiffness and performance at elevated operating temperatures (i.e., in excess of 350 degrees Celsius and approaching 500 degrees Celsius to minimize hydrogen content in some films). The aluminum substrate support is then anodized to provide a protective coating.
Although substrate supports configured in this manner have demonstrated good processing performance, small local variations in film thickness, often manifesting as spots of thinner film thickness, have been observed which may be detrimental to the next generation of devices formed on large area substrates. It is believed that variation is glass thickness and flatness, along with a smooth substrate support surface, typically about 50 micro-inches, creates a local capacitance variation in certain locations across the glass substrate, thereby creating local plasma non-uniformities that results on deposition variation, e.g., spots of thin deposited film thickness.
Aging and modifying plasma conditioning of the substrate support has shown to mitigate thin spot formation, particularly when performed in conjunction with an extended chamber vacuum purge before transferring a substrate into the chamber for processing. However, the resultant expenditures of time and materials required by this method and its unfavorable effect on cost and throughput make obtaining a more effective solution desirable.
As the size of next generation of substrates continues to grow, the importance of defect reduction becomes increasingly important due to the substantial investment by the flat panel manufacturer represented by each substrate. Moreover, with the continual evolution of device critical dimension reduction demanding closer tolerances for film uniformity, the reduction and/or elimination of film thickness variation becomes an important factor for the economic production of the next generation devices formed on large area substrates.
Therefore, there is a need for an improved substrate support.
A substrate support and method for fabricating the same are provided. In one embodiment of the invention, a substrate support includes an electrically conductive body having a substrate support surface that is covered by an electrically insulative coating. At least a portion of the coating centered on the substrate support surface has a surface finish of between about 80 to about 200 micro-inches. In another embodiment, a substrate support includes an anodized aluminum body having a surface finish on the portion of the body adapted to support a substrate thereon of between about 80 to about 200 micro-inches.
In another embodiment, a substrate support is fabricated by a process including the steps of providing an aluminum body suitable for supporting a large area substrate on a substrate support surface, and forming an anodized coating having a surface roughness of between about 80 to about 200 micro-inches on the substrate support surface.
A more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof that are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures.
The invention generally provides a large area substrate support and methods for fabricating the same. The invention is illustratively described below in reference to a plasma enhanced chemical vapor deposition system, such as a plasma enhanced chemical vapor deposition (PECVD) system, available from AKT, a division of Applied Materials, Inc., Santa Clara, Calif. However, it should be understood that the invention has utility in other system configurations such as physical vapor deposition systems, ion implant systems, etch systems, other chemical vapor deposition systems and any other system in which processing a substrate on a substrate support is desired.
The lid assembly 110 is supported by the walls 106 and can be removed to service the chamber 102. The lid assembly 110 is generally comprised of aluminum. A distribution plate 118 is coupled to an interior side 120 of the lid assembly 110. The distribution plate 118 is typically fabricated from aluminum. The center section includes a perforated area through which process and other gases supplied from the gas source 104 are delivered to the process volume 112. The perforated area of the distribution plate 118 is configured to provide uniform distribution of gases passing through the distribution plate 118 into the chamber 102.
A heated substrate support assembly 138 is centrally disposed within the chamber 102. The support assembly 138 supports the large area glass substrate 140 (herein after “substrate 140”) during processing. The substrate support assembly 138 generally includes an electrically conductive body 124 that is covered with an electrically insulative coating 180 over at least the portion of the body 124 that supports the substrate 140. The coating 180 has a surface finish of about 80 to about 200 micro-inches that has been demonstrated to improve deposition uniformity without expensive aging or plasma treatment of the support assembly 138. The coating 180 may also cover other portions of the body 124. It is believed that the rougher surface offsets the effect of glass substrate thickness variation to provide a more uniform capacitance across the substrate, thereby enhancing plasma and deposition uniformity, and substantially eliminating the formation of thin spots in the deposited film.
The conductive body 124 may be fabricated from metals or other comparably electrically conductive materials. The coating 180 may be a dielectric material such as oxides, silicon nitride, silicon dioxide, aluminum dioxide, tantalum pentoxide, silicon carbide, polyimide, among others, which may be applied by various deposition or coating processes, including but not limited to, flame spraying, plasma spraying, high energy coating, chemical vapor deposition, spraying, adhesive film, sputtering and encapsulating.
In one embodiment, the substrate support assembly 138 includes an aluminum conductive body 124 that encapsulates at least one embedded heating element 132 and a thermocouple. At least a first reinforcing member 116 is generally embedded in the body 124 proximate the heating element 132. A second reinforcing member 166 may be disposed within the body 124 on the side of the heating element 132 opposite the first reinforcing member 116. The reinforcing members 116 and 166 may be comprised of metal, ceramic or other stiffening materials. In one embodiment, the reinforcing members 116 and 166 are comprised of aluminum oxide fibers. Alternatively, the reinforcing members 116 and 166 may be comprised of aluminum oxide fibers combined with aluminum oxide particles, silicon carbide fibers, silicon oxide fibers or similar materials. The reinforcing members 116 and 166 may include loose material or may be a pre-fabricated shape such as a plate. Alternatively, the reinforcing members 116 and 166 may comprise other shapes and geometry. Generally, the reinforcing members 116 and 166 have some porosity that allows aluminum to impregnate the members 116, 166 during a casting process described below.
The heating element 132, such as an electrode disposed in the support assembly 138, is coupled to a power source 130 and controllably heats the support assembly 138 and substrate 140 positioned thereon to a predetermined temperature. Typically, the heating element 132 maintains the substrate 140 at an uniform temperature of about 150 to at least about 460 degrees Celsius.
Generally, the support assembly 138 has a lower side 126 and an upper side 134 that supports the substrate. The lower side 126 has a stem cover 144 coupled thereto. The stem cover 144 generally is an aluminum ring coupled to the support assembly 138 that provides a mounting surface for the attachment of a stem 142 thereto.
Generally, the stem 142 extends from the stem cover 144 and couples the support assembly 138 to a lift system (not shown) that moves the support assembly 138 between an elevated position (as shown) and a lowered position. A bellows 146 provides a vacuum seal between the process volume 112 and the atmosphere outside the chamber 102 while facilitating the movement of the support assembly 138. The stem 142 additionally provides a conduit for electrical and thermocouple leads between the support assembly 138 and other components of the system 100.
The support assembly 138 generally is grounded such that RF power supplied by a power source 122 to the distribution plate 118 (or other electrode positioned within or near the lid assembly of the chamber) may excite the gases disposed in the process volume 112 between the support assembly 138 and the distribution plate 118. The RF power from the power source 122 is generally selected commensurate with the size of the substrate to drive the chemical vapor deposition process.
The support assembly 138 additionally supports a circumscribing shadow frame 148. Generally, the shadow frame 148 prevents deposition at the edge of the substrate 140 and support assembly 138 so that the substrate does not stick to the support assembly 138.
The support assembly 138 has a plurality of holes 128 disposed therethrough that accept a plurality of lift pins 150. The lift pins 150 are typically comprised of ceramic or anodized aluminum. Generally, the lift pins 150 have first ends 160 that are substantially flush with or slightly recessed from an upper side 134 of the support assembly 138 when the lift pins 150 are in a normal position (i.e., retracted relative to the support assembly 138). The first ends 160 are generally flared to prevent the lift pins 150 from falling through the holes 128. Additionally, the lift pins 150 have a second end 164 that extends beyond the lower side 126 of the support assembly 138. The lift pins 150 may be actuated relative to the support assembly 138 by a lift plate 154 to project from the upper side 134, thereby placing the substrate in a spaced-apart relation to the support assembly 138.
The lift plate 154 is disposed proximate the lower side 126 of the support surface. The lift plate 154 is connected to the actuator by a collar 156 that circumscribes a portion of the stem 142. The bellows 146 includes an upper portion 168 and a lower portion 170 that allow the stem 142 and collar 156 to move independently while maintaining the isolation of the process volume 112 from the environment outside the chamber 102. Generally, the lift plate 154 is actuated to cause the lift pins 150 to extend from the upper side 134 as the support assembly 138 and the lift plate 154 move closer together relative to one another.
The body 202 generally includes a substrate support surface 204 and an opposing mounting surface 206. The mounting surface 206 is coupled to the stem 142 (seen in
The coating 210 includes an outer surface 212 and an inner surface 214. The inner surface 214 is generally disposed directly on the body 202. In one embodiment, the anodized coating has a thickness of between about 0.3 to about 2.16 mils. Anodized coatings having a thickness falling outside of this range tend to either fail during temperature cycling or do not sufficiently reduce spotting in SiN, αSi and n+α-Si large area films formed by PECVD deposition.
A portion 218 of the outer surface 212 positioned above the substrate support surface 204 has a geometry configured to support the substrate 140 thereon. The portion 218 of the outer surface 212 has a surface finish 216 of a predefined roughness that promotes uniform thickness of films deposited on the substrate 140. The surface finish 216 has a roughness of about 80 to about 200 micro-inches. The surface finish 216 advantageously results in improved film thickness uniformity and particularly has been found to substantially eliminate local thickness non-uniformity (spots of thin deposition) without conditioning (e.g., aging) the substrate support. The elimination of substrate support conditioning conserves both time and materials normally consumed in a plasma aging process and eliminates vacuum purges between cycles, the elimination of which results in improved system throughput. In one embodiment, the surface finish 216 has a roughness of about 130 micro-inches.
The surface finish 216 of the anodized coating 210 may be achieved by treating at least a portion 220 of the outer substrate support surface 204 underlying the substrate 140 and/or by treating at least the anodized coating 210 that supports the substrate 140 (to obtain a pre-defined surface finish 208). The surface finish 208 of the substrate support surface 204 may be formed in a number of manners, including bead blasting, abrasive blasting, grinding, embossing, sanding, texturing, etching or other method for providing a pre-defined surface roughness. In one embodiment, the surface finish 208 of the support surface 204 of the body 202 is about 88 to about 230 micro-inches. In another embodiment, the surface finish 208 is about 145 micro-inches.
Optionally, a strip 224 of the support surface 204 bounding the portion 220 positioned out from under the substrate 140 may be left untreated to minimize the fabrication costs. This results in a strip 222 of the anodized coating 210 above the untreated strip 224 that may have a finish different than the finish 216, but as the strip 222 is beyond the substrate 140, the surface finish of the strip 222 has no effect on film deposition uniformity. In one embodiment, the strip 222 of the anodized coating 210 has a smoother surface finish than the portion 218 of the coating 210 it bounds.
In one embodiment, the substrate support surface 204 is bead blasted to a pre-determined surface finish. Bead blasting may include impacting the body 202 with a ceramic or oxide bead.
In another embodiment, the bead is aluminum oxide, having an average diameter of about 125 to about 375 micron. The beads are provided through a nozzle having an exit velocity sufficient to produce a surface finish 208 of about 88 to about 230 micro-inches.
After the completion of the preparing step 302, the body is anodized at step 304. The anodizing step 304 generally includes applying an anodized layer having a thickness between about 0.3 to about 2.16 mils. The resultant surface finish 216 on the outer surface 212 of the anodized coating 212 is about 80 to about 200 micro-inches, and in one embodiment is about 130 micro-inches.
The treating step 404 may include bead blasting, abrasive blasting, grinding, embossing, sanding, texturing, etching or other method for providing a pre-defined surface roughness. In one embodiment, the treating step 404 results in a surface finish of the outer surface of about between about 80 to about 200 micro-inches.
An upper portion 508 of the anodized coating 506 that supports the substrate 140 has a surface finish 510 configured to enhance uniform deposition of films on the substrate 140. In one embodiment, the surface finish 510 has a roughness between about 80 to about 200 micro-inches. The surface finish 510 may be created through a number of methods, including the methods described above.
A clamp plate 608 is coupled to the body 602 by a plurality of fasteners 610 (one of which is shown in
A portion 620 of the anodized coating 606 that supports the substrate 140 has a surface finish 622 configured to enhance uniform deposition of films on the substrate 140. The surface finish 622 may be created similar to that described above.
Thus, a support assembly that enhances uniform deposition of films disposed on a large area substrate is provided. At least a portion of an anodized coating covering the aluminum body of the support assembly which supports the substrate is textured to a pre-determined surface roughness that enhances deposition uniformity, thereby substantially eliminating time-consuming aging of the support assembly and its associated costs.
Although several preferred embodiments which incorporate the teachings of the present invention have been shown and described in detail, those skilled in the art can readily devise many other varied embodiments that still incorporate these teachings.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US3019522||Jun 23, 1958||Feb 6, 1962||John M Bluth||Reformation of metallic surfaces|
|US3616310||Mar 10, 1969||Oct 26, 1971||Kaiser Aluminium Chem Corp||Aluminum-anodizing process|
|US4606796||May 20, 1985||Aug 19, 1986||Asahi Malleable Iron Co., Ltd.||Colored, anodized aluminum-base article and method of preparing same|
|US4801785||Jan 14, 1986||Jan 31, 1989||Raychem Corporation||Electrical devices|
|US4862799||Dec 9, 1988||Sep 5, 1989||Rockwell International Corporation||Copper coated anodized aluminum ink metering roller|
|US4974369||Jun 28, 1990||Dec 4, 1990||William Dixon||Two-dimensionally grooved sanding pad|
|US5104514||May 16, 1991||Apr 14, 1992||The United States Of America As Represented By The Secretary Of The Navy||Protective coating system for aluminum|
|US5200157 *||Mar 14, 1991||Apr 6, 1993||Toshiba Ceramics Co., Ltd.||Susceptor for vapor-growth deposition|
|US5290424||Jan 31, 1992||Mar 1, 1994||Aluminum Company Of America||Method of making a shaped reflective aluminum strip, doubly-protected with oxide and fluoropolymer coatings|
|US5314601||Jun 25, 1992||May 24, 1994||Eltech Systems Corporation||Electrodes of improved service life|
|US5366585||Jan 28, 1993||Nov 22, 1994||Applied Materials, Inc.||Method and apparatus for protection of conductive surfaces in a plasma processing reactor|
|US5384682 *||Mar 22, 1993||Jan 24, 1995||Toto Ltd.||Electrostatic chuck|
|US5401573||Nov 30, 1992||Mar 28, 1995||Mcdonnell Douglas Corporation||Protection of thermal control coatings from ultraviolet radiation|
|US5565058||Nov 8, 1994||Oct 15, 1996||Applied Materials, Inc.||Lid and door for a vacuum chamber and pretreatment therefor|
|US5581874 *||Mar 27, 1995||Dec 10, 1996||Tokyo Electron Limited||Method of forming a bonding portion|
|US5675471||Jun 7, 1995||Oct 7, 1997||International Business Machines Corporation||Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity|
|US5677253 *||Feb 13, 1996||Oct 14, 1997||Kyocera Corporation||Wafer holding member|
|US5756222||Aug 15, 1994||May 26, 1998||Applied Materials, Inc.||Corrosion-resistant aluminum article for semiconductor processing equipment|
|US5804253||Jul 12, 1996||Sep 8, 1998||Kanegafuchi Chemical Ind. Co., Ltd.||Method for adhering or sealing|
|US5811195||Jul 10, 1995||Sep 22, 1998||Applied Materials, Inc.||Corrosion-resistant aluminum article for semiconductor processing equipment|
|US5844205 *||Apr 19, 1996||Dec 1, 1998||Applied Komatsu Technology, Inc.||Heated substrate support structure|
|US5856236||Jun 14, 1996||Jan 5, 1999||Micron Technology, Inc.||Method of depositing a smooth conformal aluminum film on a refractory metal nitride layer|
|US5858464||Feb 13, 1997||Jan 12, 1999||Applied Materials, Inc.||Methods and apparatus for minimizing excess aluminum accumulation in CVD chambers|
|US5916454||Aug 30, 1996||Jun 29, 1999||Lam Research Corporation||Methods and apparatus for reducing byproduct particle generation in a plasma processing chamber|
|US6007673||Oct 1, 1997||Dec 28, 1999||Matsushita Electronics Corporation||Apparatus and method of producing an electronic device|
|US6024044 *||Oct 9, 1997||Feb 15, 2000||Applied Komatsu Technology, Inc.||Dual frequency excitation of plasma for film deposition|
|US6055927||Jan 14, 1997||May 2, 2000||Applied Komatsu Technology, Inc.||Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology|
|US6063203 *||Jun 2, 1998||May 16, 2000||Asm Japan K.K.||Susceptor for plasma CVD equipment and process for producing the same|
|US6064031||Mar 20, 1998||May 16, 2000||Mcdonnell Douglas Corporation||Selective metal matrix composite reinforcement by laser deposition|
|US6117772||Jul 10, 1998||Sep 12, 2000||Ball Semiconductor, Inc.||Method and apparatus for blanket aluminum CVD on spherical integrated circuits|
|US6159301 *||Dec 17, 1998||Dec 12, 2000||Asm Japan K.K.||Substrate holding apparatus for processing semiconductor|
|US6159618||May 29, 1998||Dec 12, 2000||Commissariat A L'energie Atomique||Multi-layer material with an anti-erosion, anti-abrasion, and anti-wear coating on a substrate made of aluminum, magnesium or their alloys|
|US6196001||Oct 12, 1999||Mar 6, 2001||Alliedsignal Inc.||Environment controlled WIP cart|
|US6343784||Sep 21, 1999||Feb 5, 2002||Commissariat A L'energie Atomique||Device allowing the treatment of a substrate in a machine provided for the treatment of bigger substrates and a system of mounting a substrate in this device|
|US6355554||Jan 13, 2000||Mar 12, 2002||Samsung Electronics Co., Ltd.||Methods of forming filled interconnections in microelectronic devices|
|US6368880||Feb 14, 2001||Apr 9, 2002||Applied Materials, Inc.||Barrier applications for aluminum planarization|
|US6423175||Oct 6, 1999||Jul 23, 2002||Taiwan Semiconductor Manufacturing Co., Ltd||Apparatus and method for reducing particle contamination in an etcher|
|US6458683||Mar 30, 2001||Oct 1, 2002||Taiwan Semiconductor Manufacturing Co., Ltd||Method for forming aluminum bumps by CVD and wet etch|
|US6458684||Feb 3, 2000||Oct 1, 2002||Applied Materials, Inc.||Single step process for blanket-selective CVD aluminum deposition|
|US6471879||Sep 21, 2001||Oct 29, 2002||Micron Technology, Inc.||Buffer layer in flat panel display|
|US6510888 *||Aug 1, 2001||Jan 28, 2003||Applied Materials, Inc.||Substrate support and method of fabricating the same|
|US6537905||Dec 30, 1996||Mar 25, 2003||Applied Materials, Inc.||Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug|
|US6554907||Jan 2, 2001||Apr 29, 2003||Applied Materials, Inc.||Susceptor with internal support|
|US6565984||May 28, 2002||May 20, 2003||Applied Materials Inc.||Clean aluminum alloy for semiconductor processing equipment|
|US6592707||Oct 22, 2001||Jul 15, 2003||Applied Materials Inc.||Corrosion-resistant protective coating for an apparatus and method for processing a substrate|
|US6649031||Oct 8, 1999||Nov 18, 2003||Hybrid Power Generation Systems, Llc||Corrosion resistant coated fuel cell bipolar plate with filled-in fine scale porosities and method of making the same|
|US6649039||Dec 29, 2001||Nov 18, 2003||Hon Hai Precision Ind. Co., Ltd.||Process of surface treating aluminum articles|
|US6659331||Feb 26, 2002||Dec 9, 2003||Applied Materials, Inc||Plasma-resistant, welded aluminum structures for use in semiconductor apparatus|
|US6672917||Mar 1, 2002||Jan 6, 2004||Honda Giken Kogyo Kabushiki Kaisha||Process for improving an anodizing film, an anodizing film structure and an aluminum-alloy-made outboard engine|
|US6713188||Jan 27, 2003||Mar 30, 2004||Applied Materials, Inc||Clean aluminum alloy for semiconductor processing equipment|
|US6775873||Dec 11, 2000||Aug 17, 2004||Eugene H. Luoma||Apparatus for removing hair from a drain|
|US6776873||Feb 14, 2002||Aug 17, 2004||Jennifer Y Sun||Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers|
|US6841049 *||Feb 4, 2000||Jan 11, 2005||Ricoh Company, Ltd.||Optical device substrate film-formation apparatus, optical disk substrate film-formation method, substrate holder manufacture method, substrate holder, optical disk and a phase-change recording type of optical disk|
|US20020012022||Oct 9, 1998||Jan 31, 2002||Werner Fassler||Cleaning and repairing fluid for printhead cleaning|
|US20020063108||Dec 22, 2000||May 30, 2002||Wang Jian Ping||Methods for producing thin film magnetic devices having increased orientation ratio|
|US20020148941||Jan 16, 2001||Oct 17, 2002||Boris Sorokov||Sputtering method and apparatus for depositing a coating onto substrate|
|US20020176219 *||Feb 27, 2002||Nov 28, 2002||Katsushi Sakaue||Electrostatic chuck|
|US20030010446||Apr 14, 2000||Jan 16, 2003||Morio Kajiyama||Method of manufacturing a processing apparatus|
|US20030047464||Jul 27, 2001||Mar 13, 2003||Applied Materials, Inc.||Electrochemically roughened aluminum semiconductor processing apparatus surfaces|
|US20030150530||Feb 8, 2002||Aug 14, 2003||Applied Materials, Inc.||Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus|
|US20030205479||May 3, 2002||Nov 6, 2003||Yixing Lin||Halogen-resistant, anodized aluminium for use in semiconductor processing apparatus|
|US20040129574||Jan 6, 2003||Jul 8, 2004||Sheila Farrokhalaee Kia||Color finishing method|
|US20040221959||May 9, 2003||Nov 11, 2004||Applied Materials, Inc.||Anodized substrate support|
|US20050037193||Jul 22, 2004||Feb 17, 2005||Sun Jennifer Y.||Clean, dense yttrium oxide coating protecting semiconductor processing apparatus|
|US20060032586||Jul 15, 2005||Feb 16, 2006||Applied Materials, Inc.||Reducing electrostatic charge by roughening the susceptor|
|US20060159940||Jan 18, 2005||Jul 20, 2006||Applied Materials, Inc.||Corrosion-resistant aluminum component having multi-layer coating|
|US20060185795||Apr 18, 2006||Aug 24, 2006||Applied Materials, Inc.||Anodized substrate support|
|EP0803900A2||Mar 26, 1997||Oct 29, 1997||Applied Materials, Inc.||Surface preparation to enhance the adhesion of a dielectric layer|
|EP1193751B1||Apr 6, 2000||May 17, 2006||Tokyo Electron Limited||Electrode and method of manufacturing an electrode|
|JP2001117079A||Title not available|
|JP2001298013A||Title not available|
|JP2002252276A||Title not available|
|JPH0483328A||Title not available|
|JPH03146672A||Title not available|
|JPH05163597A||Title not available|
|JPH07326655A||Title not available|
|JPH09323234A||Title not available|
|JPH10340896A||Title not available|
|JPH11354620A *||Title not available|
|KR20010105389A||Title not available|
|KR20030012050A||Title not available|
|KR20040032489A||Title not available|
|SU1797027A1||Title not available|
|TW541639B||Title not available|
|WO2000060658A1||Apr 6, 2000||Oct 12, 2000||Tokyo Electron Limited||Electrode, wafer stage, plasma device, method of manufacturing electrode and wafer stage|
|WO2001071784A1||Mar 17, 2000||Sep 27, 2001||Hitachi, Ltd.||Method of manufacturing semiconductor and manufacturing apparatus|
|WO2002075790A2||Feb 4, 2002||Sep 26, 2002||Tokyo Electron Limited||Method and apparatus for transferring heat from a substrate to a chuck|
|1||"Abrasive Grit Sizes" by Russ Rowlett, Obtained from http://www.unc.edu/-rowlett/units/scales/grit.html on Apr. 30, 2005.|
|2||Chinese Third Office Action dated Apr. 27, 2007 for Chinese Application No. 200410034739.0.|
|3||Definition of "Corundum (emery)", Obtained from Hawley's Condensed Chemical Dictionary, 14th ed. At http://www.knovel.com on Apr. 30, 2005.|
|4||European Office Action dated Feb. 15, 2007 for European Application No. 04011066.0-2119.|
|5||European Office Action dated Jul. 25, 2008 for European Application No. 04011066.0-2119.|
|6||European Office Action dated Nov. 21, 2007 for European Application No. 04011066.0-2119.|
|7||European Search Report dated Aug. 27, 2004 for European Application No. 04011066.0-2119.|
|8||European Search Report for EP 04011066, dated Sep. 3, 2004.|
|9||First Office Action dated Nov. 20, 2009 for Chinese Patent Application No. 200610098582.7.|
|10||First Office Action for Application No. 200410034739.0; Issued Aug. 11, 2006; People's Republic of China.|
|11||Japanese Notice of Reasons for Rejection dated Jun. 17, 2008 for Japanese Application No. 2004-140365.|
|12||Japanese Office Action, Patent Application No. 2004-140365, dated Feb. 24, 2009.|
|13||Korean Office Action dated Dec. 27, 2005 for Korean Application No. 200432489.|
|14||Korean Office Action dated Jul. 23, 2007 for Korean Application No. 20060070677.|
|15||Korean Office Action dated Nov. 10, 2006 for Korean Application No. 20060070677.|
|16||Lowenheim, Frederick, Modern Electroplating, Chapter 30, "Anodizing", pp. 632-641, 1942.|
|17||Search Report dated Aug. 11, 2009 for Taiwan Patent Application No. 95122556.|
|18||Second Office Action for Application No. 200410034739.0; Issued Jan. 12, 2007; People's Republic of China.|
|19||Summary of Office Action dated Aug. 17, 2009 for Taiwan Patent Application No. 95122556.|
|20||Taiwan Office Action dated Apr. 9, 2008 for Taiwan Application No. 093112801 with Taiwanese Search Report.|
|21||Taiwan Office Action dated Jul. 21, 2008 for Taiwan Application No. 95122556 with Taiwanese Search Report.|
|22||Taiwan Office Action dated Nov. 28, 2008 for Taiwan Application No. 093112801.|
|U.S. Classification||427/248.1, 118/728, 427/578, 156/391, 156/345.51, 118/723.00R|
|International Classification||C23C16/458, C25D11/18, H01L21/205, H01L21/68, C23C16/00, H01J37/32, B24C1/00, C25D11/16, H01L21/683, C25D11/04|
|Cooperative Classification||C25D11/18, C25D11/16, C23C16/4581, C25D11/04, H01J37/32082|
|European Classification||H01J37/32M8, C25D11/16, C23C16/458B, C25D11/04, C25D11/18|
|Apr 18, 2006||AS||Assignment|
Owner name: APPLIED MATERIALS, INC., CALIFORNIA
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHOI, SOO YOUNG;PARK, BEOM SOO;SHANG, QUANYUAN;AND OTHERS;REEL/FRAME:017802/0459;SIGNING DATES FROM 20030403 TO 20030429
Owner name: APPLIED MATERIALS, INC.,CALIFORNIA
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHOI, SOO YOUNG;PARK, BEOM SOO;SHANG, QUANYUAN;AND OTHERS;SIGNING DATES FROM 20030403 TO 20030429;REEL/FRAME:017802/0459
|Nov 26, 2013||FPAY||Fee payment|
Year of fee payment: 4